CN201406469Y - Heating device for process chamber of vapor deposition equipment - Google Patents
Heating device for process chamber of vapor deposition equipment Download PDFInfo
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- CN201406469Y CN201406469Y CN2009200702530U CN200920070253U CN201406469Y CN 201406469 Y CN201406469 Y CN 201406469Y CN 2009200702530 U CN2009200702530 U CN 2009200702530U CN 200920070253 U CN200920070253 U CN 200920070253U CN 201406469 Y CN201406469 Y CN 201406469Y
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Abstract
Heating device for process chamber of vapor deposition equipment comprises a gas A intake pipe, a gas B intake pipe, a buffer cavity, a spray port, a process chamber, a base, a graphite board, a heater and an exhaust pipe. The heating device is characterized in that a heating sheet in the heater is provided on a heating sheet support plate, of which one end is connected with an earth wire outlet electrode via an earth wire electrode terminal, an earth wire plate, an earth wire conductive support column, a clamp and an earth wire electrode plate, and the other end is connected with a live wireoutlet electrode via a live wire electrode terminal, a live wire plate, a live wire conductive support column, a clamp and a live wire electrode plate, and the heating sheet support plate, the earth wire plate, the live wire plate and the conductive support column are clamped fixedly via the clamp. The heating device realizes heating via multiple-region radiation way, with adjustable height, can realize rapid temperature increase and decrease, uniform heating and temperature modulation, and can effectively improve uniformity of deposited material, thus improving the quality of epitaxial deposition.
Description
Technical field
The utility model relates to metal organic substance chemical gaseous phase deposition device reaction cavity, particularly a kind of heating unit of gaseous phase deposition device reaction cavity.
Background technology
Metal-organic chemical vapor deposition equipment (MOCVD) technology collection precision optical machinery, semiconductor material, vacuum electronic, hydromeehanics, optics, chemistry, computer is multidisciplinary is one, high-end semiconductor material, photoelectron specific equipment that metal-organic chemical vapor deposition equipment is a kind of level of automation height, cost an arm and a leg, the technology integrated level is high.Working temperature is about 1000 degrees centigrade, and the speed of growth is the hundreds of nanometer approximately per hour, and dislocation desity is 10
7Cm
-2Below.MOCVD is a kind of non-equilibrium growing technology, and its working mechanism is by the source gas transmission, makes III family alkylate (TMGa, TMIn, TMAl, two luxuriant magnesium etc.) and the hydride (AsH of V family
3, PH
3, NH
3Deng) carry out heat scission reaction on the substrate in reaction chamber.Growth velocity with regard to epitaxial material is more moderate, can more accurately control thickness.Its component and growth velocity are by the source flux decision of the air-flow of various heterogeneities and accurately control.MOCVD is as the epitaxially grown Perfected process of compound semiconductor materials; have quality height, good stability, good reproducibility, technology flexibly, can the mass-producing volume production etc. characteristics; become industry and produced the key core equipment of semiconductor photoelectric device and microwave device, had broad application prospects and industrialization value.
Reaction cavity is the part of whole M OCVD device core, has determined the performance of entire equipment.And the cavity heating system is the important factor that influences deposition properties, and the homogeneity of its heating and the intensification of well heater and cooling rate directly affect the homogeneity of epitaxial deposition and the abruptness of growth interface.
By above-mentioned background technology as can be known, seek a kind of homogeneous heating, and can be rapidly heated and fast cooling and realize that the MOCVD heating system of temperature homogeneity is very to be necessary, because its direct relation the quality of epitaxial deposition.
