KR20170003965A - Device and method for providing a process gas mixture to a cvd or pvd coating device - Google Patents

Abstract

The invention relates firstly to a gas supply with inlet channels 22, an overflow barrier 14 and a gas outlet channel 8, said inlet channels each comprising a gas source 21 ) By means of one or more first gas-deflecting members (13) in the first mixing chamber (12), in order to supply the individual gas flows provided by the first gas- The individual gas flows are deflected once or several times and the individual gas flows are mixed together and a first gas flow consisting of all individual gas flows discharged from the first mixing chamber 12 flows over the overflow barrier Flows into the second mixing chamber 15 and the first gas flow is deflected once or several times in the second mixing chamber, in particular by the second gas deflection members 16, From the second mixing chamber 15, the gas flow was provided to discharge into the gas inlet member 5 of CVD- or PVD- coating device (1). The gas supply device is improved such that the effective path lengths of the individual gas flows from the gas sources 21 to the gas inflow member 5 have the same length. The present invention also relates to a method for supplying process gases to a gas inlet member (9) of a CVD- or PVD-coating apparatus, wherein the gases (21) and the gas inlet member (5) It is important that the effective residence times differ by up to 10 milliseconds.

Description

TECHNICAL FIELD [0001] The present invention relates to a device and a method for supplying a process gas mixture to a CVD- or PVD-

The invention relates to a gas supply system having inlet channels, an overflow barrier and a gas outlet channel, the inlet channels being arranged so that the individual gas flows provided by each one gas source are introduced into the first mixing chamber Wherein the individual gas flows are deflected one or more times in the first mixing chamber, in particular by one or more first gas deflection members, and the individual gas flows are mixed together, Wherein a first gas flow consisting of all individual gas flows discharged from the first mixing chamber flows into the second mixing chamber beyond the overflow barrier and the second gas flow in the second mixing chamber, 1 < / RTI > gas flow is deflected once or several times, Or from a chamber into a gas inlet member of a CVD- or PVD-coating apparatus.

In addition, the present invention relates to a method for supplying process gases to a gas inlet member of a CVD- or PVD-coating apparatus, comprising the following steps:

- providing a plurality of process gases in each one gas source;

- separating the process gases from one another with individual gas flows and transferring them from the respective gas sources into the first mixing chamber via one inlet channel, respectively;

- deflecting said individual gas flows by means of first gas deflection members in said first mixing chamber and mixing said individual gas flows together;

 Directing a first gas flow of all individual gases through an overflow barrier into a second mixing chamber;

- deflecting said gas flow, in particular by means of second gas deflection members;

- discharging the gas flow consisting of all individual gas flows from the gas discharge channel into the gas inlet member.

Gas mixing devices are used to mix different gases together, which are introduced into the premixing chamber, for example, by means of a pipe-shaped inlet channel, in which a first mixing process of the gases takes place. The gases are deflected in the premixing chamber and fed to a second mixing chamber, for example a gas mixing pipe. US 2009/0120364 A1 describes a gas mixing apparatus of this type wherein gas is vortexed to improve the mixing process. A gas deflection device is provided in the form of an insert, and the gas deflection device is inserted into the gas mixing pipe.

The mixing devices described herein are used in CVD- or PVD-devices. Devices of this type include a reactor housing, a gas inlet member disposed in the reactor housing, and a susceptor, which may in particular take the form of a showerhead, on which the substrate is placed . The susceptor can be heated or cooled depending on whether a thermally induced chemical reaction occurs on the surface of the substrate, or only a condensation process occurs on the surface of the substrate. A gas mixture is introduced through the gas inlet member into a process chamber disposed over the substrate. The gas mixing device is used to mix the gas mixture of a plurality of individual gases together.

US 7,540,305 B2 proposes a CVD-process chamber having a gas inlet member formed therein, for example a showerhead, into which different process gases can be supplied. A gas mixing device is located upstream of the showerhead.

DE 10 2005 003 984 A1 describes a ring-shaped chamber surrounding a showerhead, and a process gas mixing process takes place in the ring-shaped chamber. The mixing chamber arranged in front of the gas inlet member in the flow direction is also described in US 2003/0019428 Al.

