CN218435945U - Base and chemical vapor deposition equipment - Google Patents

Abstract

The utility model provides a base for chemical vapor deposition equipment contains: the base bottom surface is a plane or a downwards concave cambered surface; the substrate bearing surface extends upwards and outwards from the outer edge of the bottom surface of the base, is an inclined surface inclining downwards from outside to inside, and is contacted with the outer edge of the substrate through the substrate bearing surface so as to bear the substrate; and the flow guide grooves are arranged on the substrate bearing surface and are used for discharging the process gas and/or the purified gas between the back surface of the substrate and the base. The utility model also provides a chemical vapor deposition equipment. By the utility model, the heat around the lifting pin hole can be guided away quickly, so that the surface temperature of the substrate is uniform; simultaneously the utility model discloses can also reduce the deposit at the substrate back, the particle pollution in the reaction chamber that significantly reduces.

Description

Base and chemical vapor deposition equipment

Technical Field

The utility model relates to a semiconductor equipment technical field, in particular to base and chemical vapor deposition equipment.

Background

In semiconductor manufacturing, chemical Vapor Deposition (CVD) is a well-known process for forming thin film materials on substrates. Typically, the CVD process is carried out at elevated temperatures and gaseous molecules of the material to be deposited are supplied to the substrate to accelerate the chemical reaction and produce a high quality thin film.

The base has a recess in the center of the top for receiving a substrate. Typically, a plurality of lift pin holes are formed in the surface of the pit for receiving a plurality of lift pins. Before the process begins, a mechanical arm outside the reaction chamber transfers the substrate into the reaction chamber and places the substrate on a lifting thimble lifted out of a lifting pin hole. Then, the lifting thimble falls and retracts into the lifting pin hole, and the substrate is placed in the concave pit.

Usually, the back surface of the substrate is in surface contact with the surface of the pit, in the process of placing the substrate, the substrate can compress the gas above the pit downwards, so that the compressed gas generates an upward resistance to the movement of the substrate, the substrate is easy to slide when placed on the base, the back surface of the substrate is scratched, meanwhile, the collision between the side surface of the base and the edge of the substrate can cause the damage of the substrate, and the damage from the back surface and the side surface of the substrate can spread to the surface of the substrate and further influence the quality of film growth.

During the CVD process, process gases enter the back surface of the substrate and the surfaces of the pits, thereby creating deposits on the back surface of the substrate during the process, which can affect the yield of the substrate process and cause particle contamination in the chamber.

In addition, a critical parameter in the process is the substrate temperature. Because the process gases react and deposit on the substrate at a particular temperature, the substrate temperature determines the rate at which material is deposited on the substrate. If the temperature of the substrate surface varies, uneven deposition of the thin film occurs and physical properties on the substrate will be uneven. Especially in epitaxial deposition, even slight temperature non-uniformity can cause the deposited film to slip. This can adversely affect the uniformity of the thin film grown on the substrate surface due to the higher temperature near the lift pin holes.

SUMMERY OF THE UTILITY MODEL

An object of the utility model is to provide a base, through the guiding gutter of setting at the substrate loading end, can prevent that the substrate from sideslipping and avoid the damage of the substrate back at the purified gas between the in-process effective discharge substrate back of placing the substrate and the pedestal bottom surface. Meanwhile, the base of the utility model can also discharge the process gas between the back surface of the substrate and the bottom surface of the base in the process procedure, thereby preventing the sediment from being generated on the back surface of the substrate; furthermore, purified gas can be introduced between the bottom of the substrate and the bottom surface of the base through the air holes in the process procedure and is discharged from the flow guide groove, so that the heat around the lifting pin hole can be quickly and effectively taken away while the sediment is prevented from being generated on the back of the substrate, and the surface temperature of the substrate is ensured to be uniform.

In order to achieve the above object, the present invention provides a susceptor for a chemical vapor deposition apparatus, the susceptor comprising: the base bottom surface is a plane or a downwards concave cambered surface; the substrate bearing surface extends upwards and outwards from the outer edge of the bottom surface of the base, is a slope inclining downwards from outside to inside, and is in contact with the outer edge of the substrate through the substrate bearing surface so as to bear the substrate; and the flow guide grooves are arranged on the substrate bearing surface and are used for discharging the process gas and/or the purified gas between the back surface of the substrate and the base.

