CN102766854B - Novel system for metal-organic chemical vapor deposition (MOCVD) - Google Patents
Novel system for metal-organic chemical vapor deposition (MOCVD) Download PDFInfo
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- CN102766854B CN102766854B CN 201210291765 CN201210291765A CN102766854B CN 102766854 B CN102766854 B CN 102766854B CN 201210291765 CN201210291765 CN 201210291765 CN 201210291765 A CN201210291765 A CN 201210291765A CN 102766854 B CN102766854 B CN 102766854B
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- load plate
- heap
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Abstract
The invention discloses a novel system for MOCVD. The system comprises an electric cabinet, a gas mixing box, a reaction chamber, a convey box and a tail gas treatment system, wherein the reaction chamber comprises a mutually communicated groove type rotary carrying disk, a base which is provided with a support and matched with the carrying disk, a rotary spraying head, an exhaust port and the like. The existing MOCVD is improved in structure, so that not only raw materials needed by epitaxy, but also the uniformity of MOCVD epitaxy is improved, the quality of the epitaxy is improved, and the problems of the small size and low yield of chips prepared through the existing MOCVD are solved.
Description
Technical field
[0001] the present invention relates to the new system of a kind of MOCVD, belong to the MOCVD apparatus field.
Background technology
MOCVD is Metal-Organic Chemical Vapor Deposition, the Chinese metal organic chemical vapor deposition, to using the hydride etc. of the organic compound of III family, II family element and V, VI family element as crystal growth source material, in the pyrolysis mode at the enterprising promoting the circulation of qi phase epitaxy of substrate, the thin layer monocrystal material of grow various III-V family, group Ⅱ-Ⅵ compound semiconductor and their multivariate solid solution.Tradition MOCVD reactive system comprises: reaction chamber, the spray dish for inputting reactant gases, the heating base, the well heater that pedestal is heated that are arranged at the reaction chamber bottom, be arranged on the reaction chamber bottom for discharging the venting port of byproduct of reaction.MOCVD equipment is dependence on import always for a long time, it is expensive, cause the semiconductor light source price to be arrested in a high position, unfavorable popularization, domestic owing to not grasping Technology of Key Equipments, greatly restrict conversely the raising of material technology and device performance, restricted further developing of China's photoelectronic industry, also become the bottleneck of the high-end opto-electronic device of development China.This just requires us can oneself grasp MOCVD equipment particularly design and the manufacturing technology of reactive system, realizes an important breakthrough of photoelectronic industry.
One of LED brilliant important indicator of heap of stone, be exactly the homogeneity of its thickness and component, in the MOCVD technology, grow certain thickness, and the uniform big area of component brilliant material of heap of stone, the speed of growth everywhere of substrate and the reactant concn that the arrives substrate uniformity of should trying one's best.
Summary of the invention
The object of the invention discloses a kind of new MOCVD system, so that for the LED chip especially making of large size LED chip, and saved crystalline substance of heap of stone starting material used, and improve brilliant homogeneity of heap of stone, guarantee brilliant quality of heap of stone.
System of the present invention comprises electric control box, gas mixed box, reaction chamber, transit box, exhaust treatment system, and described reaction chamber has comprised that the groove intercommunication rotates load plate, the belt supporting frame pedestal with the load plate coupling, rotary spray head, venting port etc.
The said groove intercommunication of the present invention rotates load plate as shown in Figure 1, and it has comprised graphical part 1, and brilliant substrate of heap of stone holds place 2, intercommunication groove 3.Graphical part 1 its as shielding gas spray place, so-called shielding gas is for the protection of reaction gas and year source gas, prevent in brilliant process of heap of stone reaction gas and to carry source gas excessive and avoid extraneous waste gas and disturb, reaction gas can fully be reacted with year source gas, economize in raw materials, improve crystalloid amount of heap of stone, another effect of shielding gas in addition, as the load plate rotational power, graphical part 1, described graphical its main purpose strengthens shielding gas to the reactive force on the load plate circumference, preferred rough figure; Build brilliant substrate and hold place 2, for placing brilliant substrate of heap of stone, its groove that is concave structure, depth of groove is less than or equal to brilliant front substrate thickness of heap of stone, is more than or equal to 1/2 brilliant back substrate thickness of heap of stone.For preventing that load plate is at the rotation process film flying; Intercommunication groove 3, all be furnished with groove around every brilliant substrate of heap of stone, and it discharges reaction zone in time for reactant gases and year source gas that will react, trench design makes it not disturb normal brilliant reaction of heap of stone on substrate when discharging waste gas, and as shown in Figure 2, groove is oval to trench section figure, 2x is that transverse is long, 2y is that minor axis is long, and 2z is that groove opening is wide, z<x<2z, z<y<2z, y<x, brilliant substrate diameter of heap of stone is D, D 1/13<z<D 2/13.Graphical part 1 with intercommunication groove 3 groove lowest parts on same level, or lower than the groove lowest part, with the exhaust gas emission of being more convenient for.The groove intercommunication rotates the load plate back side as shown in accompanying drawing 3, Fig. 5, and it has comprised protruding circular ring 4, with the load plate concentric, for as load plate turning effort point.
