KR100857807B1 - Chemical vapor deposition apparatus for flat display - Google Patents

Abstract

A chemical vapor deposition apparatus for a flat panel display is provided to prevent damage of a gas inflow pipe by preventing parasitic plasma from being generated within a gas feed-through pipe, and improve a process yield by preventing generation of particles. In a chamber, a deposition process for a flat panel display is performed. A gas inflow pipe(33) flows process gas for the deposition process into the chamber. A gas feed-through pipe(31) is connected with the gas inflow pipe and transfers the process gas to the gas inflow pipe. A parasitic plasma generation preventing unit(34) is formed in at least a partial section within the gas inflow pipe so as to be smaller than an inside diameter of the gas feed-through pipe, and prevents parasitic plasma from being generated in inside of the gas feed-through pipe during the deposition process by increasing pressure of the gas feed-through pipe.

Description

Chemical Vapor Deposition Apparatus for Flat Displays {Chemical Vapor Deposition Apparatus for Flat Display}

1 is a cross-sectional view of a gas inlet of the chemical vapor deposition apparatus for a flat panel display according to an exemplary embodiment.

2 is a structural diagram of a chemical vapor deposition apparatus for a planar display according to an embodiment of the present invention.

3 is a cross-sectional view of a gas inlet of the chemical vapor deposition apparatus for a flat display according to an embodiment of the present invention.

4 is a diagram illustrating a Fassen curve.

* Explanation of symbols for the main parts of the drawings

1: Chemical vapor deposition apparatus for flat panel display

10: upper chamber 11: top plate

13 gas supply unit 15 high frequency power supply unit

20: lower chamber 30: gas inlet

31 gas feed-through tube 32 angle adapter

33: gas inlet pipe 34: parasitic plasma generation stop

35: first section of the parasitic plasma generation blocking unit

36: second section of the parasitic plasma generation blocking unit

50: elevating module 60: electrode

61 back plate 62 gas distribution plate

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a chemical vapor deposition apparatus for planar displays, and more particularly, a display for preventing parasitic plasma generation in a gas feedthrough tube by reducing conductance of a gas inlet pipe to increase pressure in an angle adapter region. A chemical vapor deposition apparatus for the present invention.

Recently, the flat panel display (FPD) has begun to emerge as the electronic display industry is rapidly developing among the semiconductor industry.

A flat panel display (FPD) is an image display device that is thinner and lighter than a cathode ray tube (CRT), which is mainly used as a display for a TV or a computer monitor, and is a liquid crystal display device (LCD, Liquid Crystal). Display, Plasma Display Panel (PDP) and Organic Light Emitting Diodes (OLED).

Among the flat panel displays, a liquid crystal display (LCD) generates a contrast by injecting a liquid crystal, which is an intermediate material between a solid and a liquid, between two thin upper and lower glass substrates, and changing the arrangement of liquid crystal molecules by the difference in electrode voltage between the upper and lower glass substrates. It is a device using a kind of optical switch phenomenon that displays numbers or images.

The liquid crystal display (LCD) is being used as a display for laptop PCs, electronic calculators, and various electronic products, in which a conventional cathode ray tube (CRT) could not be applied by technically implementing thinner, lighter, and lower power consumption. Is rapidly replacing. Among them, LCD TVs conventionally have a size of about 20 inches to about 30 inches, and computer monitors have a mainstream size of 17 inches or less. Recently, however, preference for large TVs of 40 inches or larger and large monitors of 20 inches or larger has increased.

Therefore, the glass substrate constituting the liquid crystal display (LCD) has been produced in a wider size. Currently, 7th generation with width of 1870 ㅧ 2200 ㎜ or 1870 ㅧ 2250 ㎜ is used, and research is being conducted to increase the size of glass substrates to 8 generations of 2160 2460 ㎜ or more. Is in sight.

