CN104046960A - Gas distributor applied to thin film deposition technology - Google Patents
Gas distributor applied to thin film deposition technology Download PDFInfo
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- CN104046960A CN104046960A CN201410286103.9A CN201410286103A CN104046960A CN 104046960 A CN104046960 A CN 104046960A CN 201410286103 A CN201410286103 A CN 201410286103A CN 104046960 A CN104046960 A CN 104046960A
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Abstract
The invention discloses a gas distributor applied to a thin film deposition technology. A gas distribution network formed by respectively communicating two groups of a plurality of gas distribution pipes mutually parallel with each other according to a horizontal alternate direction, is arranged in a body, the cross section areas of the gas distribution pipes are sequentially reduced symmetrically from a network center to an outer side direction, the lower pipe walls of the gas distribution pipes are uniformly provided with gas outlet pipes which protrude out of the lower surface of the body, reactant gas or steam which is introduced from a gas inlet pipe positioned on a network center position can be vertically and uniformly blown towards the surface of a covered silicon slice through the gas outlet pipes, and the blown gas easily blows residual gas inside the gas service pipes positioned on a network edge position cleanly, so that the uniformity of the introduced gas can be enhanced, the reaction and blowing efficiency can be increased, the gas consumption is saved, the equipment volume is reduced, and the CVD (Chemical Vapor Deposition) reaction can be prevented from being mistakenly generated in ALD (Atomic Layer Deposition) reaction due to uncleanly blowing.
Description
Technical field
The present invention relates to semiconductor atom layer deposition techniques field, more specifically, relate to a kind of be applied to semiconductor atom layer deposition techniques can uniformly distributing reactant gases and can prevent the gas distributor at ald mistiming generation chemical vapour deposition reaction.
Background technology
At present, thin film deposition reactive system and method are widely used in the equipment in multiple fields, as: semi-conductor, unicircuit, solar panel, flat-panel screens, microelectronics, photodiode etc.The film that utilizes chemical vapour deposition (Chemical Vapour Deposition, CVD) technology to form 10 μ m or be less than 10 μ m at substrate surface is a kind of common method of carrying out thin film deposition.Most CVD technology generally need to provide multiple gases or vapor deposition film former, to obtain performance and the chemical composition expected, and reactant gases is generally in reaction chamber, first to mix required reaction also occurs under certain condition.
And for example utilize ald (Atomic Layer Deposition in other thin film deposition processes, ALD) in the membrane deposition method that technology is carried out, require multiple reactant gases or steam to enter one after the other, continuously reaction chamber to select a mode, and can not react to each other before entering chamber.There is film certain characteristic, extremely thin because ALD technology has advantages of to generate, therefore, there is the incomparable using value of CVD technology in some application places, substituted CVD technology.The principle of ALD technology is the first reactant gases or steam to be entered to reaction chamber through a gas distributor, all surface (comprising substrate surface) the formation individual layer atomic shell that can contact at it by chemisorption or physical adsorption; After the entrap bubble not being adsorbed in by reaction chamber purges totally, in reaction chamber, pass into the second reactant gases or steam again, the individual layer atomic shell that is adsorbed on surface formation with the first reactant gases reacts, generate the film of expecting, and then the entrap bubble not being adsorbed in reaction chamber is purged clean.Repeat said process, until obtain the film thickness of expecting.Due to the characteristic of ALD technology, the first reactant gases and the second reactant gases must be independently, be passed in reaction chamber by gas distributor respectively.In ALD reaction, if met in the process that the first reactant gases and the second reactant gases are carried at gas, will react.This less desirable reaction is exactly a kind of CVD reaction in fact.Although in the CVD of some occasion reaction, by reactant gases or steam before entering reaction chamber, mix have advantages of certain, but, in ALD reaction, if some reactant gasess or steam meet in the process of carrying at gas for a certain reason, for example, at reaction chamber, there is our undesirable CVD reaction in the internal surface of gas transfer pipeline or gas distributor, to such an extent as to reactant gases or steam loss to some extent before entering reaction chamber, or reactant before enters reaction chamber and substrate surface, will affect quality and the effect of thin film deposition.
Due to periodicity and time sequence characteristic of ALD technology, before a kind of reactant gases is admitted to reaction chamber, another kind of reactant gases residual in reaction chamber is purged and totally just becomes an important process.In film deposition techniques, be generally to clear up the residual gas in chamber by the mode of exhaust and purging.Because blowing method speed is fast, efficiency is high, it is often prefered method.Blowing method is mainly by gas distributor and passes into low activity or rare gas element (as: helium, nitrogen, argon gas etc.) in chamber.And, if before passing into lower a kind of reactant gases, can reduce the time that purges residual gas, just can obviously improve the productivity in thin film deposition cycle, there is suitable economic worth.
The determinative that impact obtains the desired needed sweep gas scale of construction of film characteristics has a lot, and chemical property and the physical properties of for example reactant of some of them factor, be difficult to working control; Also have for example rare gas element flow velocity of some factors and need the spatial volume purging, can control by appropriate reactive system design and processes setting.But, although can be easy to realize automatic control to rare gas element flow velocity,, under the preformed prerequisite of depositing operation, rare gas element flow velocity adjustable extent is actual is very little.And, for preventing the excessive turbulization atmosphere surrounding of rare gas element flow velocity, entering gas distributor and reaction chamber thereby produce particulate, the flow velocity variable range of rare gas element is in fact also unsuitable excessive.Need the spatial dimension purging mainly to be formed to manifold volume and the internal space of the reaction chamber volume own of reaction chamber by gas distributor internal space volume, transport of reactant gases body.In general, need the spatial volume of purging less, purge cycles is also shorter.In addition, many CVD technology and ALD technology are to very sensitive with the intake uniformity of substrate surface reactant gases in reaction chamber, and the inhomogeneous meeting of air inlet causes substrate surface uneven film thickness.
