TWI776104B - Substrate processing apparatus and method using the same - Google Patents

Substrate processing apparatus and method using the same Download PDF

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TWI776104B
TWI776104B TW108144374A TW108144374A TWI776104B TW I776104 B TWI776104 B TW I776104B TW 108144374 A TW108144374 A TW 108144374A TW 108144374 A TW108144374 A TW 108144374A TW I776104 B TWI776104 B TW I776104B
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substrate
gas
cleaning
substrate support
substrate processing
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TW108144374A
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TW202044452A (en
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崔大俊
李寅宰
金泰學
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南韓商圓益Ｉｐｓ股份有限公司
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67259—Position monitoring, e.g. misposition detection or presence detection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67276—Production flow monitoring, e.g. for increasing throughput
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks

Abstract

本發明涉及基板處理裝置及利用該裝置的基板處理方法，詳言之，涉及利用電漿在基板表面執行基板處理的基板處理裝置及利用該裝置的基板處理方法。本發明揭露一種基板處理裝置，包括：製程腔室(100)、氣體噴射部(200)及基板支撐部(300)，所述製程腔室(100)形成密封的處理空間(S)，所述氣體噴射部(200)設置在所述製程腔室(100)上側並噴射用於基板處理的製程氣體及用於清掃所述製程腔室(100)內部的腔室清掃氣體(CCG)，所述基板支撐部(300)設置在所述製程腔室(100)並安裝有一個以上的基板(10)。 The present invention relates to a substrate processing apparatus and a substrate processing method using the same, and more particularly, to a substrate processing apparatus for performing substrate processing on a substrate surface using plasma and a substrate processing method using the same. The invention discloses a substrate processing apparatus, comprising: a process chamber (100), a gas injection part (200) and a substrate support part (300), the process chamber (100) forms a sealed processing space (S), the A gas injection part (200) is arranged on the upper side of the process chamber (100) and injects process gas for substrate processing and a chamber cleaning gas (CCG) for cleaning the interior of the process chamber (100), the The substrate support part (300) is arranged in the process chamber (100) and is mounted with one or more substrates (10).

Description

基板處理裝置及利用該裝置的基板處理方法 Substrate processing apparatus and substrate processing method using the same

本發明涉及基板處理裝置及利用該裝置的基板處理方法，詳言之，涉及利用電漿在基板表面執行基板處理的基板處理裝置及利用該裝置的基板處理方法。 The present invention relates to a substrate processing apparatus and a substrate processing method using the same, and more particularly, to a substrate processing apparatus for performing substrate processing on a substrate surface using plasma and a substrate processing method using the same.

基板處理裝置包括形成密封的內部空間的真空腔室和設置在所述真空腔室內並安裝有基板的基板支撐部，是一種在內部空間注入處理氣體的同時施加電源來蝕刻或者沉積基板表面的裝置。 The substrate processing apparatus includes a vacuum chamber that forms a sealed inner space and a substrate support part that is arranged in the vacuum chamber and has a substrate mounted thereon. It is a device for etching or depositing the surface of a substrate while injecting a processing gas into the inner space and applying a power source. .

由所述基板處理裝置處理的基板有半導體用晶片、LCD面板用玻璃基板、太陽能電池用基板等。 The substrates processed by the substrate processing apparatus include wafers for semiconductors, glass substrates for LCD panels, substrates for solar cells, and the like.

但是，因為在基板處理過程中在基板上面沉積的薄膜層數增加以及向基板施加高熱，按照基板上面的區域施加的壓力可有不同，結果可能出現安裝在基板支撐部的安裝面的基板邊緣位置向上側抬起的翹曲(warpage)現象。 However, due to the increase in the number of thin film layers deposited on the substrate during substrate processing and the application of high heat to the substrate, the pressure applied may vary according to the area on the substrate, and as a result, the edge position of the substrate on the mounting surface of the substrate support may occur The phenomenon of warpage that lifts upward.

因為基板在基板支撐部向上翹曲，導致在電漿製程中在基板與基板支撐部之間形成的空間出現電弧(Arc)，降低了薄膜厚度的均勻度(THK uniformity)，因此出現降低基板品質及生產力的問題。 Because the substrate is warped upward at the substrate support part, arcing (Arc) occurs in the space formed between the substrate and the substrate support part during the plasma process, which reduces the film thickness uniformity (THK uniformity), thus reducing the quality of the substrate. and productivity issues.

即使在累積的基板上面執行基板處理，也使用靜電夾盤利用靜電力夾住已安裝的基板來防止基板的翹曲現象，但是若使用靜電夾盤，則在基板未安裝在靜電夾盤時(諸如，交換基板時)可能因為殘留於真空腔室內部的氣體而在靜電夾盤的安裝面形成薄膜，據此弱化對於基板的夾持力，存在無法避免基板翹曲現象的問題。 Even if substrate processing is performed on top of the accumulated substrates, the mounted substrate is clamped by electrostatic force to prevent the warpage of the substrate, but if the electrostatic chuck is used, when the substrate is not mounted on the electrostatic chuck ( For example, when exchanging substrates), a thin film may be formed on the mounting surface of the electrostatic chuck due to the gas remaining in the vacuum chamber, thereby weakening the clamping force for the substrate, and there is a problem that the substrate warpage cannot be avoided.

為了解決如上所述的問題，本發明的目的在於提供一種基板處理裝置及利用該裝置的基板處理方法，以對利用靜電力夾持基板的基板支撐部的上面執行清掃，進而可防止因為形成在基板支撐部上面的薄膜而降低夾持力導致基板翹曲。 In order to solve the above-mentioned problems, an object of the present invention is to provide a substrate processing apparatus and a substrate processing method using the same, which can perform cleaning on the upper surface of a substrate support portion holding a substrate by electrostatic force, thereby preventing The film on the upper surface of the substrate support reduces the clamping force and causes the substrate to warp.

本發明是為了達到如上所述的本發明的目的而提出的，本發明揭露一種基板處理裝置，包括：一製程腔室，形成密封的一處理空間；一氣體噴射部，設置在所述製程腔室上側並噴射用於基板處理的一製程氣體及用於清掃所述製程腔室內部的一腔室清掃氣體；以及一基板支撐部，設置在所述製程腔室並且安裝有一個以上的基板，其中，所述基板支撐部包括：一基座部，在上面安裝所述基板；複數個凸出部，形成為凸出在所述基座部上面來支撐所述基板；一氣體流道部，貫通所述基座部，以與所述基座部上面和被所述複數個凸出部支撐的基板之間的空間連通；以及一表面清掃氣體供應部，連接於所述氣體流道部，以用於通過所述氣體流道部供應所述表面清掃氣體，以使所述表面清掃氣體流動於所述複數個凸出部之間，其中，所述基板處理裝置包括一控制部，所述控制部進行控制以在一主清掃製程之間通過所述氣體流道部供應所述表面清掃氣體，所述主清掃製程是利用所述腔室清掃氣體清掃所述製程腔室內部。 The present invention is proposed to achieve the purpose of the present invention as described above. The present invention discloses a substrate processing apparatus, comprising: a process chamber forming a sealed processing space; and a gas injection part disposed in the process chamber the upper side of the chamber and spray a process gas for substrate processing and a chamber cleaning gas for cleaning the interior of the process chamber; and a substrate support part, disposed in the process chamber and mounted with more than one substrate, Wherein, the substrate supporting part includes: a base part on which the substrate is mounted; a plurality of protruding parts formed to protrude on the base part to support the substrate; a gas flow channel part, passing through the base part to communicate with the space between the upper surface of the base part and the base plate supported by the plurality of protruding parts; and a surface cleaning gas supply part connected to the gas flow channel part, for supplying the surface cleaning gas through the gas flow channel part, so that the surface cleaning gas flows between the plurality of protruding parts, wherein the substrate processing apparatus includes a control part, the The control part controls to supply the surface cleaning gas through the gas flow channel part between a main cleaning process, wherein the main cleaning process uses the chamber cleaning gas to clean the inside of the process chamber.

所述基板支撐部可以是在所述基座部安裝電極以通過靜電力夾持所述基板的一靜電夾盤。 The substrate support portion may be an electrostatic chuck that mounts electrodes on the base portion to clamp the substrate by electrostatic force.

所述基板支撐部還可包括：一凹槽，形成在所述基座部上面，以通過所述基座部的上面與被所述凸出部支撐的所述基板之間的空間擴散通過所述氣體流道部供應的所述吹掃氣體及所述表面清掃氣體的中的至少一種氣體。 The substrate supporting part may further include: a groove formed on the upper surface of the base part to diffuse through the base part through a space between the upper surface of the base part and the substrate supported by the protruding part. at least one of the purge gas and the surface cleaning gas supplied from the gas flow channel portion.

所述基板支撐部還可包括一壩部，所述壩部沿著所述基座部的上面邊緣周圍形成相同或者高於所述凸出部的高度。 The substrate support portion may further include a dam portion formed along the periphery of the upper surface of the base portion with a height equal to or higher than that of the protruding portion.

在所述基座部的上面可形成有與所述氣體流道部連通的複數個氣孔，所述氣體流道部從所述基板支撐部內部分支，以分別與所述複數個氣孔連通。 A plurality of air holes communicating with the gas flow channel portion may be formed on the upper surface of the base portion, and the gas flow channel portion is branched from the inside of the substrate support portion to communicate with the plurality of air holes, respectively.

所述基板支撐部還可包括一吹掃氣體供應部，所述吹掃氣體供應部連接於所述氣體流道部，用於通過所述氣體流道部供應所述吹掃氣體，以使所述吹掃氣體流動於所述複數個凸出部之間，所述控制部進行控制，以在所述基板處理製程中通過所述氣體流道部持續供應所述吹掃氣體。 The substrate support part may further include a purge gas supply part, the purge gas supply part is connected to the gas flow channel part, and is used for supplying the purge gas through the gas flow channel part, so that the The purging gas flows between the plurality of protruding parts, and the control part controls to continuously supply the purging gas through the gas flow channel part during the substrate processing process.

所述基板處理裝置還可包括一翹曲感應部，用於感應被所述基板支撐部夾持的所述基板的翹曲程度。 The substrate processing apparatus may further include a warpage sensing portion for sensing the warpage degree of the substrate clamped by the substrate support portion.

