CN114318290A - Method and device for preparing focusing ring for semiconductor equipment - Google Patents
Method and device for preparing focusing ring for semiconductor equipment Download PDFInfo
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- CN114318290A CN114318290A CN202210002396.8A CN202210002396A CN114318290A CN 114318290 A CN114318290 A CN 114318290A CN 202210002396 A CN202210002396 A CN 202210002396A CN 114318290 A CN114318290 A CN 114318290A
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Abstract
The invention relates to a method and a device for preparing a focusing ring for semiconductor equipment, wherein the preparation method comprises the following steps: preparing a deposition device, and placing the deposition device in a chemical vapor deposition furnace; step two: heating the chemical vapor deposition furnace to 950-; step three: separating the deposited solid silicon carbide focusing ring from a deposition device; step four: polishing, the surface of the focusing ring is polished to obtain the focusing ring with higher purity, low porosity and uniform particle size, so that the focusing ring has higher quality, the service life of the focusing ring is prolonged, the problem that etching equipment frequently replaces the focusing ring is effectively solved, and the production efficiency is improved.
Description
Technical Field
The invention belongs to the field of semiconductor device manufacturing, and particularly relates to a method and a device for preparing a focusing ring for semiconductor equipment.
Background
With the development of smaller size of semiconductor devices, the number of transistors at the edge of a wafer is more and more, the requirement for optimizing the etching process at the edge of the wafer is higher and higher, and it is important to maintain a uniform etching rate from the surface of the wafer to the near edge. To increase the uniformity of the etch, a focus ring is used around the wafer to make the plasma more uniform across the wafer area by spreading the plasma over the wafer edge to the focus ring. However, during the etching process, the focus ring is continuously etched and eroded due to the exposure of the focus ring to the high-energy active ions, resulting in frequent replacement cycles of the focus ring and also adversely affecting the processing of the wafer. In the prior art, the preparation method of the focusing ring comprises a reaction sintering method and a plasma spraying method, wherein the focusing ring obtained by the reaction sintering method has many air holes, contains a large amount of impurities and remains excessive Si or C; the focusing ring prepared by the plasma spraying method has high surface roughness, large pores and short service life; the focus ring prepared by the above two methods is poor in quality and needs to be frequently replaced during use.
Disclosure of Invention
In view of the above, an object of the present invention is to provide a method for manufacturing a focus ring for a semiconductor device, so as to solve the technical problems that the quality of the focus ring manufactured in the prior art is poor and the focus ring needs to be frequently replaced during use; in addition, the invention also provides a preparation device of the focusing ring for the semiconductor equipment.
In order to achieve the above object, the technical solution adopted by the method for manufacturing a focus ring for a semiconductor device of the present invention is:
a method for preparing a focus ring for a semiconductor device, comprising the steps of:
the method comprises the following steps: preparing a deposition device, and placing the deposition device in a chemical vapor deposition furnace;
step two: heating the chemical vapor deposition furnace to 950-;
step three: separating the deposited solid silicon carbide focusing ring from a deposition device;
step four: polishing, namely grinding and polishing the surface of the focusing ring.
Has the advantages that: the focusing ring for the semiconductor equipment is prepared by adopting a vapor deposition method, and then the focusing ring and a deposition device are separated and polished to prepare the focusing ring with higher purity, low porosity and uniform particle size, so that the focusing ring has higher quality, the service life of the focusing ring is prolonged, the problem that the focusing ring is frequently replaced by etching equipment is effectively solved, and the production efficiency is improved.
And further, the third step comprises the steps of firstly carrying out primary separation on the silicon focusing ring and the deposition device through machining, then slowly oxidizing the focusing ring, and slowly oxidizing the focusing ring at the temperature of 400-500 ℃ to remove surface residues.
Has the advantages that: firstly, preliminarily separating the focusing ring from the deposition device through machining, and ensuring the separation speed of the focusing ring from the deposition device; and the residues on the surface of the focusing ring are removed by slow oxidation, so that the shape of the focusing ring can be ensured to be more complete.
Further, a fifth step is included after the fourth step, specifically,
step five: surface acid cleaning and purifying, namely putting the focusing ring into 5-10 mol/L sulfuric acid solution for boiling, removing impurities on the surface of the focusing ring, and ultrasonically cleaning by using ethanol or acetone to remove acid residues;
step six: high temperature treatment, placing the focusing ring in the environment of flowing argon gas at 1000-1500 ℃ for further purification.
