CN216141656U - Vapor phase epitaxy reaction cavity structure for preventing process gas from refluxing - Google Patents
Vapor phase epitaxy reaction cavity structure for preventing process gas from refluxing Download PDFInfo
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- CN216141656U CN216141656U CN202121386667.1U CN202121386667U CN216141656U CN 216141656 U CN216141656 U CN 216141656U CN 202121386667 U CN202121386667 U CN 202121386667U CN 216141656 U CN216141656 U CN 216141656U
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Abstract
The utility model relates to the technical field of GaN preparation, and discloses a vapor phase epitaxy reaction cavity structure for preventing process gas from flowing back, which comprises a mounting substrate and a deposition base, wherein a plurality of annular flow guide rings for isolating gas are arranged on the bottom surface of the mounting substrate from inside to outside by taking the center of the bottom surface as a circle center, a mixed flow guide ring is arranged at the center of the bottom surface of the mounting substrate, a plurality of isolation rings for guiding the process gas are arranged at the center of an inner cavity of the mixed flow guide ring, and a mixed flow baffle is arranged at the center of the bottom surface of the mounting substrate through a connecting rod. According to the vapor phase epitaxy reaction cavity structure for preventing the process gas from refluxing, the undeposited process gas is diffused in a radial manner and reflows in the process gas refluxing area, and the isolated gas film layer guides and recovers the undeposited process gas, so that the corrosion of the process gas refluxing on the surface of equipment is effectively reduced, and the influence of the refluxing process gas on the growth of the deposited GaN material is reduced or avoided.
Description
Technical Field
The utility model relates to the technical field related to GaN preparation, in particular to a vapor phase epitaxy reaction cavity structure for preventing process gas from refluxing.
Background
GaN is a typical representative of third-generation wide bandgap semiconductors, has been widely used in semiconductor illumination, microwave power devices, power electronic devices, and the like, and shows great application prospects. The most ideal substrate for gallium nitride growth is naturally gallium nitride single crystal material, and such homoepitaxy (i.e. the epitaxial layer and the substrate are the same material) can greatly improve the crystal quality of the epitaxial film, reduce the dislocation density, prolong the service life of the device, improve the luminous efficiency and improve the working current density of the device.
The GaN semiconductor material is grown mainly by Metal Organic Chemical Vapor Deposition (MOCVD), Hydride Vapor Phase Epitaxy (HVPE), and gas phase reaction (CAD). The HVPE method has very high growth speed, which can reach dozens or even hundreds of microns per hour, and is very suitable for growing thick film GaN substrates, but because of the high growth speed, the epitaxial film is easy to crack, and the uniformity is required to be improved.
All need to carry out the mixing deposition with process gas through methods such as metalorganic chemical vapor deposition Method (MOCVD), hydride vapor phase epitaxy deposition method (HVPE) and gaseous reaction (CAD) when the production processing, process gas deposits on the substrate base plate, process gas inevitably strikes with the substrate base plate, make process gas produce the backward flow, easily produce corrosion to the upper substrate surface of equipment, process gas's backward flow influences the air current direction in the equipment reaction chamber simultaneously, influence the quality that the GaN material prepared to grow, consequently the utility model discloses the people has designed a prevent the vapor phase epitaxy reaction chamber structure of process gas backward flow, solve above-mentioned technical problem.
SUMMERY OF THE UTILITY MODEL
Technical problem to be solved
Aiming at the defects of the prior art, the utility model provides a vapor phase epitaxy reaction cavity structure for preventing process gas from refluxing, and solves the problem that the process gas refluxing in the vapor phase epitaxy reaction influences the growth quality of a GaN crystal.