所述控制部可進行控制，在所述翹曲程度於已設定的基準以上的情況下，通過所述氣體流道部供應所述表面清掃氣體。 The control unit may control the surface cleaning gas to be supplied through the gas flow channel when the degree of warpage is greater than or equal to a predetermined reference.

在另一方面，本發明揭露一種基板處理方法，由所述基板處理裝置執行，所述基板處理裝置包括：一製程腔室，形成密封的一處理空間；一氣體噴射部，設置在所述製程腔室上側並噴射用於基板處理的一製程氣體及用於清掃所述製程腔室內部的一腔室清掃氣體；以及一基板支撐部，設置在所述製程腔室並且安裝有一個以上的基板。 In another aspect, the present invention discloses a substrate processing method performed by the substrate processing apparatus, the substrate processing apparatus comprising: a process chamber forming a sealed processing space; a gas injection part disposed in the process the upper side of the chamber and spray a process gas for substrate processing and a chamber cleaning gas for cleaning the interior of the process chamber; and a substrate support part, disposed in the process chamber and mounted with more than one substrate .

所述基板處理方法可包括：一主清掃步驟，在多次執行所述基板處理之後，間隔地反復執行，以通過所述氣體噴射部供應所述腔室清掃氣體以清掃所述製程腔室的整個內部；一基板支撐部清掃步驟，通過所述基板支撐部向所述基板支撐部與被所述基板支撐部支撐的基板之間的空間供應所述表面清掃氣體以清掃所述基板支撐部。 The substrate processing method may include: a main cleaning step, which is repeatedly performed at intervals after the substrate processing is performed a plurality of times, so as to supply the chamber cleaning gas through the gas injection part to clean the process chamber. The entire interior; a substrate support part cleaning step, supplying the surface cleaning gas to the space between the substrate support part and the substrate supported by the substrate support part through the substrate support part to clean the substrate support part.

所述基板支撐部清掃步驟可在所述主清掃步驟之間執行或者與所述主清掃步驟一同執行。 The substrate support portion cleaning step may be performed between the main cleaning steps or together with the main cleaning step.

所述基板支撐部清掃步驟可在導入所述製程腔室被所述基板支撐部夾持的基板的翹曲程度在提前設定的基準以上的情況下執行。 The substrate support portion cleaning step may be performed when the degree of warpage of the substrate introduced into the process chamber and held by the substrate support portion is equal to or greater than a predetermined reference.

所述基板支撐部清掃步驟可包括：一虛擬基板導入步驟，向所述製程腔室導入一虛擬基板；一虛擬基板夾持步驟，在所述基板支撐部夾持所述虛擬基板；以及一清掃氣體供應步驟，向所述基板支撐部上面與所述虛擬基板之間的空間供應所述表面清掃氣體。 The cleaning step of the substrate support part may include: a dummy substrate introduction step of introducing a dummy substrate into the process chamber; a dummy substrate clamping step of clamping the dummy substrate on the substrate support part; and a cleaning In the gas supply step, the surface cleaning gas is supplied to the space between the upper surface of the substrate support portion and the dummy substrate.

所述清掃氣體供應步驟可將惰性的所述吹掃氣體和所述表面清掃氣體一同供應到所述基板支撐部的上面與所述虛擬基板之間的空間。 The purge gas supply step may supply the inert purge gas together with the surface purge gas to the space between the upper surface of the substrate support and the dummy substrate.

本發明的基板處理裝置及利用該裝置的基板處理方法對利用靜電力夾持基板的基板支撐部上面執行清掃，進而具有可防止因為形成在基板支撐部上面的薄膜而降低夾持力導致基板翹曲的優點。 The substrate processing apparatus and the substrate processing method using the apparatus of the present invention perform cleaning on the upper surface of the substrate supporting portion that clamps the substrate by electrostatic force, thereby preventing the substrate from warping due to the reduction of the clamping force due to the thin film formed on the upper surface of the substrate supporting portion. The advantages of the song.

更詳細地說，本發明通過形成在基板支撐部內部的氣體流道部向基板支撐部的上面與基板之間供應表面清掃氣體，進而可有效去除在基板支撐部上面沉積的薄膜，因此具有將基板支撐部對基板的夾持力保持在預定水準以上的優點。 In more detail, the present invention can effectively remove the thin film deposited on the substrate support by supplying the surface cleaning gas between the upper surface of the substrate support and the substrate through the gas flow channel formed inside the substrate support. There is an advantage that the clamping force of the substrate support portion to the substrate is maintained at a predetermined level or higher.

另外，本發明在製程腔室的主清掃步驟之間還執行對基板支撐部表面的基板支撐部清掃步驟，進而可將執行主清掃步驟的清掃週期最大限度地利用，因此具有可提高基板處理裝置的產量的優點。 In addition, the present invention also performs the cleaning step of the substrate supporting portion on the surface of the substrate supporting portion between the main cleaning steps of the process chamber, so that the cleaning period for performing the main cleaning step can be utilized to the maximum extent, so the substrate processing apparatus can be improved. yield advantage.

另外，本發明可將氣體流道部及氣孔直接靈活利用於表面清掃氣體的供應，所述氣體流道部及氣孔通過基板支撐部將吹掃氣體供應於基板支撐部的上面與基板之間，以防止在基板處理時在基板底面執行基板處理，因此具有無需改變現有的設備即可得到對基板支撐部的清掃效果的優點。 In addition, the present invention can directly and flexibly utilize the gas flow channel portion and the air hole for the supply of the surface cleaning gas, and the gas flow channel portion and the air hole supply the cleaning gas between the upper surface of the substrate support portion and the substrate through the substrate support portion, In order to prevent the substrate processing from being performed on the bottom surface of the substrate during substrate processing, there is an advantage that the cleaning effect of the substrate support portion can be obtained without changing the existing equipment.

100‧‧‧製程腔室 100‧‧‧Processing chamber

110‧‧‧腔室主體 110‧‧‧Chamber body

111‧‧‧閘門 111‧‧‧Gate

120‧‧‧上部蓋 120‧‧‧Top cover

200‧‧‧氣體噴射部 200‧‧‧Gas injection part

300‧‧‧基板支撐部 300‧‧‧Substrate support

310‧‧‧基座部 310‧‧‧Pedestal

312‧‧‧氣孔 312‧‧‧Stomata

320‧‧‧凸出部 320‧‧‧Projection

330‧‧‧氣體流道部 330‧‧‧Gas runner

340‧‧‧凹槽 340‧‧‧grooves

340a‧‧‧周邊凹槽 340a‧‧‧Circumferential groove

340b‧‧‧第二中心凹槽 340b‧‧‧Second center groove

340c‧‧‧第一中心凹槽 340c‧‧‧First center groove

340d‧‧‧第一連接凹槽 340d‧‧‧First connecting groove

340e‧‧‧第二連接凹槽 340e‧‧‧Second connection groove

350‧‧‧壩部 350‧‧‧ Dam Department

10‧‧‧基板 10‧‧‧Substrate

H‧‧‧深度 H‧‧‧depth

S‧‧‧處理空間 S‧‧‧processing space

CCG‧‧‧腔室清掃氣體 CCG‧‧‧Chamber purge gas

PG‧‧‧吹掃氣體 PG‧‧‧Purge gas

SCG‧‧‧表面清掃氣體 SCG‧‧‧surface cleaning gas

D1‧‧‧第一直徑 D 1 ‧‧‧First diameter

D2‧‧‧第二直徑 D 2 ‧‧‧Second diameter

S1‧‧‧第一間距 S 1 ‧‧‧First pitch

S2‧‧‧第二間距 S 2 ‧‧‧Second spacing

W‧‧‧寬度 W‧‧‧Width

圖1是顯示本發明一實施例之基板處理裝置的平面剖面圖； FIG. 1 is a plan cross-sectional view showing a substrate processing apparatus according to an embodiment of the present invention;

圖2是放大顯示圖1之基板處理裝置的基板支撐部的平面圖； 2 is an enlarged plan view showing a substrate support portion of the substrate processing apparatus of FIG. 1;

圖3是圖2之A-A方向的剖面圖； Fig. 3 is the sectional view of the A-A direction of Fig. 2;

圖4是放大顯示圖3之一部分的剖面放大圖； FIG. 4 is an enlarged cross-sectional view showing a portion of FIG. 3 in an enlarged manner;

圖5是顯示在圖1的基板支撐部上面與基板之間流動的吹掃氣體的流量的曲線圖； 5 is a graph showing the flow rate of purge gas flowing between the upper surface of the substrate support portion of FIG. 1 and the substrate;

圖6是顯示在反復的基板處理過程中執行的主清掃及基板支撐部清掃的週期及所需時間的曲線圖； 6 is a graph showing the cycle and required time of main cleaning and substrate support cleaning performed during repeated substrate processing;

圖7是顯示在圖3的基板支撐部中沿基板支撐部上面與基板之間的空間流動的吹掃氣體和表面清掃氣體的流動示意圖； 7 is a schematic diagram showing the flow of purge gas and surface cleaning gas flowing along the space between the upper surface of the substrate support portion and the substrate in the substrate support portion of FIG. 3;

圖8是顯示本發明一實施例之基板處理裝置執行基板處理方法的流程圖；以及 FIG. 8 is a flowchart illustrating a substrate processing method performed by a substrate processing apparatus according to an embodiment of the present invention; and

圖9是說明在圖8的基板處理方法中用以清掃基板支撐部的基板支撐部清掃步驟的流程圖。 FIG. 9 is a flowchart illustrating a cleaning procedure of the substrate support portion for cleaning the substrate support portion in the substrate processing method of FIG. 8 .

以下，參照附圖說明本發明的基板處理裝置。 Hereinafter, the substrate processing apparatus of the present invention will be described with reference to the accompanying drawings.

如圖1至圖6所示，本發明的基板處理裝置可包括：形成密封的處理空間S的製程腔室100；設置在製程腔室100上側以噴射用於基板處理的氣體的氣體噴射部200；設置在製程腔室100並安裝有一個以上的基板10的基板支撐部300。 As shown in FIGS. 1 to 6 , the substrate processing apparatus of the present invention may include: a process chamber 100 forming a sealed processing space S; a gas injection part 200 disposed on the upper side of the process chamber 100 to inject gas for substrate processing ; Disposed in the process chamber 100 and mounted with more than one substrate 10 of the substrate support portion 300 .

