KR20040075180A - Apparatus for Depositting Chamical Vapor and Method for Manufacturing thereof - Google Patents

Abstract

PURPOSE: A CVD apparatus and a fabricating method thereof are provided to reduce the mechanical shock due to the mis-alignment by inserting an alignment pin into an insertion part of a bushing. CONSTITUTION: A vacuum chamber(116) includes a gas inflow hole(112) and a gas outflow hole(114). A susceptor(120) is installed in the inside of the vacuum chamber. A substrate is loaded on the susceptor. A chamber bottom wall(137) is used for surrounding the outside of the susceptor. A bushing(140) is installed at an edge of the chamber bottom wall. An alignment pin is inserted into an insertion part of the bushing. A shadow frame(130) includes an alignment pin(131). The shadow frame is used for covering an edge of the substrate loaded on the susceptor.

Description

Chemical vapor deposition equipment and its manufacturing method {Apparatus for Depositting Chamical Vapor and Method for Manufacturing

The present invention relates to a chemical vapor deposition apparatus and a manufacturing method thereof, and more particularly, to a shadow frame for chemical vapor deposition equipment.

The chemical vapor deposition apparatus is mainly used in the process of depositing a thin film for a thin film transistor liquid crystal display device.

Recently, liquid crystal displays have been spotlighted as next generation advanced display devices having high added value as a technology-intensive product having light weight, thin shape, low power consumption, and good portability.

In general, a liquid crystal display device displays an image corresponding to a data signal on a panel by adjusting light transmittance of liquid crystal cells arranged in a matrix on a liquid crystal panel with a video data signal supplied thereto. Such a liquid crystal display device includes electrodes for applying an electric field to the liquid crystal layer, a thin film transistor for switching data supply for each liquid crystal cell, a signal wiring for supplying data supplied from the outside to the liquid crystal cells, and a control signal for the thin film transistor. And a top plate formed with a signal wiring for the purpose, a top plate formed with a color filter, etc., a spacer formed between the top plate and the bottom plate to secure a constant cell gap, and a liquid crystal filled in a space provided between the top and bottom plates by the spacer. do.

Therefore, a thin film must be deposited on the substrate of the liquid crystal display, and the equipment used at this time is a chemical vapor deposition apparatus.

Generally, as a chemical vapor deposition apparatus for depositing a thin film on a substrate of a liquid crystal display device, a plasma enhanced chemical vapor deposition apparatus (hereinafter, abbreviated as a PECVD apparatus) is commonly used. Explain about.

1 is a cross-sectional view schematically showing a conventional PECVD equipment.

As shown in the drawing, the vacuum chamber 16 having the gas inlet 12 and the exhaust port 14 forms an upper electrode, a diffuser 11 for diffusing gas, and a susceptor 20 forming the lower electrode. ) Are opposed to each other at a predetermined interval, and the diffuser 11 is connected to a radio frequency (RF) power supply 24 for supplying a high frequency, and the susceptor 20 is grounded to ground the RF power 24. (ground) voltage is connected.

The diffuser 11 serves to control the flow of the reaction gas supplied through the gas inlet 12, and the susceptor 20 has a heater function to supply thermal energy to the substrate 18 to be deposited. In addition, the substrate 18 is movable to move upward and downward.

In addition, a shadow frame 30 is positioned on both outer portions of the substrate 18, and the shadow frame 30 covers the outer portion of the substrate by a predetermined interval so that the plasma 31 is discharged to the outside of the substrate 18. It acts as a kind of mask that prevents the deposition and maintains uniformity of the deposition thickness.

A pin plate 40 is formed at a lower portion of the susceptor 20 to be spaced apart from the susceptor 20 at a predetermined interval, and a susceptor is disposed at the center between the pin plate 40 and the susceptor 20. A support shaft elevator 42 is provided that moves 20 up and down.

A guide pin 32 is formed at an upper portion of the pin plate 40 to penetrate the boundary between the substrate contact region i and the substrate non-contact region ii of the susceptor 20 and guide both ends of the substrate 18. It is formed in an upward direction.

In addition, a shadow frame 30 is positioned at an upper portion corresponding to both outer portions of the substrate 18 placed on the susceptor 20, and in this step, the shadow frame 30 is a chamber lower wall 37. Supported by the substrate 18 and spaced apart from the substrate 18 by a predetermined interval.

