CN115074701A - Gas inlet device of semiconductor process equipment and semiconductor process equipment - Google Patents

Gas inlet device of semiconductor process equipment and semiconductor process equipment Download PDF

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Publication number
CN115074701A
CN115074701A CN202210610330.7A CN202210610330A CN115074701A CN 115074701 A CN115074701 A CN 115074701A CN 202210610330 A CN202210610330 A CN 202210610330A CN 115074701 A CN115074701 A CN 115074701A
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air inlet
gas
side wall
gas inlet
cylinder
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CN115074701B (en
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伊藤正雄
林源为
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Beijing Naura Microelectronics Equipment Co Ltd
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Beijing Naura Microelectronics Equipment Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/4558—Perforated rings
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C23C16/402—Silicon dioxide
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45587—Mechanical means for changing the gas flow
    • C23C16/45591—Fixed means, e.g. wings, baffles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment

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  • General Physics & Mathematics (AREA)
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Abstract

The invention discloses an air inlet device of semiconductor process equipment and the semiconductor process equipment, wherein the air inlet device comprises: air inlet cylinder and a plurality of first intake pipe, first toroidal cavity has inside the lateral wall of air inlet cylinder, a plurality of first through-holes of giving vent to anger have been seted up along its circumference to the lateral wall of air inlet cylinder, the diameter of first through-hole of giving vent to anger is not more than the default, a plurality of first intake pipes set up on the top of the surface of the lateral wall of air inlet cylinder along the circumference of air inlet cylinder equidistant, first intake pipe is along the radial extension of air inlet cylinder, the first toroidal cavity of one end intercommunication of first intake pipe, the other end of first intake pipe is used for letting in first technology gas. The lateral air inlet holes are prevented from being blocked by reactant particles, and the uniformity of lateral air inlet is improved.

Description

Gas inlet device of semiconductor process equipment and semiconductor process equipment
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to an air inlet device of semiconductor process equipment and the semiconductor process equipment.
Background
An important process in the fabrication of integrated circuit chips is the deposition of silicon oxide, which is typically performed by Plasma Enhanced Chemical Vapor Deposition (PECVD) methods suitable for low temperature deposition due to thermal budget considerations in integrated circuit fabrication. PECVD based on the Capacitively Coupled Plasma (CCP) principle can generally meet the requirements, but when deposition of silicon oxide needs to be performed in a structure with a certain aspect ratio, PECVD based on the CCP principle cannot meet the requirements because deposition is prone to generate a sealing effect at an opening of the structure with the aspect ratio, and thus a void (void) is formed inside the structure. For the deposition of silicon oxide with aspect ratio structures, many solutions have been proposed, such as high density plasma chemical vapor deposition (HDP CVD) based on Inductively Coupled Plasma (ICP) principle, sub-atmospheric chemical vapor deposition (SACVD), Flowable Chemical Vapor Deposition (FCVD), and so on. Although SACVD and FCVD have stronger pore-filling ability than HDP CVD, their film quality is worse than HDP CVD, their density is low, and they absorb moisture easily.
The existing HDP CVD equipment adopts SiH to be introduced into a process chamber 4 And O 2 The gas realizes the hole filling process of Shallow Trench Isolation (STI), interlayer dielectric (ILD), inter-metal dielectric (IMD), Passivation (Passivation) and the like, but because of SiH 4 And O 2 The direct mixing is easy to react chemically and causes particle problems, so that SiH needs to be fed through a gas inlet device in the existing high-density plasma chemical vapor deposition equipment 4 And O 2 Respectively introduced into the reaction chamber from the top and the side of the chamber.
However, the lateral air inlet of the existing air inlet device has the problems that the air inlet hole is easily blocked by reactant particles to cause abnormity and the lateral air inlet is not uniform.
Disclosure of Invention
The invention aims to provide an air inlet device of semiconductor process equipment and the semiconductor process equipment, which can prevent a lateral air inlet hole from being blocked by reactant particles and improve the uniformity of lateral air inlet.
In a first aspect, the invention provides a gas inlet device of semiconductor processing equipment, the semiconductor processing equipment comprises a reaction chamber and a bearing device arranged in the reaction chamber and used for bearing a wafer, the gas inlet device comprises a gas inlet cylinder and a plurality of first gas inlet pipes, a first annular cavity is arranged inside a side wall of the gas inlet cylinder, a plurality of first gas outlet through holes are formed in the side wall of the gas inlet cylinder along the circumferential direction of the gas inlet cylinder, the diameter of the first gas outlet through holes is not larger than a preset value, the plurality of first gas inlet pipes are arranged at the top end of the outer surface of the side wall of the gas inlet cylinder at equal intervals along the circumferential direction of the gas inlet cylinder, the first gas inlet pipes extend along the radial direction of the gas inlet cylinder, one end of each first gas inlet pipe is communicated with the first annular cavity, and the other end of each first gas inlet pipe is used for introducing a first process gas.
