CN219260274U

CN219260274U - Exhaust structure and film forming apparatus

Info

Publication number: CN219260274U
Application number: CN202320103660.7U
Authority: CN
Inventors: 刘鹏; 徐文立; 唐凯凯; 沈磊
Original assignee: Ningbo Hiper Vacuum Technology Co Ltd
Current assignee: Ningbo Hengpu Technology Co ltd
Priority date: 2023-02-03
Filing date: 2023-02-03
Publication date: 2023-06-27
Anticipated expiration: 2033-02-03

Abstract

The utility model discloses an exhaust structure, which relates to the technical field of film forming devices and comprises the following components: the exhaust structure body can be arranged at the bottom of a reaction chamber of the film forming device, and an exhaust port is arranged on the exhaust structure body and can be communicated with the reaction chamber so as to exhaust gas in the reaction chamber; the exhaust ports are arranged in a plurality, and all the exhaust ports can be uniformly distributed around the base in the reaction chamber. The utility model also discloses a film forming device comprising the exhaust structure. The utility model can realize multi-side air outlet of the reaction chamber, ensures uniform air outlet and is beneficial to uniform film thickness of the film.

Description

Exhaust structure and film forming apparatus

Technical Field

The utility model relates to the technical field of film forming devices, in particular to an exhaust structure and a film forming device.

Background

When a semiconductor wafer is prepared, the inside of a reaction chamber of a film forming device is in a normal pressure or negative pressure state, and raw material gas enters the inside of the reaction chamber to contact with a wafer substrate for epitaxial growth; in order to ensure uniform and stable air intake, the reacted gas is rapidly discharged from an air outlet below a base at the bottom of the reaction chamber, and the atmosphere in the reaction chamber is kept in dynamic balance in the film forming process.

The exhaust port is a communication port between the reaction chamber and the exhaust pipeline, and the position distribution of the exhaust port influences the gas flow and the exhaust rate, so that the position of the exhaust port should be avoided from changing the original flow trend of the gas as much as possible, and the gas flow channel of the exhaust end is simplified. However, the existing reaction chamber is only provided with an exhaust port at the bottom single side, so that single-side exhaust is realized, and when the single-side exhaust is carried out, gas gathers towards one side, which is not beneficial to uniform film thickness.

Disclosure of Invention

The utility model aims to provide an exhaust structure and a film forming device, which are used for solving the problems in the prior art, realizing multi-side air outlet of a reaction chamber, ensuring uniform air outlet and being beneficial to uniform film thickness of a film formed.

In order to achieve the above object, the present utility model provides the following solutions:

the present utility model provides an exhaust structure including: the exhaust structure body can be arranged at the bottom of a reaction chamber of the film forming device, and an exhaust port is arranged on the exhaust structure body and can be communicated with the reaction chamber so as to exhaust gas in the reaction chamber; the exhaust ports are arranged in a plurality, and all the exhaust ports can be uniformly distributed around the base in the reaction chamber.

Preferably, the exhaust structure main body is of a circular structure, and all the exhaust ports are uniformly distributed along the circumference.

Preferably, the exhaust port penetrates the exhaust structure body in a vertical direction.

Preferably, the exhaust structure main body is also uniformly provided with a plurality of preformed holes, and the preformed holes and the exhaust port are alternately arranged along the circumferential direction; wherein the preformed hole is further provided with a pipe plug capable of plugging the preformed hole.

Preferably, the exhaust structure main body is further provided with an annular buffer zone, the buffer zone can encircle the base is arranged, the top of the exhaust port is communicated with the bottom of the buffer zone, the top of the buffer zone is provided with a top cover, and the top cover is provided with air holes so that gas in the reaction cavity enters the buffer zone.

Preferably, the exhaust structure main body comprises a circular bottom plate, an annular side plate is arranged at the outer edge of the circular bottom plate, the annular side plate is perpendicular to the circular bottom plate, and the exhaust port radially penetrates through the annular side plate.

