CN103334092A - Pipeline cooled gas distribution device used for metal organic chemical vapour deposition reactor - Google Patents
Pipeline cooled gas distribution device used for metal organic chemical vapour deposition reactor Download PDFInfo
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- CN103334092A CN103334092A CN201310233117XA CN201310233117A CN103334092A CN 103334092 A CN103334092 A CN 103334092A CN 201310233117X A CN201310233117X A CN 201310233117XA CN 201310233117 A CN201310233117 A CN 201310233117A CN 103334092 A CN103334092 A CN 103334092A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45572—Cooled nozzles
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
Abstract
The invention discloses a pipeline cooled gas distribution device used for a metal organic chemical vapour deposition reactor. The pipeline cooled gas distribution device comprises a gas spray tray, wherein a gas connecting plate is arranged above the gas spray tray, and a gas distribution plate is arranged between the gas connecting plate and the gas spray tray; and cooling liquid pipelines are arranged between every two structural plates, and each cooling liquid pipeline is made by bending one pipeline or splicing and welding multiple pipelines. The gas spraying head is also provided with a plurality of gas channels which are isolated from each other, such as a first precursor gas channel, a second precursor gas channel and a carrier gas channel, wherein the gas channels are connected with corresponding gas ports and can feed corresponding gases into a reaction chamber independently. According to the pipeline cooled gas distribution device used for a metal organic chemical vapour deposition reactor, pipeline type cooling is adopted, so that manufacturing difficulty of a spraying head is reduced, and sealing property and sealing reliability of the cooling liquid pipelines in the spraying head are improved.
Description
Technical field
The present invention relates to a kind of distribution device in gas-fluid for chemical vapour deposition (spray header), particularly a kind of gas spray header of tubular type cooling.
Background technology
MOCVD(Metal Organic Chemical Vapor Deposition) equipment, i.e. metal-organic chemical vapor deposition equipment, it especially has the effect of irreplaceability in semiconductor industry in the LED industry, be crucial especially equipment.This equipment is to break through the industry development bottleneck, improves the strategic high-tech semiconductor equipment of level of industry.
MOCVD equipment is a kind of each subject such as Fluid Mechanics Computation, heating power conduction, system integration control, compound growth that integrate, and is the equipment of a kind of high-tech, new technology high concentration; The principle of work of MOCVD is that the metallorganics source (MO source) of containing II family or III family element and the gas source that contains VI family or group are reacted at wafer under the condition of strictness control, and growth obtains needed thin-film material.Common metal organism source transports by carrier gas and enters reaction chamber, carrier gas can for hydrogen, nitrogen, rare gas element etc. not with the gas of reactant react with, the carrier gas that contains the MO source is called first precursor gases; The gas source that contains VI family or group generally also is mixed with a certain proportion of carrier gas, is called second precursor gases.
The temperature of MOCVD substrate surface when carrying out technology can reach 1200 ℃, the temperature of substrate pallet (slide glass dish) is higher, gas spray header (spray header) is positioned at slide glass dish top, and (be no more than 80mm with the distance of slide glass dish is very little, the reaction chamber distance of part model has only about 10mm), so the power of its raying heating is very big.And the gas spray header is only lower at self-temperature, just can have the performance of the needs that satisfy technology under the uniform situation of surface temperature field.Can cause the reactant source material in the inner decomposition of gas spray header because gas spray header temperature is higher than 150 ℃, reduce the utilization ratio of source material, and influence deposition film quality.And the inhomogeneous meeting of gas spray header surface temperature field causes slide glass panel surface non-uniform temperature, thereby causes substrate surface deposit film composition and membrane thickness unevenness, so the design of Cooling System of spray header is an important component part of spray header design.
At present, the cooling passage Design and Machining mode of generally using in the spray header mainly contains following two kinds: 1) get through the hole at spray header, through hole is connected on request carry out branch bond pads UNICOM formation cooling duct then.2) dig out formation cooling passage groove at the corresponding construction plate of forming spray header in advance, use modes such as vacuum diffusion welding connects, vacuum fusion welding to adopt aspectant mode to weld each structural slab then, make the groove sealing of processing in advance, form cooling passage, a kind of oblique formula gas spray header for the metal organic chemical vapor deposition reactor is disclosed as Chinese patent application CN201210118049.8, it comprises the gas injection plate that is positioned at the reaction chamber top, gas web plate and gas distribution grid; Described gas web plate is provided with some gas interfaces and coolant connection, but also there be integrity problem and the difficulty of processing problem of weld seam under hot conditions in this application.
Along with single batch of production-scale expansion of MOCVD, the size of spray header is also increasing, therefore it is also increasing with the ratio in aperture to punch, divide bond pads UNICOM to form cooling passage mode medium-length hole hole depth, therefore the difficulty of deep hole machining is also increasing, and the processing of the cooling passage deep hole in the large size spray header is very difficult at present.And the MOCVD spray header is a kind of to the exigent part of structure precision, under current size, existed and added the very high problem of scrap rate in man-hour, from the data of processing producer acquisition, yield rate has only about 1/3 at present, so the processing charges of MOCVD spray header is high always.At MOCVD spray header load facility, behind the composition complete machine, the spray header weld seam leaks and can cause workpiece and well heater damage, thereby causes the MOCVD reaction chamber to damage, and brings enormous economic loss in addition.Default cooling passage groove, the method of using face-face welding to form cooling passage then also exists complex process, the high problem of processing scrap rate, and in technological process because there is the bigger temperature difference in the spray header upper and lower surface, therefore also there is bigger stress in spray header inside, the welding of this opposite-face form face--the sealing reliability of face weld seam is a very big challenge, is unfavorable for the raising of MOCVD equipment dependability.
Summary of the invention
For fear of difficult deep hole processing when processing the spray header cooling passage, occurring, simultaneously can reduce showerhead configuration plate face-face requirement of welding, the present invention aims to provide a kind of tube-cooled formula distribution device in gas-fluid for the metal organic chemical vapor deposition reactor, the reliability height of this tube type cooling device good seal performance, sealing, its sealing reliability is not subjected in the MOCVD technological process because the stress influence that spray header upper and lower surface temperature head causes, thereby reduced the scrap rate of product, improved production efficiency.
To achieve these goals, the technical solution adopted in the present invention is:
A kind of tube-cooled formula distribution device in gas-fluid for the metal organic chemical vapor deposition reactor, comprise the gas injection plate that is positioned at the reaction chamber top, this gas injection plate top is provided with the gas web plate, is provided with at least three stacked gas distribution grids between described gas injection plate and gas web plate; Its constructional feature is, between described gas injection plate and the undermost gas distribution grid, be provided with coolant duct between the adjacent two layers gas distribution grid; The cooling fluid import and export that described gas web plate is provided with some gas interfaces, survey meter installation window and is communicated with described coolant duct, and form some separate gas passages after described gas injection plate, gas distribution grid, gas web plate are superimposed, this gas passage comprises the first precursor gases passage, second precursor gases passage and the carrier gas passage; The upper and lower side of the downside of the upper side of described gas injection plate, gas web plate and each gas distribution grid is equipped be used to two grooves that hold coolant duct, separate by slit between two grooves, horizontally disposed in the bending of described groove internal cooling liquid pipeline; Described survey meter is installed in the window and is provided with the slit that is communicated with gas interface; Be equipped with coolant duct on described gas web plate and each gas distribution grid through hole is installed.
Below be the technical scheme of further improvement of the present invention:
According to embodiments of the invention, described gas distribution grid preferably has three.
The cross section of described groove is semicircle, semicircular string and described slit conllinear.
The quantity of described coolant duct is the 1-16 root.Further, when coolant duct was many, many coolant ducts were separate cooling channel.
For firm described coolant duct, being connected between described coolant duct and gas injection plate, gas web plate, the gas distribution grid adopt vacuum diffusion welding to connect in succession or vacuum fusion welding connects or is located by connecting with described groove.
The cross section of described groove is half elliptic or Polygons.
In order to detect the chip warpage degree, described survey meter is installed window chip warpage degree measuring sonde is installed.
By said structure, the present invention includes gas web plate and gas injection plate, between affiliated gas web plate and gas injection plate, there are some gas distribution grids.Between gas injection plate and the gas distribution grid and between the gas distribution grid cooling duct is being installed, this cooling duct is to make (or many pipeline downhand weldings are made) by single stainless steel tube bending.Described gas web plate is provided with some gas interfaces and cooling duct through hole, and this gas distribution grid and gas injection plate are provided with the gas passage of some mutual isolation, described gas passage is communicated with corresponding gas interface, as the first precursor gases passage, the second precursor gases passage, carrier gas passage etc.All design flutedly among the present invention on gas injection plate and the corresponding gas distribution grid, groove cross section is semicircle, rectangle, U-shaped or half-oval shaped, and the groove loop shape designs according to the cooling duct cooling loop.Cooling duct uses the single pipe bending to make among the present invention, also can use the mode of many pipeline weldings to make coolant duct.
Among the present invention for spray header is better cooled off, between jet tray and the gas distribution grid, can the multilayer cooling duct be installed according to cooling requirement between gas distribution grid and the gas distribution grid.
The coolant duct number of plies is the 1-4 layer, and the adjacent layers coolant duct is interspersed.
Cooling duct can be directly installed between spray header two structural slabs among the present invention, as a kind of preferred version, can also use methods such as vacuum fusion welding or vacuum diffusion welding connect to weld together cooling duct and structural slab, to promote the cooling performance of coolant duct.
Each structural slab can adopt bolt to link together among the present invention, also can adopt modes such as vacuum diffusion welding connects, vacuum fusion welding to weld together.
According to an embodiment of the present, described gas spray header is made up of 5 layers of structural slab, be respectively gas web plate, gas injection plate and first, second, third gas distribution grid, each structural slab is stacked in order, and uses welding processs such as diffusion welding, vacuum fusion welding to link together.Between gas injection plate and the 3rd gas distribution grid and between first and second gas distribution grid coolant duct is being installed.
Formed separately the independently first precursor gases passage, second precursor gases passage and the carrier gas passage after each structural slab links together in the described spray header, each passage respectively with reaction chamber chamber UNICOM.
The lower surface of described gas injection plate is relative with wafer in the reaction chamber, its upper surface is distributed with the groove that cooling passage is installed, the cross section of groove is semicircle, and groove and gas spout distribute in a parallel manner, connects with tangent semi-circular recesses between the straight-line groove that is connected.
Be distributed with the slit that constitutes first precursor gases, the second precursor gases passage on described first gas distribution grid, the first gas distribution grid intermediate section is furnished with the gas of carrier gas passage, also be distributed with coolant duct outlet circular hole on other first gas distribution grid, also be distributed with groove corresponding with the gas injection plate, that coolant duct is installed at its lower surface.And also be distributed with the groove that coolant duct is installed at the first gas distribution grid upper surface, the coolant duct groove that distributes on the upper and lower surface of first gas distribution grid at interval, be interspersed.
Described second gas distribution grid and the 3rd gas distribution grid similar, but second gas distribution grid has only lower surface to be distributed with the groove that coolant duct is installed, and the distribution form of groove is corresponding with the distribution form that the 3rd gas distribution grid upper surface is installed the coolant duct groove.
Be distributed with the slit and the coolant duct outlet circular hole that form the first precursor gases passage on the 3rd gas distribution grid, also be distributed with the second precursor gases diffusion admittance and the second precursor gases import at the 3rd gas distribution grid lower surface.
Gas web plate lower surface is distributed with first precursor gases diffusion cavity, and surface arrangement has first precursor gases, second precursor gases, carrier gas interface and temperature, chip warpage degree measuring sonde that window is installed thereon.
First precursor gases enters spray header by the gas web plate, the first precursor gases diffusion chamber internal diffusion in gas web plate lower surface and the formation of the 3rd gas distribution grid upper surface, be evenly distributed in each first precursor gases narrow slit type nozzle, enter reaction chamber by nozzle ejection again.
Second precursor gases enters spray header by the gas web plate, and then the 3rd evenly divide in each second precursor gases narrow slit type nozzle of sermon in the diffusion admittance that forms of gas distribution grid lower surface and the second gas distribution grid upper surface, enters reaction chamber by nozzle ejection again.
Carrier gas is installed window by probe on the web plate upper surface and is introduced, and the gas of carrier gas passage through each structural slab middle part enters reaction chamber again, and the main effect of this carrier gas has 2 points: promote the inner steady flow condition that forms of reaction chamber 1.; 2. keep temperature, angularity measuring sonde to measure the cleaning of passage.
Cooling fluid is linked in the coolant duct that is installed in the spray header by the coolant duct that stretches out the web plate top, through being flowed out by the coolant pipe pipeline joint after the refrigeration cycle, cooperates the coolant temperature operating device can form stable refrigeration cycle again.
Compared with prior art, the invention has the beneficial effects as follows: the coolant duct that the present invention adopts bending to form substitutes mode original, that form cooling passage by each structural slab groove and has reduced the manufacture difficulty of whole spray header, and has improved the sealing reliability of cooling passage.By adopting the mode that the multilayer coolant duct is installed, the present invention can also further improve the cooling performance of spray header.
Each structural slab of spray header processes on the milling machine more easily among the present invention, and processing technology is good.After each structural slab and the cooling duct assembling, can use the method for bolt connection or diffusion welding that structural slab is connected, because it is very low to the seal request between each structural slab, therefore also can reduce diffusion welding or bolted requirement, thereby promote the manufacturability of whole spray header.Adopt spray header of the present invention because difficulty of processing reduces the scrap rate that will reduce in the spray header course of processing, significantly reduce the processing and manufacturing cost of spray header, and promote the work reliability of spray header.
Because the present invention adopted integrated piping as cooling passage, so the spray header inside possibility that do not exist cooling fluid to reveal basically, thereby reduce the probability of malfunction of equipment, promoted plant factor, brought good economic benefit.
The present invention is further elaborated below in conjunction with drawings and Examples.
Description of drawings
Fig. 1 is to use the structure of reactor synoptic diagram of an embodiment of the present invention;
Fig. 2 is the explosive view synoptic diagram of an embodiment of the present invention;
Fig. 3 is the structural representation of an embodiment of the present invention web plate;
Fig. 4 is the structural representation of an embodiment of the present invention;
Fig. 5 is an embodiment of the present invention gas web plate part-structure synoptic diagram;
Fig. 6 is the structural representation of an embodiment of the present invention the 3rd gas distribution grid;
Fig. 7 is the structural representation of an embodiment of the present invention second gas distribution grid;
Fig. 8 is the another kind of embodiment coolant duct of the present invention subregion synoptic diagram.
Embodiment
Figure 1 shows that MOCVD reactor 100 synoptic diagram that use an embodiment of the present invention.This reactor top is gas incoming end 202,203,206, and cooling fluid imports and exports 201,207, and temperature, chip warpage degree survey meter 204 and temperature, chip warpage degree survey meter are installed window 205.Gas interface 202 is the second precursor gases supply line, and second precursor gases is gas such as the ammonia that contains group; Gas interface 206 is the first precursor gases interface, and first precursor gases is the gas that contains III family element organism such as trimethyl-gallium; Gas interface 203 connects the carrier gas supply lines, and carrier gas be the gas that does not react with precursor gases, as nitrogen, hydrogen etc.; Cooling fluid is imported and exported 201,207 and is connected cooling system, for whole spray header provides cooling, temperature control.The below of reactor 100 is reaction end gas outlet 107, is used for discharging waste gas and the control reaction chamber internal pressure of reaction chamber 103 inside.Reaction chamber is surrounded by reaction chamber wall 106, chip bearing apparatus 104, spray header 200.Wherein spray header 200 is one embodiment of the present of invention, is mounted with the wafer 102 that deposits on spray header 200 belows, the chip bearing apparatus 104.The chip bearing apparatus below is equipped with heating unit 105 for wafer 102 heating, reacts under the needed temperature so that wafer 102 is in, and forms uniform heat-fields on wafer 102 surfaces.
Figure 2 shows that the exploded perspective view of 200 1 kinds of embodiment of spray header of the present invention.As shown in Figure 2, the gas spray header adds four road cooling passages by 5 floor structural slab and forms, be respectively gas injection plate 210, the first precursor gases grid distributor 212, second gas distribution grid, 214, the three gas distribution grids 215, gas web plate 216, wherein coolant duct 211,218 is distributed between gas injection plate 210 and first gas distribution grid 212, and coolant duct 213,217 is distributed between first gas distribution grid and second gas distribution grid.Each structural slab and coolant duct can use welding processs such as vacuum diffusion welding connects, vacuum fusion welding to weld together under heating, pressurized conditions, formation spray header integral body, each structural part also can use dismountable mode to link together in addition, connects as bolt.
As previously mentioned, be distributed with gas inlet 202,203,206 on gas web plate 216 upper surfaces, cooling liquid inlet 211a, 213a, 217a, 218a, cooling liquid outlet 211b, 213b, 217b, 218b, temperature, chip warpage degree survey meter 204 and temperature, chip warpage degree survey meter are installed window 205.For precursor gases is evenly distributed in each nozzle as much as possible, every kind of precursor gases entrance all uses two or more interfaces to be linked in the reaction chamber.Also be distributed with in conjunction with Fig. 2 and the visible gas web plate of Fig. 3 lower surface and form distribute the in advance semi-circular recesses 308a of chamber 308 of second precursor gases.Also be distributed with tuyere 203b on the sidewall of the slit 305e of probe installation window 205 inside on the gas web plate 216, this tuyere 203b is by the circular hole 305a on the length that is distributed in slit 305e and 203 UNICOMs.Carrier gas is evenly distributed among the tuyere 203b by 203a, thereby the carrier gas that enters in the slit 305e is evenly distributed along its length in slit 305e inside.Can also adjust the jet direction of tuyere 203b in addition as required, such as with this nozzle direction furnishing obliquely, make carrier gas spray to probe orientation, specifically as shown in Figure 4.
Be distributed with cooling liquid inlet and cooling liquid outlet on the described gas web plate 216, preferred cooling liquid inlet, cooling liquid outlet distribute separately in pairs, and import, export into rotational symmetry and distribute.
Be distributed with gas interface 202,203,206 on the described gas web plate 216, preferably the interface of similar gas distributes with symmetrical manner.
The 3rd gas distribution grid 215 is positioned at gas web plate 216 belows, and its upper surface and gas web plate lower surface are fitted.In conjunction with being distributed with the second precursor gases passage 303d, the first precursor gases intake vent 304, coolant duct installation through hole 306b on Fig. 2, Fig. 4 and visible the 3rd gas distribution grid of Fig. 6.The 3rd gas distribution grid below also is distributed with the first precursor gases diffusion admittance, and this diffusion admittance comprises import 206a, circular channel 206b and diffusion admittance 307d, and the concrete distribution shape of diffusion admittance as shown in Figure 6.Also be distributed with viewing window passage 305d on other the 3rd gas distribution grid, this passage also is carrier gas passage simultaneously.
Be distributed with gas diffusion paths 307d on described the 3rd gas distribution grid 215, width w and every corresponding jet area of diffusion admittance of preferred gas diffusion paths 307d are proportional.
Be distributed with the second precursor gases passage 303d, the first precursor gases diffusion admittance 307d on described the 3rd gas distribution grid, the preferred second precursor gases passage 303d and the first precursor gases diffusion admittance 307d at interval, be alternately distributed.
Second gas distribution grid 214 is positioned at the 3rd gas distribution grid 215 belows, and its upper surface and the 3rd gas distribution grid fit.In conjunction with being distributed with the first precursor gases passage 303c, the second precursor gases passage 307c, viewing window passage (being the gas of carrier gas passage) 305c, coolant duct installation through hole 306c on visible second gas distribution grid of Fig. 2, Fig. 7.The second gas distribution grid lower surface also is distributed with the groove that coolant duct is installed, and groove cross section is semicircle, and the distribution shape of groove 302b as shown in Figure 8.
Be distributed with groove 302b on second gas distribution grid, the shape of cross section of preferred groove 302b is semicircle or half elliptic.
First gas distribution grid 212 is positioned at second gas distribution grid, 214 belows, and its upper surface and second gas distribution grid fit.In conjunction with visible first gas distribution grid of Fig. 2, Fig. 4 and the second gas distribution grid structural similitude, difference is that the upper and lower surface of first gas distribution grid all is distributed with the groove that coolant duct is installed, the groove 302a of its upper surface installation coolant duct is corresponding with the second gas distribution grid lower surface grooves distributed 302b, and lower surface grooves distributed 301b is corresponding with gas injection plate upper surface grooves distributed 301a.
Be distributed with gas passage 303a, 307a on the gas injection plate 210, preferred gas passage shape can be long strip shape slit, small sircle hole or other geometrical shapies.
Be distributed with gas passage 303a, 307a on the gas injection plate 210, preferred gas passage can become different angles with wafer surface, as 60 °.
Coolant duct 211,213,217,218 is installed between the corresponding structural slab by stacking order, and preferred coolant duct cross section is circular or oval.
Preferred coolant duct adopts the single pipe bending or follows the pipeline welding to make more.
First precursor gases enters spray header by interface 206, arrive the first precursor gases diffusion admittance 307a through 206a, 206b then, enter the nozzle ejection of being formed by gas passage 307b, 307c, 307d through first precursor gases after the distribution of gas diffusion paths and enter in the reaction chamber.Second precursor gases enters spray header by interface 202, enters the nozzle ejection of being made up of gas passage 303a, 303b, 303c, 303d after evenly distributing and enter in the reaction chamber in the pre-distribution cavity 308 of second precursor gases.Cooling fluid is inserted in the coolant duct by coolant connection 211a, 213a, 217a, 218a, leaves spray header by corresponding cooling liquid outlet again after the circulation in spray header.
Figure 8 shows that the another kind of embodiment pipeline of the present invention subregion synoptic diagram, coolant duct adopts the distribution form of annular subregion; The spray header cooled region is divided for interior A, middle B, three zones of outer C, and this partitioned mode makes spray header and the heating unit that is all the annular subregion can better fit, for providing favourable condition at the inner homogeneous temperature field that forms of reaction chamber.
According to the requirement of patent law regulation, the present invention with the detailed description of embodiment the concrete structure invented and the feature for the treatment of process thereof.Yet, should be appreciated that described example just for better statement structure of the present invention and feature, the present invention is not limited to the shown and characteristic described herein.Therefore, the present invention states herein, and enforcement of the present invention various forms of impartial changed or distortion all is included in the protection domain of appending claims.
Claims (8)
1. tube-cooled formula distribution device in gas-fluid that is used for the metal organic chemical vapor deposition reactor, comprise the gas injection plate (210) that is positioned at reaction chamber (103) top, this gas injection plate (210) top is provided with gas web plate (216), is provided with at least three stacked gas distribution grids (212,214,215) between described gas injection plate (210) and gas web plate (216); It is characterized in that, between described gas injection plate (210) and undermost gas distribution grid (212), be provided with coolant duct (211,213,217,218) between the adjacent two layers gas distribution grid; Described gas web plate (216) is provided with some gas interfaces (202,203,206), survey meter install window (205) and with described coolant duct (211,213,217,218) cooling fluid that is communicated with imports and exports (201,207), and described gas injection plate (210), gas distribution grid (212,214,215), after being superimposed, gas web plate (216) forms some separate gas passage (303c, 307c, 305c), this gas passage comprises the first precursor gases passage (307), the second precursor gases passage (303) and carrier gas passage (305); The upper and lower side of the downside of the upper side of described gas injection plate (210), gas web plate (216) and each gas distribution grid (212,214,215) is equipped be used to two groove (308a that hold coolant duct (211,213,217,218), 301b, 302b), separate by slit (305e) between two grooves (308a), horizontally disposed in described groove (308a, 301b, 302b) internal cooling liquid pipeline bending; Described survey meter is installed in the window (205) and is provided with the slit (305e) that is communicated with gas interface; Be equipped with coolant duct on described gas web plate (216) and each gas distribution grid (212,214,215) through hole is installed.
2. the tube-cooled formula distribution device in gas-fluid for the metal organic chemical vapor deposition reactor according to claim 1 is characterized in that, described gas distribution grid (212,214,215) has three.
3. the tube-cooled formula distribution device in gas-fluid for the metal organic chemical vapor deposition reactor according to claim 1 and 2, it is characterized in that, the cross section of described groove (308a, 301b, 302b) is semicircle, semicircular string and described slit (305e) conllinear.
4. the tube-cooled formula distribution device in gas-fluid for the metal organic chemical vapor deposition reactor according to claim 1 and 2 is characterized in that, the quantity of described coolant duct (211,213,217,218) is the 1-16 root.
5. the tube-cooled formula distribution device in gas-fluid for the metal organic chemical vapor deposition reactor according to claim 4, it is characterized in that, when coolant duct was many, many coolant ducts (211,213,217,218) were separate cooling channel.
6. the tube-cooled formula distribution device in gas-fluid that is used for the metal organic chemical vapor deposition reactor according to claim 1 or 5, it is characterized in that, being connected between described coolant duct and gas injection plate (210), gas web plate (216), the gas distribution grid (212,214,215) adopt vacuum diffusion welding to connect in succession or vacuum fusion welding connects or is located by connecting with described groove.
7. the tube-cooled formula distribution device in gas-fluid for the metal organic chemical vapor deposition reactor according to claim 1 and 2 is characterized in that, the cross section of described groove (308a, 301b, 302b) is half elliptic or Polygons.
8. the tube-cooled formula distribution device in gas-fluid for the metal organic chemical vapor deposition reactor according to claim 1 and 2 is characterized in that, described survey meter is installed window (205) chip warpage degree measuring sonde is installed.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310233117.XA CN103334092B (en) | 2013-06-13 | 2013-06-13 | Pipeline cooled gas distribution device used for metal organic chemical vapour deposition reactor |
| PCT/CN2014/072685 WO2014198134A1 (en) | 2013-06-13 | 2014-02-28 | Pipeline-cooling gas distribution device for metal organic chemical vapour deposition reactor |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310233117.XA CN103334092B (en) | 2013-06-13 | 2013-06-13 | Pipeline cooled gas distribution device used for metal organic chemical vapour deposition reactor |
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| CN103334092B CN103334092B (en) | 2015-04-22 |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103590019A (en) * | 2013-10-31 | 2014-02-19 | 沈阳拓荆科技有限公司 | Multi-gas independent channel spraying method combining stereo partitioning and plane partitioning |
| WO2014198134A1 (en) * | 2013-06-13 | 2014-12-18 | 中国电子科技集团公司第四十八研究所 | Pipeline-cooling gas distribution device for metal organic chemical vapour deposition reactor |
| CN104264128A (en) * | 2014-09-11 | 2015-01-07 | 中国电子科技集团公司第四十八研究所 | Grid-type gas distribution device for MOCVD (metal-organic chemical vapor deposition) reactor |
| CN104789943A (en) * | 2015-04-01 | 2015-07-22 | 沈阳拓荆科技有限公司 | Temperature-controllable double-gas channel spraying plate with uniform gas spraying function |
| WO2015165271A1 (en) * | 2014-04-28 | 2015-11-05 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Cap device and process apparatus |
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| US20170304849A1 (en) * | 2016-04-26 | 2017-10-26 | Applied Materials, Inc. | Apparatus for controlling temperature uniformity of a showerhead |
| CN107576147A (en) * | 2016-07-05 | 2018-01-12 | 中石化洛阳工程有限公司 | A kind of liquefied natural gas after-condenser liquid distributor |
| CN115341197A (en) * | 2022-09-15 | 2022-11-15 | 东部超导科技（苏州）有限公司 | Spray cooling integrated plate and spray system for metal organic chemical vapor deposition |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009058376A2 (en) * | 2007-10-31 | 2009-05-07 | Lam Research Corporation | Temperature control module using gas pressure to control thermal conductance between liquid coolant and component body |
| CN201933153U (en) * | 2010-12-31 | 2011-08-17 | 中微半导体设备(上海)有限公司 | Gas distribution device and reactor for metal organic chemical vapor deposition reactor |
| CN102534563A (en) * | 2011-06-16 | 2012-07-04 | 中国电子科技集团公司第四十八研究所 | Inclined entering gas spray header applied to metal organic chemical vapor deposition reactor |
| CN203360572U (en) * | 2013-06-13 | 2013-12-25 | 中国电子科技集团公司第四十八研究所 | Pipeline cooling type gas distribution device used for metal organic chemical vapor deposition reactor |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004319850A (en) * | 2003-04-17 | 2004-11-11 | Furukawa Co Ltd | Gas cooling part of vapor growth device |
| US20070248515A1 (en) * | 2003-12-01 | 2007-10-25 | Tompa Gary S | System and Method for Forming Multi-Component Films |
| JP4719184B2 (en) * | 2007-06-01 | 2011-07-06 | 株式会社サイアン | Atmospheric pressure plasma generator and work processing apparatus using the same |
| JP2013038196A (en) * | 2011-08-08 | 2013-02-21 | Sharp Corp | Vapor phase growth apparatus |
| CN103074604A (en) * | 2012-04-23 | 2013-05-01 | 光达光电设备科技（嘉兴）有限公司 | Spraying nozzle for chemical vapor deposition process and method for improving process uniformity |
| CN202688435U (en) * | 2012-05-11 | 2013-01-23 | 中微半导体设备(上海)有限公司 | Gas distributing device for metal organic chemical gas phase deposition reaction device and reaction device |
| CN103334092B (en) * | 2013-06-13 | 2015-04-22 | 中国电子科技集团公司第四十八研究所 | Pipeline cooled gas distribution device used for metal organic chemical vapour deposition reactor |
-
2013
- 2013-06-13 CN CN201310233117.XA patent/CN103334092B/en active Active
-
2014
- 2014-02-28 WO PCT/CN2014/072685 patent/WO2014198134A1/en active Application Filing
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2009058376A2 (en) * | 2007-10-31 | 2009-05-07 | Lam Research Corporation | Temperature control module using gas pressure to control thermal conductance between liquid coolant and component body |
| CN201933153U (en) * | 2010-12-31 | 2011-08-17 | 中微半导体设备(上海)有限公司 | Gas distribution device and reactor for metal organic chemical vapor deposition reactor |
| CN102534563A (en) * | 2011-06-16 | 2012-07-04 | 中国电子科技集团公司第四十八研究所 | Inclined entering gas spray header applied to metal organic chemical vapor deposition reactor |
| CN203360572U (en) * | 2013-06-13 | 2013-12-25 | 中国电子科技集团公司第四十八研究所 | Pipeline cooling type gas distribution device used for metal organic chemical vapor deposition reactor |
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2014198134A1 (en) * | 2013-06-13 | 2014-12-18 | 中国电子科技集团公司第四十八研究所 | Pipeline-cooling gas distribution device for metal organic chemical vapour deposition reactor |
| CN103590019A (en) * | 2013-10-31 | 2014-02-19 | 沈阳拓荆科技有限公司 | Multi-gas independent channel spraying method combining stereo partitioning and plane partitioning |
| WO2015165271A1 (en) * | 2014-04-28 | 2015-11-05 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Cap device and process apparatus |
| CN104264128A (en) * | 2014-09-11 | 2015-01-07 | 中国电子科技集团公司第四十八研究所 | Grid-type gas distribution device for MOCVD (metal-organic chemical vapor deposition) reactor |
| CN104264128B (en) * | 2014-09-11 | 2017-06-16 | 中国电子科技集团公司第四十八研究所 | A kind of grating type distribution device in gas-fluid for MOCVD reactors |
| TWI563115B (en) * | 2014-12-26 | 2016-12-21 | Advanced Micro Fab Equip Inc | |
| CN104789943A (en) * | 2015-04-01 | 2015-07-22 | 沈阳拓荆科技有限公司 | Temperature-controllable double-gas channel spraying plate with uniform gas spraying function |
| CN105483649A (en) * | 2015-12-11 | 2016-04-13 | 中国电子科技集团公司第四十八研究所 | Micropore sprinkling head and manufacturing method thereof |
| US20170304849A1 (en) * | 2016-04-26 | 2017-10-26 | Applied Materials, Inc. | Apparatus for controlling temperature uniformity of a showerhead |
| US10780447B2 (en) * | 2016-04-26 | 2020-09-22 | Applied Materials, Inc. | Apparatus for controlling temperature uniformity of a showerhead |
| CN107576147A (en) * | 2016-07-05 | 2018-01-12 | 中石化洛阳工程有限公司 | A kind of liquefied natural gas after-condenser liquid distributor |
| CN115341197A (en) * | 2022-09-15 | 2022-11-15 | 东部超导科技（苏州）有限公司 | Spray cooling integrated plate and spray system for metal organic chemical vapor deposition |
| CN115341197B (en) * | 2022-09-15 | 2023-08-11 | 东部超导科技（苏州）有限公司 | Spray cooling integrated plate and spray system for metal organic chemical vapor deposition |
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| CN103334092B (en) | 2015-04-22 |
| WO2014198134A1 (en) | 2014-12-18 |
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