Optionally, the sidewall of the air inlet cylinder includes a first sidewall and a second sidewall that are concentrically disposed, the second sidewall is located at an outer periphery of the first sidewall, the first annular cavity is formed between the first sidewall and the second sidewall, and the first sidewall and/or the second sidewall are provided with a plurality of first air outlet through holes.
Optionally, the gas inlet device further comprises a plurality of first edge gas inlet pipelines, and one end of each first edge gas inlet pipeline penetrates through the side wall of the reaction chamber to be communicated with one first gas inlet pipe;
the top of the other end of the first air inlet pipe is provided with a first extension part extending transversely, the bottom of the one end of the first edge air inlet pipeline is provided with a second extension part extending transversely, and the first extension part is used for being in lap joint with the second extension part so that the first air inlet pipe is communicated with the first edge air inlet pipeline.
Optionally, the air inlet device further includes a cylindrical ring baffle, a top of the ring baffle is connected to a bottom of the air inlet cylinder, the ring baffle is coaxially disposed with the air inlet cylinder, the ring baffle is disposed around the carrying device, and the ring baffle can at least partially accommodate the carrying device along an axial direction of the carrying device.
Optionally, the top of the annular baffle is connected to the bottom of the air intake cylinder through a plurality of support rods, and each support rod is vertically overlapped with one of the first air intake pipes.
Optionally, a second annular cavity is formed in the side wall of the annular baffle, multiple layers of second air outlet through holes are formed in the inner wall surface of the side wall of the annular baffle along the circumferential direction of the annular baffle, and the diameter of each second air outlet through hole is not greater than the preset value;
the air inlet device further comprises a plurality of second air inlet pipes, the second air inlet pipes are arranged along the circumferential direction of the annular baffle plate at equal intervals and are arranged at the bottom end of the outer surface of the side wall of the annular baffle plate, the second air inlet pipes extend along the radial direction of the annular baffle plate, one ends of the second air inlet pipes are communicated with the second annular cavity, and the second air inlet pipes are multiple in number and are used for introducing second process gas.
Optionally, the gas inlet device further comprises a plurality of second edge gas inlet pipelines, and one end of each second edge gas inlet pipeline penetrates through the side wall of the reaction chamber to be communicated with one second gas inlet pipe;
the top of the other end of the second air inlet pipe is provided with a third extending part extending transversely, the bottom of the one end of the second edge air inlet pipeline is provided with a fourth extending part extending transversely, and the third extending part is used for being in lap joint with the fourth extending part so that the second air inlet pipe is communicated with the second edge air inlet pipeline.
Optionally, the preset value is 0.1mm to 1 mm.
Optionally, the gas inlet device further comprises a central gas inlet pipe located at the top of the reaction chamber, and the central gas inlet pipe is used for introducing a second process gas.
In a second aspect, the present invention provides a semiconductor processing apparatus, including the reaction chamber and the carrying device disposed in the reaction chamber for carrying a wafer, wherein the gas inlet device is the gas inlet device of the semiconductor processing apparatus in the first aspect.
The invention has the beneficial effects that:
the air inlet device adopts the air inlet cylinder to carry out lateral air inlet, the top end of the outer surface of the side wall of the air inlet cylinder is provided with a plurality of first air inlet pipes at equal intervals along the circumferential direction of the air inlet cylinder, a first annular cavity is arranged inside the side wall of the air inlet cylinder, a plurality of first air outlet through holes are formed in the side wall of the air inlet cylinder along the circumferential direction of the air inlet cylinder, one end of each first air inlet pipe is communicated with the first annular cavity, and the other end of each first air inlet pipe is used for introducing first process gas, because the diameter of each first air outlet through hole is not more than a preset value and the aperture is smaller, the airflow flows out quickly when the process gas is introduced, the plasma can be prevented from being poured backwards into the first air outlet through holes to form blockage, and in a plasma environment, the first air outlet through holes with small apertures are not easy to be ignited by electric discharge, the plasma is difficult to drill into the first air outlet through holes, and the blockage can be further avoided, simultaneously because a plurality of first admission pipes set up in the top of air inlet cylinder lateral wall along the circumference of air inlet cylinder at equal intervals, can effectively improve the gas distribution homogeneity in the first cavity.
The apparatus of the present invention has other features and advantages which will be apparent from or are set forth in detail in the accompanying drawings and the following detailed description, which are incorporated herein, and which together serve to explain certain principles of the invention.
Drawings
The above and other objects, features and advantages of the present invention will become more apparent by describing in more detail exemplary embodiments thereof with reference to the attached drawings, in which like reference numerals generally represent like parts.
Fig. 1 is a block diagram showing an intake device of the prior art one.
Fig. 2 is a structural view showing an intake device of the second prior art.
