WO2018190696A1 - Gas supply module for atomic layer deposition - Google Patents

Abstract

A gas supply module for atomic layer deposition according to an embodiment of the present invention includes: a case; and a gas supply unit which is provided inside the case and sprays an atomic layer deposition gas, including a source gas, a purge gas, and a reaction gas, simultaneously in different areas of a deposition target substrate. The gas supply unit is formed to have multiple levels with respect to the height direction of the case, and can diffuse the atomic layer deposition gas from one side to the other side through diffusion holes that are provided in each of the levels.

Description

Gas Supply Module for Atomic Layer Deposition

The present invention relates to an atomic layer deposition technique used in the manufacture of semiconductors or display devices, and more particularly to a gas supply module for atomic layer deposition.

In general, a method of depositing a thin film having a predetermined thickness on a substrate such as a semiconductor substrate or glass includes physical vapor deposition (PVD) using physical collision, such as sputtering, and chemical reaction using a chemical reaction. Chemical vapor deposition (CVD) and the like.

In recent years, as the design rules of semiconductor devices are drastically fined, fine patterns of thin films are required, and the step heights of regions where thin films are formed are also very large, making it possible to form fine patterns of atomic layer thicknesses very uniformly. In addition, the use of atomic layer deposition (ALD) with excellent step coverage has been increasing.

This atomic layer deposition method is similar to the general chemical vapor deposition method in that it utilizes chemical reactions between gas molecules. However, in contrast to conventional CVD in which a plurality of gas molecules are simultaneously injected into a process chamber to deposit a reaction product generated on a substrate, an atomic layer deposition method is heated by injecting a gas containing one source material into the process chamber. The difference is that the product by chemical reaction between the source materials is deposited on the substrate surface by adsorbing onto the substrate and then injecting a gas containing another source material into the process chamber.

However, the atomic layer deposition method currently studied has a problem that productivity is low because it is not uniformly performed in spraying deposition gas on a substrate. Therefore, a gas supply module capable of evenly injecting a deposition gas to maintain high quality of the atomic layer deposition thin film and to improve productivity is proposed.

Related arts include Korean Patent Publication No. 10-2011-0076386 "Atomic Layer Deposition Apparatus Used for Semiconductor Manufacturing" (published: July 06, 2011).

The present invention provides a gas supply module for atomic layer deposition capable of uniformly injecting gas into a substrate used for manufacturing a semiconductor or display device through a plurality of holes through which gas is passed in stages.

In addition, an embodiment of the present invention provides a gas supply module for atomic layer deposition that can prevent the mixing of the injected gas by forming a gas barrier using the gas when the gas is injected into the substrate.

The problem to be solved by the present invention is not limited to the problem (s) mentioned above, and other object (s) not mentioned will be clearly understood by those skilled in the art from the following description.

Gas supply module for atomic layer deposition according to an embodiment of the present invention for achieving the above object is provided in the case, and the inside of the case, the atomic layer deposition including a source gas, purge gas and reaction gas And a gas supply unit for simultaneously injecting a gas into another region of the deposition target substrate, wherein the gas supply unit is formed in a multi-step shape based on a height direction of the case, and the atomic layer is provided through diffusion holes provided for each stage. The deposition gas may be diffused from one side to the other side.

In addition, the gas supply unit according to an embodiment of the present invention includes a source gas supply unit for injecting the source gas, a purge gas supply unit for supplying the purge gas and a reaction gas supply unit for injecting the reaction gas, the source gas The supply unit, the purge gas supply unit and the reaction gas supply unit may be arranged side by side at a predetermined interval along the longitudinal direction of the case.

In addition, the gas supply unit according to an embodiment of the present invention is formed in the first gas diffusion region, the source gas supply unit and the reaction gas supply unit which is a space formed on the gas supply unit, the first gas diffusion A second gas diffusion region, which is a space connected to a region, and a third gas diffusion region, which is formed inside the source gas supply unit and the reactive gas supply unit, and is connected to the second gas diffusion region, may be included.

The first to third gas diffusion regions may include a first partition wall, a second gas diffusion region, and the first gas diffusion region provided between the first gas diffusion region and the second gas diffusion region. A second partition wall disposed between the third gas diffusion regions, and a third partition wall provided below the third gas diffusion region, wherein the diffusion holes are provided in upper and lower surfaces of the first to third partition walls. Can be.

In addition, the diffusion holes according to an embodiment of the present invention may be formed at regular intervals along the longitudinal direction of the first to third partition walls.

In addition, the diffusion hole according to an embodiment of the present invention may be formed to face each other at the corresponding position of one side and the other side of each partition.

In addition, the number of the diffusion holes according to an embodiment of the present invention may satisfy the following formula.

[Equation]

The number of diffusion holes formed in the first partition wall <the number of diffusion holes formed in the second partition wall <The number of diffusion holes formed in the third partition wall.

In addition, the number of diffusion holes formed in the first partition wall according to an embodiment of the present invention is 3 to 5, the number of diffusion holes formed in the second partition wall is 8 to 12, the number of diffusion holes formed in the third partition wall is It may be 240 to 260.

In addition, the gas supply module for atomic layer deposition according to an embodiment of the present invention may further include an outer purge gas supply unit disposed on the outside to surround the gas supply unit and formed in communication with each other.

In addition, the deposition target substrate is provided on the other side of the gas supply unit according to an embodiment of the present invention, and the separation distance between the purge gas supply unit and the deposition target substrate is a separation distance between the reaction gas supply unit and the deposition target substrate and the The distance between the source gas supply unit and the substrate to be deposited may be smaller than.

Specific details of other embodiments are included in the detailed description and the accompanying drawings.

According to an embodiment of the present invention, the gas may be uniformly sprayed onto the substrate used for manufacturing the semiconductor or the display device through the plurality of holes through which the gas passes step by step.

In addition, according to an embodiment of the present invention, when the gas is injected to the substrate, it is possible to prevent the mixing of the injected gas by forming a gas barrier using the gas.

1 is a perspective view showing an upper cross section of a gas supply module in a gas supply module for atomic layer deposition according to an embodiment of the present invention.

2 is a plan view showing a lower cross section of the gas supply module in the gas supply module for atomic layer deposition according to an embodiment of the present invention.

3 is a plan view illustrating a cross-sectional view taken along line AA ′ of the gas supply module of FIG. 1.

4 is a plan view illustrating an internal structure of a gas supply module according to an embodiment of the present invention.

5A to 5C are graphs illustrating an experimental result regarding a flow of a fluid according to a separation distance between a purge gas supply unit and a substrate to be deposited in an embodiment of the present invention.

FIG. 6 is a diagram illustrating a process of depositing a deposition gas through a gas diffusion region of a gas supply unit according to one embodiment of the present invention.

* Description of the major symbols in the drawings

10: first gas diffusion region

12: first partition wall

20: second gas diffusion region

22: second bulkhead

30: first gas diffusion region

32: first bulkhead

110: case

120: gas supply unit

122: source gas supply unit

122a: first source gas supply unit

122b: second source gas supply unit

124: purge gas supply unit

124a: first purge gas supply unit

124b: second purge gas supply unit

124c: third purge gas supply unit

124d: fourth purge gas supply unit

126: reactive gas supply unit

126a: first reaction gas supply unit

126b: second reaction gas supply unit

126c: third reaction gas supply unit

122c, 126d: exhaust vent

128: outer purge gas supply unit

12a, 22a, 32a: diffusion hole

130: stage

Advantages and / or features of the present invention and methods for achieving them will become apparent with reference to the embodiments described below in detail in conjunction with the accompanying drawings. However, the present invention is not limited to the embodiments disclosed below, but may be implemented in various different forms, only the present embodiments to make the disclosure of the present invention complete, and common knowledge in the art to which the present invention pertains. It is provided to fully inform the person having the scope of the invention, which is defined only by the scope of the claims. Like reference numerals refer to like elements throughout.

Hereinafter, with reference to the accompanying drawings will be described embodiments of the present invention;

The atomic layer deposition equipment gas module according to an embodiment of the present invention may form various thin film layers. For example, at least one thin film layer among a metal thin film layer, an oxide thin film layer, a nitride thin film layer, a carbide thin film layer, and a sulfide thin film layer may be formed. According to an embodiment, the source gas for forming the metal thin film layer is one of TriMethyl Aluminum (TMA), Tri Ethyl Aluminum (TEA), and Di Methyl Aluminum Chloride (DMACl), and the reaction gas is oxygen gas and ozone gas. It may be one of the. In this case, as the purge gas, any one of argon (Ar), nitrogen (N 2), helium (He), or a mixture of two or more may be used. According to another embodiment, the source gas for forming the silicon thin film layer may be one of silane (Silane, SiH 4), disilane (Disilane, Si 2 H 6), and silicon tetrafluoride (SiF 4) including a silicon, and a reaction gas. May be one of an oxygen gas and an ozone gas. In this case, as the purge gas, any one of argon (Ar), nitrogen (N 2), helium (He), or a mixture of two or more thereof may be used. At this time, the source gas, the purge gas, the reaction gas is not limited thereto, and may be changed according to the needs of those skilled in the art.