Above-mentioned decision obtains the factor of the needed sweep gas scale of construction of desired film characteristics, to being used from the design of the gas distributor of carrying and can the effect of uniformly distributing reactant gases, has higher requirement.
Mono-kind of the Chinese invention patent application CN103194737A gas distributor for atomic layer deposition apparatus discloses a kind of gas distributor, by being arranged in atomic layer deposition apparatus reaction chamber, be positioned at the gas distributor of annular or the U-shaped gas path pipe formula of chip bench top, and be provided with the air outlet of several equally distributed outgassing directions and vertical direction bevel in the inside and outside both sides of gas path pipe, realize distribution and conveying to reactant gases.Although the disclosed gas distributor of this application for a patent for invention be arranged on pedestal (being above-mentioned chip bench) directly over, can realize the gas being blown into and cover whole substrate surface, cover incomplete problem to solve original substrate surface reactant gases, but because it is annular or U-shaped gas path pipe form, the distribution density of air outlet above substrate is lower, the area of the required covering of gas distributing from each air outlet is relatively large, and reactant gases is angle of inclination and blows to substrate surface, therefore the uniformity coefficient that, its gas passes into also has room for promotion; The form that arranges is like this for reaching good air blowing effect, spacing between gas distributor and pedestal can relative increase, and the expansion that this can bring the device space is unfavorable for that the efficiency of gas purging improves, and, also can cause because of the impact of exhaust the rising of gas consumption; In addition, the gas path pipe of this gas distributor has isometrical cross-sectional area, and along with reactant gases or steam enter from inlet mouth, while arriving air outlet by gas path pipe, the amount of reactant gases or steam reduces in fact gradually.This is that a part of gas is first advanced into reaction chamber by the air outlet of the nearly inlet mouth end of gas distributor due to the time difference of gas conveying and the impact of pipeline pressure reduction.So, this gas distributor with equal or close cross-sectional area pipeline, at the pipeline place of inlet mouth far-end, have than the pipeline of inlet mouth near-end larger internal space relatively, because pressure reduces the impact reducing with flow, sweeping gas is just difficult for clean front a kind of gas purging residual in pipeline herein.
Can find out by introduction above, for ALD reaction, be not wish to occur CVD reaction in reaction.If there is too much space at the pipeline place at gas distributor inlet mouth far-end, do not purged completely front a kind of reactant gases can with rear a kind of reactant gases generation interreaction, cause, at the corresponding position of substrate surface, undesirable CVD reaction occurs.Therefore, adopt the gas distributor of above-mentioned prior art, clean for the entrap bubble in pipeline is purged, certainly will extend purge time, and be difficult to quantified controlling, still can there is the risk that Local C VD reaction occurs by mistake.So above-mentioned prior art existence can cause that the relative device space is large, reactant gases and sweeping gas consumption is many, purge time is grown deficiency; The more crucial mistake generation that is to be difficult to avoid Local C VD reaction.Thereby, bring disadvantageous effect can to productive rate and yield raising and cost control.
Summary of the invention
The object of the invention is to overcome the above-mentioned defect that prior art exists, a kind of new gas distributor that is applied to film deposition techniques is provided, by by two groups of gas service pipess that become to be arranged in parallel respectively for the some gas service pipes design mix that distribute reactant gases or steam, between two groups by the horizontal alternate directions webbed gas distribution mesh network of shape that is interconnected, each gas service pipes from gas distribution mesh network center laterally direction cross-sectional area successively symmetry dwindle setting, and even tube wall is provided with some escape pipes below each gas service pipes, make escape pipe Vertical Uniform that the reactant gases that passes into from the inlet pipe of gas distribution mesh network central position or steam can distribute by numerous rules and blow to covered silicon chip surface, not only can improve the homogeneity that passes into gas, dwindle the mounting distance between gas distributor and silicon chip, realize the homogeneous reaction on silicon chip, improve reaction efficiency and reduction equipment volume, the feature that can also utilize each gas service pipes cross-sectional area to dwindle successively, make sweeping gas easily the entrap bubble of the gas service pipes that is positioned at gas distribution mesh network marginal position be purged clean, can avoid reacting between different reactant gases, realizing minimizing purge time, improve when purging efficiency, can effectively prevent from occurring CVD reaction in ALD reaction by mistake.
