KR101265905B1 - Exhaust gas separating exhausted atomic layer deposition apparatus - Google Patents

Abstract

Disclosed are an atomic layer deposition apparatus and a gas injection module for separating and discharging exhaust gases in an atomic layer deposition apparatus providing deposition gas in eight quarters. In the atomic layer deposition apparatus, the atomic layer deposition apparatus for providing a plurality of different deposition gases to a plurality of substrates to form a thin film, a process chamber, a susceptor provided in the process chamber, the plurality of substrates are seated, A gas injection module provided in an upper part of the process chamber to provide a plurality of deposition gases to the substrate, a tower exhaust part provided in the gas injection module to suck and discharge exhaust gas from the upper part of the substrate and an upper part of the process chamber; And an exhaust discharge unit for discharging the exhaust gas sucked from the tower exhaust unit. Here, the exhaust discharge portion is formed to separate and discharge the exhaust gas sucked in the precursor region and the reactance region.

Description

Atomic layer deposition apparatus that separates and discharges exhaust gas {EXHAUST GAS SEPARATING EXHAUSTED ATOMIC LAYER DEPOSITION APPARATUS}

The present invention is to provide an atomic layer deposition apparatus capable of separating and exhausting exhaust gas in a semi-batch type atomic layer deposition apparatus for simultaneously forming a thin film on a plurality of substrates.

In general, a method of depositing a thin film having a predetermined thickness on a substrate such as a semiconductor substrate or glass includes physical vapor deposition (PVD) using physical collision, such as sputtering, and chemical reaction using a chemical reaction. Chemical vapor deposition (CVD) and the like. Recently, as the design rules of semiconductor devices are drastically fined, thin films of fine patterns are required, and the step height of regions where thin films are formed is also very large. Due to this trend, the use of atomic layer deposition (ALD), which is capable of forming a very uniform pattern of atomic layer thickness very uniformly and has excellent step coverage, has been increasing.

ALD is similar to the general chemical vapor deposition method in that it uses chemical reactions between gas molecules. However, in contrast to conventional CVD in which multiple gas molecules are simultaneously injected into a chamber to deposit the reaction product generated on the substrate, ALD injects a gas containing one source material into the chamber to chemisorb the heated substrate. There is a difference in that a product by chemical reaction between the source materials is deposited on the substrate surface by injecting a gas containing another source material into the chamber. These ALDs are widely attracting attention because they have the advantage of being able to deposit pure thin films having excellent step coverage characteristics and low impurity contents.

A semi-batch type is disclosed in which a deposition process is performed simultaneously on a plurality of substrates to improve throughput in an atomic layer deposition apparatus. In general, the semi-batch type atomic layer deposition apparatus has a region in which different kinds of deposition gases are injected, and the substrate is sequentially passed through each region by the high speed rotation of the gas injection unit or the susceptor. Chemical reactions occur between and the reaction products are deposited.

According to embodiments of the present invention to provide an atomic layer deposition apparatus capable of separating and exhausting the exhaust gas in the eight-quarter atomic layer deposition apparatus.

The gas injection module of the atomic layer deposition apparatus according to the embodiments of the present invention, in the atomic layer deposition apparatus to form a thin film by providing a plurality of different deposition gases to a plurality of substrates, the process chamber, the process chamber A susceptor provided therein for mounting a plurality of substrates, a gas injection module provided in an upper portion of the process chamber to provide a plurality of deposition gases to the substrate, and provided in the gas injection module to suck exhaust gas from the upper portion of the substrate; It is configured to include a top exhaust portion for discharging and an exhaust discharge portion provided on the process chamber to discharge the exhaust gas sucked from the tower exhaust portion. Here, the exhaust discharge portion is formed to separate and discharge the exhaust gas sucked in the precursor region and the reactance region.

According to one aspect, the gas injection module has eight shower heads in which the different deposition gas is injected radially disposed, the first shower head to which the precursor gas is injected and the second shower head and the purge gas is injected The third shower head is injected is alternately disposed, the exhaust discharge portion may include an exhaust duct formed with a precursor exhaust passage connected to the first shower head and a reactance exhaust passage connected to the second shower head.