The chamber lower wall 37 is an inner wall in contact with the shadow frame, and is distinguished from an outer wall constituting the outside of the vacuum chamber to maintain a vacuum state, and the chamber lower wall described below means the inner wall.

The process of performing deposition on the substrate 18 using the PECVD will be described in more detail below.

In the PECVD apparatus for thin film deposition during the manufacturing process of the liquid crystal display device, a gas required for deposition is injected into a vacuum chamber, and when a desired pressure and substrate temperature are set, the injected gas is decomposed into a plasma state using RF power. By depositing on a substrate, the deposition mechanism is a first reaction in which gaseous compounds introduced into the chamber are decomposed, a second reaction in which decomposed gas ions and radical ions in an unstable ion state interact with each other, The interaction of atoms resulting from the recombination of gas ions and radical ions on the substrate 18 to be deposited can be divided into a tertiary reaction in which a thin film is formed after nucleation.

The gaseous compound to be introduced depends on the type of film to be formed. In general, in the case of silicon nitride, a mixed gas of SiH ₄ , H ₂ , NH ₃ and N ₂ is used, and SiH ₄ and H ₂ are used to deposit an amorphous silicon film. In the formation of the impurity amorphous silicon film (n + a-Si) which increases the electron mobility by doping phosphorus (P), PH ₃ is added to the reaction gas for amorphous silicon.

In the deposition process by the PECVD apparatus, the RF power, the deposition temperature, the gas inflow amount, and the distance between the electrode and the substrate determine the characteristics of the thin film.

In the following description, the internal structure of the PECVD apparatus will be described in detail, and a method of fixing the shadow frame 20 of the PECVD apparatus in the vacuum chamber will be described in detail.

FIG. 2 schematically illustrates a plane corresponding to region 'I' of FIG. 1, and for convenience of description, illustration of a substrate is omitted.

As illustrated, the lower portion of the vacuum chamber 16 including the susceptor 20 and the shadow frame 30 having a rectangular frame shape are separately shown.

The lower wall 37 for supporting the shadow frame 30 is surrounded by the susceptor 20.

On the non-substrate region ii of the susceptor 20, a plurality of guide pins 32 for fixing each corner of the substrate and an alignment pin for fixing the shadow frame 30 at positions corresponding to the center points of the four sides. 34 is formed, and a plurality of lift pins 36 are formed in the substrate contact area to move the substrate up and down to facilitate loading and unloading of the substrate.

Meanwhile, a plurality of alignment grooves 38 are formed in the shadow frame 30, and the alignment grooves 38 are indicated by dotted lines and positions corresponding to the centers of the opposite sides of the shadow frame 30. As described above, the alignment pin 34 of the susceptor 20 has a positional relationship corresponding to that of the susceptor 20 so that the alignment pin 34 is normally inserted into the alignment groove 38. do.

That is, it can be seen that the shadow frame 30 is stably fixed in the chamber depends on the degree of coupling of the alignment groove 38 and the alignment pin 34.

Hereinafter, the necessity of aligning the shadow frame 30 according to the vertical movement of the susceptor 20 will be described in detail according to the progress of the deposition process.

First, the substrate 18 is loaded onto the upper surface of the susceptor 20 from a loading part formed at one side of the vacuum chamber 16. At this time, the alignment pin 34 provided in the susceptor 20 is in contact with the shadow frame 30, and the shadow frame 30 is supported by the chamber lower wall 37.

Thereafter, the step of moving the susceptor 20 to the deposition position proceeds, and as the length of the support elevator 42 increases upward, the substrate contact area i of the susceptor 20 is not in contact with the substrate. The region ii simultaneously moves upward, and the alignment pins 34 of the susceptor 20 move together in a direction corresponding to the alignment grooves 38 below the shadow frame 30.

Thereafter, in order to proceed with the deposition of the substrate 18, the susceptor 20 on which the substrate 18 is placed is moved to a deposition position.

In the deposition position, the shadow frame 30 is spaced apart from the chamber lower wall 37 by the lifting force of the susceptor 20 is fixed by contact with the susceptor 20.

At this time, the contact stability between the susceptor 20 and the shadow frame 30 depends on the degree of alignment between the alignment pin 34 and the alignment groove (38 in FIG. 2).

3A and 3B are diagrams illustrating cases where the shadow frame 30 is misaligned, respectively.