For achieving the above object, technical scheme of the present invention is as follows:
Be applied to a gas distributor for film deposition techniques, be located at the top inner wall of atomic layer deposition apparatus reaction chamber, be positioned at directly over the pedestal of placing silicon chip, it is characterized in that, described gas distributor comprises:
Body, the upper surface of described body has inlet mouth, and lower surface has the majority air outlet that rule distributes, in the view field that whole described air outlets forms in vertical described pedestal direction can cover the described silicon chip of placing on described pedestal;
Gas distribution mesh network, be located in described body, comprise between two groups of some gas service pipess that be arranged in parallel respectively by the horizontal alternate directions netted gas service pipes paths forming that is interconnected, described gas distribution mesh network sidepiece to described body centered by the point of crossing of 2 staggered main gas service pipess wherein launches, described in each in described gas distribution mesh network, gas service pipes extends to the sidepiece of described body, and has blind end at the sidepiece of described body; Above the described point of crossing place of 2 described main gas service pipess, tube wall is provided with inlet pipe, and described inlet pipe is to the described inlet mouth pass-out of described body, and is communicated with the air inlet source capsule road of described atomic layer deposition apparatus; Described in each gas service pipes below tube wall be evenly provided with respectively some escape pipes, the quantity of described escape pipe is consistent with the quantity of the described air outlet of described body, described in each, escape pipe is respectively to air outlet pass-out described in each of the described body of correspondence position, and vertically towards described pedestal setting; Wherein, the cross-sectional area of 2 described main gas service pipess is consistent, be positioned at 2 described main gas service pipess separately described in each of both sides gas service pipes by from described main gas service pipes laterally direction cross-sectional area dwindle successively setting, the cross-sectional area of the described gas service pipes of zygomorphy position is consistent to be separately positioned at 2 described main gas service pipess, and the cross-sectional area of described gas service pipes between alternate directions and corresponding described main gas service pipes with grade ordinal number is consistent.
Reactant gases or steam enter gas distribution mesh network by inlet pipe, then carry out uniformly distributing by the netted gas service pipes interconnecting; Meanwhile, carry out gas purging in reaction time time, sweeping gas can enter and uniformly distributing by above-mentioned passage too.Reactant gases or steam through uniformly distributing evenly blow to silicon chip by escape pipe, have ensured that the reaction on silicon chip evenly occurs; Meanwhile, carry out gas purging in reaction time time, sweeping gas can evenly blow out to reaction chamber by above-mentioned passage too.Because escape pipe quantity is more, and regularly vertically towards pedestal setting, make the distance between escape pipe lower surface and silicon chip can arrange very approachingly, just can ensure that reactant gases covers silicon chip fast, equably completely, so, also just correspondingly save the internal space of equipment cavity, can reduce the volume of equipment.Like this, not only can save the consumption of reactant gases, and, in the time carrying out gas purging, also can improve the efficiency of purging.
In general, first inlet pipe is arranged on to the central position of gas distribution mesh network, thereby make inlet pipe have certain symmetry, can make reactant gases or steam after over-allocation, enter equably reaction chamber, this is the feature that the present invention is different from prior art.
In addition, the gas path pipe of the gas distributor of prior art is owing to having isometrical cross-sectional area, along with reactant gases or steam enter from inlet mouth, while arriving air outlet by annular or U-shaped gas path pipe, the reactant gases distributing or the amount of steam reduce in fact gradually.This is that a part of gas is first advanced into reaction chamber by the air outlet of the nearly inlet mouth end of gas distributor due to the time difference of gas conveying and the impact of pipeline pressure reduction.So, this gas distributor with equal or close cross-sectional area gas path pipe, at the pipeline place of inlet mouth far-end, have than the pipeline of inlet mouth near-end larger internal space relatively, because pressure reduces the impact reducing with flow, sweeping gas is just difficult for clean front a kind of gas purging residual in pipeline herein.For the problems referred to above, the cross-sectional area of 2 main gas service pipess that are positioned at gas distribution mesh network center is designed to maximum by the present invention, the cross-sectional area of 4 gas service pipess that are positioned at gas distribution mesh network edge surrounding is designed to minimum, and all gas service pipess are arranged to webbed gas distribution mesh network by the form that therefrom mind-set edge dwindles symmetrically successively, make the each gas service pipes in gas distribution mesh network of the present invention there is the therefrom long-pending interior spatial structure reducing gradually of mind-set edge cross section, can be in ensureing that reactant gases or steam evenly enter reaction chamber, reduce purge time, improve and purge efficiency, and effectively prevent that in ALD reaction, CVD occurring by mistake reacts.
Further, the quantity of described gas distribution mesh network is 1 group or 2 groups, wherein, in the time that the quantity of described gas distribution mesh network is 2 groups, between the described gas distribution mesh network of each group, press upper, lower two layers of independent setting, and, between the described gas service pipes of the described gas distribution mesh networks of two layers by shifting to install, described body is provided with 2 described inlet mouths, described in 2 groups, the described inlet pipe of gas distribution mesh network is respectively to the described inlet mouth pass-out of described body, and be communicated with respectively wherein a kind of air inlet source capsule road of described atomic layer deposition apparatus, described body is provided with the described air outlet consistent with the whole described escape pipe quantity of gas distribution mesh network described in 2 groups, described in 2 groups described in each of gas distribution mesh network escape pipe respectively to air outlet pass-out described in each of correspondence position, in the view field that whole described escape pipe of the described gas distribution mesh network of each group forms respectively in vertical described pedestal direction can cover the described silicon chip of placing on described pedestal.In the time that the quantity of gas distribution mesh network is 2 groups, 2 groups of gas distribution mesh networks in the body of gas distributor in different planes, and by different admission passages being set and different outlet pipes separates, so, gas distributor inside can not occur one group of gas in gas distribution mesh network flow into another group in occur mix phenomenon.Situation when this kind of design is applied in and has 2 kinds of differential responses gas in reaction, can realize and manage specially, saves the time that differential responses gas switches, and has also improved stability and security that gas is carried simultaneously.
Further, the cross section of described gas service pipes is any one shape in circle, ellipse, rectangle, regular polygon or abnormal shape.Just because of the gas distribution mesh network design feature of netted alternative form of the present invention, make in the present invention, can expand the subject range for the shape of cross section of gas service pipes, there is the gas distribution mesh network that the gas service pipes of different cross section shape forms, the function of uniformly distributing and delivering gas can be realized well, and not residual front kind of reactant gases in pipeline can be in the time of gas purging, accomplished.