Fig. 3 is a front view showing an air intake apparatus according to embodiment 1 of the present invention.
Fig. 4 is a plan view showing an air intake device according to embodiment 1 of the present invention.
FIG. 5 is a schematic view showing top edge gas injection in a reaction chamber by a gas injection device according to example 1 of the present invention.
Fig. 6 is a schematic diagram showing the overlapping fit of the first intake pipe and the first edge intake pipe in the intake apparatus according to embodiment 1 of the present invention.
FIG. 7 is a schematic view showing bottom edge gas injection in a reaction chamber by a gas injection device according to example 2 of the present invention.
FIG. 8 is a schematic view showing the simultaneous top and bottom edge gas injection in a reaction chamber by a gas injection apparatus according to example 3 of the present invention.
FIG. 9 is a schematic view showing a gas inlet means of example 3 of the present invention for simultaneously introducing gas into the reaction chamber at the top edge and the bottom edge.
Detailed Description
As shown in FIG. 1, the prior art discloses a gas inlet structure, SiH, of a high density plasma chemical vapor deposition apparatus 4 And O 2 Respectively introduced into the reaction chamber from the top and the side of the chamber (only a side air inlet hole is shown in the figure, a top air inlet hole is not shown), wherein a plurality of air inlet pipes 106 for side air inlet are arranged on the circumferential direction of the chamber side wall 102 in the figure, an air inlet hole 110 is arranged at the end part of the air inlet pipe 106, the aperture of the air inlet hole 110 is large, and SiH exists 4 And O 2 Mix the problem that produces the granule and stop up the air inlet in advance to need change the inlet port one by one when equipment maintenance, relatively waste time, air inlet structure 106 needs the knob to turn off and adorn newly again in addition, and the position of dismantling the installation all need take the reference numeral to correspond at every turn, just can guarantee the homogeneity, and this air inlet structure still has the problem that the chamber wall is polluted by the deposit simultaneously.
As shown in FIG. 2, the second prior art discloses a ring-shaped gas inlet structure, SiH, of a high-density plasma chemical vapor deposition apparatus 4 And O 2 The gas is introduced into the reaction chamber from the top and the side of the chamber (only the side gas inlet hole is shown in the figure, the top gas inlet hole is not shown), the inner wall surface of the annular gas inlet pipeline 96 is provided with a vent hole 104, but only one end of the annular gas inlet pipeline 96 is communicated with an external gas circuit through a connecting pipe 98, so that the gas in the whole annular gas inlet pipeline 96 is unevenly distributed, the annular gas inlet pipeline 96 is difficult to process, and the equipmentMaintenance costs are high and there is a problem that the chamber wall is contaminated by the deposits.
The invention provides a plasma semiconductor process equipment air inlet device and semiconductor process equipment, which can prevent a lateral air inlet hole from being blocked by reactant particles, improve the uniformity of lateral air inlet and effectively prevent reactants from polluting the wall of a chamber.
The invention will be described in more detail below with reference to the accompanying drawings. While the preferred embodiments of the present invention are shown in the drawings, it should be understood that the present invention may be embodied in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art.
Example 1
As shown in fig. 3-6, an air inlet device of semiconductor processing equipment, the semiconductor processing equipment includes a reaction chamber and a bearing device arranged in the reaction chamber 200 and used for bearing a wafer, the air inlet device includes an air inlet cylinder 1 and a plurality of first air inlet pipes 2, a first annular cavity is arranged inside a side wall of the air inlet cylinder 1, a plurality of first air outlet through holes are arranged along the circumferential direction of the side wall of the air inlet cylinder 1, the diameter of the first air outlet through holes is not greater than a preset value, the plurality of first air inlet pipes 2 are arranged at the top end of the outer surface of the side wall of the air inlet cylinder 1 at equal intervals along the circumferential direction of the air inlet cylinder 1, the first air inlet pipes 2 extend along the radial direction of the air inlet cylinder 1, one end of each first air inlet pipe 2 is communicated with the first annular cavity, and the other end of each first air inlet pipe is used for introducing a first process gas.
In this embodiment, the sidewall of the air intake cylinder 1 includes a first sidewall and a second sidewall that are concentrically disposed, the second sidewall is located at the periphery of the first sidewall, a first annular cavity is formed between the first sidewall and the second sidewall, and a plurality of first air outlet holes are formed in the first sidewall and/or the second sidewall. Optionally, the preset value is 0.01-1 mm, and preferably, the diameter of the first air outlet through hole is 0.1 mm.
