JP2013538455A - Substrate heating device - Google Patents

Abstract

The present invention relates to a susceptor for supporting a substrate 9 in a vacuum process chamber and comprising a surface 11 arranged opposite to the substrate 9 and in thermal communication with the substrate 9, the susceptor 1 comprising at least three adjacent ones Zones 5, 6, 8 comprising an outer zone 8, a central zone 6, and an inner zone 5, the zones 5, 6, 8 being arranged concentrically surrounding one another and extending along the surface 11 The outer zone 8 completely surrounds the central zone 6, the central zone 6 completely surrounds the inner zone 5, and the inner zone 5 comprises at least one inner heating element 13 affecting the inner zone 5, the outer zone 8 comprises at least one external heating element 19 affecting the external zone 8, the central zone 6 being smaller than the minimum thickness 12 of the internal zone 5 and the minimum of the external zone 8 It is smaller than 16, to expose a large thickness 15, the thickness 12, 15, 16 extends perpendicularly to the surface 11.
[Selected figure] Figure 3

Description

  The present invention relates to a susceptor comprising a flat surface opposite to a substrate for supporting a substrate in a vacuum process chamber, wherein the substrate is in contact with said surface to be thermally conductive on the susceptor. Also precisely, the invention relates to establishing a high uniform substrate temperature on a large area substrate surface. In particular, the invention preferably shows a high uniform heating system for substrates having a non-circular shape in a vacuum environment. This heating system can be provided for many coating or substrate processing processes performed at temperatures above room temperature.

  Thin film removal or coating processes are well known in the art. And removal uniformity is an important criterion, especially in large area coating processes. In today's thin film technology, layer properties realized in small dimensions need to be extended to a large area of substrate. In general, it has to be taken into account that the tight specifications for the adjustment of small areas require more uniformity in large areas. A typical example is the IC industry, where several thin film layers are coordinated with one another. This adjustment needs to be maintained over the entire substrate area, and high uniformity over all relevant layers is required for all critical materials on all wafers.

  The application of thin film solar cells is a similar example. Here, the battery characteristics that allow high efficiency need to be provided on all unified modules. Regions with "off-spec" characteristics degrade individual batteries. Such batteries produce high resistance in serial connection and have low efficiency. As a result, areas of bad cell material degrade the overall performance in the overall solar module.

  Temperature uniformity is one of the most important factors for chemical vapor deposition (CVD) processes. The chemical reaction during the CVD process represents the so-called Arrhenius reaction, in which the deposition rate exhibits an index depending on the process temperature. As a result, high uniformity of substrate temperature is required to obtain good thickness uniformity.

  In current CVD systems, various methods are used to obtain uniform substrate temperatures. The conventional system uses a heating plate or a susceptor, and the heating plate and the susceptor each represent an important planar finish for adapting the substrate and transferring the heat to the substrate, whereby the requirement for uniform heat distribution Is satisfied. This surface may at least be realized as one surface of the substrate having the size of the substrate area to be heated or a controlled temperature. Such heating plates may include several independent heating zones with different heat inputs. Generally, the periphery of the heating plate, for example the edges and corners, needs to be heated at a higher temperature than the central region to prevent heat loss due to high thermal radiation of the heating plate and the substrate at the surface.

  A previously known solution for heating is to attach an electrical heating element to the heating plate or to combine heating elements such as resistive heating. In a better fit of the heating element and the heating plate, the speed of reaction to the temperature changes in the heating plate.

  There are several approaches to partially control the heat input to the heating plate. An overview of different heating approaches is described in US Patent Application No. 6,962,732. One possible solution for producing a uniformly heated substrate is to use different heating zones, with thermocouples attached to the heating zones. The temperature of each zone is set to a specific value that makes the substrate temperature more uniform. This temperature setting is determined empirically.

  A more sophisticated method of controlling the temperature on the heating plate is to monitor the thermal uniformity of the substrate with a thermocamera meter. This adjusts the heating zone so that uniform temperature transfer can be seen across the substrate. This approach can produce uniform temperature characteristics without being affected by other parameters.

  Alternatively, the temperature of the heating plate can be adjusted after investigating the layer properties resulting from the manufacturing process using the heating plate. One corrects the temperature of the heating zone until uniform layer properties are obtained. This method is widely used in the field of vacuum equipment. However, the uniformity of the coating material is influenced not only by the temperature but also by the gas flow and the geometry of the removal equipment. And the flow non-uniformity is compensated by the temperature control of the heating plate.

  The heating rectangular substrate is challenging, in particular the corners and edges of the substrate are strongly influenced by the thermal radiation to the surrounding cooler chamber. First, it is expected that this can be easily compensated by increasing the heat input to such a region. However, it is difficult to obtain sufficient heat in the corner areas of the heating plate by simply wiring the dense thermal pattern of the resistive heating element, for example, as compared to the other parts of the heating plate. Changing such a heating pattern means changing the heating plate that is real, ie mechanically, expensive and laborious. One solution to this problem is to heat the corner zones individually, thereby electrically adjusting the thermal radiation to the heating plate. This approach is impractical. In fact, most of the heat transferred to the corners with such individual heating zones is dissipated in the cooler zone of the heating plate, which affects the temperature distribution of the overall heating plate. While this can be avoided by thermally separating the regions from one another, partial temperature changes occur in the separation region.

  At present, all the solutions proposed so far face this fundamental bottleneck. Most susceptor or heating plate materials are conductive materials, which efficiently transfer the heat of the heating wire or heating element to the substrate. For example, aluminum (Al), copper (Cu), and carbon (Carbon) are commonly used as a susceptor material. Less conductive material will require more dense wiring of the heating elements to obtain uniform heat. A good conductive material basically spreads the maximum positioning heat generated by the positioning of the heating wire. However, this effect is counterproductive on the edges and corners of the susceptor. Strong maximum heat is required to compensate for heat loss at the edges and corners of the substrate. Simply heating the edge and corner zones will greatly increase the temperature of the central thermal zone.

  As shown in FIGS. 1 and 2, an example illustrates this effect. A susceptor 1 is used which includes four independently operated and controlled heating wires 2, 3, 4. All heating wires 2, 3, 4 form four different zones 5, 6, 7. The first zone 5 is a central zone that most heats the substrate 9. The second zone 6 is an auxiliary central zone that equalizes the temperature difference between the first zone 5 and the second zone 6. The third zone 7 heats the edge of the substrate 9. For these three zones 5, 6, 7, the heating wires 2, 3, 4 are provided below the heating plate 1, as shown in FIG. In FIG. 2, the second zone 6 is omitted.

  The central zone 5 has a wider space in the wiring 2 than the edge zone 7. The rim of the heating zone 8 with the heating element 4 is arranged at the top of the heating plate 9 and is recessed from the heating surface. It is stabilized by the edge bars 10 on the heating plate 9 and protected from contamination by the CVD process. The substrate 9 is slightly larger than the surface of the susceptor 1 so that the edge of the substrate 9 overlaps the edge bar 10 and is thereby heated.

The table shown below shows the temperature set by the operator, the temperature being reached by the heating plate 9, virtually as indicated by the thermocouples mounted in the specific zones 5, 6, 7, 8.
The operator reads the actual temperature setpoint zone 1 180 ° C 181 ° C
Second zone 6 185 ° C 195 ° C
Third zone 7 195 ° C 195 ° C
Rim zone 8 210 ° C 210 ° C

  As shown in this overview, the second zone 6 is overheated above its target temperature due to the set temperatures of the first zone 5 and the third zone 7. Cross talk of the heating zones 5, 6, 7, 8 does not allow accurate heating of the second zone.

  Nevertheless, the temperature of the edge and rim zone 8 needs to be increased sufficiently above the temperature of the central zone 5, otherwise the temperature of the edge of the substrate 9 is too low to allow a uniform increase. .

  The solution to the problem of thermal cross-talk between the different zones 5, 6, 7, 8 will be the manufacture of the susceptor 1 from several thermally separated parts. This can be foreseen that the central zone 5 is mounted surrounded by the frame of the separating rim zone 8 which is heated independently. However, this solution has several drawbacks. Firstly, it is not manufactured from one piece of material of the susceptor 1. This makes manufacturing difficult and expensive as the errors between the plates of the different susceptors 1 must be small enough to allow uniform heating of the substrate 9. Second, it is very difficult to have a smooth temperature profile that fills the gap between the central zone 5 and the rim zone 8. Depending on the thickness of the substrate 9, the desired smearing between the two zones 5, 8 can not fully compensate for the heat loss due to the border of the central zone 5 and the rim zone 8.

  Accordingly, it is an object of the present invention to overcome the aforementioned drawbacks of the prior art, ie to provide a susceptor for setting a high uniformity of substrate temperature over a large area of substrate surface.

  This object is achieved by the independent claims. Advantageous embodiments are detailed in the dependent claims.

  In particular, the object is a susceptor for supporting a substrate in a vacuum process chamber, comprising a surface arranged opposite to the substrate and in thermal communication with the substrate, the susceptor comprising at least three susceptors. An adjacent zone, an outer zone, a central zone and an inner zone, said zones being arranged concentrically surrounding one another and extending along said surface, said outer zone completely covering said central zone The central zone completely surrounds the inner zone, the inner zone comprising at least one inner heating element affecting the inner zone, the outer zone at least one outer zone affecting the outer zone A heating element, the central zone being smaller than the minimum thickness of the inner zone and smaller than the minimum thickness of the outer zone, Exposing a large thickness, the thickness extends perpendicularly to the surface is achieved by the susceptor.

  Surprisingly, it has been found to provide a susceptor made of a single substance, for example aluminum, copper and / or carbon, providing at least three substrate temperatures of high uniformity across the substrate surface. If it is found to have different zones, and if the central zone between the outer zone and the inner zone is smaller in thickness than the surrounding zones, ie the inner zone and the outer zone, this causes the inner zone to be different. And both the external zones constitute heating elements for affecting the substrate in the respective zones. Such a susceptor according to the invention can provide strong maximum heating at the edges and corners of the substrate in the area of the inner zone while not negatively affecting or heating up. . Thus, the present invention can provide smooth temperature characteristics on a complete surface, resulting in high uniformity of substrate temperature and, for example, improved uniformity of coating thickness provided in a chemical vapor deposition process. Likewise, the susceptor according to the invention improves the quality of the substrate coating while reducing the manufacturing costs. In summary, the susceptor is provided to improve the properties of the coating layer as compared to conventional systems.

  The term "processing" according to the invention includes all chemical, physical and / or mechanical effects acting on a substrate.

The term "substrate" in the present invention includes components, parts or workpieces that are handled by the vacuum processing system in the present invention. The substrate is not limited to a flat shape or a plate shape having a rectangular shape, a square shape, or a circular shape. Preferably, the substrate is applied in the manufacture of thin film solar cells and comprises float glass, security glass and / or quartz glass. More preferably, the substrate is provided as a substantially flat substrate, such as a thin glass substrate, having a flat surface of 1 m ² or more in size.

  The terms "vacuum process" or "vacuum control system" of the present invention include an enclosure for substrates that are handled under pressure at least below atmospheric pressure.

  The terms "CVD", chemical vapor deposition, and its flavor of the present invention include the well-known techniques of removing layers on a heated substrate. Conventional liquid or gaseous precursor materials, gases, are provided to the process system and the layers are removed by thermal reaction of the precursors. Often DEZ, diethylzinc is used as a precursor material for the production of TCO layers in vacuum processing systems used for low pressure CVD. The term "TCO" stands for transparent conductive oxide, ie the TCO layer stands for transparent conductive layer, whereby the layers, coatings, removals and films of the above terms are CVD, LPCVD, plasma enhanced CVD It is used interchangeably in the above invention for films to be removed in a vacuum process (PECVD) or physical vapor deposition (PVD).

  The terms "solar cell" or "photovoltaic cell", "PV cell" of the present invention include an electrical component, the electrical component comprising light, substantially sunlight, and light energy directly by electrical energy. Allow conversion to Thin film solar cells typically include a first or front electrode, one or more semiconductor thin film PIN junctions, and a second or back electrode, which are sequentially stacked on a substrate. Each PIN junction or thin film light conversion unit comprises an i-layer sandwiched between p-layer and n-layer, where "p" represents positive doping and "n" represents negative doping. The i-layer is essentially the intrinsic semiconductor layer and accounts for the majority of the thin film PIN junction thickness. For this reason, light conversion mainly occurs in this i layer. Thus, the substrate is preferably a substrate used for the manufacture of thin film photovoltaic cells.

  The term "flat" of the present invention includes surfaces that are not rough or have no holes or the like. Preferably, the term "flat" means that the surface roughness grade of each surface is N9 or less.

  According to a preferred embodiment of the present invention, the minimum thickness of the inner zone is greater than the maximum thickness of the outer zone. In an advantageous embodiment, the thickness of the inner zone is smaller than that of the inner zone, which enables finer control of the temperature of the outer zone at each of the edges and / or edges of the substrate facing the outer zone. A uniform substrate temperature is provided across the surface, with the external zone having.

  In general, the small thickness of the central zone can be realized by any means known from the prior art, for example by long depressions, slits and / or drills. However, in a particularly preferred form of the invention, the susceptor comprises at least one recess having a rectangular cross-section for achieving the reduced thickness of the central zone. Preferably, the susceptor comprises two rectangular recesses, which are arranged behind each other, extending from the inner zone to the outer zone, preferably subdivided by partitions. More preferably, the recess is disposed on the side of the susceptor on which the substrate is disposed, that is, the opposite side to the surface. In this configuration, more preferably, the width of the recess parallel to the surface is 8 mm or more and 15 mm or less, preferably 11 mm.

  In another embodiment, the surface comprises an intermediate zone having the same thickness as the internal zone, the intermediate zone comprising a plurality of intermediate heating elements affecting the intermediate zone, the internal zones comprising a plurality of intermediate heating elements. It comprises an internal heating element, the central zone completely surrounds the intermediate zone, the intermediate zone completely encloses the internal zone, the internal heating element and the intermediate heating element being provided as a heating wire for each other, The internal heating wires have a larger wiring size and a larger space than each other than the intermediate wires. In such an embodiment, the inner zone is further separated into intermediate zones located adjacent to the central zone, thus allowing finer control of the substrate temperature. This also allows temperature equalization between different zones, which improves the quality of the coating.

  Preferably, all the heating elements are provided as heating wires, and in a particularly preferred embodiment of the above invention, within the susceptor. In a further embodiment, the heating element extends completely around the different zones and / or completely covers each zone.

  In another embodiment, the thickness of the central zone is 1 mm to 4 mm, preferably 2 mm, and / or the thickness of the inner zone is 10 mm to 20 mm, preferably It is 14 mm. The susceptor having such a thickness provides optimum temperature distribution across the surface of the susceptor, which results in an optimum temperature for the removal of layers on the heated substrate.

  In a particularly preferred embodiment, the susceptor comprises a honeycomb-like structure with recesses, provided between the pockets as pockets and bars, for achieving the small thickness of the central zone. Preferably, the width of the pocket extending parallel to the surface is 8 mm or more and 15 mm or less, preferably 11 mm. By providing such a honeycomb-like structure to realize the central zone of the sucept, the reliability of the substrate is maintained at high temperatures. The bars are increased in length, preferably with a standard susceptor thickness introduced. In other words, by providing such a honeycomb-like structure, the temperature gradient between the outer zone and the inner zone can be reduced. In a further embodiment, the outer zone, the central zone and / or the inner zone have a rectangular surface shape such that a rectangular substrate is located on the surface, whereby the border of the substrate and / or Or the edge is preferably located in the outer zone.

  The object of the invention is furthermore solved by a susceptor device comprising the aforementioned susceptor and the above-mentioned substrate, wherein the size of the said surface is larger than or equal to the size of the above-mentioned substrate.

  Furthermore, the object of the present invention is to add the long recess, the slit and / or the hole, which is arranged on the opposite side of the susceptor to the side on which the substrate is arranged. It is solved by the method realized. Further embodiments and the advantages of such a method can be derived by those skilled in the art from the aforementioned susceptor according to the invention.

  The object of the present invention is further to form a film on a substrate, to provide the aforementioned susceptor in a process chamber, to support the substrate on the surface of the susceptor, and to heat the substrate. Providing energy to the internal heating element and the external heating element, and supplying a precursor material to the process chamber to form the film on the substrate. Resolved.

These and other aspects of the invention are apparent from and will be elucidated by reference to the embodiments described hereinafter.
It is a top view which shows the conventional susceptor. It is a side view showing a conventional susceptor. It is a side view showing a susceptor concerning a desirable embodiment of the present invention. It is a side view showing a portion of a susceptor concerning a desirable embodiment of the present invention. It is a graph which shows the temperature characteristic of the substrate provided in the susceptor concerning a desirable embodiment of the present invention.

  FIG. 3 is a side view showing a susceptor 1 for supporting and thermally controlling a substrate 9 according to a preferred embodiment of the present invention. The susceptor 1 exhibits a thermally conductive, substantially flat, planar surface 11 facing the substrate 9 and has a non-contact thickness 12 measured in a direction perpendicular to the surface 11.

  The surface 11 represents at least three zones or zones 5, 6, 7 arranged concentrically around one another. The inner zone 5 is the innermost or central zone representing at least one inner heating element 13 which influences the inner sone 5. The outer or rim zone 7 completely covers the inner zone 5 and comprises areas in which the edges and corners 14 of the substrate 9 are arranged during operation of the heating plate 1.

  The central zone 6 is arranged between the inner zone 5 and the outer zone 7, completely surrounded by the outer zone 7 and completely surrounding the inner zone 5. According to the invention, the central zone 6 does not represent any heating device which actively influences the substrate 9 which is arranged in thermally conductive contact with the central zone 6. Also, the thickness 15 of the heating plate 1 in the central zone 6 is at least reduced in major part of the central zone 6 and smaller than the thickness 16 in the outer zone 7 and the thickness 12 in the inner zone 5.

  The heating plate 1 preferably consists of one member covering at least a substantial part of the inner zone 5, the central zone 6 and the outer zone 7, preferably the entire outer zone 7. The reduction of the thickness 15 of the central zone 6 is realized by means of long depressions or slits or holes arranged on the side of the plate 1 opposite to the side on which the substrate 9 is arranged, in which the recesses 23 are formed. In one embodiment, the heating plate 1 has a substantially rectangular shape to receive a rectangular substrate 9 such as a thin glass sheet.

  In order to partially heat the substrate 9 without affecting the overall temperature pattern of the heating plate 1, a positioned area 6 of the material of the thin susceptor 1 is introduced. The inner zone 5 for heating the wires 13 has wires of different dimensions, for example 4 mm, and the heating zone wires 17 of the intermediate zone 18, for example 3 mm, are arranged. The external heating element 19 is disposed below the susceptor 1 opposite to the substrate 9 that supports the substrate 11 and is fixed by the susceptor 1.

  The major difference between the conventional susceptor 1 shown in FIG. 2 and the present problem according to the invention shown in FIG. 3 is the thinness of the material of the susceptor 1 between the inner zone 5 and the outer zone 7. Here, the thickness 15 of the material of the susceptor 1, which is referred to as the so-called heat transfer zone or central zone 6 and which is orthogonal to the surface 11 of the susceptor 1 in comparison with the thickness 12 of 14 mm in the internal zone 5 It remains at ~ 4 mm. In the present embodiment, the distance 15 between the upper surface and the lower surface 11 of the susceptor 1 is only about 2 mm thick. In the embodiment, Al is used as a material of the susceptor 1 operating at about 200 ° C. In order to operate at these temperatures, a honeycomb-like structure 20 is used for the central zone 6, as shown in FIG.

  Most of the honeycomb structure 20 consists of a recess 23 with a pocket 21 having a width of 11 mm. If a transient of the smoother at temperature is required between the inner zone 5 and the outer zone 7 of the susceptor 1, the depth or width of the pocket 21 is different in the honeycomb structure 20. In the above embodiment, the external pocket 21 is deeper than the thickness of 4 mm of the internal pocket 21 by 2 mm in thickness of the susceptor 1. This makes it possible to reduce the temperature gradient between the outer zone 7 and the inner zone 5.

  This structure clearly allows the separation of the heating zones 5, 7 as can be seen from the following table. The actual temperatures of the heating zones 5, 7 are equal to the operator's settings for the heating plate 1. In this example, the zone temperatures are individually controlled as in the prior art exemplified above.

The operator reads the actual temperature setpoint internal zone 5 192 ° C 192 ° C
Middle zone 18 195 ° C 195 ° C
External zone 7 204 ° C 204 ° C

  By providing the above proposed configuration, a very uniform temperature distribution of the substrate 9 can be achieved. For example, FIG. 5 shows the temperature characteristics of a 3 mm glass substrate 9 on the plate of the susceptor 1 according to the present invention. The distance 15 from the top surface 11 of the susceptor 1 to the honeycomb structure 20 is at least 2 mm. The temperature scan achieves a 3 K temperature difference. The temperature settings of zones 5, 6, 7 are as follows.

Operator's set value Internal zone 1 192 ° C
Middle zone 18 195 ° C
External zone 7 204 ° C

  The configuration of this heating plate 1 can be widely used for any heating plate 1 and can be used to obtain good temperature uniformity on the substrate 9. In particular, it can be used for application to a wide area coating, such as manufacture of a thin film solar cell.

  The invention is shown and described in detail in the drawings and the foregoing specification. Such figures and descriptions are considered descriptions or examples, and not limiting, and the present invention is not limited to the disclosed embodiments. Other forms of the disclosed embodiments can be understood and attained by those knowledge in the practice of the claimed invention, from a study of the drawings, the disclosure and the appended claims. In the claims, the term "comprising" does not exclude other elements or steps, and the indefinite article "a" or "an" does not exclude a plurality. The mere fact that distinct measures are recited in mutually different dependent claims does not indicate that a combination of these measures can not be an advantage. All reference signs in the claims should not be construed as limiting.

  Reference Signs List 1 susceptor, 2 heating wiring, 3 heating wiring, 4 heating wiring, 5 first zone, internal zone, 6 second zone, central zone, 7 third zone, 8 rim zone, external zone, 9 substrate, 10 edge bar, 11 surface , 12 internal zone thickness, 13 internal heating elements, 14 edges and corners, 15 central zone thickness, 16 external zone thickness, 17 intermediate heating elements, 18 intermediate zones, 19 external heating elements, 20 like honeycomb Structure, 21 pockets, 22 bars, 23 recesses.

Claims (13)

A susceptor for supporting a substrate (9) in a vacuum process chamber, comprising a surface (11) arranged opposite to the substrate (9) and in thermal communication with the substrate (9),
The susceptor comprises at least three adjacent zones (5, 6, 8), an outer zone (8), a central zone (6) and an inner zone (5), the zones (5, 6, 8) , Arranged concentrically surrounding each other, extending along said surface (11),
The outer zone (8) completely surrounds the central zone (6), the central zone (6) completely surrounds the inner zone (5),
The internal zone (5) comprises at least one internal heating element (13) which influences the internal zone (5)
The external zone (8) comprises at least one external heating element (19) which influences the external zone (8)
The central zone (6) exposes a maximum thickness (15) smaller than the minimum thickness (12) of the inner zone (5) and smaller than the minimum thickness (16) of the outer zone (8), A susceptor, wherein each thickness (12, 15, 16) extends perpendicularly to said surface (11).   Susceptor according to claim 1, wherein the minimum thickness (12) of the inner zone (5) is greater than the maximum thickness (16) of the outer zone (8).   The susceptor (1) according to claim 1 or 2, characterized in that it comprises at least one recess (23) with a rectangular cross-section for achieving the small thickness (15) of the central zone (6). Susceptor.   The susceptor according to claim 3, wherein the width of the recess (23) parallel to the surface (11) is 8 mm or more and 15 mm or less, preferably 11 mm.   The susceptor (1) comprises an intermediate zone (18) having the same thickness (12) as the internal zone (5), the intermediate zone (18) influencing the intermediate zone (18) An intermediate heating element (17), the internal zone (5) comprising a plurality of internal heating elements (13), the central zone (6) completely surrounding the intermediate zone (18), the intermediate zone (18) ) Completely encloses the internal zone (5), the internal heating element (13) and the intermediate heating element (17) are mutually provided as heating interconnections, and the respective internal heating interconnections are separated from each other by the intermediate interconnections The susceptor according to any one of claims 1 to 4, wherein the susceptor has a larger wiring size and a larger space than the wiring.   Susceptor according to any of the preceding claims, wherein the heating element (13, 17, 19) is provided in the susceptor (1).   The thickness (6) of the central zone (6) is 1 mm or more and 4 mm or less, preferably 2 mm, and / or the thickness (12) of the inner zone (5) is 10 mm or more and 20 mm The susceptor according to any one of claims 1 to 6, which is less than or equal to 14 mm.   The susceptor (1) has the recesses (23) provided between the pockets (21) as pockets (21) and bars (22), the smaller thickness (15) of the central zone (6) The susceptor according to any one of the preceding claims, comprising a honeycomb-like structure (20) for realization.   The susceptor according to claim 8, wherein the width of the pocket (21) extending parallel to the surface (11) is 8 mm or more and 15 mm or less, preferably 11 mm.   Said outer zone (8), said central zone (6) and / or said inner zone (5) have a rectangular surface (11) shape such that a rectangular substrate (9) is positioned on said surface (11) Have a susceptor.   A susceptor device (1) comprising a susceptor (1) according to any of the preceding claims and the substrate (9), wherein the size of the surface (11) is the size of the substrate (9) Susceptor device, greater than or equal to.   A method of manufacturing a susceptor (1) according to any one of the preceding claims, wherein the small thickness (15) of the central zone (16) is the substrate in the susceptor (1). 9) A method realized by adding long recesses, slits and / or holes arranged on the side opposite to the side where the 9 is arranged. Forming a film on the substrate (9);
Providing the susceptor (1) according to any of claims 1 to 10 in a process chamber,
Supporting the substrate (9) on the surface (11) of the susceptor (1);
Providing energy to the internal heating element (13) and the external heating element (19) to heat the substrate (9);
Supplying precursor material to the process chamber to form the film on the substrate (9).

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