TWI626730B - Method of manufacturing epitaxial wafer - Google Patents

Abstract

A method of fabricating an epitaxial wafer using an epitaxial reactor, the epitaxial reactor comprising a chamber having a gas inlet and a gas outlet, comprising the steps of: cleaning the chamber to remove contaminants from the chamber, performing inert idle to stop the epitaxial reactor a power supply, and performing a virtual run to deposit an epitaxial layer on at least one dummy wafer, wherein the cleaning comprises: baking, wherein an internal temperature of the chamber is maintained at 1150 to 1200 ° C, etching, wherein an etching gas is supplied to the chamber and passed The gas outlet is discharged, and finally discharged, wherein an internal temperature of the chamber is maintained at 700 to 800 ° C while a hydrogen gas or an inert gas is supplied to the chamber and discharged through the gas outlet.

Description

Epitaxial wafer manufacturing method

The present invention relates to a method of fabricating an epitaxial wafer.

A germanium wafer widely used as a material for fabricating a semiconductor device is referred to as a crystalline germanium thin plate formed of polycrystalline germanium as a raw material.

According to the processing method, the germanium wafer can be divided into a polished wafer, an epitaxial wafer, an insulator upper germanium wafer (SOI wafer), a diffusion wafer, and a hydrogen annealing wafer (HI wafer).

A wafer comprising a crystal layer grown on an original germanium wafer is referred to as an epitaxial wafer. Epitaxial wafers have fewer surface defects than the original germanium wafer, and various concentrations or types of impurities are controllable.

Accordingly, the present invention is directed to a method of fabricating an epitaxial wafer that overcomes one or more of the problems due to the limitations and disadvantages of the prior art.

An aspect of the present invention is to provide a method of manufacturing an epitaxial wafer capable of preventing defects.

Other advantages, objects, and features of the invention will be set forth in part in the description which follows, It is understood or can be derived from the practice of the invention. The objectives and other advantages of the invention will be realized and attained by the <RTI

In order to achieve these and other features of the present invention, the present invention is embodied and broadly described. A method of fabricating an epitaxial wafer using an epitaxial reactor of the present invention, the epitaxial reactor comprising a chamber having a gas inlet and a gas outlet a chamber comprising the steps of: cleaning a chamber to remove contaminants from the chamber, performing inert idle to stop power to the epitaxial reactor, and performing a virtual run to deposit an epitaxial layer on at least one dummy wafer, wherein the cleaning comprises: baking, Wherein an internal temperature of the chamber is maintained at 1150 to 1200 ° C, etching, wherein an etching gas is supplied to the chamber and discharged through the gas outlet, and finally discharged, wherein an internal temperature of the chamber is maintained at 700 to 800 ° C while A hydrogen gas or an inert gas is supplied to the chamber and discharged through the gas outlet.

The internal temperature of the chamber in the etch can be maintained at the internal temperature of the chamber during baking.

In baking and etching, an inert gas or hydrogen gas can be supplied to the chamber and discharged through the gas outlet.

A discharge flow rate of hydrogen or inert gas during final discharge can be highest in baking, etching, and final discharge.

The ratio of a flow rate of the inert gas or hydrogen during the etching to a flow rate of the inert gas or hydrogen during baking may be from 1:7 to 1:8.

The ratio of a flow rate of the inert gas or hydrogen during baking to a flow rate of the inert gas or hydrogen during the final discharge may be 1:1.5 to 1:2.

The final discharge time is greater than the baking time and etching time.

During the idle idle period, an inert gas may be supplied to the chamber to be discharged through the gas outlet, and a flow rate of the inert gas during the idle idle period may be made smaller than the flow rate of the inert gas or hydrogen during the baking and final discharge.

Performing the virtual run may include: activation, wherein the epitaxial layer is deposited on the virtual wafer according to a predetermined recipe, determining whether the number of virtual runs is equal to a predetermined number, and when the number of virtual runs is different from the predetermined number, the number of virtual runs is increased. One, and the epitaxial layer is deposited on a new dummy wafer.