Optionally, the base further comprises: the base surface extends upwards and outwards from the outer edge of the substrate bearing surface, and the base surface is a plane.

Optionally, the bottom surface of the base is provided with a plurality of lifting pin holes, and the guide grooves correspond to the lifting pin holes respectively.

Optionally, the plurality of flow guide grooves are uniformly distributed along the circumferential direction of the base; the number of the flow guide grooves is at least 3.

Optionally, the diversion trench is one or more of a U-shaped trench and a V-shaped trench.

Optionally, the inclination angle of the substrate carrying surface relative to the horizontal plane is 1-2 °.

Optionally, a plurality of air holes are formed around the lift pin hole.

Optionally, the purge gas between the substrate back surface and the susceptor bottom surface is exhausted through the air holes.

Optionally, in the process, the purge gas enters between the back surface of the substrate and the bottom surface of the base through the air holes and is discharged from the corresponding diversion trenches.

Optionally, the air holes are one or more of a waist-shaped through hole, a straight-line-shaped through hole and an oval-shaped through hole.

Optionally, the plurality of air holes corresponding to the lift pin holes are distributed between the lift pin holes and the corresponding guide grooves.

Optionally, the total open surface area of all the air holes is 1% -5% of the area of the bottom surface of the base.

The utility model also provides a chemical vapor deposition equipment contains a reaction chamber, be equipped with in the reaction chamber and have as the utility model the base for bear the weight of the substrate.

Compared with the prior art, the beneficial effects of the utility model reside in that:

compared with the prior art, the utility model discloses a base and chemical vapor deposition equipment beneficial effect lie in:

1) In the utility model, a plurality of diversion trenches are arranged on the substrate bearing surface, and purified gas between the back surface of the substrate and the bottom surface of the base can be rapidly discharged through the diversion trenches in the process of placing the substrate; preventing the purified gas between the back surface of the substrate and the bottom surface of the base from generating an upward resistance to the substrate to cause the substrate to slide in the placing process; through the utility model discloses effectively avoided because of the substrate back fish tail that the substrate slides and leads to, prevented that the fish tail at the substrate back from stretching to the substrate surface and influencing the quality that substrate surface film grows.

2) The utility model discloses in, the substrate loading end through the slope further prevents that the substrate from producing the slip placing the in-process, reduces the collision at base side and substrate edge, has further reduced the area of contact of base with the substrate simultaneously, has reduced the heat loss that substrate edge and base caused because of the heat transfer, has guaranteed substrate surface temperature's homogeneity.

3) The utility model provides a plurality of guiding gutters correspond with a plurality of lift pinhole positions respectively. In the process, the temperature near the lifting pin hole is high, and the temperature of the edge of the base above the guide groove is relatively low, so that the temperature near the lifting pin can be adjusted through the guide groove, the temperature around the lifting pin hole can be effectively adjusted, and the uniformity of the surface temperature of the substrate is facilitated.

4) The utility model is also provided with a plurality of air holes on the bottom surface of the base; in the process, the purified gas can enter the space between the bottom of the substrate and the bottom surface of the base through the air holes and is discharged from the corresponding diversion grooves, so that the process gas is further prevented from entering the space between the bottom of the substrate and the base, and deposits are generated on the back surface of the substrate. When the process gas is switched, the old process gas between the bottom of the substrate and the bottom surface of the base can be quickly discharged through the air holes and the flow guide grooves, and the particle pollutants generated by doping the old process gas and the new process gas are prevented.

5) The utility model provides a plurality of guiding gutters, a plurality of gas pocket correspond with lift pinhole position respectively, through setting up the gas pocket between the guiding gutter and the lift pinhole that correspond for the purified gas that gets into between substrate back and the base bottom surface from the gas pocket can be discharged from the lift pinhole with the shortest path, realizes quick, the effectual heat of taking away around the lift pinhole, has guaranteed substrate surface temperature's homogeneity.

Drawings

In order to more clearly illustrate the technical solution of the present invention, the drawings required for the description will be briefly introduced below, and obviously, the drawings in the following description are an embodiment of the present invention, and other drawings can be obtained by those skilled in the art without inventive efforts based on these drawings:

FIG. 1 is a schematic cross-sectional view of a chemical vapor deposition apparatus;

fig. 2 is a top view of a base according to a first embodiment of the present invention;

FIG. 3 isbase:Sub>A side view of FIG. 2 taken along line A-A;

FIG. 4 is a side view of FIG. 2 taken along line B-B;

fig. 5 is a top view of a base according to another embodiment of the present invention;

FIG. 6 is a side view of FIG. 5 taken along line C-C;

fig. 7 is a top view of a base according to a second embodiment of the present invention.

