KR101006177B1 - Atomic layer deposition apparatus - Google Patents

Abstract

Disclosed is an atomic layer deposition apparatus that increases the residence time of a source gas to improve deposition efficiency. The atomic layer deposition apparatus includes: a process chamber, a susceptor provided in the process chamber and seated and rotating on a plurality of substrates; a showerhead provided on the susceptor to inject a deposition gas for depositing a thin film on the plurality of substrates; It is provided on the outer periphery of the susceptor and the shower head comprises a gas holding unit for increasing the time that the injected deposition gas stays on the substrate surface. Herein, the gas holding part may include a first holding part protruding from the surface of one of the susceptor and the shower head and the other one surface so as to increase the residence time of the deposition gas by disturbing the flow of the deposition gas. And a second holding part recessed at a position corresponding to the holding part. Therefore, the gas holding part is suppressed from being exhausted from the exhaust baffle to increase the residence time on the surface of the substrate, so that the deposition efficiency is improved and the quality of the thin film is improved.

Atomic Layer Deposition Equipment, ALD, Shower Head, Exhaust

Description

Atomic Layer Deposition Apparatus {ATOMIC LAYER DEPOSITION APPARATUS}

The present invention relates to an atomic layer deposition apparatus, and more particularly, to provide an atomic layer deposition apparatus capable of improving the deposition efficiency by increasing the residence time of the source gas.

In general, in order to deposit a thin film having a predetermined thickness on a substrate such as a semiconductor wafer or glass, physical vapor deposition (PVD) using physical collision such as sputtering and chemical vapor deposition using chemical reaction thin film manufacturing method using (chemical vapor deposition, CVD) or the like is used.

The chemical vapor deposition method may include atmospheric pressure chemical vapor deposition (APCVD), low pressure chemical vapor deposition (LPCVD), plasma organic chemical vapor deposition (plasma enhanced CVD, PECVD), and the like. Plasma organic chemical vapor deposition has been widely used due to the advantages of being able to deposit and fast forming thin films.

However, as the design rule of the semiconductor device is drastically fined, a thin film of a fine pattern is required, and the step height of the region where the thin film is formed is also very large. As a result, the use of an atomic layer deposition (ALD) method capable of forming a very fine pattern of atomic layer thickness very uniformly and having excellent step coverage is increasing.

The atomic layer deposition method (ALD) is similar to the conventional chemical vapor deposition method in that it uses chemical reactions between gas molecules. However, conventional chemical vapor deposition (CVD) methods inject a plurality of gas molecules into the process chamber at the same time to deposit reaction products generated above the substrate onto the substrate, whereas atomic layer deposition processes a single gaseous material. It is different in that it injects into the chamber and then purges it so that only the physically adsorbed gas remains on top of the heated substrate, and then another gaseous material is deposited to deposit chemical reaction products that occur only on the upper surface of the substrate. .

The thin film implemented through such an atomic layer deposition method has a very good step coverage characteristics and has the advantage that it is possible to implement a pure thin film with a low impurity content, which is widely attracting attention.

However, when a showerhead or susceptor rotates at high speed by using a conventional atomic layer deposition apparatus and sprays different types of source gases and the substrate sequentially passes through the source gases to form a thin film, the substrate rotates at high speed. Since the contact time between the substrate and the source gas is short, there is a problem that the chemical reaction of the source gas does not occur sufficiently on the surface of the substrate. As a result, the deposition efficiency and the quality of the deposited thin film are deteriorated and the deposition time is increased.

The present invention is to solve the above-mentioned conventional problems, to increase the time the source gas stays in the process chamber to increase the contact time between the source gas and the substrate to provide an atomic layer deposition apparatus for improving the deposition efficiency will be.

According to embodiments of the present invention for achieving the above object of the present invention, the atomic layer deposition apparatus for improving the deposition efficiency by increasing the residence time of the source gas is provided in the process chamber, the process chamber is a plurality of substrates A susceptor that is seated and rotates, a showerhead disposed above the susceptor to inject a deposition gas for depositing thin films on the plurality of substrates, and a deposition gas that is provided at an outer periphery of the susceptor and the showerhead It comprises a gas holding unit for increasing the time to stay on the surface of the substrate. Herein, the gas holding part may include a first holding part protruding from the surface of one of the susceptor and the shower head and the other one surface so as to increase the residence time of the deposition gas by disturbing the flow of the deposition gas. And a second holding part recessed at a position corresponding to the holding part.

In an embodiment, the first holding part has a ring shape protruding a predetermined height along an outer circumference of one of the susceptor and the shower head. Alternatively, the first holding part has a ring shape divided into a plurality of parts to discharge the exhaust gas.

In an embodiment, the first holding part is lower than the surface on which the second holding part is formed, or has a height accommodated in the second holding part.

In an embodiment, the shower head includes a plurality of source regions for injecting source gas and a plurality of purge regions for injecting purge gas, and the first holding part increases the residence time of the source gas, but the purge gas is smooth. It is formed in the source region so that it can be discharged. Here, a part of the first holding part is formed, but the second holding part has a circular shape along the circumference of the susceptor to allow the susceptor to rotate.

On the other hand, according to another embodiment of the present invention for achieving the above object of the present invention, the atomic layer deposition apparatus is provided in the process chamber, the process chamber, the susceptor to be seated and rotated, the susceptor A shower head which is provided at an upper portion and injects a deposition gas for depositing thin films on the plurality of substrates and protrudes from an outer periphery of one of the susceptor and the shower head so that the injected deposition gas stays on the substrate surface It includes a gas holding unit for increasing the time.

In an embodiment, the gas holding portion has a height lower than a gap between the susceptor and the showerhead.

In an embodiment, the shower head is formed with a plurality of source regions for injecting the source gas and a plurality of purge regions for injecting the purge gas, the gas holding unit increases the residence time of the source gas, but the purge gas is smoothly discharged It is formed in the source region so that it can be.

On the other hand, according to another embodiment of the present invention for achieving the above object of the present invention, the atomic layer deposition apparatus is provided along the wall of the process chamber, the process chamber a plurality of exhaust gas in the process chamber An exhaust baffle having an exhaust hole formed therein, a susceptor provided in the process chamber and seated and rotating on a plurality of substrates, a showerhead provided on the susceptor, and spraying deposition gas for depositing a thin film on the plurality of substrates; And a gas holding part provided in the exhaust baffle to delay the injected deposition gas from being discharged into the exhaust baffle.

In an exemplary embodiment, the gas retaining portion may protrude to a certain height from the exhaust baffle surface and may be formed at a position adjacent to the susceptor.

In an embodiment, the gas holding portion has a ring shape corresponding to the outer periphery of the susceptor. In addition, the gas holding part has a ring shape divided into a plurality so that the exhaust gas flows into the exhaust hole.

In an exemplary embodiment, the shower head may include a plurality of source regions for injecting source gas and a plurality of purge regions for injecting purge gas, and the gas holding portion may increase the residence time of the source gas while the gas holding portion increases purge gas. Is formed at a position corresponding to the source region so as to be discharged smoothly.

According to the present invention, first, by forming a protrusion and a concave portion along the outer periphery of the showerhead and the susceptor to prevent the injection of the injected source gas into the exhaust baffle to increase the residence time of the source gas, the deposition efficiency and the thin film Improve quality.

In addition, the gas holding unit may be implemented as a relatively simple structure without changing the structures of the showerhead and the susceptor.

Second, by forming a protrusion only in the region in which the source gas is injected in the shower head, the residence time of the source gas can be effectively increased.

Third, by forming a pair of protrusions and the concave portions for accommodating the protrusions, the residence time of the source gas is increased, and the susceptor or the shower head can be rotated.

Fourth, a protrusion may be formed to prevent the flow of the source gas at a position facing the susceptor in the exhaust baffle. That is, by changing only the structure of the exhaust baffle without changing the structure of the susceptor and the shower head, the gas holding part can be realized, and the gas holding part does not affect the rotation of the susceptor and the shower head.

Although the preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings, the present invention is not limited or restricted by the embodiments.

Hereinafter, an atomic layer deposition apparatus according to a first embodiment of the present invention will be described in detail with reference to FIGS. 1 to 3.

1 is a cross-sectional view of an atomic layer deposition apparatus according to a first embodiment of the present invention, FIG. 2 shows a showerhead in the atomic layer deposition apparatus of FIG. 1, and FIG. 3 shows a susceptor.

Referring to FIG. 1, the atomic layer deposition apparatus 100 includes a process chamber 110, a susceptor 120, a showerhead 130, and a gas holding unit 210.

The process chamber 110 accommodates the substrate W to provide a space in which the deposition process is performed.

Here, the substrate W may be a silicon wafer. However, the present invention is not limited thereto, and the substrate W may be a transparent substrate including glass used for a flat panel display device such as a liquid crystal display (LCD) and a plasma display panel (PDP). In addition, the substrate W is not limited in shape and size by drawing, and may have substantially various shapes and sizes, such as circular and rectangular plates.

An exhaust baffle 111 and a chamber exhaust 150 are provided to exhaust the exhaust gas in the process chamber 110 along the wall in the process chamber 110.

The exhaust baffle 111 is provided between the process chamber 110 and the susceptor 120 to suck the exhaust gas on the susceptor 120 and discharge the exhaust gas to the outside of the process chamber 110. For example, the exhaust baffle 111 has a plurality of chamber exhaust holes 152 formed on the same surface as the surface of the susceptor 120 so as to smoothly discharge the exhaust gas.

The chamber exhaust part 150 includes an exhaust pump 155 connected to the chamber exhaust hole 152 to form a suction force.

The susceptor 120 is provided in the process chamber 110 and supports the plurality of substrates (W). Here, the susceptor 120 is a semi-batch type having excellent throughput, and a plurality of substrates W are arranged to support one surface on the same plane and are disposed on the surface of the susceptor 120. Radially along the circumferential direction.

The susceptor 120 rotates so that the substrate W revolves about the center point of the susceptor 120, and a rotation shaft 125 for rotating the susceptor 120 below the susceptor 120. ) Is provided.

The shower head 130 is provided above the process chamber 110 to provide deposition gas to the surface of the substrate W supported by the susceptor 120.

The deposition gas includes a source gas containing a material constituting a thin film to be formed on the surface of the substrate (W) and a purge gas for purging the source gas. In addition, according to the present embodiment, two different kinds of gases that react with each other to form a thin film material are used, and as the purge gas, the source gases and the thin film formed on the substrate W and the substrate W are used. A stable gas is used that does not react chemically with.

The shower head 130 is provided with a plurality of injection holes 132 for injecting the deposition gas into which the deposition gas is injected, and a plurality of injection holes for injecting the same deposition gas in a region corresponding to the substrate W ( 132 A plurality of injection zone 131 is formed of a group. For example, as illustrated in FIG. 2, the injection region 131 is sprayed with a first source region 311, a second source region 312, and a purge gas in which two kinds of different source gases are respectively injected. And a plurality of purge regions 313 and 314, and the purge regions 313 and 314 are disposed between the first and second source regions 311 and 312, respectively.

Here, the size, number and arrangement of the injection holes 132 are not limited by the drawings, and may be disposed in substantially various forms so that the deposition gas may be uniformly sprayed onto the substrate (W). In addition, the injection hole 132 may have a circular hole or a slit shape.

The shower head 130 is provided with an exhaust line 140 for discharging the exhaust gas including the unreacted deposition gas and the residual deposition gas in the process chamber 110 through the shower head 130. For example, the exhaust line 140 is formed by arranging a plurality of exhaust holes 142 in two 'V' shapes so as to partition the injection area 131, and the two exhaust lines 140. The 'V' type vertices facing each other are provided at the center of the shower head 130.

In the present exemplary embodiment, the exhaust line 140 has a 'V' shape, but the shapes of the exhaust line 140 and the injection region 131 are not limited to the drawings. In addition, an embodiment in which the exhaust gas is discharged through the side or the bottom of the process chamber 110 is not provided with the exhaust line 140 in the shower head 130.

The gas holding unit 210 is provided in the susceptor 120 and the shower head 130 to delay the deposition gas injected from the shower head 130 to be discharged to the exhaust baffle 111. It serves to increase the residence time on the surface of the substrate (W).

Hereinafter, the gas holding unit 210 according to the first embodiment of the present invention will be described in detail with reference to FIGS. 2 and 3.

2 and 3, the gas holding unit 210 is recessed a predetermined depth from the surface of the first holding part 211 and the shower head 130 protruding from the surface of the susceptor 120 and the first holding part 211. And a second holding part 212 in which the holding part 211 is accommodated.

The first holding part 211 protrudes a predetermined height from the surface of the susceptor 120 to become an obstacle for delaying the flow of the deposition gas into the exhaust baffle 111. That is, the first holding part 211 protrudes a predetermined height from the surface of the susceptor 120 to effectively prevent the deposition gas injected to the substrate W from flowing into the exhaust baffle 111. It is formed in a ring shape along the outer periphery of the susceptor 120.

Since the susceptor 120 rotates at a predetermined speed, the first holding part 211 or the susceptor 120 may be damaged. In order to prevent such a risk, the shower head 130 is provided with a second holding part 212 corresponding to the first holding part 211 and accommodating the first holding part 211.

In the present embodiment, the first holding part 211 is not inserted into the second holding part 212. As shown in FIG. 1, the first holding part 211 protrudes to a position adjacent to the surface of the susceptor 120. Accordingly, the first holding part 211 serves as a sidewall of the space between the susceptor 120 and the shower head 130, thereby separating the space between the susceptor 120 and the shower head 130. As a result, the deposition gas injected from the shower head 130 may effectively increase the residence time on the surface of the substrate (W). As the contact time between the deposition gas and the substrate W increases, the deposition efficiency is improved and the quality of the deposited thin film is improved.

Here, unlike the first embodiment described above, the first holding part 211 may be coupled to be partially inserted into the second holding part 212. In this case, the first holding part 211 and the second holding part 212 may be coupled to each other to more effectively isolate the space inside the susceptor 120 and the shower head 130. However, when the first holding part 211 is inserted into the second holding part 212, the second holding part 212 may allow the first holding part 211 to rotate the susceptor 120. It forms more relaxed space than) and is formed continuously.

On the other hand, since the exhaust gas is to be discharged even in the space inside the gas holding portion 210, the gas holding portion 210 is formed to allow the exhaust gas to flow out to the exhaust baffle (111).

For example, a portion of the first holding part 211 is opened to a predetermined width to form a plurality of first exhaust grooves 213 that communicate the inside and the outside of the first holding part 211. That is, the first holding part 211 has a ring shape divided at regular intervals. In addition, a part of the second holding part 212 is embedded in the second holding part 212 at the same position as that of the first exhaust groove 213 so that the second exhaust groove has the same surface as the surface of the shower head 130. 214 is formed.

Since the first and second exhaust grooves 213 and 214 do not obstruct the flow of the deposition gas and the exhaust gas, the exhaust gas is smoothly discharged through the first and second exhaust grooves 213 and 214, so that the exhaust efficiency is improved. To prevent degradation.

In addition, since the first holding part 211 is not inserted into the second holding part 212, as shown in FIG. 1, between the first holding part 211 and the second holding part 212. A predetermined space is formed in the. That is, according to the present embodiment, the deposition gas injected onto the substrate W is discharged through the space with the second holding part 212 along the surface of the first holding part 211. Since the deposition gas may flow into the exhaust baffle 111, the residence time of the deposition gas may be sufficiently increased, and sufficient exhaust gas emission may be secured so that exhaust failure does not occur. have.

On the other hand, the first holding part 211 is not formed in a ring shape that surrounds the entire circumference of the susceptor 120 may be an embodiment formed only at a portion corresponding to the outside of the substrate (W). That is, even if the first holding part 211 is installed only on a part of the susceptor 120, the outer side of the substrate W is formed so as to surround the flow of the deposition gas provided on the surface of the substrate W. By bypassing the first holding part 211 can delay the discharge of the deposition gas to the exhaust baffle 111 and can effectively increase the residence time of the deposition gas. In this case, although the first exhaust groove 213 may be formed in the first holding part 211, a portion where the first holding part 211 is not formed serves as the first exhaust groove 213. The first exhaust groove 213 may be omitted in the first retaining part 211 because it can be sufficiently replaced.

However, the shape and position of the gas holding unit 210 is not limited by the drawings, and the gas holding unit 210 is formed on a flow path through which the deposition gas flows into the exhaust baffle 111 so that the deposition gas flows. It may have a variety of shapes and locations that can interfere with the.

Hereinafter, the gas holding unit 220 according to the second embodiment of the present invention will be described with reference to FIGS. 4 to 6.

4 is a cross-sectional view of an atomic layer deposition apparatus according to a second embodiment of the present invention, FIG. 5 shows a showerhead in the atomic layer deposition apparatus of FIG. 4, and FIG. 6 shows a susceptor.

Here, the atomic layer deposition apparatus according to the second embodiment has substantially the same components as those of the first embodiment described above except for the gas holding unit, and hereinafter, the same reference numerals are used for the same components as the first embodiment. In this case, duplicate descriptions will be omitted.

Compared to the gas holding unit 210 according to the first embodiment, the gas holding unit 220 according to the second embodiment has a first holding part 221 protruding from the surface of the shower head 130. . In addition, the first holding part 221 is formed in the first and second source regions 311 and 312 in the shower head 130 to increase the residence time of the source gas.

Referring to the drawings, the gas holding part 220 includes a first holding part 221 protruding from a surface of the shower head 130 and a second holding part 222 recessed to a predetermined depth from the susceptor 120. It includes.

Here, the gas holding unit 220 is intended to improve the deposition efficiency by increasing the residence time of the deposition gas to increase the time that the substrate (W) is exposed to the deposition gas. That is, the gas holding unit 220 is intended to increase the residence time of the source gas to form a substantially thin film of the deposition gas. In addition, since the purge gas serves to remove unreacted source gas in the deposition process, the purge gas is preferably discharged quickly.

In this embodiment, the first holding part 221 is formed only in the first and second source regions 311 and 312. For example, the first holding part 221 is formed along the circumference of the first and second source regions 311 and 312 at the outer circumferential edge of the shower head 130. That is, the first and second source regions 311 and 312 have a fan shape surrounded by the exhaust line 140 and the first holding part 221 having two 'V' shapes.

The second holding part 222 is formed to accommodate the first holding part 221 at a position corresponding to the first holding part 221 in the susceptor 120. Here, the second holding part 222 has a ring shape continuously formed along the outer periphery of the susceptor 120 to allow the susceptor 120 to rotate.

As in the first embodiment, the gas holding part 220 is formed such that the first holding part 221 is not inserted into the second holding part 222 or the first holding part 221 is formed. It may be formed to be partially inserted into the second holding part 222.

In addition, the first holding part 221 is formed with a first exhaust groove 223 for exhausting the exhaust gas from the first and second source regions 311 and 312, and the second holding part 222. In addition, a second exhaust groove 224 is formed at a position corresponding to the first holding part 221. The first exhaust groove 223 is formed by opening the first holding part 221 to a predetermined width, and the second exhaust groove 224 is formed in a form in which the second holding part 222 is partially embedded. do.

According to the present embodiment, the source gas injected from the first and second source regions 311 and 312 is delayed from being discharged to the exhaust baffle 111 by the first holding part 221 and the first gas is discharged. And the contact time of the substrate W in the second source regions 311 and 312 is increased. In addition, since no structure is formed in the purge regions 313 and 314 to prevent the flow of the purge gas, the purge gas is discharged to the exhaust baffle 111 faster than the source gas.

However, the shape and position of the gas holding unit 220 is not limited by the drawings, and the gas holding unit 220 is formed on a flow path through which the deposition gas flows into the exhaust baffle 111 so that the deposition gas flows. It may have a variety of shapes and locations that can interfere with the.

Hereinafter, the gas holding unit 230 according to the third embodiment of the present invention will be described with reference to FIGS. 7 and 8.

7 is a cross-sectional view of an atomic layer deposition apparatus according to a third embodiment of the present invention, and FIG. 8 illustrates a showerhead in the atomic layer deposition apparatus of FIG. 7.

Here, the atomic layer deposition apparatus according to the third embodiment has substantially the same components as those of the above-described first or second embodiment except for the gas holding unit, and hereinafter has the same configuration as the first and second embodiments. The same reference numerals are used for elements, and overlapping descriptions will be omitted.

In the above-described embodiments, the gas holding part has a pair of protruding first holding parts and recessed second holding parts, but the gas holding part 230 according to the third embodiment protrudes only from the surface of the shower head 130. It is formed and the recess portion for receiving the gas holding portion 230 is not formed.

Referring to the drawings, the gas holding part 230 is formed to protrude a predetermined height from the shower head 130, the height does not contact the susceptor 120 to enable the susceptor 120 to rotate To protrude.

The gas holding part 230 is formed along the circumferences of the first and second source regions 311 and 312 so as to effectively increase the residence time of the source gas.

In addition, a portion of the gas holding part 230 is opened so that the gas holding part 230 opens the gas holding part 230 to discharge the exhaust gas from the first and second source regions 311 and 312. A plurality of exhaust grooves 233 are formed to communicate the inside and outside of the.

The gas holding part 230 has a smooth surface shape so that the exhaust gas can be smoothly discharged to the exhaust baffle 111. For example, as shown in Figure 7, the gas holding portion 230 is formed in a semi-circular or semi-elliptic shape, in particular, the upper end of the gas holding portion 230 has a curved shape, including a semi-circular.

Here, unlike the above-described embodiment, the gas holding unit 230 may be formed in the susceptor 120. In this case, the gas holding part 230 surrounds the entire circumference of the susceptor 120 so as to increase the residence time of the source gas on the plurality of substrates W seated on the susceptor 120. Has a ring shape.

However, the shape and position of the gas holding unit 230 is not limited by the drawings, and the gas holding unit 230 is formed on the flow path through which the deposition gas flows into the exhaust baffle 111 so that the deposition gas flows. It may have a variety of shapes and locations that can interfere with the.

Hereinafter, the gas holding unit 240 according to the fourth embodiment of the present invention will be described with reference to FIGS. 9 and 10.

9 is a cross-sectional view of an atomic layer deposition apparatus according to a fourth embodiment of the present invention, and FIG. 10 illustrates a susceptor and a chamber in the atomic layer deposition apparatus of FIG. 9.

Here, the atomic layer deposition apparatus according to the fourth embodiment has substantially the same components as those of the first to third embodiments described above, except for the gas holding unit, and hereinafter has the same configuration as the first to third embodiments. The same reference numerals are used for elements, and overlapping descriptions will be omitted.

The gas holding unit 240 according to the fourth embodiment is formed in the exhaust baffle 111, not the susceptor 120 or the shower head 130, unlike the above-described embodiments.

Referring to the drawings, the gas holding part 240 is formed to protrude a predetermined height from the exhaust baffle 111.

The gas holding part 240 may delay the speed at which the deposition gas injected into the substrate W flows into the chamber exhaust hole 152, and thus the substrate W and the chamber in the exhaust baffle 111. It is located between the exhaust holes 152.

The exhaust baffle 111 has a height equal to or slightly higher than the susceptor 120, and the chamber exhaust hole 152 is formed on an upper surface of the exhaust baffle 111. The gas holding part 240 protrudes a predetermined height from the upper surface of the exhaust baffle 111 and has a height equal to or higher than the height of the surface of the shower head 130 so as to increase the residence time of the deposition gas. .

The gas holding part 240 is formed at positions corresponding to the first and second source regions 311 and 312 to increase the residence time of the source gas but to quickly discharge the purge gas.

In addition, the gas holding part 240 is formed with a plurality of exhaust grooves 243 for exhausting the exhaust gas. Here, since the gas holding part 240 is formed to surround a part of the susceptor 120 and the upper part of the gas holding part 240 is open, the gas holding part 240 has a left and right sides and the gas holding part ( Since the exhaust gas may flow into the chamber exhaust hole 152 on the 240, the exhaust groove 243 may be omitted.

The gas holding part 240 has a smooth surface shape so that the exhaust gas can be smoothly discharged to the exhaust baffle 111. For example, as shown in FIGS. 9 and 10, the gas holding part 240 is formed in a semicircle or semi-ellipse.

Here, the gas holding part 240 may correspond to the first and second source regions 311 and 312, but may be formed only in a portion so as to surround the outside of the substrate (W). In addition, the gas holding part 240 may be formed in a ring shape so as to surround all the outer periphery of the susceptor 120 along the exhaust baffle 111.

However, the shape and position of the gas holding part 240 is not limited by the drawings, and the gas holding part 240 is formed on a flow path through which the deposition gas flows into the exhaust baffle 111 so that the deposition gas flows. It may have a variety of shapes and locations that can interfere with the.

As described above, although described with reference to the preferred embodiment of the present invention, those skilled in the art various modifications and variations of the present invention without departing from the spirit and scope of the invention described in the claims below I can understand that you can.

1 is a cross-sectional view for explaining an atomic layer deposition apparatus according to a first embodiment of the present invention;

2 is a plan view showing an example of a showerhead in the atomic layer deposition apparatus of FIG.

3 is a perspective view illustrating an example of a susceptor in the atomic layer deposition apparatus of FIG. 1;

4 is a cross-sectional view for explaining an atomic layer deposition apparatus according to a second embodiment of the present invention;

FIG. 5 is a plan view illustrating an example of a showerhead in the atomic layer deposition apparatus of FIG. 4; FIG.

6 is a perspective view illustrating an example of a susceptor in the atomic layer deposition apparatus of FIG. 4;

7 is a cross-sectional view for explaining an atomic layer deposition apparatus according to a third embodiment of the present invention;

8 is a plan view illustrating an example of a showerhead in the atomic layer deposition apparatus of FIG. 7;

9 is a sectional view for explaining an atomic layer deposition apparatus according to a fourth embodiment of the present invention;

FIG. 10 is a plan view illustrating an example of a showerhead in the atomic layer deposition apparatus of FIG. 9.

<Explanation of symbols for the main parts of the drawings>

100: atomic layer deposition apparatus 110: process chamber

111: exhaust baffle 120: susceptor

125: rotation axis 130: shower head

131, 311, 312, 313, 314: spraying area 132: spraying hole

140: exhaust line 142: exhaust hole

150: chamber exhaust 152: chamber exhaust hole

155: exhaust pump 210: gas holding unit

211, 212: Maintenance parts 213, 214: Exhaust groove

Claims (14)

Process chambers; A susceptor provided in the process chamber and configured to rotate with a plurality of substrates mounted thereon; A shower head provided on the susceptor and having a plurality of source regions for injecting source gas and a plurality of purge regions for injecting purge gas among deposition gases for depositing thin films on the plurality of substrates; And A gas holding part provided at an outer periphery of the susceptor and the shower head to increase a time for which the injected deposition gas stays on the substrate surface; Including, The gas holding part protrudes from one surface of the susceptor and the shower head, and includes a first holding part having a ring shape divided into a plurality of parts to discharge the exhaust gas, and the first holding part on the other surface. And a second holding part recessed in a position corresponding to the atomic layer deposition apparatus. The method of claim 1, And the first holding part has a ring shape protruding a predetermined height along an outer circumference of one of the susceptor and the shower head. delete The method of claim 1, And the first holding part has a height lower than a surface on which the second holding part is formed, or has a height accommodated in the second holding part. delete The method of claim 1, The first holding part is formed in the source region in the shower head, And the second holding part has a circular shape along the circumference of the susceptor. Process chambers; A susceptor provided in the process chamber and configured to rotate with a plurality of substrates mounted thereon; A shower head provided on the susceptor and having a plurality of source regions for injecting source gas and a plurality of purge regions for injecting purge gas among deposition gases for depositing thin films on the plurality of substrates; And A gas holding part protruding from an outer circumference of one of the susceptor and the shower head at a position corresponding to the source region to increase a time for which the injected deposition gas stays on the substrate surface; Atomic layer deposition apparatus comprising a. The method of claim 7, wherein And the gas holding part has a height lower than a distance between the susceptor and the shower head. delete Process chambers; An exhaust baffle provided along a wall of the process chamber and having a plurality of exhaust holes for exhausting the exhaust gas in the process chamber; A susceptor provided in the process chamber and configured to rotate with a plurality of substrates mounted thereon; A shower head provided on the susceptor and spraying a deposition gas for depositing thin films on the plurality of substrates; And A gas holding part protruding from a surface of the exhaust baffle to a predetermined height, delaying discharge of the injected deposition gas into the exhaust baffle, and having a plurality of ring shapes divided into a plurality of rings to allow the exhaust gas to flow into the exhaust hole; Atomic layer deposition apparatus comprising a. The method of claim 10, And the gas holding part is formed at a position adjacent to the susceptor on the surface of the exhaust baffle and has a ring shape corresponding to an outer periphery of the susceptor. delete delete The method of claim 10, The shower head is formed with a plurality of source regions for injecting the source gas and a plurality of purge regions for injecting the purge gas, And the gas holding part is formed at a position corresponding to the source region among the exhaust baffles.

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