DE 10 2013 113 817 describes a gas mixing device in the form of a flattened cylindrical housing. The housing comprises two mixing chambers. In a mixing chamber disposed radially outwardly, process gases, which are different from one another through star-shaped inlet channels, are fed into the premixing chamber radially outward. Within the premixing chamber are located first gas deflection members that deflect individual gas flows fed into the premixing chamber. In this case, the individual gas flows are deflected transversely with respect to the plane of extension of the inlet plane in which the inlet channels are located. Wherein the individual gas flows reach over a overflow barrier into a second mixing chamber located at the center of the gas mixing device and the second mixing chamber has an opening Gas exhaust channel. Such unpublished publications form the scope of the present invention.

EP 1 252 363 B1 describes a CVD-reactor having a gas mixing system disposed on a gas inlet member directly above the process chamber cover.

US 6,758,591 B1 describes a gas mixing device with a centrally located first mixing chamber in which gas is supplied from a plurality of gas inlet channels arranged in a mold. The supplied gas flows form a turbulent flow in the central mixing chamber and exit axially from the first mixing chamber through a turbulence grid to flow radially outward, wherein the gas flow is about 90 degrees . The premixed gas stream in the first mixing chamber in the center is directed to the second mixing chamber in the radial direction of the first mixing chamber in such a center to be discharged from the shaped discharge channels into the gas inlet member, The mixing chamber is perfused.

US 6,495,233 B1 describes a CVD-reactor having a showerhead and a mixing device for mixing process gases disposed on the showerhead. The process gases prepared in the plasma generator flow into turbulent chambers where turbulence occurs in the inlet channels running parallel to each other.

EP 1 452 626 B1 describes a gas mixing device for mixing two gases entering into a first mixing chamber through separate gas inlet channels. The first mixing chamber is separated from the diffusion chamber by a separation wall. The two process gases pre-mixed in the first mixing chamber, fed through the inlet channels, flow into the diffusion chamber through the openings of the separation walls, where further mixing of the process gases takes place.

US 6,068, 703 describes a gas mixing device for mixing a plurality of process gases introduced into a mixing chamber through radially extending gas inlet channels with respect to a center. The mixing chamber has residence chambers arranged in a ring around the center, and the process gases must be perfused in the form of grains in order to mix with each other. The entire gas flow exits the centrally located gas discharge opening and flows into the gas inlet member.

US 2011/0223334 A1 describes a CVD-reactor with a reactor cover on which gas sources and a mixing chamber are arranged. The mixing chamber is gas-fed by gas inlet channels that are centrally located and propagate radially toward the center. The mixing process of the individual gas flows takes place in the mixing chamber.

WO 97/35107 proposes gas deflecting members in the form of pipe sections. Baffle plates bent and cut-free project from the wall of the cylindrical pipe into the flow channel of the pipe.

It is a technical object of the present invention to provide a method or a gas supply device for supplying process gases to a gas inlet member.

This problem is solved by the invention as set forth in the claims.