Detailed Description

The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.

It should be noted that, in this document, the terms "include", "have" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, a method, an article or a terminal device including a series of elements includes not only those elements but also other elements not specifically listed, or further includes elements inherent to such process, method, article or terminal device. Without further limitation, an element defined by the phrases "comprising 8230; \8230;" or "comprising 8230; \8230;" does not exclude additional elements from existing in a process, method, article, or terminal device that comprises the element.

It should be noted that the drawings are in simplified form and are not to be construed as precise ratios, which are merely intended to facilitate and clarify the explanation of the embodiments of the present invention.

FIG. 1 is a schematic cross-sectional view of a chemical vapor deposition apparatus 10.

As shown in fig. 1, the chemical vapor deposition apparatus 10 includes a reaction chamber 120, a preheating ring 115, a susceptor 105, a process gas inlet 113, a purge gas inlet 114, and a gas outlet 106.

The reaction chamber 120 is used for depositing and/or growing a thin film on a substrate W, such as a silicon semiconductor wafer or a silicon-on-insulator (SOI) semiconductor wafer. As shown in FIG. 1, the reaction chamber 120 is enclosed by a base ring 118, an upper quartz dome 116, and a lower quartz dome 108, with the base ring 118, the upper quartz dome 116, and the lower quartz dome 108 generally defining an interior region of the reaction chamber. The upper and lower quartz domes 116, 108 may be flat or have a generally dome shape.

As shown in fig. 1, the inner sidewall of the base ring 118 is also provided with an upper liner 100 and a lower liner 112 for preventing a reaction between the process gas and the base ring 118, which is generally made of a metal material such as stainless steel. The upper liner 100 and the lower liner 112 may be made of a non-reactive material such as quartz.

As shown in fig. 1, the preheating ring 115 is circumferentially disposed on the outer periphery of the susceptor 105 for heating the process gas before the process gas flowing into the reaction chamber 120 comes into contact with the substrate W. The lower liner 112 of the reaction chamber 120 is provided with a support 117 for supporting the preheating ring 115. The preheat ring 115 and the susceptor 105 are typically opaque to absorb radiant heating light generated by the set of infrared heating lamps 101 located above the chamber 120 and below the chamber 120. In the embodiment of the present invention, the material of the preheating ring 115 and the base 105 may be any one of graphite of silicon carbide and coated silicon carbide.

As shown in fig. 1, the set of infrared heating lamps 101 may be used to provide heat to the reaction chamber 120, maintain the preheat ring 115 and the susceptor 105 at a temperature above ambient, and control the power of the set of infrared heating lamps 101 by a controller (not shown) based on the temperature obtained by the infrared thermometer 102. The shape and arrangement of the infrared heating lamp assembly 101 in fig. 1 are merely examples, and should not be construed as a limitation of the present invention. In order to guarantee that the temperature in the reaction chamber is even, or in order to realize the control by temperature change to local region in the reaction chamber, the utility model discloses can also use the different straight line shape heating lamp of length, perhaps the non-straight line shape dysmorphism heating lamp, a plurality of heating lamps can also be arranged into lamp array in groups.

As shown in fig. 1, the process gas injection port 113 and the purge gas injection port 114 are disposed at one end of the reaction chamber 120, and the gas exhaust port 106 is disposed at the other end of the reaction chamber 120 opposite to the process gas injection port 113. When the susceptor 105 is in the processing position (the substrate W on the susceptor 105 is about the same height as the preheat ring), the susceptor 105 divides the interior volume of the reaction chamber 120 into a process gas region and a purge gas region. The process gas region is located above the susceptor and the purge gas region is located below the susceptor. During processing of a substrate W, the susceptor 105 is positioned at a processing position and rotates about the central axis of the rotating support shaft. A process gas is flowed into the process gas region through the process gas injection port 113; then, the process gas flows over the substrate surface to effect deposition of the film on the substrate surface; finally, the process gas flows out of the reaction chamber 120 through the gas exhaust port 106. Simultaneously with the substrate processing, the purge gas is flowed into the purge gas region through the purge gas injection port 114, and the purge gas flows downward and around over the backside of the susceptor 105 and along the flow path a. The flow of the purge gas prevents or substantially prevents the process gas from entering the purge gas region, or reduces the diffusion of the process gas into the purge gas region. The purge gas exits the purge gas zone (along flow path b) and exits the reaction chamber 120 through the gas exhaust 106. In some cases, a purge gas may be introduced into the chamber during times when substrate processing is not being performed, such as by introducing a purge gas into the chamber 120 prior to a process step to remove residual process gases from the previous step.