According to one aspect, the exhaust duct may be formed as a flow path independent of the precursor exhaust passage and the reactance exhaust passage. The tower exhaust unit includes a plurality of exhaust holes formed to surround circumferences of the first shower head and the second shower head, respectively, and an exhaust port formed outside the first and second shower heads. A cursor exhaust passage may be connected to an exhaust port of the first shower head, and the reactance exhaust channel may be connected to an exhaust port of the second shower head. In addition, the exhaust discharge unit may be provided with two exhaust ducts, and each precursor exhaust passage and a reactance exhaust passage may be respectively formed in the exhaust duct. In addition, the exhaust exhaust portion is provided with an exhaust converging tube for converging the exhaust gas discharged from the exhaust duct to the outside, the exhaust converging tube may be connected at the central portion or one end of each exhaust duct.

According to one aspect, the exhaust discharge portion, the exhaust duct may be formed in a form symmetrical with each other with respect to the center of the process chamber. The exhaust exhaust unit may be formed to have a shape and a length in which the precursor exhaust channel and the reactance exhaust channel are symmetric with each other.

As described above, according to the embodiments of the present invention, the exhaust gas in the precursor region and the reactance region may be separated and discharged in the atomic layer deposition apparatus for injecting the deposition gas into eight quarters.

In addition, it is possible to prevent particles from being lowered by preventing particle generation due to mixing of the deposition gas in the exhaust pipe for exhausting the exhaust gas.

1 is a perspective view of an atomic layer deposition apparatus according to an embodiment of the present invention.
FIG. 2 is a plan view of a gas injection module in the atomic layer deposition apparatus of FIG. 1.
3 is a perspective view of an exhaust outlet according to an embodiment of the present invention.
4 is a perspective view illustrating a modified embodiment of the exhaust discharge unit of FIG. 3.
FIG. 5 is a longitudinal cross-sectional view of an atomic layer deposition apparatus equipped with an exhaust emission unit of FIG. 4.
FIG. 6 is a graph showing a gas concentration distribution when an exhaust discharge part according to Embodiment 1 shown in FIG. 3 is applied, and FIG. 8 is a graph showing a gas penetration amount.
FIG. 7 is a graph showing a gas concentration distribution when an exhaust discharge part according to Embodiment 2 shown in FIG. 4 is applied, and FIG. 9 is a graph showing the gas penetration amount.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings, but the present invention is not limited to or limited by the embodiments. In describing the present invention, a detailed description of well-known functions or constructions may be omitted for clarity of the present invention.

Hereinafter, the atomic layer deposition apparatus 100 and the exhaust discharge unit 160 according to embodiments of the present invention will be described in detail with reference to FIGS. 1 and 5. For reference, FIG. 1 is a perspective view illustrating an atomic layer deposition apparatus 100 according to an embodiment of the present invention, and FIG. 2 is a perspective view of the gas injection module 103 in the atomic layer deposition apparatus 100 of FIG. 1. Top view. 3 is a perspective view of the exhaust discharge unit 160 of FIG. 1. 4 is a perspective view illustrating a modified embodiment of the exhaust discharge unit 160 of FIG. 3, and FIG. 5 is a longitudinal cross-sectional view of an atomic layer deposition apparatus including the exhaust discharge unit of FIG. 4.

Referring to the drawings, an atomic layer deposition apparatus (ALD) 100 includes a gas injection module 103 for providing a plurality of different deposition gases to a plurality of substrates 10.

For reference, the atomic layer deposition apparatus 100 described in the present embodiments is a semi-batch type in which deposition is performed simultaneously on a plurality of substrates 10 in order to improve throughput and quality. batch type) can be used. In the atomic layer deposition apparatus 100, a plurality of substrates 10 are disposed in the process chamber 101 parallel to the gas injection module 103 on the susceptor 102, and the susceptor 102 rotates. Accordingly, a predetermined thin film is deposited as the substrate 10 passes through an area in which different types of gases injected from the gas injection module 103 are injected while revolving with respect to the gas injection module 103. Here, the detailed technical configuration of the process chamber 101 and the susceptor 102, etc. constituting the atomic layer deposition apparatus 100 can be understood from known techniques and are not the gist of the present invention, and thus detailed descriptions and illustrations are omitted. Only the main components are briefly described.

