KR100786275B1 - Chemical Vapor Deposition Apparatus for Flat Display - Google Patents

Abstract

A chemical vapor deposition apparatus for planar displays is disclosed. Chemical vapor deposition apparatus for a flat panel display of the present invention, the chamber for forming a deposition space in which the deposition process for the flat display proceeds; A process gas injector formed on the sidewall of the chamber and injecting the process gas into the chamber from the side; And an electrode coupled to the upper region in the chamber and having a plurality of hollow portions formed on a lower surface thereof toward the flat display, thereby plasmating the process gas by a hollow cathode discharge based on an applied RF power. It is characterized by including. According to the present invention, instead of using a gas distribution plate, the structural structure of the electrode and the process gas injection direction are structurally improved, thereby eliminating general problems caused by using the gas distribution plate while maintaining the deposition efficiency for the flat display. can do.

Flat panel display, LCD, CVD, chamber, electrode, hollow part, electric discharge machining, gas distribution plate

Description

Chemical Vapor Deposition Apparatus for Flat Displays {Chemical Vapor Deposition Apparatus for Flat Display}

1 is a schematic structural diagram of a chemical vapor deposition apparatus for a planar display according to a first embodiment of the present invention.

FIG. 2 is a rear perspective view of the electrode shown in FIG. 1.

3 is a cross-sectional view of FIG. 2.

4 is a rear perspective view of an electrode of a chemical vapor deposition apparatus for a planar display according to a second embodiment of the present invention.

5 is a cross-sectional view of FIG. 4.

6 is a cross-sectional view of an electrode of a chemical vapor deposition apparatus for a planar display according to a third embodiment of the present invention.

* Explanation of symbols for the main parts of the drawings

10 chamber 11 bottom surface

12 gas diffusion plate 14 chamber upper wall

30: susceptor 31: substrate loading portion

40: susceptor support 50, 50a, 50b: electrode

51: upper surface 52: lower surface

53: edge portion 54, 54a, 54b: hollow portion

55: protrusion protrusion 60: process gas injection unit

The present invention relates to a chemical vapor deposition apparatus for a flat panel display, and more particularly, the deposition efficiency of the flat display is maintained by structurally improving the structure of the electrode and the injection direction of the process gas instead of using a gas distribution plate. The present invention relates to a chemical vapor deposition apparatus for a flat panel display which can solve general problems caused by using a gas distribution plate.

Flat panel displays are widely used in personal handheld terminals, as well as in TVs and computers.

Such flat displays include liquid crystal displays (LCDs), plasma display panels (PDPs), and organic light emitting diodes (OLEDs).

Among them, liquid crystal display (LCD) injects a liquid crystal, which is an intermediate between solid and liquid, between two thin upper and lower glass substrates, and generates light and shade by changing the arrangement of liquid crystal molecules by the electrode voltage difference between the upper and lower glass substrates. It is a device using a kind of optical switch phenomenon to display an image.

LCDs are now widely used in electronic clocks, electronic calculators, TVs, notebook PCs, electronic products, automobiles, aircraft speed displays and driving systems.

Previously, LCD TVs have a size of about 20 to 30 inches, and monitors have a mainstream size of 17 inches or less. In recent years, however, the preference for large TVs of 40 inches or larger and large monitors of 20 inches or larger has increased.

Therefore, manufacturers of LCDs have come to produce wider glass substrates. Currently, research is being conducted to increase the size of glass substrates to the 7th generation having a width of 1950 × 2250 mm or 1870 × 2200 mm, or the 8th generation having more than 2200 × 2500 mm.

LCD is a TFT process in which processes such as deposition, photo lithography, etching, chemical vapor deposition, etc. are repeatedly performed, a cell process for bonding upper and lower glass substrates, and an apparatus It is released as a product through the completed module process.

On the other hand, the chemical vapor deposition process (Chemical Vapor Deposition Process) is a process of depositing a process gas, which is a deposition material having a high energy by plasma by an external high frequency power source, onto a glass substrate.

Conventional chemical vapor deposition apparatus for performing such a deposition process, the chamber having a susceptor to which the glass substrate is loaded (Loaded), the electrode provided in the chamber, provided in the lower portion of the electrode and serves as a gas inlet A gas distribution plate is provided.

The gas distribution plate is arranged to be spaced apart from the ground electrode by a predetermined distance so that a buffer space is formed between the gas distribution plate and the ground electrode. On the plate surface of the gas distribution plate, a plurality of gas holes of minute size are formed through. It is known that about 100,000 gas holes are formed in a gas distribution plate installed in a chemical vapor deposition apparatus for depositing a glass substrate of 8th generation size.

With this configuration, when the deposition process proceeds, the process gas is injected downward through the electrode at the top of the chamber, then diffused through the buffer space, and then ejected through a plurality of gas holes formed in the gas distribution plate. A vapor deposition film can be formed on it.

By the way, in the conventional chemical vapor deposition apparatus, not only is it not easy to process gas holes in the gas distribution plate, but also the number is large, it takes a lot of time to produce the gas distribution plate and the manufacturing cost is high, and the gas hole processing Due to this there is a general problem that the mechanical strength of the gas distribution plate is reduced.

In addition, in the case of the conventional chemical vapor deposition apparatus must use a gas distribution plate, due to this must have a structure in which the process gas is injected from the top, there is a problem that the upper structure of the chamber must be complicated.

Therefore, there is a need for a new method for efficiently depositing glass substrates without using gas distribution plates, which are difficult and costly in gas hole processing.

The object of the present invention is to improve the structure of the electrode and the injection direction of the process gas instead of using a gas distribution plate, thereby maintaining the deposition efficiency for the flat panel display while maintaining the overall efficiency of the problem caused by using the gas distribution plate It is to provide a chemical vapor deposition apparatus for a flat panel display that can eliminate.

The above object is, according to the present invention, a chamber for forming a deposition space in which a deposition process for a flat display proceeds; A process gas injector formed on the sidewall of the chamber and injecting a process gas into the chamber from a side thereof; And a plurality of hollow portions formed at a lower surface of the chamber toward the upper region of the chamber, the plasma having the process gas by a hollow cathode discharge based on a predetermined RF power applied thereto. It is achieved by a chemical vapor deposition apparatus for a flat panel display, characterized in that it comprises an electrode to be converted.

Here, the chamber may further include a chamber upper wall coupled to the upper portion of the chamber, the process gas injection unit may be formed on the side wall of the chamber upper wall at a position adjacent to the lower surface of the electrode.

The process gas injection units may be formed on sidewalls in the circumferential direction of the upper wall of the chamber, and the process gas may be injected in a square symmetry by the plurality of process gas injection units.

The RF power supply unit may further include a high frequency power supply unit coupled to an upper portion of the chamber, and RF power from the high frequency power supply unit may be directly applied to an upper surface of the electrode.

The plurality of hollow parts may be formed such that the depth of depression is gradually deepened so that the contact area with the process gas increases in the circumferential direction from the center region of the electrode.

The plurality of hollow parts may have any one of a polygonal bone shape, a circular groove shape, and a polygonal groove shape.

A lower surface of the electrode on which the plurality of hollow parts is formed may form a concave surface.

A lower edge portion of the electrode on which the plurality of hollow portions is formed may be formed along the circumferential direction.

A gas diffusion plate may be further provided on the bottom surface of the chamber to diffuse the process gas existing in the deposition space.

The flat panel display may be a large glass substrate for a liquid crystal display (LCD).

Hereinafter, with reference to the accompanying drawings will be described in detail for each embodiment of the present invention. In the description, the same reference numerals are given to the same components.

As described above, the flat panel display described below may be any of liquid crystal display (LCD), plasma display panel (PDP), and organic light emitting diodes (OLED).

However, in the present embodiment, a large glass substrate for liquid crystal display (LCD) will be regarded as a flat display. As described above, the large size refers to the size of the level applied to the 7th generation or the 8th generation or more.

1 is a schematic structural diagram of a chemical vapor deposition apparatus for a planar display according to a first embodiment of the present invention, FIG. 2 is a rear perspective view of the electrode shown in FIG. 1, and FIG. 3 is a cross-sectional view of FIG.

Referring to these drawings but mainly referring to FIG. 1, a planar display chemical vapor deposition apparatus 1 according to a first embodiment of the present invention includes a chamber 10 and a glass substrate to be deposited within the chamber 10. (G) is loaded on the susceptor 30, a plurality of susceptor support 40 for supporting the susceptor 30 in the lower portion of the susceptor 30, coupled to the upper portion of the chamber 10 Chamber 14 to form an upper portion of chamber 10, an electrode 50 coupled to chamber upper wall 14, and a chamber coupled to an upper portion of chamber 10 to form an upper portion of chamber 10. The upper wall 14 and the process gas injecting part 60 which is formed in the chamber upper wall 14 and injects a process gas from the side surface of the chamber 10 is provided.