The advantages of the individual features which are the subject of the claims are as follows: the device according to the invention is formed such that the effective path lengths of the individual gas flows from the gas sources to the gas inlet member have the same length. If the effective path lengths of the individual gas flows have the same length, mutually different gases have the same residence time in the gas supply device. If the inlet channels have different diameters, or if the cross sections of the mixing chambers are designed differently, the same residence time can be maintained by different pressure ratios. However, different diameters may be compensated with different line lengths. Symmetrical shapes in which the assigned cross sections of the inlet channels or the mixing chamber are designed identically are preferred. Accordingly, the effective path lengths represent, inter alia, the type of flow path through which the individual gas flows through the first mixing chamber within the same time. Structural differences in the case of individual flow channels can be compensated for by different pressure ratios. For symmetrically shaped inlet channels in which all inlet channels have the same cross-section and engage into the mixing chamber in the same structural environment, the effective path length extends from the opening of each inlet channel leading into the mixing chamber to the start of the gas outlet channel, It is the structural segment of the flow path of each individual gas flow. The laminar flow is preferably considered for each of the individual gas flows, so that the path length is substantially determined by the flow lines. The mixing process of the individual gas flows is effected by substantially lateral diffusion in the first mixing chamber and by repeated deflection of individual gas flows. The first gas biasing members disposed in the first mixing chamber may be arranged to have a characteristic that substantially extends the flow path. The arrangement of the first gas biasing members within the first mixing chamber is preferably symmetrical with respect to the forming arrangement of the gas inlet channels so that the individual gas flows flow at least along the corresponding flow path. The first gas biasing members may be arranged so that the individual gas flows spiral into the cylindrical first mixing chamber. In this case, the individual gas flows have a motion component arranged transversely to the plane of extension of the inlet plane. In this case, the individual gas flows have a motion component arranged transversely to the plane of extension of the inlet plane. However, the individual gas flows also have a motion component in the direction in which the extension plane is unfolded. A circular or turbulent motion is preferably formed in these directions. In this case, the individual gas streams flow through the first mixing chamber along thread lines from bottom to top along, for example, the imaginary axis of the mixing chamber. A second mixing chamber may be located within the first mixing chamber. The two mixing chambers may be formed by concentric pipes. Wherein the first mixing chamber forms a peripheral mixing chamber, and the second mixing chamber forms a center mixing chamber. The individual gas flows are merged into a premixed first gas flow within the first mixing chamber, and the first gas flow crosses an overflow barrier. The overflow barrier may be an end edge of the inner pipe forming the inner wall of the first mixing chamber and the outer wall of the second mixing chamber. The second mixing chamber is preferably provided with additional second gas deflection members and the gas flow into the second mixing chamber beyond the overflow barrier by the second gas deflection members is once It is deflected several times. The second gas biasing members may be formed and disposed to form a turbulent flow. The first gas deflecting members are preferably arranged and arranged to deflect the gas laminar flow once or several times while the second gas deflecting members are arranged in such a way as to form a turbulent flow. Whereby the second gas deflection members produce a second gas flow of turbulent flow consisting of the entire individual gas flow. The gas stream flowing through the second mixing chamber is discharged from the second mixing chamber through a gas discharge channel, wherein the discharge direction of the gas is preferably aligned transversely with respect to the gas supply direction. Whereby said gas discharge channel preferably has a direction of extension which is laterally aligned with respect to the plane of extension of said gas inlet plane. The walls of the two mixing chambers may be cylindrical and may be formed by concentric pipes. The imaginary axes of the pipes extend transversely with respect to the gas inlet plane. In the two pipes, gas flows aligned in opposite directions are formed. Sources of evaporation can be considered as gas sources. Such evaporation sources include solid or liquid starting materials that are provided in gaseous form as the heat of vaporization is applied. The vaporized starting material is transported to the first mixing chamber through one inlet channel, respectively, by means of a metered carrier gas. Preferably, the individual gas streams flow into the first mixing chamber from the supply channels at the same average flow rate. The flow rate of the individual gas flows may be set by mass flow controllers. However, the gas sources may be aerosol evaporators. Again, solid or liquid starting materials are provided in gaseous form as the heat of vaporization is applied. The mass flow of the vapor can be controlled on the one hand by the temperature of the evaporating surface, on the other hand by the carrier gas flow. According to the invention, the residence times of the individual gases within the gas mixing device, i.e. in the region between the gas source and the gas inlet member of the CVD-reactor, are substantially the same. The residence time should be different from each other by a maximum of 10 milliseconds. Preferably the residence time of the gases within the gas mixing device is not longer than 100 milliseconds. In alternative arrangements, however, the first mixing chamber may comprise flow obstructions which form turbulence. The second mixing chamber may also have flow obstructions. However, the second mixing chamber may comprise flow guide members for forming laminar flow.

