CN101191201A - Reaction cavity for metal organic substance chemical gaseous phase deposition device - Google Patents
Reaction cavity for metal organic substance chemical gaseous phase deposition device Download PDFInfo
- Publication number
- CN101191201A CN101191201A CNA2006101189707A CN200610118970A CN101191201A CN 101191201 A CN101191201 A CN 101191201A CN A2006101189707 A CNA2006101189707 A CN A2006101189707A CN 200610118970 A CN200610118970 A CN 200610118970A CN 101191201 A CN101191201 A CN 101191201A
- Authority
- CN
- China
- Prior art keywords
- reactant gases
- reaction
- cavity
- reaction cavity
- reaction gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000006243 chemical reaction Methods 0.000 title claims abstract description 39
- 229910052751 metal Inorganic materials 0.000 title abstract description 3
- 239000002184 metal Substances 0.000 title abstract description 3
- 230000008021 deposition Effects 0.000 title description 2
- 239000000126 substance Substances 0.000 title 2
- 239000007792 gaseous phase Substances 0.000 title 1
- 239000007921 spray Substances 0.000 claims abstract description 39
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 10
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 10
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 10
- 239000010439 graphite Substances 0.000 claims abstract description 10
- 239000007789 gas Substances 0.000 claims description 56
- 239000000376 reactant Substances 0.000 claims description 43
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 23
- 238000009826 distribution Methods 0.000 claims description 16
- 239000000463 material Substances 0.000 claims description 11
- 238000013022 venting Methods 0.000 claims description 7
- 238000009827 uniform distribution Methods 0.000 claims description 3
- 238000010276 construction Methods 0.000 claims description 2
- 238000006557 surface reaction Methods 0.000 claims 1
- 239000012495 reaction gas Substances 0.000 abstract description 12
- 230000008901 benefit Effects 0.000 abstract description 3
- 238000009792 diffusion process Methods 0.000 abstract description 3
- 239000000758 substrate Substances 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 3
- 238000000407 epitaxy Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 238000010992 reflux Methods 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000010504 bond cleavage reaction Methods 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000007017 scission Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 239000002912 waste gas Substances 0.000 description 1
Images
Landscapes
- Chemical Vapour Deposition (AREA)
Abstract
The invention discloses a reaction cavity for metal organic chemical vapor deposition equipment, which mainly comprises reaction gas inlet pipes, a reaction gas buffer cavity, a spray opening, a graphite boat, a base, a base supporting frame, an air outlet and a cavity shell. Reaction gas A is led in the top of the reaction cavity and forms a horizontal laminar diffusion along the base after the reaction gas enters into the reaction cavity, a reaction gas B inlet pipe is coaxially wrapped on the surface of a reaction gas A inlet pipe, extends into the reaction cavity and extends along the horizontal direction, the tail end of the reaction gas B inlet pipe is provided with the reaction gas buffer cavity and the vertical spray opening, the base is arranged on the base supporting frame, the air outlet is arranged on the bottom of the reaction cavity, the graphite boat is embedded on the base. The invention has the advantages that: the structure of the buffer cavity causes the reaction gas to form the horizontal airflow after the reaction gas enters into the reaction cavity, weakens the rebound return flow of the vertical spray airflow and alleviates the local turbulence of the reaction gas; the design of the reaction cavity has expansibility.
Description
Technical field
The present invention relates to a kind of vapor deposition apparatus, particularly a kind of reaction cavity of metal-organic chemical vapor deposition equipment.
Technical background
Metal-organic chemical vapor deposition equipment (Metal Organic Chemical VaporDeposition, be called for short: MOCVD) technology collection precision optical machinery, semiconductor material, vacuum electronic, hydromeehanics, optics, chemistry, computer is multidisciplinary is one, be a kind of level of automation height, cost an arm and a leg, high-end semiconductor material, photoelectron specific equipment that the technology integrated level is high.MOCVD is a kind of non-equilibrium growing technology, and its working mechanism is by the source gas transmission, makes III family alkylate (TMGa, TMIn, TMAl, two luxuriant magnesium etc.) and the hydride (AsH of V family
3, PH
3, NH
3Deng) carry out heat scission reaction on the substrate in reaction chamber.Make the growth velocity of epitaxial material more moderate, can more accurately control thickness.Its component and growth velocity are by the source flux decision of the air-flow of various heterogeneities and accurately control.MOCVD is as the epitaxially grown Perfected process of compound semiconductor materials; have quality height, good stability, good reproducibility, technology flexibly, can the mass-producing volume production etc. characteristics; become industry and produced the key core equipment of semiconductor photoelectric device and microwave device, had broad application prospects and industrialization value.
Reaction cavity is the most crucial part of whole M OCVD equipment, has determined the performance of entire equipment.And the geometry of cavity and size are the primary factor that influences deposition properties because its directly influence gas in the chamber intravital flow behavior, and the transporting and diffusion way of reactant gases.
Because above-mentioned background, seeking a kind of more outstanding gas delivery scheme is the problem that scientific research personnel, equipment design manufacturer are being explored always.Just at present existing two kinds of typical designs, a kind of is planetary reaction chamber, and another kind is the spray-type reaction chamber, and the both has advantage separately, but its cavity design institute inherent shortcoming is also arranged.
Summary of the invention
Purpose of the present invention the invention provides a kind of reaction cavity of metal-organic chemical vapor deposition equipment at the defective that exists in the prior art.The present invention mainly comprises: reactant gases A intake ducting (1), reactant gases B intake ducting (2), reactant gases cushion chamber (3 or 3 '), mouth spray (4), graphite boat (5), pedestal (6), base supports frame (7), venting port (8) and shell cavity (9), it is characterized in that described reactant gases A intake ducting (1) employing inserts from the reaction cavity top, pedestal (6) is provided with thereunder, make gas A enter the laminar flow diffusion that forms horizontal direction behind the reaction cavity along pedestal (6), coaxial reactant gases A intake ducting (1) appearance that is wrapped in of reactant gases B intake ducting (2), stretch to the horizontal direction edge after stretching into reaction cavity, the end of reactant gases B intake ducting (2) is provided with the mouth spray (4) of reactant gases cushion chamber (3) and vertical direction, mouth spray (4) can be selected according to the spout distribution and the gas flow rate of mouth spray to the distance of the reaction surface of pedestal (6) upper surface, makes the thickness of material growth even.The distribution of the mouth spray (4) that reactant gases B intake ducting (2) is terminal is all distributions or uniform distribution or array distribution or distribution.The terminal mouth spray (4) of reactant gases B intake ducting (2) is one group of aperture spray nozzle or is one group of piped spray nozzle or is the spray nozzle of one group of annular slot.The end of reactant gases cushion chamber (3) is enclosed construction or makes to the lower edge and stretch open-ended reactant gases cushion chamber (3 ').Pedestal (6) is installed on the base supports frame (7), and venting port (8) is arranged on the bottom of reaction cavity, and graphite boat (5) is inlaid on the pedestal (6).
After reactant gases A enters reaction chamber from the center intake ducting, from the center along circumferential level to around flow, reactant gases B enters cushion chamber from another intake ducting, aperture by the cushion chamber lower end sprays then, the top that is combined in pedestal with reactant gases A distributes uniformly, because the drive of horizontal gas flow, the bounce-back that has weakened vertical spray air-flow greatly refluxes.
Advantage of the present invention is that the distance of mouth spray and reaction surface can be regulated according to the thickness and the characteristic thereof of material growth, the structure of cushion chamber forms horizontal gas flow after making reactant gases enter reaction chamber, weaken the bounce-back backflow of vertical spray air-flow and alleviated the reactant gases local turbulence, the reaction cavity design has extensibility, the size of reaction cavity can be easy to change as requested, lowers manufacturing cost.
Description of drawings
Fig. 1 reaction cavity structural representation of the present invention;
The open-ended reaction cavity structural representation of Fig. 2 cushion chamber of the present invention.
1 reactant gases A intake ducting, 2 reactant gases B intake ductings, 3 reactant gases cushion chambers, 3 ' reactant gases cushion chamber, 4 mouth sprays, 5 graphite boats, 6 pedestals, 7 base supports framves, 8 venting ports, 9 shell cavities
Embodiment
Further specify embodiments of the invention below in conjunction with accompanying drawing:
Referring to Fig. 1, reactant gases A intake ducting 1, reactant gases B intake ducting 2, reactant gases cushion chamber 3 or 3 ', mouth spray 4, graphite boat 5, pedestal 6, base supports frame 7, venting port 8 and reaction cavity shell 9, reactant gases B enters in cushion chamber 3 or 3 ' from intake ducting 2, then from mouth spray 4 ejections, graphite boat 5 directly is nested on the pedestal 6, and reacted waste gas is discharged from the venting port 8 that is communicated with emission-control equipment.Reactant gases cushion chamber 3 is positioned at the top of pedestal 6, according to the thickness and the characteristic thereof of material growth, regulates the distance of the two, to optimize the material epitaxy growth.
In order to optimize vertical spray gas flow state, the end of reactant gases cushion chamber can seal, as shown in Figure 1.Or the end of cushion chamber is hatch frame 3 ', as shown in Figure 2.The open-ended aperture of cushion chamber is determined according to design flow rate of reactive gas and pressure.
Because this reaction cavity design can form good laminar flow regime and reactant gases distribution uniformly in substrate, so substrate can not rotated or low speed rotation.
