CN115074701B - Air inlet device of semiconductor process equipment and semiconductor process equipment - Google Patents
Air inlet device of semiconductor process equipment and semiconductor process equipment Download PDFInfo
- Publication number
- CN115074701B CN115074701B CN202210610330.7A CN202210610330A CN115074701B CN 115074701 B CN115074701 B CN 115074701B CN 202210610330 A CN202210610330 A CN 202210610330A CN 115074701 B CN115074701 B CN 115074701B
- Authority
- CN
- China
- Prior art keywords
- air inlet
- side wall
- air
- cylinder
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title claims abstract description 90
- 230000008569 process Effects 0.000 title claims abstract description 87
- 239000004065 semiconductor Substances 0.000 title claims abstract description 27
- 238000006243 chemical reaction Methods 0.000 claims description 54
- 238000012545 processing Methods 0.000 claims description 6
- 239000000376 reactant Substances 0.000 abstract description 9
- 239000002245 particle Substances 0.000 abstract description 8
- 239000007789 gas Substances 0.000 description 120
- 239000010410 layer Substances 0.000 description 10
- 238000005229 chemical vapour deposition Methods 0.000 description 8
- 238000000151 deposition Methods 0.000 description 7
- 230000008021 deposition Effects 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 5
- 239000006227 byproduct Substances 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 238000012423 maintenance Methods 0.000 description 4
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000009434 installation Methods 0.000 description 3
- 239000011229 interlayer Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000002156 mixing Methods 0.000 description 3
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 239000013049 sediment Substances 0.000 description 2
- 239000013589 supplement Substances 0.000 description 2
- 230000005856 abnormality Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010891 electric arc Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000009969 flowable effect Effects 0.000 description 1
- 239000008187 granular material Substances 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 239000011553 magnetic fluid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000009423 ventilation Methods 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/4558—Perforated rings
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
- C23C16/402—Silicon dioxide
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45587—Mechanical means for changing the gas flow
- C23C16/45591—Fixed means, e.g. wings, baffles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
- H01J37/32449—Gas control, e.g. control of the gas flow
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
Abstract
The application discloses an air inlet device of semiconductor process equipment and the semiconductor process equipment, wherein the air inlet device comprises: the device comprises an air inlet cylinder and a plurality of first air inlet pipes, wherein a first annular cavity is formed in the side wall of the air inlet cylinder, a plurality of first air outlet through holes are formed in the side wall of the air inlet cylinder along the circumferential direction of the air inlet cylinder, the diameter of each first air outlet through hole is not larger than a preset value, the plurality of first air inlet pipes are arranged at the top end of the outer surface of the side wall of the air inlet cylinder at equal intervals along the circumferential direction of the air inlet cylinder, the first air inlet pipes extend along the radial direction of the air inlet cylinder, one end of each first air inlet pipe is communicated with the first annular cavity, and the other end of each first air inlet pipe is used for introducing first process gas. The method can prevent the lateral air inlet from being blocked by reactant particles and improve the uniformity of lateral air inlet.
Description
Technical Field
The application relates to the technical field of semiconductor manufacturing, in particular to an air inlet device of semiconductor process equipment and the semiconductor process equipment.
Background
An important process in integrated circuit chip fabrication is the deposition of silicon oxide, which is typically performed by a Plasma Enhanced Chemical Vapor Deposition (PECVD) method suitable for low temperature deposition due to thermal budget considerations for integrated circuit fabrication. PECVD based on the principle of Capacitively Coupled Plasma (CCP) is generally satisfactory, but when deposition of silicon oxide is required in a structure having a certain aspect ratio, PECVD based on the principle of CCP is not satisfactory because deposition tends to produce a capping effect at the opening of the structure having the aspect ratio, thereby forming voids (void) inside the structure. For silicon oxide deposition with an aspect ratio structure, many solutions have been proposed, such as high density plasma chemical vapor deposition (HDP CVD) based on Inductively Coupled Plasma (ICP) principles, sub-atmospheric chemical vapor deposition (SACVD), flowable Chemical Vapor Deposition (FCVD), and the like. Although SACVD and FCVD have stronger pore-filling capability than HDP CVD, the film quality is worse than that of HDP CVD, the density is low, and moisture absorption is easy.
The conventional HDP CVD apparatus typically employs the introduction of SiH into a process chamber 4 And O 2 Gas-filled Shallow Trench Isolation (STI), interlayer dielectric (ILD), inter-metal dielectric (IMD), passivation (passage), etc., but due to SiH 4 And O 2 Direct mixing is prone to chemical reactions and particle problems, so SiH is required to be supplied through an air inlet device in existing high-density plasma chemical vapor deposition equipment 4 And O 2 Into the reaction chamber from the top and side of the chamber, respectively.
However, the lateral air inlet of the existing air inlet device has the problem that the air inlet holes are easily blocked by reactant particles to cause abnormality and the lateral air inlet is uneven.
Disclosure of Invention
The application aims to provide an air inlet device of semiconductor process equipment and the semiconductor process equipment, which can prevent a lateral air inlet from being blocked by reactant particles and improve the lateral air inlet uniformity.
In a first aspect, the present application provides an air inlet device of a semiconductor process apparatus, where the semiconductor process apparatus includes a reaction chamber and a carrying device disposed in the reaction chamber and used for carrying a wafer, the air inlet device includes an air inlet cylinder and a plurality of first air inlet pipes, a first annular cavity is disposed in a sidewall of the air inlet cylinder, a plurality of first air outlet through holes are disposed on the sidewall of the air inlet cylinder along a circumferential direction of the sidewall of the air inlet cylinder, a diameter of each first air outlet through hole is not greater than a preset value, a plurality of first air inlet pipes are disposed on top of an outer surface of the sidewall of the air inlet cylinder at equal intervals along the circumferential direction of the air inlet cylinder, the first air inlet pipes extend along a radial direction of the air inlet cylinder, one end of each first air inlet pipe is communicated with the first annular cavity, and the other end of each first air inlet pipe is used for introducing a first process gas.
Optionally, the side wall of the air inlet cylinder comprises a first side wall and a second side wall which are concentrically arranged, the second side wall is located at the periphery of the first side wall, a first annular cavity is formed between the first side wall and the second side wall, and a plurality of first air outlet through holes are formed in the first side wall and/or the second side wall.
Optionally, the air inlet device further comprises a plurality of first edge air inlet pipelines, and one end of each first edge air inlet pipeline passes through the side wall of the reaction chamber to be communicated with one first air inlet pipe;
the top of the other end of the first air inlet pipe is provided with a first extending part which transversely extends, the bottom of one end of the first edge air inlet pipeline is provided with a second extending part which transversely extends, and the first extending part is used for being in lap joint with the second extending part so that the first air inlet pipe is communicated with the first edge air inlet pipeline.
Optionally, the air inlet device further comprises a cylindrical annular baffle, the top of the annular baffle is connected with the bottom of the air inlet cylinder, the annular baffle is coaxially arranged with the air inlet cylinder, the annular baffle is used for encircling the bearing device, and the annular baffle can at least partially accommodate the bearing device along the axial direction of the bearing device.
Optionally, the top of the annular baffle plate is connected with the bottom of the air inlet cylinder through a plurality of support rods, and each support rod is overlapped with one first air inlet pipe in the vertical direction.
Optionally, a second annular cavity is formed in the side wall of the annular baffle, a plurality of layers of second air outlet through holes are formed in the inner wall surface of the side wall of the annular baffle along the circumferential direction of the annular baffle, and the diameter of each second air outlet through hole is not larger than the preset value;
the air inlet device further comprises a plurality of second air inlet pipes, the second air inlet pipes are arranged at the bottom ends of the outer surfaces of the side walls of the annular baffle at equal intervals along the circumferential direction of the annular baffle, the second air inlet pipes extend along the radial direction of the annular baffle, one ends of the second air inlet pipes are communicated with the second annular cavity, and the other ends of the second air inlet pipes are used for introducing second process gas.
Optionally, the air inlet device further comprises a plurality of second edge air inlet pipelines, and one end of each second edge air inlet pipeline passes through the side wall of the reaction chamber and is communicated with one second air inlet pipe;
the top of the other end of the second air inlet pipe is provided with a third extending part which transversely extends, the bottom of one end of the second edge air inlet pipeline is provided with a fourth extending part which transversely extends, and the third extending part is used for being in lap joint with the fourth extending part so that the second air inlet pipe is communicated with the second edge air inlet pipeline.
Optionally, the preset value is 0.1 mm-1 mm.
Optionally, the gas inlet device further comprises a central gas inlet pipeline positioned at the top of the reaction chamber, and the central gas inlet pipeline is used for introducing the second process gas.
In a second aspect, the present application provides a semiconductor processing apparatus, including the reaction chamber and the carrying device disposed in the reaction chamber and used for carrying a wafer, where the air inlet device adopts the air inlet device of the semiconductor processing apparatus in the first aspect.
The application has the beneficial effects that:
the air inlet device adopts the air inlet cylinder to carry out lateral air inlet, the top end of the outer surface of the side wall of the air inlet cylinder is provided with a plurality of first air inlet pipes at equal intervals along the circumferential direction of the air inlet cylinder, the side wall of the air inlet cylinder is internally provided with a first annular cavity, the side wall of the air inlet cylinder is provided with a plurality of first air outlet through holes along the circumferential direction of the air inlet cylinder, one end of each first air inlet pipe is communicated with the first annular cavity, the other end of each first air inlet pipe is used for introducing first process gas, and the diameter of each first air outlet through hole is not larger than a preset value, so that the air flow out of the process gas is fast when the process gas is introduced, the plasma can be prevented from flowing backwards into the first air outlet through holes to form a blockage, in the first air outlet through holes with small apertures under the plasma environment, the plasma is difficult to drill into the first air outlet through holes, the blockage can be further avoided, and meanwhile, the plurality of first air inlet pipes are arranged at equal intervals along the circumferential direction of the air inlet cylinder at the top end of the side wall of the air inlet cylinder, and the uniformity of the air distribution in the first cavity can be effectively improved.
The device of the present application has other features and advantages which will be apparent from or are set forth in detail in the accompanying drawings and the following detailed description, which are incorporated herein, and which together serve to explain certain principles of the application.
Drawings
The foregoing and other objects, features and advantages of the application will be apparent from the following more particular descriptions of exemplary embodiments of the application as illustrated in the accompanying drawings wherein like reference numbers generally represent like parts throughout the exemplary embodiments of the application.
Fig. 1 shows a structural view of an air intake device of the related art one.
Fig. 2 shows a structural diagram of an air intake device of the second prior art.
Fig. 3 shows a front view of an air intake device of embodiment 1 of the present application.
Fig. 4 shows a top view of an air intake device of embodiment 1 of the present application.
Fig. 5 shows a schematic diagram of an air inlet device for top edge air inlet in a reaction chamber according to embodiment 1 of the present application.
Fig. 6 shows a schematic diagram of the overlap fit between the first air inlet pipe and the first edge air inlet pipe in the air inlet device according to embodiment 1 of the present application.
Fig. 7 shows a schematic view of a bottom edge gas inlet performed in a reaction chamber by a gas inlet device according to embodiment 2 of the present application.
Fig. 8 shows a schematic view of an air inlet device of embodiment 3 of the present application for simultaneously introducing air at the top edge and the bottom edge in a reaction chamber.
Fig. 9 shows a schematic view of an air inlet device of embodiment 3 of the present application for performing another simultaneous air inlet at the top edge and the bottom edge in the reaction chamber.
Detailed Description
As shown in FIG. 1, the prior art discloses a high density plasma chemistryInlet structure of vapor deposition equipment, siH 4 And O 2 The reaction chamber is respectively introduced from the top and the side of the chamber (only the side air inlet holes are shown in the figure, the top air inlet holes are not shown), a plurality of air inlet pipes 106 for lateral air inlet are arranged in the circumference of the side wall 102 of the chamber in the figure, the end parts of the air inlet pipes 106 are provided with air inlet holes 110, the aperture of the air inlet holes 110 is larger, and SiH exists 4 And O 2 The problem of mixing in advance and producing the granule and plugging up the air inlet to need to change the inlet port one by one when equipment maintenance, more waste time, air inlet structure 106 needs the knob to unscrew again and reload new, and the position of dismantlement installation all needs to take the reference numeral to correspond each time moreover, just can guarantee the homogeneity, and this air inlet structure still has the problem that the chamber wall was polluted by the deposit simultaneously.
As shown in fig. 2, the second prior art discloses a ring-shaped gas inlet structure of a high-density plasma chemical vapor deposition apparatus, siH 4 And O 2 The gas is introduced into the reaction chamber from the top and side of the chamber (only side gas inlet holes are shown in the figure, top gas inlet holes are not shown), and the inner edge wall surface of the annular gas inlet pipeline 96 is provided with a vent 104, but only one end of the annular gas inlet pipeline 96 is communicated with an external gas path through a connecting pipe 98, so that the gas in the whole annular gas inlet pipeline 96 is unevenly distributed, the annular gas inlet pipeline 96 is difficult to process, the equipment maintenance cost is high, and the chamber wall is polluted by sediment.
The application provides an air inlet device of plasma semiconductor process equipment and the semiconductor process equipment, which can prevent a lateral air inlet hole from being blocked by reactant particles, improve the uniformity of lateral air inlet, and effectively prevent the reactant from polluting the chamber wall.
The application will be described in more detail below with reference to the accompanying drawings. While the preferred embodiments of the present application are illustrated in the drawings, it should be understood that the present application may be embodied in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the application to those skilled in the art.
Example 1
As shown in fig. 3 to 6, an air inlet device of a semiconductor process device comprises a reaction chamber and a carrying device arranged in the reaction chamber 200 and used for carrying a wafer, the air inlet device comprises an air inlet cylinder 1 and a plurality of first air inlet pipes 2, a first annular cavity is formed in the side wall of the air inlet cylinder 1, a plurality of first air outlet through holes are formed in the side wall of the air inlet cylinder 1 along the circumferential direction of the air inlet cylinder, the diameter of each first air outlet through hole is not larger than a preset value, the plurality of first air inlet pipes 2 are arranged at the top end of the outer surface of the side wall of the air inlet cylinder 1 at equal intervals along the circumferential direction of the air inlet cylinder 1, the first air inlet pipes 2 extend along the radial direction of the air inlet cylinder 1, one ends of the first air inlet pipes 2 are communicated with the first annular cavity, and the other ends of the first air inlet pipes are used for introducing first process gases.
In this embodiment, the sidewall of the air inlet cylinder 1 includes a first sidewall and a second sidewall that are concentrically disposed, the second sidewall is located at the periphery of the first sidewall, a first annular cavity is formed between the first sidewall and the second sidewall, and a plurality of first air outlet through holes are formed in the first sidewall and/or the second sidewall. Alternatively, the preset value is 0.01 to 1mm, and preferably, the diameter of the first air outlet through hole is 0.1mm.
Specifically, as shown in fig. 3 and fig. 4, the whole air inlet cylinder 1 is in a shower shape, the side wall of the air inlet cylinder 1 is in a double-layer structure, a gap interlayer is arranged between the inner side wall and the outer side wall, the annular gap interlayer forms the annular cavity, a plurality of first air inlet pipes 2 at the top of the air inlet cylinder 1 are used for uniformly conveying process gases in the gas cylinder to the air inlet cylinder 1, so that uneven air inlet caused by different gas pressures of all parts is avoided, the number of the first air inlet pipes 2 can be changed according to the requirement, but symmetry is kept, for example, the number of the first air inlet pipes can be 2, 4, 6 or 8. The diameter of the opening of the first air outlet through hole on the air inlet cylinder 1 is selected to be 0.01-1 mm, preferably 0.1mm, and the opening is smaller than the size of the air inlet hole (generally 0.35-0.5 mm) in the prior art, so that the reactant can be effectively prevented from flowing back into the air inlet to generate particles so as to block the air inlet.
The specific principle of avoiding the blockage of the first air inlet through hole is as follows:
because the aperture of the first air inlet through hole is small, the airflow velocity is large, and the plasma backflow into the hole can be prevented from being blocked; meanwhile, under the plasma environment, the inner surface of the air inlet hole can gather an electric field and strengthen parasitic plasma nearby, according to Paschen's law (the breakdown voltage of the electric arc or discharge between the two electrodes is a function of the product of the pressure of the gas and the distance between the electrodes), after the size (gap) is small to a certain extent, the gas is less likely to be started by the discharge in the place where the size is smaller, namely, the plasma is difficult to drill into the air hole, so that the generation of blockage is avoided.
Paschen law: parallel plate capacitor DC breakdown voltage V B The function of the cavity pressure p and the gap spacing d is as follows:
where A and B are constants related to gas properties and γ is a constant related to parallel plate electrode material.
It should be noted that the non-porous location of the inner peripheral wall surface of the inlet cylinder 1, due to its large size, has a plasma distribution according to paschen's law and therefore also deposits of by-products, which can be removed and cleaned only during maintenance of the chamber.
The wafer carrying device in this embodiment is an electrostatic chuck 203 in the reaction chamber 200, and the positional relationship between the air inlet device and the electrostatic chuck 203 is: the bottom end of the air inlet cylinder 1 is higher than the bearing surface of the electrostatic chuck 203. In other embodiments, the bearing surface of the electrostatic chuck 203 may also be located inside the air inlet cylinder 1, except that this way the risk of the air inlet being blocked increases: too close to the electrostatic chuck 203 or even below the electrostatic chuck 203 may cause the gas inlet holes to absorb the byproducts on the wafer to form particles to be blocked, so that the bottom end of the gas inlet cylinder 1 is preferably higher than the carrying surface of the electrostatic chuck 203.
In this embodiment, the inner side and the outer side of the air intake cylinder 1 may be independently air-taken in at one side, or may be simultaneously air-taken in at both sides, that is, the first air outlet through hole may be provided only on the inner wall surface (inner air-taken in) or the outer wall surface (outer air-taken in) of the side wall of the air intake cylinder 1, or may be simultaneously provided on the inner surface and the outer surface of the side wall of the air intake cylinder 1 (inner and outer side simultaneously air-taken in). Preferably, the first air outlet through holes are distributed in multiple layers and are uniformly formed in the circumferential direction of the air inlet cylinder 1 on the side wall of the cylinder, so that the uniformity of air inlet is ensured.
As shown in fig. 4, in this embodiment, the air inlet device further includes a plurality of first edge air inlet pipes 5, and one end of each first edge air inlet pipe 5 is connected to one first air inlet pipe 2 through a sidewall of the reaction chamber 200. One end of the first edge gas inlet pipe 5 of this embodiment extends from the top of the reaction chamber 200 to the side wall of the reaction chamber 200, penetrates through the side wall of the chamber and is then communicated with the first gas inlet pipe 2, and the other end of the first edge gas inlet pipe 5 is connected with a gas source (such as a gas bottle) of the first process gas.
As shown in fig. 5, the top of the other end of the first intake pipe 2 has a first extending portion 21 extending laterally, the bottom of one end of the first edge intake pipe 5 has a second extending portion 51 extending laterally, and the first extending portion 21 is adapted to overlap with the second extending portion 51 so as to communicate the first intake pipe 2 with the first edge intake pipe 5.
Specifically, the mode of lap joint is adopted, and when the installation is carried out, the connection of the first edge air inlet pipeline 5 and the first air inlet pipeline 2 only needs to be directly carried out, and sealing is not needed (magnetic fluid sealing can be adopted when necessary), so that the air inlet cylinder 1 and the annular baffle 3 are conveniently and integrally taken and put, the installation and the disassembly are convenient, and the maintenance is convenient.
Referring to fig. 3-6, in this embodiment, the air inlet device further includes an annular baffle 3, the annular baffle 3 is cylindrical, the annular baffle 3 is disposed below the air inlet cylinder 1, the top of the annular baffle 3 is connected with the bottom of the air inlet cylinder 1, the air inlet cylinder 1 and the annular baffle 3 are coaxially disposed, the annular baffle 3 is used for encircling the bearing device, and the annular baffle 3 can at least partially accommodate the bearing device along the axial direction of the bearing device.
Preferably, the outer diameter of the intake cylinder 1 is smaller than the inner diameter of the annular barrier 3, the inner diameter of the annular barrier 3 is larger than the diameter of the electrostatic chuck 203, and the annular barrier 3 encloses the electrostatic chuck 203.
The top of annular baffle 3 is connected through a plurality of bracing pieces 4 with the bottom of inlet cylinder 1, and every bracing piece 4 coincides in vertical direction with a first intake pipe 2, can avoid in the course of the technology bracing piece 4 to cause extra influence to the air current field in vertical direction.
Specifically, the annular baffle plate 3 at the bottom of the inlet cylinder 1 can adsorb reaction byproducts in the reaction chamber 200, prevent the chamber wall from being polluted by the byproducts, divide the reaction chamber 200 into two parts, and improve the air flow field inside the chamber.
In this embodiment, the diameter of the annular baffle 3 ranges from 300mm to 400mm, and the lower limit of the chamber diameter is different for different wafer sizes, preferably similar to the wafer size. The height of the annular baffle 3 ranges from 1 to 200mm, preferably 50mm. Since the height of the annular baffle 3 has an effect on the absorption effect of the byproducts, the bottom end of the annular baffle 3 generally needs to be at least extended down to a level exceeding the surface of the electrostatic chuck 203, and can be extended to the bottom of the bottom electrode 204.
In this embodiment, the material of the air inlet cylinder 1 and the annular baffle 3 is metal or ceramic, and when a metal material is selected, the air inlet cylinder needs to be grounded.
In this embodiment, the apparatus further includes a central gas inlet pipe located at the top of the reaction chamber 200, and the central gas inlet pipe is used for introducing the second process gas. The first process gas and the second process gas according to the embodiment may directly react to generate particulate matters. For example, for plasma deposition of silicon oxide using a high density plasma chemical vapor deposition apparatus, the first process gas may be O 2 The second process gas may be SiH 4 Alternatively, the first process gas may be SiH 4 The second process gas may be O 2 。
In this embodiment, the diameter of the inlet cylinder 1 is in the range of 0-400 mm, preferably 300mm for a reaction chamber 200 of a 12 inch wafer (the preferred values are different for chambers of different wafer sizes). The diameter of the inlet cylinder 1 may be less than or equal to the diameter of the wafer, and when less than the wafer diameter, it may be located within the wafer diameter so as to divide the wafer directly into a central region and an edge region, the upper range of inlet cylinder 1 diameter being related to the wafer size, for example for a 12 inch wafer, the 400mm diameter being the upper limit, preferably the same diameter as the wafer diameter size.
In the air inlet device, the uniformity of the air flow field is difficult to adjust only by central air inlet or edge air inlet when the wafer size is large, and the reaction chamber 200 above the wafer can be divided into two parts by the structural design of the air inlet cylinder 1 and the annular baffle plate 3, so that the air flow field in the chamber is improved. Specifically, the blank area in the center of the air inlet cylinder 1 can facilitate the second process gas to directly reach the central area of the wafer from the central air inlet of the top of the chamber, and the side wall of the air inlet cylinder 1 can directly enter the blank area between the air inlet cylinder 1 and the annular baffle 3, so that edge air can be facilitated to directly reach the edge area of the wafer, the device can be divided into central air inlet and edge air inlet, and the air in the peripheral area of the annular baffle 3 is directly pumped away by the vacuum device 205 (vacuum pump) and does not reach the wafer, so that the distribution of the air flow field is optimized, and the specific three-dimensional relationship is shown in fig. 5.
Furthermore, when the diameter of the air inlet cylinder 1 is equal to the diameter of the wafer, the air inlet cylinder 1 mainly supplements the process gas in the wafer edge area, and only the first air outlet through hole is arranged on the first side wall of the inner side of the air inlet cylinder 1, so that the air inflow of the central air inlet to the wafer edge area can be compensated. When the diameter of the air inlet cylinder 1 is smaller than that of the wafer, the air inlet cylinder 1 can divide the surface of the wafer into a central area and an edge area, at this time, a first air outlet through hole can be arranged on the second side wall at the outer side of the air inlet cylinder 1, at this time, the wafer exposed out of the space at the inner side of the air inlet cylinder 1 can contact with the central air inlet introduced from the top of the chamber, and the wafer outside the air inlet cylinder 1 can be introduced through the first air inlet through hole on the second side wall so as to supplement the air at the edge of the wafer and adjust the uniformity of the air flow field. When the diameter of the air inlet cylinder 1 is smaller than that of the wafer, the first ventilation through holes can be formed in the first side wall and the second side wall of the air inlet cylinder 1 at the same time, at this time, the inner side of the air inlet cylinder 1 can be used for air inlet to the central area of the wafer, and the outer side of the air inlet cylinder 1 can be used for air inlet to the edge area of the wafer, so that the situation is relatively suitable for the wafer with larger size.
In addition, the air inlet device of the embodiment can be independently used without using central air inlet at the top of the cavity, and air inlet of two kinds of process gases is realized only through the air inlet cylinder 1, at this time, a third side wall can be arranged in the first annular cavity in the air inlet cylinder 1, the third side wall is concentric with the first side wall and the second side wall, the third side wall separates the first annular cavity into two layers of annular subcavities which are respectively independent inside and outside, at this time, one end of a part of the first air inlet pipe is communicated with the inner layer subcavities and is used for introducing first process gases, the other first air inlet pipes are communicated with the outer layer subcavities and are used for introducing second gases (avoiding advanced mixing of the two kinds of process gases), meanwhile, first air inlet through holes are simultaneously formed in the first side wall and the second side wall, the first process gases and the second process gases can respectively enter the inner layer subcavities and the outer layer subcavities, and respectively enter the cavity from the first through holes in the first side wall and the second side wall, and the inner layer and outer layer of the air inlet cylinder 11 are realized. It should be noted that, in this air intake mode, the diameter of the air intake cylinder needs to be smaller, for example, the diameter of the air intake cylinder is selected to be one third or one half of the diameter of the wafer, and at this time, the air intake cylinder 1 divides the surface of the wafer into a central area and an edge area, and the air intake cylinder 1 can simultaneously intake air to the central area and the edge area of the wafer, so that the central air intake at the top of the chamber may not be used. Meanwhile, the number of the first air inlet through holes on the first side wall and the second side wall of the air inlet cylinder 1 can be adjusted according to actual demands, and then the air inflow is adjusted.
Example 2
As shown in fig. 7, on the basis of embodiment 1, the side wall of the annular baffle plate 3 in this embodiment has a second annular cavity inside, and the inner wall surface of the side wall of the annular baffle plate 3 is provided with a plurality of layers of second air outlet through holes along the circumferential direction of the annular baffle plate 3;
correspondingly, the device further comprises a plurality of second air inlet pipes 7, the plurality of second air inlet pipes 7 are arranged at the bottom end of the outer surface of the side wall of the annular baffle plate 3 at equal intervals along the circumferential direction of the annular baffle plate 3, the second air inlet pipes 7 extend along the radial direction of the annular baffle plate 3, one ends of the second air inlet pipes 7 are communicated with the second annular cavity, and the other ends of the plurality of second air inlet pipes 7 are used for introducing second process gas.
And, a plurality of second edge air inlet pipes 6, one end of each second edge air inlet pipe 6 is communicated with one second air inlet pipe 7 through the side wall of the reaction chamber 200.
The top of the other end of the second air inlet pipe 7 is provided with a third extending part which transversely extends, the bottom of one end of the second edge air inlet pipeline 6 is provided with a fourth extending part which transversely extends, and after the third extending part is in lap joint with the fourth extending part, the second air inlet pipe 7 is communicated with the second edge air inlet pipeline 6. The way in which the third extension portion mates with the fourth extension portion refers to the way in which the first extension portion 21 mates with the second extension portion 51 of fig. 6.
Preferably, the diameter of the second outlet through hole is 0.01 to 1mm, more preferably 0.1mm.
Referring to fig. 7, in this embodiment, the bottom edge air intake and the central air intake are combined, that is, the second edge air intake pipeline 6 conveys the first process gas from the bottom of the reaction chamber 200 to the bottom of the annular baffle plate 3, and enters the reaction chamber 200 through the second air outlet hole on the annular baffle plate 3, so as to complete the bottom edge air intake (the air intake cylinder 1 does not need to be communicated with an external air path and only conveys the second process gas to the bottom of the annular baffle plate 3 through the second edge air intake pipeline 6 at this time), and the top of the reaction chamber 200 conveys the second process gas to the process chamber through the central air intake pipeline, so as to complete the central air intake. The first process gas may be O 2 The second process gas may be SiH 4 Alternatively, the first process gas may be SiH 4 The second process gas may be O 2 。
At this time, the annular baffle 3 not only plays a role in avoiding the contamination of the chamber wall by the deposit, but also plays a role in guiding air.
In other embodiments, the cylindrical side wall of the annular baffle may be a single-layer side wall, and the side wall is also not provided with an opening, one end of the second air inlet pipe is directly communicated with the space enclosed by the annular baffle 3, and the first process gas can directly enter the space enclosed by the annular baffle 3 from the plurality of second air inlet pipes, so that the annular baffle can also play a role in avoiding the sediment from polluting the chamber wall and guiding the air.
Example 3
On the basis of embodiment 1 and embodiment 2, in the gas inlet device of this embodiment, the gas inlet cylinder 1 and the annular baffle 3 can be used to perform edge gas inlet simultaneously, so that two process gases can be separated to perform edge gas inlet simultaneously.
As shown in fig. 8, one end of the first edge gas inlet pipe 5 extends from the top of the reaction chamber 200 to the side wall of the reaction chamber 200, penetrates through the side wall of the chamber and is communicated with the first gas inlet pipe 2, and the other end of the first edge gas inlet pipe 5 is connected with a gas source (such as a gas bottle) of the first process gas, so that the first process gas can be conveyed to the top of the gas inlet cylinder 1, and top edge gas inlet is realized.
Meanwhile, one end of the second edge air inlet pipeline 6 extends from the bottom of the reaction chamber 200 to the side wall of the reaction chamber 200, penetrates through the side wall of the chamber and is communicated with the second air inlet pipe 7, and the other end of the second edge air inlet pipeline 6 is connected with a gas source (such as a gas bottle) of second process gas, so that the second process gas can be conveyed to the top of the bottom of the annular baffle plate 3, and bottom edge air inlet is realized.
The first process gas and the second process gas of this embodiment may directly react to generate particulates, so that the top edge gas inlet of the first process gas and the bottom edge gas inlet of the second process gas need to be performed simultaneously. For plasma deposition of silicon oxide using high density plasma chemical vapor deposition equipment, the first process gas may be O 2 The second process gas may be SiH 4 。
Another edge feed mode of this embodiment is shown in fig. 9, when the locations of the two sources are fixed, such as the first process gas (e.g., O 2 ) From the top of the process chamber, a second process gas (e.g., siH 4 ) The gas supply of the first process gas and the second process gas is interchanged from the bottom of the process chamber, i.e. the first process gas is supplied to the bottom of the annular barrier 3 via the second edge gas inlet line 6 and the second process gas is supplied to the bottom of the annular barrier 3 via the first edge gas inlet line 5.
Correspondingly, the first edge gas inlet pipe 5 and the second edge gas inlet pipe 6 need to be redesigned, referring to fig. 9, one end of the second edge gas inlet pipe 6 extends from the top of the reaction chamber 200 to the side wall of the reaction chamber 200, penetrates through the side wall of the chamber and then is communicated with the second gas inlet pipe 7 at the bottom of the annular baffle plate 3, and the other end of the second edge gas inlet pipe 6 is communicated with the first process gas (O 2 ) The first process gas can be delivered to the bottom of the annular baffle 3 to achieve bottom edge gas inlet. Meanwhile, one end of the first edge gas inlet pipe 5 extends from the bottom of the reaction chamber 200 to the sidewall of the reaction chamber 200, penetrates the sidewall of the chamber and communicates with the first gas inlet pipe 2, and the other end of the first edge gas inlet pipe 5 communicates with the second process gas (SiH) 4 ) The gas source connection of (2) can deliver the second process gas to the top of the inlet cylinder 1 to achieve top edge inlet.
The first process gas and the second process gas of this embodiment may react directly to form reactants, so the top edge and bottom edge gas feeds of the two process gases need to be performed simultaneously.
In other embodiments, in the case that the positions of the first edge air inlet pipeline 5 and the second edge air inlet pipeline 6 are fixed, the positions of the air sources can be replaced optionally, so that the two gases of the top edge air inlet and the bottom edge air inlet can be exchanged.
Example 4
As shown in fig. 5, 7, 8 or 9, the present embodiment provides a semiconductor processing apparatus, which includes a reaction chamber 200 and a carrier device disposed in the reaction chamber 200 for carrying a wafer, and the air inlet device is an air inlet device of any of the semiconductor processing apparatuses of embodiments 1-3.
Specifically, a first rf coil 201 is disposed on the top wall of the reaction chamber 200, a second rf coil 202 is disposed on the top of the side wall of the reaction chamber 200, and the first rf coil 201 and the second rf coil 202 are used for ionizing the process gas introduced into the reaction chamber 200 into plasma; an electrostatic chuck 203 for carrying a wafer is arranged below the inner part of the reaction chamber 200, a lower electrode 204 is arranged below the electrostatic chuck 203, and the bottom of the reaction chamber 200 is communicated with a vacuumizing device 205; the gas inlet means is for introducing a process gas into the reaction chamber 200. The method comprises the steps of carrying out a first treatment on the surface of the The air inlet device adopts the air inlet device of the plasma semiconductor process equipment in any of the embodiments 1-3.
The semiconductor process equipment of the present embodiment may include plasma-related semiconductor equipment such as high-density plasma chemical vapor deposition equipment, etchers, and PVD equipment.
The semiconductor process equipment of the embodiment can effectively avoid the blockage of the lateral air inlet hole by reactant particles by adopting any air inlet device of the embodiments 1-3, improve the lateral air inlet uniformity and effectively avoid the pollution of the reactant to the chamber wall.
The foregoing description of embodiments of the application has been presented for purposes of illustration and description, and is not intended to be exhaustive or limited to the embodiments disclosed. Many modifications and variations will be apparent to those of ordinary skill in the art without departing from the scope and spirit of the various embodiments described.
Claims (10)
1. The gas inlet device of the semiconductor process equipment comprises a reaction chamber and a bearing device arranged in the reaction chamber and used for bearing a wafer, and is characterized in that the gas inlet device comprises a gas inlet cylinder and a plurality of first gas inlet pipes, a first annular cavity is formed in the side wall of the gas inlet cylinder, a plurality of first gas outlet through holes are formed in the side wall of the gas inlet cylinder along the circumferential direction of the gas inlet cylinder, the diameter of each first gas outlet through hole is not larger than a preset value, the plurality of first gas inlet pipes are arranged at the top end of the outer surface of the side wall of the gas inlet cylinder at equal intervals along the circumferential direction of the gas inlet cylinder, the first gas inlet pipes extend along the radial direction of the gas inlet cylinder, one end of each first gas inlet pipe is communicated with the first annular cavity, and the other end of each first gas inlet pipe is used for introducing first process gas;
the air inlet device further comprises a plurality of first edge air inlet pipelines, and one end of each first edge air inlet pipeline penetrates through the side wall of the reaction chamber to be communicated with one first air inlet pipe.
2. The air inlet device according to claim 1, wherein the side wall of the air inlet cylinder comprises a first side wall and a second side wall which are concentrically arranged, the second side wall is located on the periphery of the first side wall, the first annular cavity is formed between the first side wall and the second side wall, and a plurality of first air outlet through holes are formed in the first side wall and/or the second side wall.
3. The air intake apparatus of claim 1, wherein a top portion of the other end of the first air intake pipe has a first extending portion extending laterally, and a bottom portion of the one end of the first edge air intake pipe has a second extending portion extending laterally, the first extending portion for overlapping engagement with the second extending portion to communicate the first air intake pipe with the first edge air intake pipe.
4. The air intake device of claim 1, further comprising a cylindrical annular baffle, the top of the annular baffle being connected to the bottom of the air intake cylinder and the annular baffle being coaxially disposed with the air intake cylinder, the annular baffle being configured to surround the carrier and being capable of at least partially receiving the carrier in an axial direction of the carrier.
5. The air intake apparatus according to claim 4, wherein the top of the annular baffle plate and the bottom of the air intake cylinder are connected by a plurality of support rods, each of which coincides with one of the first air intake pipes in the vertical direction.
6. The air inlet device according to claim 4, wherein a second annular cavity is formed in the side wall of the annular baffle plate, a plurality of layers of second air outlet through holes are formed in the inner wall surface of the side wall of the annular baffle plate along the circumferential direction of the annular baffle plate, and the diameter of each second air outlet through hole is not larger than the preset value;
the air inlet device further comprises a plurality of second air inlet pipes, the second air inlet pipes are arranged at the bottom ends of the outer surfaces of the side walls of the annular baffle at equal intervals along the circumferential direction of the annular baffle, the second air inlet pipes extend along the radial direction of the annular baffle, one ends of the second air inlet pipes are communicated with the second annular cavity, and the other ends of the second air inlet pipes are used for introducing second process gas.
7. The air intake apparatus of claim 6, further comprising a plurality of second edge air intake conduits, one end of each of the second edge air intake conduits communicating with one of the second air intake conduits through a sidewall of the reaction chamber;
the top of the other end of the second air inlet pipe is provided with a third extending part which transversely extends, the bottom of one end of the second edge air inlet pipeline is provided with a fourth extending part which transversely extends, and the third extending part is used for being in lap joint with the fourth extending part so that the second air inlet pipe is communicated with the second edge air inlet pipeline.
8. The air intake device of claim 1 or 6, wherein the preset value is 0.1mm to 1mm.
9. The gas inlet device of claim 5, further comprising a central gas inlet line at the top of the reaction chamber for introducing a second process gas.
10. A semiconductor processing apparatus comprising the reaction chamber and the carrier device disposed in the reaction chamber for carrying a wafer, wherein the air inlet device employs the semiconductor processing apparatus of any one of claims 1-9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210610330.7A CN115074701B (en) | 2022-05-31 | 2022-05-31 | Air inlet device of semiconductor process equipment and semiconductor process equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210610330.7A CN115074701B (en) | 2022-05-31 | 2022-05-31 | Air inlet device of semiconductor process equipment and semiconductor process equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN115074701A CN115074701A (en) | 2022-09-20 |
| CN115074701B true CN115074701B (en) | 2023-10-27 |
Family
ID=83249463
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210610330.7A Active CN115074701B (en) | 2022-05-31 | 2022-05-31 | Air inlet device of semiconductor process equipment and semiconductor process equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN115074701B (en) |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20100071604A (en) * | 2008-12-19 | 2010-06-29 | 세메스 주식회사 | Apparatus for high density plasma chemical vapor deposition with nozzle capable of controlling spray angle |
| CN104046960A (en) * | 2014-06-24 | 2014-09-17 | 北京七星华创电子股份有限公司 | Gas distributor applied to thin film deposition technology |
| WO2017097163A1 (en) * | 2015-12-09 | 2017-06-15 | 北京七星华创电子股份有限公司 | Gas distributor for use with film deposition technique |
| CN108677167A (en) * | 2018-06-27 | 2018-10-19 | 沈阳拓荆科技有限公司 | Spray equipment, chemical vapor depsotition equipment and its operating method of semiconductor coated film equipment |
| CN111725102A (en) * | 2020-06-18 | 2020-09-29 | 北京北方华创微电子装备有限公司 | Furnace tube in semiconductor process equipment and semiconductor process equipment |
| CN112359343A (en) * | 2020-09-29 | 2021-02-12 | 北京北方华创微电子装备有限公司 | Gas inlet device of semiconductor process equipment and semiconductor process equipment |
| CN112941626A (en) * | 2021-01-22 | 2021-06-11 | 北京北方华创微电子装备有限公司 | Air inlet assembly and air inlet device of process chamber and semiconductor processing equipment |
| WO2021197200A1 (en) * | 2020-04-03 | 2021-10-07 | 北京北方华创微电子装备有限公司 | Gas distributor in semiconductor device and semiconductor device |
| WO2022077942A1 (en) * | 2020-10-15 | 2022-04-21 | 长鑫存储技术有限公司 | Diffusion furnace |
| CN114481311A (en) * | 2021-12-24 | 2022-05-13 | 北京北方华创微电子装备有限公司 | Gas inlet module of semiconductor process equipment and semiconductor process equipment |
-
2022
- 2022-05-31 CN CN202210610330.7A patent/CN115074701B/en active Active
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20100071604A (en) * | 2008-12-19 | 2010-06-29 | 세메스 주식회사 | Apparatus for high density plasma chemical vapor deposition with nozzle capable of controlling spray angle |
| CN104046960A (en) * | 2014-06-24 | 2014-09-17 | 北京七星华创电子股份有限公司 | Gas distributor applied to thin film deposition technology |
| WO2017097163A1 (en) * | 2015-12-09 | 2017-06-15 | 北京七星华创电子股份有限公司 | Gas distributor for use with film deposition technique |
| CN108677167A (en) * | 2018-06-27 | 2018-10-19 | 沈阳拓荆科技有限公司 | Spray equipment, chemical vapor depsotition equipment and its operating method of semiconductor coated film equipment |
| WO2021197200A1 (en) * | 2020-04-03 | 2021-10-07 | 北京北方华创微电子装备有限公司 | Gas distributor in semiconductor device and semiconductor device |
| CN111725102A (en) * | 2020-06-18 | 2020-09-29 | 北京北方华创微电子装备有限公司 | Furnace tube in semiconductor process equipment and semiconductor process equipment |
| CN112359343A (en) * | 2020-09-29 | 2021-02-12 | 北京北方华创微电子装备有限公司 | Gas inlet device of semiconductor process equipment and semiconductor process equipment |
| WO2022077942A1 (en) * | 2020-10-15 | 2022-04-21 | 长鑫存储技术有限公司 | Diffusion furnace |
| CN112941626A (en) * | 2021-01-22 | 2021-06-11 | 北京北方华创微电子装备有限公司 | Air inlet assembly and air inlet device of process chamber and semiconductor processing equipment |
| CN114481311A (en) * | 2021-12-24 | 2022-05-13 | 北京北方华创微电子装备有限公司 | Gas inlet module of semiconductor process equipment and semiconductor process equipment |
Also Published As
| Publication number | Publication date |
|---|---|
| CN115074701A (en) | 2022-09-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US20200149166A1 (en) | Flow control features of cvd chambers | |
| US10590530B2 (en) | Gas control in process chamber | |
| TWI722871B (en) | Lid and lid assembly kit for substrate processing chamber | |
| TWI830183B (en) | Plasma processing apparatus comprising symmetric plasma process chamber and lid assembly for the same | |
| CN101133186B (en) | Self-cooling gas delivery apparatus under high vacuum for high density plasma applications | |
| CN104250728A (en) | Chemical deposition chamber having gas seal | |
| US20130306758A1 (en) | Precursor distribution features for improved deposition uniformity | |
| US11492705B2 (en) | Isolator apparatus and methods for substrate processing chambers | |
| US11078568B2 (en) | Pumping apparatus and method for substrate processing chambers | |
| CN111108228A (en) | Substrate processing chamber with improved process space sealing | |
| CN103903946B (en) | A kind of gas spray for plasma reactor | |
| US11598004B2 (en) | Lid assembly apparatus and methods for substrate processing chambers | |
| CN115074701B (en) | Air inlet device of semiconductor process equipment and semiconductor process equipment | |
| US20190169743A1 (en) | Advanced coating method and materials to prevent hdp-cvd chamber arcing | |
| US11222771B2 (en) | Chemical control features in wafer process equipment | |
| WO2022221025A1 (en) | Improved isolator for processing chambers | |
| KR102210390B1 (en) | Integration of dual remote plasmas sources for flowable cvd | |
| WO2020027980A1 (en) | Gas box for cvd chamber | |
| TWI814291B (en) | Uniform in situ cleaning and deposition | |
| JP2023546409A (en) | Gas mixer that enables RPS purge | |
| KR102661401B1 (en) | Atomic layer deposition chamber with thermal lid |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |