TWI750501B - Substrate processing apparatus and substrate processing method - Google Patents

Substrate processing apparatus and substrate processing method Download PDF

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TWI750501B
TWI750501B TW108130193A TW108130193A TWI750501B TW I750501 B TWI750501 B TW I750501B TW 108130193 A TW108130193 A TW 108130193A TW 108130193 A TW108130193 A TW 108130193A TW I750501 B TWI750501 B TW I750501B
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unit
substrate
opening
processing
transfer robot
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TW202018847A (en
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藤木博幸
墨周武
伊東哲生
辻智
田鎖学
後藤裕典
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日商斯庫林集團股份有限公司
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    • HELECTRICITY
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    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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    • H01L21/67155Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67196Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the transfer chamber
    • HELECTRICITY
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    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
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    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67155Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H01L21/67173Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers in-line arrangement
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    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67155Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H01L21/67178Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers vertical arrangement
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    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • HELECTRICITY
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    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
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    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67742Mechanical parts of transfer devices
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    • H01ELECTRIC ELEMENTS
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    • H01L21/67763Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H01L21/67766Mechanical parts of transfer devices

Abstract

A placing part 40 of the substrate processing apparatus 1 is provided at a connection portion between a processing block 20 and an indexer block 10. The placing part 40 holds an unprocessed substrate 9 passed from the indexer block 10 to a center robot 22. Further, the placing part 40 holds a processed substrate 9 transferred from the center robot 22 to the indexer block 10. A first shielding part 51 can shut off the movement of the gas between the indexer block 10, the placing part 40 and a transport path 23 that connects a processing part 21 and the placing part 40 in the processing block 20. The indexer block 10 and the placing part 40 are low oxygen atmosphere with lower oxygen concentration than the atmosphere. Thereby, the oxidation of the substrate 9 in the substrate processing apparatus 1 can be suppressed.

Description

基板處理裝置以及基板處理方法Substrate processing apparatus and substrate processing method

本發明係有關於一種用以處理基板之基板處理裝置以及基板處理方法。The present invention relates to a substrate processing apparatus and a substrate processing method for processing substrates.

以往,在用以處理基板之基板處理裝置中,收容於環圈(hoop)等承載器(carrier)的基板係被索引機器人(indexer robot)搬出且載置於載置單元,並被中心機器人(center robot)從載置單元搬運至處理單元且被施予各種處理。Conventionally, in a substrate processing apparatus for processing substrates, a substrate accommodated in a carrier such as a hoop is unloaded by an indexer robot, placed on a placement unit, and then moved by a center robot ( center robot) is transported from the placing unit to the processing unit and given various treatments.

例如,在日本特許第6280837號公報(文獻1)以及日本特許第5626249號公報(文獻2)的基板處理系統中,於搬入搬出站的基板搬運機構與處理站的基板搬運機構之間設置有授受部。由於授受部的兩側的開口部未具有閉鎖機構而被恆常地開放,因此兩個站的內部空間係經由授受部而恆常地連通。該基板處理系統係設置於無塵室(cleaning room),並經由FFU(fan filter unit;風扇過濾器單元)對兩個站的內部空間供給無塵室內的空氣。For example, in the substrate processing systems of Japanese Patent No. 6280837 (Document 1) and Japanese Patent No. 5626249 (Document 2), an acceptor is provided between a substrate conveying mechanism of an in-out station and a substrate conveying mechanism of a processing station. Department. Since the openings on both sides of the receiving and receiving unit are constantly opened without a locking mechanism, the internal spaces of the two stations are constantly communicated through the receiving and receiving unit. The substrate processing system is installed in a clean room (cleaning room), and supplies the air in the clean room to the inner space of the two stations via FFU (fan filter unit; fan filter unit).

在文獻1的基板處理系統中,將搬入搬出站的內部空間的壓力設定成比處理站的內部空間的壓力還高,藉此形成從搬入搬出站經由授受部朝向處理站之空氣的流動。藉此,抑制在處理單元中所產生的化學品性氛圍等進入至搬入搬出站。此外,在授受部中,為了降低濕度對於晶圓上的器件(device)的影響,於授受部的搬入搬出站側的開口部設置有用以供給乾燥氣體之氣體噴出部。In the substrate processing system of Document 1, the pressure of the internal space of the loading and unloading station is set higher than the pressure of the internal space of the processing station, thereby forming the flow of air from the loading and unloading station to the processing station through the receiving and receiving section. Thereby, the chemical atmosphere etc. which generate|occur|produce in a process unit are suppressed from entering a carry-in and carry-out station. In addition, in order to reduce the influence of humidity on the devices on the wafer in the transfer section, a gas ejection section for supplying dry gas is provided in the opening of the transfer section on the loading and unloading station side.