Has the advantages that: the manufactured focusing ring has high quality.
In the second step, hydrogen (H) is controlled according to the production schedule2) Gas flow rate of H2The initial flow rate was 20 standard liters/minute, followed by a gradual decrease in hydrogen flow rate.
Has the advantages that: the flow of the hydrogen is controlled so as to ensure that the silicon carbide focusing ring has higher growth speed.
In the third step, the specific steps of machining include machining and cutting off the redundant parts of the upper surface, the lower surface, the inner circumference and the outer circumference of the focusing ring.
Has the advantages that: the shape of the prepared silicon carbide focusing ring is ensured to be more complete.
The technical scheme adopted by the preparation device of the focusing ring for the semiconductor equipment is as follows:
a device for preparing a focus ring for a semiconductor apparatus includes a deposition device,
the deposition device comprises a deposition shell and a gas distribution device, and the deposition shell is detachably connected with the gas distribution device;
the deposition shell comprises a top plate and a side wall which is arranged in the circumferential direction of the top plate and extends downwards, an exhaust grille is arranged on the side wall, a cylindrical ring platform is arranged in the middle of the lower surface of the top plate, and the cylindrical ring platform is used for depositing a focusing ring;
the gas distribution device comprises a shell with an upward opening, the shell comprises a bottom wall and a side plate which is arranged in the circumferential direction of the bottom wall and extends upwards, and an inner cavity of the gas distribution device is defined by the side plate and the bottom wall;
the projection shape of the side plate of the gas distribution device in the vertical direction is the same as the projection shape of the side wall of the deposition shell in the vertical direction;
the bottom wall of the air distribution device is provided with an air inlet;
an air distribution disc is arranged in the inner cavity of the air distribution device, and air distribution holes which penetrate through the air distribution disc up and down are formed in the air distribution disc.
Has the advantages that: the preparation device of the focusing ring for the semiconductor equipment comprises a deposition shell and a gas distribution device, wherein the deposition shell and the gas distribution device are detachably connected to form a whole body with a hollow interior, the bottom wall of the gas distribution device is provided with a gas inlet, the side wall of the deposition device is provided with an exhaust grille, the middle part of the lower surface of the top plate of the deposition device is provided with a cylindrical ring platform, and thus, the preparation device is placed in a vapor deposition furnace, and Methyl Trichlorosilane (MTS) and hydrogen (H) in the vapor deposition furnace are2) The mixed gas enters the preparation device from the gas inlet, and after the gas forms the solid silicon carbide focusing ring at the cylindrical ring platform, the residual gas is discharged from the exhaust grilleAnd the device is reasonable in layout, and can form a focusing ring with higher purity, low porosity and uniform particle size, thereby providing a foundation.
Furthermore, the deposition shell is a hollow cylindrical shell formed by a top plate and a side wall, the gas distribution device shell is a hollow cylindrical shell formed by a bottom wall and a side plate, an annular groove is formed in the upper surface of the side plate of the gas distribution device, and the side wall of the deposition shell is clamped in the annular groove.
Has the advantages that: the deposition shell and the gas distribution device are convenient to produce and manufacture; the deposition shell and the gas distribution device can be conveniently mounted and dismounted.
The inner cavity of the gas distribution device is in an inverted cone shape, a plurality of annular step type supporting surfaces which are arranged at intervals up and down are arranged on the inner wall surface of a side plate of the gas distribution device, the gas distribution disc is a circular gas distribution disc matched with the annular step type supporting surfaces, and the gas distribution disc is supported on the annular step type supporting surfaces.
Has the advantages that: the inner cavity of the gas distribution device is in an inverted cone shape, and the Methyl Trichlorosilane (MTS) and hydrogen (H) are2) After the mixed gas enters the gas distribution device from the gas inlet, the inverted cone-shaped inner cavity facilitates the mixed gas to diffuse when moving upwards, so that the mixed gas can be deposited around the cylindrical ring platform after being diffused, and a solid silicon carbide focusing ring is formed.
Furthermore, the air distribution holes are strip-shaped air inlet grids, and the air inlet grids on the two adjacent air distribution disks are arranged in a staggered mode.
Has the advantages that: after the mixed gas enters the gas distribution device from the gas inlet, the mixed gas is distributed more uniformly in the gas distribution device through the staggered gas inlet grids, so that a focusing ring with higher purity, low porosity and uniform particle size is formed more favorably.
