WO2015096820A1

WO2015096820A1 - Process chamber and semiconductor processing apparatus

Info

Publication number: WO2015096820A1
Application number: PCT/CN2014/095339
Authority: WO
Inventors: 吕峰; 张风港; 赵梦欣; 丁培军; 李冬冬; 文莉辉
Original assignee: 北京北方微电子基地设备工艺研究中心有限责任公司
Priority date: 2013-12-29
Filing date: 2014-12-29
Publication date: 2015-07-02
Also published as: CN104752275A; CN104752275B; TW201526148A; TWI606542B; KR101919674B1; KR20160088427A

Abstract

Provided in the present invention are a process chamber and a semiconductor processing apparatus. The process chamber comprises at least two reaction compartments, at least two sets of mutually independent air intake systems, and a chip transfer apparatus. The at least two reaction compartments are arranged within the process chamber and are distributed evenly in the circumferential direction thereof, and each reaction chamber constitutes therein an independent process environment. The air intake systems deliver in a one-to-one correspondence a process gas to the reaction compartments. The chip transfer apparatus is used for transferring chips into the reaction compartments. The process chamber and the semiconductor processing apparatus provided in the present invention allow for two or more processes to be carried out simultaneously in a single process chamber, thus not only is the process chamber structurally compact and small in footprint, but also obviated is the need to redesign the structure of a transfer chamber, thus allowing for reduced costs for manufacturing the apparatus.

Description

Process chamber and semiconductor processing equipment

Technical field

The present invention relates to the field of semiconductor device manufacturing, and in particular to a process chamber and a semiconductor processing apparatus.

Background technique

The basic principle of Physical Vapor Deposition (PVD) is to evaporate a metal, metal alloy or compound under vacuum and deposit it on the surface of the substrate to form a film with special functions. The main methods of physical vapor deposition include vacuum evaporation, plasma sputtering coating, arc plasma coating, ion plating, and molecular beam epitaxy. Among them, plasma sputter coating is currently the most representative and widely used physical vapor deposition technology. When a semiconductor wafer is deposited (coated) by a plasma sputtering technique, the process chamber is usually a vacuum environment, and a process gas is supplied to the process chamber and excited to form a plasma, and the plasma bombards the target. The sputtered target material is deposited on the surface of the wafer to form the film required for the process.

The process chamber as the "factory" for film preparation is the core of PVD equipment, and other systems for transmission, degassing, pre-cleaning, etc. are all service chambers. FIG. 1 is a schematic diagram of a whole machine of a conventional PVD device. As shown in Figure 1, the PVD device includes two loading ports 1, a front end chamber (EMEF) 2, two loading chambers (Load Lork) 3, a transfer chamber (TM) 4, and a A gas chamber (Degas) 5, a pre-cleaning chamber (Preclean) 6 and two process chambers (PM) 7. The workflow of the PVD apparatus is that a robot in the front end chamber 2 (not shown) transfers the wafer on the loading and unloading station 1 into the loading and unloading chamber 3; the robot in the transport chamber 4 (Scara Robot) 8 will The wafer in the loading and unloading chamber 3 is transferred to the degassing chamber 5 to remove moisture from the wafer; the degassed wafer is then transferred by the robot 8 to the pre-cleaning chamber 6 for cleaning to remove residues of oxides on the surface thereof. Material; cleaned crystal The sheet is then sequentially transferred by the robot 8 to the two

process chambers

71 and 72 for sputter coating; the wafer after completion of the coating is sent back to the loading and unloading chamber 3 by the robot 8 and returned to the loading and unloading by the robot in the front end chamber 2. On stage 1, to complete the entire workflow.

The above PVD devices inevitably have the following problems in practical applications:

First, in the above PVD device, a single process chamber (71 or 72) can only perform one process on the wafer in a single operation, that is, only one film layer can be deposited on the wafer in a single time. To perform more than two processes at the same time, it is necessary to increase the number of process chambers. In order to achieve the docking between all process chambers and the transfer chamber, it is necessary to redesign the structure of the transfer chamber. The number of transfer ports is matched to the number of process chambers, and the space around it can accommodate individual process chambers, resulting in increased manufacturing costs.

Second, since the plurality of process chambers are independent of each other and are arranged radially around the transfer chamber, the arrangement takes up a large space and is particularly noticeable when the number of process chambers is large. The overall volume of the PVD device will be increased.

Summary of the invention

The present invention aims to at least solve one of the technical problems existing in the prior art, and proposes a process chamber and a semiconductor processing apparatus, wherein a single process chamber can simultaneously perform two or more processes, thereby not only the structure of the process chamber Compact, small footprint, and no need to redesign the structure of the transfer chamber, reducing equipment manufacturing costs.

To achieve the object of the present invention, there is provided a process chamber comprising at least two reaction chambers, a wafer transfer device and at least two sets of mutually independent intake systems, wherein the at least two reaction chambers are disposed in the process The interior of the chamber is evenly distributed along the circumferential direction of the process chamber, and each reaction chamber constitutes an independent process environment; the air intake system is in communication with the reaction chamber in one-to-one correspondence, and is used for The reaction chamber transports process gases; the wafer transfer device is used to transport wafers into the reaction chamber.

Wherein the wafer transfer device comprises a rotating base, a lifting base and a thimble device, Medium: the rotating base is disposed below the at least two reaction chambers, and a plurality of carrying positions for carrying the wafer are disposed on the rotating base, the plurality of carrying positions along the rotating base The circumferential direction of the disk is evenly distributed, and the rotating base plate is rotated by rotation so that each of the reaction chambers corresponds to one of the carrying positions, and is disposed on the rotating base plate at a position of each carrying position a through hole; the lifting bases are disposed in a one-to-one correspondence under the reaction cabin; each lifting base passes through a lifting movement and passes through a corresponding carrying position and rises to the corresponding reaction Navigating the reaction chamber or descending below the rotating base; a film opening is provided on a side wall of the process chamber for moving the wafer into or out of the process chamber; the thimble device Provided at a position opposite to the film opening in the process chamber; the thimble device passes through the lifting position with its top end penetrating through the carrying position and reaching above or below the rotating base position.

Wherein the number of the carrying positions is equal to the number of the reaction chambers or an integral multiple of the number of the reaction chambers.

Wherein the wafer transfer device includes a robot and a lifting base, wherein: the number of the lifting bases corresponds to the number of the reaction chambers, and the lifting bases are disposed one by one below the reaction chamber Each lifting base can be raised into a corresponding one of the reaction chambers to close the reaction chamber or to move out of the reaction chamber corresponding thereto; the robot is used to transfer the wafer to the lifting base .

