KR20090097401A - Apparatus and method for depositing thin film - Google Patents

Abstract

An apparatus and a method for depositing a thin film are provided to form an insulation film without pore or crack on a substrate with micro-pattern by repeating deposition process and thermal process or plasma process. A deposition apparatus comprises a chamber(100), a substrate support(200), a substrate processor(300), and a rotating shaft(400). The substrate support mounts one or more substrates inside the chamber. The board processor comprises one or more deposition parts(320) which are positioned in parallel on the top of the substrate support and provides reactive gas continuously to the substrate, and one or more after treatment parts for after treatment of a thin film formed on the substrate. The rotating shaft rotates one of the substrate support and the substrate processor. The substrate is repetitively exposed to the deposition part and the after treatment part by the rotation of the rotating shaft.

Description

Evaporation apparatus and deposition method using the same {APPARATUS AND METHOD FOR DEPOSITING THIN FILM}

The present invention is to deposit a film on a semiconductor substrate, and more particularly, to a deposition apparatus and a deposition method using the same for filling a thin film without gaps or cracks between the fine circuit line width of the substrate on which the fine circuit pattern is formed.

As circuit line widths of semiconductor devices become narrower, insulating film filling and planarization processes between line widths become increasingly difficult.

The following three methods are proposed as a method of filling an insulating film in a narrow circuit line width.

(1) High Density Plasma (HDP) A method of filling a thin film in a fine circuit line width while depositing a thin film by chemical vapor deposition (CVD) and performing side etching with in-situ is used. However, in the case of depositing and laterally etching a thin film using a high density plasma, as shown in FIG. 1, the number of times that the deposition and etching have to be repeated according to the degree of the fine pattern may increase infinitely, thus decreasing productivity. Can be a big problem.

(2) There is a method of filling a fine circuit line width by using a spin-on coating method using a gel type oxide organic chemical having flow characteristics. In this method, the excessive oxide organic compound is filled between the fine patterns, and the oxide organic compound contains a large amount of hydride group (OH) and organic substance (CHx), and the volume shrinkage during high temperature heat treatment causes voids and Cracks are generated, and the etching characteristics are very poor, which includes a problem that may adversely affect reliability and product characteristics in the semiconductor manufacturing process.

(3) As another method of filling an insulating film in a fine pattern, when a SiH ₄ reaction gas and a H ₂ O ₂ reaction gas are chemically reacted at a low temperature, a thin film having a fluid characteristic such as Si (OH) x can be deposited. Therefore, there is a method of flowing and filling the insulating film in a highly curved pattern by using surface energy caused by the fine pattern. However, in this method, even when only a very small amount is deposited in the fine pattern, the insulating film flows and fills as much as the fine pattern height, and when the heat treatment process is performed at a high temperature after thin film deposition, as shown in FIG. (1; Void) or crack (2; Crack) occurs, which causes serious problems in the semiconductor manufacturing process.

The present invention is to solve the problems of the prior art described as a background art, by repeatedly performing a deposition process and a post-treatment process for a plurality of substrates in the chamber to repeatedly form a thin film several times to obtain the characteristics of the desired film Its purpose is to provide a vapor deposition apparatus and a vapor deposition method.

The vapor deposition apparatus of the present invention as a means for solving the above problems, the chamber; A substrate support for mounting at least one substrate in the chamber; Located in parallel to the upper substrate support, and having at least one deposition unit for forming a thin film on the substrate by continuously supplying the reaction gas, and at least one post-treatment processing unit for the post-treatment process of the thin film formed on the substrate Substrate processor; A rotating shaft for rotationally driving any one of the substrate support and the substrate processor; Including, it characterized in that each substrate is repeatedly exposed to the deposition unit and the post-treatment process by the rotation by the rotation axis.