The belt supporting frame pedestal that the present invention is said and load plate mates is as shown in accompanying drawing 4, Fig. 5, pillar 5 is set above it to coincide with protruding circular ring 4 centers, for holding up load plate, it is unique resistance in graphite load plate rotation process, with load plate, to contact, reduces the contact surface of itself and load plate, reduce frictional force, the preferred graphite material of pillar 5, due to the extremely low frictional coefficient of graphite, more effectively reduce the frictional force of pillar 5 and graphite load plate with this.The pedestal back side is with electromagnetic heater, and load plate is rotated under to its circumference reactive force under comprehensive smoothly at protection gas and electromagnetic radiation power.
Described spray header and graphite load plate etc. are large, and upper and lower corresponding parallel with the graphite load plate, and the gas that the spray header place corresponding with the graphical part 1 of load plate sprays out becomes on-right angle with graphite plate, and these gases are shielding gas.Gas and the load plate of rest part spray meet at right angles.All gas all directly sprays on the graphite load plate, what the gas beam of spray header peripheral air outlet ejection produced in the horizontal direction to the graphite load plate is the power of circumferential direction, in brilliant process of heap of stone, the electromagnetic radiation heating has certain for buoyancy to the graphite load plate simultaneously, reduced the frictional force of graphite load plate and graphite base point of contact, effective merging through power, cause the graphite load plate to be rotated around center under the power effect of circumferential direction, keep spray header uniform rotation in horizontal plane in the spray process simultaneously, the opposite direction that direction and load plate rotate, impel and carry source gas, reaction gas can fully mix in reaction chamber.Spray header and graphite load plate keep reverse direction to rotate in brilliant process of heap of stone, and the gas that spray header is ejected can fully mix, and on substrate, reacts equably, has improved the homogeneity of crystalline substance of heap of stone, and has saved starting material.Control between turn at the 750-1250/min of speed summation of spray header and graphite load plate rotation in whole reaction process simultaneously.
For guaranteeing that shielding gas has reactive force on circumference to load plate, the angle of described shielding gas and graphite load plate, be less than 90 °, do not affect again crystalloid amount of heap of stone simultaneously, and its angle must be greater than α, α=arc tan
(h is the vertical range between graphite load plate and spray dish, r is the radius that graphite load plate substrate holds place's outset part, r+a is the distance of this periphery gas beam to the spray dish center of circle), when the angle of peripheral gas beam and graphite load plate more approaches α, peripheral gas beam is larger to the reactive force on the load plate circumference, when the angle of peripheral gas beam and load plate is less than or equal to α, what angle was less and the inside reactant gases, year source gas intersect is more, impact brilliant quality of heap of stone.So the angle of peripheral gas beam and graphite load plate is preferably greater than α, be less than 90 °.For guarantee shielding gas to load plate the force balance on circumference, the gas beam on each same circumference of shielding gas sprays on load plate also on the circumference corresponding with pneumatic outlet on the spray dish, and the gas beam on same circumference is identical with the angle of load plate.
The accompanying drawing explanation
Fig. 1 groove intercommunication rotates the load plate schematic diagram
Fig. 2 trench section schematic diagram
Fig. 3 groove intercommunication rotates the load plate schematic rear view
The belt supporting frame pedestal schematic diagram of Fig. 4 and load plate coupling
Fig. 5 rotates load plate, belt supporting frame pedestal contact position 4,5 sectional views
2 inches substrate trenches intercommunication load plates of Fig. 6
Fig. 7 spray header schematic diagram
4 inches, 6 inches combination groove intercommunication load plate schematic diagram of Fig. 8
1 is the graphical part of load plate, and 2 for brilliant substrate of heap of stone holds place, and 3 is the intercommunication groove, and 4 is protruding circular ring, and 5 for propping the pillar of load plate, and 6 is shielding gas spray place, and 7 for carrying source gas, reactant gases spray place.
Embodiment
Embodiment in the present invention, must not be as the restriction of claim protection domain only for the present invention is further explained.