The cleaning may further include: initial discharge in which the internal temperature of the chamber is maintained at 700 to 800 ° C, and an inert gas or a hydrogen gas is supplied to the chamber and discharged through the gas outlet before baking.

The cleaning may further comprise: increasing the temperature, wherein the internal temperature of the chamber is gradually increased to the internal temperature of the chamber in the baking.

In cleaning, a susceptor for loading a wafer in the chamber is rotatable at a constant speed.

The method of manufacturing an epitaxial wafer using an epitaxial reactor may further include: performing a running standby, before the cleaning, rotating a susceptor for loading a wafer in the chamber, and maintaining an internal temperature of the chamber at 700 ° C to 780 ° C, At the same time an inert gas is introduced into the chamber.

The ratio of baking time to etching time is 1:1 to 1:1.5.

The method of manufacturing an epitaxial wafer using an epitaxial reactor may further include: manufacturing an epitaxial wafer according to a predetermined recipe when the number of dummy operations is equal to a predetermined number.

The baking time is greater than the time comparable to performing the running standby.

The internal temperature of the chamber during baking can be maintained at 1180 to 1190 °C.

The internal temperature of the chamber during the idle idle period can be maintained at 0 to 20 °C.

In accordance with another embodiment of the present invention, a method of fabricating an epitaxial wafer using an epitaxial reactor, the epitaxial reactor comprising a chamber having a gas inlet and a gas outlet, comprising the steps of: performing a standby operation, wherein A susceptor loaded in the chamber is rotated, and an internal temperature of the chamber is maintained at 700 ° C to 780 ° C while an inert gas is introduced into the chamber; the chamber is purged to remove contaminants from the chamber; Stopping the power supply of the epitaxial reactor; and performing a virtual operation to deposit an epitaxial layer on at least one dummy wafer, wherein the cleaning comprises: baking, wherein an internal temperature of the chamber is maintained while supplying a hydrogen gas or an inert gas to the chamber At 1150 to 1200 ° C; etching, wherein an etching gas is supplied to the chamber and discharged through the gas outlet; and finally discharged, wherein an internal temperature of the chamber is maintained at 700 to 800 ° C while hydrogen or an inert gas is supplied to the chamber and The time for discharge through the gas outlet, and the final discharge time, is greater than the time for baking and etching.

In accordance with still another embodiment of the present invention, a method of fabricating an epitaxial wafer using an epitaxial reactor, the epitaxial reactor comprising a chamber having a gas inlet and a gas outlet, comprising the steps of: cleaning the chamber to remove contamination from the chamber Performing inert idle to stop the power of the epitaxial reactor; and performing a virtual run to deposit an epitaxial layer on at least one dummy wafer, wherein the cleaning comprises: initial discharge, wherein an internal temperature of the chamber is maintained at 700 to 800 ° C while An inert gas or hydrogen is supplied to the chamber and discharged through the gas outlet; baking, wherein an internal temperature of the chamber is maintained at 1150 to 1200 ° C while inert gas or hydrogen is supplied to the chamber and discharged through the gas outlet; etching, wherein etching Gas is supplied to the chamber and discharged through the gas outlet, and an inert gas or hydrogen is supplied to the chamber and discharged through the gas outlet; and finally discharged, wherein an internal temperature of the chamber is maintained at 700 to 800 ° C while an inert gas or a hydrogen gas is supplied to the chamber and discharged through the gas outlet, and wherein, in the final row An inert gas or a hydrogen gas during the discharge flow rate is the highest in baking, etching, and in finally exhausted.

It is to be understood that the foregoing general description of the invention and the claims

In the description of the embodiments of the present invention, it can be understood that when a layer (or film), a region, a pattern, or a structure is referred to as being located on another substrate, another layer (or film), another region, another When a pad or "up" or "down" of another pattern is "directly" or "indirectly" on another substrate, layer (or film), region, pad, or pattern, or There may also be one or more intermediate layers. This position of the layer has been described with reference to the drawings.