Summary of the invention
The utility model is at the defective that exists in the prior art, and a kind of heating unit of gaseous phase deposition device reaction cavity is provided.Gaseous phase deposition device reaction cavity by the gas A intake ducting (14) that is arranged at the heater system top, reactant gases B intake ducting (15), be arranged at reactant gases B intake ducting (15) terminal cushion chamber (18) and mouth spray (17), be arranged at reaction chamber (21) under the mouth spray (17) and pedestal (20), graphite boat (19), well heater (31), reactor off-gas discharge line (23) form.It is characterized in that described well heater (31) is positioned at pedestal (20), pedestal (20) is set to fixed or rotary-type.Heating piece (the 7a of well heater (31), 7b, 7c) be positioned on the heating piece supporting disk (30), heating piece supporting disk (30) is positioned at pedestal inside top below, electrode plate (22) is set to ground wire electrode plate (22a), inner ring firewire electrode dish (22b), centre circle firewire electrode dish (22c), four zones of outer ring firewire electrode dish (22d), heating piece (7a, 7b, end 7c) is respectively through ground line electrode joint pin (8a, 8b, 8c), ground drum (6a, 6b, 6c), ground wire conductive supporting post (2a, 2b, 2c), anchor clamps (11), ground wire electrode plate (22a) is connected with ground wire extraction electrode 25, heating piece (7a, 7b, the other end 7c) is respectively through firewire electrode joint pin (9a, 9b, 9c), live wire dish (5a, 5b, 5c), live wire conductive supporting post (1a, 1b, 1c), anchor clamps (11), firewire electrode dish (22b, 22c, 22d) with live wire extraction electrode (26,28,29) connect, supporting disk (30), live wire dish (5a, 5b, 5c), ground drum (6a, 6b, fixedly connected 6c) through connecting pillar stiffener (12), anchor clamps (11) are fixed on ground wire electrode plate (22a), firewire electrode dish (22b, 22c, 22d), heating piece supporting disk (30), ground drum (6a, 6b, 6c), live wire dish (5a, 5b, 5c), conductive supporting post (1a, 1b, 1c, 2a, 2b, 2c) grip through anchor clamps (11), thermal insulating disc (3a, 3b, 3c) be positioned at live wire dish (5a, 5b, below 5c), the interlayer of thermal insulating disc is fixedly connected through connecting pillar stiffener (4).
The utility model has the advantages that employing can regulate the multi-region radiation mode heating of height, realize rapid temperature rise and drop, even heating and temperature regulation, effectively improve the homogeneity of deposited material, thereby improved the quality of epitaxial deposition.
Description of drawings
The structural representation of Fig. 1 heating unit;
The vertical view of Fig. 2 heating unit;
The upward view of Fig. 3 heating unit.
Among the figure: 1a inner ring live wire conductive supporting post, 1b centre circle live wire conductive supporting post, 1c outer ring live wire conductive supporting post, 2a inner ring ground wire conductive supporting post, 2b centre circle ground wire conductive supporting post, 2c outer ring ground wire conductive supporting post, 3a inner ring thermal insulating disc, 3b centre circle thermal insulating disc, 3c outer ring thermal insulating disc, 4 thermal baffles connect pillar stiffener, 5a inner ring live wire dish, 5b centre circle live wire dish, 5c outer ring live wire dish, 6a inner ring ground drum, 6b centre circle ground drum, ground, 6c outer ring drum, 7a inner ring heating piece, 7b centre circle heating piece, 7c outer ring heating piece, 8a inner ring ground line electrode joint pin, 8b centre circle ground line electrode joint pin, ground, 8c outer ring line electrode joint pin, 9a inner ring firewire electrode joint pin, 9b centre circle firewire electrode joint pin, 9c outer ring firewire electrode joint pin, 10 set nuts, 11 anchor clamps, 12 connect pillar stiffener, 13 sleeves, 14 reactant gases A intake ductings, 15 reactant gases B intake ductings, 16 semiconductor wafers, 17 mouth sprays, 18 cushion chambers, 19 graphite boats, 20 pedestals, 21 reaction chambers, 22 electrode plate, 22a ground wire electrode plate, 22b inner ring firewire electrode dish, 22c centre circle firewire electrode dish, 22d outer ring firewire electrode dish, 23 reactor off-gas discharge lines, 24 cooling gas gas exhaust ducts, 25 ground wire extraction electrodes, 26 inner rings are drawn firewire electrode, 27 cooling gas inlet mouths, 28 centre circle live wire extraction electrodes, 29 outer ring live wire extraction electrodes, 30 heating piece supporting disks, 31 well heaters.