在本文中，基板10可以是任何一種基板，只要作為基板處理物件的基板10是需要執行沉積、蝕刻等製程，諸如半導體用晶片、顯示器面板用玻璃基板、太陽能電池用基板等。 Herein, the substrate 10 may be any substrate, as long as the substrate 10 as a substrate processing object needs to perform processes such as deposition, etching, etc., such as wafers for semiconductors, glass substrates for display panels, substrates for solar cells, and the like.

所述基板處理裝置可執行沉積、蝕刻等各種基板處理製程；例如，可以是諸如CVD、ALD等的沉積裝置，執行利用電漿在基板10上形成膜等的沉積製程。 The substrate processing apparatus can perform various substrate processing processes such as deposition and etching; for example, it can be a deposition apparatus such as CVD, ALD, etc., which performs deposition processes such as film formation on the substrate 10 using plasma.

所述製程腔室100為具有用於形成密封的內部空間以進行基板處理的結構，根據基板處理製程可具有各種結構，如圖1所示，可包括腔室主體110及上部蓋120結構，其中所述腔室主體110是上側開口並且形成有一個以上的閘門，所述上部蓋120與腔室主體110相互可拆卸地結合以形成處理空間S。 The process chamber 100 has a structure for forming a sealed inner space for substrate processing, and may have various structures according to the substrate processing process. As shown in FIG. 1 , it may include a chamber body 110 and an upper cover 120 structure, wherein The chamber main body 110 is open on the upper side and is formed with one or more shutters, and the upper cover 120 and the chamber main body 110 are detachably combined with each other to form the processing space S.

此時，所述製程腔室100的腔室主體110及上部蓋120中的至少一個可電接地。 At this time, at least one of the chamber body 110 and the upper cover 120 of the process chamber 100 may be electrically grounded.

在所述腔室主體110的一側面可形成供基板10出入的閘門111。 A shutter 111 for the substrate 10 to enter and exit may be formed on one side of the chamber main body 110 .

在所述製程腔室100可設置用於執行真空處理製程的裝置，諸如氣體噴射部200及基板支撐部300、排氣系統等，所述氣體噴射部200從氣體供應裝置(未顯示)接收處理氣體向處理空間S噴射，基板支撐部300安裝基板10，所述排氣系統用於調節處理空間S內的壓力及排氣。 The process chamber 100 may be provided with means for performing a vacuum processing process, such as a gas injection part 200 and a substrate support part 300, an exhaust system, etc., the gas injection part 200 receiving processing from a gas supply (not shown) The gas is injected into the processing space S, and the substrate 10 is mounted on the substrate support portion 300 , and the exhaust system is used to adjust the pressure and exhaust gas in the processing space S.

所述氣體噴射部200是設置在處理空間S的上側並且噴射用於執行基板處理的氣體的結構，根據噴射的氣體的種類、次數等可具有各種結構。 The gas injection part 200 is provided on the upper side of the processing space S and injects gas for performing substrate processing, and may have various structures depending on the type, number of times, and the like of the gas to be injected.

舉一示例，所述氣體噴射部200可噴射用於基板處理的製程氣體和用於清掃製程腔室100內部的腔室清掃氣體CCG。 For example, the gas injection part 200 may inject process gas for substrate processing and chamber cleaning gas CCG for cleaning the inside of the process chamber 100 .

另一方面，所述氣體噴射部200設置在上部蓋120，並通過絕緣體121與上部蓋120絕緣，可施加RF電源。此時，後述的基板支撐部300可接地。 On the other hand, the gas injection part 200 is provided on the upper cover 120, and is insulated from the upper cover 120 by the insulator 121, so that RF power can be applied. At this time, the substrate support portion 300 described later may be grounded.

相反地，雖然未顯示，但所述氣體噴射部200可與上部蓋120一同電性接地，此時後述的基板支撐部300在與製程腔室100絕緣的狀態下可施加一個或者兩個RF電源。 On the contrary, although not shown, the gas injection part 200 can be electrically grounded together with the upper cover 120 , and the substrate support part 300 described later can apply one or two RF power sources in a state of being insulated from the process chamber 100 . .

所述基板支撐部300的結構用以安裝並支撐一個以上的基板10，可具有各種結構。 The structure of the substrate support portion 300 is used to mount and support one or more substrates 10 , and may have various structures.

在一實施例中，所述基板支撐部300可包括：基座部310，在上面安裝基板10；複數個凸出部320，在基座部310上面形成為凸出以支撐基板10；氣體流道部330，形成為貫通基座部310，以與基座部310上面和被複數個凸出部320支撐的基板10之間的空間連通；表面清掃氣體供應部，連接於氣體流道部330，用於通過氣體流道部330供應表面清掃氣體SCG，以使表面清掃氣體SCG流動於複數個凸出部320之間。 In one embodiment, the substrate supporting part 300 may include: a base part 310 on which the substrate 10 is mounted; a plurality of protruding parts 320 formed to protrude on the base part 310 to support the substrate 10; a gas flow The channel portion 330 is formed to penetrate the base portion 310 to communicate with the space between the upper surface of the base portion 310 and the substrate 10 supported by the plurality of protruding portions 320 ; the surface cleaning gas supply portion is connected to the gas flow channel portion 330 , for supplying the surface cleaning gas SCG through the gas flow channel part 330 , so that the surface cleaning gas SCG flows between the plurality of protruding parts 320 .

所述基座部310是用以在上面安裝基板10的結構，可具有各種結構。 The base portion 310 is a structure for mounting the substrate 10 thereon, and may have various structures.

此時，所述基座部310內可安裝加熱器，以製程溫度加熱安裝的基板10，其中所述製程溫度取決於基板處理種類。 At this time, a heater may be installed in the base portion 310 to heat the mounted substrate 10 at a process temperature, wherein the process temperature depends on the type of substrate treatment.

在所述基座部310下側可結合軸部，所述軸部貫通製程腔室100的腔室壁並與基板上下驅動部(未顯示)結合進行上下移動。 A shaft portion may be coupled to the lower side of the base portion 310 , the shaft portion penetrates through the chamber wall of the process chamber 100 and is combined with a substrate up and down driving portion (not shown) to move up and down.

此時，所述基座部310能夠以軸部為中心進行旋轉。 At this time, the base portion 310 can be rotated around the shaft portion.

另外，在所述基座部310可上下移動地設置一個以上的升降銷(圖中未顯示)，所述一個以上的升降銷用於上下移動基板10，進而可導入或者排出基板10。 In addition, one or more lift pins (not shown in the figure) are provided on the base portion 310 to move up and down, and the one or more lift pins are used to move the substrate 10 up and down so as to introduce or discharge the substrate 10 .

所述複數個凸出部320是形成為凸出在基座部310上面以支撐基板10的結構，可具有各種結構。 The plurality of protruding portions 320 are formed to protrude above the base portion 310 to support the substrate 10 , and may have various structures.

例如，所述基板支撐部300可由通過靜電力夾持基板10的靜電夾盤(ESC)構成。 For example, the substrate support portion 300 may be constituted by an electrostatic chuck (ESC) that clamps the substrate 10 by electrostatic force.

此時，在所述基座部310內可安裝電極，用於通過靜電力夾持基板10，以夾持安裝在上面的基板10。 At this time, electrodes can be installed in the base portion 310 for clamping the substrate 10 by electrostatic force, so as to clamp the substrate 10 mounted thereon.

所述電極是吸附電極，以通過靜電力將基板10吸附並保持在基座部310上面，可具有各種結構。 The electrode is a suction electrode to suction and hold the substrate 10 on the base portion 310 by electrostatic force, and may have various structures.

此時，所述基座部310由陶瓷燒結體形成，可設置在製程腔室100的內部空間，以通過靜電力夾持並保持基板10。 At this time, the base portion 310 is formed of a ceramic sintered body, and can be disposed in the inner space of the process chamber 100 to clamp and hold the substrate 10 by electrostatic force.

此時，所述複數個凸出部320為陶瓷材料，可通過各種方法形成，舉例說明，可通過對基座部310上面噴塗電漿等塗敷陶瓷而成。 At this time, the plurality of protruding portions 320 are made of ceramic material, and can be formed by various methods. For example, the base portion 310 can be formed by spraying the top of the base portion 310 with ceramics such as spraying plasma.

所述複數個凸出部320形成在基座部310上面來支撐基板10，具有各種凸出圖案，並且可形成間隔提前設定的間距。 The plurality of protruding parts 320 are formed on the base part 310 to support the substrate 10 , have various protruding patterns, and can form pitches set in advance.

由所述複數個凸出部320支撐的基板10通過凸出圖案可在基板10的底面與基座部310上面之間形成可使氣體流動的空間。 The substrate 10 supported by the plurality of protruding parts 320 can form a space for gas flow between the bottom surface of the substrate 10 and the upper surface of the base part 310 through the protruding pattern.

更詳細地說，如圖2所示，所述複數個凸出部320可包括複數個第一壓花及複數個第二壓花；所述複數個第一壓花是在基座部310上面以具有第一直徑D1的圓筒形狀間隔第一間距S1地形成中心區域的凸出圖案，以可在基座部310的中心區域支撐基板10；所述複數個第二壓花在基座部310上面配置成圍繞複數個第一壓花的形狀，並且形成具有第二直徑D2的圓筒形狀以間隔第二間距S2，以可在基座部310的周邊區域支撐基板10。 In more detail, as shown in FIG. 2 , the plurality of protruding portions 320 may include a plurality of first embossings and a plurality of second embossings; the plurality of first embossings are on the base portion 310 A protruding pattern in a central area is formed in a cylindrical shape having a first diameter D1 at intervals of a first pitch S1 so as to support the substrate 10 in the central area of the base portion 310; the plurality of second embossings are formed on the base portion 310. The upper surface of the seat portion 310 is configured to surround a plurality of first embossings, and is formed into a cylindrical shape having a second diameter D 2 to be spaced by a second pitch S 2 so as to support the substrate 10 in the peripheral region of the base portion 310 .

此時，所述第二壓花比第一壓花形成得更加緊密，可使複數個第二壓花三維間距寬度小於複數個第一壓花的間距寬度；第一壓花的第一直徑D1和第二壓花的第二直徑D2形成相同的尺寸，而第二壓花的第二間距S2可小於第一壓花的第一間距。 At this time, the second embossing is formed more closely than the first embossing, so that the three-dimensional spacing width of the second embossing can be smaller than the spacing width of the first embossing; the first diameter D of the first embossing 1 and the second diameter D 2 of the second embossing form the same size, while the second spacing S 2 of the second embossing may be smaller than the first spacing of the first embossing.

