KR101972389B1 - Gas supply module for atomic layer deposition - Google Patents

Gas supply module for atomic layer deposition Download PDF

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Publication number
KR101972389B1
KR101972389B1 KR1020170048384A KR20170048384A KR101972389B1 KR 101972389 B1 KR101972389 B1 KR 101972389B1 KR 1020170048384 A KR1020170048384 A KR 1020170048384A KR 20170048384 A KR20170048384 A KR 20170048384A KR 101972389 B1 KR101972389 B1 KR 101972389B1
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South Korea
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gas
gas supply
supply unit
diffusion region
diffusion
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KR1020170048384A
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Korean (ko)
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KR20180115912A (en
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최학영
최영태
김동원
김상훈
김근식
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주식회사 넥서스비
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Priority to KR1020170048384A priority Critical patent/KR101972389B1/en
Priority to PCT/KR2018/004393 priority patent/WO2018190696A1/en
Publication of KR20180115912A publication Critical patent/KR20180115912A/en
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C23C16/45548—Atomic layer deposition [ALD] characterized by the apparatus having arrangements for gas injection at different locations of the reactor for each ALD half-reaction
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45559—Diffusion of reactive gas to substrate

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

The gas supply module for atomic layer deposition according to an embodiment of the present invention includes a case and an atomic layer deposition gas including a source gas, a purge gas, and a reactive gas, provided inside the case, And the gas supply unit is formed in a multi-stage shape with respect to the height direction of the case, and the atomic layer deposition gas is diffused from one side to the other side through diffusion holes provided for each stage .

Description

GAS SUPPLY MODULE FOR ATOMIC LAYER DEPOSITION FOR ATOMIC LAYER DEPOSITION

The present invention relates to atomic layer deposition techniques used in semiconductor or display device fabrication, and more particularly to a gas supply module for atomic layer deposition.

In general, a method of depositing a thin film having a predetermined thickness on a substrate such as a semiconductor substrate or a glass substrate includes physical vapor deposition (PVD) using physical collision such as sputtering, And chemical vapor deposition (CVD).

In recent years, as the design rule of a semiconductor device becomes very minute, a thin film of a fine pattern is required and a step of a region where a thin film is formed is greatly increased, so that a fine pattern of atomic layer thickness can be formed very uniformly There is an increasing use of atomic layer deposition (ALD) as well as excellent step coverage.

This atomic layer deposition method is similar to the general chemical vapor deposition method in that it utilizes a chemical reaction between gas molecules. However, unlike conventional CVD in which a plurality of gaseous molecules are injected into a process chamber at the same time and the resulting reaction product is deposited on the substrate, the atomic layer deposition method injects a gas containing one source material into the process chamber, There is a difference in that a product by chemical reaction between the source material on the substrate surface is deposited by adsorbing on the substrate and then injecting a gas containing another source material into the process chamber.

However, the atomic layer deposition method currently being investigated has a problem that the productivity is low because the atomic layer deposition method can not be uniformly performed in spraying the deposition gas onto the substrate. Therefore, a gas supply module capable of uniformly spraying the deposition gas to maintain the high quality of the atomic layer deposition thin film but improve the productivity is proposed.

Korean Patent Publication No. 10-2011-0076386 (Jul. 2011)

An embodiment of the present invention provides a gas supply module for atomic layer deposition capable of uniformly injecting gas into a substrate used for semiconductor or display device manufacture through a plurality of holes through which gas is passed stepwise.

Also, in one embodiment of the present invention, a gas supply module for atomic layer deposition capable of preventing introduction of a gas to be injected by forming a gas barrier using a gas when the gas is injected into the substrate is provided.

The problems to be solved by the present invention are not limited to the above-mentioned problem (s), and another problem (s) not mentioned can be clearly understood by those skilled in the art from the following description.

The gas supply module for atomic layer deposition according to an embodiment of the present invention includes a case and an atomic layer deposition gas provided inside the case and including a source gas, a purge gas, and a reaction gas, And the gas supply unit is formed in a multi-stage shape with respect to a height direction of the case, and the atomic layer deposition gas is diffused from one side to the other side through diffusion holes provided for each stage, .

