CN103849855A - Chemical vapor deposition equipment and carrying mechanism for chemical vapor deposition equipment - Google Patents
Chemical vapor deposition equipment and carrying mechanism for chemical vapor deposition equipment Download PDFInfo
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- CN103849855A CN103849855A CN201210519944.0A CN201210519944A CN103849855A CN 103849855 A CN103849855 A CN 103849855A CN 201210519944 A CN201210519944 A CN 201210519944A CN 103849855 A CN103849855 A CN 103849855A
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Abstract
The invention discloses chemical vapor deposition equipment which comprises a cavity body, wherein a vapor feeding device and a carrying mechanism which are relatively arranged are respectively positioned at the top and the bottom of the cavity body so as to limit a reaction region together; the carrying mechanism comprises a plurality of substrate supporting disks for supporting substrates to be treated and a plurality of heaters respectively positioned below each substrate supporting disk; each heater is used for heating each corresponding substrate supporting disk; the carrying mechanism further comprises a liner plate in which open holes corresponding to the number of the substrate supporting disks are formed; the substrate supporting disks are correspondingly arranged in the open holes in a sleeving manner; the carrying mechanism also comprises a base and a base rotating shaft connected below the base; and the heaters are connected between the substrate supporting disks on the base and the base through supporting shafts. According to the equipment, the large substrate supporting disk is divided into the plurality of small substrate supporting disks, so that the heating uniformity of the small substrate supporting disks is excellent. Thus, the substrates are more uniformly heated, namely, the acceptability of extension chips is improved. The invention further discloses the carrying mechanism for the chemical vapor deposition equipment.
Description
Technical field
The present invention relates to chemical vapor deposition (CVD) technical field, specifically, relate to a kind of chemical vapor depsotition equipment and the load carrier for this equipment thereof.
Background technology
MOCVD(Metal-Organic Chemical Vapor Deposition, organometallics chemical gaseous phase deposition) be a kind of new chemical vapour phase epitaxy depositing operation growing up on the basis of vapor phase epitaxial growth (VPE).MOCVD is using the hydride of the organic compound of III family, II family element and V, VI family element etc. as crystal growth starting material, in pyrolysis mode at the enterprising promoting the circulation of qi phase epitaxy of substrate, the thin layer monocrystal material of grow various III-V family, group Ⅱ-Ⅵ compound semiconductor and their multivariate solid solution.
Below the principle of work of existing MOCVD equipment is described.Please refer to Fig. 1, Fig. 1 illustrates the structural representation of the reaction chamber of existing MOCVD equipment.
In chamber 10, be formed with the spray header 11 and the graphite plate 12 that are oppositely arranged.Spray header 11 is provided with multiple apertures, for reactant gases is provided.Graphite plate 12 is provided with multiple substrates 121, and the material of substrate 121 is generally sapphire.The below of graphite plate 12 is provided with well heater 13, and well heater 13 heats graphite plate 12, and graphite plate 12 intensification of being heated, can heat substrate 121 with thermal radiation and heat exchange pattern.Because substrate 121 is placed in graphite plate 12, the two contact, therefore graphite plate 12 to the heating of substrate 121 take thermal conduction as main.In the course of the work, reactant gases enters into the conversion zone (being generally the surperficial position near substrate 121) of graphite plate 12 tops from the aperture of spray header 11, substrate 121 is because the thermal conduction heating of graphite plate 12 has certain temperature, thereby this temperature makes to carry out between reactant gases chemical reaction, and then at substrate 121 surface deposition epitaxial material layers.
Along with processing, the quantity of substrate 121 increases or the size of substrate 121 strengthens, the size of the graphite plate 12 of carrier substrate 121 is increasing, the size that is used for the well heater 13 that heats graphite plate 12 also becomes large, but larger well heater 13 is more difficult, increasing graphite plate 12 is carried out to homogeneous heating, make to be arranged between the middle part of graphite plate 12 and the substrate at edge 121 and occur temperature head, cause the uniformity decreases of epitaxial material layer, the yield of extension chip is on the low side.
Summary of the invention
A kind of chemical vapor depsotition equipment and the load carrier for this equipment thereof are the object of the present invention is to provide, improve the homogeneity to graphite plate heating, and then improved the homogeneity of the heating to substrate, thereby the homogeneity of epitaxial material layer and the yield of extension chip are improved.