As shown in Figure 6, for placing the load plate of two inches substrates, comprise graphical part 1; brilliant substrate lay down location 2 of heap of stone, intercommunication groove 3, the spray header parallel with load plate is as shown in Figure 7; comprise the shielding gas spray place 6 corresponding with the graphical part 1 of load plate, and carry source gas, reactant gases spray place 7.Graphical part 1 is evenly regular convex-concave pattern; guarantee that the shielding gas on same circumference sprays the suffered power of graphical part all equally; spray gas flow, flow velocity on shielding gas spray place 6 same circumference; the spray angle angle of load plate (gas beam with) is all the same; its angle is less than 90 °; be greater than α, α=arc tan
(h is the vertical range between graphite load plate and spray dish, r is the radius that graphite load plate substrate holds place's outset part, r+a is the distance of this periphery gas beam to the spray dish center of circle), and spray on load plate also on same circumference, simultaneously spray header remains in the spray process and the rightabout rotation of load plate, control the rotating speed of spray header, guarantee spray header rotating speed and load plate rotating speed and the turn/min 1000 ± 100.Brilliant substrate lay down location depth of groove of heap of stone is less than or equal to brilliant front substrate thickness of heap of stone, is more than or equal to 1/2 brilliant back substrate thickness of heap of stone, and the depth of groove of each substrate lay down location equates, guarantees that each substrate heating temperature equates in reaction process.The intercommunication groove, as shown in Figure 2, groove is elliptical section to its section, and major axis 2x is 1.2 ㎝, and minor axis 2y is 1.0 ㎝, and the wide 2z of opening is 0.9cm.Graphical part 1 is not higher than the lowest part of groove 3.
As shown in Figure 8; 4 inches, 6 inches combination groove intercommunication load plate schematic diagram; comprise graphical part 1; brilliant substrate lay down location 2 of heap of stone; intercommunication groove 3, build brilliant substrate lay down location and comprised 16 inches substrate lay down location of 84 inches substrate lay down locations, and the spray header parallel with load plate as shown in Figure 7; comprise the shielding gas spray place 6 corresponding with the graphical part 1 of load plate, and carry source gas, reactant gases spray place 7.Graphical part 1 is evenly regular convex-concave pattern; guarantee that the shielding gas on same circumference sprays the suffered power of graphical part all equally; spray gas flow, flow velocity on shielding gas spray place 6 same circumference; the spray angle angle of load plate (gas beam with) is all the same; its angle is less than 90 °; be greater than α, α=arc tan
(h is the vertical range between graphite load plate and spray dish, r is the radius that graphite load plate substrate holds place's outset part, r+a is the distance of this periphery gas beam to the spray dish center of circle), and on spray and load plate also on same circumference, simultaneously spray header remains in the spray process and the rightabout rotation of load plate, control the rotating speed of spray header, guarantee spray header rotating speed and load plate rotating speed and the turn/min 1100 ± 50.Brilliant substrate lay down location depth of groove of heap of stone is less than or equal to brilliant front substrate thickness of heap of stone, is more than or equal to 1/2 brilliant back substrate thickness of heap of stone, and the depth of groove of 84 inches substrate lay down locations equates.The intercommunication groove, as shown in Figure 2, groove is elliptical section to its section, and 4 inches substrate its major axis of groove 2x on every side are 3.0 ㎝, and minor axis 2y is 2.8 ㎝, and the wide 2z of opening is 2.0cm; 6 inches substrate its major axis of groove 2x on every side are 3.6 ㎝, and minor axis 2y is 2.8 ㎝, and the wide 2z of opening is 2.6cm.Graphical part 1 is not higher than the lowest part of groove 3.
Claims (7)
1.
a kind of MOCVD system, comprise electric control box, gas mixed box, reaction chamber, transit box, exhaust treatment system, it is characterized in that in reaction chamber being that the groove intercommunication rotates load plate for the load plate of placing brilliant substrate of heap of stone, comprised graphical part (1), brilliant substrate of heap of stone holds place (2), intercommunication groove (3), brilliant substrate of heap of stone holds place (2) for concave grooves, intercommunication groove (3) is arranged in brilliant substrate of heap of stone and holds place (2) on every side, further comprise rotary spray head in reaction chamber, for spraying gas used in reaction chamber, described spray header and graphite load plate etc. are large, and upper and lower corresponding parallel with the graphite load plate, the gas that the spray header place corresponding with the graphical part of load plate (1) sprays out is that shielding gas becomes on-right angle with graphite plate, gas and the load plate of rest part spray meet at right angles, described on-right angle is less than 90 ° and be greater thanarc tan
, h is the vertical range between graphite load plate and spray header, and r is the radius that graphite load plate substrate holds place's outset part, and the peripheral gas beam that r+a is the spray header spray is to the distance in the spray header center of circle.
2.
system claimed in claim 1, is characterized in that intercommunication groove (3) cross section is various figures.
3.
system claimed in claim 1, is characterized in that intercommunication groove (3) cross section is for oval, and 2x is that transverse is long, and 2y is that minor axis is long, and 2z is that groove opening is wide, z<x<2z, and z<y<2z, y<x, brilliant substrate diameter of heap of stone is D, D 1/13<z<D 2/13.
4.
the described system of claim 1-3 any one, is characterized in that graphical part (1) and intercommunication groove (3) groove lowest part are on same level, or lower than the groove lowest part.
5.
the described system of claim 1-3 any one, is characterized in that the opposite direction that rotary spray head and graphite load plate rotate.
6.
the described system of claim 1-3 any one, is characterized in that between turn at the 750-1250/min of speed summation of rotary spray head and the rotation of graphite load plate.
7.
system claimed in claim 1, is characterized in that the gash depth at the brilliant substrate place of holding (2) of heap of stone is less than or equal to brilliant front substrate thickness of heap of stone, is more than or equal to 1/2 brilliant back substrate thickness of heap of stone.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN 201210291765 CN102766854B (en) | 2012-08-16 | 2012-08-16 | Novel system for metal-organic chemical vapor deposition (MOCVD) |
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| Application Number | Priority Date | Filing Date | Title |
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| CN 201210291765 CN102766854B (en) | 2012-08-16 | 2012-08-16 | Novel system for metal-organic chemical vapor deposition (MOCVD) |
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| CN102766854A CN102766854A (en) | 2012-11-07 |
| CN102766854B true CN102766854B (en) | 2013-06-05 |
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Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112144113A (en) * | 2019-06-28 | 2020-12-29 | 聚灿光电科技股份有限公司 | Graphite carrying disc and MOCVD (metal organic chemical vapor deposition) reaction device with same |
| CN117165924B (en) * | 2023-11-03 | 2024-02-02 | 江苏微导纳米科技股份有限公司 | Spraying device, treatment equipment and spraying process of treatment equipment |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2277748A (en) * | 1993-04-22 | 1994-11-09 | Mitsubishi Electric Corp | Substrate holder for MOCVD and MOCVD apparatus |
| CN101517704A (en) * | 2006-09-16 | 2009-08-26 | 派松尼克斯株式会社 | Apparatus of chemical vapor deposition with a showerhead regulating injection velocity of reactive gases positively and method thereof |
| CN101824606A (en) * | 2010-05-12 | 2010-09-08 | 中国科学院苏州纳米技术与纳米仿生研究所 | Vertical shower type MOCVD reactor |
| CN101191201B (en) * | 2006-12-01 | 2010-12-15 | 广东昭信半导体装备制造有限公司 | Reaction cavity for metal organic substance chemical gaseous phase deposition device |
| CN102199761A (en) * | 2011-05-10 | 2011-09-28 | 绿种子能源科技股份有限公司 | Thin film deposition apparatus |
| CN102560429A (en) * | 2012-03-13 | 2012-07-11 | 中微半导体设备(上海)有限公司 | Metal organic vapor phase deposition device |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI398545B (en) * | 2010-04-29 | 2013-06-11 | Chi Mei Lighting Tech Corp | Metal-organic chemical vapor deposition apparatus |
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Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2277748A (en) * | 1993-04-22 | 1994-11-09 | Mitsubishi Electric Corp | Substrate holder for MOCVD and MOCVD apparatus |
| CN101517704A (en) * | 2006-09-16 | 2009-08-26 | 派松尼克斯株式会社 | Apparatus of chemical vapor deposition with a showerhead regulating injection velocity of reactive gases positively and method thereof |
| CN101191201B (en) * | 2006-12-01 | 2010-12-15 | 广东昭信半导体装备制造有限公司 | Reaction cavity for metal organic substance chemical gaseous phase deposition device |
| CN101824606A (en) * | 2010-05-12 | 2010-09-08 | 中国科学院苏州纳米技术与纳米仿生研究所 | Vertical shower type MOCVD reactor |
| CN102199761A (en) * | 2011-05-10 | 2011-09-28 | 绿种子能源科技股份有限公司 | Thin film deposition apparatus |
| CN102560429A (en) * | 2012-03-13 | 2012-07-11 | 中微半导体设备(上海)有限公司 | Metal organic vapor phase deposition device |
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