更詳細地說，所述複數個第一壓花在基座部310上面的中心區域具有19mm至20mm的第一間距S1，可配置成三角形或者網格形狀。 In more detail, the central area of the plurality of first embossings on the base portion 310 has a first spacing S 1 of 19 mm to 20 mm, and may be arranged in a triangular or grid shape.

另外，所述第二壓花以基座部310的中心為基準形成放射狀，並以5度左右的第二間距S2等角配置，可配置成圍繞複數個第一壓花的環形狀。 Moreover, the said 2nd embossing is radially formed with the center of the base part 310 as a reference, and is arrange|positioned equiangularly at the 2nd pitch S2 of about 5 degrees, and can arrange|position in the ring shape surrounding a some 1st embossing.

另外，根據通過本發明的另一實施例，為使所述第二壓花比第一壓花形成得更加緊密，可使複數個第二壓花的間距寬度小於複數個第一壓花的間距寬度，第一壓花的第一間距S1和第二壓花的第二間距S2可形成相同的間距，並且第一壓花的第一直徑D1也可小於第二壓花的第二直徑D2。 In addition, according to another embodiment of the present invention, in order to form the second embossing more closely than the first embossing, the pitch width of the plurality of second embossings can be made smaller than the pitch of the plurality of first embossings The width, the first spacing S1 of the first embossing and the second spacing S2 of the second embossing can form the same spacing, and the first diameter D1 of the first embossing can also be smaller than the second Diameter D 2 .

更詳細地說，所述第一壓花形成第一直徑D1為2.5mm至2.6mm的圓筒形狀，第二壓花可形成第二直徑D2為2.95mm至3.05mm的圓筒形狀。 據此，相比於比複數個第一壓花，以更加緊密的間距配置複數個第二壓花可形成周邊區域。 In more detail, the first embossing forms a cylindrical shape with a first diameter D 1 of 2.5 mm to 2.6 mm, and the second embossing can form a cylindrical shape with a second diameter D 2 of 2.95 mm to 3.05 mm. Accordingly, the peripheral region can be formed by arranging a plurality of second embossings at a tighter pitch than a plurality of first embossings.

此時，較佳為，第一壓花及第二壓花和基板10底面的接觸面可以是基板10整體面積的20%至24%，以有效縮小基座部310上面和基板10底面的接觸面積，進而可防止顆粒等的污染物或者製程氣體的殘留物污染基板10底面。 At this time, preferably, the contact surface between the first embossing and the second embossing and the bottom surface of the substrate 10 may be 20% to 24% of the overall area of the substrate 10, so as to effectively reduce the contact between the top surface of the base portion 310 and the bottom surface of the substrate 10 Therefore, the bottom surface of the substrate 10 can be prevented from contamination by contaminants such as particles or residues of process gases.

所述氣體流道部330是貫通基座部310以形成與基座部310上面和被凸出部320支撐的基板10之間的空間連通的流道，可具有各種結構。 The gas flow channel portion 330 is a flow channel that penetrates through the base portion 310 to form a flow channel that communicates with the space between the upper surface of the base portion 310 and the substrate 10 supported by the protruding portion 320 , and may have various structures.

此時，在所述基座部310上面可形成與氣體流道部330連通的一個以上的氣孔312。 At this time, one or more air holes 312 communicating with the gas flow channel portion 330 may be formed on the upper surface of the base portion 310 .

此時，所述氣孔312可形成在不與凸出部320重疊的區域，較佳地形成在基座部310的中心區域。 At this time, the air hole 312 may be formed in a region that does not overlap with the protruding portion 320 , and is preferably formed in a central region of the base portion 310 .

另一方面，若在所述基座部310上面形成複數個氣孔312，則所述氣體流道部330可具有從基板支撐部300內部分支的分支結構，或者與各個氣孔312相對應的相互獨立的流道結構，以分別與複數個氣孔312連通。 On the other hand, if a plurality of air holes 312 are formed on the base portion 310 , the gas flow channel portion 330 may have a branch structure branched from the inside of the substrate support portion 300 , or the air holes 312 may be independent of each other corresponding to each other. The flow channel structure is connected with the plurality of air holes 312 respectively.

所述表面清掃氣體供應部是連接於氣體流道部330，以通過氣體流道部330供應表面清掃氣體SCG，使表面清掃氣體SCG流動於複數個凸出部320之間的結構，可具有各種結構。 The surface cleaning gas supply part is connected to the gas flow channel part 330 to supply the surface cleaning gas SCG through the gas flow channel part 330 so that the surface cleaning gas SCG flows between the plurality of protruding parts 320 , and can have various structures. structure.

通過所述表面清掃氣體供應部供應到氣體流道部330的表面清掃氣體SCG通過氣孔312可從基座部310的上面噴射，從氣孔312噴射的表面清掃氣體SCG通過複數個凸出部320之間可擴散於基座部310上面與基板10底面之間。 The surface cleaning gas SCG supplied to the gas flow passage portion 330 through the surface cleaning gas supply portion can be sprayed from the upper surface of the base portion 310 through the air holes 312 , and the surface cleaning gas SCG sprayed from the air holes 312 passes through the plurality of protrusions 320 . The space can be spread between the top surface of the base portion 310 and the bottom surface of the substrate 10 .

如圖7所示，在基座部310上面與基板10底面之間擴散的表面清掃氣體SCG可通過基板10的邊緣向外側排放。 As shown in FIG. 7 , the surface cleaning gas SCG diffused between the upper surface of the base portion 310 and the bottom surface of the substrate 10 may be discharged to the outside through the edge of the substrate 10 .

據此，由通過氣孔312噴射的表面清掃氣體SCG有效地去除基座部310上面的沉積物，因此可達到對基板支撐部300的清掃。 Accordingly, the deposits on the base portion 310 are effectively removed by the surface cleaning gas SCG sprayed through the air holes 312 , so that the substrate support portion 300 can be cleaned.

此時，所述基板支撐部300還可包括吹掃氣體供應部，所述吹掃氣體供應部連接於氣體流道部330，通過氣體流道部330供應吹掃氣體PG，以使吹掃氣體PG流動於複數個凸出部320之間。 At this time, the substrate support part 300 may further include a purge gas supply part, the purge gas supply part is connected to the gas flow channel part 330, and the purge gas PG is supplied through the gas flow channel part 330, so that the purge gas PG flows between the plurality of protrusions 320 .

通過所述吹掃氣體供應部供應到氣體流道部330的吹掃氣體PG可通過氣孔312從基座部310上面噴射，從氣孔312噴射的吹掃氣體PG通過複數個凸出部320之間可擴散在基座部310上面與基板10底面之間。 The purging gas PG supplied to the gas flow channel part 330 through the purging gas supply part can be sprayed from the upper surface of the base part 310 through the air hole 312 , and the purging gas PG sprayed from the air hole 312 can pass between the plurality of protruding parts 320 It can be diffused between the top surface of the base portion 310 and the bottom surface of the substrate 10 .

如圖7所示，在基座部310上面與基板10底面之間擴散的吹掃氣體PG可通過基板10的邊緣排放到外側。 As shown in FIG. 7 , the purge gas PG diffused between the upper surface of the base portion 310 and the bottom surface of the substrate 10 may be discharged to the outside through the edge of the substrate 10 .

據此，通過氣孔312噴射的吹掃氣體PG可防止製程氣體流入基座部310上面與基板10底面之間，可防止殘留製程氣體流入基座部310上面與基板10底面之間產生顆粒。 Accordingly, the purge gas PG sprayed through the air holes 312 can prevent the process gas from flowing between the upper surface of the susceptor 310 and the bottom surface of the substrate 10 , and can prevent the residual process gas from flowing into the space between the upper surface of the susceptor 310 and the bottom surface of the substrate 10 to generate particles.

據此，可防止顆粒附著於基板10底面而污染基板10，或者基座部310夾持基板10的靜電力降低。 Accordingly, it is possible to prevent particles from adhering to the bottom surface of the substrate 10 to contaminate the substrate 10 , or to reduce the electrostatic force of the base portion 310 sandwiching the substrate 10 .

另一方面，從氣孔312噴射的吹掃氣體PG及表面清掃氣體SCG彼此相同，不僅如此當然也可實現通過分別不同的氣孔312噴射的示例。 On the other hand, the purge gas PG and the surface cleaning gas SCG injected from the air holes 312 are the same as each other, and as a matter of course, an example of injecting through different air holes 312 can be realized.

另外，表面清掃氣體SCG可在與惰性載氣混合的狀態下供應，若從一個氣孔312一同噴射吹掃氣體PG和表面清掃氣體SCG，則吹掃氣體PG可產生表面清掃氣體SCG的載氣的功能。 In addition, the surface cleaning gas SCG can be supplied in a state of being mixed with an inert carrier gas, and if the cleaning gas PG and the surface cleaning gas SCG are injected together from one air hole 312, the cleaning gas PG can generate the carrier gas of the surface cleaning gas SCG. Function.

另一方面，為了控制通過所述氣孔312供應吹掃氣體PG或者表面清掃氣體SCG，所述基板支撐部300還可包括吹掃氣體閥門和表面清掃氣體閥門，所述吹掃氣體閥門設置在氣體流道部330與吹掃氣體供應部之間，所述表面清掃氣體閥門設置在氣體流道部330與表面清掃氣體供應部之間。 On the other hand, in order to control the supply of the purging gas PG or the surface cleaning gas SCG through the air hole 312, the substrate supporting part 300 may further include a purging gas valve and a surface cleaning gas valve, the purging gas valve is provided in the gas Between the flow channel portion 330 and the purge gas supply portion, the surface cleaning gas valve is disposed between the gas flow channel portion 330 and the surface cleaning gas supply portion.

此時，所述基板處理裝置還可包括控制部，所述控制部控制通過氣體流道部330供應表面清掃氣體SCG。 At this time, the substrate processing apparatus may further include a control part that controls the supply of the surface cleaning gas SCG through the gas flow channel part 330 .

所述控制部當然也可控制通過氣體流道部330一同供應表面清掃氣體SCG和吹掃氣體PG。 Of course, the control unit may also control the supply of the surface cleaning gas SCG and the purging gas PG together through the gas flow channel unit 330 .

