CN204982046U - MO CVD equipment and heating device thereof - Google Patents
MO CVD equipment and heating device thereof Download PDFInfo
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- CN204982046U CN204982046U CN201520754264.6U CN201520754264U CN204982046U CN 204982046 U CN204982046 U CN 204982046U CN 201520754264 U CN201520754264 U CN 201520754264U CN 204982046 U CN204982046 U CN 204982046U
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Abstract
The utility model provides a MO CVD equipment and heating device thereof for improve each regional temperature homogeneity of substrate plummer upper surface. Wherein heating device be located substrate plummer below and with the substrate plummer one section distance of being separated by in vertical orientation to the mode heating of radiation the substrate plummer, heating device includes a continuous radiation heating silk, a radiation heating silk bale is drawn together: two extreme points for heating power supply's positive and negative electrode is connected to the electricity, a radiation portion for connecting these two extreme points, radiation portion is including a plurality of arc radiant sections that are the concentric circles distribution and the connecting portion that are used for connecting different arc radiant sections, to each solitary arc radiant section, its unit length's inside everywhere resistivity equals, at least, there are two such arc radiant sections - first arc radiant section and second arc radiant section, their unit length's resistivity imbalance.
Description
Technical field
The utility model relates to metal organic chemical vapor deposition (MOCVD) equipment, also relates to the heating unit for this equipment.
Background technology
Epitaxial growth of semiconductor material is grown on substrate by the mode of chemical vapour deposition by many semiconductor elements, and above-mentioned substrate is discoid polycrystalline silicon material substantially, is commonly referred to as wafer.When carrying out this processing procedure, wafer can maintain high temperature and be exposed in the environment of one or more chemical precursor, and above-mentioned precursor can be carry out over the substrate surface reacting or decomposing, and produces the settling meeting expectation.Precursor for chemical vapour deposition generally comprises metal, such as metal hydride, halogenide, halogen element hydride and organometallic compound.Above-mentioned precursor can with such as the carrier gas of nitrogen is combined, but do not produce and react significantly, above-mentioned carrier gas and the by product do not wanted can be discharged by the air outlet of reaction chamber.
Utilize metal organic chemical vapor deposition (MOCVD) semiconductor compound layers can be generated continuously, so as to making the element formed by three or five race's semiconductor materials.Three or five race's semiconductor materials comprise photodiode (LEDs) and other is such as the high-effect wafer of laser diode, optical pickocff and field-effect transistor.By Organogallium compound and ammonia being reacted on the substrate being such as sapphire or Silicon Wafer, this element can be formed.When cvd nitride gallium and related compound, wafer can remain between 500 DEG C to 1200 DEG C, therefore generally heater assembly can be heated between 1000 DEG C to 2200 DEG C, so as to reaching silicon wafer process temperature.Such as many process parameter of pressure and gas flow rate also need to control, so as to reaching the crystal growing process meeting expectation.After forming all semiconductor layers, and at electrical contact by after testing electrical property, wafer can cut into independent element.
On substrate bearing platform in MOCVD reactor usually together with time load multiple substrate, to improve working (machining) efficiency.This makes the heating system of substrate bearing platform be faced with more harsh challenge: must ensure that the substrate in all regions, substrate bearing platform surface is all in suitable temperature range.Otherwise, be in the material that the substrate of inappropriate temperature province grows and often there is mass defect.
Utility model content
According to an aspect of the present utility model, a kind of heating unit for MOCVD device is provided, described heating unit to be positioned at below substrate bearing platform and to be separated by a segment distance with described substrate bearing platform in the vertical direction, described substrate bearing platform is heated in the mode of radiation, described heating unit comprises continuous print first radiation heating silk, and described first radiation heating silk comprises:
Two end points, for being electrically connected the positive and negative electrode of heating power supply;
For connecting the Department of Radiation of these two end points, described Department of Radiation comprises multiple arc radiation section of distribution and the connection section for connecting different arc radiation section in concentric(al) circles; For the arc radiation section that each is independent, the resistivity of the unit length of its various places inside is equal; At least there are two such arc radiation sections---the first arc radiation section and the second arc radiation section, the resistivity of their unit length is unequal.
Optionally, each arc radiation section is made up of identical material, makes the resistivity of the unit length between the first arc radiation section and the second arc radiation section unequal by making arc radiation section have different width.
Optionally, each arc radiation section is made up of identical material, makes the resistivity of the unit length between the first arc radiation section and the second arc radiation section unequal by making arc radiation section have different thickness.
Optionally, each arc radiation section is made up of identical material, has different width and thickness by making arc radiation section and makes the resistivity of the unit length between the first arc radiation section and the second arc radiation section unequal.
Optionally, each arc radiation section includes the main part be manufactured from the same material, a seal coat on main part in first and second arc radiation section is made by (1), another is seal coat not, or (2) make first and second arc radiation section on main part, cover different coatings, and make the resistivity of the unit length between the first arc radiation section and the second arc radiation section unequal.
Optionally, the main part of first and second arc radiation section has different width or/and thickness, to expand their unequal degree in resistance per unit length rate further.
Optionally, described first radiation heating silk is positioned at same plane on the whole.
Optionally, also comprise the second radiation heating silk, the two ends of the second radiation heating silk are used for being electrically connected with the positive and negative electrode of heating power supply, and described second radiation heating silk is positioned at the first radiation heating silk periphery and surrounds the first radiation heating silk.
Optionally, described second radiation heating silk and described first radiation heating silk are positioned at same plane.
Optionally, described second radiation heating silk is the arc structure of individual pen.
Optionally, also comprise the 3rd radiation heating silk, the two ends of the 3rd radiation heating silk are used for being electrically connected with the positive and negative electrode of heating power supply, described 3rd radiation heating silk around the rotating shaft for supporting substrate plummer, for heating described rotating shaft.
According to another aspect of the present utility model, a kind of MOCVD device is provided, comprises:
Airtight reaction chamber;
Be positioned at the substrate bearing platform of reaction chamber, surperficial thereon for fixed substrate;
Be connected to the lower surface of substrate bearing platform, rotating shaft for driving substrate bearing platform to rotate;
To be positioned at below substrate bearing platform and with substrate bearing platform in the vertical direction be separated by a segment distance, heating unit as elucidated before, for heating described substrate bearing platform in the mode of radiation.
Accompanying drawing explanation
Fig. 1 is the structural representation of the MOCVD device of the utility model embodiment;
Fig. 2 and Fig. 3 be to can be applicable in above-mentioned MOCVD device, the structural representation of heating unit for heating substrate bearing platform;
Fig. 4 and Fig. 5 is the structural representation of the heating unit of the utility model embodiment;
Fig. 6 be the modification of heating unit structural representation.
Embodiment
Below with reference to accompanying drawing, heating unit of the present utility model and MOCVD device are described.It is emphasized that be only the elaboration of exemplary type here, do not get rid of and have other utilization embodiment of the present utility model.
Fig. 1 is the structural representation of the MOCVD device of the utility model embodiment.As shown in Figure 1, MOCVD device 10 comprises the reaction chamber 2 with diffuser 14, gas barrier 17, and wherein, diffuser 14 can be arranged on the top of reaction chamber 2, and gas barrier 17 can be arranged on the bottom of reaction chamber 2.
The cylinder side wall 26 that reaction chamber 2 has the roof 22 on top, the diapire 24 in bottom and extends between roof 22 and diapire 24.Roof 22, diapire 24 surround bubble-tight inter-process space 20 jointly with sidewall 26, can hold the gas penetrated from diffuser 14.Although shown reaction chamber 2 is columnar, other embodiments also can comprise the reaction chamber with other shapes, such as, comprise taper shape or other surfaces of revolution, square, sexangle, octagon or arbitrarily other suitable shapes.
Diffuser 14 is connected with the gas source for supplying the process gas applied in processing thereof, and process gas is as vector gas and reactant gases, and reactant gases is as the source material of organometallics and V race metallic element.In typical metal organic chemical vapor deposition process, vector gas can be the mixture of nitrogen, hydrogen or nitrogen and hydrogen, therefore can primarily of nitrogen and/or hydrogen composition at the process gas of substrate bearing countertop, and with the reactant gases composition of a tittle.Diffuser 14 is set to receive various gas and direct process gas flows roughly in a downward direction.
Diffuser 14 also can be connected with being set to the cooling system of liquid circulation by other distribution elements, remains on required temperature to make the temperature of element in operating process.In addition, in order to cool the wall (comprising roof 22, diapire 24 and sidewall 26) of reaction chamber 2, similar refrigerating unit (not shown) can be set.
Gas barrier 17 is set to inter-process space 20 emission gases (both comprised the waste gas that reaction generates, and also comprised the portion gas not having enough time to participate in reaction) from reaction chamber 2.Gas barrier 17 comprises and is arranged on bottom reaction chamber 2 or the air outlet 70 of adjacent bottom, and be arranged on reaction chamber 2 outer, to be communicated with pump 18 or other vacuum source for providing gas flow power with air outlet 70.
Reaction chamber 2 is also provided with the substrate moved in and out for substrate and imports and exports 30, and adjacent sidewall 26 arranges and can carry out that move up and down, ringwise reaction chamber liner 34 along sidewall 26 direction.Reaction chamber liner 34 has the off-position being positioned at top and the open position being positioned at below.After Substrate treatment completes, reaction chamber liner 34(can be moved down and be in the open position), substrate is imported and exported 30 and exposes, and then substrate can be shifted out from substrate import and export 30.The pending substrate of lower batch also can import and export 30 immigrations from substrate.After substrate moves into, can on move reaction chamber liner 34(and make that it is in the closed position), substrate is imported and exported 30 and hides, thus make inter-process space 20 and substrate import and export 30 to separate.Time in the closed position, the region circle symmetrically defined by this reaction chamber liner 34, and substrate is imported and exported 30 " being hidden " and thus can not be contacted with process gas below at reaction chamber liner 34, the region that process gas can touch is the circumferential border defined by this reaction chamber liner 34, which ensure that the homogeneity of whole processing environment.The driving mechanism (not shown) moved up and down for controlling and drive reaction chamber liner 34 can be the driving mechanism of any type, such as machinery, dynamo-electric, hydraulic pressure or pneumatic driving mechanism.
Although shown reaction chamber liner 34 is columnar, other embodiments can comprise the reaction chamber liner with other shapes, such as, comprise, square, sexangle, octagon or arbitrarily other suitable shapes.
Reaction chamber 2 is also provided with rotating rotating shaft 44, is arranged on rotating shaft 44 top and substrate bearing platform 40, loader mechanism (not shown) and the heating unit 46 etc. that can rotate with rotating shaft 44.Wherein, rotating shaft 44 is connected with the rotary drive mechanism (not shown) of such as motor driver etc., is configured such that rotating shaft 44 rotates around its central shaft.Rotating shaft 44 also can be provided with roughly along the axially extended internal cooling channel (not shown) of rotating shaft.Internal cooling channel can be connected with cooling source, makes fluid coolant to pass cooling channel by cooling source and to return cooling source and circulate.
Substrate bearing platform 40 is in the form of annular discs substantially, can by do not pollute CVD process and can bear this process experience temperature material (as graphite, silicon carbide or other heat-stable materials) make.Be provided with a plurality of substrate being roughly circle in the upper surface of substrate bearing platform 40 and keep accommodation section (not shown), each substrate keeps accommodation section to be suitable for maintenance substrate W.In one example, substrate bearing platform 40 can have the diameter of about 500 millimeters to about 1000 millimeters.
Substrate bearing platform 40 can be imported and exported 30 from substrate and move in reaction chamber 2 by loader mechanism (not shown), and substrate bearing platform 40 is arranged on rotating shaft 44 top; Substrate bearing platform 40 and rotating shaft 44 can also be made to depart from, and shift out reaction chamber 2 from substrate import and export 30.
Heating unit 46 is arranged on below substrate bearing platform 40, mainly through radiation delivery heat to the bottom surface of substrate bearing platform 40.The heat being applied to substrate bearing platform 40 bottom surface upwards can flow over the bottom surface that substrate bearing platform 40 is passed to each substrate W, and upwards through the end face of substrate W to substrate W.Heat also can be radiated to the colder element of reaction chamber 2 from the end face of the end face of substrate bearing platform 40 and substrate W, the sidewall 26 of such as reaction chamber 2 and diffuser 14.Heat also can be passed to from the end face of the end face of substrate bearing platform 40 and substrate W the process gas flow through side on these surfaces.Reaction chamber 2 also comprises external bushing 28, to reduce the infiltration of process gas to the region of reaction chambers contain heating unit 46.In the exemplary embodiment, insulation plate (not shown) can be set below heating unit 46, such as, be set to parallel with substrate bearing platform 40, to help to guide heat upwards to transmit towards substrate bearing platform 40 from heating unit 46, instead of transmit towards the diapire 24 of reaction chamber 2 bottom downwards.
Fig. 2 and Fig. 3 be to can be applicable in above-mentioned MOCVD device, the structural representation of heating unit 46 ' for heating substrate bearing platform 40.As shown in Figure 2 and Figure 3, heating unit 46 ' comprises heater strip 463 ' in an additional heated filament 461 ' and, and each heater strip 461 ', 463 ' is continuous print wire or class linear structure.Herein and the hereinafter alleged heater strip " continuously " of this patent document refers to, be distributed in each region in single heater strip, for being that each heating part of heat energy is electrically connected as a whole by electric energy conversion, this heater strip only just can fully need work by connecting a power supply.
Additional heated filament 461 ' is the arc structure of an individual pen, and its two end points are electrical connected with the positive and negative electrode of a heating power supply (not shown) respectively.By regulating the degree of heat of the additional heated filament 461 ' of the power controllable of this heating power supply, thus regulate the temperature of substrate bearing platform 40 outer edge area.Interior heater strip 463 ' is the planar spiral winding structure of a multi-turn, and width, the thickness of each turn coil are all roughly equal, and each turn coil is made up of identical material.Two end points of interior heater strip 463 ' are connected with the positive and negative electrode of another heating power supply (not shown) respectively.By the degree of heat of heater strip 463 ' in the power controllable that regulates this another heating power supply, thus regulate the temperature of substrate bearing platform 40 interior region.Because inside and outside heater strip 463 ' and 461 ' is independent control, thus to the outer edge area of substrate bearing platform 40 or interior region carry out temperature regulate time, can avoid the unnecessary temperature adjustment in another region, thus be conducive to the temperature homogeneity realizing each region of substrate bearing platform 40 upper surface.
But still there is the defect of essence in it.The region covered due to interior heater strip 463 ' is very large, and in the region that this is very large, temperature fluctuation everywhere may be very large.Such as, often there will be this situation: the temperature in most of region all, within preferably depositing temperature, only has the temperature of one or two zonule and this preferred temperature to have relatively large deviation.Inevitably, just will face a difficult choice: do not adjust interior heater strip 463 ' heating power, the deposition quality being positioned at the substrate surface of this one or two zonule compares other region can be far short of what is expected; The words of heater strip 463 ' heating power in adjustment, though may make moderate progress to the temperature of this one or two zonule, but inevitably also will adjust to the temperature (because these regions are all in the temperature setting range of interior heater strip 463 ') in other region, and make the region being originally in better depositing temperature deviate from this preferred temperature.
For above-mentioned defect, the solution that a kind of ratio is easier to expect is: interior heater strip 463 ' is divided into multiple independently heater strip, and each heater strip only covers a very little region, and with one independently heating power supply be electrically connected.When the temperature in a certain region needs to adjust, the heating power supply power of the heater strip only needing adjustment corresponding.Typically, the region that each heater strip covers is less, and the effect of improvement is more obvious.But this solution needs to increase several even more heating power supply, significantly increases cost.In addition, due to increasing of heating power supply number, make the connection between heater strip and heating power supply become complicated, the automatic control of controller to heating power supply power also becomes difficulty.
Creator of the present utility model is devoted to improve above-mentioned defect further.In research and experiment, creator finds, for the heater strip (such as, the interior heater strip 463 ' shown in Fig. 2 and Fig. 3) of a multi-turn, changes the width of its a certain circle, this circle of adjustable and other heating power enclosed.Typically, when other condition is constant, reduces the width of certain circle, then can strengthen the heating power of this circle; Increase the width of certain circle, then can reduce the heating power of this circle.Based on this, creator proposes the design of a kind of new multi-turn nichrome wire, and it, in the relatively low region of script temperature, reduces the width of the coil in this region; On the contrary, in the region that script temperature is higher, the width of the coil in this region is increased.The degree that width reduces or increases, with the degree positive correlation of script temperature departure.This design makes the width of each circle in this nichrome wire finally and not exclusively equal.
Similar, creator also finds, the adjustment of other parameter (such as, the resistivity etc. of the thickness of coil, coil used material) relevant to the resistivity of coil unit length, also can affect the distribution of the heating power in each region of nichrome wire.Such as, when other condition is constant, reduces the thickness of certain circle, then can strengthen the heating power of this circle; Increase the thickness of certain circle, then can reduce the heating power of this circle.Again such as, when other condition is constant, at the surface-coated conductive coating of certain circle, then can reduce the heating power of this circle.When other condition is constant, certain material of enclosing is replaced by the material of more low electrical conductivity, then can strengthens the heating power of this circle; Certain material of enclosing is replaced by the material of more high conductivity, then can reduces the heating power of this circle.Based on this, creator also proposed the multi-turn nichrome wire design that another kind can improve each region thermal uniformity, and it, in the relatively low region of script temperature, reduces the thickness of the coil in this region or/and the resistivity of material; On the contrary, in the region that script temperature is higher, increase the thickness of the coil in this region or/and the resistivity of material.The degree that thickness (or resistivity of material) reduces or increases, with the degree positive correlation of script temperature departure.This design makes the thickness of each circle in this nichrome wire finally and not exclusively equal or make the material of each circle finally incomplete same.
Fig. 4 and Fig. 5 is the structural representation of a kind of heating unit designed based on above-mentioned resolving ideas of the present utility model, and it can be applicable in the MOCVD device shown in Fig. 1, can obtain uniform temperature everywhere for making substrate bearing platform 40 upper surface.As Fig. 4 (due to the restriction of pagewidth, merely illustrates the Half-edge Structure of substrate bearing platform 40 and heating unit etc. in Fig. 4.Substrate bearing platform 40 and heating unit are axially symmetric structure, thus, this Half-edge Structure of display roughly can know the exposure structure of heating unit and the relative position relation between heating unit and substrate bearing platform 40) with shown in Fig. 5, described heating unit to be positioned at below substrate bearing platform 40 and to be separated by a segment distance with described substrate bearing platform 40 in the vertical direction, heat described substrate bearing platform 40 in the mode of radiation, described heating unit comprises continuous print first radiation heating silk 463.
Described first radiation heating silk 463 is positioned at same plane on the whole, and comprises two end points m and n, Departments of Radiation.Wherein, two end points m and n, for being electrically connected the positive and negative electrode of a heating power supply (not shown), can put on the first radiation heating silk 463 to make this heating power supply.Described Department of Radiation, for connecting this two end points m and n, comprises multiple arc radiation section a of the distribution in concentric(al) circles, b, c, d, e and f and the connection section p for connecting adjacent arc radiation section.The center of circle of arc radiation section a, b, c, d, e and f is all positioned at the turning axle of substrate bearing platform 40---in rotating shaft 44.
For arc radiation section a, b, c, d, e or f that each is independent, the resistivity of the unit length of this arc radiation section various places inside is equal.In the present embodiment, width everywhere in arc radiation section a, thickness, making material are all identical, and the resistivity of its unit length is everywhere naturally equal.Arc radiation section b, c, d, e and f are like this equally.Because in each arc radiation section, the resistivity of unit length is equal everywhere, thus, in same arc radiation section, heating power is everywhere identical, and this makes the rotation of substrate bearing platform 40 can not reduce the being heated evenly property of its position.
In first radiation heating silk 463, at least there are two such arc radiation sections---the first arc radiation section and the second arc radiation section, the resistivity of the unit length both them is unequal.This is unequal is temperature homogeneity in order to improve each region of substrate bearing platform 40.
Such as, before making improvement, each circle of the first radiation heating silk 463 (namely, arc radiation section a, b, c, d, e and f) there is identical width, thickness, and be made up of identical material (one as in tungsten, molybdenum, niobium, tantalum, rhenium and alloy thereof etc.), its defect met with is: be starkly lower than other region with the temperature in the substrate bearing platform region corresponding to arc radiation section b, c, and especially low with the temperature in the region corresponding to arc radiation section c.For improving this defect, the first radiation heating silk 463 shown in Fig. 4 and Fig. 5 reduces the width of arc radiation section b, c, and the amplitude that arc radiation section c width reduces is greater than arc radiation section b.In practical application, the amplitude that their width reduce can be determined according to the proportionlity of their temperature.Such as, if the temperature of arc radiation section b corresponding zone only has 1/2nd of other main region, the temperature of arc radiation section c corresponding zone only has 3/4ths of other main region, then the width of arc radiation section b, c can be considered to be reduced to 1/2nd, 3/4ths of original width respectively.Then, remeasure the distribution situation of temperature, if meet temperature homogeneity requirement, then illustrate that this amended first radiation heating silk meets the requirements completely; If still have small size temperature deviation, then can do further adjustment according to this deviation state to this amended first radiation heating silk.
Except the mode given by Fig. 4 and Fig. 5, at least also have with the resistivity of under type adjustable arc radiation section unit length, unequal with the resistivity of the unit length making the first arc radiation section and the second arc radiation section:
A (), each arc radiation section are made up of identical material, make the resistivity of the unit length between the first arc radiation section and the second arc radiation section unequal by making arc radiation section have different thickness;
B (), each arc radiation section are made up of identical material, have different width and thickness by making arc radiation section and make the resistivity of the unit length between the first arc radiation section and the second arc radiation section unequal;
C (), each arc radiation section include the main part be manufactured from the same material, a seal coat on main part in first and second arc radiation section is made by (1), another is seal coat not, or (2) make first and second arc radiation section on main part, cover different coatings, and make the resistivity of the unit length between the first arc radiation section and the second arc radiation section unequal;
(d), for above-mentioned implementation (c), the main part of first and second arc radiation section can be made further to have different width or/and thickness, to expand their unequal degree in resistance per unit length rate further.
In the present embodiment, the two ends that heating unit also can comprise the second radiation heating silk 461, second radiation heating silk 461 are all electrically connected with the positive and negative electrode of another heating power supply (not shown).This second radiation heating silk 461 is positioned at the first radiation heating silk 463 periphery and surrounds the first radiation heating silk 463, for the outermost edge region of heated substrate plummer 40, as shown in Figure 4.The concrete structure of this second radiation heating silk 461 can be identical with the additional heated filament 461 ' shown in Fig. 3, is all the arc structure of individual pen.The thickness, material etc. of the second radiation heating silk 461 all can be identical with the first radiation heating silk 463.The width of the second radiation heating silk 461 can much smaller than the first radiation heating silk 463 width everywhere, in order to provide higher heating power.In the present embodiment, the first radiation heating silk 463, second radiation heating silk 461 provides the energy by different heating power supplies, and thus they can realize independent control without interfering with each other.
Support for convenience of unified, the second radiation heating silk 461 and the first radiation heating silk 463 can be arranged in same plane, as shown in Figure 4.
In other embodiments, the second independent radiation heating silk 461 can not be set, but make a few circle of the multidirectional outer winding of the first radiation heating silk 463, to occupy the region at the second radiation heating silk 461 place, thus utilize the first radiation heating silk 463 be substrate bearing platform 40 outermost edge region heating.
The central zone of substrate bearing platform 40 is directly supported by rotating shaft 44; this makes the heat of substrate bearing platform 40 central zone can be passed to below fast by rotating shaft 44, and then causes the temperature of substrate bearing platform 40 central zone usually can much smaller than other region of substrate bearing platform 40.For improving above-mentioned defect, heating unit of the present utility model also can comprise the 3rd radiation heating silk 465 that twisted rotary shaft 44 is arranged, as shown in Figure 6, the two ends of the 3rd radiation heating silk 465 are all electrically connected with the positive and negative electrode of another heating power supply (not shown), for rotating shaft described in direct heating 44, especially the upper end of rotating shaft 44, make the temperature of rotating shaft 44 upper end no longer be starkly lower than the central zone of substrate bearing platform 40, thus avoid or suppress the heat of substrate bearing platform 40 central zone to shift to rotating shaft 44.3rd radiation heating silk 465 in the horizontal direction comparable first radiation heating silk 463 more close to rotating shaft 44.For making the heat target of the 3rd radiation heating silk 465 mainly concentrate on rotating shaft 44, the hot face of the 3rd radiation heating silk 465 (that is, the plane jointly determined by length direction and the width of heater strip) can be made to face rotating shaft 44 and to arrange.
Although content of the present utility model has done detailed introduction by above preferred embodiment, will be appreciated that above-mentioned description should not be considered to restriction of the present utility model.After those skilled in the art have read foregoing, for multiple amendment of the present utility model and substitute will be all apparent.Therefore, protection domain of the present utility model should be limited to the appended claims.
Claims (12)
1. the heating unit for MOCVD device, described heating unit to be positioned at below substrate bearing platform and to be separated by a segment distance with described substrate bearing platform in the vertical direction, described substrate bearing platform is heated in the mode of radiation, described heating unit comprises continuous print first radiation heating silk, and described first radiation heating silk comprises:
Two end points, for being electrically connected the positive and negative electrode of heating power supply;
For connecting the Department of Radiation of these two end points, described Department of Radiation comprises multiple arc radiation section of distribution and the connection section for connecting different arc radiation section in concentric(al) circles; For the arc radiation section that each is independent, the resistivity of the unit length of its various places inside is equal; At least there are two such arc radiation sections---the first arc radiation section and the second arc radiation section, the resistivity of their unit length is unequal.
2. heating unit as claimed in claim 1, wherein, each arc radiation section is made up of identical material, makes the resistivity of the unit length between the first arc radiation section and the second arc radiation section unequal by making arc radiation section have different width.
3. heating unit as claimed in claim 1, wherein, each arc radiation section is made up of identical material, makes the resistivity of the unit length between the first arc radiation section and the second arc radiation section unequal by making arc radiation section have different thickness.
4. heating unit as claimed in claim 1, wherein, each arc radiation section is made up of identical material, has different width and thickness by making arc radiation section and makes the resistivity of the unit length between the first arc radiation section and the second arc radiation section unequal.
5. heating unit as claimed in claim 1, wherein, each arc radiation section includes the main part be manufactured from the same material, a seal coat on main part in first and second arc radiation section is made by (1), another is seal coat not, or (2) make first and second arc radiation section on main part, cover different coatings, and make the resistivity of the unit length between the first arc radiation section and the second arc radiation section unequal.
6. heating unit as claimed in claim 5, wherein, the main part of first and second arc radiation section has different width or/and thickness, to expand their unequal degree in resistance per unit length rate further.
7. heating unit as claimed in claim 1, wherein, described first radiation heating silk is positioned at same plane on the whole.
8. heating unit as claimed in claim 1, also comprise the second radiation heating silk, the two ends of the second radiation heating silk are used for being electrically connected with the positive and negative electrode of heating power supply, and described second radiation heating silk is positioned at the first radiation heating silk periphery and surrounds the first radiation heating silk.
9. heating unit as claimed in claim 8, wherein, described second radiation heating silk and described first radiation heating silk are positioned at same plane.
10. heating unit as claimed in claim 9, wherein, described second radiation heating silk is the arc structure of individual pen.
11. heating units as described in claim 1 or 8, also comprise the 3rd radiation heating silk, the two ends of the 3rd radiation heating silk are used for being electrically connected with the positive and negative electrode of heating power supply, described 3rd radiation heating silk around the rotating shaft for supporting substrate plummer, for heating described rotating shaft.
12. 1 kinds of MOCVD device, comprising:
Airtight reaction chamber;
Be positioned at the substrate bearing platform of reaction chamber, surperficial thereon for fixed substrate;
Be connected to the lower surface of substrate bearing platform, rotating shaft for driving substrate bearing platform to rotate;
To be positioned at below substrate bearing platform and with substrate bearing platform in the vertical direction be separated by a segment distance, heating unit as described in any one of claim 1 to 11, for heating described substrate bearing platform in the mode of radiation.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520754264.6U CN204982046U (en) | 2015-09-25 | 2015-09-25 | MO CVD equipment and heating device thereof |
| TW105206421U TWM526576U (en) | 2015-09-25 | 2016-05-05 | MOCVD apparatus and heating device thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520754264.6U CN204982046U (en) | 2015-09-25 | 2015-09-25 | MO CVD equipment and heating device thereof |
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| Publication Number | Publication Date |
|---|---|
| CN204982046U true CN204982046U (en) | 2016-01-20 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201520754264.6U Active CN204982046U (en) | 2015-09-25 | 2015-09-25 | MO CVD equipment and heating device thereof |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN204982046U (en) |
| TW (1) | TWM526576U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108728828A (en) * | 2017-04-20 | 2018-11-02 | 中微半导体设备(上海)有限公司 | CVD equipment and its temprature control method and heater |
| CN110856295A (en) * | 2018-08-21 | 2020-02-28 | Lg电子株式会社 | Electric heater |
| CN113795057A (en) * | 2021-09-10 | 2021-12-14 | 上海卫星工程研究所 | Heating plate structure based on double heating wires |
-
2015
- 2015-09-25 CN CN201520754264.6U patent/CN204982046U/en active Active
-
2016
- 2016-05-05 TW TW105206421U patent/TWM526576U/en unknown
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108728828A (en) * | 2017-04-20 | 2018-11-02 | 中微半导体设备(上海)有限公司 | CVD equipment and its temprature control method and heater |
| CN110856295A (en) * | 2018-08-21 | 2020-02-28 | Lg电子株式会社 | Electric heater |
| CN113795057A (en) * | 2021-09-10 | 2021-12-14 | 上海卫星工程研究所 | Heating plate structure based on double heating wires |
Also Published As
| Publication number | Publication date |
|---|---|
| TWM526576U (en) | 2016-08-01 |
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Address after: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee after: Medium and Micro Semiconductor Equipment (Shanghai) Co., Ltd. Address before: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Patentee before: Advanced Micro-Fabrication Equipment (Shanghai) Inc. |