For achieving the above object, the invention provides a kind of chemical vapor depsotition equipment, comprise cavity, be arranged at the diffuser at described cavity top, and be arranged at the load carrier of described cavity bottom, described diffuser and described load carrier are oppositely arranged, and jointly limit the reaction zone between described diffuser and described load carrier, described load carrier comprises some substrate supports dishes and corresponding some well heaters, described substrate supports dish is used for supporting pending substrate, described well heater is arranged on below described substrate supports dish, described some well heaters are the described some substrate supports dishes of corresponding heating respectively.
Further, the separate adjusting of the heating power of described some well heaters.
Further, described load carrier also comprises base and is connected in the base shaft below base, described substrate supports dish is connected on described base by back shaft, described well heater is placed between described substrate supports dish and described base, described base shaft drives described base to rotate, and makes described some substrate supports armors make revolution motion around described base shaft.
Further, described load carrier also comprises transmission mechanism, described in described actuator drives, back shaft rotates, thereby drive described substrate supports dish to make spinning motion, described transmission mechanism comprises the first gear, the second gear and the first gear shaft, described the second gear runs through described base and described base shaft is fixed on described cavity bottom, described the first gear is fixed on described base and with described the second gear and is engaged by described the first gear shaft, and described the first gear is fixedly connected with described back shaft.
Further, described load carrier also comprises liner plate, offers the perforate corresponding with described substrate supports dish quantity on it, and described substrate supports dish is sheathed in perforate.
Further, the upper surface of the upper surface of described liner plate and described substrate supports dish maintains an equal level.
Further, the material of described liner plate is lagging material.
Further, described substrate supports dish is graphite plate.
Further, on described substrate supports dish, be only provided with a substrate.
Further, described diffuser is a spray header.
Another object of the present invention also provides a kind of load carrier for chemical vapor depsotition equipment, described load carrier comprises some substrate supports dishes and corresponding some well heaters, described substrate supports dish is used for supporting pending substrate, described well heater correspondence is arranged on below described substrate supports dish, and described some well heaters are the described some substrate supports dishes of corresponding heating respectively.
Further, the separate adjusting of the heating power of described some well heaters.
Further, described load carrier also comprises base and is connected in the base shaft below base, described substrate supports dish is connected on described base by back shaft, described well heater is placed between described substrate supports dish and described base, described base shaft drives described base to rotate, and makes described some substrate supports armors make revolution motion around described base shaft.
Further, described load carrier also comprises transmission mechanism, described in described actuator drives, back shaft rotates, thereby drive described substrate supports dish to make spinning motion, described transmission mechanism comprises the first gear, the second gear and the first gear shaft, wherein, described the second gear runs through described base and described base shaft is fixed on described cavity bottom, described the first gear is fixed on described base and with described the second gear and is engaged by described the first gear shaft, and described the first gear is fixedly connected with described back shaft.
Further, described load carrier also comprises liner plate, offers the perforate corresponding with described substrate supports dish quantity on it, and described substrate supports dish is sheathed in perforate.
Further, the upper surface of the upper surface of described liner plate and described substrate supports dish maintains an equal level.
Further, the material of described liner plate is lagging material.
Further, described substrate supports dish is graphite plate.
Further, on described substrate supports dish, be only provided with a substrate.
The invention has the advantages that, the load carrier of chemical vapor depsotition equipment of the present invention carries in the reaction chamber that multiple graphite plates are placed in the equipment with this load carrier, each graphite plate has this graphite plate of heater heats, by large graphite plate being decomposed into multiple little graphite plates, owing to using the little graphite plate of the corresponding heating of little well heater, the control of the temperature homogeneity of little well heater to little graphite plate is better than the control of the temperature homogeneity of large well heater to large graphite plate, each little graphite plate in heat-processed can be heated evenly more, and then make to be placed in multiple substrates on the regional (comprising the center and peripheral of graphite plate) on graphite plate and be heated and more easily reach even, in addition, the base shaft of this load carrier can drive base to rotate, make multiple graphite plates make revolution motion around base shaft, reactant gases can be uniformly distributed between each graphite plate, base shaft drives back shaft to carry out rotation with respect to base by transmission mechanism again, make each graphite plate with respect to base rotation, can further improve the being heated evenly property of each graphite plate, the spinning motion of each graphite plate has further improved the distributing homogeneity on the substrate of reactant gases on each graphite plate simultaneously, the upper surface of the liner plate of this load carrier and the upper surface of graphite plate maintain an equal level again, thereby make airflow field, temperature field and the concentration field at graphite plate edge more even, have improved the homogeneity of epitaxial material layer and the yield of extension chip.
