CN110093593A - One kind being used for large area pecvd process chamber bilayer exhaust structure - Google Patents
One kind being used for large area pecvd process chamber bilayer exhaust structure Download PDFInfo
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- CN110093593A CN110093593A CN201910418778.7A CN201910418778A CN110093593A CN 110093593 A CN110093593 A CN 110093593A CN 201910418778 A CN201910418778 A CN 201910418778A CN 110093593 A CN110093593 A CN 110093593A
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- vacuum
- exhaust
- exocoel
- cavity wall
- chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The invention discloses one kind to be used for large area pecvd process chamber bilayer exhaust structure, specifically includes that vacuum exocoel and vacuum lumen room includes the cavity wall for enclosing corresponding chambers, vacuum lumen room is set in vacuum exocoel；Showerhead electrode, lower electrode and substrate are set in vacuum lumen room, and substrate is located on lower electrode and is located at below showerhead electrode；Vacuum exocoel and vacuum lumen room constitute the exhaust structure of reaction zone and exhaust area bilayer, and vacuum exocoel and vacuum lumen room are provided with the exhaust pipe connecting with vacuum plant and exhaust pump group, and exhaust outlet is located in exhaust area；Reaction zone and exhaust area constitute different vacuum pressure differences；When work, reaction gas is wrapped in around substrate always in reaction zone, sufficiently reaction, deposition after, along running track flow to exhaust area after be discharged；The exhaust structure of this bilayer, the process gas avoided in reaction zone is contaminated, ensure that the uniformity of thicknesses of layers, the compactness of morphology reduce the internal stress of film.
Description
Technical field
The present invention relates to photovoltaic technology field, and in particular to a kind of pecvd process Chamber vacuum exhaust technique.
Background technique
PECVD(Plasma Enhanced Chemical Vapor Deposition) refer to the change of plasma enhancing
Learn gas phase deposition technology.I.e. under vacuum conditions, the low-temperature ion body generated by means of gas glow discharge, enhances reactant
The chemical activity of matter promotes the chemical reaction between gas, to go out required film layer in deposition on substrate.
Since PECVD film deposition process is completed in a dynamic gas supply, exhaust, want in substrate table
Face deposit thickness uniformly, the high-quality film layer such as dense structure, internal stress be small, just substrate surface should be made uniformly to be covered by aura layer always
Lid, making glow discharge zone reaction gas and generation gaseous product, quality is defeated across boundary layer and stratosphere and substrate layer
The track of fortune is looped around around substrate always, is made the collision between molecule in reactant, atom plasmoid and electronics, is dissipated
The intensity stabilization penetrating, ionize etc..
In existing PECVD device, as shown in Fig. 2, the exhaust system structure of processing chamber is often single layer exhaust form,
That is: processing chamber is a single layer, independent vacuum chamber, and lower electrode, substrate are located among vacuum chamber, is co-located at spray
Base part；Exhaust outlet is located at a side of cavity wall under vacuum chamber, when this structure leads to deposition film, fills in vacuum chamber
The track of the reaction gas operation entered, cannot uniformly cover and be wrapped in around substrate, the gas from exhaust outlet nearside, operation
Track is very short, and gas is not in time for sufficiently reacting just to be discharged quickly, and the gas from exhaust outlet distal side, running track are longer,
It is discharged after participating in adequately reaction, deposition, results in the thicknesses of layers in deposition on substrate uneven in this way, local film layer group
Knit it is not fine and close, internal stress increase the defects of.