Further, described in each, the lower surface of escape pipe and the lower surface of described body are concordant, and equate with the distance of described pedestal, can save space on the one hand, can make on the other hand reactant gases or steam blow to silicon chip surface simultaneously and react.
Further, between the each described gas service pipes in described gas distribution mesh network by the setting that is interconnected of right angle alternate directions, and in same level.
Further, between the each described gas service pipes in described gas distribution mesh network by the setting that is interconnected of equidistant right angle alternate directions, and in same level.
Further, be positioned at 2 described main gas service pipess separately described in each of both sides gas service pipes by from described main gas service pipes laterally direction cross-sectional area successively with scaled down setting.
Further, be positioned at 2 described main gas service pipess separately described in each of both sides gas service pipes by from described main gas service pipes laterally direction cross-sectional area dwindle setting with homalographic amount successively.
Further, the adjacent cross-sectional area of described gas service pipes and the cross-sectional area of described main gas service pipes is consistent respectively with 2 described main gas service pipess, and other described gas service pipes dwindles setting with equal proportion or homalographic amount successively by the side direction cross-sectional area to described body.
Further, the total amount of dwindling of described cross-sectional area is 50～90%, be arranged in each cross-sectional area of outermost 4 gas service pipess of gas distribution mesh network and be main gas service pipes cross-sectional area 10～50%.
Can find out from technique scheme, the present invention by will being divided into two groups of gas service pipess that be arranged in parallel respectively in the body of gas distributor for the some gas service pipess that distribute reactant gases or steam, between two groups by the equidistant vertical interlaced direction of the level webbed gas distribution mesh network of shape that is interconnected, each gas service pipes from gas distribution mesh network center laterally direction cross-sectional area successively symmetry dwindle setting, and even tube wall is provided with some escape pipes below each gas service pipes, make escape pipe Vertical Uniform that the reactant gases that passes into from the inlet pipe of gas distribution mesh network central position or steam can distribute by numerous rules and blow to covered silicon chip surface, not only can improve the homogeneity that passes into gas, dwindle the mounting distance between gas distributor and silicon chip, realize the homogeneous reaction on silicon chip, improve reaction efficiency, save reactant gases consumption and reduction equipment volume, the feature that can also utilize each gas service pipes cross-sectional area to dwindle successively, make sweeping gas easily the entrap bubble of the gas service pipes that is positioned at gas distribution mesh network marginal position be purged clean, can avoid reacting between different reactant gases, realizing minimizing purge time, improve when purging efficiency, can effectively prevent from occurring CVD reaction in ALD reaction by mistake.Therefore, the present invention has the distinguishing feature that improves the productive rate of ALD reaction and yield and reduce costs.
Brief description of the drawings
Fig. 1 is the installation site schematic diagram that a kind of gas distributor that is applied to film deposition techniques of the present invention is positioned at atomic layer deposition apparatus reaction chamber;
Fig. 2 is a kind of structural representation of a kind of gas distributor that is applied to film deposition techniques of the present invention;
Fig. 3 is the structural representation of the gas distribution mesh network of a kind of gas distributor that is applied to film deposition techniques of the present invention;
Fig. 4 is the escape pipe installation site schematic diagram of the gas distribution mesh network of a kind of gas distributor that is applied to film deposition techniques of the present invention;
Fig. 5 is the another kind of structural representation of a kind of gas distributor that is applied to film deposition techniques of the present invention.
Embodiment
Below in conjunction with accompanying drawing, the specific embodiment of the present invention is described in further detail.
Embodiment mono-
In the present embodiment, refer to Fig. 1, Fig. 1 is the installation site schematic diagram that a kind of gas distributor that is applied to film deposition techniques of the present invention is positioned at atomic layer deposition apparatus reaction chamber.As shown in the figure, gas distributor 1 of the present invention is arranged on the top inner wall of atomic layer deposition apparatus reaction chamber 4, is positioned at directly over the pedestal 3 of placing silicon chip 2, and keeps certain distance with pedestal 3 and silicon chip 2.The profile of gas distributor 1 is cylindrical.The profile of gas distributor 1 is consistent with the shape of the silicon chip 2 of placing on pedestal 3 and pedestal 3; When the shape of silicon chip 2 is square, for example, while being square cell piece, gas distributor 1 is the corresponding square column type form that adopts also.
Please continue to refer to Fig. 1.Approach central position at gas distributor 1 top and picked out inlet pipe 5 and 6, inlet pipe 5 and 6 wherein a kind of air inlet source capsule road of connectivity device respectively.In the time reacting for ALD, pass into corresponding different reactant gases or steam (as upper arrow indication in figure) to inlet pipe 5 and 6, and passing into before different reactant gases or steam, also need to cut sweeping gas, gas service pipes paths and apparatus cavity are purged, entrap bubble in reactant gases or steam and chamber before residual in gas service pipes paths is purged totally, to avoid that less desirable CVD reaction occurs in the time that ALD reacts.Reactant gases or steam and sweeping gas are after the gas distribution mesh network in gas distributor 1 distributes, air outlet by gas distributor 1 below is vertically blown into chamber 4, and enters exhaust line discharge (as figure middle and lower part arrow indication) by the venting port 7 of chamber 4.The gas being vertically blown into by the air outlet of gas distributor 1 below or steam (as middle part arrow indication in figure), silicon chip 2 to be covered within the scope of its vertical projection, to ensure that the reactant gases or the steam-energy that blow to silicon chip 2 in the time that ALD reacts contact silicon chip 2 equably, thereby obtain uniform thin film deposition layer by reaction.The quantity of inlet pipe is corresponding with the group number of the gas distribution mesh network of gas distributor 1 interior setting, if when gas distribution mesh network is one group, inlet pipe is also one, in the time that ALD reacts, need in this inlet pipe, alternately cut different reactant gasess or steam and sweeping gas; If when gas distribution mesh network is two groups, inlet pipe is also two (inlet pipe 5 and 6 as shown in FIG.), can fixedly pass into respectively a kind of gas in different inlet pipe, implementation is managed special, save the time that differential responses gas switches, and improve stability and security that gas is carried.In the following description part of the present embodiment, the situation when being a group for gas distribution mesh network, (situation while being two groups for gas distribution mesh network will be further described in embodiment bis-) is elaborated.