Further, the gas supply unit according to an embodiment of the present invention includes a source gas supply unit for injecting the source gas, a purge gas supply unit for supplying the purge gas, and a reaction gas supply unit for injecting the reaction gas, The supply part, the purge gas supply part, and the reaction gas supply part may be arranged side by side at regular intervals along the longitudinal direction of the case.

According to an embodiment of the present invention, the gas supply unit may include a first gas diffusion region, which is a space formed on the gas supply unit, a source gas supply unit, and a reactive gas supply unit, And a third gas diffusion region formed in the source gas supply unit and the reaction gas supply unit, the third gas diffusion region being a space connected to the second gas diffusion region.

According to an embodiment of the present invention, the first to third gas diffusion regions may include a first gas diffusion region, a second gas diffusion region, and a second gas diffusion region provided between the first gas diffusion region and the second gas diffusion region, A second gas barrier layer provided between the third gas diffusion regions and a third barrier rib provided below the third gas diffusion region, wherein the diffusion holes are formed in a plurality of .

In addition, the diffusion holes may be formed at regular intervals along the longitudinal direction of the first to third barrier ribs according to an embodiment of the present invention.

In addition, the diffusion holes according to the embodiment of the present invention may be formed to face each other at corresponding positions of one side surface and the other side surface of each partition wall.

In addition, the number of the diffusion holes according to an embodiment of the present invention can satisfy the following expression.

[Equation]

The number of diffusion holes formed in the first bank, the number of diffusion holes formed in the second bank, and the number of diffusion holes formed in the third bank.

The number of diffusion holes formed in the first bank is 3 to 5, the number of diffusion holes formed in the second bank is 8 to 12, and the number of diffusion holes formed in the third bank is 240 to 260 pieces.

In addition, the gas supply module for atomic layer deposition according to an embodiment of the present invention may further include an outer purge gas supply unit disposed on the outer periphery so as to surround the gas supply unit, the outer purge gas supply unit being communicated with each other.

The distance between the purge gas supply unit and the deposition target substrate may be set to a distance between the reaction gas supply unit and the deposition target substrate, The distance between the source gas supply unit and the deposition target substrate may be smaller than the distance between the source gas supply unit and the deposition target substrate.

The details of other embodiments are included in the detailed description and the accompanying drawings.

According to an embodiment of the present invention, gas can be uniformly injected into a substrate used for manufacturing a semiconductor or a display device through a plurality of holes through which gas is passed stepwise.

Further, according to an embodiment of the present invention, when the gas is injected into the substrate, a gas barrier made of a gas is formed, thereby preventing the introduction of the injected gas.

1 is a perspective view of a gas supply module for atomic layer deposition according to an embodiment of the present invention, showing a top cross-section of a gas supply module.
FIG. 2 is a plan view of a gas supply module for atomic layer deposition according to an embodiment of the present invention, showing a lower section of a gas supply module. FIG.
3 is a plan view showing a cross-section AA 'of the gas supply module of FIG.
4 is a plan view showing an internal structure of a gas supply module in an embodiment of the present invention.
FIGS. 5A through 5C are graphs showing experimental results on the flow of a fluid according to a separation distance between a purge gas supply unit and a substrate to be deposited, in an embodiment of the present invention. FIG.
FIG. 6 is a view illustrating a process of spraying a deposition gas through a gas diffusion region of a gas supply unit according to an embodiment of the present invention. Referring to FIG.

BRIEF DESCRIPTION OF THE DRAWINGS The advantages and / or features of the present invention, and how to accomplish them, will become apparent with reference to the embodiments described in detail below with reference to the accompanying drawings. It should be understood, however, that the invention is not limited to the disclosed embodiments, but is capable of many different forms and should not be construed as limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, To fully disclose the scope of the invention to those skilled in the art, and the invention is only defined by the scope of the claims. Like reference numerals refer to like elements throughout the specification.

Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings.

The atomic layer deposition equipment gas module according to an embodiment of the present invention can form various thin film layers. For example, at least one thin film layer of a metal thin film layer, an oxide thin film layer, a nitride thin film layer, a carbide thin film layer, and a sulfide thin film layer can be formed. According to one embodiment, the source gas for forming the metal thin film layer is one of TMA (TriMethyl Aluminum), TEA (Tri Ethyl Aluminum) and DMACl (Di Methyl Aluminum Chloride), and the reactive gas is oxygen gas and ozone gas ≪ / RTI > At this time, the purge gas may be any one of argon (Ar), nitrogen (N2), and helium (He) or a mixture of two or more gases. According to another embodiment, the source gas for forming the silicon thin film layer may be one of silane (SiH4), disilane (Si2H6) and silicon tetrafluoride (SiF4) containing ricons, May be one of an oxygen gas and an ozone gas. At this time, the purge gas may be any one of argon (Ar), nitrogen (N2), and helium (He), or a mixture of two or more gases. At this time, the source gas, the purge gas, and the reaction gas are not limited to these, and may be changed according to the needs of those skilled in the art.

A gas supply module for atomic layer deposition according to an embodiment of the present invention is a module for injecting gas into a substrate to be deposited for depositing an atomic layer thin film and includes a case and a gas supply unit provided inside the case, . A suction module (not shown) for suctioning the gas may be mounted on the upper portion of the case. In this embodiment, five suction modules may be mounted. The gas supply unit injects an atomic layer deposition gas containing a source gas, a purge gas, and a reactive gas into another region of the substrate to be deposited. Hereinafter, with reference to Figs. 1 to 4, the gas supply unit will be described in more detail.

FIG. 1 is a perspective view illustrating a gas supply module for atomic layer deposition according to an embodiment of the present invention, and FIG. 2 is a cross- FIG. 3 is a plan view showing a cross-section taken along the line AA 'of the gas supply module of FIG. 1, and FIG. 4 is a cross- Fig. 7 is a plan view showing the internal structure of the supply module.

1 and 2, the gas supply unit 120 of the gas supply module includes a source gas supply unit 122 for injecting a source gas, a purge gas supply unit 124 for supplying a purge gas, And a supply unit 126. Each of the gas supply parts 120 may be arranged in a line with each other in the case 110. That is, the source gas supply unit 122, the purge gas supply unit 124, and the reaction gas supply unit 126 may be arranged at regular intervals along the longitudinal direction of the case 110.

Meanwhile, in the present embodiment, the outer purge gas supply unit 128 may be disposed outside the gas supply unit 120 so as to surround the gas supply unit 120. The outer purge gas supply unit 128 may be formed to communicate with each other along the circumferential direction of the gas supply unit 120. Accordingly, the purge gas injected through the outer purge gas supply part 128 serves as a gas barrier, so that the inner space in which the gas is supplied and the outer space that is not supplied can be separated. That is, it is possible to provide an environment in which a high-quality atomic layer deposition is performed by isolating the internal space in which the gas is supplied from the external environment. In addition, atomic layer deposition can be performed at atmospheric pressure rather than in a vacuum environment, and the roll to roll method can be applied.

For reference, the outer purge gas supply unit 128 may inject the purge gas toward the deposition target substrate W through the injection hole 128a provided on the other side as shown in FIG.

Referring to FIG. 3, the gas supply unit 120 may include a gas supply source for supplying gas to one side, for example, a gas supply source, and a substrate W to be deposited on the other side, .

A stage 130 including a seating part (not shown) on which the substrate is placed may be provided under the substrate W to be deposited. The stage 130 can rotate the deposited substrate W to be deposited. Accordingly, since the substrate W to be deposited passes under the gas supply unit 120 by the rotation of the stage 130, the atomic layer thin film can be deposited on the substrate W to be deposited by receiving the atomic layer deposition gas have. It is needless to say that the substrate W to be deposited may have various shapes as well as a circular shape like a wafer.

The gas supply unit 120 includes first and second source gas supply units 122a and 122b and first to fourth purge gas supply units 124a and 124b and 124c and 124d and first to third reaction gas supply units 126a and 126b , 126c. At this time, the first and second source gas supply units 122a and 122b, the first to fourth purge gas supply units 124a, 124b, 124c, and 124d, and the first to third reaction gas supply units 126a, 126b, And can be disposed along the rotational direction of the substrate W to be deposited. Specifically, the first reaction gas supply unit 126a, the first purge gas supply unit 124a, the first source gas supply unit 122a, the second purge gas supply unit 124b, the second reaction gas supply unit 126b, The purge gas supply unit 124c, the second source gas supply unit 122b, the fourth purge gas supply unit 124d, and the third reaction gas supply unit 126c. For reference, the outer purge gas supply unit 128 may be disposed at the beginning and end of the arrangement order. The first purge gas supply unit 124a, the first source gas supply unit 122a, the second purge gas supply unit 124b, the second purge gas supply unit 124b, the second purge gas supply unit 124b, The third purge gas supply section 124c, the second source gas supply section 122b, the fourth purge gas supply section 124d, the third reaction gas supply section 126c and the outer purge gas supply section 128 .

The first and second source gas supply units 122a and 122b may receive the source gas from a source gas supply source (not shown) and may spray the supplied source gas toward the substrate W to be deposited. The first to fourth purge gas supply units 124a, 124b, 124c and 124d are provided with a purge gas from a purge gas supply source (not shown) and can spray the supplied purge gas toward the substrate W to be deposited. Also, the first to third reaction gas supply units 126a, 126b, and 126c may receive the reaction gas from a reaction gas supply source (not shown) and may spray the supplied reaction gas toward the substrate W to be deposited.

According to the present embodiment, each gas supply unit 120 may be configured to inject more deposition gas at the peripheral portion than the center portion of the stage 130. For example, the jetting port of each gas supply unit 120 may be larger at the peripheral portion than at the center portion of the stage 130. This is taken into consideration that the linear velocity of the peripheral portion located radially outward of the center portion of the stage 130 is larger when the angular velocity of the stage 130 is the same. A certain atomic layer thin film can be deposited on the region of the substrate W to be deposited located at the center of the stage 130 or the region of the substrate W to be deposited located at the periphery of the stage 130.

An exhaust port 122c for exhausting the source gas injected from the first source gas supply section 122a may be disposed adjacent to both sides of the first source gas supply section 122a, And an exhaust port 122c for exhausting the source gas injected from the second source gas supply portion 122b may be disposed adjacent to each other. Each exhaust port 122c can prevent the source gas from entering another region outside the selected injection region by collecting the injected source gas in the direction opposite to the injection direction. Exhaust openings 126d for exhausting the reactant gas injected from the first reactant gas supplying section 126a may be disposed adjacent to both sides of the first reactant gas supplying section 126a and on both sides of the second reactant gas supplying section 126b, An exhaust port 126d for exhausting the reaction gas injected from the second reaction gas supply unit 126a may be disposed adjacent to the third reaction gas supply unit 126c, And an exhaust port 126d for exhausting the reaction gas may be disposed adjacent to each other. Each exhaust port 126d can prevent the reaction gas from entering another region outside the selected injection region by collecting the injected reaction gas in the direction opposite to the injection direction.

The exhaust ports 122c and 126d can communicate with a bar dry pump (not shown). By the driving of the bar dry pump, the source gas and / or the reactive gas out of the corresponding region of the substrate among the source gas and / or reactive gas injected in the top pumping manner can be exhausted.

Referring to FIG. 4, the gas supply unit 120 may have different heights from each other with respect to the height direction of the case 110. Specifically, the height of the purge gas supply unit 124 may be higher than the height of the source gas supply unit 122 and the height of the reaction gas supply unit 126. In other words, the distance h2 between the purge gas supply unit 124 and the substrate W to be deposited is determined by the distance h1 between the reaction gas supply unit 126 and the substrate W to be deposited and the distance h1 between the source gas supply unit 122 May be smaller than the separation distance (h2) between the deposition target substrates (W). That is, a physical barrier may be formed due to a gap between the purge gas supply unit 124 and the source gas supply unit 122 and the reaction gas supply unit 126. [ Accordingly, the purge gas injected from the purge gas supply unit 124 serves as an air curtain, thereby preventing the source gas and the reaction gas from being mixed.

In this regard, in the present embodiment, an experiment was conducted to determine the flow of the fluid according to the separation distance h2 between the purge gas supply unit 124 and the substrate W to be deposited. 5A to 5C, the separation distance h2 between the purge gas supply unit 124 and the deposition target substrate W is experimentally measured. Specifically, as shown in FIG. 5A, when the separation distance h2 is large 5b, the experiment is divided into the case where the separation distance h2 is normal and the case where the separation distance h2 is small as shown in FIG. 5c. As a result of the experiment, it was confirmed that the flow of fluid becomes active when the separation distance h2 between the purge gas supply part 124 and the substrate W to be deposited is set to be normal. The distance h2 between the purge gas supply unit 124 and the substrate W to be deposited is set to a distance h1 between the source gas supply unit 122 and the deposition target substrate W, Deposition can be efficiently performed by appropriately setting the gap between the deposition target substrate W and the separation distance h1 so as not to be too large or too small. 5A to 5C are graphs showing experimental results on the flow of fluid according to the separation distance h2 between the purge gas supply unit 124 and the substrate W to be deposited in an embodiment of the present invention .

The gas supply unit 120 may have a multi-stage shape with respect to the height direction of the case 110. That is, the gas supply unit 120 is provided inside the case 110, for example, at a predetermined space between the upper side of the case 110 and the lower side of the case 110, for example, As shown in FIG. Specifically, the gas supply unit 120 may include the first to third gas diffusion regions 10, 20 and 30.

The first gas diffusion region 10 may be a space formed on the upper portion of the gas supply unit 120 and the second gas diffusion region 20 may be formed inside the source gas supply unit 122 and the reaction gas supply unit 126 And the third gas diffusion region 30 may be a space connected to the first gas diffusion region 10 and the third gas diffusion region 30 is formed inside the source gas supply unit 122 and the reaction gas supply unit 126, And may be a space connected to the region 20. At this time, the deposition gas may be injected toward the deposition target substrate W through the first gas diffusion region 10, the second gas diffusion region 20, and the third gas diffusion region 30 in order.

The first to third gas diffusion regions 10, 20, and 30 may include barrier ribs provided between the respective regions. 6, a first partition 12 may be provided between the first gas diffusion region 10 and the second gas diffusion region 20, and a second gas diffusion region 20 The third gas diffusion region 30 may be provided with the second partition wall 22 and the third gas diffusion region 30 may be provided with the third partition wall 32. 6 is a view illustrating a process of spraying a deposition gas through a gas diffusion region of a gas supply unit 120 according to an embodiment of the present invention.

The first to third barrier ribs 12, 22 and 32 may have diffusion holes 12a, 22a and 32a, respectively, having predetermined sizes. In this embodiment, the deposition gas can be diffused from one side of the gas supply unit 120 through the diffusion holes 12a, 22a, and 32a from the upper side to the other side, for example, downward. Specifically, the deposition gas can be diffused from the first gas diffusion region 10 to the second gas diffusion region 20 through the diffusion hole 12a provided in the first partition 12, Can be diffused from the third gas diffusion region 30 to the third gas diffusion region 30 through the diffusion holes 22a provided in the second partition 22 from the first gas diffusion region 30 to the third gas diffusion region 30, And can be diffused toward the substrate W to be deposited through the diffusion holes 32a provided therein. Accordingly, the pressure of the deposition gas supplied to the gas supply unit 120 can be evenly distributed to the plurality of diffusion holes 12a, 22a, and 32a, thereby improving the deposition uniformity. In addition, since the deposition gas is evenly injected by the diffusion holes 12a, 22a, and 32a, the thickness of the substrate W to be vapor-deposited can be uniformly processed.

A plurality of diffusion holes 12a, 22a and 32a are provided on the upper and lower surfaces of the first to third barrier ribs 12, 22 and 32. The diffusion holes 12a, 22a and 32a are formed along the longitudinal direction of the first to third barrier ribs 12, And may be formed at regular intervals.

The diffusion holes 12a, 22a, and 32a may be formed to face each other at a corresponding position on one side surface and the other side surface of each partition wall. Specifically, the diffusion holes 12a formed on the other side of the first bank 12 may be formed in the same number as the diffusion holes 22a formed on the upper side of the second bank 22, The diffusion holes 22a formed on the lower side of the barrier ribs 22 may be formed in the same number as the diffusion holes 32a formed on the upper side of the third barrier ribs 32 to face each other.

The number of the diffusion holes 12a, 22a, 32a is different for each partition wall, and the following expression can be satisfied.

[Equation]

The number of diffusion holes 12a formed in the first bank 12 is equal to the number of diffusion holes 22a formed in the second bank 22.

More specifically, the number of the diffusion holes 22a formed on the lower side of the second partition 22 may be larger than the number of the diffusion holes 12a formed on the upper and lower sides of the first partition 12, The number of the diffusion holes 32a formed on the lower side of the barrier rib 32 may be larger than the number of the diffusion holes 22a formed on the upper and lower sides of the second barrier rib 22. [ For example, the number of the diffusion holes 12a formed on the upper and lower sides of the first bank 12 is 3 to 5, and the number of the diffusion holes 22a formed on the lower side of the second bank 22 is 8 to 12, and the number of the diffusion holes 32a formed on the lower surface of the third bank 32 may be 240 to 260. Preferably, the number of the diffusion holes 12a formed on the upper and lower surfaces of the first partition 12 is four, the number of the diffusion holes 22a formed on the lower surface of the second partition 22 is ten And the number of the diffusion holes 32a formed on the lower surface of the third bank 32 may be 250. Thus, in the present embodiment, the deposition gas can be uniformly injected toward the deposition target substrate W through the plurality of diffusion holes 12a, 22a, and 32a provided in the respective partition walls.

While the present invention has been described in connection with what is presently considered to be practical exemplary embodiments, it is to be understood that the invention is not limited to the disclosed embodiments. Therefore, the scope of the present invention should not be limited to the described embodiments, but should be determined by the scope of the appended claims and equivalents thereof.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is to be understood that the invention is not limited to the disclosed exemplary embodiments, but, on the contrary, Modification is possible. Accordingly, the spirit of the present invention should be understood only in accordance with the following claims, and all equivalents or equivalent variations thereof are included in the scope of the present invention.

10: first gas diffusion region
12: first partition
20: second gas diffusion region
22: second partition
30: first gas diffusion region
32: first partition
110: Case
120: gas supply unit
122: source gas supply unit
122a: a first source gas supply part
122b: the second source gas supply part
124: purge gas supply unit
124a: first purge gas supply part
124b: the second purge gas supply part
124c: third purge gas supply part
124d: fourth purge gas supply section
126: Reaction gas supply unit
126a: the first reaction gas supply part
126b: the second reaction gas supply part
126c: the third reaction gas supply part
122c, 126d:
128: outer purge gas supply part
12a, 22a, 32a: diffusion holes
130: stage

Claims (10)

case; And
And a gas supply unit provided in the case and injecting an atomic layer deposition gas containing a source gas, a purge gas, and a reactive gas into another region of the substrate to be vaporized at the same time,
The gas supply part
The atomic layer deposition gas is diffused from one side to the other side through diffusion holes provided for each stage,
The gas supply part
A purge gas supply unit for supplying the purge gas and a reaction gas supply unit for spraying the reaction gas,
Wherein the source gas supply unit, the purge gas supply unit, and the reaction gas supply unit are arranged side by side at regular intervals along the longitudinal direction of the case,
Further comprising an outer purge gas supply unit disposed at an outer periphery along the circumferential direction of the gas supply unit and communicating with each other for separating an inner space to which gas is supplied and an outer space to which no gas is supplied,
The gas supply part
A first gas diffusion region that is a space formed in an upper portion of the gas supply unit;
A second gas diffusion region formed in the source gas supply unit and the reaction gas supply unit, the second gas diffusion region being a space connected to the first gas diffusion region; And
And a third gas diffusion region formed in the source gas supply unit and the reaction gas supply unit, the third gas diffusion region being a space connected to the second gas diffusion region,
The first to third gas diffusion regions
A first gas barrier provided between the first gas diffusion region and the second gas diffusion region;
A second gas barrier provided between the second gas diffusion region and the third gas diffusion region; And
And a third partition disposed below the third gas diffusion region,
The diffusion holes are formed at a plurality of positions on the upper and lower surfaces of the first to third barrier ribs. The diffusion holes are formed at regular intervals along the longitudinal direction of the first to third barrier ribs, Lt; / RTI >
Characterized in that the number of diffusion holes satisfies the following equation.
[Equation]
The number of diffusion holes formed in the first bank, the number of diffusion holes formed in the second bank, and the number of diffusion holes formed in the third bank.
delete delete delete delete delete delete The method according to claim 1,
Wherein the number of diffusion holes formed in the first barrier rib is 3 to 5, the number of diffusion holes formed in the second barrier rib is 8 to 12, and the number of diffusion holes formed in the third barrier rib is 240 to 260. Gas supply module for deposition.
delete The method according to claim 1,
The substrate to be vapor-deposited is provided on the other side of the gas supply unit,
The separation distance between the purge gas supply unit and the deposition target substrate
Wherein the distance between the reaction gas supply unit and the deposition target substrate is smaller than the distance between the source gas supply unit and the deposition target substrate.
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