舉一示例，所述控制部控制吹掃氣體閥門及表面清掃氣體閥門的開關動作，可控制通過氣孔312噴射的吹掃氣體PG及表面清掃氣體SCG的供應。 For example, the control unit controls the opening and closing actions of the purge gas valve and the surface cleaning gas valve, and can control the supply of the purge gas PG and the surface cleaning gas SCG injected through the air hole 312 .

更詳細地說，所述控制部可在利用所述腔室清掃氣體CCG清掃所述製程腔室100內部的主清掃製程之間，控制通過所述氣體流道部330供應所述表面清掃氣體SCG。 More specifically, the control unit may control the supply of the surface cleaning gas SCG through the gas flow channel 330 between the main cleaning process in which the chamber cleaning gas CCG is used to clean the inside of the process chamber 100 . .

為了通過所述控制部控制吹掃氣體PG及表面清掃氣體SCG的供應，所述基板處理裝置還可包括翹曲感應部，用於感應被基板支撐部300夾持的基板10的翹曲(warpage)程度。 In order to control the supply of the purge gas PG and the surface cleaning gas SCG through the control unit, the substrate processing apparatus may further include a warpage sensing unit for sensing warpage of the substrate 10 held by the substrate support unit 300 . )degree.

所述翹曲感應部作為用於感應被基板支撐部300夾持的基板10的翹曲(warpage)程度的感測器，可具有各種結構。 The warpage sensing portion may have various structures as a sensor for sensing the degree of warpage of the substrate 10 held by the substrate support portion 300 .

舉一示例，所述翹曲感應部作為測量基板支撐部300夾持基板10的夾持力的感測器，若在基板10的邊緣區域測量的夾持力低於正常範圍，則可判斷基板10的邊緣是向上側翹曲狀態，能夠以測量到的夾持力為基準判斷基板10的翹曲程度。 For example, the warpage sensing portion is used as a sensor for measuring the clamping force of the substrate support portion 300 to clamp the substrate 10. If the clamping force measured at the edge region of the substrate 10 is lower than the normal range, it can be determined that the substrate is The edge of the substrate 10 is in a warped state upward, and the warpage degree of the substrate 10 can be determined based on the measured clamping force.

若翹曲程度超出提前設定的基準，則所述控制部判斷需要對基板支撐部300進行清掃，因此可進行控制通過氣體流道部330供應表面清掃氣體SCG。 If the degree of warpage exceeds the pre-set reference, the control unit determines that the substrate support unit 300 needs to be cleaned, so that the surface cleaning gas SCG can be controlled to be supplied through the gas flow channel unit 330 .

對於所述控制部的動作，將與後述的基板處理方法一同進行說明。 The operation of the control unit will be described together with a substrate processing method to be described later.

另一方面，所述基板支撐部300還可包括凹槽340，所述凹槽340形成在基座部310上面，以使通過氣體流道部330供應的吹掃氣體PG及表面清掃氣體SCG中的至少一種氣體通過基座部310上面與被凸出部320支撐的基板10之間的空間擴散。 On the other hand, the substrate support part 300 may further include a groove 340 formed on the base part 310 so that the purging gas PG and the surface cleaning gas SCG supplied through the gas flow channel part 330 At least one of the gases diffuses through the space between the upper surface of the base portion 310 and the substrate 10 supported by the protruding portion 320 .

所述凹槽340是形成在基座部310上面的槽，以有效控制通過氣孔312噴射而流動於基座部310上面與基板10底面之間的吹掃氣體PG或者表面清掃氣體SCG的流動，所述凹槽340可形成各種形狀。 The groove 340 is a groove formed on the top of the base portion 310 to effectively control the flow of the purge gas PG or the surface cleaning gas SCG that flows between the top surface of the base portion 310 and the bottom surface of the substrate 10 through the air hole 312, The grooves 340 may be formed in various shapes.

舉一示例，所述凹槽340以凹陷的流道形狀形成在基座部310上面，用以引導通過氣孔312供應的吹掃氣體PG或者表面清掃氣體SCG以預定的流量從基座部310的中心區域均勻地擴散到周邊區域，以防止製程氣體流入基座部310上面與基板10底面之間。 As an example, the groove 340 is formed on the base part 310 in the shape of a concave flow channel to guide the purging gas PG or the surface cleaning gas SCG supplied through the air hole 312 from the base part 310 at a predetermined flow rate. The central area is uniformly diffused to the peripheral area to prevent the process gas from flowing between the top surface of the base portion 310 and the bottom surface of the substrate 10 .

更詳細地說，如圖2所示，所述凹槽340以圓弧形狀或者環形狀形成在基座部310上面的中心區域，可包括第一中心凹槽340c、第二中心凹槽340b及周邊凹槽340a，所述第一中心凹槽340c連接氣孔312和第一連接凹槽340d，所述第二中心凹槽340b在基座部310上面的中心區域形成圍繞第一中心 凹槽340c的環形狀，所述周邊凹槽340a在基座部310上面的周邊區域形成圍繞第二中心凹槽340b的環形狀。 In more detail, as shown in FIG. 2 , the groove 340 is formed in a central area above the base portion 310 in an arc shape or a ring shape, and may include a first central groove 340c, a second central groove 340b and a The peripheral groove 340a, the first central groove 340c is connected to the air hole 312 and the first connecting groove 340d, and the central area of the second central groove 340b above the base portion 310 is formed around the first center The ring shape of the groove 340c, the peripheral region of the peripheral groove 340a above the base portion 310 forms a ring shape around the second central groove 340b.

再者，為了引導從形成在基座部310中心部的氣孔312通過第一連接凹槽340d進入第一中心凹槽340c的吹掃氣體PG或者表面清掃氣體SCG以基座部310的中心為基準以放射狀均勻地以第二中心凹槽340b方向擴散，所述凹槽340可包括複數個第二連接凹槽340e，所述複數個第二連接凹槽340e以基座部310的中心為基準以放射狀等角配置來連接第一中心凹槽340c和第二中心凹槽340b。 Furthermore, in order to guide the purging gas PG or the surface cleaning gas SCG entering the first central groove 340c from the air hole 312 formed in the center portion of the base portion 310 through the first connecting groove 340d, the center of the base portion 310 is used as a reference. Spreading radially and uniformly in the direction of the second central groove 340b, the groove 340 may include a plurality of second connecting grooves 340e, and the plurality of second connecting grooves 340e are based on the center of the base portion 310 The first central groove 340c and the second central groove 340b are connected in a radial equiangular configuration.

例如，通過所述氣孔312供應到基座部310中心的吹掃氣體PG或者表面清掃氣體SCG以第一流量通過第一連接凹槽340d及基座部310上面的第一壓花之間的空間向第一中心凹槽340c擴散，向第一中心凹槽340c擴散的吹掃氣體PG或者表面清掃氣體SCG以第二流量通過第二連接凹槽340e及基座部310上面的第一壓花之間的空間向第二中心凹槽340b擴散，向第二中心凹槽340b擴散的吹掃氣體PG或者表面清掃氣體SCG以第三流量通過基座部310上面的第一壓花之間的空間可向周邊凹槽340a擴散。 For example, the purging gas PG or the surface cleaning gas SCG supplied to the center of the base portion 310 through the air hole 312 passes through the space between the first connecting groove 340d and the first embossing on the base portion 310 at a first flow rate The purging gas PG or the surface cleaning gas SCG diffused toward the first central groove 340c passes through the second connecting groove 340e and the first embossing on the base portion 310 at a second flow rate. The space between them diffuses toward the second central groove 340b, and the purging gas PG or the surface cleaning gas SCG diffused toward the second central groove 340b passes through the space between the first embossings on the base portion 310 at a third flow rate. Diffusion toward the peripheral groove 340a.

此時，對於吹掃氣體PG或者表面清掃氣體SCG，因為如上所述的凹槽340結構，第一流量、第二流量及第三流量具有相同的流量值，進而可引導吹掃氣體PG或者表面清掃氣體SCG以預定的流量以放射狀從基座部310的中心區域向周邊區域均勻地擴散。 At this time, for the purging gas PG or the surface cleaning gas SCG, because of the groove 340 structure as described above, the first flow rate, the second flow rate and the third flow rate have the same flow value, so that the purging gas PG or the surface cleaning gas can be guided. The purge gas SCG is uniformly diffused from the central region of the base portion 310 to the peripheral region in a radial pattern at a predetermined flow rate.

再者，為了使吹掃氣體PG或者表面清掃氣體SCG以基座部310的中心為基準以放射狀均勻地擴散，以基座部310中心為基準以放射狀等角配置的複數個第二連接凹槽340e的間隔α較佳可以是30度至60度。 Furthermore, in order to uniformly diffuse the purge gas PG or the surface cleaning gas SCG in a radial shape with reference to the center of the pedestal portion 310 , a plurality of second connections are arranged radially equiangularly with respect to the center of the pedestal portion 310 . The interval α of the grooves 340e may preferably be 30 degrees to 60 degrees.

另外，如圖4所示，較佳為，包括第一中心凹槽340c、第二中心凹槽340b、周邊凹槽340a的凹槽340的橫截面寬度W為2mm至4mm，深度H為50μm至100μm。 In addition, as shown in FIG. 4, preferably, the cross-sectional width W of the groove 340 including the first central groove 340c, the second central groove 340b, and the peripheral groove 340a is 2 mm to 4 mm, and the depth H is 50 μm to 50 μm to 4 mm. 100μm.

圖5是顯示在圖2及圖3的基板支撐部300的基座部310上面與被凸出部320支撐的基板10底面之間的空間流動的氣體(吹掃氣體PG或者表面清掃氣體SCG)的流量的曲線圖。 5 shows the gas (purging gas PG or surface cleaning gas SCG) flowing in the space between the upper surface of the base portion 310 of the substrate support portion 300 of FIGS. 2 and 3 and the bottom surface of the substrate 10 supported by the protruding portion 320 flow graph.

如圖5的(a)及(b)所示，參照第一個設計，顯示了若通過氣孔312供應的氣體通過連接通道直接向周邊區域的周邊凹槽340a擴散，則從基座部310 的中心向周邊區域流動的氣體的流量因為基座部310的位置而發生很大的偏差。 As shown in (a) and (b) of FIG. 5 , referring to the first design, it is shown that if the gas supplied through the air hole 312 diffuses directly to the peripheral groove 340a of the peripheral area through the connecting channel, the gas from the base portion 310 The flow rate of the gas flowing from the center to the peripheral region greatly varies depending on the position of the base portion 310 .

