CN115786881A - Chemical vapor deposition equipment and gas mixing device thereof - Google Patents
Chemical vapor deposition equipment and gas mixing device thereof Download PDFInfo
- Publication number
- CN115786881A CN115786881A CN202111435929.3A CN202111435929A CN115786881A CN 115786881 A CN115786881 A CN 115786881A CN 202111435929 A CN202111435929 A CN 202111435929A CN 115786881 A CN115786881 A CN 115786881A
- Authority
- CN
- China
- Prior art keywords
- gas
- channel
- main
- mixing device
- gas channel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Abstract
The utility model provides a chemical vapor deposition equipment and gas mixing arrangement thereof, chemical vapor deposition equipment contains reaction chamber and is located the gas shower head of reaction chamber inside top, and the gas mixing arrangement who is located gas shower head top contains: a body structure having a primary gas passage and a secondary gas passage, and a gas flow plug disposed within the primary gas passage. The gas inlet end of the main gas channel is connected to a first reaction gas source, the gas outlet end of the main gas channel faces the gas spray header, the gas inlet end of the second gas channel is connected to a second reaction gas source, and the gas outlet end of the main gas channel is connected to the main gas channel. The airflow plug is provided with a columnar bullet body part, the bullet body part comprises a first end and a second end, the first end faces the air inlet end of the main gas channel, the second end faces the air outlet end of the main gas channel, and the second end comprises an air guide part in a conical structure. The invention can realize higher gas mixing uniformity, thereby reducing the process complexity of the gas spray header and further reducing the equipment cost.
Description
Technical Field
The invention relates to chemical vapor deposition equipment and a gas mixing device thereof.
Background
Chemical Vapor Deposition (CVD) equipment needs to pre-mix the reaction gases before performing the deposition reaction, so that the deposition gas on the substrate surface is a mixed gas with a set ratio according to the process conditions, and the uniformity of the distribution of the mixed gas above the substrate surface determines the uniformity of the deposition effect on the substrate surface.
In the prior art, the mixed gas is generally uniformly conveyed to the upper part of the substrate through the gas spray header with the holes, but the mixed gas is not uniformly distributed above the gas spray header before entering the gas spray header, so that the requirement of the industry development trend on the deposition uniformity cannot be met simply by depending on the gas homogenizing function of the gas spray header along with the increasingly strong bearing function of a semiconductor device.
The statements herein merely provide background information related to the present disclosure and may not necessarily constitute prior art.
Disclosure of Invention
The invention aims to provide chemical vapor deposition equipment and a gas mixing device thereof, which have the advantages of simple structure, low processing and manufacturing cost and capability of realizing higher gas mixing uniformity.
In order to achieve the above object, the present invention provides a gas mixing device for a chemical vapor deposition apparatus, the chemical vapor deposition apparatus comprising a reaction chamber and a gas shower head located above the inside of the reaction chamber, the gas mixing device being located above the gas shower head and comprising:
a body structure having a primary gas channel and a secondary gas channel; the gas inlet end of the main gas channel is connected to a first reaction gas source, and the gas outlet end of the main gas channel faces the gas spray header; the gas inlet end of the second gas channel is connected to a second reaction gas source, and the gas outlet end of the second gas channel is connected to the main gas channel;
and, an airflow plug disposed within the primary gas channel; the airflow plug is provided with a columnar bullet body part, a first end part and a second end part, wherein the first end part is connected with the bullet body part, the first end part faces the air inlet end of the main air channel, the second end part faces the air outlet end of the main air channel, the second end part is in a conical structure, and the air outlet end of the second air channel faces the bullet body part.
The air inlet end of the main air channel is provided with a conical inner wall structure, and the conical inner wall structure extends to the position of the bullet body of the airflow plug.
The cross section of the second gas channel is annular, and the second gas channel and the main gas channel are arranged concentrically.
The opening width of the conical inner wall structure is gradually reduced towards the direction of the air inlet end of the main gas channel, and the conical vertex angle of the conical inner wall structure faces upwards.
The height of the conical inner wall structure is greater than or equal to that of the second end part of the airflow plug.
The first end of the airflow plug is of a conical structure.
The conical vertex angle of the first end part of the airflow plug is larger than that of the conical inner wall structure of the main gas channel.
The length of the body of the air flow plug is smaller than the length of the main gas channel.
The width of the body of the air flow plug is less than the minimum width of the main gas passage.