Preferably, the bottom of the exhaust structure main body is also connected with a collecting device, the collecting device can collect liquid sediment in the reaction chamber, and a cooling jacket is sleeved outside the collecting device.

Preferably, the inner wall of the exhaust structure main body is further covered with an anti-deposition layer, and the anti-deposition layer can inhibit the gas in the reaction chamber from depositing on the exhaust structure main body.

Preferably, an anti-deposition sleeve is further arranged in the exhaust port, and the anti-deposition sleeve can inhibit the gas in the reaction chamber from depositing at the exhaust port.

The utility model also provides a film forming device comprising the exhaust structure.

Compared with the prior art, the utility model has the following beneficial technical effects:

the multiple exhaust ports are arranged in the utility model, and all the exhaust ports can be uniformly distributed around the base in the reaction chamber, so that multi-side air outlet of the reaction chamber can be realized, the air outlet uniformity is ensured, and the uniformity of film thickness of a film is facilitated.

Drawings

In order to more clearly illustrate the embodiments of the present utility model or the technical solutions in the prior art, the drawings that are needed in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present utility model, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.

FIG. 1 is a schematic view showing an internal layout of a reaction chamber of a neutral film forming apparatus according to an embodiment of the present utility model;

FIG. 2 is a diagram showing the distribution of exhaust ports on an exhaust structure according to a first embodiment of the present utility model;

FIG. 3 is a schematic view of an exhaust port arranged along a radial direction in a second embodiment of the present utility model;

FIG. 4 is a schematic view of a collecting device according to a second embodiment of the present utility model;

FIG. 5 is a diagram illustrating the configuration of an additional ring buffer in accordance with a third embodiment of the present utility model;

FIG. 6 is a diagram showing the positional relationship between the exhaust port and the top cover in the third embodiment of the present utility model;

FIG. 7 is a schematic view of an annular flow passage with a top cover removed from an exhaust port in a third embodiment of the present utility model;

wherein, 1 is the inlet chamber, 2 is the reaction chamber, 3 is upper sleeve, 4 is lower sleeve, 5 is the base, 6 is the deposit-proof layer, 7 is the deposit-proof sleeve, 8 is the gas vent, 9 is the pipe plug, 10 is the horizontal gas vent, 11 is the valve, 12 is collection device, 13 is the top cap, 14 is the buffer zone.

Detailed Description

The following description of the embodiments of the present utility model will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present utility model, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the utility model without making any inventive effort, are intended to be within the scope of the utility model.

In order that the above-recited objects, features and advantages of the present utility model will become more readily apparent, a more particular description of the utility model will be rendered by reference to the appended drawings and appended detailed description.

Example 1

As shown in fig. 1-2, the present embodiment provides an exhaust structure, which mainly includes an exhaust structure main body, wherein the exhaust structure main body can be disposed at the bottom of a reaction chamber 2 of a film forming device, an exhaust port 8 is disposed on the exhaust structure main body, and the exhaust port 8 can be communicated with the reaction chamber 2 and an exhaust pipeline to exhaust gas in the reaction chamber 2; the exhaust ports 8 are arranged in a plurality, and all the exhaust ports 8 can surround the base 5 in the reaction chamber 2 to be uniformly distributed, so that multi-side air outlet of the reaction chamber 2 can be realized, uniform air outlet is ensured, and uniform film thickness of a film is facilitated.