Meanwhile, in the present embodiment, the substrate 10 to be deposited may be a silicon wafer. However, the substrate 10 of the present invention is not limited to the silicon wafer, and the substrate 10 includes glass used for a flat panel display device such as a liquid crystal display (LCD) and a plasma display panel (PDP). The transparent substrate 10 may be. In addition, the shape and size of the substrate 10 is not limited by the drawings, and may have substantially various shapes and sizes, such as a circle and a rectangle.

In addition, in the present embodiment, the term 'source gas' is a gas containing a source material for depositing a predetermined thin film, and a precursor gas S containing a constituent element constituting the thin film. ) And a reactant gas (R) which chemically reacts with the precursor gas (S) to form a thin film according to a predetermined reaction product, and the precursor gas (S) and reactance gas (R). It may include a purge gas (P) for removing unreacted gas and residual gas.

In addition, in the present embodiment, the term 'hole' may include not only a hole having a circular cross section but also a hole or a slit having a polygonal cross section.

Hereinafter, for convenience of explanation, one kind of precursor gas S and one kind of reactance gas R are provided, and a purge gas P is provided between the precursor gas S and the reactance gas R. It will be described taking an atomic layer deposition apparatus 100 for depositing a thin film by providing an example. However, the present invention is not limited to the above-described embodiment, and the gas injection module 103 may provide at least two or more kinds of precursor gases to deposit a multicomponent thin film including two or more elements. In addition, at least one of the first and second shower heads 131 and 133 may have a dual structure so as to alternately provide two or more kinds of deposition gases.

Referring to the drawings, the gas injection module 103 is formed to inject two or more different deposition gases, and to provide a predetermined amount of deposition gas for the same time for the substrate 10 to revolve. The gas injection module 103 has a gas injection housing 130 forming an appearance and forming an upper portion of the process chamber 101, and a surface facing the substrate 10 from the gas injection housing 130, that is, the lower surface. A plurality of shower holes 131a and 133a (see FIG. 5) are formed therein, and a plurality of shower heads 131, 133, and 135 are provided to spray the deposition gas onto the substrate 10.

The gas injection module 103 includes a plurality of shower heads 131, 133, and 135 which spray different kinds of deposition gases, respectively, and each shower head 131, 133, and 135 is a rotational direction of the substrate 10. Are disposed radially along. Here, the gas injection module 103 is formed such that the plurality of shower heads 131, 133, 135 have the same area to each other so as to uniformly provide the deposition gas to the substrate 10. The 131, 133, and 135 have a fan shape divided at the same angle with respect to the center of the gas injection housing 130, and eight shower heads 131, 133, and 135 may be provided. However, the present invention is not limited by the drawings, and the shape and size of the shower heads 131, 133, and 135 may be changed in various ways.

In the present embodiment, for convenience of description, the shower head provided with the precursor gas S in the gas injection module 103 is referred to as a 'first shower head 131', and the shower in which the reactance gas R is provided. The head is provided between the second showerhead 133 and the first and second showerheads 131 and 133 and the showerhead provided with the purge gas P is referred to as the 'third showerhead 135'. It is called.

In the gas injection module 103, a plurality of exhaust holes 151 are formed along the boundaries of the shower heads 131, 133, and 135 to discharge the exhaust gas from the inside of the process chamber 101 through the upper portion of the substrate 10. Top exhaust unit 150 is provided.

The tower exhaust unit 150 includes a plurality of exhaust holes 151 formed around the first shower head 131 and the second shower head 133. The tower exhaust unit 150 inhales and discharges exhaust gas. Exhaust exhaust unit 160 is connected. For example, the top exhaust 150 may have a substantially 'V' or 'U' shape surrounding the first and second showerheads 131 and 133, and the vertex portions may be disposed to face each other. Meanwhile, the top exhaust part 150 of the present invention is not limited by the drawings, and the shape, size, and number of the exhaust holes 151 may be changed in various ways. In addition, the top exhaust part 150 may have exhaust holes 151 having different sizes according to the displacement, or may arrange the exhaust holes 151 at different intervals.