1 is a flow chart showing a method of fabricating an epitaxial wafer according to an embodiment of the present invention. 2 shows an epitaxial reactor for fabricating an epitaxial wafer in accordance with an embodiment of the present invention.

Referring to Figures 1 and 2, the epitaxial reactor represented by reference numeral 100 is of a single wafer type. The epitaxial reactor 100 includes a chamber 105, a gas supply line 110, a gas discharge line 115, a base 120, a bottom clamp 125, a top clamp 127, a preheating ring 129, and a base support 130. .

The chamber 105 may be a space in which epitaxial reaction occurs and may be formed of quartz glass. The chamber 105 may include a gas inlet 108 connected to the gas supply line 110 on one side thereof, a gas outlet 109 connected to the gas discharge line 115 on the other side thereof, a bottom dome 103, and a top dome 104. . After a source gas supplied through the gas supply line 110 is introduced into the chamber 105, the source gas may flow along the surface of a wafer 101 (for example, a wafer) disposed in the chamber 105, and then may pass through the gas outlet 109 is discharged from the gas discharge line 115.

In Fig. 1, a gas supply line 110, a gas discharge line 115, a gas inlet 108, and a gas outlet 109 are shown, but are not limited thereto. The number of the above configurations may be one or more.

A bottom clamp 125 may be disposed in the chamber 105 to surround the base 120, and a top clamp 127 may be disposed in the chamber 105 while being disposed on the bottom clamp 125 to face the bottom clamp 125. Here, the bottom jig 125 and the top jig 127 may be formed of quartz (SiO ₂ ) or tantalum carbide (SiC). The preheating ring 129 may be formed along the inner surface of the bottom clamp 125 adjacent to the base 120 while being disposed adjacent to the base 120 to surround the base 120 such that heat is uniformly transmitted.

The susceptor 120 is a component for loading the wafer 101 during an epitaxial reaction. The susceptor 120 may be formed of carbon graphite, tantalum carbide or carbon graphite coated with tantalum carbide. The susceptor 120 may be disposed in the chamber 105, and the wafer 101 may be mounted on a top surface of the susceptor.

First, the operation standby S110 is executed.

After the wafer 101 is loaded onto the susceptor 120, a running standby is performed to stabilize the inside of the chamber 105 before growing an epitaxial layer (running process).

When the running standby is performed, the susceptor 120 is rotated at a constant speed. An inert gas or hydrogen (H ₂ ) supplied from the gas supply line 110 is introduced into the interior of the chamber 105 through the gas inlet 108 at an internal temperature of the chamber 105 of 700 to 780 ° C (for example, 730 ° C), and passes through the gas outlet. 109 is discharged from the gas discharge line 115.

Here, a flow rate of the inert gas or hydrogen (H ₂ ) may be 45 to 55 SLM. For example, the flow rate of hydrogen (H ₂ ) can be 50 SLM. SLM is an abbreviation for standard liters per minute.

Next, the cleaning S120 is performed.

In the cleaning S120, the contaminants in the chamber 105 are discharged from the chamber 105 through the gas outlet 109 and the gas discharge line 115.

FIG. 3 is a flow chart showing the cleaning process shown in FIG. 1 according to an embodiment of the present invention.

As shown in FIG. 3, the cleaning S120 can include baking 210, etching 220, and final discharge 230.

In the baking 210, the susceptor 120 is rotated, and the chamber is maintained at a temperature of 1150 to 1200 °C.

In the baking 210, similarly in the execution of the operation standby S110, an inert gas or hydrogen (H ₂ ) is introduced into the chamber 105 and discharged from the gas outlet 109. A flow rate in the baking 210 may be lower than a flow rate in performing the operation standby S110, without being limited thereto.

For example, the internal temperature of the chamber 105 may be 1180 to 1190 °C. For example, in baking 210, the internal temperature of the chamber 105 may be 1185 °C.