3A is a view showing a step of loading a substrate into the susceptor 20. In this case, when the shadow frame 30 is loaded into the chamber, it is temporarily fixed without an additional alignment device on the upper chamber lower wall 37. As the pressure in the chamber 16 changes rapidly in the back stream during pumping off or in the pumping in the chamber 16, as shown in the drawing, the shadow frame 30 It will be displaced from its original position. Therefore, when the shadow frame 30 is fixed to the susceptor 20, the probability of misalignment between the shadow frame 30 and the susceptor 20 increases due to the upward force of the susceptor 20.

3B shows that the shadow frame 30 is fixed by the chamber lower wall 37 so that the shadow frame 30 is spaced apart from the chamber lower wall 37 by a lift force of the susceptor 20, thereby providing a substrate ( Covering the outer portion of 18, and is fixed by the alignment pin 34 of the susceptor 20. FIG. 3B shows a misalignment as described with reference to FIG. 3A and the alignment pin 34 is damaged.

If a misalignment occurs, the following problems occur.

First, in general, the alignment pin 34 is made of a ceramic material and is fixed to the substrate non-contacting part ii of the susceptor 20 by screwing, and in view of the material characteristics of the alignment pin 34. The screwed portion has a structure vulnerable to mechanical impact.

Therefore, when the misalignment occurs as described above, as the susceptor 20 rises, the alignment pin 34 is not inserted into the alignment groove 38 and hits the shadow frame 30 so that the alignment pin ( 34) is a problem that is broken.

Second, since the shadow frame 30 is made of alumina (Al 2 O 3) having a lower mechanical strength than ceramic, when the shadow frame 30 and the alignment pin 34 collide with each other by the lifting force of the susceptor 20, Particles (particles) causing poor deposition occur at the contact surface between the shadow frame 30 and the alignment pin 34.

Generation of this particle acts as a cause of generating a short between the metal wirings formed in the before and after processes with the deposition film interposed therebetween, resulting in a product defect.

Third, as shown in FIGS. 3A and 3B, when the shadow frame 30 is unstablely fixed in the vacuum chamber 16, a gap is formed in the part of the susceptor 20 that functions as an anode in the chamber in the deposition process. Plasma leakage caused by the uniformity of the plasma density is destroyed, resulting in poor deposition, such as non-uniform deposition, thereby lowering the equipment operation rate and lowering the production yield.

The present invention has been made to solve the above problems, by providing a more stable and effective alignment structure in order to accurately contact the substrate to the shadow frame in PECVD equipment, to improve the process stabilization to improve the production yield and equipment operation rate An object of the present invention is to provide a chemical vapor deposition apparatus and a method for manufacturing the same.

1 is a cross-sectional view of a chemical vapor deposition apparatus according to the prior art.

2 is a plan view of a portion "I" of FIG.

3A is a cross-sectional view illustrating a case in which misalignment occurs in a shadow frame in an unread state according to the related art.

3B is a cross-sectional view when the shadow frame according to the prior art is raised to the deposition position.

Figure 4 is a cross-sectional view of the chemical vapor deposition apparatus according to the present invention.

5 is a three-dimensional view of the alignment structure of the shadow frame according to the present invention.

6 is a three-dimensional view of the bushing according to the present invention.

7 is a cross-sectional view of a structure in which an alignment pin is mounted on a bushing according to the present invention.

8A is a cross-sectional view of an alignment structure of a shadow frame in an unread state according to the present invention.

8B is a sectional view of an alignment structure when the shadow frame according to the present invention is raised to the deposition position.

9 is a plan view of the shadow frame viewed from above.

10 is a graph showing the change in length due to thermal expansion in the short and long sides of the shadow frame.

<Description of Symbols for Major Parts of Drawings>

120: susceptor 130: shadow frame

131: alignment pin 140: bushing

140a: alignment pin accommodation

In order to achieve the above object, the chemical vapor deposition apparatus according to the present invention includes a vacuum chamber having a gas inlet and an exhaust port, a substrate on which a reactant formed in the vacuum chamber is deposited, and the substrate is placed in the vacuum chamber. A bushing having a susceptor movable up and down, a chamber lower wall surrounding the periphery of the susceptor, a receiving portion provided at an edge of the chamber lower wall at a lower portion of the vacuum chamber and into which an alignment pin is inserted; Covering the edge of the substrate, and provides a chemical vapor deposition apparatus comprising a shadow frame provided with an alignment pin in a downward direction at a position corresponding to each of the alignment pin receiving portion.