Summary of the invention
The technical problem to be solved by the present invention is to overcome the deficiencies in the prior art, and the present invention provides one kind to be used for large area
Pecvd process chamber bilayer exhaust structure, processing chamber are made of vacuum exocoel and vacuum lumen room, have reaction zone, row
Gas area, the double-deck exhaust structure；When work, it is filled with the reaction gas of vacuum lumen room, with exhaust pipe and the row of exhaust pump group
Gas process, the running track of reaction gas is equably covered always and is wrapped in around substrate in vacuum lumen room, substrate surface
Always by aura layer uniform fold, make glow discharge zone reaction gas and generate gaseous product across boundary layer and in stratosphere
The track of mass transport is looped around around substrate always between substrate layer, after reaction zone is sufficiently reacted, deposited, along operation rail
Mark is discharged after flowing to exhaust area.Reaction zone and exhaust area constitute different vacuum pressure differences.Reaction zone vacuum pressure is greater than
Exhaust area vacuum pressure has ensured that the process gas in reaction zone is not polluted always by non-process gas, ensure that on substrate
The uniformity of the thicknesses of layers deposited, the compactness of morphology, while reducing the internal stress of film.
The technical scheme adopted by the invention is that: it provides a kind of for large area pecvd process chamber bilayer exhaust knot
Structure characterized by comprising vacuum exocoel, cavity seal circle, inner cavity chamber's sealing ring, vacuum lumen room, chamber upper flange,
Showerhead electrode, substrate, lower electrode, inner cavity chamber's valve, exocoel valve are vacuum-evacuated pump group, exhaust pipe, lower rise fall of electrodes system
System, reaction zone, exhaust area；The vacuum exocoel and vacuum lumen room include the cavity wall for enclosing corresponding chambers, described true
Empty inner cavity chamber is set in vacuum exocoel；The reaction zone on the inside of vacuum lumen indoor and the chamber upper flange by enclosing
At the exhaust area is led to by enclosing on the inside of cavity wall outer concave slot under vacuum lumen room and cavity wall under the vacuum exocoel
Cavity wall groove center position through-hole under vacuum lumen room is crossed, the reaction zone and exhaust area is made to constitute different vacuum pressure differences；Institute
It states showerhead electrode and the lower electrode and the substrate is arranged in chamber in vacuo, the lower electrode is located at the showerhead electrode
Lower section, the substrate is located at the top of the lower electrode, is set to vacuum lumen room i.e. reaction zone center jointly；It is described
Vacuum exocoel and vacuum lumen room are provided with the exhaust pipe connecting with vacuum plant and exhaust pump group and lower rise fall of electrodes
System；As a preferred technical solution of the present invention, the cavity wall of the vacuum exocoel is around the vacuum lumen room
Cavity wall setting, and the cavity wall being distributed on the wherein same direction is the shared cavity wall of the two, remaining is distributed in all directions
Distance is provided between the cavity wall of the two.
As a preferred technical solution of the present invention, the shared cavity wall is chamber upper flange, and passes through cavity seal
Circle and inner cavity chamber's sealing ring and the vacuum exocoel and vacuum lumen room, which are constituted, to be tightly connected, and setting direction is top.
As a preferred technical solution of the present invention, the chamber upper flange is towards being arranged on the side of vacuum lumen room
Fluted, the top of the showerhead electrode is installed in the groove.
As a preferred technical solution of the present invention, under the lower cavity wall of vacuum exocoel and the vacuum lumen room
The center of cavity wall is each provided with a through-hole, and two through hole is distributed with one heart.
As a preferred technical solution of the present invention, the lower cavity wall outer side center position of the vacuum lumen room is provided with
The boss being higher by, is provided with rectangular or circular groove on the inside of the boss, the groove with the boss is concentric is distributed,
The lower surface of the boss is fixedly connected with the inner surface of the lower cavity wall of the vacuum exocoel using non-tight；The groove
Cavity wall inner surface constitutes certain thickness under upper surface and the vacuum lumen room, and with cavity wall under the vacuum exocoel
Distance is equipped between inner surface.
As a preferred technical solution of the present invention, cavity wall is provided with an exhaust outlet under the vacuum exocoel, and
The cavity wall inside grooves position under the vacuum lumen room, it may be assumed that be located in exhaust area；The exhaust pump group and exhaust pipe are logical
It crosses on the outside of flange sealing structure and cavity wall exhaust outlet under the vacuum exocoel and is fixedly connected.
