CN215288964U - Wafer tray and chemical vapor deposition equipment - Google Patents
Wafer tray and chemical vapor deposition equipment Download PDFInfo
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- CN215288964U CN215288964U CN202120656072.7U CN202120656072U CN215288964U CN 215288964 U CN215288964 U CN 215288964U CN 202120656072 U CN202120656072 U CN 202120656072U CN 215288964 U CN215288964 U CN 215288964U
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Abstract
The utility model provides a wafer tray and chemical vapor deposition equipment, including the dish hole that is located the tray, be provided with support step and boss in the dish hole, wherein the height of the high more than or equal to tray of boss just to dish hole center extension, through set up the boss that corresponds with wafer breach department at dish hole lateral wall, the distance that makes wafer location breach department apart from dish hole lateral wall obtains reducing, the boss can play the effect that dish hole lateral wall extends, in order to form the irregular dish hole that is applicable to wafer edge profile, reach the purpose of adjusting wafer edge temperature distribution, be favorable to the homogeneity of wafer edge and bulk temperature, improve the thick uniformity of wafer chemical deposition's membrane.
Description
Technical Field
The utility model relates to a semiconductor processing technology field especially relates to a chemical vapor deposition equipment that is used for chemical vapor deposition equipment's tray and uses this tray.
Background
Forming thin films on wafers by different gas sources is an important step of semiconductor processes, including Chemical Vapor Deposition (CVD), Physical Vapor Deposition (PVD), and the like. The Metal Organic Chemical Vapor Deposition (MOCVD) is one of chemical vapor deposition, and during film formation, gases from different gas sources are generally input into a metal organic chemical deposition reaction chamber to be mixed, and then a heating device is used to control the temperature of a wafer to a temperature suitable for film formation, so that the reaction gases can perform a chemical reaction on the wafer.
The MOCVD device comprises a reaction cavity, wherein a tray for bearing wafers is arranged in the cavity, and a plurality of wafers are placed on the same tray in order to improve the deposition efficiency. The disk pits on the tray are circular pit positions with the diameter larger than that of the wafer. When a wafer is placed in a tray pocket, the notch in the wafer for positioning receives a different amount of heat radiation than the rest of the wafer edge, for example, when the notch in the wafer is a flat edge, resulting in a wider gap between the flat edge and the tray pocket sidewall, the flat edge being heated by less radiation from the tray pocket sidewall. As the graphite tray is heated in the process of process operation, the heating temperature exceeds 1000 ℃, and the graphite tray is radially far away from the center direction of the graphite tray in the tray pit, the temperature of the flat edge of the wafer is lower relative to the temperature of other side positions of the wafer due to the fact that more heat radiation or heat conduction heating cannot be obtained, so that the process result is different, and the process consistency of the whole wafer is influenced.
SUMMERY OF THE UTILITY MODEL
In order to solve the technical problem, the utility model provides a wafer tray for bear pending wafer, include:
a disc pit which is positioned on the tray and is circular in shape, wherein a plurality of supporting steps are arranged in the disc pit and used for placing the wafer;
the inner side wall of the disc pit is provided with a boss extending towards the circle center direction of the disc pit, the upper surface height of the boss is larger than that of the supporting step, and the boss is not in contact with the edge of the wafer.
Optionally, the wafer has a notch, and the boss position corresponds to the notch position.
Optionally, the notch is a flat edge, and the inner side surface of the boss is divided into a far portion far away from the flat edge and a near portion close to the flat edge.
Optionally, the length of the near part is 5-25 mm, and the distance between the near part and the flat edge is 0.2-2 mm.
Optionally, the boss extends along a diameter of the tray.
Optionally, the boss is trapezoidal.
Optionally, the notch is a flat edge, and the inner side surface of the boss is parallel to the flat edge.
Optionally, the notch is V-shaped, and the inner side surface of the boss is the same as the notch in shape.
Optionally, the distance between the inner side surface of the boss and the V-shaped surface of the notch is 0.2-2 mm.
Optionally, the number of the disc pits is 1 or more.
Optionally, the tray is a graphite tray.