Refer to Fig. 2, Fig. 2 is a kind of structural representation of a kind of gas distributor that is applied to film deposition techniques of the present invention.As shown in the figure, gas distributor comprises body 8, have an inlet mouth 9 at the upper surface of body 8, lower surface has the majority air outlet 11 that rule distributes, in the view field that whole air outlets forms in the vertical direction can cover the silicon chip of placing on pedestal.Be provided with between the some gas service pipess that be arranged in parallel respectively by two groups by the horizontal alternate directions netted gas distribution mesh network 10 forming that is interconnected in the interior level of body 8.The central position top tube wall that is positioned at the gas service pipes at gas distribution mesh Luo10 center is provided with the inlet pipe 5 being communicated with gas service pipes, and inlet pipe 5 is from inlet mouth 9 pass-outs of body 8 upper surfaces, and is communicated to the air inlet source capsule road of atomic layer deposition apparatus.
Please continue to refer to Fig. 2.Below each gas service pipes of gas distribution mesh network 10, even tube wall is provided with the escape pipe 12 that several are communicated with gas service pipes separately, and escape pipe 12, from air outlet 11 pass-outs of body 8 lower surfaces, is communicated with chamber.The lower surface of each escape pipe 12 is concordant with the lower surface of body 8 levels, makes reactant gases or steam can contact silicon chip simultaneously, to ensure the homogeneity of reaction.Each gas service pipes in gas distribution mesh network 10 extends to the sidepiece of body 8, and has blind end 13 and 14 (what mark in figure is the enclosed cross end of wherein 1 gas service pipes) at the sidepiece of body 8.Reactant gases or steam and sweeping gas (as shown in the stain in gas service pipes in figure) can be entered by inlet pipe 5 gas service pipes of gas distribution mesh network 10, after each gas service pipes distributes, vertically blow out and enter chamber downwards by each escape pipe 12.
Refer to Fig. 3, Fig. 3 is the structural representation of the gas distribution mesh network of a kind of gas distributor that is applied to film deposition techniques of the present invention.As shown in the figure, gas distribution mesh network level is located in the body of gas distributor (for ease of explanation, Fig. 3 separates gas distribution mesh network expression from the body of gas distributor), comprise the netted gas service pipes paths that 18 gas service pipes 15-1～15-9 being interconnected by equidistant right angle alternate directions level and 16-1～16-9 form, 9 gas service pipes 15-1～15-9 or 16-1～16-9 in different directions form respectively one group of parallel gas service pipes pipe passage.The cross section of each gas service pipes is circular.18 gas service pipes 15-1～15-9 in gas distribution mesh network and 16-1～16-9 are in same level.Each gas service pipes 15-1～15-9 in gas distribution mesh network and 16-1～16-9 (are virtual point in each the formation point of crossing, position 17 being interconnected, in figure, mark out the position of one of them, to understand), equidistant between any two point of crossing.
Please continue to refer to Fig. 3.Gas distribution mesh network is rounded to the side direction horizontal development of body centered by the point of crossing of 2 staggered main gas service pipes 15-1 and 16-1 (being positioned at the main gas service pipes 15-1 of inlet pipe 5 belows and the crossover location of 16-1).2 main gas service pipes 15-1 and 16-1 tube wall above the place of point of crossing are provided with inlet pipe 5; 18 gas service pipess tube wall below each point of crossing place being interconnected is respectively equipped with an escape pipe 12 (marking out one of them in figure).
Please continue to refer to Fig. 3.The cross-sectional area of 2 main gas service pipes 15-1 and 16-1 is consistent, be positioned at 2 main gas service pipes 15-1 and 16-1 separately 4 gas service pipes 15-3～15-9 of both sides and 15-2～15-8,16-3～16-9 and 16-2～16-8 by from main gas service pipes 15-1 and 16-1 laterally direction cross-sectional area dwindle setting with equal proportion or homalographic amount mode successively, from main gas service pipes 15-1 to two side directions, the cross-sectional area of gas service pipes 15-3～15-9 and 15-2～15-8 reduces gradually with equal proportion or homalographic amount mode order; From main gas service pipes 16-1 to two side directions, the cross-sectional area of gas service pipes 16-3～16-9 and 16-2～16-8 reduces gradually with identical equal proportion or homalographic amount mode order.The total amount of dwindling of each side gas service pipes cross-sectional area is 50～90%, be arranged in each cross-sectional area of gas distribution mesh network outermost 4 gas service pipes 15-8,15-9,16-8,16-9 and be respectively its main gas service pipes cross-sectional area 10～50%.
