KR20160053493A

KR20160053493A - Gas supplying device and atomic layer deposition apparatus having the same

Info

Publication number: KR20160053493A
Application number: KR1020140152570A
Authority: KR
Inventors: 박성현; 신인철; 이근우; 김경준
Original assignee: 주식회사 케이씨텍
Priority date: 2014-11-05
Filing date: 2014-11-05
Publication date: 2016-05-13

Abstract

An atomic layer deposition apparatus capable of processing a large area substrate is disclosed. The gas supply device for a large-area atomic layer deposition apparatus is characterized in that the gas supply device for an atomic layer deposition apparatus includes a first spray portion for supplying a source gas to a substrate, a second spray portion for providing a reaction gas to the substrate, And a third injection portion including a plurality of purge regions divided by the first injection portion, the second injection portion being formed to occupy at least 50% or more of the gas supply device area, The third ejection portion includes a first purge region disposed before the first ejection portion and a second purge region disposed after the first ejection portion with respect to a rotation direction of the substrate, The area can be formed to be twice or more the area of the first purging area.

Description

TECHNICAL FIELD [0001] The present invention relates to a gas supply apparatus and an atomic layer deposition apparatus having the gas supply apparatus.

The present invention relates to an atomic layer deposition apparatus and, more particularly, to a gas supply apparatus for atomic layer deposition apparatus capable of improving the quality of a thin film and an atomic layer deposition apparatus having the same.

In general, in order to deposit a thin film having a predetermined thickness on a substrate such as a semiconductor substrate or a glass substrate, physical vapor deposition (PVD) using physical collision such as sputtering and chemical vapor deposition (chemical vapor deposition), or the like.

The design rule of the semiconductor device is sharply reduced and a thin film of a fine pattern is required and a step of a region where the thin film is formed is also very large. As a result, the use of atomic layer deposition (ALD), which not only can form fine patterns of atomic layer thickness very uniformly but also has excellent step coverage, is increasing.

The atomic layer deposition method (ALD) is similar to the general chemical vapor deposition method in that it utilizes chemical reactions between gas molecules. However, unlike a conventional chemical vapor deposition (CVD) method in which a plurality of gas molecules are simultaneously injected into a process chamber to deposit the reaction product generated on the substrate onto the substrate, the atomic layer deposition method is a method in which one gaseous material is introduced into the process chamber And then it is purged to leave only the physically adsorbed gas on the surface of the heated substrate and thereafter injects another gas material to deposit the chemical reaction product generated on the substrate surface. The thin film realized by the atomic layer deposition method is widely popular because it has the advantage of having excellent step coverage characteristics and realizing a pure thin film having a low impurity content.

Meanwhile, a conventional atomic layer deposition apparatus is disclosed in a semi-batch type in which a deposition process is simultaneously performed on a plurality of substrates in order to improve throughput. Typically, a different kind of deposition gas is provided inside the semi-batch type atomic layer deposition apparatus, and the deposition gas or the susceptor is sprayed on the substrate surface at the substrate surface as the substrate sequentially passes through the region where the deposition gas is provided The reaction product is deposited. And the conventional atomic layer deposition process is performed by repeating the cycle consisting of the first source gas providing, the purge, the second source gas providing, and the purge step a plurality of times.

A semi-batch type atomic layer deposition apparatus is disclosed in which a deposition process is simultaneously performed on a plurality of substrates to improve throughput in an atomic layer deposition apparatus. Typically, a semi-batch type atomic layer deposition apparatus forms regions where different kinds of deposition gases are provided, and as the gas ejection unit or the susceptor rotates at high speed, the substrate sequentially passes through each region where the deposition gas is provided A chemical reaction of the deposition gases occurs on the surface of the substrate to deposit a reaction product.

According to embodiments of the present invention, there is provided a gas supply apparatus for improving the quality of a thin film and an atomic layer deposition apparatus having the gas supply apparatus.

The problems to be solved by the present invention are not limited to the above-mentioned problems, and other matters not mentioned can be clearly understood by those skilled in the art from the following description.