As a preferred technical solution of the present invention, the lower rise fall of electrodes system passes through vacuum seal structure and institute
It states and is fixedly connected on the outside of cavity wall under vacuum exocoel, and the through hole center from cavity wall center under the vacuum lumen room,It is fed into describedIt in vacuum lumen room, and is fixedly connected with the middle position of the lower electrode lower part, the lower electrode can be by institute
Lower rise fall of electrodes system drive is stated, is moved up and down along the vertical direction.
It is outer at substrate transfer mouth in the cavity wall of vacuum exocoel two sides as a preferred technical solution of the present invention
Side is provided with exocoel valve, and outside at substrate transfer mouth, is provided with inner cavity chamber's valve in the cavity wall of vacuum lumen room two sides
Door.
Compared with prior art, the beneficial effects of the present invention are: a kind of be vented for large area pecvd process chamber bilayer
Structure, processing chamber are made of vacuum exocoel and vacuum lumen room, have reaction zone, exhaust area, the double-deck exhaust structure；Work
When, it is filled with the reaction gas of vacuum lumen room, with exhaust pipe and the exhaust process of exhaust pump group, is reacted in vacuum lumen room
The running track of gas is equably covered always and is wrapped in around substrate, and substrate surface by aura layer uniform fold, makes always
Glow discharge zone reaction gas and gaseous product is generated across boundary layer and the mass transport stratosphere and substrate layer
Track is looped around around substrate always, after reaction zone is sufficiently reacted, is deposited, along running track flow to exhaust area after arranged
Out.Reaction zone and exhaust area constitute different vacuum pressure differences.Reaction zone vacuum pressure is greater than exhaust area vacuum pressure, ensures
Process gas in reaction zone is not polluted always by non-process gas, ensure that the uniform of the thicknesses of layers deposited on substrate
Property, the compactness of morphology, while the internal stress of film is reduced, improve film quality；This processing chamber bilayer row
Depressed structure, the plated film demand suitable for various pecvd process chambers.
Detailed description of the invention
Fig. 1 is of the invention a kind of for large area pecvd process chamber bilayer exhaust structure schematic diagram；
Fig. 2 is a kind of existing pecvd process chamber single layer exhaust structure schematic diagram；
In figure: 1 vacuum exocoel, 2 cavity seal circles, 3 inner cavity chamber's sealing rings, 4 vacuum lumen rooms, 5 chamber upper flanges, 6 sprays
Electrode, 7 substrates, 8 lower electrodes, 9 inner cavity chamber's valves, 10 exocoel valves, 11 vacuum evacuation pumps, 12 exhaust pipes, 13 lower electrodes
Jacking system, 14 exhaust areas, 15 reaction zones.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
Attached drawing is please referred to, Fig. 1 is of the invention a kind of for large area pecvd process chamber bilayer exhaust structure schematic diagram；
Fig. 2 is a kind of existing pecvd process chamber single layer exhaust structure schematic diagram；The embodiment of the invention provides one kind to be used for large area
Pecvd process chamber bilayer exhaust structure, comprising: vacuum exocoel (1) as shown in Figure 1 and vacuum lumen room (4) are including enclosing
The cavity wall of corresponding chambers is synthesized, vacuum lumen room (4) are set in vacuum exocoel (1)；Chamber upper flange (5) is towards in vacuum
On the side of chamber (4), setting is fluted, and the top of showerhead electrode (6) clamps in a groove, showerhead electrode (6) and lower electrode
(8) and substrate (7) is arranged in chamber (4) in vacuo, and lower electrode (8) is located at the lower section of showerhead electrode (6), and substrate (7) is located at
The upper surface of lower electrode (8) is set to vacuum lumen room (4) i.e. reaction zone (15) center jointly；Vacuum exocoel (1)
The center of lower cavity wall and the lower cavity wall of vacuum lumen room (4) is each provided with a through-hole, and two through hole is distributed with one heart.