The lower surface of the cylindrical ring table is positioned above the lower surface of the side wall of the deposition shell, and the exhaust grille is provided with a plurality of layers at intervals in the vertical direction; the width of the exhaust grille is gradually increased from top to bottom layer by layer.
Has the advantages that: firstly, the phenomenon that the discharge of redundant reaction gas is influenced after solid silicon carbide is deposited around the cylindrical ring table is avoided; second, as the growth thickness of the focus ring increases, the upper narrow exhaust grill is covered, and the lower wide exhaust grill still ensures rapid exhaust of the reaction gas.
Drawings
FIG. 1 is a schematic view showing the structure of an apparatus for manufacturing a focus ring for a semiconductor device according to the present invention;
FIG. 2 is a sectional view of an apparatus for manufacturing a focus ring for a semiconductor device in FIG. 1;
FIG. 3 is a schematic view showing a structure of a deposition casing of the apparatus for manufacturing a focus ring for a semiconductor device of FIG. 1;
fig. 4 is a bottom view of a deposition casing of the apparatus for preparing a focus ring for a semiconductor device of fig. 1.
Reference numerals: 1-a deposition housing; 2-air distribution device; 3-an exhaust grille; 4-cylindrical ring table; 5-air distribution plate; 6-step type supporting surface; 7-an air inlet; 8-an air inlet grille; 9-annular groove.
Detailed Description
The method and apparatus for manufacturing a focus ring for a semiconductor device according to the present invention will be described in detail with reference to the accompanying drawings and embodiments:
a method for preparing a focus ring for a semiconductor device, comprising the steps of:
the method comprises the following steps: and preparing a deposition device, and placing the deposition device in a chemical vapor deposition furnace, wherein the deposition device is provided with an air inlet and an exhaust grille which are communicated with the chemical vapor deposition furnace.
Step two: heating the chemical vapor deposition furnace to 950-2) Mixed gas of (2), Methyl Trichlorosilane (MTS) and hydrogen (H) are adjusted2) In this example, Methyltrichlorosilane (MTS) and hydrogen (H)2) In a molar ratio of 2: 20, other examples, Methyltrichlorosilane (MTS) and hydrogen (H)2) The molar ratio of (a) to (b) may also be 1: 50; the mixed gas in the vapor deposition furnace enters the deposition device from the gas inlet and then enters the deposition deviceAnd discharging the silicon carbide from the exhaust grille and forming a solid silicon carbide focusing ring in the deposition device through chemical vapor deposition.
Controlling hydrogen (H) according to the preparation process while introducing the mixed gas2) Gas flow rate of H2The initial flow rate was 20 standard liters/minute, followed by a gradual decrease in hydrogen flow rate.
Step three: machining, namely primarily separating the deposited solid silicon carbide focusing ring from the deposition device through machining; the machining process includes cutting the excessive parts of the upper and lower surfaces, inner and outer circumferences of the focusing ring.
Step four: and (3) slowly oxidizing, namely slowly oxidizing the primarily processed focusing ring at the temperature of 400-500 ℃ to remove surface residues.
Step five: polishing, namely grinding and polishing the surface of the focusing ring.
Step six: surface acid cleaning and purifying, boiling the focusing ring in 5-10 mol/L sulfuric acid solution to remove impurities on the surface of the focusing ring, and ultrasonically cleaning with ethanol or acetone to remove acid residues.
Step seven: high temperature treatment, placing the focusing ring in the environment of flowing argon gas at 1000-1500 ℃ for further purification.
The solid silicon carbide focusing ring is prepared by the chemical vapor deposition method, and the focusing ring with higher purity, low porosity and uniform particle size is prepared by machining, slow oxidation, polishing, surface acid elution purification and high-temperature treatment, so that the focusing ring has higher quality, the service life of the focusing ring is prolonged, the problem that etching equipment frequently changes the focusing ring is effectively avoided, and the production efficiency is improved.
A preparation device of a focusing ring for semiconductor equipment comprises a deposition device, as shown in figures 1 and 2, the deposition device comprises a deposition shell 1 and a gas distribution device 2, and the deposition shell 1 is detachably connected with the gas distribution device 2.
In this embodiment, the deposition casing 1 includes the roof, set up at roof circumference and downwardly extending's lateral wall, and the equidistant exhaust grille 3 of having seted up a plurality of and being stratiform and arranging from top to bottom of lateral wall, and the lower surface middle part of roof is provided with cylindric ring platform 4, and cylindric ring platform 4 is used for the deposit focus ring. In the present embodiment, the material of the deposition case 1 is high-purity graphite.
The projection shape of the side plate of the gas distribution device 2 in the up-down direction is the same as the projection shape of the side wall of the deposition shell 1 in the up-down direction, in the embodiment, the deposition shell 1 is a hollow cylindrical shell formed by a top plate and a side wall, and the shell of the gas distribution device 2 is a hollow cylindrical shell formed by a bottom wall and a side plate, so that the production and the manufacture of the deposition shell 1 and the gas distribution device 2 are facilitated.
The inner cavity of the gas distribution device 2 is in an inverted cone shape, and the arrangement of the inverted cone-shaped inner cavity is convenient for Methyl Trichlorosilane (MTS) and hydrogen (H)2) The mixed gas enters the gas distribution device 2 from the gas inlet 7 and then diffuses while moving upward.
Be provided with gas distribution dish 5 in the 2 inner chambers of gas distribution device, set up the gas distribution hole that runs through from top to bottom on the gas distribution dish 5, in this embodiment, be provided with a plurality of annular step holding surface 6 that interval set up from top to bottom on the internal face of the curb plate of gas distribution device 2, gas distribution dish 5 is the circular gas distribution dish 5 with annular step holding surface 6 looks adaptation, and gas distribution dish 5 supports on annular step holding surface 6. The inverted cone-shaped inner cavity also facilitates the installation of the gas distribution plate 5.
The gas distribution hole on the gas distribution disc 5 is a strip-shaped gas inlet grid 8, and the gas inlet grids 8 on the two adjacent layers of gas distribution discs 5 are arranged in a staggered manner, so that mixed gas enters the gas distribution device 2 from the gas inlet 7, and the gas distribution of the gas inlet grids 8 arranged in the up-down direction in a staggered manner can ensure that the gas flow of the mixed gas is uniformly distributed in the gas distribution device 2, so that the mixed gas can form a solid silicon carbide focusing ring around the cylindrical ring table 4 when passing through the cylindrical ring table 4.
In this embodiment, as shown in fig. 3 and 4, the lower surface of the cylindrical ring table 4 is located above the lower surface of the sidewall of the deposition casing 1, specifically, the height of the cylindrical ring table 4 is generally 1-2 times the height of the focus ring, so that after the solid silicon carbide is deposited around the cylindrical ring table 4, the exhaust grille 3 located below the sidewall of the deposition casing 1 can allow the excess reaction gas to be exhausted from the deposition apparatus, so that the cylindrical ring table 4 does not cause great interference to the gas flow. The exhaust grids 3 are arranged on the side wall of the deposition shell 1 at intervals along the vertical direction, and the exhaust grids 3 are gradually increased from top to bottom layer by layer in width, so that the narrower exhaust grids 3 on the upper layer can be covered along with the increase of the growth thickness of the focusing ring, and the wider exhaust grids 3 on the lower layer can still ensure the rapid discharge of reaction gas.
When the preparation device of the focusing ring for the semiconductor equipment is used, the preparation device is placed in a chemical vapor deposition furnace, and Methyl Trichlorosilane (MTS) and hydrogen (H) in the chemical vapor deposition furnace2) The mist from the air inlet 7 entering of gas distribution device 2, the inverted cone shape structure of gas distribution device 2 to and the gas distribution dish 5 that sets up at upper and lower direction interval, 8 staggered arrangements of air inlet grille on two adjacent layers of gas distribution dishes 5, can guarantee that the mist carries out intensive mixing in gas distribution device 2 after getting into gas distribution device 2, thereby make the mist form solid-state carborundum focus ring around cylindric ring platform 4 when upwards passing through cylindric ring platform 4, focus ringIs equal to the diameter of the cylindrical ring table 4. And the prepared focusing ring has high purity, low porosity and uniform particle size.
In the above-mentioned embodiment, H2Initial flow rate of 20 standard liters per minute, in other embodiments, H2The initial flow rate may also float around a rate of 20 standard liters per minute.
In the above embodiment, the deposition casing is a hollow cylindrical casing formed by a top plate and a side plate, and the gas distribution device casing is a hollow cylindrical casing formed by a bottom wall and a side plate; in other embodiments, the deposition housing is a hollow rectangular housing formed by a top plate and side plates, and the gas distribution device is a hollow rectangular housing formed by a bottom wall and side plates.