The bushing is fixed to the lower surface of the vacuum chamber with a bolt or the like, and is characterized in that the receiving portion into which the alignment pin provided in the shadow frame can be inserted.

Referring to the chemical vapor deposition apparatus according to the present invention having the characteristics as described above in more detail with reference to the accompanying drawings as follows.

4 is a schematic cross-sectional view showing a PECVD apparatus to which the present invention is applied.

As shown in FIG. 4, in the vacuum chamber 116 having the gas injection hole 112 and the gas discharge port 114, the diffuser 111 forming the upper electrode and the susceptor 120 forming the lower electrode. ) Are spaced apart from each other at a predetermined interval, RF power for supplying a high frequency is connected to the diffuser 111, and a ground for grounding the RF power is connected to the susceptor 120.

The diffuser 111 serves to control the flow of the reaction gas supplied through the gas inlet 112, and the susceptor 120 supplies thermal energy required for deposition to the substrate 118 to be deposited. It includes a heater, and has a mobility to move the substrate 118 up and down.

The susceptor 120 has a contact region with the substrate 118 and a non-contact region with the substrate 118, and has a hole through which the guide pin 132 passes.

In addition, the upper surface of the substrate 118 surrounds the edge of the substrate 118 so that the shadow frame 130 which functions as a mask during the deposition process is located, the lower surface of the shadow frame 130 is aligned at each corner The pin 131 is provided, and the alignment pin 131 has a structure inserted into the bushing 140 described below.

In addition, the alignment pin 131 may be provided to extend downwardly vertically with respect to the lower surface of each corner of the shadow frame 130 by using a screw or other various methods.

The lower surface of the vacuum chamber 116 is provided with a chamber lower wall 137 along the lower surface of the shadow frame 130, and the alignment pin 131 is inserted into each corner of the chamber lower wall 137. The bushing 140 in which the receiving portion is formed is fixed.

5 is a three-dimensional view of a characteristic portion of the present invention, each corner of the shadow frame 130 is provided with an alignment pin 131, the bushing in the lower portion corresponding to the position where the alignment pin 131 is provided 140 is fixed.

The alignment pins 131 are respectively inserted into the accommodating portion of the bushing 140, and when the susceptor 120 moves upward by the axis elevator 142 to push up the shadow frame 130, the alignment is performed. As the pin 131 slides along the receiving portion of the bushing 140 and moves upward, the shadow frame 130 is always kept in the correct position.

In addition, the present invention is formed in the longitudinal direction so that the receiving portion of the bushing 140, the alignment pin 131 is inserted, the one side is opened and the outside with a uniform width as the diameter of the alignment pin 131 It is characterized by being formed in the longitudinal direction.

6 is a perspective view of the bushing 140 according to the present invention, Figure 7 is a view of the bushing 140 from the top.

As shown in FIG. 6, the bushing 140 has an elongated receiver 140a to allow the alignment pin to be inserted. In general, since the deposition process is performed while the thermal energy is supplied by the heater provided in the susceptor 120, the shadow frame 130 provided on the upper surface of the susceptor 120 is expanded by heat.

When the shadow frame 130 is expanded, the position of the alignment pin 131 changes accordingly, so that the position of the bushing 140 fixed to the lower surface of the vacuum chamber 116 and the position of the alignment pin 131 are Since the alignment pin 131 is not easily inserted, and the alignment pin 131 and the inner wall of the bushing 140 are severely rubbed, fine particles may be generated. It should be formed in consideration of thermal expansion of the shadow frame 130.

Therefore, the accommodating part 140a of the bushing must have a structure in which the alignment pin 131 can be changed in the accommodating part 140a in the thermal expansion direction of the shadow frame 130. As shown in the figure, an opening having a width corresponding to the diameter of the alignment pin 131 is formed at one side of the accommodating part 140a according to the moving direction of the shadow head frame 130.

In addition, the present invention is characterized in that the outside of the bushing 140 is angled shape so that both sides in close contact with the edge portion of the chamber lower wall 137.

As shown in FIG. 7, the outer surface of the bushing 140 has a rectangular shape in which one open side of the accommodating portion 140a is cut out, and both surfaces thereof are formed to contact the lower chamber wall 137. Conventionally, fixing members were configured at each corner to fix the position of the chamber lower wall 137, but in the present invention, the bushing 140 is fixed to the lower support surface of the vacuum chamber, and both sides of the bushing are chamber lower wall. In contact with both sides of the corner portion of the (137) also serves to fix the position of the chamber lower wall (137).

In addition, the height of the lower chamber wall 137 is equal to the height of the bushing 140 to accommodate the alignment pin 131 and to perform the position fixing function of the lower chamber wall 137 more appropriately. When the height of the lower chamber wall 137 and the bushing 140 is the same, the susceptor 120 is supported by the bushing 140 as well as the lower chamber wall 137 in the substrate loading state, thereby having a more stable support structure.

In addition, the present invention aligns the position of the shadow frame 130 while the alignment pin 131 slides a portion inserted into the accommodating part 140a of the bushing when the susceptor 120 moves up and down. It features.

That is, in order to maintain the correct position of the shadow frame 130 as described above, the position alignment of the shadow frame 130 is made based on the bushing 140 fixed to the lower support surface of the vacuum chamber 116. The alignment pin 131 is inserted into the accommodating part 140a of the bushing so that the alignment pin 131 slides along the inner surface of the accommodating part 140a of the bushing when the shadow frame 130 moves up and down. Ensure that the shadow frame 130 always maintains the correct position.

And, the present invention is characterized in that the bushing 140 is fixed to the lower surface of the vacuum chamber 116 by using a screw.

As shown in FIG. 6, the lower one side of the bushing 140 has a through hole 140b for fastening a screw directly from the top to the bottom thereof, thereby penetrating the through hole 140b of the bushing 140. The screw is fastened to the lower surface of the vacuum chamber to form a structure in which the bushing 140 is fixed to the lower surface of the vacuum chamber.

And, the present invention is characterized in that the alignment pin 131 is provided shorter than the depth of the receiving portion (140a) of the bushing.

The alignment pin 131 is inserted into the receiving portion 140a of the bushing so that the alignment pin 131 performs only the alignment of the shadow frame 130, not the function of supporting the shadow frame 130. If so, the length of the alignment pin 131 should be shorter than the depth of the accommodating portion 140a of the bushing because the shadow frame 130 should not be supported by touching the bottom surface of the accommodating portion 140a of the bushing. .

That is, the shadow frame 120 is supported by the lower chamber wall 137 or, if moved to the upper by the susceptor 120, must be supported by the susceptor 120 and to the alignment pin 131 Do not support it. This is to maintain the accuracy of the alignment of the alignment pin 130.

Hereinafter, the structure of aligning the shadow frame 130 in the chamber in the present invention will be described in detail.

8A and 8B illustrate a step-by-step structure in which the alignment of the shadow frame is performed according to the movement position of the susceptor in the deposition process.

FIG. 8A shows the susceptor 120 in an unleading state after loading of the substrate 118, showing the stage in which the shadow frame 130 is initially supported by the chamber lower wall 137. .

As shown, a pin plate 132 is formed at a lower portion of the susceptor 120 to be spaced apart from the susceptor 120 at a predetermined interval, and a central portion between the pin plate 132 and the susceptor 120 is provided. The support shaft elevator 142 which moves the susceptor 120 up and down is located.

A shadow frame 130 is positioned along an edge of the substrate 118 disposed on the upper surface of the susceptor 120, and the alignment pin 131 formed on the lower surface of the shadow frame 130 is a lower support surface of the vacuum chamber. It is inserted into the receiving portion 140a of the bushing 140 fixed to.

That is, in this step, by aligning the alignment pin 131 provided in the shadow frame 130 to the receiving portion 140a of the bushing 140, the shadow frame is positioned at a constant position in the vacuum chamber in the primary position. Can be fixed on the

Then, as the length elevator 142 length increases in the upward direction, the susceptor 120 loaded with the substrate 118 is moved upward.

In this case, since the alignment pin 131 provided on the lower surface of the shadow frame 130 is inserted at a predetermined interval in the receiving portion 140a of the bushing 140, the shadow frame 130 may be moved even when the susceptor 120 moves. ) Will maintain a constant position.

8b shows the step of moving the susceptor 120 to the deposition position.