Accompanying drawing explanation
Fig. 1 is the structural representation of the reaction chamber of existing MOCVD equipment.
Fig. 2 is the structural representation of the reaction chamber of the chemical vapor depsotition equipment of the embodiment of the present invention.
Fig. 3 is the vertical view of the load carrier of the chemical vapor depsotition equipment of the embodiment of the present invention.
Fig. 4 is the structural representation of the transmission mechanism of the load carrier of the embodiment of the present invention.
Embodiment
Technique means and the effect thereof taked in order to set forth better the present invention, be described in detail below in conjunction with embodiments of the invention and accompanying drawing thereof, and wherein, identical label represents identical parts all the time.
Fig. 2 is the structural representation of the reaction chamber of the chemical vapor depsotition equipment of the embodiment of the present invention.As shown in Figure 2, the reaction chamber of this chemical vapor depsotition equipment comprises cavity 300, is arranged at the diffuser at cavity 300 tops, and diffuser passes into reactant gases with spray header 200 to reaction chamber conventionally; Also comprise the load carrier 100 that is arranged at cavity 300 bottoms, and spray header 200 is oppositely arranged with load carrier 100, and jointly limit the conversion zone between spray header 200 and load carrier 100, load carrier 100 comprises some substrate supports dishes and some well heaters 5, preferably, substrate supports dish is graphite plate 3, but is not limited to this; Each graphite plate 3 is for supporting pending substrate 8, each well heater 5 correspondences are separately positioned on the side that each graphite plate 3 deviates from spray header 200, it is the below of graphite plate 3, each well heater 5 heats each self-corresponding graphite plate 3, and the heating power of each well heater 5 can separate adjusting, to can control better the temperature of each graphite plate 3.
Alternatively, well heater 5 can be resistance heater, for example tungsten heater, and well heater 5 can also be induction (RF) well heater, but is not limited to this, for example, can be also that other can be embodied as the well heater that graphite plate 3 heats.
Fig. 3 is the vertical view of the load carrier of the chemical vapor depsotition equipment of the embodiment of the present invention.As shown in Figure 3, graphite plate 3 is sheathed in the perforate 61 on liner plate 6, the quantity of graphite plate 3 is corresponding one by one with the quantity of perforate 61, in Fig. 3, the quantity of graphite plate 3 is four, but be not limited to this, for example, can be two, three, five, six, seven, eight or more, be as the criterion to adjust the quantity of graphite plate 3 with the reaction chamber size of MOCVD equipment in reality, the space of for example reaction chamber is large, and the quantity of graphite plate 3 can be made as eight or more.The quantity of the substrate 8 that each graphite plate 3 is provided with can be one or more, and the quantity of being preferably located at the substrate 8 on each graphite plate 3 is one, and the material of substrate 8 can be sapphire, silicon carbide etc.Gap between perforate 61 and the graphite plate 3 of liner plate 6 can guarantee under the prerequisite that graphite plate 3 freely rotates, should be as far as possible little, and in the present invention, the gravel size decision in gap ground is not more than 4 millimeters.
Please also refer to Fig. 2, Fig. 4, Fig. 4 is the structural representation of the transmission mechanism of the load carrier of the embodiment of the present invention.As shown in Figure 4, actuator drives back shaft 4 rotates, thereby drives the graphite plate 3 shown in Fig. 2 to make spinning motion; Transmission mechanism is made up of the first gear 11, the first gear shaft 12 and the second gear 21, the second gear 21 is formed by a cap gear body and a cylinder one, its cylinder runs through base 1 and base shaft 2 and is fixedly connected on the bottom of cavity, cap gear body engages with the first gear 11, the first gear 11 is fixed on base 1 by the first gear shaft 12, and the first gear 11 is fixedly connected with back shaft 4; In the time that base shaft 2 drives base 1 to rotate, the first gear shaft 12 is followed base 1 and is rotated, thereby the first gear 11 is rotated relative to the second gear 21, because the first gear 11 and the second gear 12 engage, thereby the first gear 11 is rotated relative to base 1, and then drive back shaft 4 rotate and graphite plate 3 is rotated relative to base 1.
Alternatively, transmission mechanism also can be arranged on the drive unit on base 1, the end of back shaft 4 is arranged on drive unit to be arranged on base 1, when base shaft 2 drives base 1 and graphite plate 3 together when revolution motion, drive back shaft 4 to rotate and then drive graphite plate 3 with respect to base 1 spinning motion by this drive unit; Wherein, drive unit can be electro-motor or pneumatic motor.
Please also refer to Fig. 2, Fig. 4, in the time using the chemical vapor depsotition equipment of the embodiment of the present invention, be provided with multiple aperture (not shown) by spray header 200 and pass into reactant gases, load carrier 100 carries several graphite plates 3, on graphite plate 3, be placed with at least one substrate 8, the well heater 5 of being located at graphite plate 3 belows heats graphite plate 3, graphite plate 3 intensification of being heated, can heat substrate 8 with thermal radiation and heat exchange pattern, the rotation of base shaft 2 makes graphite plate 3, well heater 5, base 1 is made revolution motion around base shaft 2, thereby reactant gases can be uniformly distributed between each graphite plate 3, simultaneously, in this process, because driving back shaft 4, the rotation of base shaft 2 rotates, and then drive graphite plate 3 to make spinning motion with respect to base 1, in addition, because several well heaters 5 that are placed on base 1 maintain static with respect to base 1, make the well heater 5 can be to heating more equably with respect to the graphite plate 3 of base 1 rotation, and then the being heated evenly property of raising substrate 8, the spinning motion of graphite plate 3 has further improved the distributing homogeneity of reactant gases on substrate 8 simultaneously.In the chemical vapor depsotition equipment working process of the embodiment of the present invention, reactant gases enters into the conversion zone (being generally the position near substrate 8 surfaces) of graphite plate 3 tops from multiple aperture (not shown) of spray header 200, substrate 8 is because the thermal conduction heating of well heater 5 has certain temperature, thereby this temperature makes to carry out between reactant gases chemical reaction, and then at substrate 8 surface deposition epitaxial material layers.
In sum, chemical vapor depsotition equipment of the present invention and for the load carrier of this equipment, the load carrier with multiple graphite plates is placed in reaction chamber, each graphite plate has this graphite plate of heater heats, by large graphite plate being decomposed into multiple little graphite plates, owing to using the little graphite plate of the corresponding heating of little well heater, the control of the temperature homogeneity of little well heater to little graphite plate is better than the control of the temperature homogeneity of large well heater to large graphite plate, each little graphite plate in heat-processed can be heated evenly more, and then make to be placed in multiple substrates on graphite plate regional (comprising the center and peripheral of graphite plate) and be heated and more easily reach even, in addition, the base shaft of this load carrier can drive base to rotate, make multiple graphite plates make revolution motion around base shaft, reactant gases can be uniformly distributed between each graphite plate, base shaft drives back shaft to carry out rotation with respect to base by transmission mechanism again, make each graphite plate with respect to base rotation, can further improve the being heated evenly property of each graphite plate, the spinning motion of each graphite plate has further improved the distributing homogeneity on the substrate of reactant gases on each graphite plate simultaneously, the upper surface of the liner plate of this load carrier and the upper surface of graphite plate maintain an equal level again, thereby make airflow field, temperature field and the concentration field at graphite plate edge more even, have improved the homogeneity of epitaxial material layer and the yield of extension chip.
The present invention is described by above-mentioned related embodiment, but above-described embodiment is only for implementing example of the present invention, does not limit the scope of the invention.Modification in every spirit and category being contained in claims and impartial setting include within the scope of the invention.
Claims (19)
1. a chemical vapor depsotition equipment, comprise cavity, be arranged at the diffuser at described cavity top, and be arranged at the load carrier of described cavity bottom, described diffuser and described load carrier are oppositely arranged, and jointly limit the reaction zone between described diffuser and described load carrier, it is characterized in that, described load carrier comprises some substrate supports dishes and corresponding some well heaters, described substrate supports dish is used for supporting pending substrate, described well heater is arranged on below described substrate supports dish, described some well heaters are the described some substrate supports dishes of corresponding heating respectively.
2. chemical vapor depsotition equipment according to claim 1, is characterized in that, the separate adjusting of heating power of described some well heaters.
3. chemical vapor depsotition equipment according to claim 1, it is characterized in that, described load carrier also comprises base and is connected in the base shaft below base, described substrate supports dish is connected on described base by back shaft, described well heater is placed between described substrate supports dish and described base, described base shaft drives described base to rotate, and makes described some substrate supports armors make revolution motion around described base shaft.