On the other hand, the liquid crystal display (LCD) is repeatedly a process such as deposition, photo lithography, etching, plasma enhanced chemical vapor deposition (hereinafter referred to as chemical vapor deposition) It is released as a product through the TFT process, Cell process of jointing up and down glass substrates, and Module process of completing instruments.

 One of these processes, the chemical vapor deposition process, is plasma-formed by an external high frequency power source, and silicon-based compound ion gas having high energy is ejected from the gas distribution plate through the electrode. It is a process deposited on a glass substrate.

1 is a cross-sectional view of a gas inlet 130 of a chemical vapor deposition apparatus for a flat panel display according to a conventional embodiment.

The chemical vapor deposition apparatus includes a gas inlet 130 for introducing a plasma-ized ion gas, that is, a process gas into a process chamber (not shown) in the process chamber (not shown). Is provided at the top of the upper chamber (not shown).

As shown in FIG. 1, the gas inlet 130 may include a gas inlet pipe 133 and a process gas for introducing a process gas generated by a gas supply unit (not shown) into a chamber (not shown). A gas feed-through pipe 131 for transferring the gas to the gas inlet pipe 133 and an angle adapter 132 for varying a moving path of the process gas are provided. Here, the inner diameters of the gas feed-through pipe 131, the angle adapter 132, and the gas inlet pipe 133 through which the process gas passes are the same.

As such, the process gas supplied from the gas supply unit (not shown) is a buffer space (not shown) between the rear plate (not shown) and the gas distribution plate (not shown) inside the chamber through the gas inlet unit 130. ), And a process gas supplied into the chamber may be plasma-deposited by a high frequency power source and deposited on the glass substrate G.

On the other hand, the generation of the plasma follows the Paschen Curve. The Fassen curve shows the initial discharge voltage (Vf) according to the pressure (p) and the distance between the electrodes (d) .In a typical chemical vapor deposition apparatus, the product of the pressure (p) and the distance (d) between the electrodes (pd, hereinafter pd) Is proportional to the initial discharge voltage Vf.

However, in the conventional chemical vapor deposition apparatus, when a high frequency power is applied under a specific condition when the process gas is drawn from the ground side to the high frequency power side, parasitic plasma may be generated inside the gas feedthrough tube 131, thereby causing the gas feed. Not only may damage be caused to the inside of the through tube 131 and a structure connected thereto, but particles may be generated to adversely affect the deposition process result.

Accordingly, an object of the present invention is to provide a chemical vapor deposition apparatus for planar displays, which can prevent the gas inlet from being damaged by preventing parasitic plasma generation in the gas feed-through tube and also prevent the generation of particles to improve the process yield. will be.

The object is, according to the present invention, a chamber in which a deposition process for a flat panel display proceeds; A gas inlet pipe for introducing a process gas for the deposition process into the chamber; A gas feed-through pipe connected to the gas inlet pipe and transferring the process gas to the gas inlet pipe; And a parasitic plasma generation blocking unit provided in the gas inlet pipe and increasing a pressure of the gas feed through pipe to prevent parasitic plasma from being generated on an inner wall of the gas feed through pipe during the deposition process. It is achieved by a chemical vapor deposition apparatus for planar displays.

The parasitic plasma generation stopper may be provided on an inner surface of the gas inlet pipe, and may have an inner surface shape of the gas inlet pipe having at least a partial section smaller than an inner diameter of the gas feed-through pipe.

The inner surface of the gas inlet pipe may include a first section formed from a side of the gas feed through pipe to a region of the gas inlet pipe along a length direction of the gas inlet pipe; And a second section having an inner surface different from the first section, and formed from the point where the first section ends to the chamber.

The first section may have an inclined shape, and the second section may have a straight shape.

The first section may be formed to be inclined to the second section to gradually decrease the inner diameter toward the second section side along the longitudinal direction of the gas inlet pipe.

The inner diameter of the second section may be in the range of 15 percent (%) to 95 percent (%) of the inner diameter of the gas feed-through tube.

The gas feed-through pipe and the gas inlet pipe may be disposed to cross each other, and an angle adapter may be further provided between the gas feed-through pipe and the gas inlet pipe to vary the path of the pipe.