Gas supply module for atomic layer deposition according to an embodiment of the present invention is a module for injecting gas to the deposition target substrate for the atomic layer thin film, comprising a case and a gas supply provided inside the case Can be. An upper portion of the case may be equipped with a suction module (not shown) for suction of gas. In this embodiment, five suction modules may be mounted. The gas supply unit injects an atomic layer deposition gas including a source gas, a purge gas, and a reactant gas to another region of the substrate to be deposited. Hereinafter, the gas supply unit will be described in more detail with reference to FIGS. 1 to 4.

1 is a perspective view showing an upper cross section of a gas supply module in the gas supply module for atomic layer deposition according to an embodiment of the present invention, Figure 2 is a atomic layer deposition according to an embodiment of the present invention In the gas supply module, a plan view showing a lower cross section of the gas supply module, Figure 3 is a plan view showing a cross-sectional view AA 'of the gas supply module of Figure 1, Figure 4 is a gas in one embodiment of the present invention, It is a top view which shows the internal structure of a supply module.

1 and 2, the gas supply unit 120 of the gas supply module includes a source gas supply unit 122 for injecting a source gas, a purge gas supply unit 124 for supplying a purge gas, and a reaction gas for injecting a reaction gas. Supply unit 126 may be included. Each gas supply unit 120 may be arranged in a line with each other in the case 110. That is, the source gas supply unit 122, the purge gas supply unit 124, and the reactive gas supply unit 126 may be arranged side by side at regular intervals along the longitudinal direction of the case 110.

Meanwhile, in the present embodiment, the outer purge gas supply unit 128 may be disposed outside the gas supply unit 120 to surround the gas supply unit 120. The outer purge gas supply unit 128 may be formed in communication with each other along the circumferential direction of the gas supply unit 120. Accordingly, the purge gas injected through the outer purge gas supply unit 128 serves as a gas barrier, thereby separating the inner space where the gas is supplied and the outer space where the gas is not supplied. That is, it is possible to provide an environment where high quality atomic layer deposition is performed by isolating the internal space supplied with gas from the external environment. In addition, atomic layer deposition can be performed at atmospheric pressure, not in a vacuum environment, and roll to roll can be applied.

For reference, the outer purge gas supply unit 128 may spray the purge gas toward the deposition target substrate W through the injection hole 128a provided at the other side as shown in FIG. 4.

Referring to FIG. 3, the gas supply unit 120 may be equipped with a gas supply source providing gas at one side thereof, for example, and spaced apart from each other, for example, by a predetermined interval on the other side. Can be.

A stage 130 including a mounting unit (not shown) on which the substrate is mounted may be provided below the deposition target substrate W. The stage 130 may rotate the seated deposition target substrate W. FIG. Accordingly, since the deposition target substrate W passes under the gas supply unit 120 by the rotation of the stage 130, the atomic layer thin film may be deposited on the deposition target substrate W by receiving the atomic layer deposition gas. have. For reference, the deposition target substrate W may have various shapes as well as a circular shape such as a wafer.

The gas supply unit 120 includes first and second source gas supplies 122a and 122b, first to fourth purge gas supplies 124a, 124b, 124c and 124d, and first to third reactive gas supplies 126a and 126b. , 126c). In this case, the first and second source gas supplies 122a and 122b, the first to fourth purge gas supplies 124a, 124b, 124c, and 124d, and the first to third reactive gas supplies 126a, 126b, and 126c are It may be disposed along the rotation direction of the deposition target substrate (W). Specifically, the first reaction gas supply unit 126a, the first purge gas supply unit 124a, the first source gas supply unit 122a, the second purge gas supply unit 124b, the second reaction gas supply unit 126b, and the third The purge gas supply unit 124c, the second source gas supply unit 122b, the fourth purge gas supply unit 124d, and the third reaction gas supply unit 126c may be disposed in this order. For reference, the outer purge gas supply unit 128 may be disposed at the beginning and the end of the arrangement sequence. That is, the outer purge gas supply unit 128, the first reaction gas supply unit 126a, the first purge gas supply unit 124a, the first source gas supply unit 122a, the second purge gas supply unit 124b, and the second reaction gas The supply part 126b, the 3rd purge gas supply part 124c, the 2nd source gas supply part 122b, the 4th purge gas supply part 124d, the 3rd reaction gas supply part 126c, and the outer purge gas supply part 128 in order. Can be arranged.

The first and second source gas supplies 122a and 122b may receive a source gas from a source gas supply source (not shown), and spray the provided source gas toward the deposition target substrate W. The first to fourth purge gas supply units 124a, 124b, 124c, and 124d may receive a purge gas from a purge gas source (not shown), and spray the supplied purge gas toward the deposition target substrate W. In addition, the first to third reaction gas supply units 126a, 126b, and 126c may receive a reaction gas from a reaction gas source (not shown), and spray the provided reaction gas toward the deposition target substrate W.

According to the present embodiment, each gas supply unit 120 may be configured to inject more deposition gas from the periphery than the center of the stage 130. For example, the injection holes of each gas supply 120 may be larger at the periphery than at the center of the stage 130. This is in consideration of the fact that when the angular velocities of the stage 130 are the same, the linear velocity of the periphery located radially outward is greater than the central portion of the stage 130. As a result, a predetermined atomic layer thin film may be deposited in the region of the deposition target substrate W located at the center of the stage 130 or in the region of the deposition target substrate W positioned at the periphery of the stage 130.

Exhaust ports 122c for exhausting the source gas injected from the first source gas supply unit 122a may be adjacent to both sides of the first source gas supply unit 122a, and on both sides of the second source gas supply unit 122b. An exhaust port 122c for exhausting the source gas injected from the second source gas supply part 122b may be adjacent to each other. Each exhaust port 122c may recover the injected source gas in a direction opposite to the injection direction, thereby preventing the source gas from entering other regions other than the selected injection region. Exhaust ports 126d for exhausting the reaction gas injected from the first reaction gas supply unit 126a may be adjacent to both sides of the first reaction gas supply unit 126a, and on both sides of the second reaction gas supply unit 126b. An exhaust port 126d for exhausting the reaction gas injected from the second reaction gas supply unit 126a may be disposed adjacent to each other, and both sides of the third reaction gas supply unit 126c may be injected from the third reaction gas supply unit 126c. An exhaust port 126d for exhausting the reaction gas may be disposed adjacently. Each exhaust port 126d recovers the injected reaction gas in a direction opposite to the injection direction, thereby preventing the reaction gas from entering other regions other than the selected injection region.

The exhaust ports 122c and 126d may be in communication with a bar dry pump (not shown). By driving the bar dry pump, the source gas and / or the reaction gas out of the corresponding region of the substrate among the source gas and / or the reaction gas injected in the top pumping method may be exhausted.

Referring to FIG. 4, the gas supply units 120 may have different heights based on the height direction of the case 110. In detail, the height of the purge gas supply unit 124 may be higher than the height of the source gas supply unit 122 and the height of the reaction gas supply unit 126. In other words, the separation distance h2 between the purge gas supply unit 124 and the deposition target substrate W may be equal to the separation distance h1 between the reaction gas supply unit 126 and the deposition target substrate W and the source gas supply unit 122. It may be less than the separation distance h2 between the deposition target substrate (W). That is, a physical barrier may be formed due to a gap according to the height difference between the purge gas supply unit 124, the source gas supply unit 122, and the reactive gas supply unit 126. Accordingly, the purge gas injected from the purge gas supply unit 124 serves as an air curtain to prevent mixing of the source gas and the reaction gas.

In this regard, in the present embodiment, an experiment was performed to determine the flow of the fluid according to the separation distance h2 between the purge gas supply unit 124 and the substrate W to be deposited. 5A to 5C, experiments were performed by differently implementing the separation distance h2 between the purge gas supply unit 124 and the deposition target substrate W. Specifically, as shown in FIG. 5A, the separation distance h2 is large. In this case, the experiment was divided into a case where the separation distance h2 is normal as in FIG. 5B and a case where the separation distance h2 is small as in FIG. 5C. As a result of the experiment, it was confirmed that the fluid flow became active when the separation distance h2 between the purge gas supply unit 124 and the deposition target substrate W was set to normal. Through this, the separation distance h2 between the purge gas supply unit 124 and the deposition target substrate W is determined by the separation distance h1 between the source gas supply unit 122 and the deposition target substrate W and the reactive gas supply unit 126. By setting appropriately, which is neither too large nor small than the difference between the separation distance h1 between the deposition target substrates W, deposition can be efficiently performed. For reference, FIGS. 5A to 5C are graphs showing experimental results of fluid flow according to a separation distance h2 between the purge gas supply unit 124 and the deposition target substrate W according to one embodiment of the present invention. .