In the chamber 10, the outer wall is shielded from the outside so that the deposition space S therein can be maintained in a vacuum atmosphere. The deposition space S of the chamber 10 is filled with a reactive process gas during the deposition process.

The outer wall of the chamber 10 is formed with an opening (not shown), which is a passage through which the glass substrate G flows in and out of the chamber 10 by a predetermined working robot. Although not shown, the opening is selectively opened and closed by a door (not shown). In the center region of the bottom surface 11 in the chamber 10, a through hole 10b through which the center rod 32 of the susceptor 30 penetrates is formed. An additional through hole 10c through which the shaft portion 42 of the susceptor support 40 penetrates is further formed around the through hole 10b.

The susceptor 30 has a substrate loading part 31 for supporting a glass substrate G loaded in a transverse direction in the deposition space S in the chamber 10, and an upper end thereof is the center of the substrate loading part 31. The center rod 32 is fixed to the lower end and is disposed outside the chamber 10 through the through hole 10b. Center rod 32 is formed of a tubular body, it is disposed to penetrate the interior of the elevating module 36 to be described later. The center rod 32 may be integrally formed with the substrate loading portion 31 or may be manufactured separately and coupled to the substrate loading portion 31.

The upper surface of the substrate loading portion 31 is made of almost a plate so that the glass substrate G can be loaded in a precise horizontal state. A heater (not shown) is mounted inside the substrate loading unit 31 to heat the substrate loading unit 31 to a predetermined deposition temperature of approximately 400 ° C.

The susceptor 30 moves up and down in the deposition space S in the chamber 10. That is, when the glass substrate G is loaded, the glass substrate G is disposed in the bottom surface 11 region of the chamber 10, and when the glass substrate G is loaded and the deposition process is performed, the glass substrate G is a gas distribution plate ( 17) Injury so as to be adjacent to. During the deposition process, the substrate loading portion 31 of the susceptor 30 floats on the lower surface of the gas distribution plate 17 to an interval of about several tens of millimeters (mm).

To this end, a lifting module 36 for elevating the susceptor 30 is provided at the center rod 32 of the susceptor 30. The susceptor 30 and the susceptor support 40 are elevated together by the lifting module 36. Of course, the susceptor 30 and the susceptor support 40 may be configured to be independently lifted by the lifting module 36.

The space between the center rod 32 and the through hole 10b of the susceptor 30 should not be generated while the susceptor 30 moves up and down. Thus, a bellows pipe 34 is provided around the through hole 10b to surround the outside of the center rod 32. The bellows pipe 34 is expanded when the susceptor 30 descends and is compressed when the susceptor 30 rises to prevent the space between the center rod 32 and the through hole 10b.

Inside the bellows pipe 34, a ceramic pillar 33 is further provided to support the substrate loading portion 31 of the susceptor 30. The ceramic pillar 33 serves to support the substrate loading part 31 of the susceptor 30 together with the susceptor support 40. The upper end of the ceramic pillar 33 is bent to support the lower surface of the substrate loading unit 31, and the lower end is coupled to the elevating module 36 in the bent state.

The substrate loading part 31 of the susceptor 30 is provided with a plurality of lift pins 38 which reliably support the lower surface of the glass substrate G loaded or taken out to guide the upper surface of the substrate loading part 31. . The lift pin 38 is provided to penetrate the substrate loading portion 31.

When the susceptor 30 is lowered by the elevating module 36, the lift pin 38 is pressed to the bottom 11 of the chamber 10 so that the top thereof is the top surface of the substrate loading part 31. It protrudes. Thus, the glass substrate G is spaced apart from the substrate loading part 31. On the contrary, when the susceptor 30 floats, the susceptor 30 moves downward to bring the glass substrate G into close contact with the upper surface of the substrate loading part 31.

The lift pin 38 is disposed between the glass substrate G and the substrate loading portion 31 so that the robot arm (not shown) can grip the glass substrate G loaded on the substrate loading portion 31 of the susceptor 30. It also serves to form a space.

As described above, the susceptor 30 under 7th generation or 8th generation may have a large weight and a relatively large size, which may cause sag. In this case, the susceptor 30 may also sag in the glass substrate G.

Thus, as shown, a plurality of susceptor support 40 is provided below the substrate loading portion 31 of the susceptor 30 to support the substrate loading portion 31 of the susceptor 30. Since the substrate loading part 31 is formed to be larger than the size of the large glass substrate G, sagging occurs seriously toward the radially outer side from the center center rod 32.