Specifically, as shown in fig. 3 and 4, the whole air intake cylinder 1 is in a shower head shape, the side wall of the air intake cylinder 1 is in a double-layer structure, a gap interlayer is arranged between the inner side wall and the outer side wall, the annular gap interlayer forms the annular cavity, the multiple first air intake pipes 2 on the top of the air intake cylinder 1 are used for uniformly conveying the process gas in the air cylinder to the air intake cylinder 1, so as to avoid uneven air intake caused by different gas pressures of various parts, the number of the first air intake pipes 2 can be changed as required, but symmetry needs to be maintained, such as 2, 4, 6 or 8. The optional range of the diameter of the opening of the first air outlet through hole on the air inlet cylinder 1 is 0.01-1 mm, preferably 0.1mm, the size of the opening is smaller than that of an air inlet hole (generally 0.35-0.5 mm) in the prior art, and the phenomenon that the reactant flows backwards into the air inlet hole to generate particles to block the air inlet hole can be effectively avoided.
The specific principle of avoiding the blockage of the first air inlet through hole is as follows:
the aperture of the first air inlet through hole is small, so that the airflow velocity is high, and the plasma can be prevented from flowing backwards into the inlet hole to form blockage; meanwhile, in a plasma environment, an electric field is gathered on the inner surface of the air inlet hole, parasitic plasma is enhanced nearby, according to the Paschen law (the breakdown voltage of the arc or discharge formed between two electrodes is a function of the product of the pressure of the gas and the distance between the electrodes), when the size (gap) is small to a certain degree, the gas is less prone to being ignited by the discharge at the position with the smaller size, namely the plasma is difficult to drill into the air hole, and therefore blocking objects are avoided.
Paschen's law: parallel plate capacitor DC breakdown voltage V B Is a function of the cavity pressure p and the gap spacing d as follows:
Figure BDA0003672994790000071
where A and B are constants associated with the gas properties and gamma is a constant associated with the parallel plate electrode material.
It should be noted that the inner peripheral wall surface of the intake cylinder 1 is not porous and has a large size, and therefore, the plasma is distributed according to paschen's law, and by-products are deposited, and the whole apparatus is removed and cleaned later when the chamber is maintained.
The wafer carrying device in this embodiment is an electrostatic chuck 203 in the reaction chamber 200, and the positional relationship between the gas inlet device and the electrostatic chuck 203 is as follows: the bottom end of the intake cylinder 1 is higher than the bearing surface of the electrostatic chuck 203, and in other embodiments, the bearing surface of the electrostatic chuck 203 may be located inside the intake cylinder 1, except that this may increase the risk of the intake hole being blocked: being too close to the electrostatic chuck 203 or even below the electrostatic chuck 203 may cause the inlet holes to become clogged by absorbing by-product particles from the wafer, and therefore it is preferable that the bottom end of the inlet cylinder 1 be higher than the carrying surface of the electrostatic chuck 203.
In this embodiment, the inner side and the outer side of the air intake cylinder 1 may be used for single-side independent air intake or double-side simultaneous air intake, that is, the first air outlet hole may be only disposed on the inner wall surface (inner side air intake) or the outer wall surface (outer side air intake) of the side wall of the air intake cylinder 1, or the first air outlet hole may be disposed on the inner surface and the outer surface of the side wall of the air intake cylinder 1 (inner side and outer side simultaneous air intake). Preferably, the first air outlet through holes are arranged in a multi-layer mode, and are uniformly formed in the side wall of the cylinder along the circumferential direction of the air inlet cylinder 1, so that the uniformity of air inlet is guaranteed.
As shown in fig. 4, in the present embodiment, the air inlet device further includes a plurality of first edge air inlet pipes 5, and one end of each first edge air inlet pipe 5 is communicated with one first air inlet pipe 2 through the side wall of the reaction chamber 200. One end of the first edge gas inlet pipeline 5 of this embodiment extends from the top of the reaction chamber 200 to the side wall of the reaction chamber 200, penetrates through the side wall of the chamber and is communicated with the first gas inlet pipe 2, and the other end of the first edge gas inlet pipeline 5 is connected with a gas source (such as a gas cylinder) of the first process gas.
As shown in fig. 5, the top of the other end of the first air inlet pipe 2 is provided with a first extension part 21 extending transversely, the bottom of one end of the first edge air inlet pipe 5 is provided with a second extension part 51 extending transversely, and the first extension part 21 is used for being in lap joint with the second extension part 51 so as to enable the first air inlet pipe 2 to be communicated with the first edge air inlet pipe 5.
Specifically, adopt overlap joint complex mode, when installing, first edge air inlet pipeline 5 only need directly take with the connection of first intake pipe 2 can, need not to seal (also can adopt the magnetic current body to seal when necessary) to this is convenient for get the operation of putting into with air inlet cylinder 1 and annular baffle 3 whole, easy to assemble and dismantlement, the maintenance of being convenient for.