Embodiment
Further specify embodiment of the present utility model below in conjunction with accompanying drawing:
Referring to Fig. 1～Fig. 3, gaseous phase deposition device reaction cavity by the gas A intake ducting 14 that is arranged at the heater system top, reactant gases B intake ducting 15, be arranged at reactant gases B intake ducting 15 ends cushion chamber 18 and mouth spray 17, be arranged at reaction chamber 21 under the mouth spray 17 and pedestal 20, graphite boat 19, well heater 31, reactor off-gas discharge line 23 is formed.Well heater 31 is positioned at pedestal 20, and pedestal 20 is set to fixed or rotary- type.Heating piece 7a, 7b, 7c in the well heater 31 are positioned on the heating piece supporting disk 30, heating piece supporting disk 30 is positioned at pedestal inside top below, and electrode plate 22 is set to ground wire electrode plate 22a, inner ring firewire electrode dish 22b, centre circle firewire electrode dish 22c, four zones of firewire electrode dish 22d, outer ring.Heating piece 7a, 7b, 7c is supported by heating piece supporting disk 30, heating piece supporting disk 30 adopts insulation, lower thermal conductivity during high temperature, the material of high-reflectivity, make as boron nitride or other stupaliths, perhaps be coated with the high temperature insulating insulation by the high temperature material surface, reflective coating, play certain heat-insulation and heat-preservation effect, improve the efficient and the heat-up rate of well heater, heating piece 7a, 7b, the end of 7c is respectively through ground line electrode joint pin 8a, 8b, 8c, ground drum 6a, 6b, 6c, ground wire conductive supporting post 2a, 2b, 2c, anchor clamps 11, ground wire electrode plate 22a is connected with ground wire extraction electrode 25, the other end is respectively through firewire electrode joint pin 9a, 9b, 9c, live wire dish 5a, 5b, 5c, live wire conductive supporting post 1a, 1b, 1c, anchor clamps 11, firewire electrode dish 22b, 22c, 22d and live wire extraction electrode 26,28,29 connect, anchor clamps 11 are fixed on ground wire electrode plate 22a, firewire electrode dish 22b, 22c, on the 22d, conductive supporting post 1a, 1b, 1c, 2a, 2b, the set nut 10 of 2c on anchor clamps 11 grips.Clamping length can be regulated: unscrew set nut 10, unclamp anchor clamps 11 after, change clamping length, tighten set nut 10 again and get final product.By the change of clamping length, heating piece 7a, 7b, 7c change with the distance of relative pedestal 20 bottom surfaces with it thereupon, and three district's heating pieces, and promptly heating piece 7a, heating piece 7b, heating piece 7c can distinguish separately with the distance of relative pedestal 20 bottom surfaces with it and regulate.Can provide a kind of temperature distribution of pedestal upper surface and debugging method of temperature level of regulating for the well heater installation and maintenance thus.Supporting disk 30, live wire dish 5a, 5b, 5c, fixedly connected through connecting pillar stiffener 12 between drum 6a, 6b, the 6c, thermal insulating disc 3a, 3b, 3c are positioned at the below of live wire dish 5a, 5b, 5c, the material of lower thermal conductivity, high-reflectivity when thermal insulating disc 3a, 3b, 3c employing insulation, high temperature, make as boron nitride or other stupaliths, perhaps be coated with high temperature insulating insulation, reflective coating, play further insulation effect by the high temperature material surface.The interlayer of thermal insulating disc is fixedly connected through connecting pillar stiffener 4.
Well heater 31 is surrounded by pedestal 20, and when pedestal 20 and reaction chamber 21 needs coolings, cooling gas is fed by cooling gas intake ducting 27, and 24 places are drawn out of at the cooling gas gas exhaust duct, and cooling gas is taken away a large amount of heats, plays the effect that cools fast.
In the described well heater 31, adopt inner ring heating piece 7a, centre circle heating piece 7b, outer ring heating piece 7c three district's heating pieces that pedestal 20 is carried out radiation heating, thereby heating graphite boat 19, and then semiconductor crystal wafer 16 is heated, reactant gases A and reactant gases B are reacted and at semiconductor crystal wafer 16 deposit films at reaction chamber 21.The power input of drawing firewire electrode 26, centre circle live wire extraction electrode 28, outer ring live wire extraction electrode 29 change inner ring heating piece 7a, centre circle heating piece 7b, outer ring heating piece 7c by inner ring changes its temperature, with control pedestal 20 upper surface surface temperature distribution and sizes, guarantee the base-plates surface uniform distribution of temperature.
Claims (2)
1. the heating unit of a gaseous phase deposition device reaction cavity, gaseous phase deposition device reaction cavity is by the gas A intake ducting (14) that is arranged at the heater system top, reactant gases B intake ducting (15), be arranged at reactant gases B intake ducting (15) terminal cushion chamber (18) and mouth spray (17), be arranged at the reaction chamber (21) under the mouth spray (17), and pedestal (20), graphite boat (19), well heater (31), reactor off-gas discharge line (23) is formed, it is characterized in that described well heater (31) is positioned at pedestal (20), heating piece (the 7a of well heater (31), 7b, 7c) be positioned on the heating piece supporting disk (30), heating piece supporting disk (30) is positioned at pedestal inside top below, electrode plate (22) is set to ground wire electrode plate (22a), inner ring firewire electrode dish (22b), centre circle firewire electrode dish (22c), four zones of outer ring firewire electrode dish (22d), heating piece (7a, 7b, end 7c) is respectively through ground line electrode joint pin (8a, 8b, 8c), ground drum (6a, 6b, 6c), ground wire conductive supporting post (2a, 2b, 2c), anchor clamps (11), ground wire electrode plate (22a) is connected with ground wire extraction electrode 25, heating piece (7a, 7b, the other end 7c) is respectively through firewire electrode joint pin (9a, 9b, 9c), live wire dish (5a, 5b, 5c), live wire conductive supporting post (1a, 1b, 1c), anchor clamps (11), firewire electrode dish (22b, 22c, 22d) with live wire extraction electrode (26,28,29) connect, supporting disk (30), live wire dish (5a, 5b, 5c), ground drum (6a, 6b, fixedly connected 6c) through connecting pillar stiffener (12), anchor clamps (11) are fixed on ground wire electrode plate (22a), firewire electrode dish (22b, 22c, 22d), heating piece supporting disk (30), ground drum (6a, 6b, 6c), live wire dish (5a, 5b, 5c), conductive supporting post (1a, 1b, 1c, 2a, 2b, 2c) grip through anchor clamps (11), thermal insulating disc (3a, 3b, 3c) be positioned at live wire dish (5a, 5b, below 5c), the interlayer of thermal insulating disc is fixedly connected through connecting pillar stiffener (4).
2. the heating unit of gaseous phase deposition device reaction cavity according to claim 1 is characterized in that described pedestal (20) is set to fixed or rotary-type.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009200702530U CN201406469Y (en) | 2009-04-10 | 2009-04-10 | Heating device for process chamber of vapor deposition equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN2009200702530U CN201406469Y (en) | 2009-04-10 | 2009-04-10 | Heating device for process chamber of vapor deposition equipment |
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| CN201406469Y true CN201406469Y (en) | 2010-02-17 |
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| CN2009200702530U Expired - Lifetime CN201406469Y (en) | 2009-04-10 | 2009-04-10 | Heating device for process chamber of vapor deposition equipment |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104254638A (en) * | 2012-04-04 | 2014-12-31 | 硅电子股份公司 | Device for depositing a layer on a semiconductor wafer by means of vapour deposition |
| WO2015014069A1 (en) * | 2013-08-02 | 2015-02-05 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Reaction chamber and mocvd device |
| CN105839074A (en) * | 2015-02-03 | 2016-08-10 | Lg电子株式会社 | Metal organic chemical vapor deposition apparatus for solar cell |
| WO2022077637A1 (en) * | 2020-10-13 | 2022-04-21 | 东部超导科技（苏州）有限公司 | Spraying plate, mocvd reaction system having spraying plate, and use method thereof |
-
2009
- 2009-04-10 CN CN2009200702530U patent/CN201406469Y/en not_active Expired - Lifetime
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104254638A (en) * | 2012-04-04 | 2014-12-31 | 硅电子股份公司 | Device for depositing a layer on a semiconductor wafer by means of vapour deposition |
| CN104254638B (en) * | 2012-04-04 | 2016-08-24 | 硅电子股份公司 | Equipment by gas deposition sedimentary on the semiconductor wafer |
| WO2015014069A1 (en) * | 2013-08-02 | 2015-02-05 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Reaction chamber and mocvd device |
| CN105839074A (en) * | 2015-02-03 | 2016-08-10 | Lg电子株式会社 | Metal organic chemical vapor deposition apparatus for solar cell |
| US10388820B2 (en) | 2015-02-03 | 2019-08-20 | Lg Electronics Inc. | Metal organic chemical vapor deposition apparatus for solar cell |
| WO2022077637A1 (en) * | 2020-10-13 | 2022-04-21 | 东部超导科技（苏州）有限公司 | Spraying plate, mocvd reaction system having spraying plate, and use method thereof |
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Legal Events
| Date | Code | Title | Description |
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| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CX01 | Expiry of patent term | ||
| CX01 | Expiry of patent term |
Granted publication date: 20100217 |