另一方面,在日本特許第4669257號公報(文獻3)的基板處理裝置中,負載鎖定室(load lock chamber)、配置有搬運機器人之搬運室以及用以對晶圓進行處理之處理室係藉由真空泵(vacuum pump)而被真空排氣。此外,在該基板處理裝置中,可對負載鎖定室、搬運室以及處理室供給氮。藉由供給氮來抑制來自真空泵的油的逆擴散等污染基板。On the other hand, in the substrate processing apparatus of Japanese Patent No. 4669257 (Document 3), a load lock chamber, a transfer chamber in which a transfer robot is arranged, and a processing chamber for processing wafers are provided by It is evacuated by a vacuum pump. In addition, in this substrate processing apparatus, nitrogen can be supplied to the load lock chamber, the transfer chamber, and the processing chamber. Contamination of the substrate such as reverse diffusion of oil from the vacuum pump is suppressed by supplying nitrogen.

此外,日本特許第3737604號公報(文獻4)的基板處理裝置係具備有:接取室,係載置有已收容有複數個未處理的基板之承載器;搬運室,係配置有搬運機器人;複數個處理室;以及傳遞室,係載置有已收容有複數個處理完畢的基板。在該基板處理裝置中,對各個室供給惰性氣體,將各個室內的壓力設定成傳遞室的壓力大於搬運室的壓力且搬運室的壓力大於複數個處理室的壓力。In addition, the substrate processing apparatus of Japanese Patent No. 3737604 (Document 4) includes a receiving chamber on which a carrier that accommodates a plurality of unprocessed substrates is placed, and a transfer chamber on which a transfer robot is arranged; A plurality of processing chambers; and a transfer chamber, on which a plurality of processed substrates have been accommodated. In this substrate processing apparatus, an inert gas is supplied to each chamber, and the pressure in each chamber is set so that the pressure of the transfer chamber is higher than the pressure of the transfer chamber and the pressure of the transfer chamber is higher than the pressure of the plurality of processing chambers.

然而,在文獻1的裝置中,雖然形成有從搬入搬出站朝向處理站之空氣的流動,但是會有在處理單元中所產生的化學氛圍因為擴散而經由處理站進入至搬入搬出站之疑慮。此外,由於載置於授受部等之晶圓係在較長的時間中與空氣接觸,因此會有晶圓表面氧化之疑慮。However, in the apparatus of Document 1, although there is a flow of air from the loading and unloading station toward the processing station, there is a concern that the chemical atmosphere generated in the processing unit may enter the loading and unloading station through the processing station due to diffusion. In addition, since the wafers placed in the receiving and receiving parts are in contact with the air for a long time, there is a concern that the surface of the wafers is oxidized.

此外,在文獻3的裝置中,雖然可將負載鎖定室、搬運室以及處理室設定成低氧氛圍,但是由於負載鎖定室、搬運室以及處理室全部皆需要具有可對應真空氛圍的構造,因此從裝置的複雜化以及大型化等觀點而言不考慮將該裝置的構造應用於不進行真空下的處理的基板處理裝置。In addition, in the apparatus of Document 3, the load lock chamber, the transfer chamber, and the processing chamber can be set to a low-oxygen atmosphere, but since all of the load lock chamber, the transfer chamber, and the processing chamber need to have a structure that can cope with a vacuum atmosphere, From the viewpoints of complication and enlargement of the apparatus, it is not considered to apply the structure of the apparatus to a substrate processing apparatus that does not perform processing under vacuum.

在文獻4的裝置中,將傳遞室的壓力設定成大於搬運室的壓力,藉此在開放傳遞室與搬運室之間的擋門時形成從傳遞室朝向搬運室之惰性氣體的流動,但是會有在處理室中所產生的化學氛圍因為擴散而經由搬運室進入至傳遞室內之疑慮。In the apparatus of Document 4, the pressure of the transfer chamber is set to be higher than the pressure of the transfer chamber, whereby the flow of the inert gas from the transfer chamber to the transfer chamber is formed when the shutter between the transfer chamber and the transfer chamber is opened, but the There is a concern that the chemical atmosphere generated in the processing chamber enters the transfer chamber through the transfer chamber due to diffusion.