Substrate material is placed on the graphite boat, and the sizable zone on the plane of its place substrate can both have extremely homogeneous reaction gas distribution, does not need to use rotation or adopts more slow-revving substrate and just epitaxy uniformly of substrate.The air velocity distribution that horizontal laminar flow and vertical spray combine has also weakened the local turbulence that the bounce-back of spray gas refluxes and causes greatly, so not only improved the homogeneity that reactant gases distributes, solved the cleaning problem that particle adheres to, also made growth interface more precipitous simultaneously.
Claims (4)
1. the reaction cavity of a metal-organic chemical vapor deposition equipment, mainly comprise: reactant gases A intake ducting (1), reactant gases B intake ducting (2), reactant gases cushion chamber (3,3 '), mouth spray (4), graphite boat (5), pedestal (6), base supports frame (7), venting port (8) and shell cavity (9), it is characterized in that described reactant gases A intake ducting (1) inserts from the reaction cavity top, pedestal (6) is provided with thereunder, coaxial reactant gases A intake ducting (1) appearance that is wrapped in of reactant gases B intake ducting (2), stretch to the horizontal direction edge after stretching into reaction cavity, the end of reactant gases B intake ducting (2) is provided with the mouth spray (4) of reactant gases cushion chamber (3) and vertical direction, mouth spray (4) to pedestal (6) thus the distance of upper surface reaction surface can distribute and gas flow rate select to make the thickness of material growth even according to the spout of mouth spray, pedestal (6) is installed on the base supports frame (7), venting port (8) is arranged on the bottom of reaction cavity, and graphite boat (5) is inlaid on the pedestal (6).
2. the reaction cavity of metal-organic chemical vapor deposition equipment according to claim 1 is characterized in that the distribution of the mouth spray (4) that described reactant gases B intake ducting (2) is terminal is all distributions or uniform distribution or array distribution or distribution.
3. the reaction cavity of metal-organic chemical vapor deposition equipment according to claim 1 is characterized in that the terminal mouth spray (4) of described reactant gases B intake ducting (2) is one group of aperture spray nozzle or is one group of piped spray nozzle or is the spray nozzle of one group of annular slot.
4. the reaction cavity of a kind of metal-organic chemical vapor deposition equipment according to claim 1, the end that it is characterized in that described reactant gases cushion chamber (3) is enclosed construction or makes to the lower edge and stretch open-ended reactant gases cushion chamber (3 ').
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2006101189707A CN101191201B (en) | 2006-12-01 | 2006-12-01 | Reaction cavity for metal organic substance chemical gaseous phase deposition device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2006101189707A CN101191201B (en) | 2006-12-01 | 2006-12-01 | Reaction cavity for metal organic substance chemical gaseous phase deposition device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN101191201A true CN101191201A (en) | 2008-06-04 |
| CN101191201B CN101191201B (en) | 2010-12-15 |
Family
ID=39486399
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2006101189707A Active CN101191201B (en) | 2006-12-01 | 2006-12-01 | Reaction cavity for metal organic substance chemical gaseous phase deposition device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN101191201B (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101560650B (en) * | 2009-05-15 | 2011-01-05 | 江苏大学 | Multiple spray header chemical vapor deposition reaction chamber structure |
| CN103320769A (en) * | 2013-06-21 | 2013-09-25 | 光垒光电科技（上海）有限公司 | Reaction cavity |
| CN105256369A (en) * | 2015-10-20 | 2016-01-20 | 中国电子科技集团公司第四十八研究所 | High-temperature-resistant horizontal multi-layer gas inlet device for SiC epitaxy |
| CN112225585A (en) * | 2020-09-30 | 2021-01-15 | 中钢集团新型材料（浙江）有限公司 | Process for depositing silicon carbide coating on surface of graphite piece |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102766854B (en) * | 2012-08-16 | 2013-06-05 | 江苏汉莱科技有限公司 | Novel system for metal-organic chemical vapor deposition (MOCVD) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030194508A1 (en) * | 2002-04-11 | 2003-10-16 | Carpenter Craig M. | Deposition methods utilizing microwave excitation, and deposition apparatuses |
| CN1614796A (en) * | 2003-11-07 | 2005-05-11 | 敏盛科技股份有限公司 | Multi-chamber separated crystal organic metallized gas phase crystallizing device and method |
| CN1712561A (en) * | 2004-06-25 | 2005-12-28 | 鸿富锦精密工业（深圳）有限公司 | Gas mixer |
-