In this step, when the shadow frame 130 is raised by the lifting force of the susceptor 120, the alignment pin 131 slides along the inner surface of the accommodating portion 140a of the bushing to simultaneously lift the shadow frame 130. 130 is spaced apart from the chamber lower wall 137 and the bushing 140 by a predetermined distance, the substrate non-contact area of the susceptor 120 and the lower surface of the shadow frame 130 is in contact, the edge of the substrate 118 The portion is covered in the area by the shadow frame 130.

At this time, even when the shadow frame 130 and the susceptor 120 are in contact with each other due to the upward force of the susceptor 120, the shadow frame 130 has an alignment pin 131 at the receiving portion of the bushing 140 from initial loading. Since it is moved in the inserted state, the possibility of misalignment can be minimized, so that the part in contact with the substrate 118 of the shadow frame 130 can be prevented from being lifted, and the shadow frame 130 and the substrate 118 are removed. It is possible to make accurate contact.

In addition, the present invention includes the vacuum chamber 116, the susceptor 120, the chamber lower wall 137, and the shadow frame 130 in the manufacturing method of chemical vapor deposition equipment comprising the shadow, the shadow Installing an alignment pin 131 at an edge of the frame 130, measuring thermal expansion in a long side direction and a short side direction of the shadow frame 130, and aligning according to thermal expansion of the shadow frame 130. Estimating a moving direction of the fin 131, forming an accommodating part 140a of the bushing so that the alignment pin 131 may move in response to the predicted moving direction, and the chamber lower wall 137. And installing the bushing 140 at a position corresponding to the alignment pin 131 at an inner edge of the insert, and inserting the alignment pin 131 into the accommodating portion 140a of the bushing. It provides a method for producing a chemical vapor deposition equipment to be performed.

As described above, since the deposition process is generally performed while the heat energy is supplied by the heater provided in the susceptor 120, the shadow frame 130 provided on the upper surface of the susceptor 120 is expanded by heat.

Therefore, the accommodating part 140a of the bushing must have a structure in which the alignment pin 131 can be changed in the accommodating part 140a in the thermal expansion direction of the shadow frame 130. As shown in the figure, an opening having a width corresponding to the diameter of the alignment pin 131 is formed at one side of the accommodating part 140a according to the moving direction of the shadow frame 130.

FIG. 9 is a view of the shadow frame 130 according to the present invention from an upper surface thereof, and FIG. 10 is a diagram relating to a relationship between thermal expansion lengths in long and short sides.

Hereinafter, the method of manufacturing the chemical vapor deposition apparatus will be described in more detail.

As a first step, in order to determine the direction in which the alignment pin 131 is provided in the shadow frame 130 and the opening of the bushing accommodating part 140a is formed, the long side direction l of the shadow frame 130 and The length of thermal expansion in the short direction (d) shall be measured.

As a second step, the slope of the thermal expansion length in the short side direction d with respect to the thermal expansion length in the long side direction l is represented as a coordinate to determine the movement direction of the alignment pin 131 according to the thermal expansion of the shadow frame 130. Predict.

A line shown vertically in FIG. 10 represents a thermal expansion length D in the short side direction, and a line shown horizontally represents a thermal expansion length L in the long side direction. As shown, the arrow indicated by the sum vector between the horizontal line and the vertical line indicates the length of thermal expansion of the entire shadow frame 130 and the direction of the arrow indicates the direction in which the thermal expansion occurs, and the direction of the arrow is the shadow frame. The alignment direction of the alignment pin 131 may be predicted due to thermal expansion of the 130. In addition, 1/2 of the length of the arrow is the movement distance of the alignment pin 131 due to thermal expansion at each corner.

As a third step, an opening formed in the bushing accommodating part 140a is precisely formed in accordance with the width of the alignment pin 131 corresponding to the predicted movement direction, thereby forming an alignment structure in consideration of thermal expansion of the shadow frame.

Subsequently, a bushing 140 is installed at a position corresponding to the alignment pin 131 at the inner edge of the lower chamber wall 137, and the bushing 140 is provided in the shadow frame 130 at the receiving portion 140a of the bushing. The chemical vapor deposition equipment is manufactured by inserting the pin 131.

Here, the step of predicting the moving direction of the alignment pin 131 uses the slope of the thermal expansion length (D) in the short side direction with respect to the thermal expansion length (L) in the long side direction. That is, as described above, the direction according to the inclination of the arrow in FIG. 10 is the moving direction of the alignment pin 131 due to thermal expansion.

More specifically, the direction of the arrow in FIG. 10 is the direction of movement of the alignment pin 131 in the upper left side of the shadow frame 130 in FIG. The direction is the upper right side, and the direction in which the arrow direction is symmetrical to the horizontal axis is the movement direction of the alignment pin 131 due to thermal expansion in the lower left side.

In addition, in manufacturing the chemical vapor deposition apparatus, the length of the alignment pin 131 should be shorter than the depth of the receiving portion 140a of the bushing, through which the shadow frame 130 by the alignment pin 131 Prevent support. That is, the alignment pin 131 performs only a function for aligning the position of the shadow frame 130.

The alignment structure of the shadow frame 130 has been described in detail with reference to specific embodiments of the present invention.

However, the present invention is not limited to the above embodiment and can be implemented in various modifications within the scope not departing from the spirit of the present invention, the alignment structure of the shadow frame 130 according to the present invention is not only PECVD apparatus but also other It is also applicable to the shadow frame of the deposition apparatus of the kind.

As described above, the chemical vapor deposition apparatus and its manufacturing method according to the present invention can obtain the following effects.

First, since the alignment pin in the present invention is always inserted into the receiving portion of the bushing, the alignment pin is slid to prevent mechanical shock generated during misalignment, thereby providing a more stable structure.

Second, even when the shadow frame is inflated by heat, an opening through which the alignment pin is moved is formed in the accommodating portion of the bushing, thereby achieving accurate alignment even when thermal deformation occurs.

Third, the shadow frame is stably fixed on the substrate to prevent misalignment and to align with thermal expansion, thereby preventing plasma leakage and improving the yield of the substrate. Can be.

Claims (10)

A vacuum chamber having a gas inlet and an exhaust port; A susceptor positioned in the vacuum chamber, the substrate being loaded and movable up and down; A chamber lower wall surrounding the periphery of the susceptor; A bushing provided at a lower portion of the vacuum chamber at an edge of the lower wall of the chamber and having an accommodation portion into which an alignment pin is inserted; And a shadow frame covering an edge of the substrate loaded on the susceptor and having an alignment pin elongated downward in a position corresponding to the alignment pin receiving portion. The method of claim 1, Receiving portion of the bushing is formed in the longitudinal direction so that the alignment pin, the chemical vapor deposition equipment, characterized in that the one side is formed in the longitudinal direction with the outside and the opening portion in a uniform width as the diameter of the alignment pin. The method of claim 1, The outside of the bushing is a chemical vapor deposition equipment, characterized in that the angled shape so that both sides in close contact with the edge of the chamber lower wall. The method of claim 1, The height of the bushing is chemical vapor deposition equipment, characterized in that the same as the height of the chamber lower wall. The method of claim 1, The alignment pin is a chemical vapor deposition apparatus for aligning the position of the shadow frame while sliding the portion inserted into the receiving portion of the bushing when the susceptor moves up and down. The method of claim 1, The bushing is chemical vapor deposition equipment, characterized in that fixed to the lower surface of the vacuum chamber using a screw. The method of claim 1, The alignment pin is a chemical vapor deposition apparatus, characterized in that provided shorter than the depth of the receiving portion of the bushing. A vacuum chamber having a gas inlet and an exhaust port, a susceptor positioned inside the vacuum chamber, the substrate being loaded and movable in a vertical direction, a chamber lower wall configured to surround the susceptor, and an edge of the substrate; In the method of manufacturing a chemical vapor deposition apparatus comprising a shadow frame is configured, Installing an alignment pin at the edge of the shadow frame; Measuring thermal expansion in a long side direction and a short side direction of the shadow frame; Predicting a moving direction of an alignment pin according to thermal expansion of the shadow frame; Forming an accommodating portion of the bushing to move the alignment pin in correspondence with the predicted movement direction; Installing the bushing at a position corresponding to the alignment pin at an inner edge of the lower chamber wall; And inserting the aligning pins into the receiving portion of the bushing. The method of claim 8, The forming of the accommodating part of the bushing may include forming the accommodating part of the bushing in an inclination direction of the thermal expansion length in the short side direction with respect to the thermal expansion length in the long side direction. The method of claim 8, The first step is a method of manufacturing a chemical vapor deposition apparatus, characterized in that the step of installing the alignment pin is made to be made shorter than the depth of the bushing receiving portion.