(II) technical scheme
In order to achieve the purpose, the utility model provides the following technical scheme: a vapor phase epitaxy reaction cavity structure for preventing process gas from flowing back comprises a mounting substrate and a deposition base, wherein a plurality of annular flow guide rings for isolating gas are mounted on the bottom surface of the mounting substrate from inside to outside by taking the center of the bottom surface of the mounting substrate as a circle center, a mixed flow guide ring is mounted at the center of the bottom surface of the mounting substrate, a plurality of isolation rings for guiding the process gas are mounted at the center of an inner cavity of the mixed flow guide ring, a mixed flow baffle is mounted at the center of the bottom surface of the mounting substrate through a connecting rod, and annular flow guide slopes inclined towards an outer ring are arranged at the bottom ports of the annular flow guide ring and the mixed flow guide ring;
the center of the upper surface of the mounting substrate is provided with isolated gas inlet ports in an annular array from inside to outside, the bottom ports of the isolated gas inlet ports arranged in the annular array are communicated with the inner rings of the corresponding annular flow guide rings, the center of the upper surface of the mounting substrate is provided with a process gas inlet port, and the bottom ports of the process gas inlet ports are communicated with the inner sides of the corresponding isolation rings;
the deposition base is located under the installation base plate, the deposition base plate is installed at the top of the deposition base, and an isolation gas backflow channel is formed between the deposition base plate and the deposition base plate.
Preferably, an isolated gas diversion cavity is formed between two adjacent annular diversion rings, and a process gas mixing cavity is formed between the mixed diversion ring and the isolation ring.
Preferably, the bottom ports of the annular diversion ring and the mixed diversion ring are flush, and the mixed flow baffle is positioned under the port of the isolation ring.
Preferably, the isolation gas in the isolation gas diversion cavity is guided out through the ports of the two adjacent annular diversion rings to form an isolation gas film layer.
Preferably, the process gas mixing cavity is led out from a port of the mixing flow guide ring to form a process gas deposition channel.
Preferably, the deposition gas from the process gas deposition channel impinges on the deposition substrate to form a radial process gas recirculation zone.
Preferably, the isolation gas film layer and the process gas reflux area are converged and guided into the reflux channel to form a waste gas recovery area, and the waste gas recovery area collects the undeposited process gas, so that the condition that the undeposited process gas affects the growth of the GaN material is avoided.
Preferably, annular water conservancy diversion circle and mixed water conservancy diversion circle and corresponding annular drainage slope are integrated into one piece, and adjacent annular water conservancy diversion circle internal diameter is poor to be equal, and the isolation gas rete that the guarantee isolation gas water conservancy diversion chamber was derived can stably form for the isolation gas rete can be retrieved with the process gas guide of backward flow.
Preferably, the annular inclination angle of the annular drainage slope is an acute angle.
(III) advantageous effects
The utility model provides a vapor phase epitaxy reaction cavity structure for preventing process gas from refluxing. The method has the following beneficial effects:
the vapor phase epitaxy reaction cavity structure for preventing the process gas from flowing back is characterized in that an annular guide ring and a mixed flow ring are arranged to be matched with each other, when the device is used, an isolated gas inlet interface and a process gas inlet interface are respectively communicated and guided for isolated gas and process gas, the isolated gas flows in the isolated gas guide cavity, the isolated gas is guided out to measure an isolated gas film layer through the annular inclination of a port of an annular guide slope, the process gas is blocked by the mixed flow baffle plate to flow in the process gas mixing cavity in a mixed mode, finally, the process gas is vertically guided out through the port of the mixed guide ring, the vertically guided mixed process gas is deposited on a deposition substrate, the undeposited process gas is diffused in a radial mode to flow back in a process gas flowing back area, the isolated gas film layer positioned in the inner ring guides and recovers the undeposited process gas, and therefore, the corrosion of the process gas flowing back to the surface of the device is effectively reduced, the influence of the reflow process gas on the growth of the deposited GaN material is reduced or avoided.
Drawings
FIG. 1 is a schematic structural view of the present invention;
FIG. 2 is a schematic view of the air flow direction of the present invention.