Wherein a film opening is provided on a sidewall of the process chamber for moving the wafer into or out of the process chamber; the wafer transfer device further includes a thimble device, and the thimble device can be set for lifting movement At a position opposite the transfer opening in the process chamber; the robot is used to transfer a wafer between the thimble device and any one of the lift bases, and between any two lift bases.

Wherein, each of the lifting bases is further provided with a wafer carrier, the wafer carrier includes a support ring and at least three support pins, wherein: the support ring is disposed around the periphery of the lifting base, and The lifting base is fixed relative to the lifting base during the lifting movement; Three support pins are fixed on the support ring and uniformly distributed along a circumferential direction of the lift base, and a top end height of the at least three support pins is at a preset lowest position when the lift base is Higher than the height of the upper surface of the lifting base.

Wherein, the reaction chamber is provided with a fluent chamber, the shimming chamber is connected to the air intake system, and the shimming chamber has a plurality of air outlets, and is evenly distributed along the circumferential direction of the shimming chamber, And used to transport the process gas in the flow mixing chamber into the reaction chamber.

Wherein the backing ring assembly is further disposed in the reaction chamber, the backing ring assembly includes an upper ring body and a lower ring body, the upper ring body is located inside the lower ring body, and the upper ring body is And an annular gap between the lower ring body; an annular passage formed along a circumferential direction thereof is formed inside the side wall of the reaction chamber, the annular passage serving as the flow uniform chamber; in the reaction chamber A plurality of radial through holes serving as the air outlets are uniformly distributed on the inner side wall and along the circumferential direction thereof, and the radial through holes communicate with the annular passage and the annular gap, respectively.

Wherein each of the lifting bases cooperates to facilitate each of the lifting bases simultaneously rising into each of the reaction chambers before the process, at least one of the respective reaction chambers being selectively reacted as a process The cabins; and after all of the process chambers of the process have completed their respective processes, each of the lift bases simultaneously descends below the rotating base.

Wherein, the wafer transfer device further includes a return-to-zero sensor detection bit, a positioning sensor detection bit, a zero-return sensor, and a positioning sensor, wherein: the return-to-zero sensor detection bit is disposed on an outer peripheral wall of the rotating base plate, and is located a position corresponding to a preset origin position; the return-to-zero sensor is configured to detect an origin position of the rotating base by identifying the return-to-zero sensor when the rotating base rotates; The number of sensor detection bits corresponds to the number of the bearing positions, the positioning sensor detection bits are disposed on the outer peripheral wall of the rotating base plate, and are located at a position corresponding to the bearing position; the positioning The sensor is configured to detect the position of each load bearing position by identifying each of the positioning sensor detection bits as the rotating base disk rotates.

Wherein a pressure ring is further disposed in the reaction chamber, and the pressure ring is used in the lifting base When the seat is raised into the reaction chamber, the wafer is fixed on the lifting base by its own gravity; and the lower ring body is further used to support the lifting base when the lifting base is removed from the reaction cabin. Pressure ring.

Wherein, a top opening mechanism is provided at the top of the reaction chamber for opening or closing the top opening of the reaction chamber.

Wherein the opening mechanism comprises an upper electrode chamber, the upper electrode chamber comprising: a target disposed at a bottom of the upper electrode chamber; disposed in the upper electrode chamber and located at the target a magnetron above; and a magnetron drive mechanism for driving the magnetron to rotate relative to the surface of the target.

The magnetron driving mechanism includes: a rotary transmission mechanism having a large timing pulley, a small timing pulley, and a timing belt; and a magnetron rotating motor for driving the magnetron relative to the chassis by the rotation transmission mechanism The surface of the target is rotated; the commutating reducer is used to reduce the rotational speed of the rotating magnet of the magnetron.

The wafer transfer device further includes an elevation drive mechanism, and the number of the lift drive mechanisms corresponds to the number of the lift bases for driving the lift bases in a one-to-one correspondence for lifting movement.

Wherein the diameter of the through hole is smaller than the diameter of the wafer; or the diameter of the through hole is greater than or equal to the diameter of the wafer, and a support portion is disposed in each through hole for supporting the through hole The wafer within the hole.

Wherein the wafer transfer device further comprises a rotary drive mechanism for driving the rotary base for rotational movement. The rotary drive mechanism includes: a magnetic fluid bearing disposed at a central position within the process chamber and coupled to the rotary base; and a rotary electric machine for driving the rotary base by the magnetic fluid bearing Rotating around the center of the process chamber.

As another technical solution, the present invention further provides a semiconductor processing apparatus comprising: a process chamber for processing a wafer; a degassing chamber for removing moisture on the wafer; and a pre-cleaning chamber for removing a residue on the surface of the wafer; a transfer chamber, respectively a process chamber, the degassing chamber and the pre-cleaning chamber are connected, and a robot is disposed therein for respectively transferring the wafers into the respective chambers; the process chamber adopting the above-mentioned provided by the present invention Process chamber.

Wherein the number of the process chambers is one or more, and the plurality of process chambers are distributed along the circumferential direction of the transfer chamber.

Wherein, the semiconductor processing apparatus comprises a physical vapor deposition apparatus.

The invention has the following beneficial effects:

The invention provides a process chamber in which at least two reaction chambers uniformly distributed along the circumferential direction thereof are disposed, and each reaction chamber constitutes an independent process environment, and is respectively conveyed to the reaction chamber by the air intake system in one-to-one correspondence The process gas is transferred to the reaction chamber using a wafer transfer device. In this way, two or more processes can be simultaneously performed by using at least two reaction chambers in a single process chamber, thereby eliminating the need to increase the number of process chambers and eliminating the need to redesign the structure of the transfer chamber, thereby reducing the equipment. manufacturing cost. Furthermore, since at least two reaction chambers are evenly distributed along the circumferential direction of the process chamber, this makes the overall structure of the process chamber more compact and takes up less space than the prior art.

The semiconductor processing apparatus provided by the invention can perform two or more processes simultaneously by using at least two reaction chambers by using the process chamber provided by the invention, thereby eliminating the need to redesign the transmission chamber without increasing the number of process chambers. The structure of the chamber, in turn, can reduce the manufacturing cost of the equipment. In addition, since at least two reaction chambers are evenly distributed along the circumferential direction of the process chamber, this makes the overall structure of the process chamber more compact and takes up less space than the prior art.

DRAWINGS

1 is a schematic diagram of a whole machine of a conventional PVD device;

2A is a perspective view of a process chamber according to an embodiment of the present invention;

2B is a top plan view showing the internal structure of a process chamber according to an embodiment of the present invention;

2C is a perspective view of a wafer transfer device of a process chamber according to an embodiment of the present invention;

2D is a cross-sectional view of a process chamber according to an embodiment of the present invention;

3A is a partial cross-sectional view of a reaction chamber used in a process chamber according to an embodiment of the present invention;

Figure 3B is an enlarged view of the area II in Figure 3A;

Figure 3C is a cross-sectional view taken along line B-B of Figure 3A;

4A is a perspective view of an internal structure of a process chamber according to an embodiment of the present invention;

4B is a top plan view showing the internal structure of a process chamber according to an embodiment of the present invention;

5A is a schematic structural diagram of a semiconductor processing apparatus according to an embodiment of the present invention;

FIG. 5B is a schematic structural diagram of another semiconductor processing apparatus according to an embodiment of the present invention.

detailed description

In order to enable those skilled in the art to better understand the technical solutions of the present invention, the process chamber and the semiconductor processing apparatus provided by the present invention are described in detail below with reference to the accompanying drawings.

The invention provides a process chamber comprising at least two reaction chambers, at least two sets of intake systems and wafer transfer devices independent of each other. Wherein, at least two reaction chambers are disposed inside the process chamber and are evenly distributed along the circumferential direction thereof; each reaction chamber constitutes an independent process environment, so that a single process can be performed on the wafer; the air intake system is in one-to-one correspondence A process gas is delivered to the reaction chamber; a wafer transfer device is used to transport the wafer into the reaction chamber.

Since each reaction chamber constitutes an independent process environment, and the process gas is transported to the reaction chamber in a one-to-one correspondence by the intake system, and the wafer transfer device is used to transport the wafer into the reaction chamber, which utilizes at least a single process chamber Two reaction chambers can realize two or more processes at the same time, so that it is not necessary to increase the number of process chambers, that is, it can be increased simultaneously by increasing the number of reaction chambers without changing the number of process chambers. The number of processing steps eliminates the need to redesign the structure of the transfer chamber, which in turn reduces equipment Cause this. Furthermore, since at least two reaction chambers are evenly distributed along the circumferential direction of the process chamber, this makes the overall structure of the process chamber more compact and takes up less space than the prior art.

The wafer transfer device has a transfer function for transferring the wafer into the reaction chamber, the function comprising at least the following actions: that the wafer can be transferred to each reaction chamber simultaneously or sequentially; or alternatively, the wafer can be selectively transferred to all reactions At least one reaction chamber in the tank. The specific flow of the action is: first, the unprocessed wafer is transferred to the wafer transfer device in the process chamber by a robot located outside the process chamber; then the unprocessed wafer is transferred to the reaction chamber by the wafer transfer device. .

Preferably, the wafer transfer device can also be used to transfer wafers between the various reaction chambers. For example, different processes are performed for each reaction chamber. After the wafer is completed in one of the reaction chambers, the wafer can be transferred by means of a wafer transfer device. Transfer to the reaction chamber where the next process is located.

With the above wafer transfer device, different transfer modes can be selected according to different processes, process sequences, etc., thereby not only improving the flexibility of the process, but also expanding the application range.

Specific embodiments of the process chamber provided by the present invention are described in detail below.

Embodiment 1

Referring to FIG. 2A to FIG. 2E together, the process chamber 10 provided in this embodiment includes four reaction chambers, four sets of independent air intake systems and wafer transfer devices. Among them, four reaction chambers are: reaction chamber 12A, reaction chamber 12B, reaction chamber 12C and reaction chamber 12D. As shown in FIG. 2A, four reaction chambers are disposed inside the process chamber 10 and are evenly distributed along the circumference thereof. Distributed, and each reaction chamber constitutes an independent process environment, and uses four sets of air intake systems (not shown) to transfer process gases to the four reaction chambers in a one-to-one correspondence, and utilizes the above-described transmission function of the wafer transfer device Therefore, it is possible to realize two or more processes simultaneously in a single process chamber.

In this embodiment, the structure of the wafer transfer device is specifically: it includes a rotating substrate 14 Lifting base and thimble device 15. Wherein, the rotating base 14 is disposed under the four reaction chambers, and eight carrying positions (141-148) for carrying the wafer 16 are disposed on the rotating base 14, and eight carrying positions (141-148) are provided along the rotating base 14 The circumferential direction of the rotating base 14 is evenly distributed as shown in Fig. 2C. The so-called carrying position refers to an area for placing a wafer divided on the upper surface of the rotating base.

The rotating base plate 14 is rotated about its axial centerline so that each of the reaction chambers corresponds to a load bearing position. Since there are eight bearing positions on the rotating base 14, that is, the number of carrying positions is twice the number of reaction chambers, in this case, the rotating base 14 is made up of eight carrying positions after each predetermined angle of rotation. The four non-adjacent bearing positions are located one by one correspondingly below the four reaction chambers, that is, the carrying

positions

142, 144, 146 and 148 shown in FIG. 2C; the remaining four non-adjacent carrying positions are one by one. Correspondingly located at the interval between each adjacent two reaction chambers, i.e., the

load levels

141, 143, 145 and 147 shown in Figure 2C. That is to say, the rotating base plate 14 is rotated so that the eight load positions are placed in two batches directly below the four reaction chambers.

Of course, in practical applications, the number of carrying positions can also be equal to the number of reaction chambers, or more than twice the number of reaction chambers. Moreover, in the latter case, as long as the rotating base plate 14 is placed in multiples in multiples, the bearing position is placed directly below the four reaction chambers.

In the present embodiment, four lifting pedestals (13A-13D) are disposed in the process chamber 10, and four lifting pedestals are disposed one by one below the four reaction chambers, as shown in Fig. 2B. After the rotating base plate 14 is rotated by a preset angle, and each of the reaction chambers corresponds to a load bearing position, each lifting base passes through the lifting movement, and passes through the corresponding carrying position, and rises to corresponding The reaction chamber is either lowered below the rotating substrate 14 so that the wafer on the carrying position can be transferred into the reaction chamber by ascending, and the wafer in the reaction chamber can be transferred to the lower portion of the rotating substrate 14 On the carrying position.

It should be noted that the bottom of each reaction chamber is open, and after the lifting base is raised into the reaction chamber, the bottom of the reaction chamber can be closed, so that the interior of the reaction chamber forms a relatively independent process environment, that is, each Between the reaction chamber and the process chamber 10, and other reactions The compartments are isolated from each other.

In this embodiment, each of the lifting bases cooperates so that each lifting base is simultaneously raised into each reaction chamber before the process, and at least one of the respective reaction chambers is selectively used as a reaction chamber for implementing the process; After the respective process chambers of the process are completed, the respective lifting bases are simultaneously lowered below the rotating base. The flow of transferring the wafer by using the rotating base 14 and the lifting base is specifically: first, the rotating base 14 is stopped after rotating the preset angle so that the lower sides of the four reaction chambers correspond to one carrying position; then, the rotating base is located The four lifting pedestals below 14 are simultaneously raised, and the four wafers on the four carrying positions are lifted up and then transferred one by one to the four reaction chambers. After the processing of the wafers is completed in each of the reaction chambers, the four lifting pedestals are simultaneously lowered below the rotating substrate 14, during which the finished wafer is re-transmitted to the carrying position of the rotating base 14. If the number of carrying positions is an integral multiple of the number of reaction chambers, the above procedure is repeated until all wafers on the rotating substrate 14 have been processed. Thus, by combining the rotational movement of the rotating base 14 with the lifting movement of the lifting base, it is possible to transfer the wafer into the reaction chamber and transfer the wafer between the various reaction chambers. It is easy to understand that when the rotating base 14 performs a rotary motion, the lifting base is located below the rotating base plate 14 and is stationary; when the rotating base plate 14 is rotated into position, the lifting base is moved up and down, and at this time, the rotating base 14 is rotated. It is stationary, so that the movement of the rotating base plate 14 and the lifting base does not interfere with each other.

It should be noted that, in practical applications, all reaction chambers can be operated simultaneously (for the same or different processes) according to specific needs, or at least one of the reaction chambers can be selectively operated while the remaining unselected reactions are performed. The cabin does not work. However, whether it is all reaction chamber work or partial reaction chamber work, each lifting base must be raised to each reaction chamber before the process, and each lifting base can complete its own process in each working reaction chamber, and then simultaneously It descends below the rotating base plate 14 to ensure that each reaction chamber can be isolated from other reaction chambers during operation.

In addition, the specific structure at each load bearing position on the rotating base plate 14 should satisfy two requirements. That is, not only can the wafer be carried, but also the lifting base can be traversed in the vertical direction (hereinafter referred to as vertical penetration). In the present embodiment, through holes are provided at positions corresponding to the respective load-bearing positions of the rotary base 14, the diameter of the through holes being larger than the diameter of the wafer 16, and a support portion is provided in each of the through holes, the support The portion is a plurality of support claws protruding from the hole wall of the through hole, and is distributed along the circumferential direction of the hole wall. The wafer 16 loaded onto the rotating substrate 14 is located in the through hole and is supported by a plurality of supporting claws. It is easy to understand that the outer diameter of the lifting base should be smaller than the inner diameter of the support ring formed by the plurality of supporting claws in the circumferential direction of the through hole. Of course, in practical applications, the support portion may be omitted and the diameter of the through hole is smaller than the diameter of the wafer. In this case, the wafer is supported by a portion of the upper surface of the rotating base plate near the periphery of the through hole, and the lift base is The outer diameter of the seat should be smaller than the diameter of the through hole, that is, the diameter of the through hole is smaller than the diameter of the wafer and larger than the diameter of the lifting base so as to be capable of carrying the wafer and allowing the lifting base to pass through in the vertical direction. The through hole.

In the present embodiment, the wafer transfer apparatus further includes a rotary drive mechanism for driving the rotary base plate 14 to rotate about its axial centerline. Specifically, as shown in FIG. 2D, the rotary drive mechanism includes a magnetic fluid bearing 181 and a rotary electric machine 183. Wherein, the magnetic fluid bearing 181 is disposed at a central position within the process chamber 10 and is coupled to the rotating base 14; the rotary electric machine 181 is configured to drive the magnetic fluid bearing 183 to rotate around the center of the process chamber 10 through the speed reducer 182, thereby The rotating base plate 14 is rotated. The magnetic fluid bearing 181 is a sliding bearing using a conductive fluid as a lubricant and having an external magnetic field. With the magnetic fluid bearing 181, the magnetic field generated by the magnetic fluid bearing 181 can block the movement of the fluid, thereby making the equivalent viscosity of the fluid. The multiplication increases, which in turn increases the bearing capacity of the bearing. Of course, in practical applications, any other structure of the rotary drive mechanism may be employed. The present invention has no limitation on the structure of the rotary drive mechanism as long as it can drive the rotary base plate 14 to rotate in a horizontal plane.

In addition, preferably, in order to accurately control and calibrate the rotation angle of the rotating base plate 14 to ensure that each of the bearing positions can be rotated into position, the wafer transfer apparatus further includes a return-to-zero sensor detecting bit 171, a positioning sensor detecting bit 172, and a zeroing sensor. (not shown in the figure) and Position sensor (not shown). Wherein, the return-to-zero sensor detecting position 171 is disposed at a position on the outer peripheral wall of the rotating base 14 corresponding to the preset origin position; the so-called origin position refers to the initial position when the rotating angle of the rotating base 14 is zero. . The return-to-zero sensor is used to detect the origin position of the rotary base 14 by recognizing the return-to-zero sensor 171 when the rotary base 14 is rotated. The number of positioning sensor detecting bits 172 corresponds to the number of carrying positions, and the positioning sensor detecting position 172 is disposed at a position on the outer peripheral wall of the rotating base plate one-to-one corresponding to the carrying position; the positioning sensor is used for the rotating base 14 When rotated, the position of each load bearing position is detected by identifying each of the positioning sensor detection bits 172. In practical applications, the zeroing sensor detection bit 171 and the positioning sensor detection bit 172 can be configured to be various forms that can be used for marking locations, such as bumps, grooves, or reticle.

In this embodiment, the wafer transfer apparatus further includes an elevating drive mechanism, the number of the elevating drive mechanisms corresponding to the number of the elevating bases, that is, the number of the elevating drive mechanisms is four, for driving the lift bases in one-to-one correspondence The seat is used for lifting and lowering. The structure of each lifting drive mechanism is specifically as follows: as shown in FIG. 2D, each lifting drive mechanism is disposed at the bottom of the process chamber 10, and includes a rotating electrical machine 215, a base lifting shaft 212, a linear bearing 211, and a linear transmission mechanism. Wherein, the linear bearing 211 is fixed at the bottom of the process chamber 10; the upper end of the pedestal lifting shaft 212 passes through the linear bearing 211 in a vertical direction (sliding fit), and extends into the process chamber 10 to be connected with the lifting base The rotary electric machine 215 is for providing rotational power; the linear drive mechanism is for converting the rotational power of the rotary electric machine 215 into linear power in the vertical direction and transmitting it to the base lift shaft 212. Specifically, the linear transmission mechanism includes a nut 213 and a lead screw 214, wherein the nut 213 is sleeved on the lead screw 214 and slidable along the lead screw 214, and the nut 213 is coupled to the lower end of the base lift shaft 212; the lead screw 214 The lower end of the base lift shaft 212 and the drive shaft of the rotary electric machine 215 are respectively connected.

Under the driving of the rotating electrical machine 215, the lead screw 214 performs a rotary motion to cause the nut 213 to move up and down, thereby driving the base lifting shaft 212 and the lifting base connected thereto to perform the lifting movement. Preferably, the lifting drive mechanism may further comprise guiding the base lifting shaft Linear guides used. Additionally, preferably, a bellows 216 may be sleeved over the base lift shaft 212 for sealing the gap between the base lift shaft 212 and the process chamber 10.

In practical applications, the lifting drive mechanism can also directly drive the base lifting shaft for lifting movement using a linear motor. Alternatively, any other structure of the lifting drive mechanism may be employed. The present invention has no limitation on the structure of the lifting drive mechanism as long as it has a function of driving the lifting base for lifting movement.

In the present embodiment, a film opening 11 is provided on the side wall of the process chamber 10 for moving the wafer into or out of the process chamber 10; the ejector device 15 is disposed in the process chamber 10 opposite to the film opening 11 The position is as shown in Figure 2B. The thimble device 15 is moved up and down so that its tip end penetrates the carrying position and reaches a position higher or lower than the rotating base 14.

The thimble device 15 is specifically configured to include at least three thimbles 151 and a thimble lifting mechanism 152 for driving at least three thimbles for simultaneous lifting movement. When it is desired to take the finished wafer out of the rotating substrate 14 and remove it from the process chamber 10, first, the rotating substrate 14 rotates the carrying position of the finished wafer to the top of at least three thimbles 151 (the thimble 151). The initial position is located below the rotating base plate 14), that is, rotated to a position opposite to the transfer opening 11; then, at least three thimbles 151 are raised by the ejector lift mechanism 152 until the top end thereof passes through the load position And reaching a position higher than the rotating base 14, during which at least three thimbles 151 lift the wafer on the carrying position to disengage the rotating base 14; the robot outside the process chamber 10 passes The wafer port 11 is moved into the process chamber 10, and the wafer 16 is taken out from the ejector pin 151, and then the wafer 16 is carried out of the process chamber 10, thereby completing the unloading of the wafer 16. The flow of loading the wafer to be processed to the rotating substrate 14 is similar to the above-described wafer unloading process, and only the order of motion is reversed, and thus will not be described again. It is easy to understand that the ejector device 15 is located below the rotating base plate 14 and is stationary when the rotating base plate 14 is rotated; the ejector device 15 is raised above the rotating base plate 15 after the load-bearing position to be loaded and unloaded is rotated into position. At the position, the rotating base plate 14 is stationary at this time, thereby ensuring that the movement of the rotating base plate 14 and the thimble device 15 does not interfere with each other.

The structure and intake mode of the intake system and the internal structure of the reaction cabin are described in detail below. Referring to Figures 3A through 3C together, only the specific structure of a single reaction chamber 12A is shown, while the remaining three reaction chambers 12B-12C have the same structure as the reaction chamber 12A. Specifically, each reaction chamber is provided with a flow mixing chamber connected to the air intake system and having a plurality of air outlets, and the plurality of air outlets are evenly distributed along the circumferential direction of the flow chamber for receiving air from the air inlet The process gas of the system is evenly delivered to the reaction chamber.

The structure of the ration chamber will be described in detail below. Specifically, as shown in FIG. 3B, a liner ring assembly is further provided in the reaction chamber 12A, the liner ring assembly includes a lower ring body 25 and an upper ring body 23, and the upper ring body 23 is located inside the lower ring body 25. The lower ring body 25 and the upper ring body 23 serve to protect the side walls of the reaction chamber to prevent contamination from adhering thereto. In practical applications, the lower ring body 25 and the upper ring body 23 are connected to the reaction chamber 12A in a detachable direction for convenient cleaning. It will be readily understood that the annular wall composed of the lower ring body 25 and the upper ring body 23 should be able to cover the side wall surface of the entire reaction chamber 12A.

In the present embodiment, an annular passage 244 is formed inside the side wall of the reaction chamber 12A in a circumferential direction thereof, the annular passage 244 serving as a flow-through chamber and connected to the intake system, and on the inner side wall of the reaction chamber 12A. And a plurality of radial through holes 245 for making air ports are uniformly distributed along the circumferential direction thereof, and the radial through holes 245 are respectively connected to the inner portions of the annular passage 244 and the reaction chamber 12A, that is, outside the radial through holes 245 The end (the right end of the radial through hole 245 shown in Fig. 3B) is connected to the annular passage 244; the inner end of the radial through hole 245 is located on the inner side wall of the reaction chamber 12A. As can be seen from the above, the above-mentioned vortex chamber (i.e., the annular passage 244) is embedded inside the side wall of the reaction chamber 12A, which not only simplifies the structure of the apparatus, but also facilitates processing and installation.

The intake system includes an intake passage 243 formed in the side wall 24 of the reaction chamber 12A, the outlet end of the intake passage 243 is connected to the annular passage 244; the intake end of the intake passage 241 is located on the upper surface of the reaction chamber, and It is connected to a joint 242 of a gas path (not shown).

When the reaction chamber 12A is in operation, the process gas first enters the annular passage 244 serving as a flow chamber through the intake passage 243 and diffuses to the periphery until it fills the annular passage 244, and then Each of the radial through holes 245 uniformly flows into the annular gap 272 and finally flows into the reaction chamber 12A. Thereby, the gas path of the intake system can directly transport the process gas into the reaction chamber 12A through the intake passage 243 and the doubling chamber, which not only shortens the flow time of the process gas reaching the inside of the reaction chamber 12A, but also can be more accurate. The flow rate of the process gas involved in the process is controlled to facilitate the process results. Furthermore, since the size of the reaction chamber 12A is small relative to the process chamber 10, this allows the process gas flowing directly into the reaction chamber 12A to be more evenly distributed, thereby improving process uniformity. In addition, by arranging the intake end of the intake passage 243 on the upper surface of the reaction chamber 12A, this can save space around the reaction chamber 12A, thereby not only making the structure of the process chamber 10 more compact, but also facilitating components such as gas pipes. Loading and unloading.

In the present embodiment, a pressure ring 26 is also disposed in the reaction chamber 12A for lifting the lift base 13A into the reaction chamber 12A, and fixing the wafer by its own gravity when the position E is as shown in FIG. 3A. On the lift base 13A, the lift base 13A and the pressure ring 26 collectively close the bottom opening of the reaction chamber 12A, thereby allowing the reaction chamber 12A to form a relatively independent process environment. Further, when the lifting base 13A is lowered and removed from the reaction chamber 12A, the pressure ring 26 is supported by the lower ring body 25. Specifically, the lower end of the lower ring body 25 has a bent portion 252 for supporting the pressure ring 26, the curved portion When the lifting base 13A is at the position E, its top end is lower than the portion where the bottom of the pressure ring 26 is supported; and when the lifting base 13A is moved out of the reaction chamber 12A, the pressure ring 26 is automatically dropped to the top end of the curved portion 252.

Preferably, a capping mechanism is provided at the top of each reaction chamber for opening or closing the top opening of the reaction chamber to facilitate independent maintenance and maintenance of the internal components of each reaction chamber. In the present embodiment, as shown in FIG. 2D, each opening mechanism includes an upper electrode chamber 221 disposed at the top of the reaction chamber, and an insulating ring is disposed between the upper electrode chamber 221 and the reaction chamber. In order to electrically insulate the two, the insulating ring can be made of an insulating material such as ceramics or glass.

Preferably, the opening mechanism further comprises a cover driving device 19 for driving the upper electrode chamber 221 is a flipping motion, i.e., snapping the upper electrode chamber 221 to the top of the reaction chamber to close the top opening of the reaction chamber; or flipping outward from the top of the reaction chamber to open the top opening of the reaction chamber. The cover drive unit 19 can be driven pneumatically or hydraulically. The present invention is not limited to the structure of the opening cover driving device 19 as long as its structure can achieve the above functions. In addition, in practical applications, the cover driving device 19 can also be omitted, and the upper electrode chamber can be driven in a manual manner for the flipping motion.

The structure of the upper electrode chamber 221 will be described in detail below. Specifically, it includes a target 20 disposed at the bottom of the upper electrode chamber 221, that is, when the upper electrode chamber 221 is snapped over the top of the reaction chamber, the target 20 is located inside the reaction chamber. Moreover, the upper electrode chamber 221 further includes a magnetron 222 disposed above the target 20 disposed in the upper electrode chamber 221, and a magnetron for driving the rotational movement of the magnetron 222 relative to the surface of the target Drive mechanism.

In the embodiment, the structure of the magnetron driving mechanism is specifically: it includes a rotation transmission mechanism, a magnetron rotating motor 225, and a ring reducer (not shown). Wherein, the rotary transmission mechanism is composed of a large timing pulley 224, a small timing pulley 227 and a timing belt 226 for transmitting rotational power by means of a timing belt; the magnetron rotating motor 225 is used for driving the magnetic control through the rotary transmission mechanism The tube 222 is rotationally moved relative to the surface of the target 20; the reverse speed reducer is used to reduce the rotational speed of the magnetron rotating electrical machine 225. Of course, in practical applications, any other structure of the magnetron driving mechanism can be used as long as it can drive the magnetron to rotate relative to the surface of the target.

It should be noted that, in the present embodiment, the number of reaction chambers is four, but the present invention is not limited thereto. In practical applications, the number of reaction chambers may also be two, three or more.

It should be noted that, in this embodiment, the carrying positions are all used to carry the wafer, but the present invention is not limited thereto. In practical applications, the carrying position may also have other functions, such as for placing a shielding disk (Disk) )and many more.

Embodiment 2

Compared with the above-mentioned first embodiment, the difference between this embodiment is only that the structure of the wafer transfer device is different. Other structures and functions of the process chamber provided in this embodiment are described in detail in the first embodiment, and are not described herein again. Only the structure of the wafer transfer apparatus provided in the present embodiment will be described in detail below.

Specifically, FIG. 4A is a perspective view of an internal structure of a process chamber according to Embodiment 2 of the present invention. 4B is a top plan view showing the internal structure of a process chamber according to Embodiment 2 of the present invention. Referring to FIGS. 4A and 4B together, the wafer transfer apparatus includes a robot 31, a lift base 13, and a ejector unit 15. The number of the lifting bases 13 is the same as the number of the reaction chambers. The structure and function of the lifting base 13 are the same as those of the lifting base in the first embodiment, that is, the number of lifting bases is the same as the number of reaction chambers. Correspondingly, the lifting bases are arranged one below the other in the reaction cabin; by lifting and lowering each lifting base, it can be raised to the corresponding reaction cabin or the corresponding reaction cabin The inside drops below the reaction chamber.

The ejector device 15 is disposed at a position opposite to the film opening 11 in the process chamber 10 for lifting movement. The structure of the thimble device 15 is the same as that of the ejector device of the first embodiment, that is, includes at least three thimbles 151. And a thimble lifting mechanism 152 for driving the at least three thimbles in synchronization for lifting movement. When it is necessary to load the wafer 16 into the process chamber 10, the robot outside the process chamber 10 is moved into the process chamber 10 via the transfer port 11; the ejector lift mechanism 152 drives at least three thimbles 151 to rise to lift the wafer 16; The robot outside the process chamber 10 is then removed from the process chamber 10.

The robot 31 is used to transfer the wafer between the thimble device 15 and any one of the lifting pedestals 13, and between any two lifting pedestals 13. Specifically, as shown in FIG. 4B, the robot 31 is rotatably disposed at a central position within the process chamber 10, and is located between the reaction chamber and the lifting base 13 at a preset minimum position, which is easy to understand, ascend and descend. When the susceptor 13 is in the lowest position, the wafer 16 is loaded or unloaded. In the present embodiment, the robot 31 employs a wafer carrying portion, three links, and two such that the three can be relatively rotated in the horizontal plane in sequence. The rotating pair is configured such that the robot 31 can expand and contract in a horizontal plane. In addition, the robot 31 can also perform a lifting motion in the vertical direction. Thereby, the robot 31 realizes the transfer of the unprocessed wafer into the reaction chamber by combining the rotary motion in the horizontal plane, the telescopic movement, and the vertical movement in the vertical direction; and, for each reaction chamber in which different processes are performed After the wafer completes the current process in one of the reaction chambers, the wafer can be transferred from the lifting base 13 corresponding to the current process to the lifting base 13 corresponding to the next process by the robot 31.

In addition, in order to cooperate with the robot 31 to take a sheet or release from each of the lifting bases 31, a wafer carrier is further disposed on each of the lifting bases 13, the wafer carrier including a support ring 322 and at least three support pins The support ring 322 is disposed around the periphery of the lifting base 13 and is fixed relative to the lifting base 13 during the lifting movement, that is, the support ring 322 does not rise or fall with the lifting base 13; at least three The support pins 321 are fixed on the support ring 322 and are evenly distributed along the circumferential direction of the lift base 13, and the top end heights of the at least three support pins 321 are higher than the lift base when the lift base 13 is at the preset lowest position. The upper surface height of 13 and the height of the top end of at least three support pins 321 are higher than the height of the wafer carrier of the robot 31.

When the robot 31 is released from any one of the lifting bases 31, the lifting base 13 is at a preset lowest position at this time; the robot 31 carrying the wafer 16 is subjected to telescopic movement and rotational movement in a horizontal plane to make the wafer The carrier portion is moved over the top end of at least three support pins 321 located at the lifting base 31; the robot 31 is lowered to transfer the wafer 16 from the wafer carrying portion to the at least three support pins 321; The holder 31 is raised to transfer the wafer 16 from the at least three support pins 321 to the lifting base 16, thereby completing the releasing operation of the robot 31 to any one of the lifting bases 31.

When the robot 31 takes a sheet from any of the lifting bases 31, the lifting base 13 carrying the wafer 16 at this time is lowered to a preset lowest position, and the wafer 16 is transferred to at least three supporting pins 321 during the lowering process. The top end of the robot 31 moves its wafer carrying portion to the top end of the supporting pin 321 by performing a telescopic movement and a rotational movement in a horizontal plane. Below the wafer 16, the robot 31 is raised to transfer the wafer 16 from the at least three support pins 321 to the wafer carrier, thereby completing the take-up operation of the robot 31 to any of the lift bases 31.

Therefore, the wafer transfer apparatus in this embodiment can replace at least the rotating base and the thimble apparatus in the first embodiment by providing the robot 31 in the process chamber to realize at least the following transmission actions, that is, simultaneously or sequentially The wafers are transferred to individual reaction chambers; alternatively, the wafers can be selectively transferred to at least one of the reaction chambers; and the wafers can be transferred between the various reaction chambers.

The manipulator 31 can not only transfer the wafer more flexibly, but also perform different processes in each reaction chamber, and if the process time taken by the process is different, the wafer auto-transfer port 11 that has completed the process in advance can be removed from the process chamber. 10, without having to wait for all the wafers to complete the process and then removing the process chamber 10, thereby not only improving the process efficiency, but also further improving the flexibility of the process.

It should be noted that the structure of the robot 31 is not limited to the robot structure in the above embodiment of the present invention. In practical applications, any other structure of the robot may be used as long as it can be implemented in the ejector device and any one of the lifting bases. It is sufficient to transfer the wafer between any two lifting bases.

It should also be noted that in the present embodiment, by means of the ejector device 15 respectively cooperating with the robot outside the process chamber 10 and the robot 31 within the process chamber 10, the wafer is realized outside the process chamber 10. The robot is transferred between the robot and the robot 31 within the process chamber 10, but the invention is not limited thereto, and in practice, the thimble device 15, that is, the robot and the process outside the process chamber 10, may be omitted. The robot within the chamber 10 directly performs the wafer transfer operation. In this case, the structure of the robot within the process chamber 10 can be adaptively designed according to the specific situation.

FIG. 5A is a schematic structural diagram of a semiconductor processing apparatus according to an embodiment of the present invention. Referring to FIG. 5A, the semiconductor processing apparatus includes a process chamber 66, The air chamber 64, the pre-cleaning chamber 65, and the transfer chamber 63. Wherein, the process chamber 66 is used for processing the wafer; the degassing chamber 64 is for removing moisture on the wafer; the pre-cleaning chamber 65 is for removing residues on the surface of the wafer; and the transfer chamber 63 is respectively associated with the process chamber 66. The degassing chamber 64 is connected to the pre-cleaning chamber 65, and a robot 631 is disposed therein for transferring the wafers to the respective chambers.

In the present embodiment, the number of process chambers 66 is one, and the process chamber 66 employs the above-described process chambers provided by various embodiments of the present invention, specifically, four process chambers within the process chamber 66 ( 661A-661D) for processing wafers simultaneously.

In this embodiment, the semiconductor processing apparatus further includes two loading stages 62 for respectively carrying the unprocessed wafer and the processed wafer; and the transfer chambers 63 are respectively connected to the two loading stages 62 for self- The unprocessed wafer is taken out from one of the loading stages 62, and the finished wafer is transferred to the other of the stages 62.

In the present embodiment, since the semiconductor processing apparatus has four functional modules, namely, the process chamber 66, the degassing chamber 64, the pre-cleaning chamber 65, and the loading table 62, the transfer chamber 63 can be designed as a tetragonal body. And the four sides of the quadrilateral are docked in one-to-one correspondence with the four functional modules. It can be seen that without increasing the number of process chambers 66, that is, without increasing the number of functional modules, even if the number of reaction chambers is increased or decreased, the interface between the process chamber 66 and the transfer chamber 63 is not affected. (Under the conditions allowed by the space around the transfer chamber 63), if the number of processes for simultaneous processing is increased only by increasing the number of reaction chambers, it is not necessary to redesign the structure of the transfer chamber 63, thereby reducing the manufacturing of the apparatus. cost.

It should be noted that, in the present embodiment, the number of the process chambers 66 is one, but the present invention is not limited thereto. In practical applications, the number of process chambers may be set to two or more. Moreover, a plurality of process chambers are distributed along the circumference of the transfer chamber. For example, as shown in FIG. 5B, the semiconductor processing apparatus has two process chambers (711, 712), that is, a process chamber is added to the semiconductor processing apparatus shown in FIG. 5A, and the remaining functional modules are the same. . In this case, since the number of function modules is increased to five, the transmission can be performed. The chamber 63 is designed as a cuboid, and the five sides of the cuboid are in one-to-one correspondence with the five functional modules.

In practical applications, the semiconductor processing apparatus may include a physical vapor deposition apparatus.

The semiconductor processing apparatus provided by the embodiments of the present invention can perform two or more processes simultaneously by using at least two reaction chambers by using the process chamber provided by the above various embodiments of the present invention, thereby eliminating the need to increase the number of process chambers. There is no need to redesign the structure of the transfer chamber, which in turn reduces the manufacturing cost of the device. In addition, since at least two reaction chambers are evenly distributed along the circumferential direction of the process chamber, this makes the overall structure of the process chamber more compact and takes up less space than the prior art.

It is to be understood that the above embodiments are merely exemplary embodiments employed to explain the principles of the invention, but the invention is not limited thereto. Various modifications and improvements can be made by those skilled in the art without departing from the spirit and scope of the invention. These modifications and improvements are also considered to be within the scope of the invention.

Claims

A process chamber comprising at least two reaction chambers, a wafer transfer device and at least two sets of mutually independent intake systems, wherein

The at least two reaction chambers are disposed inside the process chamber and are evenly distributed along the circumferential direction of the process chamber, and each reaction chamber constitutes an independent process environment;

The air intake system is in communication with the reaction cabin in a one-to-one correspondence, and is configured to transport a process gas to the reaction cabin;

The wafer transfer device is used to transfer wafers into the reaction chamber.
The process chamber of claim 1 wherein said wafer transfer device comprises a rotating base, a lifting base and a thimble device, wherein

The rotating base is disposed below the at least two reaction chambers, and a plurality of carrying positions for carrying the wafer are disposed on the rotating base, the plurality of carrying positions along the rotating base The circumferential direction is evenly distributed, and the rotating base plate is rotated, so that each of the reaction chambers corresponds to one of the carrying positions, and the rotating base plate is disposed at a position of each carrying position. hole;

The lifting bases are disposed in a one-to-one correspondence under the reaction cabin; each lifting base passes through a lifting position corresponding to the carrying position and rises to the corresponding reaction cabin to close The reaction chamber is either lowered below the rotating base;

Providing a film opening on a sidewall of the process chamber for moving the wafer into or out of the process chamber; the thimble device being disposed at a position opposite to the film opening in the process chamber; The ejector device passes its lifting movement such that its top end passes through the carrying position and reaches a position above or below the rotating base.
The process chamber of claim 2 wherein said number of load stations is equal to the number of said reaction chambers or an integer multiple of said reaction chambers.
The process chamber of claim 1 wherein said wafer transfer device comprises a robot and a lifting base, wherein

The number of the lifting bases corresponds to the number of the reaction chambers, and the lifting bases are disposed correspondingly below the reaction chambers; each lifting base can be raised into the corresponding reaction cabin Closing the reaction chamber or removing the reaction chamber corresponding thereto;

The robot is used to transfer a wafer onto the lifting base.
The process chamber according to claim 4, wherein a film opening is provided on a sidewall of the process chamber for moving the wafer into or out of the process chamber;

The wafer transfer device further includes a ejector device, wherein the ejector device is disposed at a position opposite to the film opening in the process chamber for lifting movement;

The robot is used to transfer wafers between the thimble device and any of the lifting pedestals, and between any two lifting pedestals.
The process chamber according to claim 4 or 5, wherein each of the lifting bases is further provided with a wafer carrier, the wafer carrier comprising a support ring and at least three support pins, wherein

The support ring is disposed around the periphery of the lifting base, and is fixed relative to the lifting base when the lifting and lowering movement is performed;

The at least three support pins are fixed on the support ring and uniformly distributed along a circumferential direction of the lifting base, and a top height of the at least three support pins is at a preset minimum at the lifting base In position, it is higher than the height of the upper surface of the lifting base.
The process chamber according to claim 2 or 4, wherein the reaction chamber is provided with a flow chamber, the flow chamber being connected to the intake system, and

The flow mixing chamber has a plurality of air outlets and is evenly distributed along the circumferential direction of the flow mixing chamber for The process gas in the vortex chamber is delivered to the reaction chamber.
The process chamber of claim 7 wherein a lining ring assembly is further disposed within the reaction chamber, the backing ring assembly including an upper ring body and a lower ring body, the upper ring body being located An inner side of the lower ring body and an annular gap between the upper ring body and the lower ring body;

Forming an annular passage circumferentially around the side wall of the reaction chamber, the annular passage serving as the flow mixing chamber;

A plurality of radial through holes serving as the air outlets are uniformly distributed on the inner side wall of the reaction chamber and along the circumferential direction thereof, and the radial through holes communicate with the annular passage and the annular gap, respectively.
The process chamber of claim 2 wherein each of said lift bases cooperate to facilitate

Before the process, each of the lifting pedestals is simultaneously raised into each of the reaction chambers, at least one of the respective reaction chambers being selectively used as a reaction chamber for implementing the process;

After all of the process chambers of the process have completed their respective processes, each of the lift bases simultaneously descends below the rotating base.
The process chamber according to claim 2, wherein the wafer transfer device further comprises a zero return sensor detection bit, a position sensor detection bit, a zero return sensor, and a position sensor, wherein

The return-to-zero sensor detection bit is disposed on an outer peripheral wall of the rotating base and at a position corresponding to a preset origin position;

The return-to-zero sensor is configured to detect an origin position of the rotating base by identifying the return-to-zero sensor when the rotating base rotates;

The number of detection positions of the positioning sensor corresponds to the number of the bearing positions, and the positioning sensor detection position is disposed on an outer peripheral wall of the rotating base plate, and is located at a position corresponding to the bearing position;

The positioning sensor is configured to detect the position of each of the bearing positions by identifying the respective positioning sensor detection bits when the rotating base is rotated.
A process chamber according to claim 8 wherein a pressure ring is provided in said reaction chamber for utilizing itself when said lifting base rises into said reaction chamber Gravity fixes the wafer on the lifting base; and,

The lower ring body is also used to support the pressure ring when the lifting base moves out of the reaction chamber.
The process chamber of claim 1 wherein a top opening mechanism is provided at the top of the reaction chamber for opening or closing the top opening of the reaction chamber.
The process chamber of claim 12 wherein said opening mechanism comprises an upper electrode chamber, said upper electrode chamber comprising:

a target disposed at a bottom of the upper electrode chamber;

a magnetron disposed within the upper electrode chamber and above the target;

A magnetron drive mechanism for driving the magnetron to rotate relative to the surface of the target.
The process chamber of claim 13 wherein said magnetron drive mechanism comprises:

a rotary transmission mechanism having a large timing pulley, a small timing pulley and a timing belt;

a magnetron rotating electrical machine for driving a rotary motion of the magnetron relative to the surface of the target by the rotary transmission mechanism;

A reversing reducer for reducing the rotational speed of the magnetron rotating electrical machine.
A process chamber according to claim 2 or 4, wherein said wafer transfer device further comprises an elevating drive mechanism, the number of said elevating drive mechanisms being opposite to the number of elevating bases It should be used to drive the lifting base for lifting movement in one-to-one correspondence.
The process chamber of claim 2 wherein said through hole has a diameter smaller than a diameter of said wafer; or

The through hole has a diameter greater than or equal to the diameter of the wafer, and a support portion is disposed in each of the through holes for supporting the wafer located in the through hole.
A process chamber according to claim 2, wherein said wafer transfer device further comprises a rotary drive mechanism for driving said rotary base for rotational movement;

The rotary drive mechanism includes:

a magnetic fluid bearing disposed at a central location within the process chamber and coupled to the rotating base;

A rotating electrical machine for driving the rotating base to rotate about a center of the process chamber by the magnetic fluid bearing.
A semiconductor processing apparatus comprising: a process chamber for processing a wafer; a degassing chamber for removing moisture on the wafer; a pre-cleaning chamber for removing residue on the surface of the wafer; and a transfer chamber Separating from the process chamber, the degassing chamber and the pre-cleaning chamber, respectively, and having a robot inside thereof for respectively transferring the wafers into the respective chambers; The process chamber employs the process chamber of any of claims 1-17.
The semiconductor processing apparatus according to claim 18, wherein the number of the process chambers is one or more, and the plurality of process chambers are distributed along a circumference of the transfer chamber.
The semiconductor processing apparatus according to claim 18, wherein said semiconductor processing apparatus comprises a physical vapor deposition apparatus.