Referring to fig. 3-6, in this embodiment, the air intake device further includes a ring baffle 3, the ring baffle 3 is cylindrical, the ring baffle 3 is disposed below the air intake cylinder 1, a top of the ring baffle 3 is connected to a bottom of the air intake cylinder 1, the air intake cylinder 1 is disposed coaxially with the ring baffle 3, the ring baffle 3 is configured to surround the bearing device, and the ring baffle 3 is capable of at least partially accommodating the bearing device along an axial direction of the bearing device.
Preferably, the outer diameter of the intake cylinder 1 is smaller than the inner diameter of the ring-shaped baffle 3, the inner diameter of the ring-shaped baffle 3 is larger than the diameter of the electrostatic chuck 203, and the ring-shaped baffle 3 surrounds the electrostatic chuck 203.
The top of the annular baffle 3 is connected with the bottom of the air inlet cylinder 1 through a plurality of support rods 4, and each support rod 4 is overlapped with one first air inlet pipe 2 in the vertical direction, so that the support rods 4 can be prevented from causing extra influence on an airflow field in the vertical direction in the technical process.
Specifically, the annular baffle 3 at the bottom of the gas inlet cylinder 1 can adsorb reaction by-products inside the reaction chamber 200, prevent the chamber wall from being contaminated by the by-products, and divide the reaction chamber 200 into two parts, improving the gas flow field inside the chamber.
In this embodiment, the diameter range of the ring-shaped baffle 3 is 300-400 mm, and the lower limit values of the diameters of the chambers with different wafer sizes are different, and the diameter size close to the wafer size is preferred. The height range of the annular baffle 3 is 1-200 mm, preferably 50 mm. Since the height of the annular baffle 3 has an effect on the absorption of byproducts, the bottom end of the annular baffle 3 generally needs to be at least recessed beyond the plane of the surface of the electrostatic chuck 203 and may extend to the bottom-most portion of the bottom electrode 204.
In this embodiment, the air intake cylinder 1 and the annular baffle 3 are made of metal or ceramic, and need to be grounded when the metal is selected.
In this embodiment, a central air inlet pipe is further included at the top of the reaction chamber 200 for introducing the second gasA process gas. The first process gas and the second process gas involved in this embodiment can directly undergo a chemical reaction to generate particles. For example, for plasma deposition of silicon oxide using a high density plasma chemical vapor deposition apparatus, the first process gas can be O 2 The second process gas may be SiH 4 Alternatively, the first process gas may be SiH 4 The second process gas can be O 2 。
In the present embodiment, the diameter of the gas inlet cylinder 1 is in the range of 0-400 mm, and the reaction chamber 200 is preferably 300mm for 12-inch wafers (the preferred value is different for different wafer sizes). The diameter of the gas inlet cylinder 1 may be smaller than or equal to the diameter of the wafer, and when smaller than the diameter of the wafer, it may be located within the diameter of the wafer, thereby directly dividing the wafer into a center region and an edge region, and the upper range of the diameter of the gas inlet cylinder 1 is related to the size of the wafer, for example, for a 12 inch wafer, 400mm diameter is the upper limit, and the preferred diameter is the same as the diameter of the wafer.
In the gas inlet device, as the uniformity of the gas flow field is difficult to adjust only by central gas inlet or edge gas inlet when the wafer size is larger, the reaction chamber 200 above the wafer can be divided into two parts through the structural design of the gas inlet cylinder 1 and the annular baffle 3, thereby improving the gas flow field inside the chamber. Specifically, the empty area in the center of the gas inlet cylinder 1 may facilitate the second process gas to directly reach the central area of the wafer from the center of the chamber top, the sidewall of the gas inlet cylinder 1 may directly gas in the empty area between the gas inlet cylinder 1 and the annular baffle 3, thereby facilitating the edge gas to directly reach the edge area of the wafer, so that the apparatus may be divided into the center gas inlet and the edge gas inlet, and the gas in the peripheral area of the annular baffle 3 may be directly pumped away by the vacuum apparatus 205 (vacuum pump) without reaching the wafer, thereby optimizing the distribution of the gas flow field, and the specific three-dimensional relationship is as shown in fig. 5.
Furthermore, when the diameter of the gas inlet cylinder 1 is equal to the diameter of the wafer, the gas inlet cylinder 1 mainly supplements the process gas in the edge region of the wafer, and the first gas outlet through hole is only formed in the first side wall of the inner side of the gas inlet cylinder 1, so that the gas inlet amount of the central gas inlet to the edge region of the wafer can be compensated. When the diameter of the gas inlet cylinder 1 is smaller than that of the wafer, the gas inlet cylinder 1 can divide the surface of the wafer into a central area and an edge area, at this time, a first gas outlet through hole can be selectively formed on the second side wall outside the gas inlet cylinder 1, the wafer exposed out of the inner side space of the gas inlet cylinder 1 can contact the central inlet gas introduced from the top of the chamber, and the wafer outside the gas inlet cylinder 1 can be introduced through the first gas inlet through hole on the second side wall to supplement the gas at the edge of the wafer and adjust the uniformity of the gas flow field. When the diameter of the air inlet cylinder 1 is smaller than that of the wafer, the first ventilation through holes can be simultaneously arranged on the first side wall and the second side wall of the air inlet cylinder 1, at the moment, the inner side of the air inlet cylinder 1 can be used for air inlet of the central area of the wafer, and the outer side of the air inlet cylinder 1 can be used for air inlet of the edge area of the wafer, so that the condition is suitable for the wafer with a larger size.