Therefore, the susceptor support 40 is provided in plurality in the outer region of the substrate loading part 31 of the susceptor 30 to prevent the substrate loading part 31 of the susceptor 30 from sagging.

The susceptor support 40 is disposed in parallel with the head 41 positioned on the lower surface of the substrate loading portion 31 and the center rod 32 of the susceptor 30 extending from the head 41. It has a shaft portion 42.

The end of the shaft portion 42 is integrally coupled to the elevating module 36 similarly to the center rod 32. Therefore, when the lifting module 36 operates, the susceptor support 40 also moves up and down with the susceptor 30. A bellows pipe 34a is also formed in the region of the shaft portion 42.

On the other hand, as described above, the planar display chemical vapor deposition apparatus 1 of this embodiment is not provided with a gas distribution plate (not shown) for distributing a process gas of a predetermined deposition material (reactive gas, which is a silicon-based compound). not. Instead of the gas distribution plate, the structure of the electrode 50 and the injection direction of the process gas are structurally improved to achieve the same deposition process.

The electrode 50 is coupled to the upper region of the chamber 10, more specifically to the chamber top wall 14. At this time, an insulator 26 is further provided between the chamber upper wall 14 and the electrode 50 to prevent the electrode 50 from directly contacting and energizing the chamber upper wall 14. The insulator 26 may be made of Teflon or the like.

The electrode 50 serves to change the process gas injected into the chamber 10 into the plasma by the side of a hollow cathode discharge based on a predetermined RF power applied to the plasma.

At this time, RF (RF) power applied to the electrode 50 is in charge of the high frequency power supply unit 20 provided in the upper region of the chamber upper wall 14. That is, the high frequency power supply unit 20 is connected to the upper surface of the electrode 50 by the connection line 22 to directly apply a predetermined RF (RF) power to the electrode 50 during the deposition process.

2 and 3, the electrode 50 has a substantially hexahedral structure. As described above, the upper surface 51 is connected to the high frequency power supply unit 20 by the connection line 22, and a plurality of hollow portions 54 to be described later are formed on the lower surface 52.

The lower surface 52 of the electrode 50 having the plurality of hollow portions 54 is formed with an edge portion 53 in which the hollow portions 54 are not formed along the circumferential direction thereof. The edge portion 53 is used as a portion supported by the chamber upper wall 14 by the insulator 26. Of course, if necessary, the edge portion 53 may be excluded in construction.

The lower surface 52 of the electrode 50 not only forms a concave surface, but a plurality of hollow portions 54 are formed. The lower surface 52 and the plurality of hollow portions 54 as concave surfaces serve to enable hollow cathode discharge. Hollow cathode discharge refers to a phenomenon in which a current flows through a plurality of hollow portions 54 which are cut like grooves and are discharged.

The hollow part 54 may be manufactured to be naturally formed between the plurality of protrusions 55 by forming the plurality of protrusions 55 protruding from the plate surface by milling the lower surface 52 of the electrode 50. have. The hollow portion 54 formed in this way has a substantially rectangular valley shape. However, depending on the method of milling, the shape of the hollow portion 54 may be changed from rectangular to various polygonal shapes.

After the hollow part 54 is formed by milling, the lower surface 52 of the electrode 50 is concavely processed by using a predetermined ball end mill process. As will be described later, the reason for forming the lower surface 52 of the electrode 50 to be concave is to process different depths of depression for the hollow portions 54.

Therefore, if the depth of depression to the hollow part 54 was processed differently from the beginning, it is not necessary to make the lower surface 52 of the electrode 50 concave. However, since it is not easy to process the depression depth with respect to the hollow part 54 one by one, first, the hollow parts 54 are made to the same depth on the bottom surface 52 of the electrode 50, and then the bottom surface of the electrode 50 is formed. By concave post-processing 52, the recessed depth with respect to the hollow part 54 may differ from each other.

Of course, depending on the processing method, the lower surface 52 of the electrode 50 may be first formed concave, and then the hollow portion 54 may be formed on the surface.

In any case, when the lower surface 52 of the electrode 50 is concave and a plurality of hollow portions 54 are formed on the surface, the plurality of hollow portions 54 moves from the center region to the edge portion 53. Gradually, the depth of depression deepens. Therefore, the process gas is more in contact with the hollow portion 54 positioned in the edge portion 53 region than the hollow portion 54 positioned in the center region of the lower surface 52 of the electrode 50.