Further, the utility model also provides a chemical vapor deposition equipment, include:
a reaction chamber for processing a semiconductor wafer;
the gas transmission device is used for inputting reaction gas into the reaction chamber;
and a wafer tray as described in any one of the above.
The utility model has the advantages that: the utility model provides a be applied to tray of vapor deposition reaction chamber, through set up the boss that corresponds with wafer breach department at a set of pit lateral wall, make wafer location breach department apart from the distance of a set of pit lateral wall obtain reducing, the boss can play the effect that a set of pit lateral wall extends to form the irregular dish hole that is applicable to wafer edge profile, reach the purpose of adjusting wafer edge temperature distribution, be favorable to the homogeneity of wafer edge and bulk temperature, improve wafer chemical deposition's the thick uniformity of membrane.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
FIG. 1A is a schematic view of a wafer tray in the prior art;
FIG. 1B is a side cross-sectional view of a tray well of a prior art tray;
fig. 2 is a top view of an embodiment of a tray of the present invention;
FIG. 2A is an enlarged view of the point A in FIG. 2;
FIG. 2B is a partial cross-sectional view of the tray at the boss;
FIG. 2C is a diagram of the relative dimension identifier shown in FIG. 2 after the wafer is placed therein;
FIG. 3 is a schematic view of another tray pit of the present invention;
FIG. 4 is a schematic view of a chemical vapor deposition chamber according to the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.
Fig. 1A illustrates a prior art tray 100 for a semiconductor device, which is an example of a tray 100 on which 8 wafers 110 can be placed, in a chemical vapor deposition process, after a reaction gas is introduced, in order to make the film thickness of each portion of the wafer 110 approximately the same size, the tray 100 needs to be rotated along a central axis, so that the wafer 110 is subjected to a centrifugal effect and slightly shifted away from the center of the tray 100. The wafer 110 needs to be positioned during the transportation process, and the prior art adopts a manner of providing a notch 111 at the edge of the wafer 110, which is a flat edge in fig. 1A, so that the notch 111 faces the same direction with respect to the center of the tray 100 as shown by the notch 111 provided outward in fig. 1A in consideration of the operation flow when the wafer 110 is placed, such as the rotation of the tray 100, and one wafer is placed each time.
As shown in fig. 1B, which is a cross-sectional enlarged view of the wafer 110 at the notch 111, because of the notch 111, when the wafer 110 is placed in the disk pit 101, a large gap is generated, and even if the wafer 110 is shifted toward the outer sidewall of the disk pit 101 under the influence of the centrifugal effect, there is a flat edge that is farther from the outer sidewall of the disk pit 101 than the edge of the wafer 110. The wafer immediately after the deposition process was observed using an infrared temperature measuring device, and the temperature at the notch 111 was found to be much lower than the temperature in the central region of the wafer. Thereby affecting the non-uniform growth of the deposition gas in the wafer gap 111 area and the central area.
Fig. 2 is a top view of the tray 200 according to an embodiment of the present invention. Including a plurality of circular disc pits 201 disposed on a circular tray 200, and 6 disc pits 201 are shown in fig. 3, and in other embodiments, other numbers and arrangements of disc pits are possible, such as 8 disc pits along a circle concentric with the tray 200, or a different number of disc pits arranged along a circle concentric with the tray 200, or a single disc pit disposed concentrically with the tray 200. In the disk pit 201 of the present example, the inner sidewall of the disk pit 201 is provided with a boss extending toward the center of the disk pit 201, the position of the boss depends on the position of the wafer notch, in this embodiment, the wafer notch is away from the center of the tray 200, and the boss is also disposed in the disk pit 201 in the direction away from the center of the tray 200.
Fig. 2A is an enlarged view of a position a in fig. 2, a plurality of supporting steps 203 are further disposed in the tray pit 201, an upper surface of the supporting step 203 is lower than an upper surface of the tray 200, so as to avoid an effect of an excessive height on a limiting effect of the tray pit 201 on the wafer, the supporting step 203 has a bearing area as small as possible to reduce a temperature disturbance to a local area of the back surface of the wafer, and the supporting steps 203 may be uniformly or non-uniformly distributed on an inner side wall of the tray pit 201. In fig. 2B, the height of the upper surface of the boss 202 is greater than the height of the upper surface of the supporting step 203, so that the inner side wall of the boss 202 can be aligned with the side portion of the notch, and further, the heat of the boss 202 is directly radiated to the notch area, so as to realize temperature adjustment of the notch of the wafer, and the distance that the boss extends inward can be reduced by adjusting the distance that the boss 202 is higher than the upper surface of the supporting step 203, so as to realize constancy of total heat conduction to the wafer. And adjusting the thermal uniformity at the notch of the wafer by utilizing two parameters of the height of the boss and the inward extension distance of the boss. In the embodiment of fig. 2A, the height of the upper surface of the boss 202 is the same as that of the upper surface of the tray 200, so as to simulate the heat conduction environment between the wafer edge and the tray pit 201 at other positions, which is equivalent to the extension of the inner sidewall of the tray pit 201, that is, in some embodiments, the boss 202 and the sidewall of the tray pit 201 may be integrally disposed, and the distance between the boss and the wafer notch is adjusted to compensate the temperature at the notch, thereby achieving the purpose of uniform heating of the wafer edge.
As shown in fig. 2C, when the wafer 210 is placed in the tray pit 201, in the embodiment, the boss 202 has the same height as the tray 200 when the notch of the wafer is the flat side 211, and the inner side surface of the boss 202 includes a far portion 2022 far away from the flat side 211 and a near portion 2021 near the flat side 211, the boss 202 may be regarded as an isosceles trapezoid, the far portion 2022 is two sides of the isosceles trapezoid, and the near portion 2021 is a short side of the isosceles trapezoid and is parallel to the flat side 211. When the flat edge 211 of the wafer 210 contacts the disk well, both ends of the flat edge 211 contact the sidewalls of the disk well, thereby defining the position of the wafer 210. At this time, the length of the proximal portion is L, and the distance from the proximal portion to the flat side 211 is D. In some embodiments, the length L can be adjusted to be 5-25 mm and the distance D can be adjusted to be 0.2-2 mm for 2 inches, 4 inches, and 6 inches of the wafer, thereby achieving the best temperature adjustment effect. If the value of L is larger than 25mm, the boss is too close to two ends of the flat edge 211, two ends of the flat edge 211 are already contacted with the side wall of the disc pit, and the heat radiation of the near part 2022 is received at the moment, so that the temperature is too high, and the heat uniformity at two ends is damaged. The value of L is less than 5mm, and the thermal compensation of the flat edge central area is not enough; if the distance D is less than 0.2mm, the flat edge of the wafer 210 may contact with the flat edge when being heated and expanded, which may cause the temperature of the contact point to be too high, and if the distance D is greater than 2mm, the adjustment effect may not be achieved. In the case where the notch is a flat side, only the middle region of the flat side 211 is farthest from the side wall of the disc pit 201, resulting in the lowest temperature, and the regions on both sides of the flat side 211 are closer to the side wall of the disc pit, so that there is no need to separately perform temperature compensation, so in the present embodiment, the boss 202 is disposed at a position directly opposite to the middle region of the flat side 211, and excessive heating of the regions on both sides of the flat side 211 is weakened by the far portion of the boss 202.
As shown in fig. 3, another embodiment of the present invention is different from the other embodiments in that the notch of the wafer 310 is a V-shaped opening 311, the shape and contour of the corresponding boss 302 are the same as the V-shaped opening 311, for example, the boss 302 can be regarded as a triangle, the distance between the inner sidewall of the boss 302 and the V-shaped opening 311 is in the range of 0.2 to 2mm, and the equivalent distance between the other region of the edge of the wafer 310 and the inner sidewall of the disk pit is used to realize the uniform heat radiation of the disk pit sidewall to the wafer 310.
As shown in fig. 4, the utility model provides a pair of metal organic chemical vapor deposition device sketch map, including reaction chamber 420, set up in the gas transmission device 430 at reaction chamber 420 top for to the required various gases of gas shower 431 transport deposit, flow to the tray 400 that sets up under gas shower 431 after gas shower 431 carries out the even flow and handles, be provided with a plurality of dish hole on the tray 400, be provided with the boss as in the above-mentioned embodiment in the dish hole. The tray 400 rotates around its central axis, and the bosses are disposed in the diameter direction of the tray 400 to improve the thermal symmetry of each wafer, in some embodiments, the bosses are disposed at positions away from the center of the tray, and in other embodiments, the bosses are disposed at positions close to the center of the tray. In the MOCVD apparatus in the present embodiment, a heating device for heating the tray and a gas exhaust device located at the bottom of the reaction chamber 420 are further included.
The utility model has the advantages that: the utility model provides a be applied to tray of vapor deposition reaction chamber, through set up the boss that corresponds with wafer breach department at a set of pit lateral wall, make wafer location breach department apart from the distance of a set of pit lateral wall obtain reducing, the boss can play the effect that a set of pit lateral wall extends to form the irregular dish hole that is applicable to wafer edge profile, reach the purpose of adjusting wafer edge temperature distribution, be favorable to the homogeneity of wafer edge and bulk temperature, improve wafer chemical deposition's the thick uniformity of membrane.
The utility model discloses a wafer tray is not limited to and is applied to above-mentioned MOCVD device, also can be suitable for in other chemical deposition device, and here is no longer repeated.
While the present invention has been described in detail with reference to the preferred embodiments thereof, it should be understood that the above description should not be taken as limiting the present invention. Numerous modifications and alterations to the present invention will become apparent to those skilled in the art upon reading the foregoing description. Accordingly, the scope of the invention should be limited only by the attached claims.
Claims (12)
1. A wafer tray for carrying wafers to be processed, comprising:
a disc pit which is positioned on the tray and is circular in shape, wherein a plurality of supporting steps are arranged in the disc pit and used for placing the wafer;
the inner side wall of the disc pit is provided with a boss extending towards the circle center direction of the disc pit, the upper surface height of the boss is larger than that of the supporting step, and the boss is not in contact with the edge of the wafer.
2. The wafer tray of claim 1, wherein the wafer has a notch, and the boss position corresponds to the notch position.
3. The wafer tray of claim 2, wherein the notch is a flat edge and the inner side surface of the boss is divided into a distal portion distal from the flat edge and a proximal portion proximal to the flat edge.
4. A wafer tray according to claim 3 wherein the proximal portion has a length of 5 to 25mm and is spaced from the flat edge by a distance of 0.2 to 2 mm.
5. A wafer tray according to claim 4 wherein the bosses extend diametrically of the tray.
6. A wafer tray according to claim 3 wherein the bosses are trapezoidal.
7. The wafer tray of claim 2, wherein the notch is a flat edge, and an inner side surface of the boss is parallel to the flat edge.
8. The wafer tray of claim 2, wherein the notch is V-shaped, and an inner side surface of the boss is the same shape as the notch.
9. The wafer tray of claim 8, wherein the distance between the inner side surface of the boss and the V-shaped surface of the notch is 0.2-2 mm.
10. A wafer tray according to claim 1 wherein the number of disk wells is 1 or greater.
11. A wafer tray according to claim 1 wherein the tray is a graphite tray.
12. A chemical vapor deposition apparatus, comprising:
a reaction chamber for processing a semiconductor wafer;
the gas transmission device is used for inputting reaction gas into the reaction chamber;
and, a wafer tray as claimed in any one of claims 1 to 11.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202120656072.7U CN215288964U (en) | 2021-03-31 | 2021-03-31 | Wafer tray and chemical vapor deposition equipment |
| TW111201943U TWM632542U (en) | 2021-03-31 | 2022-02-25 | Wafer tray and chemical vapor deposition equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202120656072.7U CN215288964U (en) | 2021-03-31 | 2021-03-31 | Wafer tray and chemical vapor deposition equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN215288964U true CN215288964U (en) | 2021-12-24 |
Family
ID=79535284
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202120656072.7U Active CN215288964U (en) | 2021-03-31 | 2021-03-31 | Wafer tray and chemical vapor deposition equipment |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN215288964U (en) |
| TW (1) | TWM632542U (en) |
-
2021
- 2021-03-31 CN CN202120656072.7U patent/CN215288964U/en active Active
-
2022
- 2022-02-25 TW TW111201943U patent/TWM632542U/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| TWM632542U (en) | 2022-10-01 |
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