The parasitic plasma generation preventing unit may be a gas inlet pipe having a curved shape at least in one region.

The gas feed-through tube may be formed of a ceramic material, and the gas inlet tube may be formed of aluminum.

The flat panel display may be a glass substrate for LCD.

In order to fully understand the present invention, the operational advantages of the present invention, and the objects achieved by the practice of the present invention, reference should be made to the accompanying drawings which illustrate preferred embodiments of the present invention and the contents described in the accompanying drawings.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. Like reference numerals in the drawings denote like elements.

2 is a structural diagram of a chemical vapor deposition apparatus for a planar display according to an embodiment of the present invention, Figure 3 is a cross-sectional view of the gas inlet of the chemical vapor deposition apparatus for a planar display according to an embodiment of the present invention.

Prior to the description, any of flat liquid display (LCD), plasma display panel (PDP), and organic light emitting diodes (OLED) may be applied to the flat display.

However, in the present embodiment, a large glass substrate for an LCD (Liquid Crystal Display) will be described as a flat display. As described above, the large size refers to the size of the level applied to the eighth generation. Hereinafter, the flat panel display will be referred to as a glass substrate (G).

As shown in FIG. 2, the chemical vapor deposition apparatus 1 for a flat panel display according to an embodiment of the present invention includes an upper chamber 10 and a lower chamber (a) in which a deposition process is performed on a glass substrate (G). 20 and an electrode disposed in the upper chamber 10 to discharge a deposition material, ie, a plasma-ized process gas, which is a predetermined silicon-based compound ion toward the glass substrate G, which is a deposition target, and serves as an upper electrode. 60, a susceptor 40 provided in the lower chamber 20, in which the glass substrate G is loaded, and a susceptor support 43 supporting the susceptor 40 under the susceptor 40. ).

Here, the upper chamber 10 and the lower chamber 20 form a body and the deposition space S may be maintained in a vacuum atmosphere when the deposition process for the glass substrate G is performed in the deposition space S therein. The deposition space S is shielded from the outside during the deposition process.

Looking in detail with respect to the upper chamber 10, as shown in Figure 2, the electrode 60 is provided in the transverse direction inside the upper chamber 10. The electrode 60 includes a rear plate 61 coupled to the inside of the upper chamber 10 with a buffer space B therebetween, and a gas distribution plate 62 disposed on the front surface of the lower chamber 20. Equipped.

The rear plate 61 has a central region formed therethrough so that a process gas can be supplied from the gas supply unit 13, and a gas inflow pipe 33 is coupled to the formed portion. The gas distribution plate 62 coupled with the rear plate 61 and the rear plate 61 may have a high frequency power supply unit 15 and a connection line 14 so that the process gas supplied from the gas supply unit 13 may be converted into plasma. Is electrically connected by

In addition, the gas distribution plate 62 is provided with a plurality of gas passing holes (not shown) penetrating the upper and lower portions of the gas distribution plate 62, through which the process gas (gas) It is deposited on the glass substrate (G).

A suspension support member 63 is provided between the rear plate 61 and the gas distribution plate 62. The suspension supporting member 63 not only prevents the plasma-formed process gas in the buffer space B from leaking out, but also provides a gas distribution plate 62 having a weight of several hundred kilograms to the rear plate 61. It plays the role of supporting the current value. In addition, the suspension supporting member 63 also serves to compensate for the thermal expansion of the gas distribution plate 62 which is heated by several hundred degrees, for example, about 200 ° C. during the deposition process, in at least one of X, Y, and Z axes. .

Also, in order to prevent electricity from flowing from the rear plate 61 and the gas distribution plate 62 to the wall of the upper chamber 10, as shown in FIG. 2, the rear plate 61 and the upper chamber 10 An insulator 64 made of Tefron is provided between the walls and between the gas distribution plate 62 and the wall of the upper chamber 10.

The upper plate portion 11 is provided at the upper end of the upper chamber 10. The upper plate portion 11 serves to cover the upper portion of the upper chamber 10. Top plate (11) On the top, a gas supply unit 13 and a gas supply unit 13 which are coupled to the upper plate portion 11 of the upper chamber 10 and provide a plasma process gas to the deposition space S formed by the electrode 60. ) Is provided with a gas inlet part 30 and a high frequency power supply part 15, which are connection passages for introducing a process gas into the process chambers 10 and 20 where the actual deposition process is performed. Here, the description of the gas inlet 30 will be described in detail later.

Referring to the lower chamber 20, the lower chamber 20 is a portion in which the deposition process on the glass substrate G is substantially performed, and the above-described deposition space S is formed in the lower chamber 20. . The substrate entry part 21 is formed on the outer wall of the lower chamber 20 so that the glass substrate G can enter and exit the deposition space S by a predetermined working robot (not shown). The substrate access portion 21 is selectively opened and closed by a door 24 coupled to the periphery thereof.

Although not shown, a gas diffusion plate (not shown) is provided in the bottom region of the lower chamber 20 to diffuse the process gas present in the deposition space S back into the deposition space S.

The susceptor 40 serves as a lower electrode and supports the glass substrate G which is disposed in the transverse direction in the deposition space S in the lower chamber 20 and is loaded. Usually, the substrate is formed of a structure larger than the area of the glass substrate G, which is a deposition target, and the upper surface of the susceptor 40 is manufactured in almost a table so that the glass substrate G can be loaded in a precise horizontal state.

The plurality of lift pins 41 stably supporting the bottom surface of the glass substrate G loaded or taken out on the susceptor 40 to be loaded or taken out while the glass substrate G is placed on the top surface of the susceptor 40. It is further provided. The lift pins 41 are installed in the susceptor 40 so as to pass through the susceptor 40.

When the susceptor 40 descends, the lift pins 41 are pressed to the bottom of the lower chamber 20 so that the upper end protrudes to the upper end of the susceptor 40. The protruding upper end of the lift pin 41 lifts the glass substrate G upwards, and thus the glass substrate G is spaced apart from the susceptor 40. When the susceptor 40 rises, the lift pin 41 moves downward with respect to the upper surface of the susceptor 40 so that the glass substrate G is in close contact with the upper surface of the susceptor 40. That is, the lift pins 41 form a space between the glass substrate G and the susceptor 40 so that the robot arm (not shown) can grip the glass substrate G loaded on the susceptor 40. It also serves as a role.

The susceptor 40 further includes a column 42 having an upper end fixed to the rear center area and a lower end exposed downward through the lower chamber 20 to support the susceptor 40 in a liftable manner. .

As described above, the susceptor 40 under the eighth generation is heavy and the size (size), so the sag may occur, which is due to the sagging of the glass substrate (G) loaded on the upper surface of the susceptor 40, etc. Can be linked. Accordingly, as shown in FIG. 2, a susceptor support 43 is provided in the upper region of the column 42 to stably support the susceptor 40.

The susceptor 40 is moved up and down in the deposition space S in the lower chamber 20. That is, when the glass substrate G is loaded, the glass substrate G is disposed in the bottom region of the lower chamber 20. When the glass substrate G is in close contact with the upper surface of the susceptor 40 and the deposition process is performed, the glass substrate G is disposed. ) Is floated so as to be adjacent to the gas distribution plate 62 which will be described later. To this end, the elevating module 50 for elevating the susceptor 40 is further provided in the column 42 coupled to the susceptor 40.

In the process of elevating the susceptor 40 by the elevating module 50, a space should not be generated between the column 42 and the lower chamber 20. Therefore, a bellows pipe 51 is provided in the region of the lower chamber 20 through which the column 42 passes to surround the outside of the column 42. The bellows pipe 51 is expanded when the susceptor 40 descends and is compressed when the susceptor 40 rises.

As described above, the upper plate portion 11, the gas supply unit 13 for supplying a plasma process gas (gas) to the upper portion, the gas inlet portion 30, the rear plate coupled in the chamber 10 The high frequency power supply unit 15 is electrically connected by the 61 and the connection line 14.

Referring to the gas inlet unit 30 in detail, as shown in FIGS. 2 and 3, the gas inlet unit 30 includes a gas inlet tube 33, a gas supply unit 13, and a gas inlet tube 33. ) Is provided between the gas supply unit 13 and the high frequency power supply unit 15 so as to be connected to the gas feed-through pipe 31 and the gas inlet pipe 33 which serve as a movement path of the process gas flowing from the gas supply unit 13. And an angle adapter 32 provided between the gas feed through pipe 31 and varying a movement path of the process gas.

The gas feed-through pipe 31 is in the form of a hollow tube, one end of which is connected to the gas supply part 13 and the other end of which is connected to the angle adapter 32.

2 and 3, the angle adapter 32, which is a movement path for transferring the process gas from the gas supply unit 13 to the rear plate 61 in the chamber 10, has an approximately '-' shape. Is formed. One end of the angle adapter 32 is coupled to one end of the gas feed-through tube 31, and the other end is coupled to one end of the gas inlet tube 33.

One end of the gas inlet pipe 33 is coupled to the lower end of the angle adapter 32, the other end is coupled to the rear plate 61 in the chamber, the process gas (gas) passing through the angle adapter 32 is gas inlet pipe It passes through the 33 and flows into the process chambers 10 and 20. The angle adapter 32 and the gas inlet pipe 33 are made of a conductor made of aluminum, and the high frequency power generated from the high frequency power supply unit 15 is electrically energized.

By this configuration, the process gas supplied from the gas supply unit 13 passes through the gas feed-through pipe 31, the angle adapter 32, and the gas inlet pipe 33, respectively, in a buffer space B. The back plate 61 may be electroded by the high frequency power supplied by the high frequency power supply unit 15 to plasma the process gas introduced into the buffer space B.

However, as described above, the conventional gas inflow unit 130 is provided such that the inner diameters of the gas feed-through pipe 131, the angle adapter 132, and the gas inflow pipe 133 are the same, and thus, specific conditions during the deposition process. There was a problem that the internal structure is damaged by the parasitic plasma generated inside the gas feed-through tube 31, and there is a problem that directly affects the process results due to the particles generated thereby.

Here, looking at the cause of the parasitic plasma generation in the gas feed-through tube 31, the parasitic plasma generation phenomenon can be described in relation to the discharge start voltage (Vf) of the Paschen curve shown in FIG.

In general, plasma generation follows a Parssen curve. The Fassen curve shows the product of the distance d between the two electrodes and the pressure p and the correlation between the discharge start voltage Vf. Therefore, referring to FIG. 4, when the product of the distance between the electrodes d and the pressure p (hereinafter, referred to as pd value) is large, it can be seen that the discharge start voltage Vf at which the plasma is generated increases in proportion to the pd value. have.

 The specific conditions under which the parasitic plasma is generated will be described with reference to the Passen curve. The discharge starting voltage Vf at which the operating voltage Va or the upper limit variation of the operating voltage Va 'applied to the actual electrode corresponds to an arbitrary pd value is described. ), And under these conditions, the parasitic plasma is generated because the operating voltage Va or the upper limit value of change Va 'of the operating voltage becomes larger than the discharge start voltage Vaf at the time of generating the plasma.

On the other hand, in the chemical vapor deposition apparatus 1, due to various constraints such as structural difficulties and constraints, the electrode distance d between the side connected to the high frequency power source 15 and receiving the high frequency power and the ground part varies. It is not easy to make. In addition, once the operating voltage Va supplied from the high frequency power supply unit 15 to the electrode during the actual deposition process is set, it is difficult to change it. Eventually, whether or not the plasma is generated depends on the pressure p, and the increase in the pressure p is accompanied by an increase in the discharge start voltage Vf in proportion thereto.

Therefore, it is necessary to increase the pressure p1 applied to the gas feed through tube 31 as a method for preventing the generation of parasitic plasma in the gas feed through tube 31 by increasing the discharge start voltage Vf. Increasing the pressure p1 naturally increases the pd value, thereby increasing the discharge start voltage Vf determined. Therefore, the increased discharge start voltage Vf is adjusted to a value larger than the operating voltage Va in the actual deposition process, so that generation of parasitic plasma can be suppressed.

In other words, when the pressure p1 of the gas feed-through tube 31 is increased to increase the pd value, the discharge start voltage Vf value, which is an initial threshold at which plasma is generated, is increased. As a result, the discharge start voltage Vf is adjusted to a value larger than the operating voltage Va and the upper limit variation of the operating voltage Va ', so that the discharge start voltage Vf is not reached during the deposition process. Plasma generation may be inhibited inside the tube 31.

Therefore, in order to prevent generation of parasitic plasma, it is necessary to increase the pressure p1 of the gas feed-through pipe 31. Regarding the way to increase the pressure (p1), it is necessary to consider the relationship between the flow rate (Q), the pressure (p) and the conductance (C, the amount of gas that can flow per hour) in the vacuum tube.

In general, in a vacuum flow pipe, the amount of gas flowing in (Q), the pressure p1 of the gas feed-through pipe 31, the pressure p2 in the process chambers 10 and 20, and the gas inflow pipe 33 with a narrow flow path The relationship with the conductance (C) of may be expressed by a formula such as Q = CX (p1-p2). Since the amount of process gas Q introduced from the gas supply unit 13 per hour and the pressure p2 in the chambers 10 and 20 where the deposition process is performed are fixed, the pressure p1 of the gas feed-through pipe 31 and The relationship with the conductance (C) is inversely proportional to each other.

That is, if the pressure p2 and the process gas amount Q in the upper and lower chambers 10 and 20 are constant, the pressure p1 of the gas feed-through pipe 31 is equal to the pressure p2 in the process chambers 10 and 20. ) And a vacuum pipe formed between the gas feed-through pipe 31 and the process chambers 10 and 20, that is, the conductance C of the gas inflow pipe 33. Therefore, when the quantity of the introduced process gas Q is constant, the smaller the conductance C, the higher the pressure p1 of the gas feed-through pipe 31.

Therefore, when the flow path between the gas feed-through pipe 31 and the chambers 10 and 20 is reduced, the conductance C may be reduced and the pressure p1 of the gas feed-through pipe 31 may be increased in inverse proportion thereto. Through this, parasitic plasma generation may be prevented in the inner region of the gas feed-through tube 31.

Therefore, in one embodiment of the present invention, as shown in Figures 2 and 3, in the gas inlet pipe 33 for introducing a process gas (gas) for the deposition process into the upper and lower chambers (10, 20) A parasitic plasma generating and blocking unit 34 for increasing the pressure p1 of the gas feed-through pipe 31 is provided.

In the present embodiment, the parasitic plasma generation blocking unit 34 is an inner surface shape 34 of the gas inlet pipe 33 formed smaller than the inner diameter of the gas feed-through pipe 31, and an inner surface shape of the gas inlet pipe 33. The first section 35 and the first section 35 are formed from the gas feed-through pipe 31 side to one region of the gas inlet pipe 33 along the longitudinal direction of the gas inlet pipe 33. The inner surface is different from) and includes a second section 36 formed to the process chambers 10 and 20 at the point where the first section 35 ends.

The first section 35 of the inner surface shape 34 of the gas inlet pipe 33 is tapered so that its inner diameter gradually decreases toward the second section 36 in the longitudinal direction of the gas inlet pipe 33. The second section 36 of the inner surface shape 34 of the gas inflow pipe 33 is formed in a straight line. Here, the inner diameter of the second section 36 may be formed to be 15 percent (95) to 95 percent (%) relative to the inner diameter of the gas feed-through tube 31, and in this embodiment, formed to be 60 percent (%). do.

As such, the inner diameter of the gas inlet pipe 33 is made smaller than the inner diameters of the gas feed through pipe 31 and the angle adapter 32 so as to increase the pressure p1 in the region of the gas feed through pipe 31. You can get it.

In addition, the tapered shape of the first section 35 of the inner surface shape 34 of the gas inlet pipe 33 serves to speed up the flow rate of the process gas introduced into the gas inlet pipe 33. On the other hand, by slowly reducing the inner diameter to keep the flow of the process gas (Laminar flow) (Laminar flow) to facilitate the transfer of the process gas. In addition, the first section 35 also functions as a sink on the flow path to remove residues of process gas in the internal regions of the gas feedthrough pipe 31 and the angle adapter 32. .

As such, when the inner diameter of the gas inlet pipe 33 is provided to 15 to 95 percent of the gas feedthrough pipe 31 to reduce the conductance C of the gas inlet pipe 33, the gas feedthrough pipe 31 may be When the pressure p1 can be increased and the pressure p of the gas feed-through pipe 31 is increased, the discharge start voltage Vf corresponding thereto can be increased, resulting in parasitics in the gas feed-through pipe 31. It is possible to prevent the generation of plasma, thereby preventing damage to the structure, it is possible to prevent the generation of particles to improve the deposition yield.

On the other hand, the method for reducing the inner diameter of the gas inlet pipe 33 in order to reduce the conductance (C) of the oil pipe, but in the shape bent at least one or more times under the assumption that it can be effective as another method of reducing the conductance (C). The flow pipe, that is, the length of the gas inlet pipe 33 may be increased.

Hereinafter, with reference to FIGS. 2 and 3, the flow of the process gas in the gas inlet 30 of the chemical vapor deposition apparatus 1 for a planar display of the present embodiment will be described in order according to a movement path.

First, the process gas generated in the gas supply unit 13 is introduced into the gas feed-through pipe 31. The process gas is transferred horizontally through the gas feed-through pipe 31 to the angle adapter 32 provided in the central region of the upper chamber 10. In this embodiment, the gas feed-through pipe 31 is made of a ceramic material and electrically insulated.

The process gas is then passed through the angle adapter 32 provided in the central region of the upper chamber 10. The angle adapter 32 is disposed in the central region of the upper chamber 10 between the gas feed through pipe 31 and the gas inlet pipe 33, and the gas feed through pipe 31 and the gas inlet pipe 33 mutually It is arranged to communicate. In the present embodiment, the angle adapter 32 is vertically downward so that the moving path of the process gas is transferred horizontally to the center region of the upper chamber 10 and then flows into the process chambers 10 and 20. It serves to change the path so that it is transferred to. Meanwhile, in the present embodiment, the angle adapter 32 is made of aluminum so that high frequency power is energized.

Then, the process gas (gas) is introduced into the upper end of the gas inlet pipe 33 is coupled to one end of the angle adapter 32. The gas inlet pipe 33 serves as a guide for moving the process gas into the chambers 10 and 20. As described above, the gas inlet pipe 33 is provided with a parasitic plasma generation blocking unit 34 to increase the pressure of the gas feed-through tube 31. In this embodiment, the parasitic plasma generation preventing unit 34 is As the inner surface shape 34 of the gas inlet pipe 33, the inner surface shape 34 of the gas inlet pipe 33 is a gas inlet pipe from the gas feed-through pipe 31 side along the longitudinal direction of the gas inlet pipe 33. The first section 35 and the first section 35 having a tapered shape, the inner diameter of which is formed up to one region of 33, gradually decreasing toward the second section 36 in the longitudinal direction, and the first section 35 ends. And a straight second section 36 formed from the point to the process chambers 10, 20.

The process gas introduced into the first section 35 of the gas inlet pipe 33 gradually increases in the moving speed of the process gas due to a tapered shape in which the inner diameter gradually decreases. As a result, the flow of gas is also maintained in laminar flow, and also acts as a sink on the flow path, thereby preventing the process gas from flowing back toward the angle adapter 32 and the gas supply part 13.

Thereafter, the process gas flows into the second section 36 and maintains a constant flow rate before entering the buffer space B in the process chambers 10 and 20. Finally, the inside of the chambers 10 and 20 enters the plasma process.

As described above, the first section 35 and the second section 36 inside the gas inlet pipe 33 reduce the inner diameter of the gas inlet pipe 33 so that the pressure p1 of the gas feed-through pipe 31 is reduced. In the end, parasitic plasma generation is prevented in the region inside the gas feed-through tube 31.

As described above, according to one embodiment of the present invention, the parasitic plasma generation stop unit 34 which reduces the conductance C of the gas inlet pipe 33 flow path is provided, so that the pressure p1 of the gas feed-through pipe 31 is provided. ) Can be increased. As a result, the parasitic plasma generation in the gas feed-through tube 31 can be prevented by raising the discharge start voltage Vf, which is the threshold of plasma generation, to prevent damage to the structure and to prevent particles. Occurrence can be prevented to improve the deposition yield during the deposition process.

In the above-described embodiment, the method of reducing the inner diameter of the gas inlet pipe for increasing the pressure of the gas feedthrough pipe, that is, for reducing the conductance of the gas inlet pipe, has been described above. One may also consider a method of reducing the conductance of the gas inlet pipe by increasing the length of the gas inlet pipe by having a curved shape in at least one region of the gas inlet pipe without reduction.

As described above, the present invention is not limited to the described embodiments, and various modifications and changes can be made without departing from the spirit and scope of the present invention, which will be apparent to those skilled in the art. Therefore, such modifications or variations will have to be belong to the claims of the present invention.

As described above, according to the present invention, by preventing the generation of parasitic plasma in the gas feed-through tube, it is possible to prevent damage to the gas inlet and also to prevent particle generation, thereby improving the process yield.

Claims (10)

A chamber in which a deposition process for a flat panel display is performed; A gas inlet pipe for introducing a process gas for the deposition process into the chamber; A gas feed-through pipe connected to the gas inlet pipe and transferring the process gas to the gas inlet pipe; And It is formed in at least a portion of the inner surface of the gas inlet pipe to be smaller than the inner diameter of the gas feed-through pipe, the parasitic plasma is generated on the inner wall of the gas feed-through pipe during the deposition process by increasing the pressure of the gas feed-through pipe A chemical vapor deposition apparatus for a flat panel display, characterized in that it comprises a parasitic plasma generation blocking unit for preventing the thing. delete The method of claim 1, The parasitic plasma generation blocking unit, A first section formed from the gas feed-through pipe side to one region of the gas inflow pipe along a longitudinal direction of the gas inflow pipe; And An inner surface is different from the first section, and includes a second section that is formed from the point where the first section ends to the chamber. The method of claim 3, The first section has a shape inclined so that the inner diameter gradually decreases toward the second section in the longitudinal direction of the gas inlet pipe, And the second section has a straight line shape from a point where the first section ends. delete The method of claim 3, The inner diameter of the second section has a range of 15 percent (95) to 95 percent (%) compared to the inner diameter of the gas feed-through tube chemical vapor deposition apparatus for a flat display. The method of claim 1, The gas feed-through pipe and the gas inlet pipe are arranged to cross each other, an angle adapter for varying the path of the pipe between the gas feed-through pipe and the gas inlet pipe is further provided for the chemical vapor phase for flat display Vapor deposition apparatus. The method of claim 1, And the parasitic plasma generation preventing unit is a gas inlet tube having a curved shape bent in at least one region. The method of claim 1, The gas feed-through tube is formed of a ceramic material, the gas inlet pipe is a chemical vapor deposition apparatus for a flat display, characterized in that the aluminum material. The method of claim 1, The planar display is a liquid crystal display (LCD, Liquid Crystal Display) characterized in that the chemical vapor deposition apparatus for a flat panel display.

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