Since the internal temperature of the chamber 105 is higher in the baking 210, the contaminants attached to or absorbed into the inner surface of the chamber 105, that is, the activity of the powder or particles, are increased, so that the contaminants can be separated from the inner surface of the chamber 105 or Upgrade.

That is, contaminants adhering to the inner surface of the chamber 105 in the baking 210 step may be separated or lifted to be easily discharged from the chamber 105.

The flow rate of the hydrogen gas (H ₂ ) in the baking 210 may be the same as the flow rate of the hydrogen gas (H ₂ ) when the standby operation S110 is performed. The time of baking 210 may be longer than the time of running standby S110.

Next, in the etch 220, the susceptor 120 is rotated while supplying an etching gas to the chamber 105, so that contaminants are separated or removed from the inner surface of the chamber 105.

In addition, contaminants separated in the baking 210 can be further separated or lifted.

In the etching 220, the internal temperature of the chamber 105 is maintained at the internal temperature of the chamber 105 in the baking 210, while an etching gas such as HCl gas is supplied to the chamber 105 through the gas inlet 108, and is discharged through the gas outlet 109. Here, the flow rate of the etching gas introduced and discharged from the chamber 105 may be 20 to 30 SLM. For example, the flow rate of the etching gas can be 25 SLM.

In the etching 220, an inert gas or hydrogen gas is introduced and discharged, but the flow rate of the inert gas or hydrogen in the etching 220 may be lower than the flow rate of the inert gas or hydrogen in the baking 210.

For example, the ratio between the flow rate of the inert gas or hydrogen in the etch 220 and the flow rate of the inert gas or hydrogen in the bake 210 may be 1:7 to 1:8.

The time of etching 220 may be equal to or greater than the time of baking 210. For example, the ratio of the time of baking 210 to the time of etching 220 may be 1:1 to 1:1.5.

In sequence, the final discharge of contaminants 230 is performed.

Contaminants, such as powder or particles, separated or lifted in the baking 210 and the etch 220 are discharged from the gas discharge line 115 through the gas outlet 109.

When the susceptor 120 is rotated at a constant speed, an inert gas or hydrogen gas may be introduced into the chamber 105, and contaminants lifted by the introduced inert gas or hydrogen may be discharged through the gas outlet 109.

In the final discharge 230, the internal temperature of the chamber 105 may be 700 to 800 °C. For example, the internal temperature of the chamber 105 in the final discharge 230 may be 750 °C.

In the final discharge, the flow rate of the inert gas or hydrogen is greater than the flow rates in the baking 210 and the etching 220.

For example, the ratio of the flow rate of the inert gas or hydrogen in the bake 210 to the flow rate of the inert gas or hydrogen in the final discharge 230 may be 1:1.5 to 1:2.

The time for final discharge 230 can be greater than the time for baking 210 and etching 220.

For example, the ratio between the time of etching 220 and the time of final discharge 230 may be 1:8 to 1:10.

During baking 210, etching 220, and final discharge 230, susceptor 120 can be rotated at a constant speed (eg, 40 to 45 RPM).

Since the final discharge is performed at the highest flow rate and the longest time, the contaminants in the chamber 105 can be stably discharged. Thereby, damage or defects of the epitaxial wafer can be reduced.

4 is a flow chart showing the cleaning process shown in FIG. 1 according to another embodiment of the present invention.

The reference numerals are the same as those of Fig. 3, and show the same structures and steps as those of Fig. 3. Briefly describe or omit the same configuration and steps.

Referring to FIG. 4, the cleaning S120-1 may include an initial discharge 201, an increased temperature 202, a baking 210, an etch 220, a coating susceptor 225, and a final discharge 230.

In comparison with FIG. 3, the cleaning S120-1 may further include an initial discharge 201 and an increased temperature 202 performed between the running standby S110 and the baking 210, and a coating base 225 performed between the etching 220 and the final discharge 230.

The initial discharge 201 may be performed after the standby standby S110.