Embodiments of the present invention will now be described with reference to the accompanying drawings.
1 is a schematic cross-sectional view of a CVD- or PVD-reactor with an assigned gas mixing device,
Fig. 2 is a cross-sectional view taken along the line II-II in Fig. 1,
3 is a sectional view of a second embodiment of the gas mixing apparatus,
4 is a plan view of the gas mixing device according to Fig. 3,
5 is a perspective view of a third embodiment in which the gas mixing device is formed by a U-shaped pipe,
Figure 6 is a side view of the mixing device shown in Figure 5,
7 is a plan view of the mixing apparatus shown in Fig. 5,
8 is a perspective view of a fourth embodiment of the mixing apparatus,
Fig. 9 is a plan view of the gas mixing apparatus shown in Fig. 8,
10 is a sectional view taken along the line X-X in Fig. 9,
11 is a sectional view taken along the line XI-XI in Fig. 9,
12 is a plan view of a fifth embodiment of the gas mixing apparatus,
13 is a side view of the gas mixing apparatus shown in Fig. 12,
Fig. 14 is a cross-sectional view taken along the line XIV-XIV in Fig. 13,
Fig. 15 is a sectional view taken along the line XV-XV in Fig. 13,
16 is a cross-sectional view taken along line XVI-XVI in FIG. 13, and
17 is a cross-sectional view taken along line XVII-XVII in Fig.

1 and 2 show a first embodiment of the present invention. The gas-tight reactor housing 1 which can be vacuumed in its own comprises an internal gas distribution volume 7 and a gas inlet member 5 with a gas outlet, wherein the gas outlet is oriented in the direction of the process chamber 2 And a plurality of gas discharge openings (6) arranged in the form of a showerhead directed toward the substrate (4), on which the substrate (4) to be coated lies. The substrate 4 is placed on a susceptor 3 that can be heated to a process temperature by a heating device or cooled to a process temperature by a cooling device. The susceptor 3 is surrounded by a ring-shaped gas exhaust member 9 connected to a vacuum pump 10 and the total pressure inside the process chamber 2 or the reactor housing 1 is controlled by the vacuum pump Can be set.

The process of supplying the process gas to the gas inlet member 5 is performed through a gas discharge channel 8 which is guided inward through the cover of the reactor housing 1.

The gas discharge channel 8 is connected to the base 20 of the housing of the gas mixing device which can be positioned directly above the upper wall of the reactor housing 1. The gas mixing device may be fixedly connected to the upper wall of the reactor housing 1. [ The upper wall may be a support for the gas mixing device.

The gas mixing device has a cylindrical housing, in which the base 20 and the cover 17 facing the base 20 each have a disc shape. The housing of the gas mixing device has a cylindrical outer wall (18) formed by a first pipe. The second pipe 19 is located inside and the lower end of the second pipe is fixedly connected to the base 20. The cavity of the inner pipe (19) is connected to the gas discharge channel (8). The upper edge of the inner pipe 19 freely protrudes into the cavity of the outer pipe 18 to form an overflowable edge.

Different process gases may be fed into the gas mixing device at different peripheral positions through the shaped inlet channels 22 adjacent to the base 20. In the case of the present embodiment, there are provided four inlet channels 22 arranged in a uniform angular distribution, each inlet channel being connected to one gas source 21. As the gas sources 21, an evaporator is considered, in which the solid or liquid starting materials are evaporated by heat supply. The vapor formed in this manner is fed into the gas mixing device through the inlet channel 22 by the carrier gas fed into the feed channel 23.

The gas mixing device has a first mixing chamber (12) restricted outward by the outer pipe (18) and confined inward by the inner pipe (19). In the first mixing chamber 12, a plurality of gas deflecting members 13, which are stacked on each other, are located. The gas deflecting members 13 are arranged to provide a substantially helical flow, preferably laminar flow, to the individual gas flows entering the first mixing chamber 12 from the supply channels 22 . The first gas-deflecting members 13 are arranged symmetrically with respect to the symmetrical arrangement of the inlet channels 22, so that they are discharged from the inlet channels 22, Each of the individual gas flows that pass through the inlet 12 has similar flow characteristics. In this case, spiral streamlines are considered, and the gases along the spiral streamlines travel upwards from the base 20 towards the cover 17, in particular by winding the inner pipe 19 several times. Where the gas flow integrated into all individual gas flows surpasses the overflow barrier 14 formed by the pipe ends. In this case, pre-mixed gas flow already in the first mixing chamber 12 is considered.

The pre-mixed gas flow is deflected by 180 degrees in the region of the overflow barrier 14 and is then deflected in the direction of the base 20 from the cover 17, 2 Mixture chamber 15 is perfused. In the second mixing chamber (15), second gas deflection members (16) are located and the second gas deflection members are formed and arranged to form a turbulent flow. For example, the second gas deflection members 16 may include gas dissociation edges, and turbulence may be formed behind the gas dissociation edges. The gas biasing members 16 may be flow obstructions. Whereby turbulence of the first gas flow in the second mixing chamber 15 is formed. A second gas flow of turbulent flow thus formed, including gases of the entire individual gas flow, is discharged from the base 20 of the second mixing chamber 15 through the gas discharge channel 8, 5) into the gas distribution volume (7). The carrier gas is directed to the gas sources 21 or the inlet channels 22 such that the measured flow rates through the cross-sections of the openings of the inlet channels 22 leading into the first mixing chamber 12 are the same. / RTI > So that gas having the same average flow rate from each inlet channel 22 flows into the mixing chamber 12.

In the case of the second embodiment shown in Figs. 3 and 4, a total of eight inlet channels 22 are arranged in the common gas inlet plane, and the inlet channels proceed in the direction of the center of the gas mixing apparatus by molding. The first mixing chamber 12 located radially outwardly has a gas deflecting member 13 and a first mixing chamber 12 extending spirally by the gas deflecting member. The end of the first mixing chamber 12 is formed by an overflow edge 14 and a cylindrical second internal mixing chamber 15 is connected to the overflow edge. In addition, the first mixing chamber 12 is provided with short-shaped obstacles 13 ', which can also have a gas-deflecting function and a gas turbulence-forming function. Similar members can also be placed in the second mixing chamber to affect gas flow.

Figures 3 and 4 show inlet channels 22 having different cross-sectional surface areas. Carrier gases carrying process gases or process gases are preferably directed through the inlet channels 22 having a larger cross-sectional surface area. Only diluent gases, i.e. carrier gases, are preferably guided through the inlet channels 22 'having a smaller cross-sectional surface area. The additional inlet channels 22 'for introducing small process gases can be used to form turbulence in the mixing chamber. The effective path lengths of carrier gas flows or diluent gas flows supplied through such additional inlet channels 22 'need to be adjusted to suit the effective path lengths of process gases supplied through the inlet channels 22 none.

In the case of the third embodiment shown in Figs. 5 to 7, the housing of the mixing device is U-shaped. In the first U-leg of the housing forming the pipe-shaped first mixing chamber 12, there are formed first inlet channels 22 disposed in a first plane and second inlet channels 22 arranged in a second plane < RTI ID = 0.0 > The second inlet channels 22 ' In this case as well, a total of eight gas inlet channels 22, 22 'connected to one gas source are engaged into the first mixing chamber 12, and the first mixing chamber is in the form of protrusions protruding from the inner wall of the pipe And first gas deflection members (13). In this case, semicircular ridges are considered, and the straight free edge of the semicircular ridges protrudes to the center of the pipe forming the first mixing chamber 12.

The U-legs of the U-shaped pipes 12, 15 form an overflow barrier 14. There, likewise, a semicircular gas deflecting member 24 projects into the free cross section of the U-shaped pipe, which has a free edge leading through the center of the pipe.

The pipe legs forming the second mixing chamber, parallel to the pipe legs forming the first mixing chamber 12, also have gas deflection members 16 therein. The free edge edges of the gas deflector plates (13) projecting transversely into the gas flow proceed substantially parallel to each other in the first mixing chamber, while the free edge edges of the gas deflector plates (13) Proceed to cross.

In the present embodiment, the gas deflecting members 13, 15 and 24 are formed by plates connected to the inner wall of the pipe in a plane over half of the circumference. The plates extend transversely with respect to the flow direction.

Figs. 8-11 show a fourth embodiment of a mixing device comprising eight supply channels 22 arranged in the supply plane of the cavity. Fig. The cylindrical housing extends transversely with respect to the feeding plane. The cylindrical housing has an outer cylinder (18) and an inner cylinder (19). The free edge of the inner cylinder 19 forms an overflow barrier 14. The gas inlet channels 22 engage in a limited first mixing chamber 12 outwardly by an outer pipe 18 in the axial direction of the base 20 and the first mixing chamber is only in the upper region I. E., The gas-deflecting members 13, adjacent to the overflow edge 14. Such gas deflecting members 13 deflect individual gas flows that pass through the first mixing chamber 12 in an axial direction into a helical flow path, , Where the individual gas flows are deflected by 180 degrees beyond the overflow barrier (14).

The second internal mixing chamber 15 has a plurality of gas deflecting members 16 arranged continuously in the flow direction. In this case, bent planar parts which cause a multistage gas deflection are considered. The planar parts are fixed to the inner wall of the inner pipe 19 and form a turbulent flow of gas flowing through the inner mixing chamber 15, (15) in the direction of the second mixing chamber (15). The gas deflecting members 16 are designed to be identical to each other. These may be top attachments that support each other, i. E., On top of each other. In this case, the gas deflecting members are formed so as to be supported on the inner wall of the pipe 19. [

Again, different inlet channels are provided. The carrier gases carrying process gases or process gases are guided through the inlet channels 22 with large diameters while only the carrier gas, i. E. Through the complementary inlet channels 22 with a small cross-section, Only the dilution gas is guided.

The fifth embodiment shown in Figs. 12-17 has a total of eight inlet channels 22 molded into the inlet plane. The inlet channels 22 are formed identically to each other and have an inner diameter that gradually increases in the flow direction. In addition, the inlet channels 22 are connected to the respective adjacent inlet channels 22 through the transverse channels 25.

Two pipes 18 and 19 coaxially arranged together form an outer first mixing chamber 12 and an inner second mixing chamber 15 in which the outer first mixing chamber 12 The gases to be mixed through the inlet channels 22 are supplied. The first mixing chamber 12 is provided with first gas deflection members 13 for deflecting the gas flow in the circumferential direction. The gas flow can be deflected several times in different circumferential directions by the deflecting members 13 so that the gas flow is directed to the first mixing chamber 12 in the first height section of the first mixing chamber 12, (12), for example, in a clockwise direction, and in the height section following the first height section, the first mixing chamber (12) is countercurrently perfused. In the clockwise or counterclockwise flow motion, the axial flow components of the cylinder pipe overlap and, as a result, premixed within the first mixing chamber 12, the individual gases discharged from the inlet channels 22 Flows reach the upper section of the first mixing chamber, where the individual gas flows flow into the central second mixing chamber 15 deflecting 180 degrees beyond the two overflow barriers 14 facing each other .

In the central second mixing chamber 15 are positioned second gas deflection members 16 formed of planar materials which may have a bent structure and the second gas deflection members are located in the second mixing chamber 15 ) ≪ / RTI >

In all of the previously described embodiments, the gas-deflecting members 13, 16 are arranged such that, even under consideration of the length of the inlet channels 22, each individual gas flow is directed from its own gas source 21 to the gas- And are designed and arranged to flow substantially the same effective path length.

The carrier gas flows into the supply channels 23 of the gas sources 21, respectively. In this case, the carrier gas flow is measured such that the gases have the same residence time within the mixing device, that is to say on their own path from the gas source 21 to the gas inflow member 5. The individual residence times do not differ by more than 10 milliseconds, where the total residence time is preferably at most 100 milliseconds. The gas flows flowing through the inlet channels 22 are preferably set so as to allow the gases to flow into the mixing chamber at the same average flow rate and to percolate the mixing chambers or the entire gas mixing device within the same time. The optimal situation is when the residence times differ by less than 10 milliseconds, for example only by a maximum of 2 milliseconds or by 5 milliseconds.

The gas mixing process can be performed at atmospheric pressure. Preferably, however, the gas mixing process takes place in a pressure range from 1 mbar to 500 mbar. The pressure difference between the gas source 21 and the gas inlet member 5 is less than 1 mbar, preferably less than 0.2 mbar. The diameter and height of the gas mixing device are in the range of 200 to 700 mm.

The foregoing embodiments are used to illustrate the inventions as generally described by the present application, which independently improve the prior art by at least the following combination of features:

The gas supply device is characterized in that the effective path lengths of the individual gas flows from the gas sources (21) to the gas inflow member (5) have the same length.

The gas supply system is characterized in that the inlet channels 22 are arranged in the inlet plane, in particular aligned towards the center of the cavity, and / or the gas outlet channel 8 extends transversely with respect to the inlet plane, And / or the gas flow is deflected through the overflow barrier (14) by 180 °.

The gas supply device is a premixing chamber in which the first mixing chamber 12 preferably has first gas deflection members 13 that cause a laminar direction change of each individual gas flow and / Characterized in that the mixing chamber (15) is a turbulent chamber with second gas deflection members (16) generating a second gas flow in turbulent flow in this second mixing chamber (15).

The gas supply device is characterized in that the first gas deflection members (13) or the second gas deflection members (16) are continuously arranged in a multistage manner in the flow direction.

The gas supply device is characterized in that the first mixing chamber (12) and the second mixing chamber (15) are formed by concentric pipes (18, 19) in which they are flowed in the opposite direction.

The gas supply device is characterized in that the diameter of the first mixing chamber 12 or the second mixing chamber 15 is smaller than the axial height of the first mixing chamber 12 or the second mixing chamber 15.

The gas supply apparatus is constituted such that a gas supply device composed of two mixing chambers 12 and 15 and gas sources 21 is disposed on the vertical upper part of the process chamber 2, particularly above the upper wall of the reactor housing 1 .

The method is characterized in that the effective residence times of the gases on the path between the gas source (21) and the gas inflow member (5) differ by at most 10 milliseconds.

The method is characterized in that the residence time of the gases on the path between the gas source (21) and the gas inflow member (5) is shorter than 100 milliseconds.

The method may be such that the first gas-deflecting members 13 disposed in the first mixing chamber 12 deflect the individual gas flows in a particularly laminar manner and / or the second gas Characterized in that the deflecting members (16) generate a particularly turbulent second gas flow.

The method is characterized in that the individual gas flows set up gas flows in the inlet channels (22) such that they exit the respective inlet channels (22) at the same average flow rate.

All the known features (both by themselves, but in combination with one another) are important to the invention. Accordingly, for the purpose of accommodating the features of the priority documents together with the claims of the present application, the disclosure content of the present application also includes the entire contents of the corresponding priority documents (copies of the preliminary application). In particular to carry out a partial application based on dependent claims, features of the dependent claims characterize independent and progressive improvements of the prior art.

1 reactor housing
2 process chamber
3 Susceptor
4 substrate
5 gas inflow member
6 gas discharge opening
7 Gas distribution volume
8 gas discharge channel
9 gas discharge member
10 Vacuum pump
11 Gas mixing device
12 first mixing chamber
13 First gas deflecting member
13 'Obstacle
14 Overflow Barrier
15 second mixing chamber
16 second gas deflection member
17 cover
18 cylinder outer wall
19 Pipe
20 base
21 gas source
22 Incoming channels
22 'inlet channel
23 Supply Channel
24 gas deflecting member
25 transverse channel

Claims (15)