The lower cavity wall outer side center position of vacuum lumen room (4) is provided with the boss being higher by, the side of being provided on the inside of boss
Shape or circular groove, groove with boss is concentric is distributed, the inner surface of the lower cavity wall of the lower surface and vacuum exocoel (1) of boss
It is fixedly connected using non-tight；Cavity wall inner surface constitutes certain thickness, groove under the upper surface and vacuum lumen room (4) of groove
Distance is equipped under lower surface and vacuum exocoel (1) between the inner surface of cavity wall, is formed exhaust area (14)；Vacuum lumen room (4)
It is enclosed reaction zone (15) on the inside of inside and chamber upper flange (5), the through-hole of cavity wall groove center under vacuum lumen room (4),
The vacuum pressure difference for keeping reaction zone (15) different from exhaust area (14) composition；Cavity wall is provided with an exhaust under vacuum exocoel (1)
Mouthful, it is located at cavity wall inside grooves position under vacuum lumen room (4), it may be assumed that be located in exhaust area；The exhaust pump group and exhaust pipe
Road on the outside of flange sealing structure and cavity wall exhaust outlet under vacuum exocoel (1) by being fixedly connected.
By vacuum seal structure and under vacuum exocoel (1), cavity wall outside is fixedly connected lower rise fall of electrodes system (13),
Through hole center from cavity wall center under vacuum lumen room (4) is fed into vacuum lumen room (4), and under lower electrode (8)
The middle position in portion is fixedly connected, and lower electrode (8) can be driven by lower rise fall of electrodes system (13), is moved up and down along the vertical direction.
Outside in the cavity wall of vacuum exocoel (1) two sides at substrate transfer mouth, is provided with exocoel valve (10), in vacuum
Outside at substrate transfer mouth, is provided with inner cavity chamber's valve (9) in the cavity wall of chamber (4) two sides.Inner cavity chamber's valve (9) is located at outside vacuum
In chamber (1).
A kind of exhaust structure for large area pecvd process chamber bilayer of the invention, makes to be filled with vacuum lumen room
Reaction gas first enters back into exhaust area after reaction zone participates in sufficiently reaction, is finally discharged by exhaust pump group.In vacuum lumen room
The running track of reaction gas is equably covered always and is wrapped in around substrate, and substrate surface is uniformly covered by aura layer always
Lid, making glow discharge zone reaction gas and generation gaseous product, quality is defeated across boundary layer and stratosphere and substrate layer
The track of fortune is looped around around substrate always, after reaction zone is sufficiently reacted, deposited, converges to lower electrode following middle position,
By the through-hole in cavity wall middle position under processing chamber, after flowing to exhaust area along running track, using the final quilt of exhaust outlet
Exhaust pipe and exhaust pump group discharge.
Due to the exhaust structure of pecvd process chamber bilayer, make processing chamber that there is double-deck vacuum space, it may be assumed that reaction
Area and exhaust area.Reaction zone vacuum pressure is greater than exhaust area vacuum pressure, ensured process gas in reaction zone always not by
Other non-process gases are polluted；The exhaust structure of this bilayer avoids in existing single layer exhaust structure, and reaction gas cannot
It uniformly covers and is wrapped in around substrate, gas running track is uneven, and the gas from exhaust outlet nearside does not have enough time also filling
Phenomena such as point reaction is just discharged quickly, and gas from exhaust outlet distal side participates in the overlong time of reaction, causes to sink on substrate
The defects of long-pending thicknesses of layers is uneven, and local morphology will not be close, and internal stress increases, improves the deposition quality of film layer,
Plated film demand suitable for various pecvd process chambers.
The present embodiment is only used to illustrate the technical scheme of the present invention rather than its limitations, although referring to above-described embodiment to this
Invention is described in detail, and those of ordinary skill in the art can still carry out a specific embodiment of the invention
Modification perhaps equivalent replacement these without departing from any modification of spirit and scope of the invention or equivalent replacement, in the present invention
Within claims.
Claims (10)
1. one kind is used for large area pecvd process chamber bilayer exhaust structure characterized by comprising vacuum exocoel (1),
Cavity seal circle (2), inner cavity chamber's sealing ring (3), vacuum exocoel (4), chamber upper flange (5), showerhead electrode (6), substrate
(7), lower electrode (8), inner cavity chamber's valve (9), exocoel valve (10) are vacuum-evacuated pump group (11), exhaust pipe (12), lower electricity
Pole jacking system (13), exhaust area (14), reaction zone (15)；The vacuum exocoel (1) and vacuum lumen room (4) include
The cavity wall of corresponding chambers is enclosed, the vacuum lumen room (4) is set in vacuum exocoel (1)；The showerhead electrode (6) and
The inside of chamber (4) in vacuo is arranged in the lower electrode (8) and the substrate (7), and the lower electrode (8) is located at the spray
The lower section of electrode (6), the substrate (7) are located at the top of the lower electrode (8)；The vacuum exocoel (1) and vacuum lumen
Room (4) is provided with the exhaust pipe (12) connecting with vacuum plant and exhaust pump group (11) and lower rise fall of electrodes system (13)；
The vacuum exocoel (1) is provided with exocoel valve (10), and skill chamber (4) is provided with inner cavity chamber's valve (9) in the vacuum；
The reaction zone (15), exhaust area (14) enclosed by vacuum exocoel (1) and vacuum lumen room (4) and chamber upper flange (5) and
At.
2. according to claim 1 a kind of for large area pecvd process chamber bilayer exhaust structure, it is characterised in that institute
It states cavity wall of the cavity wall of vacuum exocoel (1) around the vacuum lumen room (4) to be arranged, and is distributed on the wherein same direction
The cavity wall shared cavity wall that both is, is provided with distance between the cavity wall of remaining distribution the two in all directions.
3. according to claim 2 a kind of for large area pecvd process chamber bilayer exhaust structure, it is characterised in that institute
Stating shared cavity wall is chamber upper flange (5), and is passed through outside chamber sealing ring (2) and inner cavity chamber's sealing ring (3) and the vacuum
Chamber is that room (1) and vacuum lumen room (4) constitutes sealed connection, and setting direction is top.
4. according to claim 3 a kind of for large area pecvd process chamber bilayer exhaust structure, it is characterised in that chamber
The side setting of room upper flange (5) towards vacuum lumen room (4) is fluted, and the top of the showerhead electrode (6) is installed on described
In groove.
5. according to claim 1 a kind of for large area pecvd process chamber bilayer exhaust structure, it is characterised in that institute
State the lower cavity wall of vacuum exocoel (1) and the lower cavity wall of the vacuum lumen room (4) center be each provided with one it is logical
Hole, two through hole are distributed with one heart.
6. according to claim 1 a kind of for large area pecvd process chamber bilayer exhaust structure, it is characterised in that institute
State on the outside of the lower cavity wall of vacuum lumen room (4), around the boss being higher by is provided centrally with, be provided on the inside of the boss it is rectangular or
Circular groove, the groove with the boss is concentric is distributed, cavity wall under the boss lower surface and the vacuum exocoel (1)
Inner surface is fixedly connected using non-tight；Cavity wall inner surface structure under the upper surface of the groove and the vacuum lumen room (4)
At certain thickness, and distance is equipped between the inner surface of cavity wall under the vacuum exocoel (1).
7. according to claim 1 a kind of for large area pecvd process chamber bilayer exhaust structure, it is characterised in that institute
Reaction zone (15) is stated by enclosing on the inside of vacuum lumen room (4) on the inside of the chamber upper flange (5)；The exhaust area (14) by
It is enclosed on the inside of cavity wall outer concave slot and cavity wall under the vacuum exocoel (1) under vacuum lumen room (4)；And pass through vacuum lumen
Under room (4) cavity wall groove center through-hole make the reaction zone (15) from the exhaust area (14) are each has different vacuum pressures by oneself.