For reference, the power applied to the electrode 50 by the high frequency power supply unit 20 has a frequency of approximately 10 MHz to 100 MHz, and the RF 50 is applied to the electrode 50 by RF power applied to the electrode 50. A predetermined plasma is generated by the process gas in the lower surface 52 region.

Since the generated plasma has the highest density at the center of the lower surface 52 of the electrode 50 and gradually decreases toward the outer side of the electrode 50, it is necessary to increase the contact area with the process gas outside the lower surface 52 of the electrode 50. There is. Accordingly, in the present embodiment, a plurality of hollow portions 54 are formed to gradually deepen the depth of depression toward the edge portion 53 in the center region.

Since the hollow part 54 can be implemented by various processing methods in addition to the above-described method, processing is much easier than processing a large number of gas holes in a conventional gas distribution plate. In particular, the time, effort, and cost are much reduced compared to the gas hole processing formed in the conventional gas distribution plate. In addition, the hollow portion 54 may reduce the weight of the electrode 50 to prevent the electrode 50 from sagging, and also has the advantage that the mechanical strength is rather high.

In addition to improving the structure of the electrode 50, in the present embodiment, the position of the process gas injection portion 60 is changed. In the conventional case, the process gas was injected from above, but in the present embodiment, the process gas is injected from the side.

To this end, the process gas injection unit 60 is formed on the chamber upper wall 14 coupled to the upper portion of the chamber 10. The process gas injection unit 60 is disposed on the sidewall of the chamber upper wall 14 at a position adjacent to the lower surface 52 of the electrode 50.

The chamber upper wall 14 is composed of four sidewalls, and process gas injection units 60 are formed at each sidewall. Of course, one process gas injection unit 60 may be formed on one sidewall, or a plurality of process gas injection units 60 may be formed on one sidewall. In this case, since the process gas injected into the deposition space 10a in the chamber 10 may be injected in a square symmetry by the plurality of process gas injection units 60, uniformity may be improved.

Meanwhile, in the present embodiment, since the process gas is injected from the side, the gas diffusion plate 12 (see FIG. 1) for diffusing the process gas existing in the deposition space 10a into the bottom surface 11 of the chamber 10. It is preferable that this is further provided.

The operation of the chemical vapor deposition apparatus 1 for a flat panel display having such a configuration and the effects thereof will be described as follows.

First, the glass substrate G to be transported by the robot arm is brought in while the susceptor 30 and the susceptor support 40 are lowered to the lower region of the chamber 10 by the elevating module 36. And is disposed on the substrate loading portion 31 of the susceptor 30.

At this time, since the upper end of the lift pin 38 is protruded a predetermined height to the upper surface of the substrate loading portion 31, the robot arm is taken out after placing the glass substrate (G) on the lift pins (38). When the robot arm is taken out, the inside of the chamber 10 is maintained in a vacuum atmosphere and filled with a reactive gas required for deposition.

Next, in order to proceed with the deposition process, the elevating module 36 is operated to raise the susceptor 30 and the susceptor support 40 together. The lift pin 38 is then lowered, through which the glass substrate G is loaded while being in close contact with the upper surface of the substrate loading part 31. When the susceptor 30 rises, the operation of the elevating module 36 is stopped, and the glass substrate G is positioned directly below the electrode 50. At this time, the susceptor 30 is heated to about 400 ° C.

Then, the process gas begins to be injected into the chamber 10 by the plurality of process gas injectors 60, and RF power is applied to the electrode 50 through the high frequency power source 20. As a result, a predetermined plasma is generated by the process gas in the region of the lower surface 52 of the electrode 50. Of course, plasma may be uniformly generated in the region of the lower surface 52 of the electrode 50 due to the structural features of the hollow portions 54 formed on the lower surface 52 of the electrode 50.

The plasma generated in this way may be deposited on the glass substrate G by reaching the glass substrate G.

As such, according to the present invention, even if the gas distribution plate is not used as in the prior art, the structure of the electrode 50 and the injection direction of the process gas are structurally improved, thereby maintaining the deposition efficiency for the glass substrate G while maintaining the gas as it is. General problems arising from the use of the distribution plate, for example, not only is it difficult to process gas holes in the gas distribution plate, but also the number of them increases the time and cost, and the gas hole processing mechanism The overall strength is reduced, and various problems such as complicated structure of the upper structure of the chamber 10 can be solved.