The airflow plug has a connection portion that fixedly disposes the airflow plug within the main gas passage.
The connecting part is annular and is connected with the bomb body part of the airflow plug through a plurality of connecting ribs, and the connecting part is embedded and fixed to the air inlet end of the main gas channel.
The gas outlet end of the second gas channel is arranged at a position higher than the second end part of the gas flow plug.
The main body structure is provided with at least two other gas channels, wherein the gas inlet ends of the other gas channels are connected to at least one other reaction gas source, and the gas outlet ends of the other gas channels are connected to the main gas channel.
The air outlet ends of the other air channels are arranged at positions higher than the second end part of the bullet-shaped airflow plug.
The main body structure is provided with at least two cleaning gas channels, the gas inlet ends of the cleaning gas channels are connected to a cleaning gas source, and the gas outlet ends of the cleaning gas channels face the gas spray header.
The secondary gas channels and the cleaning gas channels are uniformly arranged around the main gas channel.
The gas mixing device also comprises a baffle structure arranged below the gas outlet end of the main gas channel on the main body structure.
The present invention also provides a chemical vapor deposition apparatus comprising:
a reaction cavity is arranged in the reaction chamber,
the gas mixing device is arranged at the top of the reaction chamber;
the gas spray header is arranged below the gas mixing device;
the base is arranged in the reaction cavity and used for placing a substrate to be processed;
a heater disposed below the susceptor.
The airflow plug is arranged in the main gas channel, so that the airflow in the main gas channel can be stabilized, the generation of airflow vortex and turbulence is prevented, the shape and the size of the inner wall of the main gas channel with inclination is designed by adjusting the shape and the size of the airflow plug and the gap between the airflow plug and the inner wall of the main gas channel, and the positions of the rest gas channels and the positions of the air outlet ends of the rest gas channels on the main gas channel are reasonably arranged, so that the mixed gas in the main gas channel can achieve the optimal gas mixing uniformity. The gas spraying head has the advantages of simple structure and low processing and manufacturing cost, and can realize higher gas mixing uniformity, thereby reducing the process complexity of the gas spraying head and further reducing the equipment cost.
Drawings
FIG. 1 is a schematic structural diagram of a chemical vapor deposition apparatus according to the present invention.
Fig. 2 is a schematic structural view of the gas mixing device.
FIG. 3 is a schematic diagram of the structure of an airflow block in one embodiment.
Fig. 4 is a schematic structural view of an airflow plug in another embodiment.
FIG. 5 is a schematic view of the structure of the airflow plug and the main gas channel in another embodiment.
FIG. 6 is a top cross-sectional view of a main gas gallery and other gas galleries in a third embodiment of the invention.
FIG. 7 is a partial schematic view of a main gas duct and a gas flow plug in a fourth embodiment of the invention.
Fig. 8 is a schematic view of gas distribution at the gas shower head corresponding to the configuration of fig. 7.
Fig. 9 is a partial structural view of a main gas passage and an airflow plug in a fifth embodiment of the present invention.
Fig. 10 is a schematic view of gas distribution at a gas shower head corresponding to the configuration of fig. 9.
FIG. 11 is a partial schematic view of a main gas duct and a gas flow plug in a sixth embodiment of the invention.
Fig. 12 is a schematic view of gas distribution at a gas shower head corresponding to the structure in fig. 11.
Detailed Description
The preferred embodiment of the present invention will be described in detail below with reference to fig. 1 to 12.
As shown in fig. 1, the present invention provides a chemical vapor deposition apparatus, which comprises a reaction chamber 1 and a gas shower head 2 disposed above the inside of the reaction chamber, wherein a gas mixing device 3 is disposed above the gas shower head 2, the gas mixing device 3 can be disposed inside the reaction chamber 1 or at the top of the reaction chamber 1, the gas mixing device 3 is connected to a plurality of gas sources 7, and the gas sources 7 can provide a plurality of reaction gases and cleaning gases. The reaction chamber 1 is internally provided with a base 4 for placing a substrate 5 to be processed, and a heater 6 is arranged below the base 4 to keep the substrate 5 at a temperature required by the process. At least two kinds of reaction gases enter the gas mixing device 3 from the gas source 7, the gas mixing device 3 uniformly mixes the reaction gases, and the mixed reaction gases enter the reaction cavity 1 through the gas spray header 2 to treat the substrate 5 to be treated. The chemical vapor deposition equipment further comprises an air extractor 8 positioned below the reaction cavity, after the substrate 5 is processed, the air extractor 8 exhausts the gas in the reaction cavity 1, clean gas is introduced into the reaction cavity 1 through the gas mixing device 3 and the gas spray header 2, the reaction gas is prevented from remaining, and the clean gas is exhausted out of the reaction cavity 1 through the air extractor 8.