In the initial discharge 201, the susceptor 120 is rotated at a constant speed, the internal temperature of the chamber 105 is maintained at 700 to 800 ° C, and an inert gas or hydrogen gas is introduced into the chamber 105 and discharged through the gas outlet 109.

For example, the flow rate of the inert gas or hydrogen in the initial discharge 201 may be larger than the flow rate of the inert gas or hydrogen in the execution of the operation standby S110.

For example, the flow rate of the inert gas or hydrogen of the initial discharge 201 may be the same as the flow rate of the inert gas or hydrogen of the baking 210. The initial discharge 201 is a portion in which the flow rate of the inert gas or hydrogen stably maintains the same flow rate as the baking 210, that is, a stable portion of the flow rate of the inert gas or hydrogen.

For example, the flow rate of the finally discharged inert gas or hydrogen may be the highest of the initial discharge 201, the baking 210, the etching 220, and the final discharge 230.

The time of initial discharge 201 can be less than the time of baking 210.

The increased temperature 202 can be performed between the initial discharge 201 and the bake 210.

The increased temperature 202 is the portion of the chamber that gradually increases from the chamber temperature during the initial discharge 201 to the chamber temperature of the bake 210.

The time to increase the temperature 202 may be greater than the time of the etch 220 and may be less than the time of the final discharge 230.

Increasing the flow rate of the inert gas or hydrogen in the temperature 202 may be the same as the flow rate of the inert gas or hydrogen in the baking 210.

The coating pedestal 225 is performed between the etch 220 and the final vent 230.

First, before the susceptor 120 is coated, the internal temperature of the chamber 105 is lowered from the temperature of the chamber 105 for etching 220 to a predetermined temperature (for example, 20 to 40 ° C), and the gas 120 for coating the susceptor is, for example, The TCS gas is introduced into the chamber 105 and discharged through the gas outlet 109. Thus, a surface of the susceptor 120 is coated with a TCS. That is, defects (such as slip) generated by the etching 220 can be prevented.

Next, the idle idle S130 can be executed.

When the idle idle S130 is executed, the operation is stopped, and the power of the epitaxial reactor 110 is stopped.

When the idle idle S130 is performed, the total power or total power of the epitaxial reactor 100 may be zero (0), the internal temperature of the chamber 105 may be 0 to 20 ° C (eg, room temperature), and nitrogen (N ₂ ) may be used, for example. The inert gas is introduced into the chamber 105 and can be discharged through the gas outlet 109.

Here, when the inert idle S130 is performed, the discharge flow rate of the inert gas (for example, nitrogen) may be smaller than the flow rate of the inert gas or hydrogen in the execution of the standby standby S110, the baking 210, and the final discharge 230. For example, the nitrogen gas discharge rate can be 15 to 25 SLM. For example, the nitrogen flow rate can be 20 SLM.

Due to the abnormal quality of the epitaxial wafer, when the maintenance of the epitaxial reactor such as scrubber cleaning, blade teaching, and inspection of the susceptor is performed, the idle idle S130 can be performed without opening the chamber 105.

Next, a virtual run S135 is performed.

In performing virtual operation S135, an epitaxial layer is deposited on at least one dummy wafer.

For example, since the epitaxial layer is sequentially deposited on a predetermined amount of wafers, after the inerting idle S130 is performed, the reactants generated by the water formed in the chamber 105 are removed, and by the gas outlet 109 and the gas discharge line 115. Contaminants from the pulsation of the effluent stream.

The virtual run S135 may include the following processes S140, S150, and S160.

First, the activation virtual run S140 is performed.

An epitaxial layer is deposited on the dummy wafer loaded on the susceptor 120 in accordance with a predetermined recipe.

An epitaxial layer can be deposited on the dummy wafer using an alternative epitaxial growth process.

For example, the optional epitaxial growth process can be performed by a chemical vapor deposition (CVD) process, a reduced pressure chemical vapor deposition (RPCVD) process, and an ultra high vacuum chemical vapor deposition (UHVCVD) process. But it is not limited to this.