According to an aspect of the present invention, there is provided a gas supply apparatus for an atomic layer deposition apparatus, including: a first spray section for supplying a source gas to a substrate; a first spray section for supplying a reactive gas to the substrate; And a third jetting section including a plurality of purge regions divided by the first jetting section and providing a purge gas to the substrate, wherein the second jetting section comprises at least 50% Wherein the third ejection portion includes a first purge region disposed before the first ejection portion and a second purge region disposed after the first ejection portion with respect to a rotation direction of the substrate , The area of the second purging region may be formed to be twice or more the area of the first purging region.

According to one aspect of the present invention, the first ejection portion includes a source ejection portion for providing the source gas to the substrate, a suction portion disposed around the source ejection portion to suck gas from the substrate, And a guard portion for providing a guard gas to the substrate. In the first ejection portion, the source ejection portion may have a slit shape along a linear direction orthogonal to the rotation direction of the substrate. For example, the suction portion and the guard portion may be disposed on both sides of the source spray portion and may have a slit shape parallel to the source spray portion. In addition, the guard portion may be an air curtain for providing the guard gas to the substrate.

According to one aspect of the present invention, the third ejection portion may be formed by dividing the second purge region into at least two or more divided purge regions along the rotation direction of the substrate. Here, the second purge region may include an exhaust portion between the divided purge regions for exhausting and exhausting exhaust gas from the substrate.

According to one aspect, the second injection portion may be divided into a plurality of reaction regions, each of which provides a different kind of reaction gas. The second jetting unit may include a plasma generating unit that generates plasma in at least one of the plurality of reaction areas. The second jetting portion and the third jetting portion may have a fan shape.

According to another aspect of the present invention, there is provided an atomic layer deposition apparatus including a susceptor in which a plurality of substrates are radially seated and rotated, and a susceptor provided on the susceptor, Wherein the gas supply device comprises: a first jetting section for providing a source gas to the substrate; a second jetting section for providing a reactive gas to the substrate, wherein at least 50% And a first purge region disposed before the first jetting unit with respect to a rotation direction of the substrate and a second purge region disposed after the first jetting unit And a third ejection portion including a second purge region formed so that the area of the second purge region is twice or more the area of the first purge region.

According to one aspect of the present invention, the first injecting portion includes a source injecting portion injecting the source gas into the substrate, a suction portion disposed around the source injecting portion and sucking gas from the substrate, And a guard portion for providing a guard gas to the substrate. Here, the first ejecting portion may have a slit shape along the linear direction orthogonal to the rotation direction of the substrate, and the suction portion and the guard portion are disposed on both sides of the source ejecting portion, And can have a parallel slit shape. In addition, the guard portion may be an air curtain for providing the guard gas to the substrate.

According to one aspect of the present invention, the third ejection portion is formed by dividing the second purging region into at least two or more divided purging regions along the rotation direction of the substrate, and the second purging region is formed between the divided purging regions, An exhaust unit for sucking and exhausting exhaust gas may be disposed.

According to one aspect, the second injection portion may be divided into a plurality of reaction regions, each of which provides a different kind of reaction gas. For example, the second jetting unit may include a plasma generating unit that generates plasma in at least one of the plurality of reaction areas.

Various embodiments of the present invention may have one or more of the following effects.

As described above, according to the embodiments of the present invention, since the source gas is provided in a linear shape and the suction portion and the guard portion are formed around the source gas spray portion, the source gas can be prevented from diffusing to the surroundings.

Further, the purging effect of the source gas can be improved by forming the purging area large, particularly by forming it with a larger area after the first jetting part.

Further, by forming the region of the reaction gas to be large, the reactivity of the reaction gas can be enhanced and the quality of the thin film can be improved.

1 is a schematic view of an atomic layer deposition apparatus according to an embodiment of the present invention.
2 is a plan view of a gas supply device for an atomic layer deposition apparatus according to an embodiment of the present invention.
Fig. 3 is a plan view of the first injection part in the gas supply device of Fig. 2;
4 is a cross-sectional view taken along line AA of the first injecting portion of FIG.
5 is a plan view of a gas supply device for an atomic layer deposition apparatus according to another embodiment of the present invention.
6 is a plan view of a second injection part of a gas supply device for an atomic layer deposition apparatus according to a modified embodiment of the present invention.

Hereinafter, some embodiments of the present invention will be described in detail with reference to exemplary drawings. It should be noted that, in adding reference numerals to the constituent elements of the drawings, the same constituent elements are denoted by the same reference numerals whenever possible, even if they are shown in different drawings. In the following description of the embodiments of the present invention, a detailed description of known functions and configurations incorporated herein will be omitted when it may make the difference that the embodiments of the present invention are not conclusive.

In describing the components of the embodiment of the present invention, terms such as first, second, A, B, (a), and (b) may be used. These terms are intended to distinguish the constituent elements from other constituent elements, and the terms do not limit the nature, order or order of the constituent elements. When a component is described as being "connected", "coupled", or "connected" to another component, the component may be directly connected or connected to the other component, Quot; may be "connected,""coupled," or "connected. &Quot;

1 to 6, an atomic layer deposition apparatus (ALD) 10 according to embodiments of the present invention and a gas supply apparatus 100 Will be described in detail. 1 is a schematic diagram of an atomic layer deposition apparatus 10 according to an embodiment of the present invention, and FIG. 2 is a schematic view of an atomic layer deposition apparatus according to an embodiment of the present invention. 1 is a plan view of the gas supply device 100; 3 is a plan view of the first jetting unit 110 in the gas supply apparatus 100 of FIG. 2, and FIG. 4 is a sectional view taken along the line A-A of the first jetting unit 110 of FIG. 5 is a plan view of a gas supply apparatus 100 for an atomic layer deposition apparatus according to another embodiment of the present invention. FIG. 6 is a plan view of a gas supply apparatus 100 according to another embodiment of the present invention, FIG.

The atomic layer deposition apparatus 10 includes a process chamber 11, a susceptor 12 on which a plurality of substrates 1 are mounted and a susceptor 12 provided on the susceptor 12 to supply a gas to the substrate 1, And a device (100).

The atomic layer deposition apparatus 10 may be a semi-batch type in which deposition is simultaneously performed on a plurality of substrates 1 to improve throughput. The susceptor 12 is formed so as to revolve while a plurality of substrates 1 are supported in parallel. And the gas supply device 100 provides each of the deposition gases to the susceptor 12 so that the substrate 1 is capable of moving the region of the deposition gas provided in the gas supply device 10 as the susceptor 12 rotates A predetermined thin film is formed on the surface of the substrate 1 while passing through.

Here, the detailed description of the structure of the process chamber 11 and the like constituting the atomic layer deposition apparatus 10 can be understood from the known art, and therefore only the main components will be described in detail with reference to the drawings.

The substrate 1 to be deposited in this embodiment may be a silicon wafer. However, the substrate 1 to which the present invention is applied is not limited to a silicon wafer, and may be a transparent substrate including a glass used for a flat panel display device such as a liquid crystal display (LCD) or a plasma display panel (PDP) have. Further, the shape and size of the substrate 1 are not limited to those shown in the drawings, and may have substantially various shapes and sizes such as circular and square.

In this embodiment, the term 'source gas' refers to a gas containing a source material for depositing a predetermined thin film. The source gas S includes constituent elements constituting the thin film, And a reactant gas R which chemically reacts with the source gas S to form a thin film according to a predetermined reaction product and an unreacted gas of the source gas S and the reactive gas R, And purge gas (P1, P2, P3) for removing gas.

The gas supplying apparatus 10 includes a first jetting section 110 for supplying a source gas S to the substrate 1 and a second jetting section 130 for providing a reactive gas R and a purge gas P1, , And P3).

Hereinafter, the rotation direction of the substrate 1 is indicated by an arrow in FIG. 2, and is referred to as 'before' and 'after' with reference to the rotation direction of the substrate 1. However, these terms are only for the purpose of distinguishing the components from other components, and these terms do not limit the nature, order or order of the components.

The first jet 110 provides the source gas S to the substrate 1, and the source gas S is formed to be provided only in that region. 3 and 4, the first jetting section 110 includes a source jetting section 111 for supplying a source gas S to the substrate 1, a source jetting section 111 for supplying a source gas S to the substrate 1, A suction unit 113 disposed around the suction unit 113 for sucking gas from the substrate 1 and a gas G disposed around the suction unit 113 to block diffusion of the source gas S to the surroundings And a guard portion 115 for guiding the light beam. For example, the guard portion 115 can provide a purge gas.

According to the present embodiment, since the suction part 113 and the guard part 115 are provided around the source spray part 111, the source gas S provided to the substrate 1 is prevented from diffusing to the surroundings, It is possible to prevent the deposition from occurring.

The first injector section 110 is formed, for example, so that the source injector section 111 can provide the source gas S in a linear form to the substrate 1. [ Further, the source spraying section 111 may be formed in a slit shape along a linear direction orthogonal to the rotation direction of the substrate 1. The suction part 113 and the guard part 115 are disposed on both sides of the source spray part 111 and may have a slit shape parallel to the source spray part 111. [ In particular, the guard portion 115 may be an air curtain that provides gas to the substrate 1 so as to prevent the source gas S provided to the substrate 1 from diffusing outward. However, the present invention is not limited to the drawings, and the shape of the first jetting section 110 may be substantially varied.

The second spray portion 130 is formed to have a size of 50% or more of the total area of the gas supply device 100. According to the present embodiment, since the area of the second jet part 130 is increased, the contact time between the reaction gas R and the substrate 1 is increased to improve the reactivity of the reaction gas R, Quality can be improved.

The second jetting part 130 may have a fan shape. For example, the second jet part 130 may have a sector shape having a central angle of 180 degrees or more. However, the present invention is not limited to the drawings, and the shape of the second jetting part 130 may be substantially varied.

Meanwhile, the second injector 130 may be divided into a plurality of reaction regions 131 and 132 so as to provide different kinds of reaction gases (R1, ..., RN). The second jetting unit 130 may be provided with a plasma generating unit for generating plasma in at least one of the plurality of reaction regions 131 and 132 in order to increase the reactivity of the reaction gas R. [

According to this embodiment, since the gas supplying device 100 is formed such that the area of the second jetting part 130 occupies at least 50% or more of the area of the gas supplying device 100, the reactivity of the reactive gas is increased, . It is also possible to form the multi-component thin film by dividing the second injection part 130 to provide a plurality of different reaction gases. It is also possible to provide a plasma supplying part (not shown) for supplying a plasma to a part of the second jetting part 130.

The third spray portion 150 is formed in an area sufficient to sufficiently purge the source gas S provided to the substrate 1. [ The third spray part 150 is disposed on both sides of the first spray part 110 and forms a larger area after the first spray part 110 based on the rotating direction of the substrate 1 do. The third injector section 150 is disposed before the first injecting section 110 and the second purge section 152 is disposed below the first injecting section 110. [ ) And the third purge region 153. [ That is, according to the present embodiment, the sum of the areas of the second purge region 152 and the third purge region 153 is formed to have an area of at least twice the area of the first purge region 151.

For example, the third ejector 150 and each of the purge regions 151, 152, and 153 may be formed in a fan shape having a predetermined angle with respect to the center of rotation of the substrate 1. However, the present invention is not limited to the drawings, and the shape and size of the third spray part 150 may be substantially varied.

The present embodiment is not limited to the second purge region 152 and the third purge region 153. However, the present invention is not limited to this, May be formed as one region. In this case, the area of the second purge region 152 is formed to have an area larger than twice the area of the first purge region 151.

According to this embodiment, the area of the second purge region 152 (or the area where the second purge region 152 and the third purge region 153 are combined) is twice the area of the first purge region 151 Or more, the source gas S can be sufficiently purged.

5, an exhaust unit 170 for sucking and exhausting the exhaust gas may be further disposed between the second purge region 152 and the third purge region 153. [ According to the present embodiment, the effect of purging and removing the source gas S in the substrate 1 can be obtained by arranging the exhaust portion 170 between the second purge region 152 and the third purge region 153 Can be improved.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments. For example, it is to be understood that the techniques described may be performed in a different order than the described methods, and / or that components of the described systems, structures, devices, circuits, Lt; / RTI > or equivalents, even if it is replaced or replaced.

