CN103074607A - Graphite plate and reaction chamber with graphite plate - Google Patents

Graphite plate and reaction chamber with graphite plate Download PDF

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Publication number
CN103074607A
CN103074607A CN2012100412040A CN201210041204A CN103074607A CN 103074607 A CN103074607 A CN 103074607A CN 2012100412040 A CN2012100412040 A CN 2012100412040A CN 201210041204 A CN201210041204 A CN 201210041204A CN 103074607 A CN103074607 A CN 103074607A
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China
Prior art keywords
graphite plate
substrate
groove
support frame
hole
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CN2012100412040A
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Chinese (zh)
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梁秉文
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GUANGDA PHOTOELECTRIC EQUIPMENT TECHNOLOGY (JIAXING) CO LTD
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GUANGDA PHOTOELECTRIC EQUIPMENT TECHNOLOGY (JIAXING) CO LTD
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Priority to CN2012100412040A priority Critical patent/CN103074607A/en
Publication of CN103074607A publication Critical patent/CN103074607A/en
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Abstract

The invention solves a technical problem of providing a graphite plate used in a chemical vapor deposition process and a reaction chamber comprising the graphite plate. The graphite plate comprises a recess used for placing a substrate. The graphite plate comprises a hole positioned in the graphite plate corresponding to the edge of the substrate. The hole is used for reducing the heat radiation upon the edge of the substrate. With the graphite plate provided by the invention, the temperature difference between the edge of the substrate and the center of the substrate is reduced, substrate heating uniformity is improved, chemical vapor deposition process uniformity is improved, and yield of epitaxial chip is improved.

Description

Graphite plate, has the reaction chamber of above-mentioned graphite plate
Technical field
The present invention relates to chemical vapour deposition (CVD) technical field, particularly the graphite plate of chemical vapor depsotition equipment, reaction chamber.
Background technology
MOCVD (Metal-Organic Chemical Vapor Deposition) is a kind of chemical gas phase epitaxial deposition process that grows up on the basis of vapor phase epitaxial growth (VPE).It is with the source material as the crystal growth such as the hydride of the organic compound of III family, II family element and V, VI family element, carry out depositing operation in the pyrolysis mode at graphite plate, the thin layer monocrystal material of grow various III-V family, II-VI compound semiconductor and their multivariate solid solution.
The below describes the principle of existing chemical vapor deposition method.Particularly, take MOCVD as example, please refer to the structural representation of existing chemical vapor deposition method equipment shown in Figure 1.
Be formed with the spray header 11 and the graphite plate 12 that are oppositely arranged in the glove box 10.Described spray header 11 is interior can to arrange a plurality of apertures, and described spray header 11 is used for providing reactant gases.Have a plurality of grooves in the described graphite plate 12, the corresponding a slice substrate 121 of placing in each groove, the material of described substrate 121 is generally expensive sapphire.The below of described graphite plate 12 also is formed with heating unit 13, and 13 pairs of graphite plates 12 of described heating unit heat, and graphite plate 12 intensification of being heated can be heated substrate 121 with thermal radiation and heat exchange pattern.Because substrate 121 is placed in the graphite plate 12, both contacts, so the heating of 12 pairs of substrates 121 of graphite plate is take thermal conduction as main.
When carrying out MOCVD technique, reactant gases enters the conversion zone (position on the surface of close substrate 121) of graphite plate 12 tops from the aperture of spray header 11, described substrate 121 is owing to the thermal conduction heating of heating unit 13 has certain temperature, thereby this temperature is so that carry out chemical reaction between the reactant gases, thereby at substrate 121 surface deposition epitaxial material layers.
Find that in practice the homogeneity of existing chemical vapor deposition method is not high, the yield of extension chip is on the low side.
Summary of the invention
The problem that the embodiment of the invention solves has provided a kind of graphite plate, has contained the reaction chamber of above-mentioned graphite plate, improved the homogeneity to the heating of substrate (substrate of distortion has especially occured), improve the homogeneity of chemical vapor deposition method, improved the yield of extension chip.