In addition, the air inlet device of the embodiment can be independently used without using the central air inlet at the top of the chamber, the air inlet of two process gases can be realized only through the air inlet cylinder 1, at this time, a third side wall can be arranged in the first annular cavity in the air inlet cylinder 1, the third side wall is concentrically arranged with the first side wall and the second side wall, the third side wall divides the first annular cavity into an inner annular sub-cavity and an outer annular sub-cavity which are respectively independent, one end of a part of the first air inlet pipe is communicated with the inner annular sub-cavity and is used for introducing the first process gas, the other first air inlet pipes are communicated with the outer annular sub-cavity and are used for introducing the second gas (preventing the two process gases from being mixed in advance), meanwhile, the first air inlet through holes are simultaneously arranged on the first side wall and the second side wall, the first process gas and the second process gas can respectively enter the inner annular sub-cavity and the outer annular sub-cavity and respectively enter the chamber from the first air outlet through holes on the first side wall and the second side wall, the simultaneous air intake of the inner and outer layers of the air intake cylinder 11 is realized. It should be noted that, this gas inlet method requires a smaller diameter of the vent cylinder, for example, the diameter of the vent cylinder is selected to be one third or one half of the wafer diameter, and the gas inlet cylinder 1 divides the wafer surface into a center region and an edge region, and the gas inlet cylinder 1 can simultaneously feed gas to the center region and the edge region of the wafer, so the center gas inlet at the top of the chamber may not be used. Simultaneously, the number of the first air inlet through holes in the first side wall and the second side wall of the air inlet cylinder 1 can be adjusted according to actual requirements, and then the air inlet amount is adjusted.
Example 2
As shown in fig. 7, on the basis of embodiment 1, a second annular cavity is provided inside the side wall of the annular baffle 3 in this embodiment, and multiple layers of second air outlet through holes are provided on the inner wall surface of the side wall of the annular baffle 3 along the circumferential direction of the annular baffle 3;
correspondingly, still include a plurality of second intake pipe 7, a plurality of second intake pipe 7 set up in the bottom of 3 lateral wall surfaces of ring baffle along the circumference of ring baffle 3 equidistant, and ring baffle 3 is followed to second intake pipe 7, and the one end intercommunication second toroidal cavity of second intake pipe 7, and the other end of a plurality of second intake pipe 7 is used for letting in second process gas.
And, further comprises a plurality of second edge air inlet pipes 6, and one end of each second edge air inlet pipe 6 is communicated with one second air inlet pipe 7 through the side wall of the reaction chamber 200.
The top of the other end of the second air inlet pipe 7 is provided with a third extending part extending transversely, the bottom of one end of the second edge air inlet pipeline 6 is provided with a fourth extending part extending transversely, and after the third extending part is in lap joint with the fourth extending part, the second air inlet pipe 7 is communicated with the second edge air inlet pipeline 6. The way the third extension portion and the fourth extension portion are fitted refers to the way the first extension portion 21 and the second extension portion 51 are fitted in fig. 6.
Preferably, the diameter of the second air outlet through hole is 0.01-1 mm, and more preferably 0.1 mm.
Referring to fig. 7, in this embodiment, a mode of combining bottom edge gas inlet and center gas inlet is adopted, that is, the second edge gas inlet pipeline 6 conveys the first process gas from the bottom of the reaction chamber 200 to the bottom of the annular baffle plate 3, and the first process gas enters the reaction chamber 200 through the second gas outlet hole on the annular baffle plate 3 to complete bottom edge gas inlet (at this time, the gas inlet cylinder 1 does not need to be communicated with the external gas path, and only the second edge gas inlet pipeline 6 feeds gas to the bottom of the annular baffle plate 3), and the top of the reaction chamber 200 passes through the centerThe gas inlet pipe conveys second process gas into the process chamber to complete central gas inlet. The first process gas may be O 2 The second process gas may be SiH 4 Alternatively, the first process gas may be SiH 4 The second process gas can be O 2 。
At this time, the annular baffle 3 not only plays a role of preventing the sediment from polluting the wall of the chamber, but also plays a role of guiding air.
In other embodiments, the cylindrical sidewall of the ring baffle may also be a single-layer sidewall and the sidewall does not have an opening, one end of the second gas inlet pipe is directly communicated with the space enclosed by the inside of the ring baffle 3, the first process gas can directly enter the space enclosed by the ring baffle 3 from the plurality of second gas inlet pipes, and the ring baffle can also play a role in preventing the deposits from polluting the wall of the chamber and guiding the gas.