另外，參照第三個設計，若第一中心凹槽340c和第二中心凹槽340b由以基座部310的中心為基準以放射狀等角配置的複數個第二連接凹槽340e連接，以及第二中心凹槽340b和周邊凹槽340a也由以基座部310的中心為基準以放射狀等角配置的複數個第二連接凹槽340e連接，則與第一個設計相同，顯示從基座部310的中心向周邊區域流動的氣體流量因為基座部310的位置而發生偏差。 In addition, referring to the third design, if the first central groove 340c and the second central groove 340b are connected by a plurality of second connecting grooves 340e arranged radially and equiangularly with respect to the center of the base portion 310, and The second central groove 340b and the peripheral groove 340a are also connected by a plurality of second connecting grooves 340e radially and equiangularly arranged with respect to the center of the base portion 310, which is the same as the first design. The flow rate of the gas flowing from the center of the seat portion 310 to the peripheral region varies depending on the position of the base portion 310 .

然而，參照與本發明一實施例的基板支撐部300類似的第二個設計和第四個設計，若第一中心凹槽340c和第二中心凹槽340b由以基座部310的中心為基準以放射狀等角配置複數個第二連接凹槽340e連接，而周邊凹槽340a未用另外的連接凹槽連接，則顯示與基座部310的位置無關地從基座部310的中心向周邊區域流動的氣體的流量都非常恒定。 However, referring to the second design and the fourth design similar to the substrate support portion 300 of an embodiment of the present invention, if the first central groove 340c and the second central groove 340b are based on the center of the base portion 310 A plurality of second connecting grooves 340e are arranged in a radial and equiangular manner to connect, and the peripheral grooves 340a are not connected by another connecting groove, which shows that the center of the base portion 310 is not connected to the periphery of the base portion 310 regardless of the position of the base portion 310. The flow rate of the gas flowing in the area is very constant.

亦即，本發明通過氣孔312將吹掃氣體PG或者表面清掃氣體SCG供應於由基座部310上面與由凸出部320支撐的基板10底面之間，並且形成凹槽340及凸出部320，以用於在基座部310上面將吹掃氣體PG或者表面清掃氣體SCG以預定的流量均勻地擴散到基座部310周邊區域，進而可防止在周邊區域沉積金屬薄膜，並且可防止在基板交換時或者製程之間殘留氣體沉積在基座部310上面。 That is, the present invention supplies the purge gas PG or the surface cleaning gas SCG between the upper surface of the base portion 310 and the bottom surface of the substrate 10 supported by the protruding portion 320 through the air hole 312 , and the groove 340 and the protruding portion 320 are formed. , so as to evenly diffuse the purge gas PG or the surface cleaning gas SCG on the base portion 310 to the peripheral area of the base portion 310 at a predetermined flow rate, thereby preventing the deposition of metal thin films in the peripheral area and preventing the substrate The residual gas is deposited on the base portion 310 during exchange or between processes.

因此，在累積的基板處理中保持基座部310整體均勻且良好的夾持力能夠穩定地夾持基板10，並且防止因為基板10翹曲(Warpage)導致在基板10底面出現電弧，進而可具有減少基板處理缺陷發生的效果。 Therefore, it is possible to stably hold the substrate 10 by maintaining a uniform and good holding force as a whole of the base portion 310 during the accumulated substrate processing, and to prevent arcing on the bottom surface of the substrate 10 due to warpage of the substrate 10 , thereby having The effect of reducing the occurrence of substrate processing defects.

另外，所述基板支撐部300還可包括壩部350，所述壩部350沿基座部310上面的邊緣周圍形成相同或者高於凸出部320的高度。 In addition, the substrate support portion 300 may further include a dam portion 350 , and the dam portion 350 is formed at the same height or higher than the height of the protruding portion 320 along the periphery of the upper surface of the base portion 310 .

所述壩部350作為圍繞基座部310的邊緣周圍的環形狀的壁體，在基板處理時產生防止製程氣體流入基座部310上面與基板10底面之間的作用，同時可產生引導供應到氣孔312的吹掃氣體PG或者表面清掃氣體SCG停留在基座部310上面與基板10底面之間的空間的作用。 The dam portion 350 acts as a ring-shaped wall around the periphery of the base portion 310, and prevents the process gas from flowing into the space between the upper surface of the base portion 310 and the bottom surface of the substrate 10 during substrate processing, and at the same time can guide the supply to the base portion 310. The purging gas PG or the surface cleaning gas SCG of the air hole 312 acts to stay in the space between the upper surface of the base portion 310 and the bottom surface of the substrate 10 .

以下，參照圖8及圖9，詳細說明由包括上述結構的基板處理裝置執行的基板處理方法。 Hereinafter, referring to FIGS. 8 and 9 , the substrate processing method performed by the substrate processing apparatus having the above-described configuration will be described in detail.

所述基板處理方法可包括：主清掃步驟，間隔地反復執行，以通過氣體噴射部200供應腔室清掃氣體CCG清掃製程腔室100整個內部；基板支撐部清掃步驟，通過基板支撐部300向基板支撐部300與被基板支撐部300支撐的基板10之間的空間供應表面清掃氣體SCG來清掃基板支撐部300。 The substrate processing method may include: a main cleaning step, which is repeatedly performed at intervals, so as to supply the chamber cleaning gas CCG through the gas injection part 200 to clean the entire interior of the process chamber 100; The space between the support portion 300 and the substrate 10 supported by the substrate support portion 300 is supplied with the surface cleaning gas SCG to clean the substrate support portion 300 .

所述主清掃步驟是多次反復執行基板處理，之後可通過氣體噴射部200供應腔室清掃氣體CCG，以清掃製程腔室100整個內部。 The main cleaning step is to repeatedly perform substrate processing for many times, and then the chamber cleaning gas CCG can be supplied through the gas injection part 200 to clean the entire interior of the process chamber 100 .

所述腔室清掃氣體CCG以被遠程電漿啟動的活性物種狀態供應到製程腔室100，或者在製程腔室100內部以原位(In-situ)方式啟動以清掃製程腔室100整個內部。 The chamber cleaning gas CCG is supplied to the process chamber 100 in an active species state activated by remote plasma, or activated in an in-situ manner inside the process chamber 100 to clean the entire interior of the process chamber 100 .

如圖6所示，所述主清掃步驟間隔預定數量地反復執行，每當累積的基板處理數量達到已設定值時執行。舉一示例，在每次累積執行6000個的基板處理時可執行一次所述主清掃步驟。 As shown in FIG. 6 , the main cleaning step is repeatedly performed at predetermined intervals, and is performed every time the accumulated number of substrate processes reaches a set value. For example, the main cleaning step may be performed once every time 6000 substrate processes are cumulatively performed.

通過所述主清掃步驟，在累積的基板處理過程中可清除在製程腔室100內部的氣體噴射部200或者腔室內側壁、基板支撐部300沉積之不必要的沉積物質。 Through the main cleaning step, unnecessary deposition substances deposited on the gas injection part 200 inside the process chamber 100 or the inner sidewall of the chamber, and the substrate support part 300 can be removed during the accumulated substrate processing.

若完成所述主清掃步驟，則可多次執行基板10的基板處理。 If the main cleaning step is completed, the substrate processing of the substrate 10 may be performed multiple times.

在基板處理步驟中，所述控制部可控制氣體供應，以在基板處理製程中通過氣體流道部330持續供應吹掃氣體PG。 In the substrate processing step, the control unit may control the gas supply, so as to continuously supply the purge gas PG through the gas flow channel unit 330 during the substrate processing process.

所述基板支撐部清掃步驟通過基板支撐部300向基板支撐部300與被基板支撐部300支撐的基板10之間的空間供應表面清掃氣體SCG以清掃基板支撐部300。 The substrate support portion cleaning step supplies the surface cleaning gas SCG to the space between the substrate support portion 300 and the substrate 10 supported by the substrate support portion 300 through the substrate support portion 300 to clean the substrate support portion 300 .

所述基板支撐部清掃步驟在主清掃步驟之間執行，或者可與主清掃步驟一同執行。 The substrate support portion cleaning step is performed between the main cleaning steps, or may be performed together with the main cleaning step.

舉一示例，如圖6及圖8所示，所述基板支撐部清掃步驟可在主清掃步驟之間執行，也可間隔數量地反復執行。 As an example, as shown in FIGS. 6 and 8 , the cleaning step of the substrate support portion may be performed between the main cleaning steps, or may be repeatedly performed at intervals.

圖6至圖8顯示了基板支撐部清掃步驟在主清掃步驟之間間隔地執行多次的實施例，但是當然也可以實現基板支撐部清掃步驟與主清掃步驟同時執行的實施例。 FIGS. 6 to 8 show an embodiment in which the substrate support cleaning step is performed multiple times at intervals between the main cleaning steps, but of course an embodiment in which the substrate support cleaning step and the main cleaning step are performed simultaneously is also possible.

所述基板支撐部清掃步驟在導入製程腔室100被基板支撐部300夾持的基板10翹曲(wargage)程度於已設定的基準以上的情況下執行，或者可在 每個在已設定的基板處理累積數量時(例如，每次累積2000個的基板處理時)執行。 The cleaning step of the substrate support portion is performed when the warpage of the substrate 10 held by the substrate support portion 300 introduced into the process chamber 100 is greater than or equal to a predetermined reference, or may be performed at Each is executed at the set cumulative number of substrate treatments (for example, every time 2000 substrate treatments are accumulated).

在未執行所述主清掃步驟或者基板支撐部清掃步驟時，在製程腔室100中進行基板處理的基板處理步驟可累積反復執行。 When the main cleaning step or the substrate support portion cleaning step is not performed, the substrate processing steps in which the substrate processing is performed in the process chamber 100 may be cumulatively and repeatedly performed.

在所述基板處理步驟中，上述的控制部可控制吹掃氣體閥門及清掃氣體閥門的動作，以使吹掃氣體PG通過氣孔312供應到基座部310與基板10之間的空間，進而在基板處理中不在基板10底面進行基板處理。 In the substrate processing step, the above-mentioned control part can control the action of the purge gas valve and the purge gas valve, so that the purge gas PG is supplied to the space between the base part 310 and the substrate 10 through the air hole 312 , and then in the During the substrate processing, the substrate processing is not performed on the bottom surface of the substrate 10 .