Please continue to refer to Fig. 3.The cross-sectional area of the gas service pipes of zygomorphy position is consistent to be separately positioned at 2 main gas service pipes 15-1 and 16-1, for example, gas service pipes 15-3 is consistent with the cross-sectional area of gas service pipes 15-2, and gas service pipes 16-3 is consistent with the cross-sectional area of gas service pipes 16-2, and by that analogy.The cross-sectional area of gas service pipes between alternate directions and corresponding main gas service pipes with grade ordinal number is consistent, for example, the inferior ordinal number of main gas service pipes is made as to one, gas service pipes 15-3 is second gas service pipes of its main gas service pipes 15-1 side, gas service pipes 16-3 is also second gas service pipes of its main gas service pipes 16-1 side, so, gas service pipes 15-3 is consistent with the cross-sectional area of gas service pipes 16-3, same, the inferior ordinal number of gas service pipes 15-8 and gas service pipes 16-8 is all five, so, their cross-sectional area is also consistent.
Please continue to refer to Fig. 3.Gas distribution mesh network (namely centered by inlet pipe 5) centered by the point of crossing of the staggered main gas service pipes 15-1 in 2 right angles and 16-1 launches to the sidepiece of body.18 gas service pipess in gas distribution mesh network extend to the sidepiece of body, and there is blind end 13 and 14 (what mark in figure is the enclosed cross end of wherein main gas service pipes 15-1) at the sidepiece of body, making gas or the steam of in pipe, flowing through can only (be the structure that represents gas service pipes inside Fig. 3 from the discharge of escape pipe direction, the port at gas service pipes two ends is not closed state, and the situation of Fig. 4 is identical).The quantity of each escape pipe 12 is consistent with the quantity of the air outlet of body lower surface, and position corresponding setting one by one.
Please continue to refer to Fig. 3.Above the point of crossing place of 2 main gas service pipes 15-1 and 16-1, tube wall is provided with 1 inlet pipe 5 straight up, and inlet pipe 5 is to the inlet mouth pass-out of body upper surface, with the air inlet source pipeline connection of equipment.Below all point of crossing place being interconnected at each gas service pipes 15-1～15-9 and 16-1～16-9, tube wall is respectively equipped with 1 escape pipe 12 straight down, each escape pipe 12 is communicated with chamber interior from the air outlet pass-out of body lower surface correspondence position respectively, and vertically towards pedestal setting.Like this, the inner level pipe paths that forms crisscross mutual perforation of whole gas distribution mesh network, and by inlet pipe and escape pipe, be connected together with air inlet source capsule road and the chamber interior of equipment.Reactant gases or steam enter gas distribution mesh network by inlet pipe, then carry out uniformly distributing by the netted gas service pipes interconnecting; Meanwhile, carry out gas purging in reaction time time, sweeping gas can enter and uniformly distributing by above-mentioned pipeline too.Reactant gases or steam and sweeping gas after each gas service pipes distributes, vertically blown out downwards by the escape pipe of each even rule setting, enters equably chamber.
Refer to Fig. 4, Fig. 4 is the escape pipe installation site schematic diagram of the gas distribution mesh network of a kind of gas distributor that is applied to film deposition techniques of the present invention.As shown in the figure, gas distribution mesh network (for ease of understand, gas distribution mesh network above-below direction in gas distribution mesh network in Fig. 4 and Fig. 3 is put upside down, can further illustrate the concrete installation site of each escape pipe) the below tube wall at all point of crossing place of being interconnected of each gas service pipes be respectively equipped with straight down 1 escape pipe 12 (what in figure, mark be one of them, because figure is through putting upside down the relation of processing, above-below direction in figure is contrary with actual direction), the quantity of escape pipe 12 is consistent with the quantity of each air outlet of body, and position is corresponding setting one by one.Each escape pipe, respectively to air outlet pass-out corresponding to body, vertically towards pedestal setting, and is communicated with chamber interior.The lower surface of each escape pipe is concordant with the lower surface of body level, equates ensureing with the distance of pedestal.Reactant gases or steam through uniformly distributing evenly side by side blow to silicon chip by escape pipe, have ensured that the reaction on silicon chip evenly occurs; Meanwhile, carry out gas purging in reaction time time, sweeping gas can evenly blow out to reaction chamber by above-mentioned pipeline too.Because escape pipe quantity is more, and regularly vertically towards pedestal setting, make the distance between escape pipe and silicon chip can arrange very approachingly, just can ensure that reactant gases covers silicon chip fast, equably completely, so, also just correspondingly save the internal space of equipment cavity, can reduce the volume of equipment.Like this, not only can save the consumption of reactant gases, and, in the time carrying out gas purging, also can improve the efficiency of purging.
In general, first inlet pipe is arranged on to the central position of gas distribution mesh network, thereby make inlet pipe have certain symmetry, can make reactant gases or steam after over-allocation, enter equably reaction chamber, this is the feature that the present invention is different from prior art.