In order to address the above problem, the invention provides a kind of graphite plate of chemical vapor deposition method, have for the groove of placing substrate, comprising: hole, be arranged in the graphite plate corresponding with the edge of described substrate, described hole is used for reducing the thermal radiation to edges of substrate.
Alternatively, described hole is connected with groove.
Alternatively, V-type is formed on the sidewall of described groove and bottom.
Alternatively, also comprise: bracing frame is used for substrate is suspended, so that substrate does not contact with graphite plate.
Alternatively, the material of support frame as described above is one or more in quartz, graphite, boron nitride, pottery or the zirconium white.
Alternatively, the top of support frame as described above is fixed on the graphite plate of groove both sides, and the bottom of support frame as described above is used for placing substrate.
Alternatively, support frame as described above is Z-type or notch cuttype.
Alternatively, the front of the front of the front of described substrate, graphite plate and bracing frame flushes.
Correspondingly, the present invention also provides a kind of reaction chamber of chemical vapor depsotition equipment, comprises described graphite plate.
Compared with prior art, the present invention has the following advantages:
The present invention reduces the thermal radiation to edges of substrate by in the graphite plate corresponding with the edge of described substrate hole being set, the temperature difference between the edge that reduces substrate and the middle part of substrate, the homogeneity that the raising substrate is heated;
Further have optimally, the groove of the graphite plate that the embodiment of the invention provides has corresponding with it bracing frame, utilize this bracing frame that substrate is suspended, so that substrate does not contact with graphite plate, when carrying out chemical vapor deposition method, (graphite plate heats up under the heating of heating unit graphite plate as the thermal source of substrate, can provide heat with thermal radiation and heat exchange pattern), because substrate does not contact with graphite plate, therefore utilize graphite plate of the present invention can realize that heating to substrate is in the thermal radiation mode as main, having eliminated prior art utilizes thermal conduction to heat the inhomogeneous impact that causes to the heating of each point on the substrate, improved the homogeneity to substrate heating, the homogeneity of the epitaxial material layer that forms on the corresponding homogeneity of having improved chemical vapor deposition method and the substrate;
Further optimally, the front of support frame as described above, the front of substrate flush with the front of graphite plate, can avoid because the air-flow skewness of substrate face;
Further optimally, support frame as described above hangs on the graphite plate of described groove both sides, the top of support frame as described above is fixed on the graphite plate of both sides of described groove, the bottom of support frame as described above is used for placing substrate, support frame as described above be shaped as the Z-type annulus, when substrate need to rotate together along with graphite plate, be conducive to guarantee the relatively stable of substrate and graphite plate.
Description of drawings
Fig. 1 is the structural representation of the MOCVD device of prior art;
Fig. 2 is the structural representation of the graphite plate of first embodiment of the invention;
Fig. 3 is the structural representation of the graphite plate of second embodiment of the invention;
Fig. 4 is the plan structure synoptic diagram of graphite plate shown in Figure 3;
Fig. 5 is the structural representation of the graphite plate of third embodiment of the invention;
Fig. 6 is the structural representation of the graphite plate of fourth embodiment of the invention;
Fig. 7 is the structural representation of the graphite plate of fifth embodiment of the invention;
Fig. 8 is the structural representation of the graphite plate of sixth embodiment of the invention;
Fig. 9 is the structural representation of the graphite plate of seventh embodiment of the invention;
Figure 10 is the bottom construction synoptic diagram of the bracing frame among Fig. 9 of the present invention;
Figure 11 is the structural representation of the graphite plate of eighth embodiment of the invention;
Figure 12 is the structural representation of the graphite plate of ninth embodiment of the invention.
Embodiment
The homogeneity of the chemical vapor deposition method of prior art is not high, and the yield of extension chip is on the low side.Study discovery through the contriver, inhomogeneous (each point of substrate has the temperature difference) causes the epitaxial material layer that forms at substrate after the chemical vapor deposition method inhomogeneous because substrate is heated.Because fringing effect impact, graphite plate are in the substrate heat-processed, the temperature of edges of substrate is higher than the temperature at substrate middle part.In order to reduce the temperature of edges of substrate, the present invention reduces thermal radiation or thermal conduction to edges of substrate by near the graphite plate edges of substrate hole being set.Particularly, this hole can be arranged in the graphite plate corresponding with the edge of substrate, such as, this hole can be arranged in the graphite plate of substrate both sides, and this hole can be connected with the sidewall of the groove of placing substrate or not be communicated with; This hole also can be arranged in the graphite plate of edges of substrate below, and this hole can be connected or not be communicated with (be not communicated with to be and have the graphite plate isolation between hole and the groove) with the bottom of groove.
Below in conjunction with embodiment technical scheme of the present invention is described in detail.For technical scheme of the present invention is described better, please in conjunction with the structural representation of the graphite plate of first embodiment of the invention shown in Figure 2.Facing up of graphite plate 20 has groove in the graphite plate 20, and described groove has bottom and sidewall.The sidewall of groove of the present invention is the both sides perpendicular to the front of graphite plate 20 of groove, and the graphite plate 20 of below is exposed in the bottom of described groove.The front of graphite plate of the present invention be graphite plate towards the surface of spray header (not shown) one side, more than definition is applicable in full hereby explanation.
Hole of the present invention is positioned at the graphite plate 20 of substrate 22 both sides, and this hole top is coated with graphite plate 20, directly being exposed to the spray header below with hole compares, present embodiment can prevent from the hole chemical reaction occuring and form weighting material, and so that the surface of substrate 22 both sides is even curface, the source gas that is conducive to substrate 22 tops forms uniform distribution.
The below please refer to the structural representation of the graphite plate of second embodiment of the invention shown in Figure 3.The structure identical with the first embodiment adopts identical label to represent.The difference of present embodiment and the first embodiment is that the bottom of groove is provided with bracing frame 21, and this bracing frame 21 is around sidewall and one week of bottom of groove, and substrate 22 is positioned at bracing frame 21 tops.As an embodiment, a groove is only arranged in the graphite plate 20 shown in Figure 3, in other embodiment, in the graphite plate a plurality of grooves can be arranged.
Support frame as described above 21 is used for substrate 22 is suspended so that substrate 22 do not contact with graphite plate 20, thereby eliminate owing to substrate 22 contacts the thermal conduction that brings with graphite plate 20 so that 20 pairs of substrates 22 of graphite plate be heated to be thermal radiation or take thermal radiation as main.
Please in conjunction with Fig. 4, be the schematic top plan view of graphite plate shown in Figure 3.Support frame as described above 21 be shaped as annular.This annular bracing frame 21 is around sidewall and one week of bottom of groove, and substrate 22 is positioned at bracing frame 21 tops.
Please continue with reference to figure 3, as an optional embodiment of the present invention, bracing frame 21 is positioned at the below of substrate 22.The back side of substrate 22 does not contact with graphite plate 20.The height L of support frame as described above 21 should satisfy, and when substrate 22 presented bowl-shape distortion (being that the middle part of substrate 22 is towards the deformation of bottom of groove), the back side of substrate 22 did not still contact with graphite plate 20.As another optional embodiment of the present invention, the thickness D sum of the height L of support frame as described above 21 and substrate 22 should equal the degree of depth of groove H.The thickness D of substrate 22 of the present invention refers to not occur the front (towards the surface of the first side of spray) of the substrate of deformation and the vertical range between the back side (and surface of vis-a-vis).The height L of bracing frame of the present invention refer to the front of bracing frame 21 and the back side (with vis-a-vis and with the surface of a spray header distance side farthest) distance.As an embodiment, the depth H scope of described groove is 300 microns~2 millimeters, and the thickness D scope of described substrate 22 is 300 microns~1.5 millimeters, and correspondingly, the height L scope of support frame as described above 21 is 290 microns~1.7 millimeters.
In the present embodiment, although the side of substrate 22 still has part to contact with the sidewall of groove, by this part contact, graphite plate 20 can be passed to substrate 22 with the part heat with heat exchange pattern, but the heat of heat exchange pattern conduction is limited, and is little on the homogeneity of the being heated impact of substrate 22.In other embodiment, can between the both sides of substrate 22 and graphite plate 20, transparent thermal insulation layer be set, the material of this thermal insulation layer can be a kind of in quartz, boron nitride, sapphire, pottery or the zirconium white or mixing wherein.
As an embodiment, the width of support frame as described above 21 should be as far as possible little, to reduce and the contacting of substrate 22.As preferred embodiment, the width range of support frame as described above 21 is placed radius 1/10~1/20 stable that substrate 22 is unsettled to guarantee of substrate for its top.
As an embodiment, the material of support frame as described above 21 is graphite, its can with graphite plate 20 integrated processing, also can process separately, then by mechanical component such as screw and nuts and graphite plate 20 is fixed together or be bonded as one by heat-resistant adhesive and graphite plate 20.
As preferred embodiment, the material of support frame as described above 21 should be transparent material, guarantees that like this heat of the graphite plate 20 of bracing frame 21 belows can transfer to substrate 22 through bracing frame 21.For example the material of support frame as described above 21 can be a kind of in quartz, boron nitride, sapphire, pottery or the zirconium white or mixing wherein.In the present embodiment, the material of support frame as described above 21 is sapphire.
Because graphite plate 20 may rotatablely move in technological process, can stablize in graphite plate in order to guarantee substrate 22, certain inclination can be arranged at the sidewall of described groove and bottom, V-type is formed on the side of sidewall and bottom, purpose be so that the diameter of the bottom of groove greater than the diameter at the top of groove, whole groove is round table-like, guarantees that substrate 22 is relatively stable with the position in the rotary course of graphite plate 20.
Request in person down the structural representation in conjunction with the graphite plate of third embodiment of the invention shown in Figure 5.The structure identical with last embodiment adopts identical label.The difference of present embodiment and last embodiment is to have hole in the graphite plate 20, and this hole is positioned at the sidewall of groove at the edge of substrate 22.The hole of the embodiment of the invention is arranged on the front of graphite plate 20, also is the processing and fabricating for the ease of graphite plate 20.In other embodiment, described hole can be arranged in the graphite plate of the edge below of substrate, also can be arranged in the graphite plate of both sides at the edge of substrate; This hole can be connected with groove, perhaps can have the part graphite plate isolated between this hole and the groove.
The below please refer to the structural representation of the graphite plate of fourth embodiment of the invention shown in Figure 6.The structure identical with last embodiment adopts identical label to represent.The difference of present embodiment and last embodiment is that support frame as described above 21 hangs on the graphite plate 20 of described groove both sides, and the top of support frame as described above 21 is fixed on the graphite plate 20 of both sides of described groove, and the bottom of support frame as described above 21 is used for placing substrate 22.
Support frame as described above 21 is notch cuttype.That is, the top of bracing frame 21 contacts with the front of the graphite plate 20 of groove both sides, side graphite plate 20 contacts of bracing frame 21, and the bottom of support frame as described above 21 is suspended on the groove.The bottom of support frame as described above 21 is used for placing substrate 22, the sidewall of bracing frame 21 is with side and the graphite plate isolation of substrate 22, so that substrate 22 does not contact fully with graphite plate 20, can reduce like this graphite plate 20 and with heat exchange pattern heat is transferred to substrate 22, so that the heating of 20 pairs of substrates 22 of graphite plate is in the thermal radiation mode as main, thereby further improve the homogeneity of being heated to substrate 22.
As preferred embodiment, the front of the front of support frame as described above 21, substrate 22 flushes with the front of graphite plate 20, can prevent that like this bracing frame 21 and graphite plate 20 from bringing impact to the gas of substrate 22 tops, improve the homogeneity of the air-flow distribution of substrate 22 tops.The front of bracing frame of the present invention refer to bracing frame towards the surface of spray header (not shown) one side, more than definition is applicable in full.
As one embodiment of the present of invention, the bottom of the groove at the edge of substrate 22 has hole, and this hole is connected with groove, can utilizing same processing step to make, be convenient to processing and the making of graphite plate 20.
Request in person down the structural representation in conjunction with the graphite plate of fifth embodiment of the invention shown in Figure 7, the parts identical with last embodiment adopt identical label to represent.The difference of present embodiment and last embodiment is, V-type is formed on the sidewall of groove and bottom, correspondingly, bracing frame 21 be shaped as Z-type, support frame as described above 21 hangs on the graphite plate 20 of groove both sides, the top of support frame as described above 21 is fixed on the graphite plate 20 of both sides of groove, and the bottom of support frame as described above 21 is used for placing substrate 22.The bracing frame 21 of the described Z-type of employing present embodiment is stationary substrate 22 better, prevents from being thrown out of in the process of substrate 22 along with graphite plate 20 rotations.In the present embodiment, hole is arranged in the graphite plate 20 of below at the edge of substrate 22.
The below please refer to the structural representation of the graphite plate of sixth embodiment of the invention shown in Figure 8, and the structure identical with last embodiment adopts identical label to represent.The difference of present embodiment and last embodiment is that the front of the front of described substrate 22, bracing frame 21 and the front of graphite plate 20 flush, and is conducive to like this to improve the homogeneity of the gas distribution on substrate 22 surfaces.
The below please refer to the structural representation of the graphite plate of seventh embodiment of the invention shown in Figure 9, and the structure identical with last embodiment adopts identical label to represent.The difference of present embodiment and last embodiment is that the sidewall at the edge of substrate 22 and bottom all are formed with hole, and this hole is connected with groove in the present embodiment.In other embodiment, the isolation of part graphite plate can also be arranged between described hole and the groove.In the present embodiment, support frame as described above 21 be shaped as notch cuttype, the sidewall of this bracing frame 21 does not contact with the graphite plate 20 of groove both sides, can prevent that like this graphite plate 20 from conducting heat to substrate 22 by the sidewall of bracing frame 21, prevent that edge heating to substrate 22 from too much causing the lip temperature of substrate 22 to be higher than the temperature at the middle part of substrate 22, further improves the homogeneity of the temperature distribution of substrate 22.
In the present embodiment, the bottom of support frame as described above 21 does not contact with graphite plate 20, can prevent that also graphite plate 20 from by the edge of bracing frame 21 with heat transferred substrate 22, reducing the temperature contrast at edge and the middle part of substrate 22, further improve the homogeneity of distribution of the temperature of substrate 22.
Conduct heat to substrate in order further to reduce graphite plate by bracing frame, improve the homogeneity of the temperature distribution at the edge of substrate and middle part, as optional embodiment, can also form hole in part bracing frame and substrate contact, so further reduce the contact area of bracing frame and substrate.Particularly, please refer to the structural representation of the bottom of the bracing frame among Fig. 9 shown in Figure 10.As an embodiment, the top of bracing frame (not shown) is positioned on the graphite plate, and the bottom of bracing frame (namely being used for placing the part of substrate) is the double-doughnut structure.Such as figure, the bottom of this bracing frame specifically comprises outer shroud 211, interior ring 212 and is connected outer shroud 211 and the cross structure 213 of interior ring 212.Adopt the contact area of the bracing frame of described double-doughnut structure and substrate few, reduced graphite plate by the heat conducting heat transmission of bracing frame to substrate.
As another embodiment of the present invention, the shape of support frame as described above can also be a plurality of pillar stiffeners (pin), can be the pillar stiffener that equilateral triangle is arranged for three such as support frame as described above, being centered close to of the center of equilateral triangle and groove (bottom vertical of this vertical line and groove) on the same vertical line.Adopt support column arrangement that substrate is suspended in the groove, can further reduce the thermal conduction between substrate and the graphite plate.
The below please refer to the structural representation of the graphite plate of eighth embodiment of the invention shown in Figure 11.The structure identical with the 6th embodiment adopts identical label to represent.The difference of present embodiment and the 6th embodiment is that substrate 22 faces up and is positioned on the step-like bracing frame 21, and the front of the front of described substrate 22, bracing frame 21 and the front of graphite plate 20 flush.In other embodiments, can not adopt bracing frame and directly substrate is positioned in the groove of graphite plate.
The difference of present embodiment and the 6th embodiment is that the shape of hole is different with the position.The hole of present embodiment is positioned at the bottom at the edge of substrate 121, is connected with bottom portion of groove.The degree of depth of hole of the present invention from the sidewall of groove below along substrate 121 radially to the reducing successively of the middle part direction of substrate 121, whole hole is triangular shape.Adopt described hole can further eliminate the thermal radiation of edges of substrate.
The below please refer to the structural representation of the graphite plate of ninth embodiment of the invention shown in Figure 12.The structure identical with the 7th embodiment adopts identical label to represent.Be that with the difference of last embodiment bracing frame 21 is positioned at the middle part of groove, and support frame as described above 21 is made of a plurality of pillar stiffeners.In the present embodiment, the number of described pillar stiffener is 3, and described pillar stiffener is equilateral triangle arranges, being centered close to of the center of equilateral triangle and groove (bottom vertical of this vertical line and groove) on the same vertical line.Adopt the support column arrangement of present embodiment that substrate is suspended in the groove, can further reduce the thermal conduction between substrate and the graphite plate.
To sum up, the present invention reduces the thermal radiation to edges of substrate by in the graphite plate corresponding with the edge of described substrate hole being set, and reduces the thermal radiation to the edge of substrate, reduce the temperature difference between the middle part of the edge of substrate and substrate, improve the homogeneity that substrate is heated;
The groove of the graphite plate that the embodiment of the invention provides has corresponding with it bracing frame, utilize this bracing frame that substrate is suspended, so that substrate does not contact with graphite plate, when carrying out chemical vapor deposition method, (graphite plate heats up under the heating of heating unit graphite plate as the thermal source of substrate, can provide heat with thermal radiation and heat exchange pattern), because substrate does not contact with graphite plate, therefore utilize graphite plate of the present invention can realize that heating to substrate is in the thermal radiation mode as main, having eliminated prior art utilizes thermal conduction to heat the inhomogeneous impact that causes to the heating of each point on the substrate, improved the homogeneity to substrate heating, the homogeneity of the epitaxial material layer that forms on the corresponding homogeneity of having improved chemical vapor deposition method and the substrate;
Further optimally, the front of support frame as described above, the front of substrate flush with the front of graphite plate, can avoid because the air-flow skewness of substrate face;
Further optimally, support frame as described above hangs on the graphite plate of described groove both sides, the top of support frame as described above is fixed on the graphite plate of both sides of described groove, the bottom of support frame as described above is used for placing substrate, support frame as described above be shaped as the Z-type annulus, when substrate need to rotate together along with graphite plate, be conducive to guarantee the relatively stable of substrate and graphite plate.
Although oneself discloses the present invention as above with preferred embodiment, the present invention is defined in this.Any those skilled in the art without departing from the spirit and scope of the present invention, all can make various changes or modifications, so protection scope of the present invention should be as the criterion with the claim limited range.

Claims (9)

1. the graphite plate of a chemical vapor deposition method has for the groove of placing substrate, it is characterized in that, comprising: hole, be arranged in the graphite plate corresponding with the edge of described substrate, and described hole is used for reducing the thermal radiation to the edge of substrate.
2. graphite plate as claimed in claim 1 is characterized in that, described hole is connected with groove.
3. graphite plate as claimed in claim 1 is characterized in that, V-type is formed on the sidewall of described groove and bottom.
4. graphite plate as claimed in claim 1 is characterized in that, also comprises: the bracing frame corresponding with groove is used for substrate is suspended, so that substrate does not contact with graphite plate.
5. graphite plate as claimed in claim 4 is characterized in that, the material of support frame as described above is one or more in quartz, graphite, boron nitride, pottery or the zirconium white.
6. graphite plate as claimed in claim 4 is characterized in that, the top of support frame as described above is fixed on the graphite plate of groove both sides, and the bottom of support frame as described above is used for placing substrate.
7. graphite plate as claimed in claim 6 is characterized in that, support frame as described above is Z-type or notch cuttype.
8. graphite plate as claimed in claim 6 is characterized in that, the front of the front of described substrate, the front of graphite plate and bracing frame flushes.
9. the reaction chamber of a chemical vapor depsotition equipment is characterized in that, comprises graphite plate as claimed in claim 1.
CN2012100412040A 2012-02-22 2012-02-22 Graphite plate and reaction chamber with graphite plate Pending CN103074607A (en)

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CN105453223A (en) * 2013-06-05 2016-03-30 维易科仪器有限公司 Improved wafer carrier having thermal uniformity-enhancing features
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Application publication date: 20130501