In the above embodiment, the upper surface of the side plate of the gas distribution device is provided with an annular groove, and the side wall of the deposition shell is clamped in the annular groove; in other embodiments, the upper surface of the side plate of the gas distribution device is provided with an annular stepped supporting surface, and the deposition shell is placed on the annular stepped supporting surface of the gas distribution device.
In the above embodiment, the inner cavity of the gas distribution device is in the shape of an inverted cone; in other embodiments, the inner cavity of the gas distribution device is cylindrical.
In the above embodiments, the inner wall surface of the side plate of the gas distribution device is provided with a plurality of annular stepped support surfaces arranged at intervals up and down, and in other embodiments, the inner wall surface of the side plate of the gas distribution device is provided with a plurality of support structures arranged at intervals up and down, and the support structures are support blocks protruding inwards out of the side plate.
In the above embodiment, the air distribution holes are strip-shaped air inlet grids, and the air inlet grids on two adjacent air distribution disks are arranged in a staggered manner; in other embodiments, the air distribution holes can also be circular holes, and at the moment, the circular air inlet holes on the two adjacent air distribution discs are arranged in a staggered mode.
In the above embodiment, the lower surface of the cylindrical ring table is located above the lower surface of the sidewall of the deposition casing, and the exhaust grille is provided with a plurality of layers at intervals in the up-down direction; in other embodiments, the lower surface of the cylindrical ring table is at the same height as the lower surface of the sidewall of the deposition housing.
In the above embodiment, the width of the exhaust grille increases gradually from top to bottom layer by layer; in other embodiments, the widths of the exhaust grilles are equal in the up-down direction;
in the embodiment, the third step includes performing preliminary separation on the silicon focus ring and the deposition device through machining, then performing slow oxidation on the focus ring, and during the slow oxidation, placing the focus ring in a temperature environment of 400-500 ℃ for slow oxidation to remove surface residues; in other embodiments, the focus ring may be removed from the deposition apparatus by machining only (physical removal) or by slow oxidation only (chemical oxidation removal).
In the above embodiments, the air inlet is an inverted cone structure, and in other embodiments, the air inlet hole may also be a cylindrical structure.
In the above embodiment, the method includes the following steps: surface acid cleaning and purifying, namely putting the focusing ring into 5-10 mol/L sulfuric acid solution for boiling, removing impurities on the surface of the focusing ring, and ultrasonically cleaning by using ethanol or acetone to remove acid residues; step six: high temperature treatment, placing the focusing ring in the environment of flowing argon at 1000-1500 ℃ for further purification; in other embodiments, under the condition that the single slow oxidation is selected in step three, only step five: surface acid cleaning and purifying, namely putting the focusing ring into 5-10 mol/L sulfuric acid solution for boiling, removing impurities on the surface of the focusing ring, and ultrasonically cleaning by using ethanol or acetone to remove acid residues; or only step six: high temperature treatment, placing the focusing ring in the environment of flowing argon gas at 1000-1500 ℃ for further purification.
Claims (10)
1. A method for preparing a focus ring for a semiconductor device, comprising the steps of:
the method comprises the following steps: preparing a deposition device, and placing the deposition device in a chemical vapor deposition furnace;
step two: heating the chemical vapor deposition furnace to 950-Chlorosilane (MTS) and hydrogen (H)2) Mixed gas of (2), Methyl Trichlorosilane (MTS) and hydrogen (H) are adjusted2) Preparing a solid silicon carbide focusing ring by a chemical vapor deposition method according to the molar ratio of (1);
step three: separating the deposited solid silicon carbide focusing ring from a deposition device;
step four: polishing, namely grinding and polishing the surface of the focusing ring.
2. The method as claimed in claim 1, wherein the third step comprises performing a preliminary separation of the silicon focus ring from the deposition device by machining, and then performing a slow oxidation of the focus ring, wherein the focus ring is slowly oxidized at a temperature of 400-500 ℃ to remove surface residues.
3. The method for manufacturing a focus ring for a semiconductor device as claimed in claim 2, further comprising a fifth step after the fourth step, specifically,
step five: surface acid cleaning and purifying, namely putting the focusing ring into 5-10 mol/L sulfuric acid solution for boiling, removing impurities on the surface of the focusing ring, and ultrasonically cleaning by using ethanol or acetone to remove acid residues;
step six: high temperature treatment, placing the focusing ring in the environment of flowing argon gas at 1000-1500 ℃ for further purification.
4. The method for manufacturing a focus ring for semiconductor devices as claimed in any one of claims 1 to 3, wherein in the second step, the hydrogen gas (H) is controlled according to the manufacturing process2) Gas flow rate of H2The initial flow rate was 20 standard liters/minute, followed by a gradual decrease in hydrogen flow rate.
5. The method as claimed in claim 2 or 3, wherein the machining step comprises cutting off the upper and lower surfaces and the excess portions of the inner and outer circumferences of the focus ring.
6. A device for preparing a focusing ring for semiconductor equipment is characterized by comprising a deposition device,
the deposition device comprises a deposition shell and a gas distribution device, and the deposition shell is detachably connected with the gas distribution device;
the deposition shell comprises a top plate and a side wall which is arranged in the circumferential direction of the top plate and extends downwards, an exhaust grille is arranged on the side wall, a cylindrical ring platform is arranged in the middle of the lower surface of the top plate, and the cylindrical ring platform is used for depositing a focusing ring;
the gas distribution device comprises a shell with an upward opening, the shell comprises a bottom wall and a side plate which is arranged in the circumferential direction of the bottom wall and extends upwards, and an inner cavity of the gas distribution device is defined by the side plate and the bottom wall;
the projection shape of the side plate of the gas distribution device in the vertical direction is the same as the projection shape of the side wall of the deposition shell in the vertical direction;
the bottom wall of the air distribution device is provided with an air inlet;
an air distribution disc is arranged in the inner cavity of the air distribution device, and air distribution holes which penetrate through the air distribution disc up and down are formed in the air distribution disc.
7. The apparatus of claim 6, wherein the deposition housing is a hollow cylindrical housing formed by a top plate and a side plate, and the gas distributor housing is a hollow cylindrical housing formed by a bottom plate and a side plate; the upper surface of the side plate of the gas distribution device is provided with an annular groove, and the side wall of the deposition shell is clamped in the annular groove.
8. The manufacturing apparatus of the focus ring for semiconductor device as defined in claim 7, wherein the inner cavity of the gas distributor is in the shape of an inverted cone, the inner wall surface of the side plate of the gas distributor is provided with a plurality of annular stepped support surfaces spaced up and down, the gas distributor is a circular gas distributor matching the annular stepped support surfaces, and the gas distributor is supported on the annular stepped support surfaces.
9. The manufacturing apparatus of the focusing ring for semiconductor device as claimed in claim 8, wherein the air distribution holes are elongated air inlet grids, and the air inlet grids of two adjacent air distribution disks are staggered.
10. The apparatus as claimed in any one of claims 6 to 9, wherein the lower surface of the cylindrical ring stage is located above the lower surface of the sidewall of the deposition housing, the exhaust grille is arranged in a plurality of layers at intervals in an up-down direction, and the width of the exhaust grille increases from top to bottom layer by layer.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN116621180A (en) * | 2023-05-23 | 2023-08-22 | 河南硅烷科技发展股份有限公司 | System for preparing electronic grade polycrystalline silicon wettability regulation and control for low internal stress zone melting |
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| JP2019112241A (en) * | 2017-12-21 | 2019-07-11 | 國家中山科學研究院 | Silicon carbide growth apparatus with specific shape |
| CN110965042A (en) * | 2019-12-03 | 2020-04-07 | 巩义市泛锐熠辉复合材料有限公司 | Preparation method of gradient SiC coating |
| US20210134565A1 (en) * | 2019-10-30 | 2021-05-06 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor process chamber with heat pipe |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN103539122A (en) * | 2013-10-12 | 2014-01-29 | 台州市一能科技有限公司 | Silicon carbide preparation method |
| JP2019112241A (en) * | 2017-12-21 | 2019-07-11 | 國家中山科學研究院 | Silicon carbide growth apparatus with specific shape |
| US20210134565A1 (en) * | 2019-10-30 | 2021-05-06 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor process chamber with heat pipe |
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| CN116621180A (en) * | 2023-05-23 | 2023-08-22 | 河南硅烷科技发展股份有限公司 | System for preparing electronic grade polycrystalline silicon wettability regulation and control for low internal stress zone melting |
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