Further, as shown in fig. 1, the film forming apparatus in this embodiment is a vertical film forming apparatus, and mainly includes a reaction chamber 2, an air inlet chamber 1 is disposed at the top of the reaction chamber 2, a base 5 is disposed at the bottom of the reaction chamber, a sleeve is disposed on the base 5 for placing a wafer in the reaction chamber 2, and is capable of guiding gas, wherein the sleeve includes an upper sleeve 3 and a lower sleeve 4 disposed from top to bottom, the upper sleeve 3 is disposed between the air inlet chamber 1 and the base 5, the lower sleeve 4 is disposed around the base 5, and a flow channel is formed between the lower sleeve and the base 5. In this embodiment, the gas in the reaction chamber 2 is supplied from a gas source through the top inlet chamber 1, the gas is discharged from a nozzle provided at the bottom of the inlet chamber 1, flows downward along a flow path formed by the sleeve, contacts and reacts with the wafer on the surface of the susceptor 5 located directly below the inlet chamber 1 to perform epitaxial growth, and the tail gas flows laterally away from the wafer and obliquely downward to the exhaust port 8 at the bottom of the reaction chamber 2.

In this embodiment, the gas in the reaction chamber 2 keeps a trend from top to bottom, and enters the exhaust pipeline through the exhaust port 8 at the bottom, so that the gas is reduced from diffusing to the outside of the runner and contacting with the internal components of the reaction chamber 2.

In the present embodiment, the gas inlet chamber 1 supplies various raw material gases required in the film formation process, and adjusts the gas flow direction to improve the gas inlet uniformity; the sleeve is used for guiding gas, so that the gas contacts with the wafer in a preset flow direction, and the outward diffusion of the gas is reduced; and the base 5 is opposite to the air inlet chamber 1 and is used for loading and supporting wafers; after the reaction gas and the wafer are in contact reaction and epitaxial growth, the residual gas transversely passes through an annular flow channel formed by the lower sleeve 4 and the wall surface of the base 5 to the exhaust port 8 at the bottom, and is pumped out of the cavity of the reaction chamber through the exhaust port 8; the exhaust port 8 may be connected to a vacuum pipe, and the vacuum pipe may be connected to a collecting device, so that impurities such as the sediment in the gas may be filtered and collected.

In this embodiment, the film forming device has a cylindrical structure, the main body of the exhaust structure has a circular structure, and all the exhaust ports 8 are uniformly distributed along the circumference; alternatively, the shapes of the film forming apparatus and the exhaust structure main body may be selected as needed, and for example, a rectangular parallelepiped or other polygonal column structure may be selected.

In this embodiment, the film forming apparatus may be detachably mounted on the bottom of the reaction chamber 2, or integrally formed with the reaction chamber 2 to form the bottom of the reaction chamber 2.

In this embodiment, the exhaust structure main body mainly includes a circular bottom plate made of metal, a through hole is provided in the middle of the circular bottom plate for mounting the base 5, the exhaust ports 8 penetrate through the circular bottom plate in the vertical direction, and all the exhaust ports 8 are uniformly distributed around the base 5 along the circumference with the axis of the base 5 as the center.

In this embodiment, as shown in fig. 2, a plurality of preformed holes are also uniformly distributed on the exhaust structure body, and the preformed holes and the exhaust ports 8 are alternately arranged along the circumferential direction; wherein the preformed hole is further provided with a pipe plug 9, and the pipe plug 9 can plug the preformed hole; when the reserved hole needs to be connected with other functional components (such as a collecting device), the pipe plug 9 in the reserved hole is taken down so that the reserved hole is connected with the functional components, and when the reserved hole does not work, the pipe plug 9 is blocked in the reserved hole to prevent sediment from entering the reserved hole; or, the pipe plug 9 in the preformed hole can be removed, so that the preformed hole is used as an exhaust port for exhausting, the number of the exhaust ports is increased, and the exhaust efficiency is improved.

In this embodiment, the number of the exhaust ports 8 and the reserved holes is preferably 4, and the exhaust ports 8 and the reserved holes are circular holes, and the circle centers of all the exhaust ports 8 and all the reserved holes are on the same circle; further, the number of the exhaust ports 8 and the reserved holes can be selected according to specific working requirements, such as 2, 3 or 5.

In this embodiment, the inner wall of the exhaust structure main body is further covered with an anti-deposition layer 6, where the anti-deposition layer 6 can inhibit the gas in the reaction chamber 2 from depositing on the exhaust structure main body, and the anti-deposition layer 6 can shield the inner wall metal surface of the exhaust structure main body to prevent the formation of deposits on the inner wall of the exhaust structure main body; further, an anti-deposition sleeve 7 is arranged in the exhaust port 8, and the anti-deposition sleeve 7 can inhibit the gas in the reaction chamber 2 from depositing at the exhaust port 8, so that deposit accumulation at the exhaust port 8 is reduced to influence the exhaust rate.

In the embodiment, the deposition prevention layer 6 and the deposition prevention sleeve 7 are arranged, so that the gas in the reaction chamber 2 can be prevented from depositing at the bottom of the reaction chamber 2 and the exhaust port, the influence of the deposition of impurities at the bottom of the reaction chamber 2 and the exhaust port 8 on the subsequent wafer growth is avoided, and the film forming quality is ensured; the anti-deposition layer 6 and the anti-deposition sleeve 7 may be selected according to specific working requirements, for example, the anti-deposition layer 6 may be an anti-deposition coating (such as a carborundum coating or a silicon carbide coating) coated on the inner wall of the exhaust structure main body, or the anti-deposition layer 6 may be an anti-deposition cover covered on the inner wall of the exhaust structure main body, the surface of the anti-deposition cover is coated with the anti-deposition coating, and the anti-deposition sleeve 7 is also coated with the anti-deposition layer 6; alternatively, the deposition preventing layer 6 is a deposition preventing cover made of deposition preventing material, and the deposition preventing sleeve 7 is also made of deposition preventing material.

As a preferred embodiment, the anti-deposition layer 6 is an anti-deposition cover in this embodiment, and the anti-deposition cover and the anti-deposition sleeve 7 are made of quartz, so that the anti-deposition cover can play a role of heat insulation while preventing deposition; wherein, prevent depositing cover and prevent depositing sleeve pipe 7 can set up on exhaust structure main part through joint, overlap joint or mode such as bolted connection to dismantle the clearance of being convenient for. Further, the anti-deposition shield and the anti-deposition sleeve 7 can be made of other materials, such as zirconia ceramics, etc., according to the specific working requirements.

Further, in the present embodiment, the pipe plug 9 is also made of a quartz material to suppress deposition.

Example two

The present embodiment is an improvement based on the first embodiment, and the difference between the present embodiment and the first embodiment is mainly that:

in this embodiment, as shown in fig. 5 to 7, the exhaust structure main body is further provided with an annular buffer area 14, and by adding the buffer area 14, the uniformity of the air flow at the exhaust end can be improved; the buffer area 14 is an annular flow channel formed by sinking on the circular bottom plate, the annular flow channel can coaxially surround the base, the bottom of the annular flow channel is lower than the upper surface of the circular bottom plate, the exhaust port 8 is connected to the bottom of the annular flow channel, the top of the annular flow channel is provided with the top cover 13, and a plurality of ventilation holes are uniformly distributed on the top cover 13; the gas in the reaction chamber 2 diffuses into the buffer zone 14 through the ventilation holes uniformly distributed on the surface of the top cover 13, and then is separated from the reaction chamber 2 along the annular flow channel through the exhaust port 8.

In this embodiment, the top cover 13 is also made of quartz material to suppress deposition.

Example III

in this embodiment, as shown in fig. 3 and 4, the exhaust structure body includes a circular bottom plate, and an outer edge of the circular bottom plate is provided with an annular side plate, the annular side plate is perpendicular to the circular bottom plate, and the exhaust port 8 penetrates through the annular side plate in a radial direction to form a transverse exhaust port 10; the gas in the reaction chamber 2 flows downwards to the bottom, and is transversely pumped out of the reaction chamber through the transverse exhaust port 10 along the circular bottom plate, the gas flow trend is changed, the flow channel is prolonged, more components pass through, and sediment is easy to remain in the reaction chamber. Therefore, the round bottom plate is also connected with a discharge hole, the bottom of the discharge hole is connected with a collecting device 12 through a valve 11, and in the high temperature section of film formation, the valve 11 is opened, and the oily silane and other sediments flow to the discharge hole in a liquid state along with the air flow direction and flow into the collecting device 12 for collection by the dead weight.

In this embodiment, the collecting device 12 may be a conventional collecting container such as a collecting tank, and a cooling jacket is sleeved on the outer side of the collecting device 12, and the collecting device 12 and the sediments therein are cooled by the cooling jacket, so that volatilization of sediments in the collecting device 12 in the reaction process is reduced, and film forming quality is affected.

Example IV

The present embodiment provides a film forming apparatus including the exhaust structure in the first, second, or third embodiments.

It should be noted that it will be apparent to those skilled in the art that the present utility model is not limited to the details of the above-described exemplary embodiments, but may be embodied in other specific forms without departing from the spirit or essential characteristics thereof. The present embodiments are therefore to be considered in all respects as illustrative and not restrictive, the scope of the utility model being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein.

The principles and embodiments of the present utility model have been described in detail with reference to specific examples, which are provided to facilitate understanding of the method and core ideas of the present utility model; also, it is within the scope of the present utility model to be modified by those of ordinary skill in the art in light of the present teachings. In view of the foregoing, this description should not be construed as limiting the utility model.

Claims

1. An exhaust structure, characterized by: comprising the following steps: the exhaust structure body can be arranged at the bottom of a reaction chamber of the film forming device, and an exhaust port is arranged on the exhaust structure body and can be communicated with the reaction chamber so as to exhaust gas in the reaction chamber; the exhaust ports are arranged in a plurality, and all the exhaust ports can be uniformly distributed around the base in the reaction chamber.

2. The exhaust structure according to claim 1, characterized in that: the exhaust structure body is of a circular structure, and all exhaust ports are uniformly distributed along the circumference.

3. The exhaust structure according to claim 1 or 2, characterized in that: the exhaust port penetrates through the exhaust structure main body along the vertical direction.

4. A vent structure according to claim 3, wherein: the exhaust structure is characterized in that an annular buffer zone is further arranged on the exhaust structure main body, the buffer zone can encircle the base, the top of the exhaust port is communicated with the bottom of the buffer zone, a top cover is arranged on the top of the buffer zone, and ventilation holes are formed in the top cover so that gas in the reaction chamber enters the buffer zone.

5. The exhaust structure according to claim 4, characterized in that: a plurality of preformed holes are uniformly distributed on the exhaust structure main body, and the preformed holes and the exhaust port are alternately arranged along the circumferential direction; wherein the preformed hole is further provided with a pipe plug capable of plugging the preformed hole.

6. The exhaust structure according to claim 2, characterized in that: the exhaust structure main body comprises a circular bottom plate, an annular side plate is arranged at the outer edge of the circular bottom plate, the annular side plate is perpendicular to the circular bottom plate, and the exhaust port radially penetrates through the annular side plate.

7. The exhaust structure according to claim 6, characterized in that: the bottom of exhaust structure main part still is connected with collection device, collection device can collect liquid sediment in the reaction chamber, just collection device's outside cover is equipped with the cooling jacket.

8. The exhaust structure according to claim 1, characterized in that: the inner wall of the exhaust structure main body is also covered with an anti-deposition layer, and the anti-deposition layer can inhibit the gas in the reaction chamber from depositing on the exhaust structure main body.

9. The exhaust structure according to claim 1 or 8, characterized in that: and an anti-deposition sleeve is further arranged in the exhaust port, and the anti-deposition sleeve can inhibit the gas in the reaction chamber from generating deposition at the exhaust port.

10. A film forming apparatus is characterized in that: an exhaust structure comprising any of claims 1-9.