The gas supply part 120 may have a multi-step shape based on the height direction of the case 110. That is, the gas supply unit 120 is a specific space that is a path through which the deposition gas is supplied between one side of the case 110, for example, the upper side and the other side of the case 110, for example, the lower side of the case 110. It may be configured to include. In detail, the gas supply unit 120 may include first to third gas diffusion regions 10, 20, and 30.

The first gas diffusion region 10 may be a space formed above the gas supply unit 120, and the second gas diffusion region 20 may be formed inside the source gas supply unit 122 and the reaction gas supply unit 126. And a space connected to the first gas diffusion region 10, and the third gas diffusion region 30 is formed inside the source gas supply unit 122 and the reactive gas supply unit 126, and diffuses the second gas. It may be a space connected to the region 20. In this case, the deposition gas may pass through the first gas diffusion region 10, the second gas diffusion region 20, and the third gas diffusion region 30 in order toward the deposition target substrate W.

The first to third gas diffusion regions 10, 20, and 30 may include partition walls provided between the regions. Specifically, as shown in FIG. 6, a first partition 12 may be provided between the first gas diffusion region 10 and the second gas diffusion region 20, and the second gas diffusion region 20 may be provided. ) And a third partition 22 may be provided between the third gas diffusion region 30 and a third partition 32 under the third gas diffusion region 30. For reference, FIG. 6 is a diagram illustrating a process of depositing a deposition gas through a gas diffusion region of the gas supply unit 120 according to one embodiment of the present invention.

The first to third partition walls 12, 22, and 32 may have diffusion holes 12a, 22a, and 32a of predetermined sizes, respectively. In this embodiment, the deposition gas may be diffused from one side of the gas supply unit 120, for example, from the upper side to the other side, for example, through the diffusion holes 12a, 22a, and 32a. Specifically, the deposition gas may be diffused from the first gas diffusion region 10 to the second gas diffusion region 20 through the diffusion hole 12a provided in the first partition 12 and the second gas diffusion region. It is possible to diffuse from the third gas diffusion region 30 to the third gas diffusion region 30 through the diffusion hole 22a provided in the second partition wall 22 from the 20. It may be diffused and sprayed toward the deposition target substrate W through the diffusion hole 32a provided. Through this, the pressure of the deposition gas supplied to the gas supply unit 120 may be evenly distributed to the plurality of diffusion holes 12a, 22a, and 32a to improve deposition uniformity. In addition, since the deposition gas is evenly sprayed by the diffusion holes 12a, 22a, and 32a, the thickness of the deposition target substrate W can also be uniformly processed.

The diffusion holes 12a, 22a, and 32a may be provided in plural on the upper and lower surfaces of the first to third partitions 12, 22, and 32, along the respective longitudinal directions of the first to third partitions 12, 22, and 32. It may be formed at regular intervals.

The diffusion holes 12a, 22a, and 32a may be formed to face each other at corresponding positions of one side and the other side of each partition wall. Specifically, the diffusion holes 12a formed on the other side surface of the first partition wall 12 may be formed in the same number as the diffusion holes 22a formed on the upper surface of the second partition wall 22 and face each other. The diffusion holes 22a formed on the lower surface of the partition wall 22 may face the diffusion holes 32a formed on the upper surface of the third partition wall 32 and may be formed in the same number.

The number of diffusion holes 12a, 22a, and 32a is different for each partition wall, and may satisfy the following equation.

[Equation]

The number of diffusion holes 12a formed in the first partition wall 12 The number of diffusion holes 22a formed in the second partition wall 22 The number of diffusion holes 32a formed in the third partition wall 32.

Specifically, the number of diffusion holes 22a formed on the lower surface of the second partition wall 22 may be greater than the number of diffusion holes 12a formed on the upper and lower surfaces of the first partition wall 12 and the third The number of diffusion holes 32a formed on the lower surface of the partition wall 32 may be greater than the number of diffusion holes 22a formed on the upper and lower surfaces of the second partition wall 22. For example, the number of diffusion holes 12a formed on the upper and lower surfaces of the first partition 12 is 3 to 5, and the number of diffusion holes 22a formed on the lower side of the second partition 22 is The number of diffusion holes 32a formed on the lower surface of the third partition wall 32 may be about 8 to about 12 to about 240 to about 260. Preferably, the number of diffusion holes 12a formed on the upper and lower surfaces of the first partition wall 12 is four, and the number of diffusion holes 22a formed on the lower surface of the second partition wall 22 is ten. The number of diffusion holes 32a formed on the lower side surface of the third partition wall 32 may be 250. Thus, in the present embodiment, the deposition gas can be uniformly sprayed toward the deposition target substrate W through the plurality of diffusion holes 12a, 22a, and 32a provided in each partition wall.

While specific embodiments of the present invention have been described so far, various modifications are possible without departing from the scope of the present invention. Therefore, the scope of the present invention should not be limited to the described embodiments, but should be determined not only by the claims below, but also by the equivalents of the claims.

As described above, the present invention has been described by way of limited embodiments and drawings, but the present invention is not limited to the above-described embodiments, which can be variously modified and modified by those skilled in the art to which the present invention pertains. Modifications are possible. Accordingly, the spirit of the present invention should be understood only by the claims set forth below, and all equivalent or equivalent modifications thereof will belong to the scope of the present invention.

Claims (10)

1. case; And

   A gas supply unit provided inside the case and simultaneously spraying an atomic layer deposition gas including a source gas, a purge gas, and a reactive gas to another region of the substrate to be deposited;

   The gas supply unit

   The gas supply module for the atomic layer deposition, characterized in that having a multi-stage form based on the height direction of the case, to diffuse the atomic layer deposition gas from one side to the other side through the diffusion hole provided for each stage.
2. The method of claim 1,

   The gas supply unit

   A source gas supply unit for injecting the source gas, a purge gas supply unit for supplying the purge gas, and a reaction gas supply unit for injecting the reaction gas,

   The source gas supply unit, the purge gas supply unit and the reaction gas supply unit is a gas supply module for atomic layer deposition, characterized in that arranged side by side at a predetermined interval along the longitudinal direction of the case.
3. The method of claim 2,

   The gas supply unit

   A first gas diffusion region which is a space formed on the gas supply part;

   A second gas diffusion region formed in the source gas supply portion and the reactive gas supply portion, the second gas diffusion region being a space connected to the first gas diffusion region; And

   A third gas diffusion region formed in the source gas supply portion and the reactive gas supply portion, and a space connected to the second gas diffusion region;

   Gas supply module for atomic layer deposition comprising a.
4. The method of claim 3,

   The first to third gas diffusion region is

   A first partition wall disposed between the first gas diffusion region and the second gas diffusion region;

   A second partition wall provided between the second gas diffusion region and the third gas diffusion region; And

   A third partition wall provided below the third gas diffusion region,

   The diffusion hole is a gas supply module for atomic layer deposition, characterized in that a plurality of upper and lower surfaces of the first to third partitions.
5. The method of claim 4, wherein

   The diffusion hole is a gas supply module for atomic layer deposition, characterized in that formed at a predetermined interval along the longitudinal direction of the first to third partition wall.
6. The method of claim 4, wherein

   The diffusion hole is a gas supply module for atomic layer deposition, characterized in that formed to face each other at a corresponding position on one side and the other side of each partition wall.
7. The method of claim 4, wherein

   The number of the diffusion holes is a gas supply module for atomic layer deposition, characterized in that the following formula.

   [Equation]

   The number of diffusion holes formed in the first partition wall <the number of diffusion holes formed in the second partition wall <The number of diffusion holes formed in the third partition wall.
8. The method of claim 7, wherein

   The number of diffusion holes formed in the first partition wall is 3 to 5, the number of diffusion holes formed in the second partition wall is 8 to 12, the atomic layer characterized in that the number of diffusion holes formed in the third partition wall is 240 to 260. Gas supply module for deposition.
9. The method of claim 2,

   An outer purge gas supply unit disposed at an outer side of the gas supply unit to communicate with

   Gas supply module for atomic layer deposition, characterized in that it further comprises.
10. The method of claim 2,

    The deposition target substrate is provided on the other side of the gas supply unit,

    The separation distance between the purge gas supply unit and the substrate to be deposited is

    And a separation distance between the reactive gas supply unit and the deposition target substrate and a separation distance between the source gas supply unit and the deposition target substrate.

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