在基板10未安裝基座部310時，諸如基板處理步驟之間交換基板10時，殘留於製程腔室100內的反應性氣體沉積在基座部310上面，隨著這種基板處理步驟反復執行，基座部310的夾持力變弱，需要清掃以去除基板支撐部300(尤其是基座部310)上面的薄膜。 When the base portion 310 is not mounted on the substrate 10, such as when the substrate 10 is exchanged between substrate processing steps, the reactive gas remaining in the process chamber 100 is deposited on the base portion 310, and the substrate processing steps are repeatedly performed. , the clamping force of the base portion 310 becomes weak, and cleaning is required to remove the film on the substrate support portion 300 (especially the base portion 310 ).

若到需要執行清掃基板支撐部的時間點，例如因為基座部310的夾持力變弱，基板10導入製程腔室100被基板支撐部300夾持的基板10的翹曲(wargage)程度在已設定的基準以上等，則可執行基板支撐部清掃步驟。 When it is time to perform cleaning of the substrate support portion, for example, because the clamping force of the base portion 310 is weakened, the warg of the substrate 10 that is introduced into the process chamber 100 and clamped by the substrate support portion 300 is within If it is more than the set standard, the cleaning step of the substrate support portion can be performed.

所述基板支撐部清掃步驟中，控制部可控制吹掃氣體閥門及表面清掃氣體閥門的動作，以通過氣孔312使表面清掃氣體SCG或者表面清掃氣體SCG和惰性的吹掃氣體PG一同供應到基座部310與基板10之間的空間。 In the cleaning step of the substrate support part, the control part can control the action of the purge gas valve and the surface cleaning gas valve, so that the surface cleaning gas SCG or the surface cleaning gas SCG and the inert cleaning gas PG are supplied to the substrate through the air hole 312. The space between the seat portion 310 and the substrate 10 .

更詳細地說，所述基板支撐部清掃步驟可包括：向製程腔室100導入虛擬基板的虛擬基板導入步驟S901；基板支撐部300夾持虛擬基板的虛擬基板夾持步驟S902；向基板支撐部300上面與虛擬基板之間的空間供應表面清掃氣體SCG的清掃氣體供應步驟S903。 In more detail, the cleaning step of the substrate support portion may include: a dummy substrate introduction step S901 for introducing a dummy substrate into the process chamber 100 ; a dummy substrate clamping step S902 for the substrate support portion 300 to clamp the dummy substrate; 300 Step S903 of supplying the cleaning gas of the surface cleaning gas SCG to the space between the upper surface and the dummy substrate.

所述虛擬基板結構與上述的基板10相同，可以是在基板支撐部清掃步驟中使用的清掃用基板。 The dummy substrate has the same structure as the substrate 10 described above, and may be a substrate for cleaning used in the step of cleaning the substrate support portion.

亦即，所述基板支撐部清掃步驟可在基板支撐部300夾持虛擬基板10的狀態下執行，以使基板支撐部300上面與虛擬基板之間的空間中的表面清掃氣體SCG可有效地從基板支撐部300的中央向外側擴散。 That is, the substrate supporting portion cleaning step may be performed in a state in which the substrate supporting portion 300 clamps the dummy substrate 10, so that the surface cleaning gas SCG in the space between the upper surface of the substrate supporting portion 300 and the dummy substrate can be effectively removed from the substrate supporting portion 300. The center of the substrate support portion 300 spreads outward.

所述清掃氣體供應步驟可將惰性的吹掃氣體PG與表面清掃氣體SCG一同供應到基板支撐部300上面，更詳細地說可供應到基座部310上面與虛擬基板之間的空間。 The purge gas supply step may supply the inert purge gas PG together with the surface purge gas SCG to the upper surface of the substrate support portion 300 , more specifically, to the space between the upper surface of the base portion 310 and the dummy substrate.

向所述基座部310上面與虛擬基板之間的空間供應的表面清掃氣體SCG在去除基座部310上面的薄膜之後與副產物一同向製程腔室100外側排放，而虛擬基板從製程腔室100排出S904，進而可完成基板支撐部清掃步驟。 The surface cleaning gas SCG supplied to the space between the upper surface of the susceptor 310 and the dummy substrate is discharged to the outside of the process chamber 100 together with by-products after the film on the susceptor 310 is removed, and the dummy substrate is discharged from the process chamber 100 discharges S904, and then the cleaning step of the substrate support portion can be completed.

所述基板支撐部清掃步驟只對與基板支撐部300上面相對應的非常小的區域執行清掃，因此如圖6所示，與需要一天左右的時間的主清掃步驟不同，只執行30分鐘左右的非常短的時間也可得到充分的效果。 The cleaning step of the substrate support part is performed only on a very small area corresponding to the upper surface of the substrate support part 300, so as shown in FIG. 6, unlike the main cleaning step which takes about a day, only about 30 minutes is performed A sufficient effect can be obtained in a very short period of time.

本發明在除了清掃整個製程腔室100的主清掃步驟以外，在主清掃步驟之間將在短時間的時間間隔期間去除沉積在基板支撐部300上面的薄膜的基板支撐部清掃步驟執行一次以上，進而即使有增加累積的基板處理次數，也能夠持續保持基板支撐部300對基板10的良好的夾持力，因此具有可防止引起電弧或者基板處理缺陷的基板翹曲現象(Warpage)的優點。 In the present invention, in addition to the main cleaning step of cleaning the entire process chamber 100, the substrate support cleaning step of removing the film deposited on the substrate support 300 during short time intervals is performed more than once between the main cleaning steps, Furthermore, even if the accumulated number of substrate processing times is increased, the good clamping force of the substrate support portion 300 to the substrate 10 can be continuously maintained, so there is an advantage that the substrate warpage phenomenon (warpage) that causes arcing or substrate processing defects can be prevented.

另外，本發明在製程腔室100的主清掃步驟之間還針對基板支撐部300表面執行基板支撐部清掃步驟，進而也具有可將對執行主清掃步驟的清掃週期的利用最大化的優點。 In addition, the present invention also performs the substrate support portion cleaning step on the surface of the substrate support portion 300 between the main cleaning steps of the process chamber 100 , thereby maximizing the utilization of the cleaning cycle for performing the main cleaning step.

例如，假設在以往對400個的基板10反復執行基板處理之後定期進行主清掃時，由於本發明包括基板支撐部清掃步驟，因此即使定期執行400個以上(例如，600個)的基板處理，也可得到充分的清掃效果。 For example, if the conventional main cleaning is performed periodically after the substrate processing is repeatedly performed on 400 substrates 10, since the present invention includes the substrate support portion cleaning step, even if 400 or more (for example, 600) substrate processings are periodically performed, the A sufficient cleaning effect can be obtained.

亦即，本發明對執行所需時間長的主清掃的利用最大化，進而可提高基板處理裝置的產量。 That is, the present invention maximizes the utilization of the main cleaning that takes a long time to perform, thereby improving the throughput of the substrate processing apparatus.

以上僅是說明了可由本發明實現的較佳實施例的一部分，眾所周知本發明的範圍不被上述的實施例限定地解釋，以上說明的本發明的技術思想及其根本的技術思想應全部包括在本發明的範圍內。 The above is only a part of the preferred embodiments that can be realized by the present invention. It is well known that the scope of the present invention is not limited to the above-mentioned embodiments. within the scope of the present invention.

300‧‧‧基板支撐部 300‧‧‧Substrate support

312‧‧‧氣孔 312‧‧‧Stomata

320‧‧‧凸出部 320‧‧‧Projection

330‧‧‧氣體流道部 330‧‧‧Gas runner

340‧‧‧凹槽 340‧‧‧grooves

340a‧‧‧周邊凹槽 340a‧‧‧Circumferential groove

340b‧‧‧第二中心凹槽 340b‧‧‧Second center groove

340c‧‧‧第一中心凹槽 340c‧‧‧First center groove

340d‧‧‧第一連接凹槽 340d‧‧‧First connecting groove

350‧‧‧壩部 350‧‧‧ Dam Department

10‧‧‧基板 10‧‧‧Substrate

PG‧‧‧吹掃氣體 PG‧‧‧Purge gas

SCG‧‧‧表面清掃氣體 SCG‧‧‧surface cleaning gas

Claims (12)

一種基板處理裝置，包括：一製程腔室(100)，形成密封的一處理空間(S)；一氣體噴射部(200)，設置在所述製程腔室(100)上側並噴射用於基板處理的一製程氣體及用於清掃所述製程腔室(100)內部的一腔室清掃氣體(CCG)；以及一基板支撐部(300)，設置在所述製程腔室(100)並安裝有一個以上的基板(10)，其中，所述基板支撐部(300)包括：一基座部(310)，在上面安裝所述基板(10)；複數個凸出部(320)，形成為凸出在所述基座部(310)上面以支撐所述基板(10)；一氣體流道部(330)，貫通所述基座部(310)，以與所述基座部(310)上面和被所述複數個凸出部(320)支撐的所述基板(10)之間的空間連通；以及一表面清掃氣體供應部，連接於所述氣體流道部(330)，以用於通過所述氣體流道部(330)供應所述表面清掃氣體(SCG)，以使所述表面清掃氣體(SCG)流動於所述複數個凸出部(320)之間，其中，所述基板處理裝置包括一控制部，所述控制部用於通過在一主清掃製程之間控制通過所述氣體流道部(330)的所述表面清掃氣體(SCG)的供應來執行一基板支撐部清掃製程，所述主清掃製程是利用所述腔室清掃氣體(CCG)清掃所述製程腔室(100)內部，以及其中，為了在未執行所述主清掃製程及所述基板支撐部清掃製程時，根據在所述製程腔室(100)內反復執行的基板處理去除沉積在所述基座部(310)上面的沉積物，所述控制部進行控制以通過所述氣體流道部(330)向所述基板支撐部(300)和被所述基板支撐部(300)支撐的所述基板(10)之間的空間供應所述表面清掃氣體(SCG)。 A substrate processing apparatus, comprising: a process chamber (100) forming a sealed processing space (S); a gas injection part (200) arranged on the upper side of the process chamber (100) and spraying for substrate processing a process gas and a chamber cleaning gas (CCG) for cleaning the interior of the process chamber (100); and a substrate support part (300) disposed in the process chamber (100) and mounted with a The above substrate (10), wherein the substrate support portion (300) comprises: a base portion (310) on which the substrate (10) is mounted; and a plurality of protruding portions (320) formed to protrude on the base part (310) to support the substrate (10); a gas flow channel part (330) penetrates through the base part (310) to connect with the base part (310) and the upper surface space communication between the substrates (10) supported by the plurality of protruding parts (320); and a surface cleaning gas supply part connected to the gas flow channel part (330) for passing through the The gas flow channel part (330) supplies the surface cleaning gas (SCG), so that the surface cleaning gas (SCG) flows between the plurality of protruding parts (320), wherein the substrate processing apparatus comprising a control portion for performing a substrate support portion cleaning process by controlling the supply of the surface cleaning gas (SCG) through the gas flow channel portion (330) between a main cleaning process, The main cleaning process uses the chamber cleaning gas (CCG) to clean the inside of the process chamber (100), and wherein, when the main cleaning process and the substrate support part cleaning process are not performed, according to The substrate processing repeatedly performed in the process chamber (100) removes the deposits deposited on the base portion (310), and the control portion controls the gas flow channel portion (330) to pass through the gas flow channel portion (330). The surface cleaning gas (SCG) is supplied to the space between the substrate support portion (300) and the substrate (10) supported by the substrate support portion (300). 根據申請專利範圍第1項所述的基板處理裝置，其中，所述基板支撐部(300)是在所述基座部(310)安裝電極以通過靜電力夾持所述基板(10)的一靜電夾盤。 The substrate processing apparatus according to claim 1, wherein the substrate support portion (300) is a substrate (300) that mounts electrodes on the base portion (310) to clamp the substrate (10) by electrostatic force. electrostatic chuck. 根據申請專利範圍第1項所述的基板處理裝置，其中，所述基板支撐部(300)還包括：一凹槽(340)，形成在所述基座部(310)上面，以通過所述基座部(310)的上面和被所述凸出部(320)支撐的所述基板(10)之間的空間擴散通過所述氣體流道部(330)供應的吹掃氣體(PG)及所述表面清掃氣體(SCG)的中的至少一種氣體。 The substrate processing apparatus according to claim 1, wherein the substrate support part (300) further comprises: a groove (340) formed on the base part (310) to pass the The space between the upper surface of the base part (310) and the substrate (10) supported by the protruding part (320) diffuses the purge gas (PG) supplied through the gas flow channel part (330) and At least one of the surface cleaning gases (SCG). 根據申請專利範圍第1項所述的基板處理裝置，其中，所述基板支撐部(300)還包括一壩部(350)，所述壩部(350)沿著所述基座部(310)的上面邊緣周圍形成相同或者高於所述凸出部(320)的高度。 The substrate processing apparatus according to claim 1, wherein the substrate support portion (300) further comprises a dam portion (350), the dam portion (350) being along the base portion (310) The height of the protrusion (320) is formed around the upper edge of the same or higher than the height of the protrusion (320). 根據申請專利範圍第1項所述的基板處理裝置，其中，在所述基座部(310)的上面形成有與所述氣體流道部(330)連通的複數個氣孔(312)，所述氣體流道部(330)從所述基板支撐部(300)內部分支，以分別與所述複數個氣孔(312)連通。 The substrate processing apparatus according to claim 1, wherein a plurality of air holes (312) communicating with the gas flow channel portion (330) are formed on the upper surface of the base portion (310), the The gas flow channel part (330) is branched from the inside of the substrate support part (300) to communicate with the plurality of air holes (312), respectively. 根據申請專利範圍第1項至第5項中任意一項所述的基板處理裝置，其中，所述基板支撐部(300)還包括一吹掃氣體供應部，所述吹掃氣體供應部連接於所述氣體流道部(330)，用於通過所述氣體流道部(330)供應所述吹掃氣體(PG)，以使所述吹掃氣體(PG)流動於所述複數個凸出部(320)之間，所述控制部進行控制，以在所述基板處理製程中通過所述氣體流道部(330)持續供應所述吹掃氣體(PG)。 The substrate processing apparatus according to any one of the claims 1 to 5, wherein the substrate support part (300) further comprises a purge gas supply part, the purge gas supply part is connected to the gas flow channel part (330) for supplying the purge gas (PG) through the gas flow channel part (330), so that the purge gas (PG) flows over the plurality of protrusions Between the parts (320), the control part controls to continuously supply the purge gas (PG) through the gas flow channel part (330) during the substrate processing process. 一種基板處理裝置，包括：一製程腔室(100)，形成密封的一處理空間(S)；一氣體噴射部(200)，設置在所述製程腔室(100)上側並噴射用於基板處理的製程氣體及用於清掃所述製程腔室(100)內部的腔室清掃氣體(CCG)；以及一基板支撐部(300)，設置在所述製程腔室(100)並且安裝有一個以上的基板(10)，其中，所述基板支撐部(300)包括：一基座部(310)，在上面安裝所述基板(10)；複數個凸出部(320)，形成為凸出在所述基座部(310)上面以支撐所述基板(10)； 一氣體流道部(330)，貫通所述基座部(310)，以與所述基座部(310)上面和被所述複數個凸出部(320)支撐的所述基板(10)之間的空間連通；以及一表面清掃氣體供應部，連接於所述氣體流道部(330)，以用於通過所述氣體流道部(330)供應所述表面清掃氣體(SCG)，以使所述表面清掃氣體(SCG)流動於所述複數個凸出部(320)之間；其中，所述基板處理裝置還包括：一控制部，所述控制部進行控制以在一主清掃製程之間通過所述氣體流道部(330)供應所述表面清掃氣體(SCG)，所述主清掃製程是利用所述腔室清掃氣體(CCG)清掃所述製程腔室(100)內部；以及一翹曲感應部，用於感應被所述基板支撐部(300)夾持的所述基板(10)的翹曲程度，所述控制部進行控制，在所述翹曲程度於設定的基準以上的情況下，通過所述氣體流道部330供應所述表面清掃氣體(SCG)。 A substrate processing apparatus, comprising: a process chamber (100) forming a sealed processing space (S); a gas injection part (200) arranged on the upper side of the process chamber (100) and spraying for substrate processing process gas and a chamber cleaning gas (CCG) for cleaning the interior of the process chamber (100); and a substrate support portion (300) disposed in the process chamber (100) and installed with more than one A base plate (10), wherein the base plate support part (300) comprises: a base part (310) on which the base plate (10) is mounted; and a plurality of protruding parts (320) formed to protrude at the place on the base portion (310) to support the base plate (10); A gas flow channel part (330) penetrates through the base part (310) to connect with the upper surface of the base part (310) and the base plate (10) supported by the plurality of protruding parts (320) and a surface cleaning gas supply part connected to the gas flow channel part (330) for supplying the surface cleaning gas (SCG) through the gas flow channel part (330), to The surface cleaning gas (SCG) is made to flow between the plurality of protruding parts (320); wherein, the substrate processing apparatus further includes: a control part, the control part controls to perform a main cleaning process The surface cleaning gas (SCG) is supplied through the gas flow channel portion (330), and the main cleaning process uses the chamber cleaning gas (CCG) to clean the interior of the process chamber (100); and A warpage sensing part for sensing the warpage degree of the substrate (10) clamped by the substrate support part (300), and the control part controls the warpage degree when the warpage degree is above a set reference In the case of , the surface cleaning gas (SCG) is supplied through the gas flow channel portion 330 . 一種基板處理方法，由申請專利範圍第1項至第5項中任意一項所述的基板處理裝置執行，其中，該方法包括：一主清掃步驟，在多次執行所述基板處理之後，間隔地反復執行，以通過所述氣體噴射部(200)供應所述腔室清掃氣體(CCG)以清掃所述製程腔室(100)的整個內部；以及一基板支撐部清掃步驟，通過所述基板支撐部(300)向所述基板支撐部(300)和被所述基板支撐部(300)支撐的所述基板(10)之間的空間供應所述表面清掃氣體(SCG)以清掃所述基板支撐部(300)。 A substrate processing method, performed by the substrate processing apparatus described in any one of the claims 1 to 5, wherein the method comprises: a main cleaning step, after performing the substrate processing for a plurality of times, the are repeatedly performed to supply the chamber cleaning gas (CCG) through the gas injection part (200) to clean the entire interior of the process chamber (100); and a substrate support cleaning step, passing the substrate The support part (300) supplies the surface cleaning gas (SCG) to the space between the substrate support part (300) and the substrate (10) supported by the substrate support part (300) to clean the substrate Support part (300). 根據申請專利範圍第8項所述的基板處理方法，其中，所述基板支撐部清掃步驟在所述主清掃步驟之間執行或者與所述主清掃步驟一同執行。 The substrate processing method according to claim 8, wherein the substrate support portion cleaning step is performed between the main cleaning steps or together with the main cleaning step. 根據申請專利範圍第8項所述的基板處理方法，其中，所述基板支撐部清掃步驟在導入所述製程腔室(100)被所述基板支撐部(300)夾持的基板(10)的翹曲程度於提前設定的基準以上的情況下執行。 The substrate processing method according to claim 8, wherein the substrate support part cleaning step is performed when the substrate (10) held by the substrate support part (300) is introduced into the process chamber (100) It is executed when the warpage degree is greater than or equal to the reference set in advance. 根據申請專利範圍第8項所述的基板處理方法，其中，所述基板支撐部清掃步驟包括：一虛擬基板導入步驟，向所述製程腔室(100)導入一虛擬基板； 一虛擬基板夾持步驟，在所述基板支撐部(300)夾持所述虛擬基板；以及一清掃氣體供應步驟，向所述基板支撐部(300)上面與所述虛擬基板之間的空間供應所述表面清掃氣體(SCG)。 The substrate processing method according to claim 8, wherein the cleaning step of the substrate support portion comprises: a dummy substrate introduction step of introducing a dummy substrate into the process chamber (100); a dummy substrate clamping step of clamping the dummy substrate at the substrate support part (300); and a cleaning gas supply step of supplying the space between the upper surface of the substrate support part (300) and the dummy substrate The surface sweep gas (SCG). 根據申請專利範圍第11項所述的基板處理方法，其中，所述清掃氣體供應步驟將惰性的所述吹掃氣體(PG)和所述表面清掃氣體(SCG)一同供應到所述基板支撐部(300)的上面與所述虛擬基板之間的空間。 The substrate processing method according to claim 11, wherein the purge gas supplying step supplies the inert purge gas (PG) together with the surface purge gas (SCG) to the substrate support portion The space between the upper surface of (300) and the virtual substrate.
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