As shown in FIG. 1, a substrate W is supported by a susceptor 105 within a reaction chamber 120. The base 105 has a pocket in which the substrate W is placed. The size of the susceptor 105 may vary depending on the diameter of the substrate W, and in a preferred embodiment, the diameter of the pit is 1 to 10mm greater than the diameter of the substrate. The depth of the pits is substantially the same as the thickness of the substrate W. The edge portion of the lower surface of the susceptor 105 is coupled to a support arm 103 connected to a rotation support shaft 109, and the rotation support shaft 109 is driven to rotate and move up and down by an external motor (not shown), thereby rotating the susceptor 105 and the substrate W integrally around the central axis of the rotation support shaft 109 or moving the susceptor 105 up and down, so as to prevent excessive material from being deposited on the front edge of the substrate to provide a more uniform epitaxial layer. A plurality of lift pin holes (typically 3) are opened in the pit in the circumferential direction of the base 105. The plurality of lift pin holes are respectively used to receive a plurality of lift pins 111, and the lift pins 111 may support the substrate W while the substrate W is transferred. The bracket 110 is used for supporting the lifting pin 111, and the lifting pin 111 is driven to move up and down by driving the bracket 110 to move up and down. Wherein the movement of the bracket 110 and the movement of the rotation supporting shaft 109 are independent of each other.

When the substrate W is transferred, the susceptor 105 reaches a loading position (lower than the process gas injection port), and the lift pins 111 protrude from above the susceptor to receive the substrate W introduced into the reaction chamber. The susceptor 105 is then moved upward to a processing position and the lift pins 111 are moved downward below the susceptor (without interference of the lift pins 111 with the support arm 103) to place the substrate W in the pocket. Generally, the back surface of the substrate is in surface contact with the surface of the pit, and during the process of placing the substrate W, the substrate W compresses the gas above the pit downwards, so that the compressed gas generates an upward resistance to the movement of the substrate W, and the substrate W is easy to slide when placed on the base 105, thereby causing the back surface of the substrate to be scratched. The scratch on the back of the substrate can spread to the surface of the substrate, thereby affecting the quality of the film growth on the surface of the substrate. In addition, in the substrate processing process, process gas can enter between the back of the substrate and the concave pits to cause the deposition of the back of the substrate, which not only affects the yield of the substrate W processing, but also causes particle pollution to the environment in the reaction chamber due to the deposition peeled from the surfaces of the concave pits.

In addition, the temperature around the holes of the lift pins 111 is high, so that the temperature distribution on the surface of the substrate is not uniform, the film on the surface of the substrate slips, and the processing yield of the substrate W is affected.

Example one

Referring to fig. 2 to 4, in order to provide a susceptor for a chemical vapor deposition apparatus of the present invention, as shown in the cross-sectional view of the susceptor in fig. 3, the susceptor 205 comprises: a base bottom surface 2051, a substrate bearing surface 2052, and a base surface 2053. The base bottom surface 2051 is a flat surface or a downwardly concave arc surface. As shown in the top view of the base in fig. 2, the base bottom surface 2051 is provided with a plurality of lift pin holes 2054. In this embodiment, 3 lift pin holes 2054 are uniformly distributed along the circumferential direction of the base 205 (the number of lift pin holes 2054 is only used as an example and is not a limitation of the present invention). Lift pins (not shown) extend through the lift pin holes 2054 from below and out above the susceptor (with the susceptor 205 in the loading position) to carry substrates W introduced into the chamber. Through the descending motion of lifter pin, the ascending motion of base 205, with the steady placing of substrate W on the base (the lifter pin can go on in step with the motion of base 205 in step, also can go on step by step, the utility model discloses in do not limit).