In the figure: the device comprises a mounting substrate 1, an annular guide ring 2, a mixed guide ring 3, a separation ring 4, a separation gas inlet 5, a process gas inlet 6, a mixed flow baffle 7, an annular guide slope 8, a deposition base 9, a deposition substrate 10, a separation gas backflow channel 11, a separation gas guide cavity 12, a process gas mixing cavity 13, a separation gas film layer 14, a process gas deposition channel 15, a process gas backflow zone 16 and a waste gas recovery zone 17.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
As shown in fig. 1-2, the present invention provides a technical solution: a gas phase epitaxy reaction cavity structure for preventing process gas from flowing back comprises a mounting substrate 1 and a deposition base 9, wherein a plurality of annular flow guide rings 2 used for isolating gas are arranged on the bottom surface of the mounting substrate 1 from inside to outside by taking the center of the bottom surface of the mounting substrate as a circle center, a mixed flow guide ring 3 is arranged at the center of the bottom surface of the mounting substrate 1, a plurality of isolation rings 4 used for guiding the process gas are arranged at the center of the inner cavity of the mixed flow guide ring 3, an isolated gas flow guide cavity 12 is formed between two adjacent annular flow guide rings 2, a process gas mixing cavity 13 is formed between the mixed flow guide ring 3 and the isolation rings 4, the isolated gas in the isolated gas flow guide cavity 12 is guided out through ports of the two adjacent annular flow guide rings 2 to form an isolated gas film layer 14, a mixed flow baffle 7 is arranged at the center of the bottom surface of the mounting substrate 1 through a connecting rod, the annular flow guide rings 2 are flush with the bottom ports of the mixed flow guide ring 3, the mixed flow baffle 7 is positioned under the port of the isolation ring 4, the process gas mixing cavity 13 is led out from the port of the mixed flow guide ring 3 to form a process gas deposition channel 15, the deposition gas led out from the process gas deposition channel 15 impacts the deposition substrate 10 to form a radial process gas reflux area 16, the isolation gas film layer 14 and the process gas reflux area 16 are converged and led into the reflux channel 11 to form a waste gas recovery area 17, the waste gas recovery area 17 collects the undeposited process gas to avoid the undeposited process gas from influencing the growth of the GaN material, annular flow guide slopes 8 inclined towards the outer ring are arranged at the bottom ports of the annular flow guide ring 2 and the mixed flow guide ring 3, the annular inclination angle of the annular flow guide slopes 8 is an acute angle, the annular flow guide ring 2 and the mixed flow guide ring 3 and the corresponding annular flow guide slopes 8 are integrally formed, and the inner diameter difference of the adjacent annular flow guide rings 2 is equal, the isolation gas film layer 14 led out by the isolation gas diversion cavity 12 can be stably formed, so that the isolation gas film layer 14 can guide and recycle the reflowing process gas.
An isolated gas inlet port 5 is formed in the center of the upper surface of the mounting substrate 1 from inside to outside in an annular array, the bottom port of the isolated gas inlet port 5 arranged in the annular array is communicated with the inner ring of the corresponding annular flow guide ring 2, a process gas inlet port 6 is formed in the center of the upper surface of the mounting substrate 1, and the bottom port of the process gas inlet port 6 is communicated with the inner side of the corresponding isolation ring 4.
The deposition base 9 is positioned right below the mounting substrate 1, the deposition substrate 10 is mounted on the top of the deposition base 9, and an isolated gas backflow channel 11 is formed between the deposition substrate 10 and the deposition base 9.
In summary, the isolation gas inlet 5 and the process gas inlet 6 respectively communicate and guide the isolation gas and the process gas, the isolation gas flows in the isolation gas guide cavity 12, the process gas is blocked by the mixed flow baffle 7 and flows in the process gas mixing cavity 13, and finally is vertically led out through the port of the mixed guide ring 3, the vertically led mixed process gas is deposited on the deposition substrate 10, the undeposited process gas diffuses radially and flows back in the process gas recirculation zone 16, and the isolation gas film layer 14 positioned in the inner ring guides and recovers the undeposited process gas.