8. one kind according to claim 1 or 6 is used for large area pecvd process chamber bilayer exhaust structure, feature exists
Cavity wall is provided with an exhaust outlet under the vacuum exocoel (1), and is located in exhaust area；The exhaust pump group (11) and row
Feed channel (12) is fixedly connected by flange sealing structure with the exhaust outlet of cavity wall under the vacuum exocoel (1).
9. a kind of according to claim 1 or 5 be used for large area pecvd process chamber bilayer exhaust structure, feature exists
It is fixed on the outside of cavity wall under the lower rise fall of electrodes system (13) is by vacuum seal structure and the vacuum exocoel (1) to connect
It connects, and the through hole center from cavity wall center under the vacuum lumen room (4)It is fed into describedIn vacuum lumen room (4), and with institute
The middle position for stating lower electrode (8) lower part is fixedly connected；The lower electrode (8) can be driven by the lower rise fall of electrodes system (13)
It moves up and down along the vertical direction.
10. according to claim 1 a kind of for large area pecvd process chamber bilayer exhaust structure, it is characterised in that
It in the cavity wall of vacuum lumen room (4) two sides at substrate transfer mouth, is provided with inner cavity chamber's valve (9), inner cavity chamber's valve (9)
Positioned at the inside of the vacuum exocoel (1), outside at substrate transfer mouth, setting in the cavity wall of vacuum exocoel (1) two sides
There is exocoel valve.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910418778.7A CN110093593A (en) | 2019-05-20 | 2019-05-20 | One kind being used for large area pecvd process chamber bilayer exhaust structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910418778.7A CN110093593A (en) | 2019-05-20 | 2019-05-20 | One kind being used for large area pecvd process chamber bilayer exhaust structure |
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| CN110093593A true CN110093593A (en) | 2019-08-06 |
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| CN201910418778.7A Pending CN110093593A (en) | 2019-05-20 | 2019-05-20 | One kind being used for large area pecvd process chamber bilayer exhaust structure |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114032526A (en) * | 2021-11-10 | 2022-02-11 | 哈尔滨工业大学 | Integrated high-quality diamond MPCVD growth equipment without external raw material gas and growth method |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH09266201A (en) * | 1996-03-27 | 1997-10-07 | Matsushita Electric Ind Co Ltd | Plasma cvd apparatus |
| US5772770A (en) * | 1995-01-27 | 1998-06-30 | Kokusai Electric Co, Ltd. | Substrate processing apparatus |
| CN103402299A (en) * | 2008-04-07 | 2013-11-20 | 应用材料公司 | Lower liner with integrated flow equalizer and improved conductance |
| KR101518398B1 (en) * | 2013-12-06 | 2015-05-08 | 참엔지니어링(주) | Substrate process apparatus |
| US20170067157A1 (en) * | 2015-09-08 | 2017-03-09 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus |
-
2019
- 2019-05-20 CN CN201910418778.7A patent/CN110093593A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5772770A (en) * | 1995-01-27 | 1998-06-30 | Kokusai Electric Co, Ltd. | Substrate processing apparatus |
| JPH09266201A (en) * | 1996-03-27 | 1997-10-07 | Matsushita Electric Ind Co Ltd | Plasma cvd apparatus |
| CN103402299A (en) * | 2008-04-07 | 2013-11-20 | 应用材料公司 | Lower liner with integrated flow equalizer and improved conductance |
| KR101518398B1 (en) * | 2013-12-06 | 2015-05-08 | 참엔지니어링(주) | Substrate process apparatus |
| US20170067157A1 (en) * | 2015-09-08 | 2017-03-09 | Hitachi Kokusai Electric Inc. | Substrate processing apparatus |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114032526A (en) * | 2021-11-10 | 2022-02-11 | 哈尔滨工业大学 | Integrated high-quality diamond MPCVD growth equipment without external raw material gas and growth method |
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Application publication date: 20190806 |