Therefore, other implementations, other embodiments, and equivalents to the claims are also within the scope of the following claims.

1: substrate
10: atomic layer deposition apparatus
11: Process chamber
12: susceptor
100: gas supply device
110:
111:
113:
115:
130:
131, 132: Reaction zone
150: Third Division
151, 152, and 153:
170:

Claims

A first jetting section for supplying a source gas to the substrate;
A second jetting section for supplying a reaction gas to the substrate; And
A third jetting section providing a purge gas to the substrate and including a plurality of purge regions divided by the first jetting section;
Lt; / RTI >
Wherein the second injection portion is formed to occupy at least 50% or more of the gas supply device area,
Wherein the third ejection portion includes a first purge region disposed before the first ejection portion and a second purge region disposed after the first ejection portion with respect to a rotation direction of the substrate, Is formed to be twice or more the area of the first purge region,
A gas supply device for an atomic layer deposition apparatus.

The method according to claim 1,
The first injector
A source emitter for providing the source gas to the substrate;
A suction portion disposed around the source spray portion and sucking gas from the substrate; And
A guard portion disposed around the suction portion to provide a guard gas to the substrate;
And a gas supply unit for supplying gas to the atomic layer deposition apparatus.

3. The method of claim 2,
The first injector
Wherein the source injection portion has a slit shape along a linear direction orthogonal to a rotation direction of the substrate.

The method of claim 3,
Wherein the suction portion and the guard portion are disposed on both sides of the source spray portion and have a slit shape parallel to the source spray portion.

3. The method of claim 2,
Wherein the guard portion is an air curtain for providing the guard gas to the substrate.

The method according to claim 1,
The third injector
And a second purging region is dividedly formed into at least two or more divided purging regions along the rotation direction of the substrate.

The method according to claim 6,
And the second purge region is provided with an exhaust portion for sucking and exhausting exhaust gas from the substrate between the divided purge regions.

The method according to claim 1,
Wherein the second injecting portion is divided into a plurality of reaction regions each providing a different kind of reaction gas.

9. The method of claim 8,
Wherein the second injecting unit includes a plasma generating unit for generating plasma in at least one of the plurality of reaction regions.

The method according to claim 1,
Wherein the second jetting portion and the third jetting portion have a fan shape.

A susceptor in which a plurality of substrates are radially seated and rotated; And
A gas supply device provided on the susceptor, for supplying a deposition gas to the substrate;
Lt; / RTI >
The gas supply device includes:
A first jetting portion for supplying a source gas to the substrate;
A second jetting section for providing a reaction gas to the substrate and forming at least 50% or more of the gas supply device area; And
A first purge region disposed before the first jetting unit and a second purge region disposed after the first jetting unit with respect to a rotation direction of the substrate; A third ejection portion formed so that the area of the second purge region is twice or more the area of the first purge region;
And an atomic layer deposition apparatus.

12. The method of claim 11,
The first injector
A source gas injector for injecting the source gas into the substrate;
A suction portion disposed around the source spray portion and sucking gas from the substrate; And
A guard portion disposed around the suction portion to provide a guard gas to the substrate;
And an atomic layer deposition apparatus.

13. The method of claim 12,
The first injector
Wherein the source injection portion has a slit shape along a linear direction orthogonal to a rotation direction of the substrate,
Wherein the suction portion and the guard portion are disposed on both sides of the source spray portion and have a slit shape parallel to the source spray portion.

13. The method of claim 12,
Wherein the guard portion is an air curtain for providing the guard gas to the substrate.

12. The method of claim 11,
The third injector
A second purge region is dividedly formed into at least two or more divided purge regions along the rotation direction of the substrate,
And an exhaust portion for sucking and discharging the exhaust gas from the substrate is disposed between the divided purge regions in the second purge region.

12. The method of claim 11,
Wherein the second injecting unit is divided into a plurality of reaction regions each providing a different kind of reaction gas.

17. The method of claim 16,
Wherein the second ejection unit includes a plasma generation unit for generating plasma in at least one of the plurality of reaction regions.