KR20160134908A - Substrate processing apparatus - Google Patents

Substrate processing apparatus Download PDF

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Publication number
KR20160134908A
KR20160134908A KR1020150066635A KR20150066635A KR20160134908A KR 20160134908 A KR20160134908 A KR 20160134908A KR 1020150066635 A KR1020150066635 A KR 1020150066635A KR 20150066635 A KR20150066635 A KR 20150066635A KR 20160134908 A KR20160134908 A KR 20160134908A
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KR
South Korea
Prior art keywords
process gas
plasma
plate
reaction chamber
substrate
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KR1020150066635A
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Korean (ko)
Inventor
서영수
변형석
민석기
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참엔지니어링(주)
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Priority to KR1020150066635A priority Critical patent/KR20160134908A/en
Publication of KR20160134908A publication Critical patent/KR20160134908A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
    • H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/205—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

Abstract

A plasma processing apparatus includes a reaction chamber, a first plasma generator for generating a plasma of at least one first process gas outside the reaction chamber, a second plasma generator for generating a plasma of at least one second process gas inside the reaction chamber, And a gas distributor for spraying the plasma of the first process gas and the second process gas into the reaction chamber through different paths.

Description

[0001] Substrate processing apparatus [

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate processing apparatus, and more particularly, to a substrate processing apparatus capable of preventing plasma damage of a substrate by using multiple plasmas.

Generally, semiconductor devices, display devices, light emitting diodes or thin film solar cells are manufactured using semiconductor processes. The semiconductor process includes a thin film deposition process for depositing a thin film of a specific material on a substrate, a photo process for exposing a selected region of the thin film using a photosensitive material, an etching process for removing and patterning the thin film of the selected region, Is repeated a plurality of times to form a predetermined laminated structure. Such a semiconductor process proceeds inside a reaction chamber in which an optimal environment is established for the process.

The reaction chamber is provided with a substrate support for supporting the substrate therein and a gas distributor for spraying the process gas, and a gas supply unit for supplying a process gas to the outside of the reaction chamber. That is, the substrate support is provided on the lower side of the inside of the reaction chamber to support the substrate, and the gas distribution portion is provided on the upper side of the reaction chamber to inject the process gas supplied from the gas supply portion onto the substrate. At this time, for example, the thin film deposition process may simultaneously supply at least one process gas constituting the thin film into the reaction chamber (CVD process) or sequentially supply at least two process gases into the reaction chamber (ALD process). Also, as the substrate becomes larger, the uniformity of the process must be kept constant by depositing or etching the thin film evenly over the entire area of the substrate. To this end, a showerhead type A gas distribution portion is frequently used. An example of such a showerhead is disclosed in Korean Patent Publication No. 2008-0020202.

In addition, a plasma apparatus for activating and plasmaizing a process gas may be used to fabricate highly integrated and miniaturized semiconductor devices. The plasma apparatus can be divided into a capacitive coupled plasma (CCP) and an inductively coupled plasma (plasma) according to a method of plasma formation. The CCP forms an electrode in the reaction chamber and the ICP can generate a plasma of the process gas inside the reaction chamber by providing an antenna to which a power source is applied outside the reaction chamber. Such a CCP type plasma apparatus is disclosed in Korean Patent Laid-Open No. 1997-0003557, and an ICP type plasma apparatus is disclosed in Korean Patent No. 10-0963519.

On the other hand, a plasma can be generated by two or more plasma generating sources in one chamber. However, in this case, when high RF power is used, noise is generated and a problem occurs that each system and module malfunction due to noise. Therefore, restrictions are imposed on using the desired RF power.

The present invention provides a substrate processing apparatus using two or more multiple plasmas.

The present invention provides a substrate processing apparatus using multiple plasmas and capable of preventing damage to the substrate.

According to an aspect of the present invention, there is provided a substrate processing apparatus comprising: a reaction chamber; A first plasma generator for generating a plasma of at least one first process gas outside the reaction chamber; A second plasma generator for generating a plasma of at least one second process gas in the reaction chamber; And a gas distributor for spraying the plasma of the first process gas and the second process gas into the reaction chamber through different paths.

The gas distribution unit includes a first region for receiving the first process gas and exciting the first process gas into a plasma state, and a second region for receiving the second process gas and injecting the second process gas downward.

A reaction tube provided below the first plate and supplied with the first process gas and generating a plasma of the first process gas by the second plasma generator; And a third plate provided below the second plate and injecting the second process gas into the reaction chamber through the second plate.

And a spray nozzle passing through the second and third plates and injecting the first process gas activated from the reaction tube into the reaction chamber.