In addition, the deposition method of the present invention, a deposition method for depositing a film on a substrate mounted on a substrate support object in the chamber, comprising the steps of: mounting at least one substrate on the substrate support; Bringing the substrate processor including one or more deposition units and one or more after-treatment units into proximity with the substrate; Rotating one of the substrate support and the substrate processor; And a step of repeatedly performing a post-treatment process for the thin film in the post-treatment process unit by supplying a reaction gas from the deposition unit to form a thin film on the substrate. In this case, the post-treatment process includes at least one of a heat treatment process and a plasma treatment process.

By using the deposition apparatus of the present invention and the deposition method using the same, the insulating film is filled without generating voids or cracks in the substrate having the fine pattern by repeatedly performing the heat treatment step and / or plasma treatment step as the deposition step and the post-treatment step. can do. In addition, since the process can be performed on a plurality of substrates at the same time, the productivity is greatly improved.

Hereinafter, the present invention will be described in detail with reference to embodiments of the present invention.

Embodiments according to the present invention can be divided and described according to the post-treatment process of the deposition process, below 1) heat treatment process in-situ as a post-treatment process of the deposition process, 2) heat treatment process and plasma treatment Process, 3) will be described by dividing the embodiment to perform a plasma treatment process.

On the other hand, the deposition unit and the post-treatment process unit constituting the substrate processor does not affect other components while maintaining the function of each component, a blocking wall for maintaining a fine gap between the substrate is formed between each component is a gas, etc. Block the flow of The deposition unit and the post-treatment process unit may be installed in a module unit inside the substrate processor main body so as to be detachably installed.

Example 1 Deposition Apparatus and Deposition Method for Performing Deposition Process and In-situ Heat Treatment Process

3 is a schematic configuration diagram of a deposition apparatus performing a deposition process and an in-situ heat treatment process, FIG. 4A is a bottom view of a chamber top plate, and FIG. 4B is a plan view of a chamber bottom plate.

Deposition apparatus according to the first embodiment of the present invention, as shown is to take a way to rotate the substrate support 200 inside the chamber 100 by using a rotating shaft 400 installed on the lower, it is not shown A rotating shaft (not shown) may be installed on the substrate processor 300 to rotate the substrate processor 300 instead of the substrate support 200.

The chamber 100 includes a gas inlet 110 for supplying an atmosphere gas, and installs a gas pumping port 130 for discharging the atmosphere gas to both sides of the substrate processor 300 in an annular shape and pumps the gas. A gas outlet 120 for discharging to the outside of the chamber 100 is provided.

The substrate processor 300 includes a deposition unit 320 formed in a disk-shaped main body 310 disposed in parallel with the substrate on the substrate support 200 to a length greater than or equal to a substrate diameter around the center of the main body 310; It consists of a heat treatment unit 330 installed spaced apart from this by a certain angle. At this time, the deposition unit 320 and the heat treatment unit 330 may be disposed inside a predetermined arc-shaped area around the center of the main body 310, and each of the circumference is provided with a heat insulating material (326, 333) The influence of heat transfer in the region can be minimized.

Meanwhile, a barrier wall (not shown) having a predetermined height may be installed along the outer portion of the lower portion of the main body 310 to maintain a fine gap therebetween, or the deposition unit 320 and the heat treatment unit 330 may be provided. A barrier wall (not shown) is provided only around the periphery of the region that maintains the one-way gas flow to the gas pumping hole 324, and physically restricts gas mixing with the other region by maintaining a minute gap between the rotating substrate. can do.

The shape of the main body 310, as shown in Figure 3, instead of forming a disk shape having a predetermined volume, it is not shown in the drawing, but the deposition unit 320 and the heat treatment unit 330 to both sides around the center It may be designed to have an arc shape, and the barrier wall may be provided around each area if necessary.

As illustrated in FIG. 4A, the deposition unit 320 constituting the deposition apparatus of the present invention deposits a film on a substrate by two kinds of inter-gas reactions. The deposition unit 320 uses a separate gas injection port to suppress the reaction by mixing in the pre-injection step of each gas, in which the injection direction of the gas, the difference between the gas injection portion and the substrate, Depending on the location of the pump to discharge the gas to the outside of the chamber 100, the presence or absence of inert gas to suppress the mixing between the injected gas may have a variety of structures, such as the following nine embodiments.

(1) FIG. 5 is a cross-sectional view showing the first embodiment of the vapor deposition unit 320, and taken along the line A-A 'in FIG. As shown, the first and second gas inlets 321a and 321b into which two kinds of gases are introduced from the outside of the chamber 100, and the first and second gas injection holes for injecting the respective gases into the substrate ( Extra gas which is not higher than the gas injection holes 322a and 322b between the 322a and 322b and the respective gas injection ports 322a and 322b from the substrate and does not contribute to the film formation among the injected gases is moved out of the chamber 100. It is made of a gas pumping port 324 to discharge by pumping.

At this time, the gas injection ports (322a, 322b) are installed in the radial direction so that the substrate passes through the lower portion. According to FIG. 5, the two gas injection ports 322a and 322b are installed in the radial direction, that is, to have a length equal to or greater than the diameter of the substrate while maintaining a constant angle. Although not shown in the drawings, the gas injection holes 322a and 322b may be arranged in parallel with each other to maintain a predetermined interval.

Therefore, the gas injected from the gas injection holes 322a and 322b at both sides of the gas pumping hole 324 is mixed on the rotating substrate under the gas pumping hole 324 as shown by the arrow of FIG. 5 to form a thin film on the substrate. In this case, the gas pumping hole 324 not only prevents the injected gas from leaking to the adjacent substrate, but also serves to induce the flow of the injected gas.

On the other hand, the gas injection port (322a, 322b) is formed inclined inward to each other so that each injected gas collides on the surface of the substrate, reducing the substrate residence time of the gas and at the same time increase the pressure at the time of confluence of the injected gas reactivity Can improve.

Other embodiments of the deposition unit will be described below based on differences from the first embodiment.

(2) FIG. 6 shows a second embodiment of the deposition unit, and unlike the first embodiment, gas is mixed in a narrower area on the substrate by inducing a flow of gas injected under the gas pumping hole 324. It is further provided with a pumping guide plate 325 inside the lower end thereof.

(3) FIG. 7 shows a third embodiment of the vapor deposition unit. Unlike the first embodiment, the gas injection holes 322a and 322b are further separated from the substrate, and the gas pumping holes 324 are provided closer to the substrate. . Therefore, gas-to-gas mixing is performed in a narrower area on the substrate as compared with the first embodiment, while pumping of excess gas is made closer to the substrate, whereby a thinner film can be formed on the substrate.

(4) FIG. 8 shows a fourth embodiment of the vapor deposition unit. Unlike the first embodiment, the first and second gas injection holes 322a and 322b are disposed adjacent to each other, and the gas pumping holes 324 are each gas. The nozzles 322a and 322b are spaced apart from the substrate. Therefore, compared with the first embodiment, the amount of deposition can be increased by lengthening the time that the gases are mixed and stay on the substrate.

(5) FIG. 9 shows the fifth embodiment of the vapor deposition unit. Unlike the fourth embodiment, the gas injection holes 322a and 322b have different spacings between the lower ends of the gas injection holes 322a and 322b and are installed farther from the substrate. The substrate residence time of the gas injected from 322a can be increased.

(6) FIG. 10 shows a sixth embodiment of the vapor deposition unit, and unlike the first embodiment, the first and second gas pumping holes 324a and 324b are located on the sides of the first and second gas injection holes 322a and 322b, respectively. In addition, as the gas injected from each gas injection port (322a, 322b) is first discharged through each adjacent gas pumping port (324a, 324b), atomic layer thin film deposition in addition to chemical vapor deposition on the substrate surface By inducing this to occur, thin film deposition takes place in the form of an intermediate step between chemical vapor deposition and atomic layer thin film deposition.

(7) FIG. 11 shows a seventh embodiment of the deposition unit, and is connected with the purge gas injection hole 327 of the inert gas between the first gas pumping port 324a and the second gas injection port 322b of the sixth embodiment. And a purge gas injection port 328 for injecting the purge gas, and the inert gas to be injected performs the purge function (in the drawing, the purge gas is indicated by dotted arrows), so that the first gas and the second gas are discharged. It inhibits direct mixing of the gases and induces atomic layer deposition of the first and second gases on the substrate. Therefore, a thinner atomic layer thin film can be formed than the thin film by intergas mixing.

(8) FIG. 12 shows an eighth embodiment of the vapor deposition unit, in which gas injection holes 322a and 322b are provided in the center adjacent to each other, and gas pumping holes 324a and 324b are provided on both sides thereof. The gas injected at 322b may be prevented from being injected into the heat treatment unit 330 which is an adjacent post-processing unit.

(9) FIG. 13 shows a ninth embodiment of the vapor deposition unit, where the first and second shower heads 329a and 329b are respectively sprayed before the respective gases supplied to the first and second gas inlets 321a and 321b are injected. It is installed to be injected through a plurality of first, second gas injection ports (322a, 322b) through. At this time, each of the gas injection ports (322a, 322b) are arranged so that different gases intersect, and the gas pumping ports (324a, 324b) are provided on both sides. In the drawing, three first gas injection holes 322a and four second gas injection holes 322b are shown on both sides thereof, but the number may be added or decreased according to the purpose of the process. As such, when the first and second shower heads 329a and 329b are used, the reaction by mixing the reaction gases on the substrate can be further promoted.

Next, the heat treatment unit 330 constituting the deposition apparatus of the present invention, as shown in Figure 4a, is installed at a predetermined angle spaced apart from the deposition unit 320 installed inside the main body 300. At this time, when the rotational speed of the substrate support 200 is determined, the time between the deposition process and the heat treatment process is determined according to the separation angle of the deposition unit 320 and the heat treatment unit 330, so that the separation angle may be adjusted in consideration of process characteristics. have.

Specifically, the heat treatment unit 330 is formed on the lower surface of the main body 310 facing the substrate is formed of a plate-shaped transmission window 332 made of quartz so that the radiant heat of the heating source 331 is transmitted, the heat generation therein A heating source 331 such as a lamp is installed, and a heat insulator 333 is installed around the heating source so that the heat of the heat treatment unit 330 does not affect other regions of the substrate processor 300. In this case, the heating source 331 may be arranged at least two heating lamps in the radial direction.

The heat treatment unit 330 configured as described above may delay the operation time in consideration of the point in time at which the substrate having completed the first deposition through the evaporation unit 320 is reached.

Embodiments according to the deposition method of the present invention using the deposition apparatus described above are as follows.

Referring to Figure 3, the deposition method according to the present invention comprises the following steps.

First, a plurality of substrates are sequentially loaded on the substrate support 200 inside the chamber 100.

Next, the distance between the substrate support 200 and the substrate processor 300 is approached. This is accomplished by elevating the substrate support 200, which has been lowered for mounting the substrate, to approach the substrate processor 300.

Next, the substrate support 200 is rotated by rotating the rotation shaft 400. Although not shown in the drawing, it is a matter of course that the rotating shaft installed on the substrate processor 300 can be rotated.

Next, two kinds of gases are injected from the two gas injection holes 322a and 322b constituting the deposition unit 320 to form a thin film on the rotating substrate, and the substrate on which the thin film is formed is heat treated in the heat treatment unit 330. The process is repeated. In this case, the thin film may be oxidized by supplying a gas such as O ₃ , O ₂ .. during the heat treatment process.

On the other hand, after the deposition process for the substrate and before the heat treatment step may be further subjected to a softening step of stabilizing the fluid film by exposing the substrate on which the fluid film is formed to the atmosphere gas for a predetermined time. In addition, by cooling the substrate after the heat treatment may be further subjected to a cooling process for preparing the next deposition process. This cooling process is performed by the cooling line 210 installed inside the substrate support 200 to circulate the cooling water.

The deposition process and the heat treatment process are repeatedly performed until a film having a desired thickness is formed on the substrate. As the thickness of the thin film deposited by each deposition process becomes thicker, the gap between the pores or cracks during heat treatment is increased. Since the thickness of the thin film is adjusted to 10 nm or less, the rotational speed of the rotating shaft 400 and the gas injection amount are adjusted.

Finally, when a film having a desired thickness is formed on the substrate, the process ends by unloading the substrate from the substrate support 200 inside the chamber 100 in sequence. At this time, the thickness of the desired film is approximately determined by {(thickness of the thin film deposited in the deposition portion)-(thickness of the thin film contracted in the heat treatment portion)} X (rotation speed).

By using the above-described deposition method, various kinds of films can be formed, and in particular, a good insulating film can be formed on a substrate on which a pattern having a very small circuit line width is formed.

Specifically, SiO ₂ having a dielectric constant of 3.6 on the substrate on which the fine pattern is formed In order to form an insulating film, SiH ₄ (or SiH ₂ Cl ₂ , SiCl _{4 )} and H ₂ O ₂ were supplied as reaction gases to form a fluid film on the substrate, and then a hydride group (OH) _X was formed through a heat treatment process. It is possible to increase the density of the thin film by removing it, and by repeating the deposition process and the heat treatment process, it is possible to obtain a high quality insulating film without generating voids or cracks in the insulating film. At this time, the deposition process requires cooling the substrate before the deposition process due to the flow characteristics of the film, it is preferable to maintain the approximately -10 to 20 ℃ by circulating the cooling water in the cooling line 210 inside the substrate support 200.

In this case, instead of using the H ₂ O ₂ as a reaction gas, O ₃ and H ₂ O may be simultaneously supplied to form a Si (OH) _X thin film.

On the other hand, in addition to the method of forming the insulating film containing silicon as described above, TEOS, which is an organic silicon reaction raw material, may be used as the reaction gas to form an insulating film having a low dielectric constant containing carbon (C).

In addition to the above description, the present invention can of course form thin films of various compositions by varying the type of reaction gas.

Example 2 Deposition apparatus and deposition method for performing deposition process, in-situ heat treatment process and in-situ plasma treatment process

As shown in FIG. 14, the deposition apparatus according to the second exemplary embodiment of the present invention, unlike the first exemplary embodiment, further includes a plasma processing unit 340 in addition to the heat treatment unit 330 as a post-treatment process unit, with respect to a rotating substrate. The deposition process, heat treatment process and plasma treatment process are repeatedly performed.

Since the deposition process in the deposition unit 320 and the heat treatment process in the heat treatment unit 330 are the same as those of the first embodiment, the description of overlapping portions will be omitted.

The plasma treatment process may use plasma gases of N, F, C, and O components, which will be described below.

(1) Improvement of etching characteristics by [N] component plasma treatment on SiO ₂ thin film

After deposition of SiO ₂ insulating film, the deposited thin film is flowed by the flow characteristics, and after removing the hydride group by heat treatment, and plasma treatment using N ₂ , NH ₃ gas to improve the etching characteristics of the thin film, a SiON thin film can be formed. Can be.

(2) Lowering the dielectric constant by plasma treatment of the [F] component on a SiO ₂ thin film

After deposition of the SiO ₂ insulating film, the deposited thin film is flowed by the flow characteristics, and after removing the hydride group by heat treatment, plasma treatment using a gas such as F ₂ or NF ₃ to reduce the dielectric constant of the thin film forms a SiOF thin film. Can be.

(3) When dielectric constant is lowered by plasma treatment of component [C] on SiO ₂ thin film

After deposition of the SiO ₂ insulating film, the deposited thin film is flowed by the flow characteristics, and after removing the hydride group by heat treatment, to inject the gas vaporized organic solvent in order to lower the dielectric properties of the thin film to form a SiOC thin film.

(4) [O] component plasma treatment on SiO ₂ thin film if the thin film to obtain a stable SiO ₂

After deposition of SiO ₂ insulating film, the deposited thin film is flowed by the flow characteristics, and after removing the hydride group by heat treatment, in order to improve the thin film density characteristics and composition ratio, it is stable SiO ₂ by injecting plasma with O ₂ or N ₂ O gas. A thin film can be formed.

Example 3 Deposition Apparatus and Deposition Method for Performing Deposition Process and In-situ Plasma Treatment Process

As shown in FIG. 15, the deposition apparatus according to Embodiment 3 of the present invention, unlike Embodiment 1, includes only the plasma processing unit 340 as a post-processing unit, and repeatedly deposits the plasma and the plasma processing process on the rotating substrate. To do it.

Since the deposition process in the deposition unit 320 is the same as the description of the first embodiment, a description of overlapping portions will be omitted below.

In the plasma processing step of the plasma processing unit 340, the thin film deposited by the deposition unit 320 forms an inflexible surface between the bends between the fine patterns according to the surface energy relaxation law. Plasma treatment using gas. Through such a plasma treatment, the surface temperature due to ion bombardment on the surface of the insulating film is increased, and thus the density of the thin film can be improved by easily removing the hydride group (OH). In particular, by increasing the density of the surface of the thin film, the deposition unit 320 may further facilitate the deposition of the thin film during the second deposition process after the first deposition process on the substrate.

The embodiments described above are only examples for describing the present invention, and thus the scope of the present invention should not be limited, and a change in some configurations within the technical scope of the present invention is within the scope of the present invention. It should be interpreted to be included.

The present invention can be usefully used in the deposition equipment industry for semiconductor manufacturing.

1 is a graph showing a filling method according to the line width using a high density plasma chemical vapor deposition method.

Figure 2 is a photograph showing the voids and cracks generated when the heat treatment after filling the flowable membrane.

3 is a schematic configuration diagram showing a vapor deposition apparatus of the present invention.

Figures 4a, 4b is a bottom view of the chamber top plate according to the first embodiment of the present invention and a plan view of the chamber bottom plate.

5 to 13 are cross-sectional views showing various embodiments of the deposition unit of the present invention.

14 is a bottom view of the chamber top plate according to the second embodiment of the present invention.

15 is a bottom view of the chamber top plate according to the third embodiment of the present invention.

<Description of Symbols for Main Parts of Drawings>

100: chamber 110: gas inlet

120: gas outlet 130: gas pumping port

200: substrate support 210: cooling line

300: substrate processor 310: main body

320: deposition unit 321a, 321b: first, second gas inlet

322a, 322b: first and second gas injection holes 323: gas discharge port

323a, 32b: first and second gas outlet 324: gas pumping port

324a, 324b: first and second gas pumping port 325: pumping guide plate

326: insulation 327: purge gas inlet

328: purge gas injection port 329a, 329b: first and second shower head

330: heat treatment unit 331: heating source

332: transmission window 333: heat insulating material

340: plasma processing unit 400: rotation axis

Claims (26)

chamber; A substrate support for mounting at least one substrate in the chamber; Located in parallel to the upper substrate support, and having at least one deposition unit for forming a thin film on the substrate by continuously supplying the reaction gas, and at least one post-treatment processing unit for the post-treatment process of the thin film formed on the substrate Substrate processor; A rotating shaft for rotationally driving any one of the substrate support and the substrate processor; Including, And each substrate is repeatedly exposed to the deposition unit and the post-treatment process unit by rotation by the rotation axis. The method according to claim 1, The substrate processor is installed in the lower part of the chamber top plate And the rotating shaft is installed under the substrate support. The method according to claim 1, The substrate processor is installed at a lower portion of the chamber upper plate, The rotating shaft is installed on the substrate processor, characterized in that installed on the top. The method according to claim 1, The substrate processor, And a deposition unit and a post-processing unit spaced apart from each other by a predetermined angle in the center of the body. The method according to claim 4, The deposition unit and the post-processing unit is a deposition apparatus, characterized in that detachably installed in the body. The method according to claim 1, The deposition unit, At least one gas injection port for injecting at least one reaction gas introduced from the outside of the chamber onto a substrate; And At least one gas pumping port for pumping the injected gas and discharging it to the outside of the chamber; Deposition apparatus characterized in that it comprises a. The method according to claim 6, The gas injection port is composed of two or more, each having a length of at least the substrate diameter, the deposition apparatus characterized in that arranged to maintain a predetermined angle in the radial direction or parallel to each other to maintain a predetermined interval in the radial direction . The method according to claim 7, Adjacent gas injection ports for injecting different gases of the gas injection port, And injecting each gas to be inclined inward to impinge on the surface of the substrate. The method according to claim 7, At least one of the gas injection port and the gas pumping port is characterized in that the interval between the substrate and the different. The method according to claim 7, And a purge gas injection hole for injecting an inert gas between adjacent gas injection holes for injecting different gases among the gas injection holes. The method according to claim 6, The gas pumping port, It is installed between the gas injection port or on the side of the gas injection port, the vapor deposition apparatus, characterized in that for pumping the injected gas up. The method according to claim 11, The gas pumping port provided between the gas injection port, the vapor deposition apparatus, characterized in that to install a pumping guide plate parallel to the substrate, respectively in the lower end. The method according to claim 7, Further comprising two or more independent shower heads are supplied with different types of gas from the outside of the chamber, A plurality of gas injection ports are installed in the lower portion of each shower head, and the gas injection holes for injecting different gases are arranged to cross each other. The method according to claim 1, The post-processing step, And at least one of a heat treatment unit for heat-treating the film deposited on the substrate, and a plasma processing unit for applying plasma to the deposited film. The method according to claim 14, The heat treatment unit, A heating source installed inside the substrate processor; A transmission window for irradiating the substrate with light emitted from the heating source; And Deposition apparatus comprising a heat insulator to prevent the heat of the heating source is transferred to the substrate processor. The method according to claim 15, And a reflective layer is formed on a surface of the substrate support to which the light radiated from the heating source is irradiated. A deposition method for depositing a film on a substrate mounted on a substrate support object in a chamber, Mounting at least one substrate on the substrate support; Bringing the substrate processor including one or more deposition units and one or more after-treatment units into proximity with the substrate; Rotating one of the substrate support and the substrate processor; Performing a deposition process of forming a thin film on a substrate by supplying a reaction gas from the deposition unit, and repeatedly performing a post-treatment process on the thin film in the post-processing unit. Deposition method comprising a. The method according to claim 17, The post-treatment step, the deposition method comprising at least one of a heat treatment step and a plasma treatment step. The method according to claim 17, The deposition process is characterized in that to form an insulating thin film on a substrate by supplying any one of SiH ₄ , SiH ₂ Cl ₂ , SiCl ₄ as a reaction gas and H ₂ O ₂ . The method according to claim 17, The deposition step is a deposition method characterized in that to form an insulating thin film by supplying any one of SiH ₄ , SiH ₂ Cl ₂ , SiCl ₄ as a reaction gas and O ₃ and H ₂ O. The method according to claim 17, The deposition process is characterized in that the insulating film is formed on the substrate by supplying TEOS as the reaction gas. The method according to claim 17, The deposition process is characterized in that for controlling the rotational speed of the rotary shaft and the supply amount of the reaction gas so that the thickness of the thin film deposited on the substrate is less than 10nm. The method according to claim 18, The post-treatment step, the deposition method characterized in that the heat treatment while supplying a gas containing at least one of O ₃ , O ₂ . The method according to claim 18, After the deposition process, the deposition method characterized in that it further passes through a softening process to stabilize the thin film before the heat treatment process. The method according to claim 18, And a cooling step of cooling the substrate before the subsequent deposition step after the heat treatment step. The method according to claim 18, The plasma treatment step, A vapor deposition method comprising supplying a plasma gas containing at least one of N, F and C. O components.

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