In addition, the existing gas distribution plate played the role of gas injection and RF (RF) electrode at the same time, but by removing the gas distribution plate and having only the electrode 50 to serve as a simple electrode simply because only the hollow portion 54 to be formed The rest can be kept intact. Therefore, since the effect of reducing the weight compared to the original plate also has the effect of preventing the electrode 50 from being cut due to its own weight.

Therefore, the structure of the electrode 50 is simplified, so that the processing is easy and the processing time is short, the mechanical strength of the electrode 50 is increased to a large width (for example, 20% or more) compared to the existing structure, and the side of the process gas The effect that the implant simplifies the upper structure of the chamber 10 in which the electrode 50 is located can be expected.

4 is a rear perspective view of an electrode of a chemical vapor deposition apparatus for a planar display according to a second embodiment of the present invention, and FIG. 5 is a cross-sectional view of FIG.

In the first embodiment described above, the protrusions 55 are formed by the milling process, and the hollow portion 54 may be naturally formed between the protrusions 55.

However, in the present embodiment, the hollow portion 54a is formed by digging the lower surface 52 of the electrode 50a by a predetermined depth. The hollow portion 54a can be easily formed through a method such as electric discharge machining or bowling.

Also in this embodiment, after forming the hollow part 54a in the lower surface 52 of the electrode 50a, the lower surface 52 of the electrode 50a may be concave, or first, the lower surface of the electrode 50a The hollow portion 54a may be formed after the 52 is recessed.

The hollow portion 54a formed in this manner takes the shape of a substantially circular groove, and as in the first embodiment, the depth of depression becomes gradually deeper toward the outside from the center region of the lower surface 52 of the electrode 50a. have.

6 is a cross-sectional view of an electrode of a chemical vapor deposition apparatus for a planar display according to a third embodiment of the present invention.

Referring to this figure, in this embodiment, the hollow portion 54b is formed in a polygonal groove shape, specifically, a trapezoidal shape. Even if the hollow portion 54b is formed in the shape of a trapezoidal groove on the lower surface 52 of the electrode 50b as in the third embodiment, there is no problem in providing the effect of the present invention.

As described above, the present invention is not limited to the described embodiments, and various modifications and changes can be made without departing from the spirit and scope of the present invention, which will be apparent to those skilled in the art. Therefore, such modifications or variations will have to be belong to the claims of the present invention.

As described above, according to the present invention, by using the gas distribution plate while maintaining the deposition efficiency for the flat display by structurally improving the structure of the electrode and the injection direction of the process gas instead of using the gas distribution plate It can solve all kinds of problems.

Claims (10)

A chamber forming a deposition space in which a deposition process for a flat panel display is performed; A process gas injector formed on the sidewall of the chamber and injecting a process gas into the chamber from a side thereof; And Coupled to an upper region within the chamber, a plurality of hollows are formed on a lower surface of the chamber toward the planar display, thereby plasmating the process gas by a hollow cathode discharge based on a predetermined RF power applied thereto. An electrode, And the hollow parts are formed such that the depth of depression is gradually deepened so as to increase the contact area with the process gas toward the circumferential direction in the central region of the electrode. The method of claim 1, Further comprising a chamber upper wall coupled to the upper portion of the chamber, And the process gas injector is formed on the sidewall of the upper wall of the chamber at a position adjacent to the lower surface of the electrode. The method of claim 2, The process gas injection unit is formed on the side wall in the circumferential direction of the chamber upper wall, respectively, wherein the process gas is injected by the plurality of process gas injection unit in a square symmetry, characterized in that the chemical vapor deposition apparatus for a flat display. The method of claim 1, Further comprising a high frequency power supply unit coupled to the upper portion of the chamber, RF power from the high frequency power supply unit is directly applied to the upper surface of the electrode chemical vapor deposition apparatus for a flat display. delete The method of claim 1, And a plurality of hollow portions having any one of a circular groove shape and a polygonal groove shape. The method of claim 1, And a bottom surface of the electrode on which the plurality of hollow portions are formed to form a concave surface. The method of claim 1, The lower surface of the electrode formed with the plurality of hollow portion is a chemical vapor deposition apparatus for a flat display, characterized in that the edge portion is not formed in the circumferential direction is formed. The method of claim 1, And a gas diffusion plate for diffusing a process gas existing in the deposition space on the bottom surface of the chamber. The method of claim 1, The planar display is a chemical vapor deposition apparatus for a flat panel display, characterized in that the large glass substrate for liquid crystal display (LCD).

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