2006
- 2006-12-01 CN CN2006101189707A patent/CN101191201B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030194508A1 (en) * | 2002-04-11 | 2003-10-16 | Carpenter Craig M. | Deposition methods utilizing microwave excitation, and deposition apparatuses |
| CN1614796A (en) * | 2003-11-07 | 2005-05-11 | 敏盛科技股份有限公司 | Multi-chamber separated crystal organic metallized gas phase crystallizing device and method |
| CN1712561A (en) * | 2004-06-25 | 2005-12-28 | 鸿富锦精密工业（深圳）有限公司 | Gas mixer |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101560650B (en) * | 2009-05-15 | 2011-01-05 | 江苏大学 | Multiple spray header chemical vapor deposition reaction chamber structure |
| CN103320769A (en) * | 2013-06-21 | 2013-09-25 | 光垒光电科技（上海）有限公司 | Reaction cavity |
| CN105256369A (en) * | 2015-10-20 | 2016-01-20 | 中国电子科技集团公司第四十八研究所 | High-temperature-resistant horizontal multi-layer gas inlet device for SiC epitaxy |
| CN112225585A (en) * | 2020-09-30 | 2021-01-15 | 中钢集团新型材料（浙江）有限公司 | Process for depositing silicon carbide coating on surface of graphite piece |
| CN112225585B (en) * | 2020-09-30 | 2022-05-20 | 中钢新型材料股份有限公司 | Process for depositing silicon carbide coating on surface of graphite piece |
Also Published As
| Publication number | Publication date |
|---|---|
| CN101191201B (en) | 2010-12-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN201099698Y (en) | Ternary airflow metallorganic chemical vapour deposition equipment reaction cavity | |
| CN201284372Y (en) | Reaction cavity of multi-airflow metallorganic chemical vapor deposition apparatus | |
| CN101191202B (en) | Heating system for metal organic substance chemical gaseous phase deposition device reaction cavity | |
| CN102021530A (en) | Reaction chamber of multiple-gas coupling metal metallorganic chemical vapor deposition equipment | |
| CN102383106A (en) | Metal organic chemical vapour deposition reaction chamber for fast removing residual reaction gas | |
| CN101423937B (en) | Multi-gas concentric injection showerhead | |
| CN101802254B (en) | Chemical vapor deposition reactor | |
| CN101191201B (en) | Reaction cavity for metal organic substance chemical gaseous phase deposition device | |
| CN106498368B (en) | A kind of spray head for MOCVD device | |
| CN1292092C (en) | Bilayer inlet gas spray nozzle in use for metal-organic chemical vapor deposition device | |
| CN105441904A (en) | Gas spray device, chemical vapor deposition device and method | |
| CN103014846A (en) | Concentric-ring sprayer structure for material vapor phase epitaxy | |
| WO1992005577A1 (en) | Method and apparatus for growing compound semiconductor crystals | |
| CN201626981U (en) | Gas inlet device of chemical vapor phase deposition epitaxy equipment | |
| CN103422071B (en) | Vacuum cavity chamber capable of rapidly changing gas-homogenizing mode | |
| JPH08306632A (en) | Vapor epitaxial growth equipment | |
| CN106811736A (en) | A kind of chemical vapor deposition unit | |
| TWI472645B (en) | Mocvd gas diffusion system with air inlet baffles | |
| CN102230165A (en) | Spray header structure for chemical vapor deposition epitaxial equipment | |
| WO2021003706A1 (en) | Wafer carrying disk and wafer epitaxial device | |
| CN201437552U (en) | Gas inlet system | |
| CN202090055U (en) | Gas delivery device and reactor employing same | |
| CN1684787A (en) | Process for production of metallic powder and producing device thereof | |
| CN201406469Y (en) | Heating device for process chamber of vapor deposition equipment | |
| CN104233230A (en) | Reaction device and reaction manufacturing process for chemical vapor deposition |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| ASS | Succession or assignment of patent right |
Owner name: GUANGDONG ZHAOXIN SEMICONDUCTOR EQUIPMENT MANUFACT Free format text: FORMER OWNER: GAN ZHIYIN Effective date: 20091106 |
|
| C41 | Transfer of patent application or patent right or utility model | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20091106 Address after: Guangdong province Foshan City Nanhai Pingzhou Shawei Industrial Avenue South West of the first floor of building C plant Applicant after: Guangdong RealFaith Semiconductor Equipment Co., Ltd. Address before: Room 500, No. 309 blue wave road, Zhangjiang, Shanghai Applicant before: Gan Zhiyin |
|
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address |
Address after: 528200 1st Floor, No. 5 Nangang Street, Pingzhou, Nanhai District, Foshan City, Guangdong Province Patentee after: Guangdong Zhongyuan Semiconductor Technology Co., Ltd. Address before: 528251 First Floor Workshop of Building C, Nangang Street, Pingzhou Shawei Industrial West District, Nanhai District, Foshan City, Guangdong Province Patentee before: Guangdong RealFaith Semiconductor Equipment Co., Ltd. |
|
| CP03 | Change of name, title or address |