For example, the optional epitaxial growth can be performed at a temperature of 1000 to 1200 ° C, and can pass, for example, SiH ₄ , dichlorosilane (SiH ₂ Cl ₂ , DCS), trichlorosilane (SiH ₂ Cl ₃ , TCS). The source gas is supplied to the chamber for execution.

Next, after depositing the epitaxial layer, the number of dummy wafers, that is, the number of virtual runs (N, for example, N = 5) is determined to be the same as the predetermined number (S150). Here, the number of virtual runs may be the same as the number of dummy wafers on which the epitaxial layer is deposited.

When the number of virtual runs is equal to this predetermined number, the fabrication S170 of an epitaxial wafer is performed in accordance with a predetermined scheme.

However, when the number of virtual runs is different from the predetermined number, the number of virtual runs is increased by one, the epitaxial layer is deposited on the new dummy wafer, and steps S140 and S150 are repeatedly performed.

The virtual run S135 is used to remove contaminants remaining in the chamber 105.

When the inert idle S130 is performed, water can be generated through a low chamber temperature (for example, room temperature), and the reactant can be permeable to the reaction between the oxygen (O2) supplied from the generated water and the remaining gas in the chamber (for example, SixClyHz). And produced. This reactant can be a contaminant that produces defects in the epitaxial wafer.

Figure 5A is a graph showing the amount of water in the chamber of the epitaxial reactor.

As shown in FIG. 5A, the amount of water (H2O) in the chamber 105 of the epitaxial reactor 100 gradually increases after a point 501 from the start of the idle idle S130.

The pulsation of the discharge flow is generated at the gas outlet 109 and the gas discharge line 115 of the epitaxial reactor 100 according to the difference in flow rate between the gas during the execution of the inert idle S130 and the gas activating the S140, wherein the gases are discharged through the gas outlet 109. .

Figure 5B shows the pulsation of the effluent stream in the gas outlet and gas discharge line. Referring to FIG. 5B, after the idle idle S130, the pulsation of the exhaust stream can be generated. Since the powder or particles generated in the inert idle S130 are supplied to the chamber, the chamber may be contaminated. Therefore, defects may be generated in the epitaxial wafer.

The contaminants in the chamber 105 are purged by the cleaning S120 prior to performing the idle idle S130, and the reactants generated in the inert idle S130 are removed and introduced into the chamber 105 by the pulsation of the discharge flow described in FIG. 5B. Contaminants. This makes it possible to prevent defects generated in the epitaxial wafer.

Fig. 6A shows the degree of defect of the wafer before and after the inert idle is performed according to the present embodiment. Fig. 6B shows the number, a mean value, and a standard deviation of a partial light scattering (LLS) shown in Fig. 6A.

Figure 6A shows a partial light scattering (LLS) having a size of 200 nanometers (nm). Case 1 represents the LLS measured before the idle idle, and Case 2 represents the LLS measured after the idle idle. N represents the total number of defects, Avg represents an average of LLS of one wafer, and StDeV represents a standard deviation of LLS.

Referring to FIG. 6A and FIG. 6B, the Avg of Case 2 is smaller than the Avg of Case 1. After the inertness is idle, the LLS is not increased, so that the defects can be improved by the epitaxial wafer manufactured by the manufacturing method according to the embodiment.

As apparent from the above description, according to the present invention, formation of defects in the epitaxial wafer can be prevented.

It will be apparent to those skilled in the art that various modifications and changes can be made in the present invention without departing from the spirit and scope of the invention. Thus, the present invention is intended to cover the modifications and modifications of the invention