A gas supply device having inlet channels (22), an overflow barrier (14) and a gas outlet channel (8)
Said inlet channels being molded in the periphery of the center and connected to a respective gas source (21), each of the individual gas flows being provided by a respective gas source (21) Is provided for feeding into the mixing chamber (12), in which the individual gas flows in the first mixing chamber (12), in particular by one or more first gas deflection members (13), are deflected once or several times And the individual gas flows are mixed together and a first gas flow consisting of all individual gas flows discharged from the first mixing chamber (12) is deflected by 180 degrees over the overflow barrier, Flows into a second mixing chamber (15) disposed within the chamber (12), and in the second mixing chamber, particularly by means of second gas deflection members (16) Is deviated several times and the gas discharge channel is centrally located and the gas flow is discharged from the second mixing chamber (15) into the gas inlet member (5) of the CVD or PVD coating apparatus (1) In the gas supply apparatus provided for this,
Characterized in that the gas supply device consisting of the two mixing chambers (12, 15) and the gas sources (21) is arranged vertically above the process chamber (2). The method according to claim 1,
Characterized in that the effective path lengths of the individual gas flows from the gas sources (21) to the gas inlet member (5) are of equal length to each other. 3. The method according to claim 1 or 2,
Characterized in that the inlet channels (22) are arranged in the inlet plane, in particular towards the center of the cavity, the gas outlet channel (8) extending transversely to the inlet plane Supply device. 4. The method according to any one of claims 1 to 3,
The first mixing chamber 12 is preferably a premixing chamber with first gas deflection members 13 causing a laminar flow direction change of each individual gas flow, Characterized in that the second mixing chamber (15) is a turbulent chamber with second gas deflection members (16) generating a second turbulent gas flow in the second mixing chamber (15). 5. The method according to any one of claims 1 to 4,
Characterized in that the first gas-deflecting members (13) or the second gas-deflecting members (16) are continuously arranged in a multistage manner in the flow direction. 6. The method according to any one of claims 1 to 5,
Characterized in that the first mixing chamber (12) and the second mixing chamber (15) are formed by concentric pipes (18, 19) which are flowed in opposite directions. 7. The method according to any one of claims 1 to 6,
Characterized in that the diameter of the first mixing chamber (12) or the second mixing chamber (15) is smaller than the axial height of the first mixing chamber (12) or the second mixing chamber (15). 8. The method according to any one of claims 1 to 7,
Characterized in that the gas sources (21) and the mixing chambers (12, 15) are arranged directly above the upper wall of the reactor housing (1). 9. The method according to any one of claims 1 to 8,
Characterized in that it has additional gas inlet channels (22 ') for introducing a dilution gas flow. A method for supplying process gases to a gas inlet member (9) of a CVD- or PVD-coating apparatus,
- providing a plurality of process gases in each one gas source (21);
- separating each process gas from the other individual gas flows as a separate gas flow and transferring the individual process gases from the individual gas sources 21 into the first mixing chamber 12 via one inlet channel 22;
- deflecting the individual gas flows by means of first gas deflection members (13) in the first mixing chamber (12) and mixing the individual gas flows together;
Directing a first gas flow of all individual gases through an overflow barrier into a second mixing chamber;
- deflecting said gas flow, in particular by means of second gas deflection members (16);
- a method for supplying process gases to a gas inlet member of a CVD- or PVD-coating apparatus, comprising the step of discharging a gas flow of all individual gas flows from a gas outlet channel (8) into a gas inlet member In this case,
Characterized in that the effective residence times of the gases on the path between the gas source (21) and the gas inlet member (5) are differed by a maximum of 10 milliseconds, the gas inlet member of the CVD- or PVD- / RTI > 11. The method of claim 10,
A method for supplying process gases to a gas inlet member of a CVD- or PVD-coating apparatus, characterized in that the residence time of the gases on the path between the gas source (21) and the gas inlet member (5) is shorter than 100 milliseconds . The method according to claim 10 or 11,
The first gas-deflecting members 13 disposed in the first mixing chamber 12 deflect the individual gas flows, in particular laminar flow, and / or the second gas deflection member 15 disposed in the second mixing chamber 15, A method for supplying process gases to a gas inlet member of a CVD- or PVD-coating apparatus, characterized in that the members (16) generate a second gas flow, in particular turbulent flow. 13. The method according to any one of claims 10 to 12,
Characterized in that the gas flows in the inlet channels (22) are set such that the individual gas flows deviate from the respective inlet channels (22) at the same average flow rate. A method for supplying gases. 14. The method according to any one of claims 10 to 13,
Characterized in that it supplies a diluent gas flow by means of additional inlet channels (22 ').≪ Desc / Clms Page number 13 > 15. An apparatus or method characterized by having one or more of the features of any one of claims 1 to 14.

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