The tower exhaust unit 150 has an exhaust port 153 for discharging the exhaust gas from one side of the outer portion of the gas injection module 103. For example, the exhaust port 153 may have one exhaust port 501, 502, 503, and 504 formed at a central portion at each outer edge of each of the first and second shower heads 131 and 133. However, the present invention is not limited by the drawings, and the position, size, and shape of the exhaust port 153 may be changed in various ways.

Meanwhile, the exhaust gas sucked in the region where the precursor gas is injected (hereinafter referred to as 'precursor region S') and the region where the reactant gas is injected (hereinafter referred to as 'reactance region R') Since the exhaust gas contains unreacted precursor gas and reactance gas, the unreacted gas contained in each exhaust gas is exhausted in the process of exhausting the exhaust gas sucked and exhausted in the precursor region and the reactance region. Particles can be formed by reacting with each other. In FIG. 2, the region between the precursor region and the reactance region is a region where the purge gas is injected and is referred to as a 'purge region P'.

In the present embodiment, in order to prevent particles generated by reacting the precursor gas and the reactant gas included in the exhaust gas in the process of discharging the exhaust gas as described above, the tower exhaust part 150 may be formed in the precursor region S and The exhaust gas sucked in the reactance region R is connected to an exhaust discharge unit 160 for discharging through the separated exhaust flow path so as to be separated and discharged through independent flow paths.

In detail, the exhaust discharge unit 160 is provided above the process chamber 101 or the upper portion of the atomic layer deposition apparatus 100, and independently formed exhaust passages 611, 613, to separate and discharge the exhaust gas. Exhaust ducts 161 and 162 with 621 and 623 are provided. In addition, according to the present embodiment, the gas injection module 103 includes eight shower heads 131, 133, and 135 disposed radially, and includes a first shower head 131, a third shower head 135, and a third shower head 131. Two shower heads 133 are alternately arranged in the form of eight quarters. The exhaust discharge unit 160 is connected to exhaust ducts 161 and 162 to suck and discharge the exhaust gas in a region in which the same deposition gas is injected.

For example, the exhaust discharge unit 160 includes first and second exhaust ducts 161 and 162 provided on the process chamber 101, and a first shower head in the exhaust ducts 161 and 162. 131 and precursor exhaust passages 611 and 621 which are connected to each other and reactance exhaust passages 613 and 623 which are connected to the second shower head 133 are formed, respectively. In addition, the exhaust discharge unit 160 is connected to the exhaust converging pipe 163 and the exhaust discharge pipe 165 which are separated through the exhaust ducts 161 and 162 to converge the exhaust gas sucked and discharged to the outside.

Meanwhile, the exhaust ducts 161 and 162 are formed in a substantially semicircular shape in the upper portion of the process chamber 101, and the precursor exhaust passages 611 and 621 and the reactance exhaust passages 613 and 623 are respectively the exhaust ducts 161 and 162. ) It is formed in the form of 1/4 arc line inside. And it may be formed in a symmetrical form with each other to be connected to one exhaust converging pipe 163 and the exhaust discharge pipe (165).

The exhaust ducts 161 and 162 include an exhaust inlet 511 connected to the exhaust port 501 of the first shower head 131, and an exhaust inlet 531 for introducing the sucked exhaust gas into the exhaust converging pipe 163. Is formed. Similarly, exhaust inlets 502, 503, and 504 connected to the respective exhaust ports 502, 503, and 504 of the remaining first and second shower heads 131 and 133, respectively, in the precursor exhaust passages 621 and the reactance exhaust passages 613 and 623. Exhaust inlets 532, 533, and 534 for introducing exhaust gas into the 512, 513, and 514 and the exhaust converging pipe 163 are formed, respectively.