The space between the second and third plates is located in an opening in the lid on the reaction chamber.

The first plasma generating unit includes an antenna provided to surround the reaction tube, and a first power supply unit for applying a first RF power to the antenna.

The second plasma generating unit includes a second power supply unit that uses at least one of the second and third plates as an electrode and applies a second high frequency power to the electrode.

The first and second power supply units apply high frequency power of at least 13.56 MHz or more.

The first power supply unit applies a high frequency power of 27.2 MHz and the second power supply unit applies a high frequency power of 800 kHz to 2 MHz.

And at least one of a magnetic field generating unit and a filter unit provided in the reaction chamber.

The substrate processing apparatus according to the embodiments of the present invention receives the activated first process gas from the first plasma generating unit outside the reaction chamber and receives the second process gas from the outside to generate plasma in the region between the gas distributing unit and the substrate State. Also, the RF power source for activating the first and second process gases, respectively, is varied by about 13.56 MHz or more. Therefore, it is possible to reduce the noise, thereby preventing malfunction of the system and the module, and preventing the damage of the substrate by the plasma.

1 is a cross-sectional view of a substrate processing apparatus according to an embodiment of the present invention;
2 is an exploded perspective view of a gas distribution unit of a substrate processing apparatus according to an embodiment of the present invention;
3 is a cross-sectional view of a substrate processing apparatus according to another embodiment of the present invention.
4 is a cross-sectional view of a substrate processing apparatus according to another embodiment of the present invention;

Hereinafter, embodiments of the present invention will be described in detail. It should be understood, however, that the invention is not limited to the disclosed embodiments, but is capable of other various forms of implementation, and that these embodiments are provided so that this disclosure will be thorough and complete, It is provided to let you know completely.

FIG. 1 is a schematic cross-sectional view of a substrate processing apparatus according to an embodiment of the present invention, and FIG. 2 is an exploded perspective view of a gas distribution unit provided in the substrate processing apparatus.

Referring to FIG. 1, a substrate processing apparatus according to an exemplary embodiment of the present invention includes a reaction chamber 100 having a predetermined reaction space, a substrate support portion provided below the reaction chamber 100 to support the substrate 10 At least a portion of which is provided outside the reaction chamber 100 and includes at least one activated first process gas and at least one unactivated second process gas, And a gas distributor 400 for distributing the gas. A first plasma generator 500 for generating a plasma of a first process gas outside the reaction chamber 100 and a second plasma generator 500 for generating a plasma of a second process gas in the reaction chamber 100, (600). Here, the first plasma generating part 500 can generate a plasma having a density higher than that of the second plasma generating part 600.

The reaction chamber 100 provides a predetermined reaction zone and keeps it confidential. The reaction chamber 100 includes a reaction part 100a having a substantially circular planar part and a side wall part extending upward from the planar part and having a predetermined space and a reaction chamber 100a positioned on the reaction part 100a in a substantially circular shape, (Not shown). Of course, the reaction part 100a and the lid 100b may be formed in various shapes other than the circular shape, for example, a shape corresponding to the shape of the substrate 10. A substrate support 200 is provided in the reaction part 100a of the reaction chamber 100 and an opening is formed in the lid 100b so that a part of the gas distribution part 400 can be inserted. An exhaust pipe 110 is connected to a lower side of the reaction chamber 100, for example, below the substrate support 200, and an exhaust device (not shown) is connected to the exhaust pipe 110. At this time, a vacuum pump such as a turbo molecular pump can be used as the exhaust device, and the inside of the reaction chamber 100 can be vacuum-sucked up to a predetermined reduced pressure atmosphere, for example, a predetermined pressure of 0.1 mTorr or less. The exhaust pipe 110 may be installed not only on the side surface but also below the reaction chamber 100. In addition, a plurality of exhaust pipes 110 and corresponding exhaust devices may be further provided to reduce the exhaust time. An insulator (not shown) may be provided between the gas distributor 400 and the lid 100b to insulate the gas distributor 400 inserted into the opening formed in the lid 100b. In addition, an electromagnet (not shown) may be provided outside the reaction chamber 100 to form a magnetic field in the reaction chamber 100 to uniform the plasma density.

A substrate support 200 is provided under the reaction chamber 100. That is, the substrate support 200 is provided at a position opposite to the gas distribution portion 400. The substrate support 200 may be provided with an electrostatic chuck or the like so that the substrate 10 introduced into the reaction chamber 100 can be seated. The substrate 10 is adsorbed and held on the electrostatic chuck by electrostatic force. At this time, the substrate 10 may be held by vacuum attraction or mechanical force in addition to the electrostatic force. The substrate support 200 may be provided in a substantially circular shape, but may be formed in a shape corresponding to the shape of the substrate 10, and may be made larger than the substrate 10. Here, the substrate 10 may include a substantially circular silicon substrate for semiconductor device manufacture and a roughly rectangular glass substrate for manufacturing display devices. A substrate elevator 210 is provided below the substrate support 200 to move the substrate support 200 up and down. The substrate lift 210 moves the substrate support 200 closer to the gas distribution portion 400 when the substrate 10 is placed on the substrate support 200. A heater (not shown) may be mounted inside the substrate support 200. The heater generates heat at a predetermined temperature to heat the substrate 10, thereby facilitating a thin film deposition process or the like on the substrate 10. The heater may use a halogen lamp, and may be installed in the circumferential direction of the substrate support 200 about the substrate support 200. At this time, the generated energy increases the temperature of the substrate 10 by heating the substrate support 200 with radiation energy. In addition, a cooling pipe (not shown) may be further provided inside the substrate support 200 in addition to the heater. The cooling tube circulates the coolant inside the substrate support 200 so that the cool heat is transferred to the substrate 10 through the substrate support 200 to control the temperature of the substrate 10 to a desired temperature. Of course, the heater and the cooling pipe may not be provided in the substrate support 200, but may be provided outside the reaction chamber 100. The substrate 10 can be heated by a heater provided inside the substrate support 200 or outside the reaction chamber 100, and the substrate 10 can be heated to 50 ° C to 800 ° C by controlling the number of mounting the heater.

The process gas supply unit 300 includes a plurality of process gas reservoirs (not shown) for respectively storing a plurality of process gases, and two or more process gas supply pipes (not shown) for supplying the process gas from the process gas reservoir to the gas distribution unit 400 310, and 320, respectively. For example, the first process gas supply pipe 310 may be connected to the gas distribution unit 400 through the upper central portion of the gas distribution unit 400, and the second process gas supply unit 320 may be connected to the gas distribution unit 400 And may be connected to the gas distribution portion 400 through the side surface of the gas distribution portion 400. At least one first process gas supply unit 310 may be provided and at least one second process gas supply unit 320 may be provided. Further, although not shown, a predetermined region of the plurality of process gas supply pipes 310 and 320 may be provided with a valve and a mass flow controller for controlling the supply of the process gas. On the other hand, thin-film deposition gas, for example, there can be used a silicon-containing gas and the oxygen-containing gas when depositing the silicon oxide, the silicon-containing gas may comprise SiH 4 or the like, oxygen-containing gas is O 2, H 2 O , O 3 , and the like. At this time, the silicon-containing gas and the oxygen-containing gas are supplied through different process gas supply pipes (310, 320). For example, the silicon-containing gas may be supplied through the first process gas supply pipe 310 and the oxygen-containing gas may be supplied through the second process gas supply pipe 320. In addition, an inert gas such as H 2 , Ar or the like may be supplied together with the thin film deposition gas. The inert gas may be supplied simultaneously with the silicon-containing gas and the oxygen-containing gas through the first and second process gas supply pipes 310 and 320 .

The gas distribution unit 400 is provided to evenly distribute the process gas supplied from the process gas supply unit 300 onto the substrate 10 inside the reaction chamber 100. The gas distribution unit 400 may include a first plate 410, a diffusion plate 420, a reaction tube 430, an insulation member 440, a second plate 450, and a third plate 460. have. The first plate 410 is connected to the first process gas supply pipe 310 and the diffusion plate 420 uniformly diffuses the first process gas supplied from the first plate 410. The reaction tube 430 allows the first process gas to be activated in the plasma state by the first plasma generator 500 provided outside and the insulating member 440 is connected to the reaction tube 430 and the second plate 450 Insulated. The second plate 450 and the third plate 460 spray the second process gas supplied therebetween and inject the first process gas activated in the reaction pipe 430 downward. At this time, the second plate 450 and the third plate 460 may be used as an electrode for generating plasma in the reaction chamber 100. A more detailed description of this gas distributor 400 will be described later with reference to Fig.

The first plasma generator 500 generates plasma of the process gas outside the reaction chamber 100. For this, the first plasma generator 500 may use at least one of an ICP method, a helicon method, and a remote plasma method. In this embodiment, the ICP method will be described as an example. The first plasma generator 500 may include an antenna 510 to surround a part of the gas distribution unit 400 and a first power supply unit 520 connected to the antenna 510. Here, the first power supply unit 520 may generate a high frequency power of, for example, 27.2 MHz. The antenna 510 is provided to surround the reaction tube 430 and receives the first RF power from the first power supply 520 to excite the first process gas into the plasma state in the reaction tube 430. The antenna 510 is provided in a predetermined tube shape and allows the cooling water to flow therein, thereby preventing the temperature rise when the first high frequency power is applied. The first plasma generating unit 500 includes a first power supply unit 520 and a second power supply unit 520. The first power supply unit 520 receives the first process gas from the process gas supply unit 300 and maintains the inside of the reaction pipe 430 at a proper pressure by the exhaust gas. 510, plasma is generated in the reaction tube 430 when the first high frequency power source is applied. A magnetic field generating coil (not shown) may be provided around the reaction tube 430 to allow the radicals generated by the plasma to reach the substrate 10 smoothly in the reaction tube 430. A magnetic field can be confined in the space near the reaction tube 430 by flowing a current in a direction opposite to that of the magnetic field generating coil. For example, a current is supplied to the first magnetic field generating coil adjacent to the reaction tube 430 so that a magnetic field directed to the substrate 10 is generated, and the second magnetic field generating coil outside the first magnetic field generating coil The magnetic field can be confined in the space adjacent to the reaction tube 430. [0158] As shown in FIG. Therefore, even if the distance between the reaction tube 430 and the substrate 10 is short, the magnetic field is relatively small in the vicinity of the substrate 10, so that a high density plasma can be generated in a relatively high vacuum, can do.

The second plasma generator 600 is provided to excite the second process gas supplied into the reaction chamber 100 into a plasma state. To this end, the embodiment of the present invention uses the CCP method as the second plasma generator 600. [ That is, the second plasma generating unit 600 excites the process gas supplied from the gas distributing unit 400 to the reaction region, that is, between the substrate 10 and the gas distributing unit 400, into the plasma state. The second plasma generating part 600 may include an electrode provided in the gas distributor 400 and a second power supply part 610 for applying a second high frequency power to the electrode. Further, it may include a ground power supply for supplying a ground power to the substrate support 200. The electrode may be provided on at least a part of the gas distribution part 400, for example, the third plate 460 of the gas distribution part 400 may be used as an electrode. That is, a high frequency power is supplied from the second power supply 610 to the third plate 460 and the substrate support 200 is grounded so that the plasma of the process gas in the region between the gas distributor 400 and the substrate 10 . To this end, the third plate 460 may be made of a conductive material. Of course, the second plate 450 and the third plate 460 may be respectively made of a conductive material and their edges may be connected by a conductive material, so that the second plate 450 and the third plate 460 may be used as electrodes have. The second power supply unit 610 is connected to the third plate 460 and supplies a high frequency power for generating plasma in the reaction chamber 100. The second power supply 610 may include a high frequency power source and a matching device. The second power supply unit 610 applies a power of, for example, 50 to 100 W to generate a high frequency power of 800 kHz to 2 MHz. That is, the first power supply unit 520 and the second power supply unit 610 generate a high frequency so as to have a frequency difference of 13.56 MHz or more, for example, 25 MHz. If the difference between the frequencies applied to the first plasma generator 500 and the second plasma generator 600 is increased, the noise can be reduced, thereby preventing malfunction of the system and the module. On the other hand, the matching unit detects the impedance of the reaction chamber 100 to generate an imaginary imaginary component of impedance opposite to the imaginary component of the impedance, thereby supplying the maximum power into the reaction chamber 100 so that the impedance becomes equal to the real resistance, Thereby generating an optimum plasma.

The gas distribution unit will be described in more detail with reference to FIG.

2, the gas distributor 400 according to the present invention includes a first plate 410, a diffusion plate 420, a reaction tube 430, an insulator 440, a second plate 450, Plate 460 as shown in FIG. Further, it may further include an injection nozzle 470.

The first plate 410 may be provided in a plate shape corresponding to the shape of the substrate 10. That is, when the substrate 10 is circular, the first plate 410 may be formed in a circular plate shape, and when the substrate 10 is rectangular, the first plate 410 may be formed in a rectangular plate shape. have. In this embodiment, a case where the gas distributor 400 is provided in a circular shape and the first plate 410 or the like is circular is explained. The first plate 410 may have a first insertion port 411 through which the first process gas supply pipe 310 is inserted. That is, the first plate 410 may have a first insertion port 411 through which the first process gas supply pipe 310 is inserted. Here, the diameter of the first insertion port 411 is formed according to the diameter of the first process gas supply pipe 310 so that the first process gas supply pipe 310 can be inserted. A flange may be provided at the edge of the first plate 410 and may be used for coupling the first plate 410 and the reaction tube 430.

The diffusion plate 420 is provided to evenly diffuse the process gas supplied to the reaction tube 430 through the first plate 410. That is, since the diffusion plate 420 is provided in the reaction tube 430 below the first plate 410, the process gas is supplied to the upper side of the diffusion plate 420, dispersed through the diffusion plate 420, The process gas can be evenly distributed inside the furnace. At this time, a plurality of through holes 421 are formed in the diffusion plate 420. That is, a plurality of through holes 421 are formed in the diffusion plate 420 to uniformly distribute the process gas supplied to the reaction tube 430 and move the process gas downward. At this time, the plurality of through holes 421 formed in the diffusion plate 420 may have the same size and the same spacing, or may have different sizes or intervals. For example, since a larger amount of the process gas can be supplied to the region located directly below the first process gas supply pipe 310, the through hole 421 located directly below the first process gas supply pipe 310 The smaller the size, and the larger the distance, the larger the size. In addition, the through holes 421 located directly below the first process gas supply pipe 310 have a large spacing and a greater distance from the through holes 421. That is, when the through holes 421 are formed to have the same size, the distance from the first process gas supply pipe 310 can be made narrower. When the through holes 421 are formed at the same interval, The larger the distance from the one process gas supply pipe 310 is.

The reaction tube 430 is provided to excite the process gas supplied through the first plate 410 into a plasma state. An antenna 510 is disposed outside the reaction tube 430 so as to surround the reaction tube 430 and a high frequency power is applied from the first power supply 520 to the antenna 510, So that a plasma of gas is generated. For this, the reaction tube 430 may be made of sapphire, quartz, ceramics, or the like. The reaction tube 430 may be provided in a substantially cylindrical shape having a predetermined diameter and length. That is, the reaction tube 430 may have the same shape as the first plate 410 according to the shape of the substrate 10, and may be cylindrical when the substrate 10 is circular. The upper side of the reaction tube 430 is connected to the first plate 410 and the lower side of the reaction tube 430 is connected to the insulating member 440.

An insulating member 440 is provided between the reaction tube 430 and the second plate 450 to insulate them. That is, an insulating member 440 is provided between the reaction tube 430 in which an ICP type plasma is generated and the second plate 450 to which an unactivated process gas is supplied, Is not applied. The insulating member 440 may be provided in a ring shape, for example, between the reaction tube 430 and the edge region of the second plate 450. At least one second process gas supply pipe 320 may be connected to the insulating member 440. The process gas supplied through the insulating member 440 may be supplied to the space between the second plate 450 and the third plate 460. That is, a gas supply path is formed in the side surface of the insulating member 440 and the side surface of the second plate 450, and a gas supply port is formed on the inner surface of the second plate 450. The process gas supplied from the second process gas supply pipe 320 can be supplied to the space between the second plate 450 and the third plate 460.

The second plate 450 may be provided in a plate shape having the same shape as the first plate 410. That is, the second plate 450 may be provided in the shape of a substantially circular plate along the shape of the substrate 10. In addition, the second plate 450 can be supplied with the second process gas through the insulating member 440. To this end, the process gas supply path is formed in at least a part of the upper side of the upper plate 450, 3 plate 450 may be supplied with the second process gas. The second plate 450 has a plurality of through holes 451 passing through the top and bottom. A plurality of injection nozzles 470 may be inserted into the plurality of through holes 451, respectively. The injection nozzle 470 may be provided to supply a plasma of the process gas formed in the reaction tube 430 onto the substrate 10. In addition, the second plate 450 may have a stopper (not shown) having a predetermined thickness for supporting the spray nozzle 470 at an upper portion thereof. That is, the upper side of the through hole 451 is recessed larger than the diameter of the through hole, and the portion becomes a catching jaw. The catching jaw allows the upper portion of the spraying nozzle 470 to be seated, so that the spraying nozzle 470 can be supported by the second plate 420. On the other hand, a flange is formed on the upper portion of the second plate 450 and a flange can be seated on the cover 100b of the reaction chamber 100. An extended portion extending downward may be formed at the edge of the second plate 450 to provide a predetermined space between the third plate 460 and the third plate 460. When the extension part is provided, a supply path and a supply port through which the second process gas is supplied may be formed in the extension part. Of course, since the second plate 450 and the third plate 460 are provided at the opening of the lid 100b, the extension 100 is not provided and the side surfaces of the second and third plates 450 and 460 are It can be sealed.

The third plate 460 is spaced apart from the second plate 450 and provided below the second plate 450. The third plate 430 is provided in the same shape as the first plate 410 and the second plate 420 and is provided in a substantially circular plate shape. At this time, the third plate 460 can be inserted into the opening formed in the lid 100b of the reaction chamber 100. That is, the second plate 450 is inserted on the upper side of the lid 100b and the third plate 460 is inserted on the lower side of the lid 100b so that the second plate 450 and the third plate 460 And is sealed by the lid 100b to provide a predetermined space therebetween. Of course, an extension extending downward from the edge of the second plate 450 may be provided to seal the edges of the second and third plates 450 and 460, and the extension may be inserted into the opening of the lid 100b. A process gas is supplied from the second process gas supply unit 320 to a region between the second plate 450 and the third plate 460. In addition, a plurality of through holes 461 passing through the top and bottom are formed in the third plate 460. The injection nozzle 470 can be inserted into a part of the plurality of through holes 461. Therefore, the number of the through holes 461 of the third plate 460 is greater than the number of the through holes 451 of the second plate 450. For example, the number of the through holes 451 of the second plate 450 is twice Can be formed in a large number. That is, the through-hole 461 of the third plate 460 partly discharges the process gas supplied to the space between the second plate 450 and the third plate 460 downward, and another part of the through- Can be inserted. At this time, the through hole 461 through which the injection nozzle 470 is inserted and the through hole 461 through which the injection nozzle 470 is not inserted can be disposed adjacent to each other. That is, they can be disposed adjacent and uniformly to each other to uniformly spray the activated first process gas injected through the injection nozzle 470 and the second inert gas process gas injected through the through hole 461 . The third plate 460 functions as an electrode for activating the second process gas supplied between the gas injection unit 400 and the substrate 10. For example, the RF power is applied to the third plate 460 and the substrate support 200 is grounded, so that the process gas supplied onto the substrate 10 can be excited into the plasma state.

The injection nozzle 470 may be provided in a tubular shape having a predetermined length and diameter. The injection nozzle 470 may be inserted through the second plate 450 and the third plate 460. That is, the injection nozzle 470 may be inserted into the through hole 451 of the second plate 450 and the through hole 461 of the third plate 460, which are spaced apart from each other by a predetermined distance. Accordingly, the process gas activated in the reaction tube 430 can be injected onto the substrate 10 through the injection nozzle 470. Meanwhile, since the third plate 460 is made of a conductive material and functions as an electrode for plasma generation, the injection nozzle 470 may be made of an insulating material and insulated from the third plate 460. On the other hand, the spray nozzle 470 may have a head (not shown) having a larger width than the other area on the upper part. So that the head is caught by the step of the second plate 450. That is, the injection nozzle 470 is inserted into the through hole 451 of the second plate 450 and the head is hooked to the step of the second plate 450, so that the injection nozzle 470 is inserted into the second plate 450 450, respectively.

A plurality of through holes 461 may be formed in the third plate 460 to inject the process gas between the second and third plates 450 and 460 around the injection nozzle 470 . The through holes 461 are formed in the third plate 460 as many as the number of the injection nozzles 470 and the through holes 461 are formed to have diameters larger than the diameter of the injection nozzles 470, And the process gas between the second and third plates 450 and 460 may be injected around the injection nozzle 470. In this case,

As described above, the substrate processing apparatus according to an embodiment of the present invention receives the activated first process gas from the first plasma generator 500 outside the reaction chamber 100, and supplies the second process gas from the outside And is activated in the plasma state in the region between the gas distribution portion 400 and the substrate 10. [ That is, the first process gas in a plasma state is supplied from the outside of the reaction chamber 100, and the plasma of the second process gas is generated in the reaction chamber 100. In order to generate the plasma of the second process gas inside the reaction chamber 100, the gas distributor 400 partially functions as an electrode. The frequency difference between the high frequency power source of the first plasma generator 500 and the high frequency power of the second plasma generator 600 is different by about 13.56 MHz or more. Accordingly, it is possible to reduce the noise, thereby preventing malfunction of the system and the module, and to prevent the substrate 10 from being damaged by the plasma because the plasma is weakly generated on the substrate 10.

The substrate processing apparatus of the present invention can be variously modified. Various embodiments of such a substrate processing apparatus will be described with reference to FIGS. 3 and 4. FIG.

FIG. 3 is a schematic cross-sectional view of a substrate processing apparatus according to another embodiment of the present invention, and may further include a magnetic field generating unit 700 provided inside the reaction chamber 100 to generate a magnetic field for activating the plasma. That is, the substrate processing apparatus according to another embodiment of the present invention includes a reaction chamber 100 provided with a predetermined reaction space, a substrate support 200 provided below the reaction chamber 100 to support the substrate 10, A first plasma generator 500 for generating a plasma of the first process gas outside the reaction chamber 100; a first plasma generator 500 for generating a plasma of the first process gas outside the reaction chamber 100; a process gas supply unit 300 for supplying a process gas; A second plasma generating unit 600 for generating a plasma of the second process gas in the reaction chamber 100, a magnetic field generating unit 600 provided in the reaction chamber 100 for generating a magnetic field for activating the plasma, (700).

The magnetic field generator 700 is provided inside the reaction chamber 100 and generates a magnetic field inside the reaction chamber 100. The magnetic field generator 700 may include a first magnet 710 provided on the upper side of the reaction chamber 100 and a second magnet 720 provided on the lower side of the substrate support 200, for example. That is, the first magnet 710 may be provided below the lid 100b of the reaction chamber 100, and the second magnet 720 may be provided on the inner bottom surface of the reaction chamber 100 below the substrate support 200 . However, the positions of the first and second magnets 710 and 720 are not limited to those in which the plasma is processed, that is, the inside of the gas distribution portion 400 and the outside of the upper region of the substrate support 200 It is possible. For example, a first magnet 710 may be provided within the gas injection portion 400, that is, between the second plate 450 and the third plate 460, and the second magnet 720 may be provided between the substrate support 200 and the bottom surface of the reaction chamber 100. In addition, the first magnet 710 and the second grindstone 720 may be provided with different polarities. That is, the first and second magnets 710 and 720 may be provided as a single magnet having N poles and S poles respectively, or may be provided as a single magnet having S poles and N poles, respectively. The first and second magnets 710 and 720 may be formed of a permanent magnet, an electromagnet, or the like, and they may be provided inside and a case may be provided to surround the magnet. That is, the first and second magnets 710 and 720 can be manufactured by providing a permanent magnet, an electromagnet, or the like in a case having a predetermined internal space. At this time, the case may be made of aluminum material, for example. Also, the first and second magnets 710 and 520 may be formed of a single magnet, and may be provided in the shape and size of the substrate 10. Since the first and second magnets 710 and 720 having different polarities are provided on the upper and lower sides of the reaction chamber 100, a magnetic field is generated in the up and down direction inside the reaction chamber 100. The plasma can be activated by the magnetic field generated in the vertical direction, thereby improving the plasma density. That is, the plasma can be generated at substantially the same density on the upper side as well as on the lower side of the reaction chamber 100. Therefore, the plasma density on the substrate 10 can be kept high, the film quality of the thin film deposited on the substrate 10 can be improved, and the etching rate of the thin film can be improved.

4 is a cross-sectional view of a substrate processing apparatus according to another embodiment of the present invention.

Referring to FIG. 4, a substrate processing apparatus according to another embodiment of the present invention includes a reaction chamber 100 provided with a predetermined reaction space, a substrate supporting portion provided below the reaction chamber 100 to support the substrate 10, A process gas supply unit 300 for supplying a process gas, a gas distribution unit 400 provided in the reaction chamber 100 for distributing a process gas, A second plasma generating unit 600 for generating a plasma of the second process gas in the reaction chamber 100, a second plasma generating unit 600 for generating a plasma of the substrate supporting unit 200, And a filter unit 800 provided between the distributor units 400. The plasma processing apparatus may further include a magnetic field generating unit 700 provided in the reaction chamber 100 to generate a magnetic field for activating the plasma.

The filter unit 800 is provided between the gas distribution unit 400 and the substrate support 200 and has a side surface connected to the side wall of the reaction chamber 100. Therefore, the filter portion 800 can maintain the ground potential. The filter unit 800 filters ions, electrons, and light of plasma emitted from the gas distribution unit 400. That is, when the excited process gas injected from the gas distributor 400 passes through the filter unit 800, ions, electrons, and light are blocked so that only reactive species react with the substrate 10. The filter unit 800 causes the plasma to be applied to the substrate 10 at least once after it hits the filter unit 800. When the plasma hits the filter unit 800 at the ground potential, ions and electrons having high energy can be absorbed. Further, the light of the plasma collides with the filter unit 800 and is not transmitted. The filter unit 800 may be formed in various shapes, for example, a single plate having a plurality of through holes 810, or a plate in which the through holes 810 are formed may be arranged in multiple layers, The through holes 810 of the respective plates may be shifted from each other, or a plurality of through holes 810 may be formed in a plate shape having a predetermined bent path.

Although the technical idea of the present invention has been specifically described according to the above embodiments, it should be noted that the above embodiments are for explanation purposes only and not for the purpose of limitation. It will be apparent to those skilled in the art that various modifications and variations can be made in the present invention without departing from the spirit and scope of the invention.

100: reaction chamber 200: substrate support
300: process gas supply unit 400: gas distribution unit
500: first plasma generator 600: second plasma generator
410: first plate 420: diffuser plate
430: reaction tube 440: insulating member
450: second plate 460: third plate
470: injection nozzle

Claims (10)

A reaction chamber;
A first plasma generator for generating a plasma of at least one first process gas outside the reaction chamber;
A second plasma generator for generating a plasma of at least one second process gas in the reaction chamber; And
And a gas distributor for spraying the plasma of the first process gas and the second process gas into the reaction chamber through different paths.
The substrate processing apparatus according to claim 1, wherein the gas distribution unit includes a first region for receiving the first process gas and exciting the first process gas into a plasma state, and a second region for receiving the second process gas and injecting the second process gas downward.
The gas distribution system according to claim 2, wherein the gas distributor comprises a first plate,
A reaction tube provided below the first plate and supplied with the first process gas and generating a plasma of the first process gas by the second plasma generator;
A second plate provided below the reaction tube,
And a third plate provided below the second plate and supplied with the second process gas therebetween to inject the second process gas into the reaction chamber.
4. The apparatus of claim 3, further comprising an injection nozzle for injecting a first process gas activated through the reaction tube through the second and third plates into the reaction chamber.
4. The apparatus of claim 3, wherein a space between the second and third plates is located in an opening in the lid on the reaction chamber.
The plasma processing apparatus according to claim 3 or 4, wherein the first plasma generator comprises: an antenna provided to surround the reaction tube;
And a first power supply for applying a first RF power to the antenna.
The substrate processing apparatus of claim 5, wherein the second plasma generating unit includes a second power supply unit that uses at least one of the second and third plates as an electrode and applies a second high frequency power to the electrode.
The substrate processing apparatus according to claim 7, wherein the first and second power supply units apply a high frequency power different by at least 13.56 MHz.
The substrate processing apparatus according to claim 8, wherein the first power supply unit applies a high frequency power of 27.2 MHz and the second power supply unit applies a high frequency power of 800 kHz to 2 MHz.
The substrate processing apparatus according to claim 1, further comprising at least one of a magnetic field generating section and a filter section provided inside the reaction chamber.
KR1020150066635A 2015-05-13 2015-05-13 Substrate processing apparatus KR20160134908A (en)

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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018190696A1 (en) * 2017-04-14 2018-10-18 주식회사 넥서스비 Gas supply module for atomic layer deposition
KR20180129408A (en) * 2017-05-26 2018-12-05 제주대학교 산학협력단 Head for Atomic Layer Deposition and Atomic Layer Deposition Apparatus Having the Same
WO2019124736A1 (en) * 2017-12-21 2019-06-27 무진전자 주식회사 Plasma apparatus for dry cleaning semiconductor substrate
WO2019194540A1 (en) * 2018-04-05 2019-10-10 무진전자 주식회사 Plasma dry cleaning device using complex rf frequencies
CN113921362A (en) * 2020-07-10 2022-01-11 细美事有限公司 Substrate processing apparatus and substrate supporting unit
KR20230056208A (en) * 2021-10-20 2023-04-27 (주)아이씨디 Plasma Substrate Processing Apparatus

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2018190696A1 (en) * 2017-04-14 2018-10-18 주식회사 넥서스비 Gas supply module for atomic layer deposition
KR20180115912A (en) * 2017-04-14 2018-10-24 주식회사 넥서스비 Gas supply module for atomic layer deposition
KR20180129408A (en) * 2017-05-26 2018-12-05 제주대학교 산학협력단 Head for Atomic Layer Deposition and Atomic Layer Deposition Apparatus Having the Same
WO2019124736A1 (en) * 2017-12-21 2019-06-27 무진전자 주식회사 Plasma apparatus for dry cleaning semiconductor substrate
WO2019194540A1 (en) * 2018-04-05 2019-10-10 무진전자 주식회사 Plasma dry cleaning device using complex rf frequencies
CN113921362A (en) * 2020-07-10 2022-01-11 细美事有限公司 Substrate processing apparatus and substrate supporting unit
KR20230056208A (en) * 2021-10-20 2023-04-27 (주)아이씨디 Plasma Substrate Processing Apparatus

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