In addition, the gas path pipe of the gas distributor of prior art is owing to having isometrical cross-sectional area, along with reactant gases or steam enter from inlet mouth, while arriving air outlet by annular or U-shaped gas path pipe, the reactant gases distributing or the amount of steam reduce in fact gradually.This is that a part of gas is first advanced into reaction chamber by the air outlet of the nearly inlet mouth end of gas distributor due to the time difference of gas conveying and the impact of pipeline pressure reduction.So, this gas distributor with equal or close cross-sectional area gas path pipe, at the pipeline place of inlet mouth far-end, have than the pipeline of inlet mouth near-end larger internal space relatively, because pressure reduces the impact reducing with flow, sweeping gas is just difficult for clean front a kind of gas purging residual in pipeline herein.For the problems referred to above, the cross-sectional area of 2 main gas service pipess that are positioned at gas distribution mesh network center is designed to maximum by the present invention, the cross-sectional area of 4 gas service pipess that are positioned at gas distribution mesh network edge surrounding is designed to minimum, and all gas service pipess are arranged to webbed gas distribution mesh network by the form that therefrom mind-set edge dwindles symmetrically successively, make the each gas service pipes in gas distribution mesh network of the present invention there is the therefrom long-pending interior spatial structure reducing gradually of mind-set edge cross section, can be in ensureing that reactant gases or steam evenly enter reaction chamber, reduce purge time, improve and purge efficiency, and effectively prevent that in ALD reaction, CVD occurring by mistake reacts.
In the present embodiment, gas distributor of the present invention can adopt by the body to solid the mode of mechanical workout, process the horizontal gas service pipes pipe passage that intersection interconnects in length and breadth of gas distribution mesh network from base side towards body interior, and the inlet pipe and the escape pipe that are communicated with to inner gas service pipes processing respectively by the upper and lower surface of body, then, then in body side the two ends of each gas service pipes are sealed.Also can process respectively body and gas distribution network, body is processed into dismountable cavity configuration, and then the gas distribution mesh network processing is installed into.These two kinds of processing modes can reach technical requirements of the present invention, in actual fabrication, can choose according to processing conditions.These two kinds of processing modes belong to conventional machining technology, therefore the present embodiment is introduced no longer one by one.
Embodiment bis-
In the present embodiment, refer to Fig. 5, Fig. 5 is the another kind of structural representation of a kind of gas distributor that is applied to film deposition techniques of the present invention.As shown in the figure, in the body 8 of gas distributor, be provided with two groups of gas distribution mesh networks 20 and 10.The structure formation of every group of gas distribution mesh network is consistent with the situation of one group of gas distribution mesh network in embodiment mono-, is no longer repeated in this description herein.Between two groups of gas distribution mesh networks 20 and 10, by upper and lower position layering, (numerical reference of using one group of gas distribution mesh network of embodiment mono-to being arranged in one group of gas distribution mesh network of lower floor) is independently set, every group of gas distribution mesh network be all centered by the point of crossing of the main gas service pipes staggered by 2 (centered by inlet pipe) to the side direction horizontal development of body 8, the closed at both ends of each gas service pipes is body sidepiece (referring to embodiment mono-).Between the gas distribution mesh network 20 He10 centers of upper and lower layer by shifting to install, between the gas service pipes of two groups of gas distribution mesh networks by shifting to install, to make mutually to stagger between 2 inlet pipe 6 and 5 of gas distribution mesh network of upper and lower layer and between whole escape pipes 21 and 12 (marking one of them in figure), can straight up and down arrange.
Please continue to refer to Fig. 5.Body 8 is provided with and 2 inlet pipe 6,5 and whole escape pipe 21,12 (marking one of them in figure) quantity consistent and inlet mouth 22,9 and air outlet 23,11 (marking one of them in figure) that position is corresponding respectively, 2 inlet pipe 6,5 approach respectively corresponding inlet mouth 22,9 pass-outs of medium position to body 8, respectively wherein a kind of air inlet source capsule road of connectivity device; Each escape pipe 21,12 is respectively to an air outlet 23,11 pass-outs of body 8 correspondence positions, and vertically towards pedestal setting.In the view field that whole escape pipe 21 or 12 of the gas service pipes of each group gas distribution mesh network 20 or 10 forms respectively in the direction of vertical pedestal can both cover the silicon chip of placing on pedestal.According to such set-up mode, in the inner phenomenon that one group of gas in gas distribution mesh network occurs in flowing into another group to mix (as schemed another a kind of gas of the horizontal dotted line representative in a kind of gas and lower floor's gas distribution mesh network 10 of stain representative in gas distribution mesh network 20 at the middle and upper levels, crossfire mixing phenomena can not occur each other) that just can not occur of gas distributor.Situation when this kind of design is applied in and has 2 kinds of differential responses gases or steam in reaction, can realize and manage specially, saves the time that differential responses gas or steam switch, and has improved stability and security that gas is carried.Other aspects and the embodiment mono-of this gas distributor are similar, repeat no more herein.
It should be noted that, the present invention is in principle, more than two groups gas distribution mesh networks can be set in the body of gas distributor, in the time that the quantity of gas distribution mesh network is many groups, any two groups of gas distribution mesh networks the body planted agent of gas distributor in different planes, and by different admission passages being set and different outlet pipes separates.The cross section of gas service pipes of the present invention can also be processed into any one shape in ellipse, rectangle, regular polygon or abnormal shape, just because of the gas distribution mesh network design feature of netted alternative form of the present invention, make in the present invention, can expand the subject range for the shape of cross section of gas service pipes, there is the gas distribution mesh network that the gas service pipes of different cross section shape forms, the function of uniformly distributing and delivering gas can be realized well, and not residual front kind of reactant gases in pipeline can be in the time of gas purging, accomplished.In gas distribution mesh network of the present invention, distinguish 4 adjacent gas service pipess due to more approaching with the position of main gas service pipes with 2 main gas service pipess, so, its cross-sectional area also can be identical with the cross-sectional area of main gas service pipes, is beneficial to gas and passes into the initial stage fast to gas distribution mesh network edge-diffusion; At other gas service pipess in these 4 gas service pipes outsides, still to dwindle setting with equal proportion or homalographic amount successively by the side direction cross-sectional area to body, and the total amount of dwindling of cross-sectional area is 50～90%, be arranged in each cross-sectional area of outermost 4 gas service pipess of gas distribution mesh network and be above-mentioned 2 main gas service pipess and 4 gas service pipess being adjacent wherein any one cross-sectional area 10～50%.