The substrate bearing surface 2052 extends upward and outward from the outer edge of the base bottom surface 2051, and the substrate bearing surface 2052 is an inclined surface inclined downward from outside to inside, and contacts with the outer edge of the substrate through the substrate bearing surface 2052 to bear the substrate W. In this embodiment, the substrate carrying surface 2052 is inclined at an angle of 1 ° to 2 ° with respect to the horizontal plane. The inclined substrate carrying surface 2052 can reduce the sliding of the substrate W in the process of being placed on the susceptor 205, and can also reduce the contact area between the susceptor 205 and the substrate W, thereby greatly reducing the heat loss caused by the heat transfer between the edge of the substrate and the susceptor 205 and ensuring the uniformity of the surface temperature of the substrate.

The pedestal surface 2053 extends upwardly and outwardly from the outer edge of the substrate carrying surface 2052. The pedestal surface 2053 is a flat surface, and the pedestal surface 2053 is substantially the same height as the upper surface of a substrate W placed on the pedestal 205. The process gas can therefore flow smoothly over the substrate W without creating turbulence in the process gas region due to the difference in elevation between the susceptor surface 2053 and the upper surface of the substrate, preventing the uniformity of the process gas distribution within the reaction chamber from being affected by the turbulence. Meanwhile, the flat surface 2053 of the base can be uniformly heated, which is beneficial to the uniformity of the temperature at the edge of the substrate and prevents the uneven deposition of the film at the edge of the substrate.

As shown in fig. 2, a plurality of channels 210 are disposed on the substrate carrying surface 2052. As shown in fig. 4, which is a side view of fig. 2 along the line B-B, the channels 210 are U-shaped channels in this embodiment. In another embodiment, as shown in fig. 5 and 6, the channels 210 are V-shaped channels. During placement of the substrate W on the substrate carrying surface 2052, process and/or purge gases between the backside of the substrate and the pedestal 205 can be rapidly exhausted through the channels 210. Preventing the gas (purge gas and/or residual process gas in the chamber) between the backside of the substrate and the pocket from creating an upward resistance to the substrate W on the lift pins during movement of the pedestal 205 and lift pins, which could cause the substrate W to slide during placement. Through the utility model discloses a base 205 can prevent to load the substrate W time because of the substrate back fish tail that the substrate W slided and causes, prevents that the fish tail at the substrate back from stretching to the substrate surface, has guaranteed the quality that substrate surface film grows.

The number of channels 210 is at least 3. In this embodiment, as shown in fig. 3, 3 diversion trenches 210 are uniformly distributed along the circumferential direction of the base 205 and respectively correspond to the positions of 3 lift pin holes 2054. In a preferred embodiment, the guide grooves and the corresponding lift pin holes are located on the same diameter of the circle on which the bottom surface of the base is located. Because the temperature near the lift pin holes 2054 is high, and the temperature of the edge of the base above the guide groove 210 is relatively low, when the guide groove and each lift pin hole are positioned on the same diameter of the circle where the bottom surface of the base is positioned, the temperature around the lift pin holes can be effectively adjusted, which is beneficial to realizing the uniformity of the surface temperature of the substrate.

Example two

In this embodiment, as shown in fig. 7, the bottom surface 2051 of the susceptor is further provided with a plurality of gas holes 230, and the process gas and/or purge gas between the backside of the substrate and the susceptor 205 can be rapidly exhausted through the gas holes 230 during the process of placing the substrate W on the substrate carrying surface 2052.

The air holes 230 in this embodiment are one or more of a kidney-shaped through hole, a straight through hole, and an oval through hole. Compared with a circular through hole, the waist-shaped through hole, the straight-line-shaped through hole and the oval-shaped through hole can pass through more air flows, so that the number of the air holes 230 can be reduced, and the processing difficulty of the base 205 is reduced. In order to ensure the air flow through the air holes 230, in the present embodiment, the total opening surface area of all the air holes 230 is 1% to 5% of the area of the bottom surface of the base.

The base bottom surface 2051 forms an enclosed first space with the back surface of a substrate W placed on the substrate carrying surface 2052. During the process of the substrate, the process gas can enter the first space inevitably to cause the deposition on the back surface of the substrate. In another embodiment, a purge gas is introduced into a purge gas region at all times during the substrate processing, the purge gas region having a first higher pressure than a second pressure inside the first space. The purge gas can enter the first space through the gas holes 230 and flow out of the diversion trench 210, thereby removing heat from the periphery of the lift pin hole and reducing deposits in the first space. Through the cooperation of the air holes 230 and the guiding grooves 210, the process gas in the first space can be discharged more effectively, and the process gas in the first space is prevented from reacting and depositing on the back surface of the substrate, the substrate bearing surface 2052 and the bottom surface 2051 of the base at a high temperature. The utility model discloses a base 205 has not only improved substrate W's processingquality, the particulate pollutant in the reaction chamber that can also significantly reduce.

On the other hand, in the substrate processing process, when the process gas needs to be switched, the purge gas is introduced into the first space through the gas hole 230 and is discharged from the diversion groove 210, so that the old process gas (the process gas in the previous substrate processing process) in the first space can be quickly and effectively taken away, and the pollution of the new process gas and the old process gas generated by doping in the first space to the back surface of the substrate and the internal environment of the reaction chamber is prevented.

In a preferred embodiment, a plurality of air holes 230 (3 in fig. 7, by way of example and not by way of limitation) are provided around each lift pin hole 2054. Due to the small distance between the vent 230 and the lift pin hole 2054 (e.g., small distance between the vent 230 and the lift pin hole 2054)

) And thus can carry away heat from the lift pin hole 2054 by purge gas introduced from the gas holes 230. As shown in fig. 7, a plurality of air holes 230 corresponding to the lift pin holes 2054 are distributed between the lift pin holes 2054 and the corresponding guide grooves 210. Thus, purge gas introduced from the gas holes 230 can be discharged from the lift pin holes 2054 through the shortest path, thereby rapidly and effectively taking away heat around the lift pin holes and ensuring the uniformity of the surface temperature of the substrate.

In other embodiments, the gas holes 230 may be provided at other locations on the bottom surface 2051 of the base, and the gas holes 230 are not limited to being disposed around the lift pin holes to facilitate introduction of purge gas and to prevent deposits from forming in the first space.

The utility model also provides a chemical vapor deposition equipment contains a reaction chamber, be equipped with in the reaction chamber and have the utility model base 205 for bear substrate W.

The above description is only for the specific embodiments of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art can easily think of various equivalent modifications or replacements within the technical scope of the present invention, and these modifications or replacements should be covered within the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.

Claims (13)

1. A susceptor for a chemical vapor deposition apparatus, comprising: the base bottom surface is a plane or a downwards concave arc surface; the substrate bearing surface extends upwards and outwards from the outer edge of the bottom surface of the base, is an inclined surface inclining downwards from outside to inside, and is contacted with the outer edge of the substrate through the substrate bearing surface so as to bear the substrate; and the flow guide grooves are arranged on the substrate bearing surface and are used for discharging the process gas and/or the purified gas between the back surface of the substrate and the base.

2. The base of claim 1, further comprising: the base surface extends upwards and outwards from the outer edge of the substrate bearing surface, and the base surface is a plane.

3. The pedestal of claim 1, wherein the bottom surface of the pedestal is provided with a plurality of lift pin holes, and the plurality of guide grooves correspond to the plurality of lift pin holes respectively.

4. The pedestal of claim 1, wherein the plurality of flow guide grooves are uniformly distributed in a circumferential direction of the pedestal; the number of the diversion trenches is at least 3.

5. The pedestal of claim 1, wherein the flow guide groove is one or more of a U-shaped groove and a V-shaped groove.

6. The susceptor of claim 1, wherein the substrate bearing surface is inclined at an angle of 1 ° to 2 ° relative to a horizontal plane.

7. The susceptor of claim 3, wherein the lift pin hole has a plurality of air holes formed around the lift pin hole.

8. The susceptor of claim 7, wherein purge gas between the back surface of the substrate and the bottom surface of the susceptor is exhausted through the gas vent.

9. The pedestal of claim 7, wherein during processing, purge gas enters between the backside of the substrate and the bottom surface of the pedestal through the gas holes and is exhausted from the corresponding flow-guiding grooves.

10. The susceptor of claim 7, wherein the air holes are one or more of kidney-shaped through holes, in-line shaped through holes, and oval shaped through holes.

11. The susceptor of claim 7, wherein the plurality of gas holes corresponding to lift pin holes are distributed between the lift pin holes and the corresponding flow channels.

12. The susceptor of claim 7, wherein the total open surface area of all gas holes is between 1% and 5% of the area of the bottom surface of the susceptor.

13. A chemical vapor deposition apparatus comprising a reaction chamber, wherein the reaction chamber is provided with a susceptor according to any one of claims 1 to 12 for carrying a substrate.

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