4. chemical vapor depsotition equipment according to claim 3, it is characterized in that, described load carrier also comprises transmission mechanism, described in described actuator drives, back shaft rotates, thereby drive described substrate supports dish to make spinning motion, described transmission mechanism comprises the first gear, the second gear and the first gear shaft, described the second gear runs through described base and described base shaft is fixed on described cavity bottom, described the first gear is fixed on described base and with described the second gear and is engaged by described the first gear shaft, described the first gear is fixedly connected with described back shaft.
5. chemical vapor depsotition equipment according to claim 1, is characterized in that, described load carrier also comprises liner plate, offers the perforate corresponding with described substrate supports dish quantity on it, and described substrate supports dish is sheathed in perforate.
6. chemical vapor depsotition equipment according to claim 5, is characterized in that, the upper surface of the upper surface of described liner plate and described substrate supports dish maintains an equal level.
7. according to the chemical vapor depsotition equipment described in claim 5 or 6, it is characterized in that, the material of described liner plate is lagging material.
8. according to the chemical vapor depsotition equipment described in any one in claim 1 to 6, it is characterized in that, described substrate supports dish is graphite plate.
9. chemical vapor depsotition equipment according to claim 1, is characterized in that, is only provided with a substrate on described substrate supports dish.
10. chemical vapor depsotition equipment according to claim 1, is characterized in that, described diffuser is a spray header.
11. 1 kinds of load carriers for chemical vapor depsotition equipment, it is characterized in that, described load carrier comprises some substrate supports dishes and corresponding some well heaters, described substrate supports dish is used for supporting pending substrate, described well heater correspondence is arranged on below described substrate supports dish, and described some well heaters are the described some substrate supports dishes of corresponding heating respectively.
12. load carriers according to claim 11, is characterized in that, the separate adjusting of heating power of described some well heaters.
13. load carriers according to claim 11, it is characterized in that, described load carrier also comprises base and is connected in the base shaft below base, described substrate supports dish is connected on described base by back shaft, described well heater is placed between described substrate supports dish and described base, described base shaft drives described base to rotate, and makes described some substrate supports armors make revolution motion around described base shaft.
14. load carriers according to claim 13, it is characterized in that, described load carrier also comprises transmission mechanism, described in described actuator drives, back shaft rotates, thereby drive described substrate supports dish to make spinning motion, described transmission mechanism comprises the first gear, the second gear and the first gear shaft, wherein, described the second gear runs through described base and described base shaft is fixed on described cavity bottom, described the first gear is fixed on described base and with described the second gear and is engaged by described the first gear shaft, described the first gear is fixedly connected with described back shaft.
15. load carriers according to claim 11, is characterized in that, described load carrier also comprises liner plate, offer the perforate corresponding with described substrate supports dish quantity on it, and described substrate supports dish is sheathed in perforate.
16. load carriers according to claim 15, is characterized in that, the upper surface of the upper surface of described liner plate and described substrate supports dish maintains an equal level.
17. according to the load carrier described in claim 15 or 16, it is characterized in that, the material of described liner plate is lagging material.
18. according to claim 11 to the load carrier described in any one in 16, it is characterized in that, described substrate supports dish is graphite plate.
19. load carriers according to claim 11, is characterized in that, are only provided with a substrate on described substrate supports dish.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201210519944.0A CN103849855A (en) | 2012-12-06 | 2012-12-06 | Chemical vapor deposition equipment and carrying mechanism for chemical vapor deposition equipment |
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| CN201210519944.0A CN103849855A (en) | 2012-12-06 | 2012-12-06 | Chemical vapor deposition equipment and carrying mechanism for chemical vapor deposition equipment |
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| CN103849855A true CN103849855A (en) | 2014-06-11 |
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| CN106471153A (en) * | 2014-07-17 | 2017-03-01 | 应用材料公司 | The method and apparatus criticizing deposition reactor deposit cobalt layers using rotating disc type |
| CN113804046A (en) * | 2020-06-15 | 2021-12-17 | 拓荆科技股份有限公司 | Low-cost active temperature control spray head |
| CN114000191A (en) * | 2021-10-29 | 2022-02-01 | 华中科技大学 | System and method for uniformly heating molecular beam epitaxy |
| CN114686857A (en) * | 2020-12-30 | 2022-07-01 | 中微半导体设备(上海)股份有限公司 | Substrate tray and reactor with same |
| CN115652417A (en) * | 2022-12-28 | 2023-01-31 | 埃特曼(苏州)半导体技术有限公司 | Device and method for optimizing film epitaxial growth uniformity and epitaxial growth equipment |
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Application publication date: 20140611 |