It is noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising a reference structure" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the utility model, the scope of which is defined in the appended claims and their equivalents.
Claims (9)
1. The utility model provides a prevent vapour phase epitaxy reaction chamber structure of process gas backward flow, includes mounting substrate and deposition base, its characterized in that: the bottom surface of the mounting substrate is provided with a plurality of annular flow guide rings for isolating gas from inside to outside by taking the center of the bottom surface as a circle center, the center of the bottom surface of the mounting substrate is provided with a mixed flow guide ring, the center of an inner cavity of the mixed flow guide ring is provided with a plurality of isolation rings for guiding process gas, the center of the bottom surface of the mounting substrate is provided with a mixed flow baffle plate through a connecting rod, and the bottom ports of the annular flow guide ring and the mixed flow guide ring are both provided with annular flow guide slopes inclined towards the outer ring;
the center of the upper surface of the mounting substrate is provided with isolated gas inlet ports in an annular array from inside to outside, the bottom ports of the isolated gas inlet ports arranged in the annular array are communicated with the inner rings of the corresponding annular flow guide rings, the center of the upper surface of the mounting substrate is provided with a process gas inlet port, and the bottom ports of the process gas inlet ports are communicated with the inner sides of the corresponding isolation rings;
the deposition base is located under the installation base plate, the deposition base plate is installed at the top of the deposition base, and an isolation gas backflow channel is formed between the deposition base plate and the deposition base plate.
2. A vapor phase epitaxy reactor structure for preventing backflow of process gases as recited in claim 1, wherein: an isolated gas diversion cavity is formed between two adjacent annular diversion rings, and a process gas mixing cavity is formed between the mixed diversion ring and the isolation ring.
3. A vapor phase epitaxy reactor structure for preventing backflow of process gases as recited in claim 1, wherein: the bottom ports of the annular diversion ring and the mixed diversion ring are parallel and level, and the mixed flow baffle is positioned under the port of the isolation ring.
4. A vapor phase epitaxy reactor structure for preventing backflow of process gases as recited in claim 2, wherein: and the isolated gas in the isolated gas diversion cavity is led out through the ports of the two adjacent annular diversion rings to form an isolated gas film layer.
5. A vapor phase epitaxy reactor structure for preventing backflow of process gases as recited in claim 2, wherein: and the process gas mixing cavity is led out from the port of the mixing guide ring to form a process gas deposition channel.
6. A vapor phase epitaxy reactor structure for preventing backflow of process gases as recited in claim 5, wherein: deposition gas from the process gas deposition channel impinges on the deposition substrate to form a radial process gas recirculation zone.
7. The structure of a vapor phase epitaxy reaction chamber for preventing backflow of process gases as set forth in claim 4, wherein: the isolated gas film layer and the process gas reflux area are converged and guided into a reflux channel to form a waste gas recovery area.
8. A vapor phase epitaxy reactor structure for preventing backflow of process gases as recited in claim 5, wherein: the annular diversion rings, the mixed diversion rings and the corresponding annular diversion slopes are integrally formed, and the inner diameter difference of the adjacent annular diversion rings is equal.
9. A vapor phase epitaxy reactor structure for preventing backflow of process gases as recited in claim 5, wherein: the annular inclination angle of the annular drainage slope is an acute angle.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113445129A (en) * | 2021-06-21 | 2021-09-28 | 无锡吴越半导体有限公司 | Vapor phase epitaxy reaction cavity structure for preventing process gas from refluxing |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113445129A (en) * | 2021-06-21 | 2021-09-28 | 无锡吴越半导体有限公司 | Vapor phase epitaxy reaction cavity structure for preventing process gas from refluxing |
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