In one embodiment of the present invention, the gas mixing device 3 is disposed above the gas shower head 2, and the gas mixing device 3 comprises a main body structure 301, which is composed of a first main body 301-1, a second main body 301-2 and a cover 301-3: the first body 301-1 has a cavity therein, the second body 301-2 is disposed in the cavity and provided with an inlet channel connected to the gas source 7, the first body 301-1 and the second body 301-2 are combined to form a main gas channel 302, the main gas channel 302 is disposed at a central portion of the main body structure 301, an inlet end of the main gas channel 302 is connected to a first reactive gas source (not shown in the figure), an outlet end of the main gas channel 302 faces the gas shower head 2, and the first reactive gas 31 is introduced into the main gas channel 302; the first body 301-1 further has at least two cleaning gas channels 305 therein, wherein the cleaning gas channels 305 have an inlet end connected to a cleaning gas source (not shown) and an outlet end facing the gas shower head 2, the cleaning gas channels 305 are not communicated with the main gas channels 302, and the cleaning gas channels 305 are filled with cleaning gas 33; the second body 301-2 and the first body 301-1 are combined to form a second gas channel 303, an inlet end of the second gas channel 303 is connected to a second reactive gas source (not shown), an outlet end of the second gas channel 303 is connected to the main gas channel 302 from the side, and a second reactive gas 32 is introduced into the second gas channel 303; the combined main body structure is convenient to process, the consistency of workpieces is improved, the complex air channel structure of the invention is easier to form, and in other embodiments, the main air channel, the second air channel and the cleaning air channel can be processed in one main body. The cover 301-3 is disposed at the bottom of the first body 301-1, facing the gas shower head 2, for supporting a gas mixing device, and in some embodiments, is also a top cover of the deposition apparatus.
As shown in fig. 3, the gas flow plug 304 is disposed in the main gas channel 302, and the gas flow plug 304 has a cylindrical body 3041, and a first end 3042 and a second end 3043 connecting the body 3041, wherein the first end 3042 faces an air inlet end of the main gas channel, and the second end 3043 faces an air outlet end of the main gas channel 302, and in this embodiment, the first end is a planar structure. The second end 3043 is conical to allow the two reaction gases to be mixed sufficiently and to be guided to flow toward the reaction chamber, so that the two gases have a stable diffused gas flow distribution without generating adverse distributions such as a vortex. Therefore, the second end 3043 plays an important role as an airflow guide member in the present invention. Other polygonal pyramid bodies may be used for the second end, and any other polygonal pyramid bodies that can achieve a better gas flow distribution of the reactant gas when flowing through the pyramid bodies are also included in the alternative embodiments of the present invention. The airflow plug 304 is fitted into a side wall fixed to the air inlet end of the main gas passage 302 by a coupling portion 3044. In this embodiment, the connecting portion 3044 is annular, the connecting portion 3044 is connected to the body 3041 of the airflow plug 304 through a plurality of connecting ribs, the inner wall of the air inlet end of the main gas channel 302 has a groove, and the shape and size of the groove are matched with the connecting portion 3044, so that the connecting portion 3044 is inserted into and clamped in the groove, and the airflow plug 304 is fixed in the main gas channel 302. The gas flow plug 304 is arranged in the main gas channel 302, so that the gas flow in the main gas channel 302 can be stabilized, the generation of gas flow vortex and turbulence can be prevented, the shape of the inner wall of the main gas channel 302 can be designed by adjusting the shape and the size of the gas flow plug 304 and the gap between the gas flow plug and the inner wall of the main gas channel 302, and the position of the secondary gas channel 303 and the position of the gas outlet end of the secondary gas channel 303 on the main gas channel 302 can be reasonably arranged, so that the mixed gas in the main gas channel 302 can achieve the optimal gas mixing uniformity. As shown in fig. 2, in the present embodiment, the secondary gas channels 303 are disposed at the periphery of the main gas channel 302, the cross section of the secondary gas channel 303 is annular, may be a complete circle, may be a half circle, and may even be a fan-ring, if the cross section of the secondary gas channel 303 is a complete circle, a plurality of gas inlets may be uniformly disposed at the gas inlet end of the secondary gas channel 303 to ensure uniformity and stability of the gas inlet, if the cross section of the secondary gas channel 303 is a half circle, two secondary gas channels 303 may be disposed around the main gas channel 302, likewise, a plurality of gas inlets may be uniformly disposed at the gas inlet end of each secondary gas channel 303 to ensure uniformity and stability of the gas inlet, if the cross section of the secondary gas channel 303 is a shorter fan-ring, the number of secondary gas channels 303 may be correspondingly increased, all secondary gas channels 303 surround the main gas channel 302, and if the length of the secondary gas channel 303 is a shorter fan-ring, then each secondary gas channel 303 is disposed at a position L1-2, and the primary gas channel 303 may be disposed concentrically with the gas outlet end of the primary gas channel 302 to improve uniformity (i.e., the secondary gas channel 303 is disposed at a position L32, which the mixed reaction gas flow is different from the primary gas channel 302, and the primary gas reaction gas outlet end of the primary gas channel 303 is disposed at the same time, where the primary gas channel 302, the primary gas reaction head 32, where the primary gas mixture is disposed. The main gas channel 302 is designed to have a tapered inner wall structure 3021 at its gas inlet end, and the remaining portion is designed to be a cylindrical structure, the tapered vertex angle of the tapered inner wall structure 3021 is upward, the opening width of the tapered inner wall structure 3021 gradually decreases toward the gas inlet end of the main gas channel 302, the tapered inner wall structure 3021 extends to the position of the body 3041 of the gas plug 304, and the height of the tapered inner wall structure 3021 is greater than or equal to the height of the second end 3043 of the gas plug 304, so that a space is formed between the first end of the gas plug 304 and the tapered inner wall of the main gas channel 302, and when the first reactant gas enters the space from the gas inlet end of the main gas channel 302, a buffering effect is provided, which can sufficiently reduce the flow rate and uniformly diffuse, and achieve the purpose of more uniformly mixing with the second reactant gas in the main gas channel 302. Further, the second end 3043 of the gas plug 304 is designed to be a cone-shaped structure, and the cone-shaped second end 3043 cooperates with the columnar main gas channel 302 to form a space with a gradually expanding gas outlet at the gas outlet of the main gas channel 302, and the second reaction gas is blocked by the gas plug after entering the main gas channel 302 and then flows downwards, so that the first reaction gas and the second reaction gas can be uniformly mixed in the gradually expanding space for a sufficient time and can be diffused downwards at a uniform flow rate in a horizontal plane, and the mixed gas in the main gas channel 302 can achieve the optimal gas mixing uniformity. It should be noted that the length of the body 3041 of the gas flow plug 304 is smaller than the length of the main gas channel 302, so as to avoid the gas flow plug 304 extending out of the main gas channel 302, thereby maximizing the effective gas channel at the outlet end of the main gas channel 302 and also improving the mixing uniformity of the gases. Moreover, since the air inlet end of the main gas channel 302 has a tapered inner wall structure, the width of the main gas channel 302 varies, and in order to ensure that a gap exists between the gas plug 304 and the inner wall of the main gas channel 302 to allow the reaction gas to smoothly pass through, it is necessary to ensure that the width of the body 3041 of the gas plug 304 is smaller than the minimum width of the main gas channel 302.
In the present embodiment, as shown in fig. 2 and 3, the first reactive gas 31 entering from the gas inlet end of the main gas channel 302 is blocked and divided by the body 3041 of the gas flow plug 304, and the first reactive gas 31 flows toward the gas outlet end of the main gas channel 302 along the gas flow channel formed between the gas flow plug 304 and the inner wall of the main gas channel 302. The second reactant gas 32 entering from the inlet end of the second gas channel 303 enters the main gas channel 302 from the outlet end of the second gas channel 303, and after the second reactant gas 32 is mixed with the first reactant gas 31 at the position of the body 3041 of the gas flow plug 304, the second reactant gas continues to flow along the gas flow channel formed between the second end 3043 of the gas flow plug 304 and the inner wall of the main gas channel 302 toward the outlet end of the main gas channel 302, and finally all the gas flows join together at the end of the second end 3043 of the gas flow plug 304 and flow toward the outlet end of the main gas channel 302. In this process, the first reactant gas 31 and the second reactant gas 32 are fully mixed, and the gas flow in the main gas channel 302 is stabilized, so that the generation of gas flow vortex and turbulent flow is avoided, and the mixed gas achieves the optimal gas mixing uniformity.
In this embodiment, since the gas flow plug 304 is provided in the main gas duct 302, a good gas mixing uniformity is obtained, and thus the structure of the gas shower head 2 can be simplified accordingly. The size and the number of the gas through holes formed in the gas spray header 2 plate are lower. As shown in fig. 2, a baffle structure 306 is disposed below the gas outlet ends of all gas channels on the main body structure 301, the baffle structure 306 is located above the gas shower head 2, the baffle structure 306 has a buffering effect on the mixed gas flow, diffuses the small-range flowing gas into the larger-range flowing gas in the horizontal plane, and simultaneously improves the mixing time of the gas, so that the gas can be further uniformly mixed, and the mixed gas reaching the surface of the gas shower head 2 can be more uniformly distributed.
In another embodiment of the present invention, as shown in fig. 4, the airflow plug 304 has a cylindrical bullet body 3041, and a first end 3042 and a second end 3043 connecting the bullet body 3041, wherein the first end 3042 faces the air inlet end of the main gas channel 302, the second end 3043 faces the air outlet end of the main gas channel 302, and the second end 3043 is configured to be a tapered structure. In this embodiment, the shape of the airflow plug 304 is changed, and the first end 3042 of the airflow plug 304 is also configured to be a tapered structure to match the tapered inner wall structure 3021 on the air inlet end of the main gas passage 302. The gas flow plug 304 is disposed in the main gas channel 302 to stabilize the gas flow in the main gas channel 302 and prevent the generation of gas flow vortex and turbulence, and the shape, size and gap between the gas flow plug 304 and the inner wall of the main gas channel 302 can be adjusted to achieve the best gas mixing uniformity of the mixed gas in the main gas channel 302. As shown in fig. 5, in order to obtain a more stable gas flow, it should be ensured that the conical vertex angle β of the first end 3042 of the gas plug 304 is greater than the conical vertex angle α of the conical inner wall structure 3021 of the main gas channel 302, so as to adjust the flow rate of the first reactive gas before mixing with the second reactive gas, and then mix with the second reactive gas after being reduced to a suitable flow rate by the gas plug, thereby improving the mixing uniformity. The first end 3042, which is cone-shaped, functions similarly to the second end 3043 and can also guide to form a better gas flow distribution pattern, forming another gas guiding portion located upstream of the gas flow mixing channel.
In the present embodiment, as shown in fig. 4 and 5, the first reactive gas 31 entering from the gas inlet end of the main gas channel 302 is blocked and divided by the first end 3042 of the gas flow plug 304 at the gas inlet end, and the first reactive gas 31 flows toward the gas outlet end of the main gas channel 302 along the gas flow channel formed between the first end 3042 of the gas flow plug 304 and the inner wall of the main gas channel 302. The second reactant gas 32 entering from the inlet end of the second gas channel 303 enters the main gas channel 302 from the outlet end of the second gas channel 303, and after the second reactant gas 32 is mixed with the first reactant gas 31 at the position of the body 3041 of the gas flow plug 304, the second reactant gas continues to flow along the gas flow channel formed between the second end 3043 of the gas flow plug 304 and the inner wall of the main gas channel 302 toward the outlet end of the main gas channel 302, and finally all the gas flows join together at the end of the second end 3043 of the gas flow plug 304 and flow toward the outlet end of the main gas channel 302. In this process, the first reactant gas 31 and the second reactant gas 32 are fully mixed, and the gas flow in the main gas channel 302 is stabilized, so that the generation of gas flow vortex and turbulent flow is avoided, and the mixed gas achieves the optimal gas mixing uniformity.
The invention is not limited to mixing only two reactive gases and can be extended to mixing multiple reactive gases. In the third embodiment of the present invention, as shown in fig. 6, a main gas channel 302 is disposed at the central position of the main body structure 301, and two second gas channels 303 and two third gas channels 307 are further disposed on the main body structure 301, since the second gas channels 303 and the third gas channels 307 are both required to introduce reaction gases into the main gas channel 302 for mixing, the second gas channels 303 and the third gas channels 307 are disposed along the channel walls of the main gas channel 302, usually two second gas channels 303 and two third gas channels 307 are disposed around the main gas channel 302, and the second gas channels 303 and the third gas channels 307 are both disposed concentrically with the main gas channel 302, so as to improve the uniformity of gas mixing in the main gas channel 302. The inlet end of the main gas channel 302 is connected to a first reactive gas source (not shown), the outlet end faces the gas shower head 2, the inlet end of the second gas channel 303 is connected to a second reactive gas source (not shown), the outlet end is connected to the main gas channel 302, the inlet end of the third gas channel 307 is connected to a third reactive gas source (not shown), and the outlet end is connected to the main gas channel 302, so that it is required to ensure that the position where the outlet end of the second gas channel 303 and the position where the outlet end of the third gas channel 307 are both arranged is higher than the position where the second end 3043 of the gas flow plug 304 is arranged, so as to improve the mixing uniformity of the second reactive gas and the third reactive gas in the main gas channel 302. Since the cleaning gas does not need to be mixed with the reaction gas, and it is not necessary to communicate the cleaning gas channel 305 with the main gas channel 302, the cleaning gas channel 305 may be disposed at the periphery of the secondary gas channel 303 and the tertiary gas channel 307, and does not need to be disposed next to the main gas channel 302. The clean gas channel 305 still needs to be evenly disposed around the main gas channel 302 to ensure even distribution of clean gas to the gas showerhead.
In this embodiment, the first reactant gas entering from the inlet end of the main gas channel 302 is blocked and diverted by the gas flow plug 304 at the inlet end, and the first reactant gas flows along the gas flow channel formed between the gas flow plug 304 and the inner wall of the main gas channel 302 toward the outlet end of the main gas channel 302. The second reactant gas entering from the gas inlet end of the second gas channel 303 enters the main gas channel 302 from the gas outlet end of the second gas channel 303, the third reactant gas entering from the gas inlet end of the third gas channel 307 enters the main gas channel 302 from the gas outlet end of the third gas channel 307, the second reactant gas and the third reactant gas continue to flow along the gas flow channel formed between the second end 3043 of the gas flow plug 304 and the inner wall of the main gas channel 302 toward the gas outlet end of the main gas channel 302 after being mixed with the first reactant gas 31 at the position of the body 3041 of the gas flow plug 304, and finally all the gas flows join together at the end of the second end 3043 of the gas flow plug 304 and flow toward the gas outlet end of the main gas channel 302. In this process, the first reactive gas, the second reactive gas and the third reactive gas are fully mixed, and the gas flow in the main gas channel 302 is stabilized, so that the generation of gas flow vortex and turbulent flow is avoided, and the mixed gas achieves the optimal gas mixing uniformity.
The gas mixing uniformity which can be achieved by the gas mixing device provided by the invention is tested, and the effectiveness of the gas mixing device provided by the invention is evaluated by testing the gas distribution of the gas spray header towards the surface of one side of the gas mixing device.
As shown in fig. 7, in the fourth embodiment of the present invention, the air inlet end of the main air channel 302, which is originally configured in a columnar structure, is designed as a tapered inner wall structure 3021, the tapered apex angle of the tapered inner wall structure 3021 is upward, the opening width of the tapered inner wall structure 3021 gradually decreases toward the air inlet end of the main air channel 302, and the airflow plug 304 is configured at the first end of the plane. Fig. 8 is a graph of the mixed gas flow distribution at the top surface of the showerhead through a simulation using the configuration of fig. 7, wherein the same color can represent the same gas flow, and it can be seen that the gas distribution at the showerhead surface now exhibits a substantially symmetrical distribution, with improved uniformity.
As shown in fig. 9, in the fifth embodiment of the present invention, on the basis of the fourth embodiment, the height of the tapered inner wall structure 3021 of the main gas passage 302 is increased by 80%, and thus the space formed by the gas plug and the tapered inner wall structure becomes large, and the structure of the gas plug 304 is not changed. As can be seen from fig. 10, by increasing the height of the tapered inner wall structure 3021, the gas mixing uniformity can be greatly improved.
As shown in fig. 11, in a sixth embodiment of the present invention, in addition to the fifth embodiment, the mechanism of the airflow plug 304 is changed, and the first end 3042 of the airflow plug 304 is also provided with a tapered structure. As can be seen from fig. 12, the uniformity of gas mixing can be greatly improved by providing the first end 3042 of the gas flow plug 304 with a tapered structure.
The airflow plug is arranged in the main gas channel, so that the airflow in the main gas channel can be stabilized, the generation of airflow vortex and turbulence is prevented, the shape and the size of the inner wall of the main gas channel with inclination is designed by adjusting the shape and the size of the airflow plug and the gap between the airflow plug and the inner wall of the main gas channel, and the positions of the rest gas channels and the positions of the air outlet ends of the rest gas channels on the main gas channel are reasonably arranged, so that the mixed gas in the main gas channel can achieve the optimal gas mixing uniformity. The gas spraying head has the advantages of simple structure and low processing and manufacturing cost, and can realize higher gas mixing uniformity, thereby reducing the process complexity of the gas spraying head and further reducing the equipment cost.
The chemical vapor deposition process of the present invention is suitable for depositing refractory metals such as tungsten into the connection holes in the wafer, wherein the WF6 containing tungsten or compounds of tungsten and organic groups flowing into the main gas channel 302 are fed into the reaction chamber by the carrier gases Ar, he, etc. The reaction gas such as silane, B2H2, etc. is supplied into the reaction chamber through the second gas channel 303. Clean gas channel 305 input N 2 Ar, he, etcAnd cleaning the gas.
It should be noted that, in the embodiments of the present invention, the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc. indicate the orientation or positional relationship shown in the drawings, and are only for convenience of describing the embodiments, but do not indicate or imply that the referred device or element must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the present invention, unless otherwise explicitly stated or limited, the terms "mounted," "connected," "fixed," and the like are to be construed broadly, e.g., as being permanently connected, detachably connected, or integral; can be mechanically or electrically connected; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
While the present invention has been described in detail with reference to the preferred embodiments, it should be understood that the above description should not be taken as limiting the invention. Various modifications and alterations to this invention will become apparent to those skilled in the art upon reading the foregoing description. Accordingly, the scope of the invention should be determined from the following claims.
Claims (18)
1. A gas mixing device for a chemical vapor deposition apparatus, the chemical vapor deposition apparatus comprising a reaction chamber and a gas shower head located above an inside of the reaction chamber, wherein the gas mixing device is located above the gas shower head, and it comprises:
a body structure having a primary gas channel and a secondary gas channel; the gas inlet end of the main gas channel is connected to a first reaction gas source, and the gas outlet end faces the gas spray header;
the gas inlet end of the second gas channel is connected to a second reaction gas source, and the second gas channel also comprises a plurality of second gas outlet nozzles which are connected to the main gas channel; and the number of the first and second groups,
an airflow plug disposed within the primary gas passage; the airflow plug is provided with a columnar body part, the first end of the body part faces the air inlet end of the main gas channel, the second end of the body part faces the air outlet end of the main gas channel, the second end of the body part further comprises a tapered gas guide part, and the plurality of second gas outlet nozzles surround the main gas channel, so that second reaction gas flows through the second gas outlet nozzles and then is ejected towards the body part or the gas guide part.
2. The gas mixing device of claim 1, wherein the gas inlet end of the primary gas passage has a tapered inner wall structure that extends to a location where the body of the gas flow plug is located.
3. The gas mixing apparatus of claim 1, wherein the secondary gas channel is annular in cross-section and is disposed concentrically with the primary gas channel.
4. The gas mixing apparatus of claim 2, wherein the opening width of the conical inner wall structure decreases in a direction toward the gas inlet end of the main gas duct, and the conical apex angle of the conical inner wall structure is upward.
5. The gas mixing device of claim 2, wherein the height of the conical inner wall structure is greater than or equal to the height of the gas guiding portion of the gas flow plug.
6. The gas mixing device of claim 1, wherein the first end of the gas flow plug further comprises a second gas conductance portion having a tapered shape.
7. The gas mixing device of claim 6, wherein the conical apex angle of the secondary gas flow guides of the gas flow plug is greater than the conical apex angle of the conical inner wall structure of the primary gas channel.
8. The gas mixing device of claim 1, wherein the body of the gas flow plug has a length less than the length of the primary gas passage.
9. The gas mixing device of claim 1, wherein the body of the gas flow plug has a width that is less than the minimum width of the primary gas passage.
10. The gas mixing apparatus of claim 1, wherein the gas flow plug has a connection portion that fixedly disposes the gas flow plug within the main gas passage.
11. The gas mixing device of claim 10, wherein the connecting portion is annular and is connected to the body of the gas flow plug by a plurality of connecting ribs, the connecting portion being inset and secured to the inlet end of the primary gas passage.
12. The gas mixing device of claim 1, wherein the second plurality of gas outlet nozzles are disposed at a position higher than the gas guiding portion of the gas plug.
13. The gas mixing device of claim 1, wherein the body structure has at least two additional gas channels with a gas inlet connected to at least one additional reactive gas source and a gas outlet connected to the main gas channel.
14. The gas mixing device of claim 13, wherein the outlet nozzle of the other gas channel is disposed at a position higher than the gas guiding portion of the bullet-shaped gas flow plug.
15. The gas mixing device of claim 1, wherein the body structure has at least two clean gas channels, an inlet end of the clean gas channels being connected to a clean gas source and an outlet end being directed toward the gas showerhead.
16. The gas mixing device defined in claim 15, wherein the secondary gas passages, the clean gas passages are uniformly disposed around the primary gas passage.
17. The gas mixing device of claim 1, further comprising a baffle structure disposed on the body structure below the gas outlet end of the main gas channel.
18. A chemical vapor deposition apparatus, comprising:
a reaction cavity is arranged in the reaction chamber,
a gas mixing device according to any one of claims 1 to 17 disposed at the top of the reaction chamber;
the gas spray header is arranged below the gas mixing device;
the base is arranged in the reaction cavity and used for placing a substrate to be processed;
a heater disposed below the susceptor.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2021110566152 | 2021-09-09 | ||
| CN202111056615 | 2021-09-09 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN115786881A true CN115786881A (en) | 2023-03-14 |
Family
ID=85473635
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111435929.3A Pending CN115786881A (en) | 2021-09-09 | 2021-11-29 | Chemical vapor deposition equipment and gas mixing device thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN115786881A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117737687A (en) * | 2024-02-09 | 2024-03-22 | 上海谙邦半导体设备有限公司 | Gas mixing structure and gas mixing method for tungsten deposition equipment |
-
2021
- 2021-11-29 CN CN202111435929.3A patent/CN115786881A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117737687A (en) * | 2024-02-09 | 2024-03-22 | 上海谙邦半导体设备有限公司 | Gas mixing structure and gas mixing method for tungsten deposition equipment |
| CN117737687B (en) * | 2024-02-09 | 2024-05-10 | 上海谙邦半导体设备有限公司 | Gas mixing structure and gas mixing method for tungsten deposition equipment |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN109594061B (en) | Gas distribution showerhead for semiconductor processing | |
| US11139150B2 (en) | Nozzle for multi-zone gas injection assembly | |
| US20200149166A1 (en) | Flow control features of cvd chambers | |
| CN113430502A (en) | Semiconductor process equipment and mixed air inlet device thereof | |
| KR20170003965A (en) | Device and method for providing a process gas mixture to a cvd or pvd coating device | |
| JP2007081186A (en) | Cvd device | |
| US11118262B2 (en) | Substrate processing apparatus having a gas-mixing manifold | |
| CN112941626B (en) | Air inlet assembly and air inlet device of process chamber and semiconductor processing equipment | |
| KR20070112354A (en) | Semiconductor device fabrication equipment with showerhead | |
| CN115786881A (en) | Chemical vapor deposition equipment and gas mixing device thereof | |
| CN108677167B (en) | Spraying device of semiconductor coating equipment, chemical vapor deposition equipment and operation method thereof | |
| KR100943431B1 (en) | Apparatus for processing substrate with plasma | |
| CN117438277B (en) | Uniform flow component, air inlet device and semiconductor device | |
| CN115505904B (en) | Spray set of many air current passageway | |
| CN101298668B (en) | Plasma generating device | |
| KR20080001651A (en) | Showerhead for a gas supply apparatus | |
| CN115261823A (en) | Gas inlet device of process chamber, semiconductor process equipment and semiconductor processing technology | |
| CN218372512U (en) | Gas inlet structure and tubular PECVD equipment | |
| CN115074704A (en) | Spraying device | |
| CN115537779A (en) | Gas conveying structure and vapor deposition equipment | |
| CN112105759B (en) | Gas box for CVD chamber | |
| CN110158055B (en) | Multi-section spraying assembly | |
| JP2008066662A (en) | Gas head, and semiconductor manufacturing apparatus | |
| CN117051376A (en) | System, apparatus and method for thin film deposition | |
| CN117457468B (en) | Process chamber and air inlet assembly thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |