WO2021225934A1

WO2021225934A1 - Gas distribution assembly

Info

Publication number: WO2021225934A1
Application number: PCT/US2021/030415
Authority: WO
Inventors: Sanjay D. Yadav; Surendra Kanimihally SETTY; Young Dong Lee; Tae Kyung Won; Chien-Teh Kao; Guangwei Sun; Soo Young Choi
Original assignee: Applied Materials, Inc.
Priority date: 2020-05-06
Filing date: 2021-05-03
Publication date: 2021-11-11
Also published as: KR20230006543A; CN115516132A

Abstract

The present disclosure provides a gas distribution assembly including a frame with a first portion and a second portion that are parallel and opposite one another. Manifolds are disposed parallel to and between the first portion and the second portion. Each manifold has a first face and a second face. The first face has a gas inlet, and the second face has outlets. The gas distribution assembly includes nozzles. Each nozzle is coupled to one of the outlets of the second face and each nozzle includes a nozzle pinhole extending from an outlet of each nozzle. The gas distribution assembly includes tubes with each tube having a first end coupled to a first manifold of the manifolds and a second end coupled to a second manifold of the manifolds. Each of the tubes are disposed parallel to one another.

Description

GAS DISTRIBUTION ASSEMBLY

BACKGROUND

Field

[0001] Embodiments of the present disclosure generally relate to a gas distribution assembly for distributing gas in a process chamber.

Description of the Related Art

[0002] Chemical vapor deposition (CVD) is used to deposit thin films on substrates used in certain applications, such as displays. CVD involves introducing a precursor gas or gas mixture into a chamber that contains a substrate. The precursor gas or gas mixture is typically directed downwardly through a distribution assembly, such as a distribution plate from a top portion of a chamber. In plasma enhanced chemical vapor deposition (PECVD), a precursor gas or gas mixture in the chamber is energized into a plasma by applying radio frequency (RF) power to the chamber or distribution plate from one or more RF power sources. The excited gas or gas mixture reacts to form a layer of material on a surface of the substrate that is positioned on a substrate support. Certain substrates, such as those used in flat panel displays that are processed by PECVD, are large. Consequently, gas distribution plates used to provide uniform process gas flow over flat panels are also large. As the size of substrates continues to grow, such as in the liquid crystal display (LCD) and light emitting diode (LED) industry, film thickness and film property uniformity control for large area plasma-enhanced chemical deposition present additional considerations.

[0003] Therefore, there is a need for a gas distribution assembly for film thickness and uniformity control over large substrates.

SUMMARY

[0004] In some embodiments, a gas distribution assembly is provided including a frame with a first portion and a second portion that is parallel and opposite the first portion. A plurality of manifolds is disposed parallel to and between the first portion and the second portion and each manifold is disposed parallel to one another. Each manifold has a first face and a second face. The first face has a gas inlet, and the second face has a plurality of outlets. The gas distribution assembly includes a plurality of nozzles. Each nozzle is removably coupled to one of the plurality of outlets of the second face and each nozzle includes a nozzle pinhole extending from an outlet of each nozzle. The gas distribution assembly includes a plurality of tubes. Each tube includes a first end coupled to a first manifold of the plurality of manifolds and a second end coupled to a second manifold of the plurality of manifolds.

[0005] In some embodiments, a gas distribution assembly is provided, including a plurality of manifolds disposed adjacent to one another. Each manifold includes a first face and a second face, the first face having a gas inlet, and the second face having a plurality of outlets. The gas distribution assembly includes a plurality of nozzles, each nozzle removably coupled to one or more of the plurality of outlets of the second face. Each nozzle has a nozzle pinhole extending from an outlet of each nozzle. The gas distribution assembly includes a plurality of tubes. Each tube includes a first end coupled to a first manifold of the plurality of manifolds and a second end coupled to a second manifold of the plurality of manifolds. Each of the tubes include a plurality of perforations.

[0006] In some embodiments, a process chamber is provided including a gas distribution assembly. The gas distribution assembly includes a plurality of manifolds and a plurality of tubes. Each of the tubes includes a plurality of perforations. The plurality of tubes extend between adjacent manifolds and are in fluid communication with at least one manifold of the plurality of manifolds. The plurality of manifolds and the plurality of tubes form a planar arrangement including a first face and a second face. The gas distribution assembly includes a plurality of nozzles coupled to the second face. Each nozzle has a nozzle pinhole at an outlet of each nozzle. A gas inlet is disposed on one or more of the plurality of manifolds. The gas inlet is disposed on the first face of the planar arrangement. A substrate support disposed in the process chamber opposing the second face of the planar arrangement. BRIEF DESCRIPTION OF THE DRAWINGS

[0007] So that the manner in which the above recited features of the present disclosure can be understood in detail, a more particular description of the disclosure, briefly summarized above, may be had by reference to embodiments, some of which are illustrated in the appended drawings. It is to be noted, however, that the appended drawings illustrate only example embodiments of this disclosure and are therefore not to be considered limiting of its scope, for the disclosure may admit to other equally effective embodiments.

[0008] FIG. 1 depicts a cross-sectional schematic view of a process chamber having an example gas distribution assembly in accordance with one embodiment of the present disclosure.

[0009] FIG. 2A depicts a bottom view of a gas distribution assembly in accordance with one embodiment of the present disclosure.

[0010] FIG. 2B depicts a close range bottom view of a gas distribution assembly in accordance with one embodiment of the present disclosure.

[0011] FIG. 2C depicts a top cross-sectional view of a planar arrangement of manifolds and tubes of a gas distribution assembly in accordance with one embodiment of the present disclosure.

[0012] FIG. 3A depicts a side cross-sectional view of a manifold and tube of gas distribution assembly in accordance with one embodiment of the present disclosure.

[0013] FIG. 3B depicts an end view of a tube of a gas distribution assembly in accordance with one embodiment of the present disclosure.

[0014] FIG. 4 depicts a cross-section view of a nozzle of a gas distribution assembly in accordance with one embodiment of the present disclosure.

[0015] FIG. 5 depicts a schematic bottom view of a gas flow plate in accordance with one embodiment of the present disclosure. [0016] To facilitate understanding, identical reference numerals have been used, where possible, to designate identical elements that are common to the figures. It is contemplated that elements and features of one embodiment may be beneficially incorporated in other embodiments without further recitation.

DETAILED DESCRIPTION

[0017] Embodiments of the present disclosure generally relate to a gas distribution assembly for distributing gas in a process chamber. The present disclosure is illustratively described herein in reference to a plasma enhanced chemical vapor deposition system configured to process large area substrates, such as a plasma enhanced chemical vapor deposition (PECVD) system. However, it should be understood that the present disclosure is useful for other system configurations and/or processes such as etch systems, other chemical vapor deposition systems, and any other system in which gas distributed within a process chamber, including those systems configured to process round, rectangular, or other polygonal-shaped substrates.

[0018] FIG. 1 depicts a cross-sectional schematic view of a process system 100 having a gas distribution assembly 128 in accordance with one embodiment of the present disclosure. The system 100 includes a process chamber 120 in fluid communication with or otherwise coupled to a gas source 122. The process chamber 120 has sidewalls 114, a bottom 112, and a top 108 that define a process volume 110 inside the process chamber 120. A power source 104 is coupled to the gas distribution assembly 128 and is used to excite gases present in the process volume 110.

[0019] The process volume 110 is accessed through a port (not shown) in the sidewalls 114 that facilitates movement of a substrate (not shown) into and out of the process chamber 120. The substrate is placed on a substrate support 102 before processing. The substrate support 102 is temperature controlled using a heater coupled to a power supply 106. The substrate support 102 is disposed in the process volume 110 opposing the gas distribution assembly 128. In operation, one or more gases from one or more gas sources (e.g., 122) enter the gas distribution assembly 128 through a gas flow plate 130. The gas flow plate 130 provides gas to a plurality of gas inlets on a first face 128a of a plurality of manifolds (e.g., depicted as 206 in FIG. 2A). The first face 128a is coupled to the gas flow plate 130. Gas within the manifolds 206 exit the manifolds 206 through a plurality of outlets on a second face 128b of the manifolds and into tubes (e.g., depicted as 210 in FIG. 2A) coupled to the each manifold on each longitudinal side of the each manifold. Each of the plurality of gas inlets of the first face 128a receives gas from a gas flow plate 130 of the gas distribution assembly 128. The substrate support 102 is disposed opposing the second face 128b of the manifolds 206. In operation, process temperatures are about 100 °C or greater, such as about 100 °C to about 800 °C, such as about 200 °C to about 600 °C.

[0020] FIG. 2A depicts a bottom view (e.g., second face 128b shown in FIG. 1 ) of the gas distribution assembly 128. In some embodiments, which can be combined with other embodiments described herein, the shape of the gas distribution assembly 128 is substantially the same as the shape of the substrate that is to be treated. For illustrative purposes, the shape of the gas distribution assembly 128 is depicted as rectangular, but can take other shapes such as a circular shape. The gas distribution assembly 128 includes a frame 200 with a first portion 202 and a second portion 204. In some embodiments, which can be combined with other embodiments of the present disclosure, the second portion 204 is parallel and opposite the first portion 202. The frame 200 includes support beams 210 extending from the first portion 202 to the second portion 204. The gas distribution assembly 128 includes a plurality of manifolds 206 disposed parallel to and between the first portion 202 the second portion 204. Each manifold 206 is disposed parallel to one another (e.g., 206Y(x-i) and 206Y_X, such as 206A(x-i) and 206A_X, such as 206Ai and 2O6A2) or and/or aligned end-to-end (e.g., 206(Y-1 ) and 206Y, such as 206(Y-1 )_X and 206Y_X, such as 206Ai and 2O6B1). Each of the manifolds 206 are coupled to the support beams 210 of the frame 200. In some embodiments, which can be combined with other embodiments described herein, the interfaces between manifold ends (e.g., 2O6A1 and 2O6B1) are coupled to support beams 210 of the frame 200.

[0021] The gas distribution assembly 128 includes a plurality of tubes 208. The tubes 208 extend between adjacent manifolds (e.g., 206Y(x-i) and 206Y_X) and are in fluid communication with at least one manifold 206. In particular, each tube 208 has a first end coupled to a first manifold (e.g., 206Ai) and a second end coupled to a second manifold (e.g., 2O6A2) of the plurality of manifolds 206. Each of the tubes 208 are disposed parallel to one another and/or perpendicular to at least one manifold 206. The plurality of manifolds 206 and the plurality of tubes 208 are in fluid communication with one another and are in a planar arrangement including a first face (e.g., 128a as shown in FIG. 1 ) and a second face (e.g., 128b as shown in FIG. 1). The planar arrangement includes a width of about 70 inches to about 130 inches wide, such as about 80 inches to about 100 inches, such as about 90 inches to about 95 inches, and a length of about 50 inches to about 110 inches, such as about 60 inches to about 80 inches, such as about 70 inches to about 75 inches. In some embodiments, which can be combined with other embodiments described herein, each of the plurality of manifolds 206 are removably coupled to the support beams 210.

[0022] FIG. 2B depicts a close range bottom view (e.g., second face 128b) of the gas distribution assembly 128. The gas distribution assembly 128 includes a first set of manifolds 2O6A1, 2O6B1, ... 2O6Y1, arranged end-to-end forming a first set of manifold end interfaces 216, each manifold end of the first set of manifold interfaces 216 is removably coupled to a support beam 210 of the frame 200. The gas distribution assembly 128 further includes a second set of manifolds 2O6A2, 2O6B2, ... 2O6Y2, adjacent and spaced apart from the first set of manifolds. Each of the second set of manifolds 206 are arranged end-to-end forming a second set of manifold end interfaces 216. Each manifold end of the second set of manifold interfaces is removably coupled to a support beam 210 of the frame 200. In some embodiments, which can be combined with other embodiments described herein, the second face 128b is secured to the first face 128a using fasteners. Alternatively, each face 128a, 128b for the manifold 206 is not removable from one another. The manifold 206 is fixed to a gas flow plate 130 using fasteners 224.

[0023] Each manifold 206 includes a plurality of nozzles 220 coupled to the second face 128b. Each nozzle 220 has a nozzle pinhole 214 formed therein and extending from an outlet of each nozzle 220. Each manifold 206 includes at least 1 nozzle, or about 2 to about 40 nozzles, such as about 4 to about 32 nozzles, such as about 6 to about 30 nozzles, such as about 8 to about 24 nozzles, such as about 10 to about 20 nozzles, such as about 14 to about 18 nozzles, such as about 16 nozzles. The nozzles 220 are aligned co-linearly at a position where the tubes 208 are coupled to the manifold 206. In an alternative embodiment, the nozzles 220 may be positioned out of plane or in a non-co-linear alignment with the tubes 208. In some embodiments, which can be combined with other embodiments described herein, each nozzle 220 is in fluid communication with a manifold 206 and a tube 208.

[0024] Each manifold 206 is coupled to one or more tubes 208, such as about

2 to about 40 tubes, such as about 4 to about 32 tubes, such as about 6 to about 30 tubes, such as about 8 to about 24 tubes, such as about 10 to about 20 tubes, such as about 14 to about 18 tubes, such as about 16 tubes. Each of the tubes 208 have one or more perforations 212 on the second face 128b of the gas distribution assembly 128. In some embodiments, which can be combined with other embodiments of the present disclosure, each tube has about 1 to about 25 perforations, spaced along each tube 208, such as about 2 to about 20 perforations per tube, such as about 4 to about 16 perforations per tube, such as about 6 to about 12 perforations per tube, such as about 8 to about 10 perforations per tube.

[0025] The length of the tubes 208 is adjusted based on the process and substrate to be processed. In some embodiments, which can be combined with other embodiments described herein, each tube includes a length of about 10 cm to about 80 cm, such as about 30 cm to about 60 cm, such as about 40 cm to about 50 cm. The distance between adjacent tubes 208 is about 10 mm to about 100 mm, such as about 20 mm to about 80 mm, such as about 30 mm to about 60 mm, such as about 40 mm to about 50 mm. The distance between adjacent tubes 208 is uniform throughout the gas distribution assembly 128 or the distance between adjacent tubes 208 is different throughout the gas distribution assembly 128. The distance between perforations 212 in each tube 208 is about 0.5 inches to about 5 inches, such as about 1 inch to about 3 inches, such as about 1.5 inches to about 2 inches. One or more of the distance between perforations 212, the distance between adjacent tubes 208, and the length of each tube 208 disposed between adjacent manifolds 206 are adjusted to control uniformity of gas distribution, film thickness of film deposited on the substrate, film thickness uniformity, and/or other gas distribution properties. Example of films that are deposited in CVD processes described herein include, but are not limited to, silicon nitride, silicon oxide, silicon oxynitride, amorphous silicon, micro-crystalline silicon, amorphous carbon, phosphine doped silicon and combinations thereof. The film thickness is about 100 A to about 10,000 A, such as about 300 A to about 600 A, such as about 300 A to about 340 A, or about 320 A to about 360 A, or about 340 A to about 380 A, or about 360 A to about 400 A. The distribution assembly 128 is configured to deposit film with a non-uniformity percentage of less than 26%, such as less than 16%, such as less than 12%, such as less than 11%, such as about 5% to about 10%, such as about 6% to about 9.4%, alternatively less than about 5%, such as about 1% to about 5%, such as about 1% to about 4%. In some embodiments, which can be combined with other embodiments disclosed herein, the thickness of the deposited film is measured at a total of 195 points, with a matrix pattern of 13 points by 15 points using thickness metrology. The non-uniformity percentage from the target thickness is a percentage below or above the ratio of the difference in maximum and minimum measured thickness and the sum of the maximum and minimum distance (e.g., NU = +/- (max-min)/(max+min))

[0026] FIG. 2C depicts a cross-sectional top view (e.g., first face 128a) of the manifolds 206 and tubes 208 of the gas distribution assembly 128. Each manifold 206 includes one or more channels 230. The channels 230 are in fluid communication with an inlet 234 on the first face 128a of each manifold 206. The inlet 234 is in fluid communication with a gas source and functions to deliver gas to the channels 230 within each manifold 206. The channels 230 are in fluid communication with each of the tubes 208 coupled to each of the manifolds 206 at a tube connection point 232. The channels 230 are in fluid connection with channels 230 of adjoining manifolds (e.g., 206A and 206B) at manifold end interfaces 216. [0027] FIG. 3A depicts a side cross-sectional view of one of the manifolds 206 and tubes 208 of the gas distribution assembly 128. Gas is introduced to the channels 230 through the inlets 234 on a first face 308 of each manifold 206 (e.g., an interface between the manifolds 206 and gas flow plate 130) and flows through the channels 230 of the manifolds 206. Gas exits each manifold 206 through the nozzle pinholes 214 of the nozzles 220 disposed on a second face 309 of each manifold 206 and/or through tubes 208. The gas is distributed to the process volume 110 through the nozzle pinholes 214 and/or through the perforations 212 in each of the tubes 208. Each tube 208 is coupled to a manifold 206 on each end of the tube 208 using a cover plate 307, such as an aluminum cover plate. The cover plate 307 is mounted on the manifold 206 using a set of screws and the cover plate 307 holds a seal 322, such as an o-ring or other elastomeric member in place. Each nozzle 220 includes a seal 320, such as an o-ring or other elastomeric member to prevent leakage around the nozzle 220.

[0028] FIG. 3B depicts an end view of the tube 208 of the gas distribution assembly 128. The tube 208 includes an inner circumference 312 with a diameter of about 0.1 inches to about 0.4 inches, such as about 0.2 inches to about 0.3 inches, such as about 0.24 inches and an outer circumference 310 with a diameter of about 0.2 inches to about 0.55 inches, such as about 0.3 to about 0.45, such as about 0.375 inches. The perforation 212 of the tube 208 has a diameter 314 of about 0.005 inches to about 0.02 inches, such as about 0.008 inches to about 0.014 inches, such as about 0.011 inches.

[0029] FIG. 4 depicts a cross-section view of the nozzle 220 of the gas distribution assembly 128. Each nozzle 220 has a total height 412 of about 0.3 inches to about 0.4 inches. Each nozzle 220 has an orifice 426 and a pinhole 214. Each pinhole 214 includes a length (L) 402, a diameter (D) 404, and a restriction constant defined by a ratio of L and D⁴ through the pinhole 214. The restriction constant (L/D⁴) is greater than 10^-3, such as greater than 1.6 x 10^-3, such as about 2.0 x 10³ to about 5.0 x 10^-3, such as about 3.0 x 10³ to about 4.5 x 10-³. The length of the pinhole 214 is about 0.05 inches to about 0.12 inches, such as about 0.06 inches to about 0.07 inches, or about 0.07 inches to about 0.095 inches, such as about 0.08 inches to about 0.085 inches. The diameter of the pinhole is about 0.008 inches to about 0.020 inches, such as about 0.009 inches to about 0.012 inches or about 0.015 inches to about 0.017 inches. The outermost portion 406 of the pinhole 214 is cone shaped. The innermost portion 424 of the pinhole 214 is cone shaped. The innermost portion 408 of the nozzle 220 is cone shaped. The nozzle 220 is fabricated from a metal, a metal oxide, a metal nitride, aluminum, aluminum oxide, silicon carbide, quartz, or combinations and mixtures thereof. The nozzle 220 has an outlet portion 420. The outlet portion 420 has a round perimeter, or the outlet portion 420 has a polygon perimeter, such as a hexagonal perimeter. In some embodiments, which can be combined with other embodiments disclosed herein, the nozzle 220 has an inlet portion 422. The inlet portion 422 is at least partially threaded and is received by a threaded portion of the manifold 206. The inlet portion 422 of the nozzle 220 is coupled to the threaded portion of the manifold 206 by screwing the inlet portion 422 of the nozzle into the threaded portion of the manifold 206. In some embodiments, which can be combined with other embodiments described herein, the nozzles 220 are removed using a tool such as a wrench, a screwdriver, or other suitable tool for removing and securing nozzles. Each nozzle 220 is removable from the manifold 206 and is replaceable for preventive maintenance and/or to replace the nozzle 220 with a different nozzle design, such as a nozzle with a different pinhole design, such as a pinhole design with a different restriction ratio. Although the figures depict the orifice 426 to be longer than the length of the pinhole 214, in some embodiments, which can be combined with other embodiments used herein, the length of the orifice 426 is the same as the length of the pinhole 214 or the length of the orifice 426 is shorter than the length of the pinhole 214. The orifice 426 of the nozzle 206 has an inner diameter 410 larger than the inner diameter 404 of the pinhole 214. The inner diameter 410 is about 0.02 inches to about 0.04 inches, such as about 0.03 inches. The length of the orifice 426 is about 0.1 inches to about 0.3 inches, such as about 0.20 inches to about 0.25 inches. [0030] Without being bound by theory, it is believed that increasing the restriction constant of each pinhole 214, by varying one or more of the length (L) 402, and the diameter (D) 404 relative to one another, increases gas flow restriction across the entire gas distribution assembly 128, thus creating a more uniform gas distribution profile in the process volume 110. By increasing the gas flow restriction, the gas distribution uniformity is less influenced by flow region control and orifice design. As used herein the term “flow region control” refers to the gas distribution to the inlet of the gas distribution assembly 128. Flow region control is described further in reference to center, corner and edge regions of the gas distribution assembly 128 as described in reference to FIG. 5 below.

[0031] FIG. 5 depicts a schematic bottom view of the gas flow plate 130 in accordance with one embodiment of the present disclosure. The gas flow plate 130 includes a plurality of gas injectors 510, each injector 510 is configured to couple to a gas inlet 234 of each manifold 206. The injectors 510 receive gas from the gas source 122 through one or more sets of gas pipelines. In some embodiments, which can be combined with other embodiments disclosed herein, three separate sets of gas pipelines or zones are provided. A central zone 502 includes injectors 510 which provide gas to a first set of manifolds disposed in a center region of the gas distribution assembly 128. Each of the injectors 510 in the central zone 502 are in fluid communication with one another and collectively controlled by a central zone controller 512. The central zone controller 512 controls a first gas flow rate from the gas source 122 to the central zone 502 using a first pressure control valve 522. A corner zone 504 includes injectors 510 which provide gas to a second set of manifolds disposed in the corner regions of the gas distribution assembly 128. Each of the injectors 510 in the corner zone 504 of the gas flow plate 130 are in fluid communication with one another and collectively controlled by a corner zone controller 514. The corner zone controller 514 controls a second gas flow rate from the gas source 122 to the corner zone 504 using a second pressure control valve 524. An edge zone 506 includes injectors 510 which provide gas to a third set of manifolds disposed in the edge regions of the gas distribution assembly 128. Each of the injectors 510 in the edge zone 506 of the gas flow plate 130 are in fluid communication with one another and collectively controlled by a edge zone controller 516. The edge zone controller 516 controls a third gas flow rate from the gas source 122 to the edge zone 506 using a third pressure control valve 526. A gas flow controller 540 controls a source pressure control valve 530 which controls the gas flow rate from the gas source 122 to the zones 502, 504, and 506. Although FIG. 5 depicts a particular arrangement of zones, other arrangements are contemplated depending upon the type of process and the arrangement of the gas distribution assembly 128. In particular, it has been discovered that processes using an example gas distribution assembly 128 described herein enable improved uniformity and reduced reliance on flow rate control of the gas plate 130. In some embodiments, which can be combined with other embodiments described herein, an example gas distribution assembly 128 described herein is used with a single zone or two zones of gas flow control (e.g., two or more zones 502, 504, 506 combined, and/or different zone arrangement).

[0032] In summation, the gas distribution assembly described herein enables high uniformity gas distribution and high uniformity film deposition. The gas distribution assembly includes a frame with a first portion and a second portion that are parallel and opposite one another. Manifolds are disposed parallel to and between the first portion and the second portion. Each manifold has a first face and a second face. The first face has a gas inlet, and the second face has outlets. The gas distribution assembly includes nozzles. Each nozzle is coupled to one of the outlets of the second face and each nozzle includes a nozzle pinhole extending from an outlet of each nozzle. The gas distribution assembly includes tubes with each tube having a first end coupled to a first manifold of the manifolds and a second end coupled to a second manifold of the manifolds. Each of the tubes are disposed parallel to one another.

[0033] Certain features, structures, compositions, materials, or characteristics described herein may be combined in any suitable manner in one or more embodiments. Although the present disclosure herein has been described with reference to particular embodiments, it is to be understood that these embodiments are merely illustrative of the principles and applications of the present disclosure. It will be apparent to those skilled in the art that various modifications and variations can be made to the method and systems of the present disclosure. Thus, it is intended that the present disclosure include modifications and variations that are within the scope of the appended claims and their equivalents.

Claims

Claims:

1. A gas distribution assembly, comprising: a frame comprising a first portion and a second portion, the second portion parallel and opposite the first portion; a plurality of manifolds disposed parallel to and between the first portion and the second portion, each manifold disposed parallel to one another, each manifold comprising a first face and a second face, the first face comprising a gas inlet, and the second face comprising a plurality of outlets; a plurality of nozzles, each nozzle removably coupled to one of the plurality of outlets of the second face, each nozzle comprising a nozzle pinhole extending from an outlet of each nozzle; and a plurality of tubes, each tube comprising a first end coupled to a first manifold of the plurality of manifolds and a second end coupled to a second manifold of the plurality of manifolds, each of the tubes disposed parallel to one another.

2. The gas distribution assembly of claim 1, wherein the frame further comprises support beams extending from the first portion to the second portion, the plurality of manifolds configured to removably couple to one or more of the support beams.

3. The gas distribution assembly of claim 2, wherein the plurality of tubes are removably coupled to one or more of the plurality of manifolds.

4. The gas distribution assembly of claim 1, wherein each pinhole comprises a length (L) and a diameter (D), wherein a restriction constant defined by a ratio of L and D⁴ through the pinhole is greater than 10³

5. The gas distribution assembly of claim 4, wherein the restriction constant is greater than 1.6 x 10³.

6. The gas distribution assembly of claim 1, wherein each nozzle comprises a metal, a metal oxide, a metal nitride, aluminum, aluminum oxide, silicon carbide, quartz, or combinations thereof.

7. The gas distribution assembly of claim 1, the plurality of manifolds further comprising: a first set of manifolds, each of the first set of manifolds arranged end to end forming a first set of manifold end interfaces, each manifold end of the first set of manifold interfaces is removably coupled to a support beam of the frame; and a second set of manifolds adjacent and spaced apart from the first set of manifolds, each of the second set of manifolds arranged end to end forming a second set of manifold end interfaces, each manifold end of the second set of manifold interfaces is removably coupled to a support beam of the frame.

8. The gas distribution assembly of claim 7, wherein each manifold of the first set of manifolds further comprises one or more channels in fluid communication with the inlet on each first face of each manifold of the first set of manifolds, the nozzle on each second face of each manifold, one or more channels of other manifolds at manifold end interfaces, and at least one of the plurality of tubes.

9. The gas distribution assembly of claim 1 , wherein at least one nozzle of the plurality of nozzles is in fluid communication with a channel in one manifold of the plurality of manifolds and a tube fluidly coupled to the channel of the manifold.

10. A gas distribution assembly, comprising: a plurality of manifolds disposed adjacent to one another, each manifold comprising a first face and a second face, the first face comprising a gas inlet, and the second face comprising a plurality of outlets; a plurality of nozzles, each nozzle removably coupled to one or more of the plurality of outlets of the second face, each nozzle comprising a nozzle pinhole extending from an outlet of each nozzle; and a plurality of tubes, each tube comprising a first end coupled to a first manifold of the plurality of manifolds and a second end coupled to a second manifold of the plurality of manifolds, each nozzle is disposed proximate to one or more of the first and second end of the plurality of tubes, each of the tubes comprising a plurality of perforations.

11. The gas distribution assembly of claim 10, wherein a first tube and a second tube of the plurality of tubes are spaced by about 1 inch to about 3 inches.

12. The gas distribution assembly of claim 10, wherein the each first face of the manifolds is in fluid communication with a gas flow plate.

13. The gas distribution assembly of claim 10, wherein the tubes comprise a tube length of about 12 inches to about 20 inches and an inner diameter of 0.2 inches to about 0.3 inches.

14. The gas distribution assembly of claim 10, wherein each pinhole comprises a length (L) and a diameter (D), wherein a restriction constant defined by a ratio of L and D⁴ through the pinhole is greater than 10³

15. The gas distribution assembly of claim 10, wherein each nozzle is threaded and is coupled to a threaded outlet of each manifold.

16. The gas distribution assembly of claim 10, wherein the manifolds are coupled to a gas flow plate, wherein a gas flow to each manifold is controlled in a first zone and second zone of the gas flow plate, wherein the first zone comprises a first set of gas conduit providing gas to a first set of manifolds disposed in a central region of a gas flow plate, and the second zone comprises a second set of gas conduit providing gas to a second set of manifolds disposed in a peripheral region of the gas flow plate.

17. A process chamber, comprising: a gas distribution assembly, comprising: a plurality of manifolds; a plurality of tubes comprising a plurality of perforations, the plurality of tubes extending between adjacent manifolds and in fluid communication with at least one manifold of the plurality of manifolds, the plurality of manifolds and the plurality of tubes forming a planar arrangement comprising a first face and a second face; a plurality of nozzles removably coupled to the second face, each nozzle comprising a nozzle pinhole at an outlet of each nozzle; a gas inlet disposed on one or more of the plurality of manifolds, the gas inlet disposed on the first face of the planar arrangement; and a substrate support disposed in the process chamber opposing the second face of the planar arrangement.

18. The process chamber of claim 17, wherein the planar arrangement comprises a width of about 80 inches to about 100 inches wide, and a length of about 60 inches to about 80 inches.

19. The process chamber of claim 17, wherein each nozzle is threaded and is coupled to a threaded outlet on the second face of the planar arrangement.

20. The process chamber of claim 17, wherein each pinhole comprises a length (L) and a diameter (D), wherein a restriction constant defined by a ratio of L and D⁴ through the pinhole is greater than 10^-3.