Above-described is only the preferred embodiments of the present invention; described embodiment is not in order to limit scope of patent protection of the present invention; therefore the equivalent structure that every utilization specification sheets of the present invention and accompanying drawing content are done changes, and in like manner all should be included in protection scope of the present invention.
Claims (10)
1. be applied to a gas distributor for film deposition techniques, be located at the top inner wall of atomic layer deposition apparatus reaction chamber, be positioned at directly over the pedestal of placing silicon chip, it is characterized in that, described gas distributor comprises:
Body, the upper surface of described body has inlet mouth, and lower surface has the majority air outlet that rule distributes, in the view field that whole described air outlets forms in vertical described pedestal direction can cover the described silicon chip of placing on described pedestal;
Gas distribution mesh network, be located in described body, comprise between two groups of some gas service pipess that be arranged in parallel respectively by the horizontal alternate directions netted gas service pipes paths forming that is interconnected, described gas distribution mesh network sidepiece to described body centered by the point of crossing of 2 staggered main gas service pipess wherein launches, described in each in described gas distribution mesh network, gas service pipes extends to the sidepiece of described body, and has blind end at the sidepiece of described body; Above the described point of crossing place of 2 described main gas service pipess, tube wall is provided with inlet pipe, and described inlet pipe is to the described inlet mouth pass-out of described body, and is communicated with the air inlet source capsule road of described atomic layer deposition apparatus; Described in each gas service pipes below tube wall be evenly provided with respectively some escape pipes, the quantity of described escape pipe is consistent with the quantity of the described air outlet of described body, described in each, escape pipe is respectively to air outlet pass-out described in each of the described body of correspondence position, and vertically towards described pedestal setting; Wherein, the cross-sectional area of 2 described main gas service pipess is consistent, be positioned at 2 described main gas service pipess separately described in each of both sides gas service pipes by from described main gas service pipes laterally direction cross-sectional area dwindle successively setting, the cross-sectional area of the described gas service pipes of zygomorphy position is consistent to be separately positioned at 2 described main gas service pipess, and the cross-sectional area of described gas service pipes between alternate directions and corresponding described main gas service pipes with grade ordinal number is consistent.
2. gas distributor as claimed in claim 1, is characterized in that, the quantity of described gas distribution mesh network is 1 group or 2 groups, wherein, in the time that the quantity of described gas distribution mesh network is 2 groups, between the described gas distribution mesh network of each group, press upper, lower two layers of independent setting, and, between the described gas service pipes of the described gas distribution mesh networks of two layers by shifting to install, described body is provided with 2 described inlet mouths, described in 2 groups, the described inlet pipe of gas distribution mesh network is respectively to the described inlet mouth pass-out of described body, and be communicated with respectively wherein a kind of air inlet source capsule road of described atomic layer deposition apparatus, described body is provided with the described air outlet consistent with the whole described escape pipe quantity of gas distribution mesh network described in 2 groups, described in 2 groups described in each of gas distribution mesh network escape pipe respectively to air outlet pass-out described in each of correspondence position, in the view field that whole described escape pipe of the described gas distribution mesh network of each group forms respectively in vertical described pedestal direction can cover the described silicon chip of placing on described pedestal.
3. gas distributor as claimed in claim 1 or 2, is characterized in that, the cross section of described gas service pipes is any one shape in circle, ellipse, rectangle, regular polygon or abnormal shape.
4. gas distributor as claimed in claim 1 or 2, is characterized in that, described in each, the lower surface of escape pipe and the lower surface of described body are concordant, and equates with the distance of described pedestal.
5. gas distributor as claimed in claim 1 or 2, is characterized in that, between the each described gas service pipes in described gas distribution mesh network by the setting that is interconnected of right angle alternate directions, and in same level.
6. gas distributor as claimed in claim 1 or 2, is characterized in that, between the each described gas service pipes in described gas distribution mesh network by the setting that is interconnected of equidistant right angle alternate directions, and in same level.
7. gas distributor as claimed in claim 1, is characterized in that, be positioned at 2 described main gas service pipess separately described in each of both sides gas service pipes by from described main gas service pipes laterally direction cross-sectional area successively with scaled down setting.
8. gas distributor as claimed in claim 1, is characterized in that, be positioned at 2 described main gas service pipess separately described in each of both sides gas service pipes by from described main gas service pipes laterally direction cross-sectional area dwindle setting with homalographic amount successively.
9. gas distributor as claimed in claim 1, it is characterized in that, the adjacent cross-sectional area of described gas service pipes and the cross-sectional area of described main gas service pipes is consistent respectively with 2 described main gas service pipess, and other described gas service pipes dwindles setting with equal proportion or homalographic amount successively by the side direction cross-sectional area to described body.
10. the gas distributor as described in claim 1,7,8 or 9, is characterized in that, the total amount of dwindling of described cross-sectional area is 50～90%.
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| CN201410286103.9A CN104046960B (en) | 2014-06-24 | 2014-06-24 | A kind of gas distributor being applied to film deposition techniques |
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