CN113718332A - Semiconductor device with a plurality of semiconductor chips - Google Patents
Semiconductor device with a plurality of semiconductor chips Download PDFInfo
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- CN113718332A CN113718332A CN202111004313.0A CN202111004313A CN113718332A CN 113718332 A CN113718332 A CN 113718332A CN 202111004313 A CN202111004313 A CN 202111004313A CN 113718332 A CN113718332 A CN 113718332A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 46
- 238000000034 method Methods 0.000 claims abstract description 106
- 230000008569 process Effects 0.000 claims abstract description 106
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 11
- 238000007789 sealing Methods 0.000 claims description 6
- 239000007789 gas Substances 0.000 description 88
- 230000009471 action Effects 0.000 description 12
- 238000005530 etching Methods 0.000 description 12
- 238000005516 engineering process Methods 0.000 description 6
- 210000001503 joint Anatomy 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
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- 230000005484 gravity Effects 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 238000012423 maintenance Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
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- 239000012495 reaction gas Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011946 reduction process Methods 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/08—Reaction chambers; Selection of materials therefor
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
- C30B25/186—Epitaxial-layer growth characterised by the substrate being specially pre-treated by, e.g. chemical or physical means
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
- C30B25/20—Epitaxial-layer growth characterised by the substrate the substrate being of the same materials as the epitaxial layer
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
Abstract
The invention provides semiconductor equipment which comprises a process chamber and a reaction base, wherein the side wall of the process chamber is provided with an air inlet block for inputting air into the process chamber; the process chamber is also internally provided with a flow guide assembly arranged around the reaction base and used for guiding and distributing gas input by the gas inlet block into the process chamber, the bottom of the flow guide assembly is provided with a first conical part, the outer diameter of the first conical part is gradually reduced from top to bottom, the process chamber is provided with a first conical positioning surface which is matched with the first conical part and the inner diameter of which is gradually reduced from top to bottom, and the first conical part is correspondingly arranged on the first conical positioning surface. In the invention, the bottom of the flow guide assembly is provided with the first conical part, and the process chamber is provided with the first conical positioning surface with the corresponding shape, so that the flow guide assembly and the process chamber are concentric through the conical surface lifting relation, and the consistency of repeated assembly of the flow guide assembly and the uniformity of a semiconductor process are improved.
Description
Technical Field
The invention relates to the field of semiconductor process equipment, in particular to semiconductor equipment.
Background
The working principle of the epitaxial equipment is that the chemical vapor deposition principle is adopted, reaction gas is conveyed to a reaction cavity and reacts in a heating way and the like, growing atoms are deposited on a wafer,
a single crystal layer is grown as shown in fig. 1. The decompression epitaxial equipment integrates a plurality of modules such as a wafer transmission system, a Load Lock, a transmission chamber, a process chamber and the like, and covers a plurality of integrated circuit manufacturing equipment key technologies such as an infrared heating control technology, a uniform airflow field control technology, a wafer scheduling and transmission precision control technology, a high-temperature epitaxial deposition technology, a pressure control technology and the like.
In order to improve the stability of a gas flow field in the process chamber, a gas flow guide structure is arranged in the process chamber, process gas uniformly enters the chamber under the guidance of a channel in the gas flow guide structure and participates in reaction, however, the existing process chamber often has the problems of gas flow disorder and process stability reduction after being used for a period of time. How to provide an epitaxial device with higher process stability becomes a technical problem to be solved urgently in the field.
Disclosure of Invention
The present invention is directed to providing a semiconductor apparatus capable of improving stability of an epitaxial process.
In order to achieve the above object, the present invention provides a semiconductor device, including a process chamber and a reaction susceptor disposed in the process chamber, wherein the reaction susceptor has a carrying surface for carrying a wafer, and a gas inlet block is disposed on a sidewall of the process chamber for inputting gas into the process chamber; still be provided with the water conservancy diversion subassembly in the process cavity, the water conservancy diversion subassembly encircles the reaction base sets up, be used for with the gaseous water conservancy diversion of admitting air piece input distributes to in the process cavity, the bottom of water conservancy diversion subassembly has first toper portion, the external diameter of first toper portion reduces from top to bottom gradually, the process cavity have with first toper portion cooperation sets up and the internal diameter from top to bottom reduces gradually first toper locating surface, first toper portion corresponds the setting on the first toper locating surface.
Optionally, a first air inlet channel and a second air inlet channel are formed in the air inlet block, the flow guide assembly is provided with a first air guide channel and a second air guide channel, the first air inlet channel is correspondingly communicated with the first air guide channel, the second air inlet channel is correspondingly communicated with the second air guide channel, an air outlet of the first air guide channel is not lower than the reaction base, and an air outlet of the second air guide channel is lower than the reaction base.
Optionally, the flow guiding assembly includes an upper flow guiding ring and a lower flow guiding ring which are coaxial, the upper flow guiding ring is arranged above the lower flow guiding ring in a stacked manner, wherein the second air guide channel is formed in the lower guide ring and penetrates through the side wall of the lower guide ring along the thickness direction, the top surface of the lower guide ring is not lower than the bearing surface, and the side surface of the lower guide ring is provided with a plurality of first guide grooves extending to the top surface of the lower guide ring, a plurality of second guide grooves extending along the radial direction of the upper guide ring are formed in the bottom surface of the upper guide ring, the bottom ends of the plurality of first guide grooves form air inlets of the plurality of first air inlet channels, the top ends of the plurality of first guide grooves are communicated with the plurality of second guide grooves in a one-to-one correspondence manner, and openings of the plurality of second guide grooves in the inner wall of the upper guide ring form air outlets of the plurality of first air inlet channels.
Optionally, the top of going up the water conservancy diversion ring has second toper portion, the external diameter of second toper portion is crescent from top to bottom, the top of process chamber has the second toper locating surface of internal diameter crescent from top to bottom, go up the second toper portion of water conservancy diversion ring with the laminating of second toper locating surface.
Optionally, the process chamber includes a support ring, an upper outer wall and a lower outer wall, the upper outer wall seals a top end of the support ring, the lower outer wall seals a bottom end of the support ring, the air inlet block is disposed on the support ring, and the first tapered locating surface is formed on the lower outer wall.
Optionally, the top of the upper outer wall is formed into a curved surface, and the height of the top of the upper outer wall gradually decreases from the central region to the edge region.
Optionally, the semiconductor device further includes a plurality of flow guiding rings, one end of each of the plurality of flow guiding rings is disposed in the plurality of second air guiding channels in a one-to-one correspondence manner, the other end of each of the plurality of flow guiding rings is disposed in the corresponding second air inlet channel, and the outer profile of the cross section of each of the flow guiding rings corresponds to the cross sectional shapes of the corresponding second air guiding channel and the corresponding second air inlet channel.
Optionally, the second air inlet channel includes a flow guide section and a fitting section, the fitting section is located on one side facing the second air guide channel, the shape and size of the cross section of the fitting section correspond to the outer wall of the flow guide ring, and the cross sectional area of the flow guide section is smaller than that of the fitting section.
Optionally, the outer contour of the cross section of the drainage ring is a rectangle, the projection shape of the drainage ring on the horizontal plane is a parallelogram, and the sides of the parallelogram corresponding to the two ends of the drainage ring are provided with parallel lines tangent to the side wall of the lower drainage ring corresponding to the drainage ring.
Optionally, the first air inlet channel and the second air inlet channel are the same in height, two air inlet blocks are arranged on the side wall of the process chamber, two first air inlet channels and a second air inlet channel located between the two first air inlet channels are formed in each air inlet block, and the two air inlet blocks are arranged side by side and the two adjacent first air inlet channels are communicated with the same first air guide channel.
In the semiconductor device provided by the invention, the bottom of the flow guide assembly is provided with a first conical part, the process chamber is provided with a first conical positioning surface corresponding to the first conical part in shape, thereby, the force for supporting the flow guide assembly at each position on the first conical positioning surface of the process chamber has component force pointing to the axial direction of the process chamber along the horizontal direction through the conical surface lifting relation between the first conical part and the first conical positioning surface, even if the diversion assembly is under the action of tail gas suction, the diversion assembly can be pressed down on the first conical positioning surface under the action of self gravity, and the axial position of the first conical positioning surface is ensured to be unchanged under the action of the component force of the supporting force provided by the first conical positioning surface pointing to the axial line of the process chamber along the horizontal direction, and the concentricity of the flow guide assembly and the process chamber is further ensured, and the consistency of repeated assembly of the flow guide assembly and the uniformity of a semiconductor process are improved.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention and not to limit the invention. In the drawings:
FIG. 1 is a schematic diagram of an epitaxial process;
FIG. 2 is a schematic diagram of an epitaxy apparatus in the prior art;
fig. 3 is a top view of a lower deflector ring of the semiconductor device of fig. 2;
fig. 4 is a left side view of the lower deflector ring of fig. 3;
FIG. 5 is a schematic view of the flow path of process gases in the semiconductor apparatus of FIG. 2;
fig. 6 is a schematic structural diagram of a semiconductor device according to an embodiment of the present invention;
FIG. 7 is an enlarged partial schematic view of the semiconductor device of FIG. 6;
FIG. 8 is a schematic view showing a connection relationship between an air inlet block and a flow guide ring in a semiconductor device according to an embodiment of the present invention;
fig. 9 is a schematic view of a connection relationship between an air inlet block and a lower baffle ring of a semiconductor device according to an embodiment of the present invention;
fig. 10 is a schematic view of another connection relationship between the inlet block and the lower baffle ring of the semiconductor device according to the embodiment of the present invention;
fig. 11 is a schematic bottom view of an upper deflector ring in a semiconductor device according to an embodiment of the present invention;
fig. 12 is a schematic top view of an upper deflector ring in a semiconductor device according to an embodiment of the present invention;
fig. 13 is a three-dimensional view of a lower deflector ring in a semiconductor device according to an embodiment of the present invention;
fig. 14 is a schematic structural view of an air inlet block in the semiconductor device according to the embodiment of the present invention.
Detailed Description
The following detailed description of embodiments of the invention refers to the accompanying drawings. It should be understood that the detailed description and specific examples, while indicating the present invention, are given by way of illustration and explanation only, not limitation.
Fig. 2 is a schematic diagram of a chamber system structure of a semiconductor device in the prior art, which is designed with upper and lower dual gas inlet paths so that process gases and etching gases (which may include gases such as hydrogen chloride) flow into the process chamber from above and below the wafer carrying surface, respectively, in order to prevent an epitaxial layer generated by the reaction of the process gases (mainly including hydrogen gas, silicon source gas, and other dopant gas sources) from depositing on other components in the chamber during the epitaxial process of the wafer.
Specifically, as shown in fig. 2 to 5, the chamber system structure is composed of a chamber support ring 60, a lower guide ring 30, a chamber lower outer wall 80, a reaction base 10, a chamber upper outer wall 70, and an upper guide ring 40. The upper outer wall 70 and the lower outer wall 80 of the cavity are respectively fixed on the upper surface and the lower surface of the cavity support ring 60 in a bolt connection mode, the lower guide ring 30 is placed above the lower outer wall 80 of the cavity, the reaction base 10 is placed above the lower guide ring 30, the upper guide ring 40 is placed outside the lower guide ring 30, and the three have certain degrees of freedom and can move in a certain space.
The lower guide ring 30 has a two-layer structure, the gas is divided into two channels of process gas and etching gas by a gas inlet block (liner), and the gas switches of the two channels are not affected by each other. The process gas enters the reaction chamber, collides with the vertical surface of the upper guide groove 31 of the lower guide ring, changes direction, collides with the upper guide ring 40 after passing through a vertical gap formed by the upper guide ring 40 and the upper guide groove 31 of the lower guide ring 30, changes direction, and horizontally flows out to a processor outside the chamber through the upper surface of the reaction base; the etching gas directly flows into the lower portion of the reaction susceptor 10 from the lower guide grooves 32 of the lower guide ring. In an epitaxial process, process gases are flowed over the wafer and deposited to form an epitaxial layer, and an etching gas may etch the epitaxial layer deposited on the various components in the process chamber, leaving only the desired epitaxial layer on the wafer surface. However, in the conventional semiconductor device, the lower deflector ring 30 is not positioned sufficiently in the horizontal direction, and a gap exists between the cylindrical outer wall of the deflector ring 30 and the chamber support ring 60, so that the lower deflector ring always moves towards the tail gas end under the suction action of the tail gas end of the pressure reduction process, so that the position of the lower deflector ring 30 is deviated, and the stability of the epitaxial process is poor.
In order to solve the above technical problems, as an aspect of the present invention, there is provided a semiconductor apparatus, as shown in fig. 6 and 7, the semiconductor apparatus including a process chamber and a reaction susceptor 100 disposed in the process chamber for carrying a wafer, wherein a gas inlet block 200 is disposed on a sidewall of the process chamber for inputting gas into the process chamber. The process chamber is further provided with a flow guide assembly, which is disposed around the reaction base 100 and is used for guiding and distributing the gas input from the gas inlet block 200 into the process chamber. The bottom of water conservancy diversion subassembly has first toper portion, and the external diameter of first toper portion reduces from top to bottom gradually, and the process chamber has and sets up and the internal diameter first toper locating surface that reduces from top to bottom gradually with first toper portion cooperation, and first toper portion corresponds and sets up on first toper locating surface.
In the semiconductor device provided by the invention, the bottom of the flow guide assembly is provided with a first conical part, the process chamber is provided with a first conical positioning surface corresponding to the first conical part in shape, thereby, the conical surface lifting relation between the first conical part and the first conical positioning surface ensures that the force for supporting the flow guide assembly at each position on the first conical positioning surface of the process chamber has component force pointing to the axis of the process chamber (namely the axis of the first conical part and the first conical positioning surface) along the horizontal direction, even if the diversion assembly is under the action of tail gas suction, the diversion assembly can be pressed down on the first conical positioning surface under the action of self gravity, and the axial position of the first conical positioning surface is ensured to be unchanged under the action of the component force of the supporting force provided by the first conical positioning surface pointing to the axial line of the process chamber along the horizontal direction, and the concentricity of the flow guide assembly and the process chamber is further ensured, and the consistency of repeated assembly of the flow guide assembly and the uniformity of a semiconductor process are improved.
In order to prevent an epitaxial layer generated by a reaction of a process gas in a wafer epitaxial process from being deposited on other components in a chamber, as a preferred embodiment of the present invention, the gas inlet block 200 is configured to provide the process gas and an etching gas, the flow guide assembly is configured to respectively guide the process gas and the etching gas, distribute the process gas above the reaction base 100, enable the process gas to react above a wafer and to be deposited to generate the epitaxial layer, distribute the etching gas below the reaction base 100, and etch the epitaxial layer deposited on the component below the reaction base 100 through the etching gas.
Specifically, as shown in fig. 6 to 11, a first air inlet channel 210 and a second air inlet channel 220 are formed in the air inlet block 200, the flow guide assembly has a first air guide channel (including a first flow guide groove 310 and a second flow guide groove 410) and a second air guide channel 320, the first air inlet channel 210 is correspondingly communicated with the first air guide channel, and the second air inlet channel 220 is correspondingly communicated with the second air guide channel 320. Wherein, the air outlet of the first air guide channel is not lower than the reaction base 100, and the air outlet of the second air guide channel 320 is lower than the reaction base 100.
In the present embodiment, the shape and size of the taper of the first taper positioning surface and the first taper portion are not particularly limited, and for example, as a preferable embodiment of the present invention, as shown in fig. 7, an angle α between a generatrix of the first taper positioning surface and a horizontal plane is 10 ° to 15 ° and a size β of the first taper positioning surface in the vertical direction is 5mm to 10mm, for convenience of processing and mounting.
In order to facilitate cleaning of the air guide channels (the first air guide channel and the second air guide channel 320) and improve maintenance performance of the deflector assembly, as shown in fig. 6 and 9 to 13, as a preferred embodiment of the present invention, the deflector assembly includes an upper deflector ring 400 and a lower deflector ring 300 which are coaxial, and the upper deflector ring 400 is stacked above the lower deflector ring 300.
The second air guide channel 320 is formed in the lower guide ring 300 and penetrates through the sidewall of the lower guide ring 300 along the thickness direction, the top surface of the lower guide ring 300 is not lower than the carrying surface of the reaction substrate 100, and a plurality of first guide grooves 310 extending to the top surface of the lower guide ring 300 are formed on the side surface of the lower guide ring 300. A plurality of second guide grooves 410 extending in the radial direction of the upper guide ring 400 are formed on the bottom surface of the upper guide ring 400, the bottom ends of the plurality of first guide grooves 310 form air inlets of a plurality of first air inlet passages, the top ends of the plurality of first guide grooves 310 are communicated with the plurality of second guide grooves 410 in a one-to-one correspondence manner, and openings of the plurality of second guide grooves 410 on the inner wall of the upper guide ring 400 form air outlets of the plurality of first air inlet passages.
In the embodiment of the present invention, the second gas guide channel 320 and the first and second gas inlet channels 210 and 220 of the gas inlet block 200 are located below the reaction substrate 100, and the etching gas output from the second gas inlet channel 220 is distributed below the reaction substrate 100 through the horizontally extending second gas guide channel 320. The first air inlet channel has an air inlet lower than the reaction base 100 and an air outlet higher than the reaction base 100, and thus needs to be formed as a curved channel, and in the embodiment of the present invention, the guide assembly is a split design, and the first air inlet channel is formed by connecting a first guide groove 310 formed on the lower guide ring 300 and extending in the vertical direction and a second guide groove 410 formed on the upper guide ring 400 and extending in the horizontal direction, so that when impurities and particles needing to be cleaned exist in the first air inlet channel, the curved first air inlet channel can be conveniently cleaned only by separating the lower guide ring 300 from the upper guide ring 400, thereby improving the maintenance performance of the guide assembly.
In order to improve the alignment accuracy between the upper deflector ring 400 and the process chamber, as a preferred embodiment of the present invention, the upper deflector ring 400 may also contact the top of the process chamber through a tapered mating surface, specifically, as shown in fig. 6, the top of the upper deflector ring 400 has a second tapered portion, the outer diameter of the second tapered portion is gradually increased from top to bottom, the top of the process chamber has a second tapered locating surface, the inner diameter of which is gradually increased from top to bottom, and the second tapered portion of the upper deflector ring 400 is attached to the second tapered locating surface.
In order to improve the uniformity of the process gas supplied above the reaction susceptor 100 by the guide assembly, as shown in fig. 11, the width of the second guide grooves 410 is gradually increased in a direction close to the axis of the upper guide ring 400.
As a preferred embodiment of the present invention, as shown in fig. 6, 11, and 12, a plurality of first protruding rims 420 are further formed on the bottom surface of the upper baffle ring 400, the positions of the plurality of first protruding rims 420 (along the upper baffle ring 400) correspond to one end of the plurality of second baffle grooves 410 away from the axis of the upper baffle ring 400, one surface of the first protruding rim 420 away from the axis of the upper baffle ring 400 is aligned with the outer wall of the upper baffle ring 400, and the size of the first protruding rim 420 along the circumferential direction of the upper baffle ring 400 corresponds to the width of the first baffle groove 310 (the length of the first protruding rim 420 beyond the bottom surface of the upper baffle ring 400 is slightly shorter than the length of the first baffle groove 310, so as to leave the air inlet of the first air inlet channel).
In the embodiment of the present invention, the bottom surface of the upper baffle ring 400 is further formed with a first convex edge 420, and the first convex edge 420 is disposed opposite to the first baffle groove 310 extending in the vertical direction, so as to seal the first baffle groove 310, and the process gas enters the first baffle groove 310 from the gas inlet end (bottom end) of the first baffle groove 310 and then only can vertically rise in the space between the first convex edge 420 and the first baffle groove 310, thereby improving the stability of the process gas flowing in the first gas inlet channel.
In order to improve the stability of the tail gas flowing to the tail gas end, as a preferred embodiment of the present invention, the upper deflector ring 400 and the lower deflector ring 300 may also form a curved exhaust channel on the side of the tail gas end by the convex edge cooperating with the deflector groove. Specifically, as shown in fig. 11 to 13, the upper baffle ring 400 is further formed with a third baffle groove 430 and a second flange 440 on a bottom surface of a side opposite to the first flanges 420, and a fourth baffle groove is further formed on a sidewall of the lower baffle ring 300 opposite to the first baffles 310 (the length of the second flange 440 exceeding the bottom surface of the upper baffle ring 400 is slightly shorter than the length of the fourth baffle groove, so as to leave an exhaust port). The exhaust gas enters the third guiding gutter 430, then flows downward into the space between the second flange 440 and the fourth guiding gutter, and finally flows into the exhaust channel in the support ring 600 through the exhaust port and is discharged to the exhaust end.
As an alternative embodiment of the present invention, as shown in fig. 13, a wafer transfer port 330 is further formed on the sidewall of the lower guide ring 300 and penetrates through the sidewall of the lower guide ring 300 along the thickness direction, for allowing a carrier such as a robot to transfer a wafer into or out of the process chamber.
The structural composition of the process chamber according to the embodiment of the present invention is not particularly limited, for example, as an alternative embodiment of the present invention, as shown in fig. 6, the process chamber includes a support ring 600, an upper outer wall 700 and a lower outer wall 800, the upper outer wall 700 seals a top end of the support ring 600, the lower outer wall 800 seals a bottom end of the support ring 600, the air inlet block 200 is disposed on the support ring 600, and the first tapered locating surface is formed on the lower outer wall 800.
During the use of the semiconductor device, the pumping action of the exhaust end will form a negative pressure inside the process chamber, and the pressure of the gas above the upper outer wall 700 (i.e., atmospheric pressure) is greater than the ambient pressure of the chamber below the upper outer wall 700, so that the upper outer wall 700 will be subjected to a downward pressure due to the difference between the upper and lower pressures. In the prior art, the upper outer wall is usually a horizontal circular top cover structure and is easy to recess downwards under the action of pressure, so that the uniformity of a gas flow field in the process chamber is influenced.
In order to solve the above-mentioned technical problems and improve the structural stability and the service life of the process chamber, as a preferred embodiment of the present invention, as shown in fig. 6, the top of the upper outer wall 700 is formed into a curved surface, and the height of the top of the upper outer wall 700 gradually decreases from the central region to the edge region.
In the embodiment of the present invention, the top of the upper outer wall 700 is designed to have an arch shape, so that the structural strength of the upper outer wall 700 can be increased, the pressure caused by the pressure difference between the upper environment and the lower environment can be better resisted, the stability of the shape of the process chamber can be maintained, and the stability of the epitaxial process can be further improved.
The inventors of the present invention have also found in their studies that another important reason for the poor stability of the epitaxial process in the conventional semiconductor apparatus is that there is a risk of conduction and mixing between the process gas in the first gas inlet channel 210 and the etching gas in the second gas inlet channel 220 through the gap between the outer sidewall of the lower deflector ring 300 and the sidewall of the flow guide groove.
In order to solve the above technical problem and further improve the stability of the epitaxial process, as shown in fig. 6 and 8 to 10, as a preferred embodiment of the present invention, the semiconductor device further includes a plurality of flow guide rings 500, one end of each of the plurality of flow guide rings 500 is disposed in the plurality of second gas guide channels 320 in a one-to-one correspondence manner, the other end of each of the plurality of flow guide rings 500 is disposed in the corresponding second gas inlet channel 220, and the outer profile of the cross section of each of the flow guide rings 500 corresponds to the cross sectional shapes of the corresponding second gas guide channel 320 and the corresponding second gas inlet channel 220.
As shown in fig. 10, the two arrow paths are the gas flow path for the process gas flowing from the first gas inlet channel 210 into the first flow guiding groove 310 and flowing to the upper side of the reaction chamber 100, and the gas flow path for the etching gas flowing from the second gas inlet channel 220 into the second gas guiding channel 320 and flowing to the lower side of the reaction chamber 100.
In the embodiment of the present invention, the flow guiding ring 500 is disposed at the butt joint position of the second gas guiding channel 320 and the second gas inlet channel 220, and two ends of the flow guiding ring 500 are respectively inserted into the corresponding second gas guiding channel 320 and the second gas inlet channel 220, so as to hermetically connect the second gas guiding channel 320 and the second gas inlet channel 220, thereby preventing the etching gas flowing into the second gas guiding channel 320 from the second gas inlet channel 220 from escaping at the butt joint position and mixing with the process gas to be flowed to the upper side of the reaction base 100 for the epitaxial process, improving the purity of the process gas in the epitaxial process, and further improving the stability of the epitaxial process.
To improve the sealing effect of the flow guiding ring 500 on the second air guiding channel 320 and the second air inlet channel 220, an interference fit is preferably adopted between the flow guiding ring 500 and the second air guiding channel 320 and the second air inlet channel 220.
In order to improve the installation efficiency of the flow guiding ring 500 and improve the position accuracy of the flow guiding ring 500, so as to ensure that the flow guiding ring 500 is stably sealed against the butt joint position of the second air guiding channel 320 and the second air inlet channel 220, as shown in fig. 8 to 10, as a preferred embodiment of the present invention, the second air inlet channel 220 includes a flow guiding section 221 and a matching section 222, the matching section 222 is located on the side facing the second air guiding channel 320, the shape and the size of the cross section of the matching section 222 correspond to the outer wall of the flow guiding ring 500, and the cross section area of the flow guiding section 221 is smaller than the cross section area of the matching section 222.
In the embodiment of the present invention, the second air inlet channel 220 is provided with a diameter-variable structure, and when the flow guide ring 500 is installed, after the second air guide channel 320 and the second air inlet channel 220 are horizontally aligned, the flow guide ring 500 is inserted into the second air guide channel 320 from the inner hole of the lower flow guide ring 300, so that the flow guide ring 500 passes through the flow guide ring 500 and enters the second air inlet channel 220 until the flow guide ring 500 abuts against the step where the flow guide section 221 and the matching section 222 are joined, thereby improving the installation efficiency of the flow guide ring 500 by the step, improving the position accuracy of the flow guide ring 500, and further ensuring the stability of the flow guide ring 500 in sealing the joint position of the second air guide channel 320 and the second air inlet channel 220.
The shape of the flow guiding ring 500 is not limited in the embodiments of the present invention, for example, as an alternative embodiment of the present invention, as shown in fig. 8 to 10, the cross-sectional outer contour of the flow guiding ring 500 may be rectangular. Alternatively, as shown in fig. 14, the length of the vertical side (i.e., the side extending in the height direction) of the cross-sectional rectangle of the guide section 221 is smaller than that of the vertical side of the cross-sectional rectangle of the fitting section 222.
In order to further improve the stability of the flow guide ring 500 in sealing the joint position of the second gas guide channel 320 and the second gas inlet channel 220, as a preferred embodiment of the present invention, as shown in fig. 8 to 10, the projection shape of the flow guide ring 500 on the horizontal plane is a parallelogram, and the sides of the parallelogram corresponding to the two ends of the flow guide ring 500 have parallel lines tangent to the side walls of the lower flow guide ring 300 corresponding to the position of the flow guide ring 500.
In the embodiment of the present invention, the projection shape of the flow guiding ring 500 in the top view angle is a parallelogram, that is, both ends of the flow guiding ring 500 along the radial direction of the lower flow guiding ring 300 are set as oblique sides, and the oblique direction of the oblique sides corresponds to the tangent of the sidewall of the position of the lower flow guiding ring 300 corresponding to the flow guiding ring 500, so as to ensure that the flow guiding ring 500 has a sufficiently long extension portion on both sides of any butt joint position of the second air guiding channel 320 and the second air inlet channel 220, thereby further improving the stability of the flow guiding ring 500 in sealing the butt joint position of the second air guiding channel 320 and the second air inlet channel 220.
In the embodiment of the present invention, the number and the distribution of the first air inlet channel 210 and the second air inlet channel 220 in the air inlet block 200 are not particularly limited, for example, in order to reduce the thickness of the air inlet block 200 and improve the space utilization rate of the process chamber, as a preferred embodiment of the present invention, as shown in fig. 8, the heights of the first air inlet channel 210 and the second air inlet channel 220 are the same.
As an alternative embodiment of the present invention, as shown in fig. 8 and 14, two air inlet blocks 200 are disposed on the sidewall of the process chamber, each air inlet block 200 has two first air inlet channels 210 and a second air inlet channel 220 formed therein, and the two air inlet blocks 200 are disposed side by side and the two adjacent first air inlet channels 210 are communicated with the same first air guide channel.
In the semiconductor device provided by the invention, the bottom of the flow guide assembly is provided with a first conical part, the process chamber is provided with a first conical positioning surface corresponding to the first conical part in shape, thereby, the force for supporting the flow guide assembly at each position on the first conical positioning surface of the process chamber has component force pointing to the axial direction of the process chamber along the horizontal direction through the conical surface lifting relation between the first conical part and the first conical positioning surface, even if the diversion assembly is under the action of tail gas suction, the diversion assembly can be pressed down on the first conical positioning surface under the action of self gravity, and the axial position of the first conical positioning surface is ensured to be unchanged under the action of the component force of the supporting force provided by the first conical positioning surface pointing to the axial line of the process chamber along the horizontal direction, and the concentricity of the flow guide assembly and the process chamber is further ensured, and the consistency of repeated assembly of the flow guide assembly and the uniformity of a semiconductor process are improved.
It will be understood that the above embodiments are merely exemplary embodiments taken to illustrate the principles of the present invention, which is not limited thereto. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit and substance of the invention, and these modifications and improvements are also considered to be within the scope of the invention.
Claims (10)
1. The semiconductor equipment is characterized by comprising a process chamber and a reaction base arranged in the process chamber, wherein the reaction base is provided with a bearing surface for bearing a wafer, and the side wall of the process chamber is provided with an air inlet block for inputting air into the process chamber; still be provided with the water conservancy diversion subassembly in the process cavity, the water conservancy diversion subassembly encircles the reaction base sets up, be used for with the gaseous water conservancy diversion of admitting air piece input distributes to in the process cavity, the bottom of water conservancy diversion subassembly has first toper portion, the external diameter of first toper portion reduces from top to bottom gradually, the process cavity have with first toper portion cooperation sets up and the internal diameter from top to bottom reduces gradually first toper locating surface, first toper portion corresponds the setting on the first toper locating surface.
2. The semiconductor device as claimed in claim 1, wherein a first gas inlet channel and a second gas inlet channel are formed in the gas inlet block, the flow guide assembly has a first gas guide channel and a second gas guide channel, the first gas inlet channel is correspondingly communicated with the first gas guide channel, the second gas inlet channel is correspondingly communicated with the second gas guide channel, wherein a gas outlet of the first gas guide channel is not lower than the reaction base, and a gas outlet of the second gas guide channel is lower than the reaction base.
3. The semiconductor device according to claim 2, wherein the flow guide assembly comprises an upper flow guide ring and a lower flow guide ring which are coaxial, the upper flow guide ring is disposed above the lower flow guide ring in a stacked manner, wherein the second gas guide channel is formed in the lower flow guide ring and penetrates through a sidewall of the lower flow guide ring in a thickness direction, a top surface of the lower flow guide ring is not lower than the carrying surface, a plurality of first flow guide grooves extending to a top surface of the lower flow guide ring are formed in a side surface of the lower flow guide ring, a plurality of second flow guide grooves extending in a radial direction of the upper flow guide ring are formed in a bottom surface of the upper flow guide ring, a plurality of bottom ends of the first flow guide grooves are formed as gas inlets of the plurality of first gas inlet channels, top ends of the plurality of first flow guide grooves are communicated with the plurality of second flow guide grooves in a one-to-one correspondence manner, and openings of the plurality of second flow guide grooves in an inner wall of the upper flow guide ring are formed as gas outlets of the plurality of first gas inlet channels .
4. The semiconductor device according to claim 3, wherein the top of the upper deflector ring has a second tapered portion, the outer diameter of the second tapered portion gradually increases from top to bottom, the top of the process chamber has a second tapered locating surface with an inner diameter gradually increasing from top to bottom, and the second tapered portion of the upper deflector ring is attached to the second tapered locating surface.
5. The semiconductor device according to any one of claims 1 to 4, wherein the process chamber comprises a support ring, an upper outer wall sealing a top end of the support ring, and a lower outer wall sealing a bottom end of the support ring, the gas inlet block being disposed on the support ring, the first tapered locating surface being formed on the lower outer wall.
6. The semiconductor device according to claim 5, wherein a top portion of the upper outer wall is formed into a curved surface, and a height of the top portion of the upper outer wall is gradually reduced from a central region to an edge region.
7. The semiconductor device according to claim 3 or 4, wherein the semiconductor device further comprises a plurality of flow guide rings, one ends of the plurality of flow guide rings are arranged in the plurality of second air guide channels in a one-to-one correspondence manner, the other ends of the plurality of flow guide rings are respectively arranged in the corresponding second air inlet channels, and the cross-sectional outer contours of the flow guide rings correspond to the cross-sectional shapes of the corresponding second air guide channels and the corresponding second air inlet channels.
8. The semiconductor device according to claim 7, wherein the second gas inlet channel comprises a flow guiding section and a fitting section, the fitting section is located on a side facing the second gas guide channel, the fitting section has a cross section corresponding in shape and size to an outer wall of the flow guiding ring, and the cross section of the flow guiding section is smaller than that of the fitting section.
9. The semiconductor device according to claim 7, wherein the cross-sectional outer contour of the current guiding ring is rectangular, the projected shape of the current guiding ring on the horizontal plane is parallelogram, and the sides of the parallelogram corresponding to the two ends of the current guiding ring have parallel lines tangent to the side wall of the lower current guiding ring corresponding to the position of the current guiding ring.
10. The semiconductor device according to claim 7, wherein the first gas inlet channel and the second gas inlet channel have the same height, two gas inlet blocks are disposed on a sidewall of the process chamber, two first gas inlet channels and a second gas inlet channel between the two first gas inlet channels are formed in each gas inlet block, the two gas inlet blocks are disposed side by side, and two adjacent first gas inlet channels communicate with the same first gas inlet channel.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202111004313.0A CN113718332A (en) | 2021-08-30 | 2021-08-30 | Semiconductor device with a plurality of semiconductor chips |
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| CN202111004313.0A CN113718332A (en) | 2021-08-30 | 2021-08-30 | Semiconductor device with a plurality of semiconductor chips |
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| CN202111004313.0A Pending CN113718332A (en) | 2021-08-30 | 2021-08-30 | Semiconductor device with a plurality of semiconductor chips |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN115305457A (en) * | 2022-08-16 | 2022-11-08 | 拓荆科技(上海)有限公司 | Sealing apparatus and semiconductor processing apparatus |
| CN117467976A (en) * | 2023-10-31 | 2024-01-30 | 北京北方华创微电子装备有限公司 | Upper liner ring, lower liner ring, gas inlet liner and liner for vapor deposition process chamber |
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| CN112144112A (en) * | 2020-09-22 | 2020-12-29 | 北京北方华创微电子装备有限公司 | Semiconductor process equipment |
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| US6093252A (en) * | 1995-08-03 | 2000-07-25 | Asm America, Inc. | Process chamber with inner support |
| US20030199514A1 (en) * | 2002-03-27 | 2003-10-23 | Fryburg David A. | Methods for improving efficacy of treatment with growth hormone secretagogues |
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| CN115305457A (en) * | 2022-08-16 | 2022-11-08 | 拓荆科技(上海)有限公司 | Sealing apparatus and semiconductor processing apparatus |
| CN117467976A (en) * | 2023-10-31 | 2024-01-30 | 北京北方华创微电子装备有限公司 | Upper liner ring, lower liner ring, gas inlet liner and liner for vapor deposition process chamber |
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