Meanwhile, the present invention is not limited by the drawings, and the shapes of the exhaust ducts 161 and 162 and the exhaust passages 611, 613, 621, and 623 in the exhaust discharge unit 160 may be changed in various ways. .

For example, as illustrated in FIG. 4, an exhaust discharge part 260 in which exhaust ducts 261 and 262 and exhaust flow paths 631, 633, 641 and 643 are formed may be formed.

For reference, FIG. 4 is a perspective view illustrating an exhaust discharge unit 260 according to a modified embodiment of the exhaust discharge unit 160 illustrated in FIG. 3, and FIG. 5 is provided with the exhaust discharge unit 260 of FIG. 4. Is a longitudinal sectional view of the atomic layer deposition apparatus 100 thus obtained. Since the embodiments described below are substantially the same except for the shape of the exhaust duct and the embodiment described in FIGS. 1 to 3, the same reference numerals are used for the same components, but the number 200 is used. Duplicate explanations are omitted.

Referring to the drawings, the exhaust outlet 260 is a semi-circular shape, as shown in FIG. 4, to bundle and exhaust the exhaust gas in the showerheads 131, 133, and 135 which discharge the precursor gas and the reactant gas. Exhaust passages 631, 633, 641, and 643 are formed along the exhaust ducts 261 and 262 and the exhaust ducts 261 and 262 to separate and discharge the precursor gas and the reactance gas independently. For example, the exhaust exhaust unit 260 includes an exhaust converging pipe 263 and an exhaust exhaust pipe 265 on one side of the process chamber 101, and exhaust ducts 261 and 262 are provided on the exhaust converging pipe 263. And are each connected at one side. Due to the connection relationship between the exhaust ducts 261 and 262 and the exhaust converging pipe 263, the exhaust ducts 261 and 262 have the precursor exhaust passages 631 and 641 and the reactance exhaust passages 633 and 643 therein. It is arranged in parallel in double.

Here, reference numerals 521, 522, 523, 524, 541, 542, 543, and 544 denote the precursor exhaust passages 631 and 641 and the reactance exhaust passages 633 and 643, respectively. Exhaust inlet pipes 541, 522, 523 and 524 that suck exhaust gas through exhaust ports 501, 502, 503 and 504 of 131 and 133 and exhaust inlet pipes 541 connected to the exhaust converging pipe 263. 542, 543, and 544).

However, the present invention is not limited by the drawings, and the shapes of the exhaust ducts 261 and 262 and the exhaust passages 631, 633, 641, and 643 in the exhaust discharge unit 260 may be changed in various ways.

Meanwhile, in the atomic layer deposition process, the substrate 10 revolves with respect to the gas injection module 103 at a constant speed. The substrate 10 is affected by the centrifugal force due to the revolving of the substrate 10 and the susceptor 102. Vortex and stagnation of exhaust gas may occur in the central portion of the gas injection module 103 at the top. In the present embodiment, the central portion of the gas injection module 103 refers to a region near the center of the gas injection module 103. When the substrate 10 is seated on the susceptor 102, the substrate 10 The area corresponding to this unsecured area is referred to. According to the present embodiment, the gas injection module 103 includes the top exhaust unit 150 and the exhaust discharge unit 160, whereby the exhaust gas is stagnated in the region corresponding to the central portion of the susceptor 102. This can effectively prevent the phenomenon.

In addition, according to the present exemplary embodiment, the top exhaust part 150 has an exhaust hole 151 effectively separating the precursor region and the reactance region from each other, and the deposition gas, particularly the precursor gas, The penetration of reactance gas can be effectively prevented. And, by preventing the deposition and stagnation of the deposition gas and exhaust gas in the central portion of the susceptor 102 to prevent unnecessary deposition in the central portion of the susceptor (102), contaminating due to deterioration of the thin film quality or particle generation It can prevent occurrence. In addition, according to the present embodiment, since the exhaust gas is discharged through independent discharge lines 161 and 163, the precursor gas and the reactance gas included in the exhaust gas are mixed with each other in the process of discharging the exhaust gas. The reaction can effectively prevent the generation of particles.

Hereinafter, the effects according to the first and second embodiments described above will be described with reference to FIGS. 6 to 9. For reference, FIG. 6 is a graph illustrating a gas concentration distribution when the exhaust discharge unit 160 according to the first embodiment shown in FIG. 3 is applied, and FIG. 7 is the second embodiment shown in FIG. It is a graph showing the gas concentration distribution when the exhaust discharge unit 160 is applied. 8 and 9 are graphs showing the gas penetration amount in the precursor region and the reactance region in Examples 1 and 2. FIG.

6 to 9, it can be seen that the penetration rate of the exhaust gas, particularly the precursor gas, to the central portion of the susceptor 102 is significantly lowered by binding the precursor gas and the reactance gas together. 6 to 9, although the penetration rate of the exhaust gas to the center portion of the susceptor 102 in both Examples 1 and 2 is low, the case of Example 1 is higher than that of Example 2 in both cases. It can be seen that the concentration distribution of is uniform. In other words. In the case of Example 1, it can be seen that more uniform and favorable thin film quality can be obtained by considering the balance of each region.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments. In addition, the present invention is not limited to the above-described embodiments, and various modifications and variations are possible to those skilled in the art to which the present invention pertains. Therefore, the spirit of the present invention should not be limited to the above-described embodiments, and all the things that are equivalent to or equivalent to the scope of the claims as well as the claims to be described later belong to the scope of the present invention.

10: substrate
100: atomic layer deposition apparatus
101: process chamber
102: susceptor
103: gas injection module
131, 133, 135: showerhead
131a, 133a: injection hole
150: top vacuum
151: exhaust hole
153, 501, 502, 503, 504: exhaust vent
160, 260: exhaust exhaust
161, 162, 261, 262: exhaust duct
163: exhaust converging pipe
165: exhaust pipe
511, 512, 513, 514, 521, 522, 523, 524: exhaust intake
531, 532, 533, 534, 541, 542, 543, 544: exhaust inlet
611, 621, 631, 641: precursor exhaust passage
613, 623, 633, 643: reactance exhaust channel

Claims (8)

An atomic layer deposition apparatus for forming a thin film by providing a plurality of different deposition gases to a plurality of substrates,
Process chambers;
A susceptor provided in the process chamber to mount a plurality of substrates;
A gas injection module provided on the process chamber to provide a plurality of deposition gases to the substrate;
The gas injection module is provided in the upper part of the substrate to suck and discharge the exhaust gas, the first shower head is sprayed with the precursor gas, the second shower head is injected with the reactant gas and the third shower head is injected with the purge gas A tower exhaust part disposed alternately and including a plurality of exhaust holes formed to surround the first shower head and the second shower head, respectively, and an exhaust port formed outside the first and second shower heads; And
Is provided above the process chamber to discharge the exhaust gas sucked from the tower exhaust portion, is formed to separate and discharge the exhaust gas sucked in the precursor region and the reactance region, the precursor exhaust connected to the exhaust port of the first shower head An exhaust discharge part including an exhaust duct having a flow path and a reactance exhaust path connected to an exhaust port of the second shower head;
Atomic layer deposition apparatus comprising a.
The method of claim 1,
The gas injection module is an atomic layer deposition apparatus in which eight shower heads in which different deposition gases are injected are arranged radially.
The method of claim 1,
And the exhaust duct is formed as a separate flow path between the precursor exhaust flow path and the reactance exhaust flow path.
delete The method of claim 1,
The exhaust exhaust unit is provided with two exhaust ducts, each of the exhaust ducts each of the precursor exhaust passage and reactance exhaust passage are formed respectively.
The method of claim 5,
The exhaust exhaust unit is provided with an exhaust converging pipe for converging the exhaust gas discharged from the exhaust duct to the outside,
And the exhaust converging pipes are connected at a central portion or at one end of each exhaust duct.
The method of claim 1,
The exhaust discharge unit,
And the exhaust ducts are symmetrical with respect to the center of the process chamber.
The method of claim 7, wherein
The exhaust discharge unit,
And the precursor exhaust passage and the reactance exhaust passage have a shape and a length that are symmetrical to each other.

Images