Example 3
On the basis of the embodiments 1 and 2, the gas inlet device of the present embodiment can simultaneously perform edge gas inlet by using the gas inlet cylinder 1 and the annular baffle 3, so as to realize simultaneous edge gas inlet by separating two process gases.
As shown in fig. 8, one end of the first edge gas inlet pipe 5 extends from the top of the reaction chamber 200 to the side wall of the reaction chamber 200, penetrates through the side wall of the chamber and is communicated with the first gas inlet pipe 2, and the other end of the first edge gas inlet pipe 5 is connected with a gas source (such as a gas cylinder) of the first process gas, so that the first process gas can be conveyed to the top of the gas inlet cylinder 1, thereby realizing top edge gas inlet.
Meanwhile, one end of the second edge air inlet pipeline 6 extends to the side wall of the reaction chamber 200 from the bottom of the reaction chamber 200, penetrates through the side wall of the chamber and is communicated with the second air inlet pipe 7, the other end of the second edge air inlet pipeline 6 is connected with an air source (such as an air bottle) of second process gas, the second process gas can be conveyed to the top of the bottom of the annular baffle plate 3, and bottom edge air inlet is achieved.
The first process gas and the second process gas of this embodiment can directly react chemically to form particles, so the top edge of the first process gas enters and the bottom edge of the second process gas entersThe air intake needs to be performed simultaneously. For plasma deposition of silicon oxide using a high density plasma chemical vapor deposition apparatus, the first process gas can be O 2 The second process gas may be SiH 4 。
Another edge feed configuration of this embodiment is shown in FIG. 9 when the two sources are in fixed positions, such as the first process gas (e.g., O) 2 ) The gas source is from the top of the process chamber and a second process gas (e.g., SiH) 4 ) The gas source(s) is (are) from the bottom of the process chamber, the gas supply modes of the first process gas and the second process gas can be interchanged, i.e. the first process gas is delivered to the bottom of the annular baffle plate 3 through the second edge gas inlet pipe 6, and the second process gas is delivered to the bottom of the annular baffle plate 3 through the first edge gas inlet pipe 5.
Correspondingly, the first edge inlet pipe 5 and the second edge inlet pipe 6 need to be redesigned, and referring to fig. 9, one end of the second edge inlet pipe 6 extends from the top of the reaction chamber 200 to the side wall of the reaction chamber 200, penetrates through the side wall of the chamber and is communicated with the second inlet pipe 7 at the bottom of the annular baffle plate 3, and the other end of the second edge inlet pipe 6 is communicated with the first process gas (O) 2 ) Can deliver the first process gas to the bottom of the annular baffle 3, realizing bottom edge admission. Meanwhile, one end of the first edge gas inlet pipeline 5 extends from the bottom of the reaction chamber 200 to the side wall of the reaction chamber 200, penetrates through the side wall of the chamber and is communicated with the first gas inlet pipe 2, and the other end of the first edge gas inlet pipeline 5 is communicated with the second process gas (SiH) 4 ) Can deliver the second process gas to the top of the gas inlet cylinder 1, enabling top edge gas inlet.
The first process gas and the second process gas of this embodiment can be directly reacted to form the reactant, so the top edge and the bottom edge of the two process gases need to be fed simultaneously.
In other embodiments, in the case where the first edge intake pipe 5 and the second edge intake pipe 6 are fixed in position, the positions of the gas sources may be optionally changed, so as to exchange two gases, i.e., top edge intake gas and bottom edge intake gas.
Example 4
As shown in fig. 5, 7, 8 or 9, the present embodiment provides a semiconductor processing apparatus, which includes a reaction chamber 200 and a carrying device disposed in the reaction chamber 200 for carrying a wafer, wherein the gas inlet device is the gas inlet device of the semiconductor processing apparatus in any of embodiments 1 to 3.
Specifically, a first radio frequency coil 201 is arranged on the top wall of the reaction chamber 200, a second radio frequency coil 202 is arranged on the top of the side wall of the reaction chamber 200, and the first radio frequency coil 201 and the second radio frequency coil 202 are used for ionizing the process gas introduced into the reaction chamber 200 into plasma; an electrostatic chuck 203 for bearing the wafer is arranged below the inside of the reaction chamber 200, a lower electrode 204 is arranged below the electrostatic chuck 203, and the bottom of the reaction chamber 200 is communicated with a vacuumizing device 205; the gas inlet means is used for introducing a process gas into the reaction chamber 200. (ii) a The gas inlet device adopts the gas inlet device of the plasma semiconductor processing equipment of any embodiment 1-3.
The semiconductor processing equipment of the embodiment can comprise plasma-related semiconductor equipment such as high-density plasma chemical vapor deposition equipment, etchers, PVD equipment and the like.
By adopting the air inlet device in any of the embodiments 1 to 3, the semiconductor process equipment of the embodiment can effectively prevent the lateral air inlet hole from being blocked by reactant particles, improve the uniformity of lateral air inlet, and simultaneously can effectively prevent the reactant from polluting the wall of the chamber.
Having described embodiments of the present invention, the foregoing description is intended to be exemplary, not exhaustive, and not limited to the embodiments disclosed. Many modifications and variations will be apparent to those of ordinary skill in the art without departing from the scope and spirit of the described embodiments.

Claims (10)

1. The gas inlet device of the semiconductor process equipment comprises a reaction chamber and a bearing device arranged in the reaction chamber and used for bearing wafers, and is characterized in that the gas inlet device comprises a gas inlet cylinder and a plurality of first gas inlet pipes, wherein a first annular cavity is formed in the side wall of the gas inlet cylinder, a plurality of first gas outlet through holes are formed in the side wall of the gas inlet cylinder along the circumferential direction of the gas inlet cylinder, the diameter of each first gas outlet through hole is not larger than a preset value, the plurality of first gas inlet pipes are arranged at the top end of the outer surface of the side wall of the gas inlet cylinder at equal intervals along the circumferential direction of the gas inlet cylinder, each first gas inlet pipe extends along the radial direction of the gas inlet cylinder, one end of each first gas inlet pipe is communicated with the corresponding first annular cavity, and the other end of each first gas inlet pipe is used for introducing first process gas.
2. The air intake device of claim 1, wherein the side wall of the air intake cylinder comprises a first side wall and a second side wall which are concentrically arranged, the second side wall is located at the periphery of the first side wall, the first annular cavity is formed between the first side wall and the second side wall, and a plurality of first air outlet through holes are formed in the first side wall and/or the second side wall.
3. The air intake apparatus according to claim 1, further comprising a plurality of first edge intake conduits, each of the first edge intake conduits having one end communicating with one of the first intake pipes through a side wall of the reaction chamber;
the top of the other end of the first air inlet pipe is provided with a first extension part extending transversely, the bottom of the one end of the first edge air inlet pipeline is provided with a second extension part extending transversely, and the first extension part is used for being in lap joint with the second extension part so that the first air inlet pipe is communicated with the first edge air inlet pipeline.
4. The intake device according to claim 1, further comprising a cylindrical ring-shaped baffle, wherein a top of the ring-shaped baffle is connected with a bottom of the intake cylinder, and the ring-shaped baffle is coaxially arranged with the intake cylinder, the ring-shaped baffle is arranged to surround the bearing device, and the ring-shaped baffle can at least partially accommodate the bearing device along an axial direction of the bearing device.
5. The air intake apparatus of claim 4, wherein the top of the annular baffle is connected to the bottom of the air intake cylinder by a plurality of support rods, each of the support rods vertically coinciding with one of the first air intake tubes.
6. The air inlet device according to claim 4, characterized in that a second annular cavity is formed inside the side wall of the annular baffle, a plurality of layers of second air outlet through holes are formed in the inner wall surface of the side wall of the annular baffle along the circumferential direction of the annular baffle, and the diameter of each second air outlet through hole is not larger than the preset value;
the air inlet device further comprises a plurality of second air inlet pipes, the second air inlet pipes are arranged along the circumferential direction of the annular baffle plate at equal intervals and are arranged at the bottom end of the outer surface of the side wall of the annular baffle plate, the second air inlet pipes extend along the radial direction of the annular baffle plate, one ends of the second air inlet pipes are communicated with the second annular cavity, and the second air inlet pipes are multiple in number and are used for introducing second process gas.
7. The air intake apparatus according to claim 6, further comprising a plurality of second edge intake pipes, each of which has one end communicating with one of the second intake pipes through a side wall of the reaction chamber;
the top of the other end of the second air inlet pipe is provided with a third extending portion extending transversely, the bottom of the one end of the second edge air inlet pipeline is provided with a fourth extending portion extending transversely, and the third extending portion is used for being in lap joint with the fourth extending portion to enable the second air inlet pipe to be communicated with the second edge air inlet pipeline.
8. The intake device according to claim 1 or 6, wherein the preset value is 0.1mm to 1 mm.
9. The gas inlet device according to claim 5, further comprising a central gas inlet line at the top of the reaction chamber for introducing a second process gas.
10. Semiconductor processing equipment, comprising the reaction chamber and the carrying device arranged in the reaction chamber for carrying wafers, wherein the gas inlet device adopts the gas inlet device of the semiconductor processing equipment as claimed in any one of claims 1 to 9.
CN202210610330.7A 2022-05-31 2022-05-31 Air inlet device of semiconductor process equipment and semiconductor process equipment Active CN115074701B (en)

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