100‧‧‧Extension reactor

101‧‧‧ wafer

103‧‧‧ bottom dome

104‧‧‧Top dome

105‧‧‧ chamber

108‧‧‧ gas inlet

109‧‧‧ gas export

110‧‧‧ gas supply pipeline

115‧‧‧ gas discharge line

120‧‧‧Base

125‧‧‧ bottom fixture

127‧‧‧ top fixture

129‧‧‧Preheating ring

130‧‧‧Base support

201‧‧‧ initial discharge

202‧‧‧ Increased temperature

210‧‧‧Bake

220‧‧‧etching

225‧‧‧ coated base

230‧‧‧ final discharge

501‧‧ points

N‧‧‧ total number of defects

Avg‧‧‧ average

StDeV‧‧‧ standard deviation

1 is a flow chart showing a method of fabricating an epitaxial wafer according to an embodiment of the present invention; FIG. 2 is a view showing an epitaxial reactor for fabricating an epitaxial wafer according to an embodiment of the present invention; FIG. 4 is a flow chart showing the cleaning process shown in FIG. 1 according to another embodiment of the present invention; FIG. 5A is a view showing the cavity of the epitaxial reactor. FIG. 5B is a graph showing the pulsation of the discharge flow in the gas outlet and the gas discharge line; FIG. 6A shows the degree of defect of the wafer before and after the inert idle is performed according to the present embodiment; and FIG. 6B shows The number of partial light scattering (LLS) shown in Figure 6A, an average value, and a standard deviation.

Claims (20)

A method of fabricating an epitaxial wafer using an epitaxial reactor, the epitaxial reactor comprising a chamber having a gas inlet and a gas outlet, comprising the steps of: cleaning the chamber to remove contaminants from the chamber; performing inert idle Stopping the power of the epitaxial reactor; and performing a virtual run to deposit an epitaxial layer on at least one dummy wafer, wherein the cleaning comprises: baking, wherein an internal temperature of the chamber is maintained at 1150 to 1200 ° C; etching, one of An etching gas is supplied to the chamber and discharged through the gas outlet; and finally discharged, wherein an internal temperature of the chamber is maintained at 700 to 800 ° C while a hydrogen gas or an inert gas is supplied to the chamber and passes through the gas The outlet is discharged. A method of fabricating an epitaxial wafer using an epitaxial reactor as described in claim 1, wherein the internal temperature of the chamber during etching is maintained at the internal temperature of the chamber during baking. A method of manufacturing an epitaxial wafer using an epitaxial reactor according to claim 1, wherein in baking and etching, an inert gas or a hydrogen gas is supplied to the chamber and discharged through the gas outlet. A method of manufacturing an epitaxial wafer using an epitaxial reactor as described in claim 3, wherein a discharge flow rate of hydrogen or an inert gas during final discharge is highest in baking, etching, and final discharge. A method of producing an epitaxial wafer using an epitaxial reactor according to claim 3, wherein a ratio of a flow rate of the inert gas or the hydrogen during the etching to a flow rate of the inert gas or the hydrogen during baking is 1: 7 to 1:8. A method for producing an epitaxial wafer using an epitaxial reactor according to claim 5, wherein a ratio of a flow rate of the inert gas or the hydrogen during baking to a flow rate of the inert gas or the hydrogen during final discharge is 1 : 1.5 to 1:2. A method of manufacturing an epitaxial wafer using an epitaxial reactor as described in claim 1, wherein the time of final discharge is larger than the time of baking and the time of etching. A method of manufacturing an epitaxial wafer using an epitaxial reactor according to claim 3, wherein, during inert idle, an inert gas is supplied to the chamber to be discharged through the gas outlet, and the inert gas is used during the idle idle period. A flow rate is less than the flow rate of the inert gas or the hydrogen during baking and final discharge. A method of fabricating an epitaxial wafer using an epitaxial reactor according to claim 1, wherein performing the dummy operation comprises: activating, wherein the epitaxial layer is deposited on the dummy wafer according to a predetermined recipe; determining whether the number of virtual runs is equal to a predetermined number; When the number of virtual runs is different from the predetermined number, the number of virtual runs is increased by one, and the epitaxial layer is deposited on a new virtual wafer. A method of manufacturing an epitaxial wafer using an epitaxial reactor according to claim 1, wherein the cleaning further comprises: initial discharge, wherein the internal temperature of the chamber is maintained at 700 to 800 ° C, and an inert gas or a hydrogen gas is supplied thereto. The chamber is discharged through the gas outlet prior to baking. A method of fabricating an epitaxial wafer using an epitaxial reactor as described in claim 10, wherein the cleaning further comprises: increasing a temperature, wherein the internal temperature of the chamber is gradually increased to the internal temperature of the chamber during baking. A method of manufacturing an epitaxial wafer using an epitaxial reactor according to claim 1, wherein in the cleaning, a susceptor for loading a wafer in the chamber is rotated at a constant speed. The method of manufacturing an epitaxial wafer using an epitaxial reactor according to claim 1, further comprising performing an operation standby, wherein a susceptor for loading a wafer in the chamber is rotated before cleaning, and the chamber is The internal temperature is maintained at 700 ° C to 780 ° C while an inert gas is introduced into the chamber. A method of manufacturing an epitaxial wafer using an epitaxial reactor according to claim 1, wherein a ratio of baking time to etching time is 1:1 to 1:1.5. The method of manufacturing an epitaxial wafer using an epitaxial reactor according to claim 9, further comprising: manufacturing the epitaxial wafer according to the predetermined recipe when the number of dummy operations is equal to the predetermined amount. A method of manufacturing an epitaxial wafer using an epitaxial reactor as described in claim 13, wherein the baking time is larger than the time during which the operation standby is performed. A method of manufacturing an epitaxial wafer using an epitaxial reactor as described in claim 1, wherein the internal temperature of the chamber during baking is maintained at 1180 to 1190 °C. A method of manufacturing an epitaxial wafer using an epitaxial reactor according to claim 1, wherein the internal temperature of the chamber is maintained at 0 to 20 ° C during the execution of the inert idle. A method of fabricating an epitaxial wafer using an epitaxial reactor, the epitaxial reactor comprising a chamber having a gas inlet and a gas outlet, comprising the steps of: performing a standby operation in which a wafer is loaded in the chamber a susceptor is rotated, and an internal temperature of the chamber is maintained at 700 ° C to 780 ° C while an inert gas is introduced into the chamber; the chamber is purged to remove contaminants from the chamber; inert idle is performed to stop the a power source of the epitaxial reactor; and performing a virtual operation to deposit an epitaxial layer on the at least one dummy wafer, wherein the cleaning comprises: baking, wherein an internal temperature of the chamber is supplied while supplying a hydrogen gas or an inert gas to the chamber Maintained at 1150 to 1200 ° C; etching, wherein an etching gas is supplied to the chamber and discharged through the gas outlet; and finally discharged, wherein an internal temperature of the chamber is maintained at 700 to 800 ° C while supplying hydrogen or an inert gas The time to the chamber and exit through the gas outlet, and the final discharge time, is greater than the time for baking and etching. A method of fabricating an epitaxial wafer using an epitaxial reactor, the epitaxial reactor comprising a chamber having a gas inlet and a gas outlet, comprising the steps of: cleaning the chamber to remove contaminants from the chamber; performing inert idle Stopping the power to the epitaxial reactor; and performing a virtual run to deposit an epitaxial layer on the at least one dummy wafer, wherein the cleaning comprises: initial discharge, wherein an internal temperature of the chamber is maintained at 700 to 800 ° C while inert gas or Hydrogen is supplied to the chamber and discharged through the gas outlet; baking, wherein an internal temperature of the chamber is maintained at 1150 to 1200 ° C while inert gas or hydrogen is supplied to the chamber and discharged through the gas outlet; An etching gas is supplied to the chamber and discharged through the gas outlet, and an inert gas or a hydrogen gas is supplied to the chamber and discharged through the gas outlet; and finally discharged, wherein an internal temperature of the chamber is maintained at 700~ At 800 ° C, an inert gas or a hydrogen gas is supplied to the chamber and discharged through the gas outlet, and , The inert gas or a discharge flow rate of the hydrogen gas in the baking, etching, and finally exhausted during the final discharge highest.