KR102192623B1 - Deposition Apparatus for Thin Layer - Google Patents

Abstract

A thin film deposition apparatus is provided. The thin film deposition apparatus according to an embodiment of the present invention is formed in a reaction chamber providing a thin film deposition space, an intake part providing deposition gas into the reaction chamber from one side of the reaction chamber, and the other side of the reaction chamber. And an exhaust unit for discharging the deposition gas passing through the reaction chamber, wherein the intake unit comprises a first buffer zone for primary dispersing the deposition gas in a width direction of the reaction chamber and a level different from the first buffer zone. ), and may include a second buffer zone for secondarily dispersing the first dispersed deposition gas in the width direction of the reaction chamber.

Description

Deposition Apparatus for Thin Layer}

The present invention relates to a thin film deposition apparatus, and more particularly, to a thin film deposition apparatus that provides a uniform deposition gas flow on a substrate.

In general, methods of depositing a thin film of a predetermined thickness on a substrate such as a semiconductor substrate or glass include physical vapor deposition (PVD) using physical collisions such as sputtering, and chemical reactions using chemical reactions. And chemical vapor deposition (CVD).

In recent years, as the design rule of semiconductor devices has become rapidly finer, a fine pattern thin film is required, and the step difference in the area where the thin film is formed is also very large, so it is possible to form very uniform atomic layer thickness fine patterns In addition, the use of atomic layer deposition (ALD), which has excellent step coverage, is increasing.

This atomic layer deposition method is similar to a general chemical vapor deposition method in that it uses a chemical reaction between gas molecules. However, unlike conventional CVD, a reaction product generated by simultaneously injecting a plurality of gas molecules into a process chamber is deposited on a substrate, in the atomic layer deposition method, a gas containing a single source material is injected into the process chamber and heated There is a difference in that a product by a chemical reaction between the source materials is deposited on the surface of the substrate by adsorbing to the substrate and then injecting a gas containing another source material into the process chamber.

The atomic layer deposition method is classified into a showerhead method in which deposition gas is uniformly sprayed on a substrate to deposit and a traveling wave method in which deposition gas is injected from one end of the substrate to the other.

In the case of the traveling wave method according to the prior art, it is difficult to form a uniform deposition gas flow on the substrate. Accordingly, there was a problem that the film quality was deteriorated, and the present inventors invented a thin film deposition apparatus that provides a uniform deposition gas flow.

One technical problem to be solved by the present invention is to provide a thin film deposition apparatus that provides a uniform deposition gas flow.

Another technical problem to be solved by the present invention is to provide a compact thin film deposition apparatus.

Another technical problem to be solved by the present invention is to provide a highly reliable thin film deposition apparatus.

The technical problem to be solved by the present invention is not limited to the above.

A thin film deposition apparatus according to an embodiment of the present invention includes a reaction chamber providing a thin film deposition space, an intake part providing a deposition gas into the reaction chamber from one side of the reaction chamber, and the other side of the reaction chamber. And an exhaust unit for discharging the deposition gas that has passed through the reaction chamber, wherein the intake unit includes a first buffer zone for primary dispersing the deposition gas in the width direction of the reaction chamber and a level different from the first buffer zone ( level), and may include a second buffer zone for secondarily dispersing the first dispersed deposition gas in the width direction of the reaction chamber.

According to an embodiment, the width direction may be a direction orthogonal to a direction from the intake part toward the exhaust part.

According to an embodiment, the intake unit may provide the deposition gas to the first buffer zone, and may further include a first inflow passage formed at the same level as the first buffer zone.

According to an embodiment, the intake unit may further include a communication passage for communicating the first buffer zone and a second buffer zone provided at a different level from the first buffer zone.

According to an embodiment, the intake unit provides the deposition gas to the first buffer zone, further includes a first inlet passage formed at the same level as the first buffer zone, and the first inlet passage is the communication It may be located in the center of the width direction than the flow path.

According to an embodiment, the intake unit may further include second inflow passages configured with a plurality of holes to provide the deposition gas dispersed in the second buffer zone to the reaction chamber.

According to an embodiment, the intake part provides the deposition gas to the first buffer zone, a first inflow passage formed at the same level as the first buffer zone, and the intake part comprises the first buffer zone and the first buffer zone. The communication passage for communicating the second buffer zone provided at a level different from the 1 buffer zone and the intake part includes a second inlet passage composed of a plurality of inlets to provide the deposition gas dispersed in the second buffer zone to the reaction chamber. In addition, the number of communication passages may be greater than the number of the first inflow passages and less than the number of the second inflow passages.

According to an embodiment, the intake unit further includes at least two communication passages for communicating the first buffer zone and a second buffer zone provided at a different level from the first buffer zone, and the exhaust unit includes at least two It includes three distributed pumping ports, and a distance between the communication passages may be greater than a distance between the distributed pumping ports.

According to an embodiment, the exhaust unit is provided at a level different from the first pumping zone and the first pumping zone in which at least two distributed pumping ports are provided, and integrated pumping that integrates and exhausts the deposition gas exhausted by the distributed pumping port. It may include a second pumping zone in which a port is provided.

A thin film deposition apparatus according to another embodiment of the present invention includes a reaction chamber providing a thin film deposition space, an intake part providing deposition gas into the reaction chamber from one side of the reaction chamber, and the other side of the reaction chamber. And an exhaust unit for discharging the deposition gas that has passed through the reaction chamber, wherein the exhaust unit is provided at a level different from the first pumping zone and the first pumping zone provided with at least two distributed pumping ports, and It may include a second pumping zone provided with an integrated pumping port for integrating and exhausting the exhausted deposition gas.

A thin film deposition apparatus according to another embodiment of the present invention includes a reaction chamber, a first buffer zone provided on one side of the reaction chamber and providing a first deposition gas dispersion passage in a width direction of the reaction chamber, and the first buffer zone. A second buffer zone provided at a level different from that of the buffer zone and providing a second deposition gas dispersion passage in the width direction of the reaction chamber, and at least two communication passages communicating the first and second buffer zones. A first pumping zone provided on the other side of the reaction chamber and provided with at least two distributed pumping ports and an exhaust part including the first pumping zone, wherein the separation distance between the at least two communication channels is the It can be farther than the separation distance between at least two distributed pumping ports.

The intake port according to an embodiment of the present invention is provided at a level different from that of the first buffer zone and the first buffer zone for first dispersing the deposition gas in the width direction of the reaction chamber, It comprises a second buffer zone for secondary dispersion in the width direction of the reaction chamber.

Accordingly, since the deposition gas can be continuously dispersed twice in the width direction of the substrate, the deposition gas flowing into the substrate can have a uniform flow. In addition, since the first and second buffer zones are formed in the height direction, a foot print (installation area) of the equipment can be minimized.

In addition, the exhaust unit according to an embodiment of the present invention is provided at a level different from the first pumping zone and the first pumping zone in which at least two distributed pumping ports are provided, and integrated to exhaust the deposition gas exhausted by the distributed pumping port. It comprises a second pumping zone provided with a pumping port.

Since the distributed pumping port provides negative pressure to the deposition reaction chamber, the flow of the deposition gas depends on the location of the distributed pumping port. That is, uneven deposition gas flow may be caused depending on the location of the distributed pumping port. However, according to an embodiment of the present invention, by increasing the number of distributed pumping ports that apply negative pressure to the reaction chamber, it is possible to achieve a uniform deposition gas flow, and then, by exhausting the deposition gas through the integrated pumping port, Evaporation gas can be exhausted. In addition, since the first pumping zone and the second pumping zone are formed in the height direction, the footprint of the equipment can be minimized.

1 is a view for explaining a thin film deposition apparatus according to an embodiment of the present invention.
FIG. 2 shows a cross section taken along line B-B' of FIG. 1.
FIG. 3 shows a plan view at line CC′ of FIG. 2.
4 is a plan view illustrating a line DD′ of FIG. 2.
5 is a plan view of the line EE′ of FIG. 2.
6 is a diagram illustrating a flow of a deposition gas in a thin film deposition apparatus according to an embodiment of the present invention.
7 is a diagram showing a flow of a deposition gas in a thin film deposition apparatus according to the prior art.
8 is a diagram illustrating a flow of a deposition gas in a thin film deposition apparatus according to an embodiment of the present invention.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings. However, the technical idea of the present invention is not limited to the embodiments described herein and may be embodied in other forms. Rather, the embodiments introduced herein are provided so that the disclosed content may be thorough and complete, and the spirit of the present invention may be sufficiently conveyed to those skilled in the art.

In the present specification, when a component is referred to as being on another component, it means that it may be formed directly on the other component or that a third component may be interposed between them. In addition, in the drawings, the shape and size are exaggerated for effective description of technical content.

In addition, in various embodiments of the present specification, terms such as first, second, and third are used to describe various components, but these components should not be limited by these terms. These terms are only used to distinguish one component from another component. Accordingly, what is referred to as a first component in one embodiment may be referred to as a second component in another embodiment. Each embodiment described and illustrated herein also includes its complementary embodiment. In addition, in the present specification,'and/or' is used to mean including at least one of the elements listed before and after.

In the specification, expressions in the singular include plural expressions unless the context clearly indicates otherwise. In addition, terms such as "comprise" or "have" are intended to designate the presence of features, numbers, steps, elements, or a combination of the features described in the specification, and one or more other features, numbers, steps, and configurations It is not to be understood as excluding the possibility of the presence or addition of elements or combinations thereof. In addition, in the present specification, "connection" is used to include both indirectly connecting a plurality of constituent elements and direct connecting.

Further, in the following description of the present invention, when it is determined that a detailed description of a related known function or configuration may unnecessarily obscure the subject matter of the present invention, a detailed description thereof will be omitted.

The thin film deposition apparatus according to an embodiment of the present invention may form various atomic layers. For example, at least one of a metal thin film layer, an oxide thin film layer, a nitride thin film layer, a carbide thin film layer, and a sulfide thin film layer may be formed. According to an embodiment, the source gas for forming the metal thin film layer is one of TMA (Tri Methyl Aluminum), TEA (Tri Ethyl Aluminum), and DMACl (Di Methyl Aluminum Chloride), and the reaction gas is oxygen gas and ozone It can be one of the gases. At this time, the purge gas may be one of argon (Ar), nitrogen (N2), helium (He), or a mixture of two or more gases. According to another embodiment, the source gas for forming the silicon thin film layer may be one of silane containing recone (Silane, SiH4), disilane (Si2H6), and silicon tetrafluoride (SiF4), and the reaction gas May be one of oxygen gas and ozone gas. At this time, the purge gas may be one of argon (Ar), nitrogen (N2), helium (He), or a mixture of two or more gases.

In describing an embodiment of the present invention, a source gas, a purge gas, and a reaction gas may be referred to as deposition gas.

In this case, the source gas, the purge gas, and the reaction gas are not limited thereto, and can be changed according to the needs of those skilled in the art.

In describing an embodiment of the present invention, an atomic layer deposition apparatus is assumed, but the technical idea of the present invention is not limited to an atomic layer deposition apparatus.

1 is a diagram for explaining a thin film deposition apparatus according to an embodiment of the present invention, FIG. 2 is a cross-sectional view taken along line B-B' of FIG. 1, and FIG. 3 is a plan view taken along line CC′ of FIG. 4 is a plan view of a line DD′ of FIG. 2, and FIG. 5 is a plan view of a line EE′ of FIG. 2.

1 and 2, a thin film deposition apparatus 100 according to an embodiment of the present invention may include an intake unit 110, a reaction chamber 140, and an exhaust unit 160. Hereinafter, each configuration will be described.

Intake part (110)

The intake unit 110 may perform a function of providing a deposition gas into the reaction chamber 140 from one side of the reaction chamber 140. The intake part 110 may be provided in one end of the reaction chamber 140, for example, in the +X axis direction.

The intake unit 110 may provide a deposition gas having a uniform flow to the reaction chamber 140. For example, the intake unit 110 may provide a deposition gas having a uniform flow in the Y axis direction corresponding to the width direction of the reaction chamber 140 to the reaction chamber 140.

Hereinafter, in this specification, the width direction may be understood to mean the width direction of the reaction chamber 140 and/or the substrate to be deposited, and is orthogonal to the direction from the intake part 110 toward the exhaust part 160. It can mean the direction to do.

The intake unit 110 includes at least one of a first inlet passage 112, a first buffer zone 114, a communication passage 115, a second buffer zone 116, and a second inlet passage 118. It can be done by doing. Hereinafter, each configuration will be described in more detail.

1 to 3, the first inflow passage 112 may perform a function of providing a deposition gas from the outside to the intake unit 110. That is, the first inflow passage 112 may provide a path through which the deposition gas flows in the -X axis direction in FIG. 2.

Subsequently, referring to FIGS. 1 to 3, the first buffer zone 114 receives the deposition gas from the first inflow passage 112 and transfers the deposition gas in the width direction of the reaction chamber 140. It can perform the function of dispersing. To this end, the first buffer zone 114 may be formed at the same level as the first inflow passage 112 and may have a structure extending in the Y-axis direction.

In this specification, the level means the height of the thin film deposition apparatus, and more specifically, may mean the height in the Z-axis direction. As a result, the deposition gas provided from the first inflow passage 112 to the first buffer zone 114 hits one surface of the first buffer zone 114, for example, the YZ surface, in the Y-axis direction. Can be distributed as Accordingly, the first buffer zone 114 may disperse the deposition gas in the width direction of the reaction chamber 140.

Referring to FIG. 3, the communication passage 115 may perform a function of communicating the first buffer zone 114 and the second buffer zone 116. The first buffer zone 114 and the second buffer zone 116 may be located at different levels. For example, the second buffer zone 116 may be located in a -Z axis direction vertically below the first buffer zone 114. Accordingly, the communication passage 115 may provide a passage in the Z-axis direction to communicate the first and second buffer zones 114 and 116.

According to an embodiment, the communication passage 115 may be larger than the first inflow passage 112. As illustrated, when there is only one first inflow passage 112, the number of communication passages 115 may be at least two. In this case, the communication passage 115 may be positioned to be spaced apart from the first inlet passage 112 in the width direction (Y-axis direction) for dispersion of the deposition gas. In another aspect, the first inflow passage 112 may be located at a center in the width direction of the reaction chamber 140 than the communication passage 115.

1, 2 and 4, the second buffer zone 116 may be located at a level below the first buffer zone 114 in a vertical direction. The second buffer zone 116 may perform a function of receiving a deposition gas through the communication channel 115 and transferring the received deposition gas to the second inflow channel 118.

In this case, the second buffer zone 116 may perform a function of dispersing the deposition gas provided through the communication passage 115 once more. The deposition gas provided from the communication channel 115 to the second buffer zone 116 may be dispersed in the Y-axis direction as it collides with one side of the second buffer zone 116, for example, the XY plane. have. Accordingly, the second buffer zone 116 may disperse the deposition gas in the width direction of the reaction chamber 140.

Subsequently, referring to FIGS. 1, 2 and 4, the second inflow passages 118 may provide a passage for transferring the deposition gas dispersed by the second buffer zone 116 to the reaction chamber 140. I can. To this end, the second inflow passage 118 may be configured with a plurality of holes extending in the X-axis direction.

According to an embodiment, the number of the second inflow passages 118 may be greater than that of the communication passages 115 and the first inflow passages 112.

As described above, the intake unit 110 may not simply deliver the deposition gas provided from the outside to the reaction chamber, but may disperse the deposition gas in the width direction of the reaction chamber and deliver the dispersed deposition gas to the reaction chamber. Thereby, the quality of deposition in the reaction chamber can be improved.

Furthermore, since the buffer zone for dispersing the deposition gas is composed of the first and the second two buffer zones, and are located at different levels, it is possible to maximize the dispersion efficiency while minimizing the footprint of the device.

Although the intake unit 110 according to an embodiment of the present invention has been described above, as shown in FIG. 1, a neighboring intake unit symmetrical with the intake unit 110 in the Z-axis direction may be further provided. to be. As described above, the neighboring intake passage is also at least one of the first inlet passage 122, the first buffer zone 124, the communication passage (not shown), the second buffer zone 126, and the second inlet passage 128. It can be made including. Since the functions of each component are the same as described above, detailed descriptions will be omitted.

Reaction chamber (140)

The reaction chamber 140 may receive a deposition gas having a uniform flow in the width direction of the reaction chamber 140 from the intake unit 110. Although not shown, the reaction chamber 140 may provide a thin film deposition space, and a deposition target substrate on which deposition is performed and a station supporting the deposition target substrate may be provided in the thin film deposition space.

The deposition gas provided from the intake part 110 to the reaction chamber 140 may flow through the upper surface of the deposition target substrate in the X-axis direction and proceed to the exhaust part 160. Accordingly, a thin film may be formed on the substrate to be deposited.

Exhaust part 160

The exhaust unit 160 may perform a function of exhausting the deposition gas that has passed through the reaction chamber 140 from the other side of the reaction chamber 140. The exhaust unit 160 may be provided at the other end of the reaction chamber 140, for example, in the -X axis direction.

Since the exhaust unit 160 exhausts the deposition gas by providing a negative pressure to the reaction chamber 140, it is necessary to be designed so as not to cause non-uniform flow of the deposition gas according to the negative pressure.

To this end, as shown in FIGS. 2 and 4, the exhaust unit 160 is different from the first pumping zone 164 and the first pumping zone 164 in which at least two distributed pumping ports 165 are provided. A second pumping zone 166 provided at a level and provided with an integrated pumping port 167 for integrating and evacuating the deposition gas exhausted by the distributed pumping port 165 may be included. Hereinafter, each configuration will be described.

Referring to FIG. 4, an exhaust baffle 162 having a plurality of holes may be provided between the first pumping zone 164 and the reaction chamber 140. The exhaust baffle 162 may perform a function of partitioning an exhaust hole so that non-uniformity of the deposition gas is not caused by the negative pressure caused by the pumping port.

4, the first pumping zone 164 is provided at the same level as the reaction chamber 140, and the bottom surface of the first pumping zone 164, for example, an XY plane At least two dispersion pumping ports 165 for exhausting the deposition gas inside the reaction chamber 140 may be provided in the Z-axis direction.

At least two distributed pumping ports 165 of the first pumping zone 164 may be positioned to be spaced apart in the width direction from a single integrated pumping port 167 of the first pumping zone 166. For example, when the integrated pumping port 167 is located at the center of the reaction chamber 140 in the width direction, the distributed pumping port 165 is spaced a predetermined distance from the center of the reaction chamber 140 in the width direction. Can be located. Accordingly, the sound pressure provided by the integrated pumping port 167 may be provided to the reaction chamber 140 in a state where it is distributed in the width direction by the distributed pumping port 165.

Meanwhile, according to an exemplary embodiment, a separation distance in the Y axis direction between the two distributed pumping ports 165 may be smaller than a separation distance in the Y axis direction between the two communication passages 115. Accordingly, a uniform flow of the deposition gas can be provided from the intake unit 110 to the exhaust unit 160.

Referring to FIG. 5, the second pumping zone 166 may be located at a level different from that of the first pumping zone 164, for example, in the -Z axis direction. The second pumping zone 166 may integrate the deposition gas exhausted from the distributed pumping port 165 and finally exhaust the deposition gas through the integrated pumping port 167.

According to an embodiment, the second pumping zone 166 may be located at the same level as the neighboring intake part, more specifically, the first inflow passage 122 and the first buffer zone 124. In another aspect, one exhaust portion may be provided corresponding to the two intake portions.

The thin film deposition apparatus 100 according to an embodiment of the present invention has been described above. Hereinafter, the flow of the deposition gas will be described in more detail with reference to FIG. 6.

6 is a diagram illustrating a flow of a deposition gas in a thin film deposition apparatus according to an embodiment of the present invention.

Referring to FIG. 6(a), first, the deposition gas may be introduced through the first inflow passage 112 (①). The deposition gas introduced through the first inflow passage 112 may be dispersed in the Y-axis direction (width direction) by the first buffer zone 114 (②). That is, since one side of the first buffer zone 114, for example, the YZ side, blocks the flow path of the deposition gas, the deposition gas hits the YZ side of the first buffer zone 114 and then disperses in the Y-axis direction. Can be.

Referring to FIG. 6B, the deposition gas dispersed by the first buffer zone 114 may flow to the second buffer zone 116 through the communication channel 115 (③). That is, the deposition gas may flow in the -Z axis direction through the communication passage 115.

Referring to FIG. 6(c), the deposition gas passing through the second communication channel 115 and reaching the second buffer zone 116 is dispersed again in the Y-axis direction (width direction) by the second buffer zone 116. Can be (④). That is, since one surface of the second buffer zone 116, for example, the XY plane, blocks the flow path of the deposition gas, the deposition gas hits the XY plane of the second buffer zone 116 and then disperses in the Y-axis direction. Can be.

The deposition gas dispersed by the second buffer zone 116 may flow into the reaction chamber 140 with a uniform flow through the second inflow passage 118 (⑤). The deposition gas flowing through the reaction chamber 140 may pass through the exhaust baffle 162 and reach the distributed pumping port 165 (⑥, ⑦, ⑧). The integrated pumping port 167 does not directly exhaust the deposition gas in the reaction chamber 140, but the distributed pumping port 165 controls the flow of the deposition gas between the integrated pumping port 167 and the reaction chamber 140. , Even in the process of exhausting the deposition gas, it can have a uniform flow.

6(d), the deposition gas exhausted by the distributed pumping port 165 flows to the second pumping zone 166, and thereafter, an integrated pumping port 167 provided in the second pumping zone 166. Can be finally exhausted by

The flow of the deposition gas in the thin film deposition apparatus according to an embodiment of the present invention has been described above with reference to FIG. 6. Hereinafter, with reference to Figs. 7 and 8 will be described the effect of the present invention compared to the prior art.

7 is a diagram illustrating a flow of deposition gas in a thin film deposition apparatus according to the prior art, and FIG. 8 is a view showing a flow of deposition gas in a thin film deposition apparatus according to an embodiment of the present invention.

Referring to FIG. 7, a thin film deposition apparatus according to the prior art includes an inflow passage 10, a dispersion means 15, a reaction chamber 20 in which a wafer W is provided, and a single pumping port 30. .

According to the prior art, non-uniform flow (un) was generated in both the deposition gas flowing into the reaction chamber 20 and the deposition gas exhausted from the reaction chamber 20. This means that the evaporation gas cannot be sufficiently uniformly dispersed by the dispersing means 15 having a hole between the inflow passage 10 and the reaction chamber 15. In addition, when a single pumping port 30 directly provides a negative pressure to the reaction chamber 20, it means that the deposition gas flows unevenly by the negative pressure.

In contrast, referring to FIG. 8, in the thin film deposition apparatus 100 according to an embodiment of the present invention, as described above, the first and second buffer zones 114 and 116 included in the intake unit 110 are It can provide a function of dispersing the deposition gas two times in the width direction. Accordingly, the deposition gas provided from the intake unit 110 to the reaction chamber 140 may have a uniform flow (shown in flow in FIG. 8 ).

Furthermore, the integrated pumping port 167 is not directly connected to the reaction chamber 140, but two distributed pumping ports 165 spaced apart from the integrated pumping port 167 in the Y-axis direction are the reaction chamber 140. Since it provides a negative pressure to, even when the deposition gas is exhausted, a uniform flow (shown in Fig. 8 flow) can be induced.

Accordingly, a uniform thin film can be formed regardless of the position of the substrate to be deposited.

Furthermore, since the first and second buffer zones 114 and 116 are formed at different levels, and the first and second pumping zones 164 and 166 are formed at different levels, the footprint can be minimized. .

In the above, the present invention has been described in detail using preferred embodiments, but the scope of the present invention is not limited to specific embodiments, and should be interpreted by the appended claims. In addition, those who have acquired ordinary knowledge in this technical field should understand that many modifications and variations can be made without departing from the scope of the present invention.

100: thin film deposition apparatus
110: intake part
112: first inflow passage
114: first buffer zone
115: communication flow
116: second buffer zone
118: second inflow channel
140: reaction chamber
160: exhaust
162: exhaust baffle
164: first pumping zone
165: distributed pumping port
166: second pumping zone
167: integrated pumping port

Claims (2)

A reaction chamber providing a thin film deposition space;
An intake part for providing a deposition gas into the reaction chamber from one side of the reaction chamber; And
It is formed on the other side of the reaction chamber and includes an exhaust unit for discharging the deposition gas passing through the reaction chamber,
The intake unit is provided in a first buffer zone for primary dispersing the deposition gas in the width direction of the reaction chamber and at a level different from the first buffer zone, and the first dispersed deposition gas is supplied to the reaction chamber. It includes a second buffer zone for secondary dispersion in the width direction,
The exhaust unit is provided at a level different from the first pumping zone and the first pumping zone with at least two distributed pumping ports, and a second pumping port provided with an integrated pumping port for integrating and exhausting the deposition gas exhausted by the distributed pumping port Including John,
The at least two distributed pumping ports are positioned to be spaced apart in the width direction with respect to the single integrated pumping port,
The sound pressure provided by the integrated pumping port is provided to the reaction chamber while being dispersed in the width direction by the at least two distributed pumping ports,
An exhaust baffle having a plurality of holes is provided between the reaction chamber and the first pumping zone,
The direction in which the distributed pumping port faces is different from the direction in which the plurality of holes provided in the exhaust baffle face,
The plurality of holes are provided in a direction toward the reaction chamber,
The intake part may include: a first inflow passage provided at the same level as the first buffer zone and provided with the deposition gas to the first buffer zone;
At least two communication passages for communicating the first buffer zone and a second buffer zone provided at a different level from the first buffer zone; And
Including; a second inlet passage comprising a plurality of inlets to provide the deposition gas dispersed in the second buffer zone to the reaction chamber, and
The number of communication passages is greater than the number of the first inflow passages, less than the number of the second inflow passages,
The separation distance between the two distributed pumping ports is closer than the separation distance between the communication channels,
Further comprising a neighboring intake,
The neighboring intake part is provided at a different level from the intake part in a form symmetrical with the intake part,
The second pumping zone is positioned at the same level as the neighboring intake part.
The method of claim 1,
The width direction is a direction orthogonal to a direction from the intake part toward the exhaust part.

Images