[發明所欲解決之課題][The problem to be solved by the invention]

本發明係著眼於一種用以處理基板之基板處理裝置,目的在於藉由將較長時間載置有基板之空間設定成低氧氛圍來抑制基板的氧化。The present invention is directed to a substrate processing apparatus for processing a substrate, and aims to suppress oxidation of the substrate by setting the space in which the substrate is placed for a long time to a low-oxygen atmosphere.

本發明較佳形態之一的基板處理裝置係具備有:處理區塊,係配置有用以處理基板之處理單元以及用以進行基板相對於前述處理單元之搬入以及搬出之第一搬運機器人;索引區塊,係配置有用以進行基板相對於可收容複數個基板的承載器之搬入以及搬出之第二搬運機器人;載置單元,係設置於前述處理區塊與前述索引區塊之間的連接部,用以保持從前述第二搬運機器人朝前述第一搬運機器人傳遞之未處理的基板以及從前述第一搬運機器人朝前述第二搬運機器人傳遞之處理完畢的基板;以及第一遮蔽部,係可阻隔氧濃度比大氣還低之低氧氛圍的前述索引區塊以及前述載置單元與搬運路徑之間的氣體的移動,前述搬運路徑係在前述處理區塊中連接前述處理單元與前述載置單元。依據該基板處理裝置,能抑制基板的氧化。A substrate processing apparatus according to a preferred aspect of the present invention includes: a processing block, which is provided with a processing unit for processing substrates and a first transfer robot for carrying in and out of substrates relative to the processing unit; an index area The block is equipped with a second transfer robot for carrying the substrates in and out of the carrier capable of accommodating a plurality of substrates; the placing unit is provided at the connecting portion between the processing block and the index block, used to hold the unprocessed substrates transferred from the second transfer robot to the first transfer robot and the processed substrates transferred from the first transfer robot to the second transfer robot; and the first shielding portion, which can block The movement of the gas between the index block and the placing unit in a low oxygen atmosphere with an oxygen concentration lower than that of the atmosphere, and the conveying path connecting the processing unit and the placing unit in the processing block. According to this substrate processing apparatus, the oxidation of the substrate can be suppressed.

較佳為,前述第一遮蔽部係具備有:門體,係用以將用以連接前述搬運路徑的內部空間與前述載置單元的內部空間之開口予以開閉。Preferably, the first shielding portion includes a door body for opening and closing an opening for connecting the inner space of the conveyance path and the inner space of the placement unit.

較佳為,前述基板處理裝置係進一步具備有:第一氣體供給部,係對前述載置單元供給惰性氣體,藉此將前述載置單元設定成低氧氛圍。Preferably, the substrate processing apparatus further includes a first gas supply unit configured to supply an inert gas to the placement unit, thereby setting the placement unit to a low-oxygen atmosphere.

較佳為,前述基板處理裝置係進一步具備有:第二遮蔽部,係可阻隔前述索引區塊與前述載置單元之間的氣體的移動。Preferably, the substrate processing apparatus is further provided with: a second shielding portion capable of blocking the movement of the gas between the index block and the placing unit.

較佳為,前述第二遮蔽部係具備有:門體,係用以將用以連接前述索引區塊的內部空間與前述載置單元的內部空間之開口予以開閉。Preferably, the second shielding portion includes a door for opening and closing an opening for connecting the inner space of the index block and the inner space of the placing unit.

較佳為,前述基板處理裝置係進一步具備有:第二氣體供給部,係對前述索引區塊供給惰性氣體,藉此將前述索引區塊設定成低氧氛圍。Preferably, the substrate processing apparatus further includes: a second gas supply unit for supplying an inert gas to the index block, thereby setting the index block in a low-oxygen atmosphere.

較佳為,前述基板處理裝置係進一步具備有:第二遮蔽部,係可阻隔前述索引區塊與前述載置單元之間的氣體的移動;第一氣體供給部,係對前述載置單元供給惰性氣體,藉此將前述載置單元設定成低氧氛圍;第二氣體供給部,係對前述索引區塊供給惰性氣體,藉此將前述索引區塊設定成低氧氛圍;以及控制部,係個別地控制從前述第一氣體供給部供給惰性氣體以及從前述第二氣體供給部供給惰性氣體。Preferably, the substrate processing apparatus is further provided with: a second shielding part for blocking the movement of gas between the index block and the placing unit; and a first gas supplying part for supplying the placing unit an inert gas for setting the placing unit in a low-oxygen atmosphere; a second gas supply part for supplying an inert gas to the index block, thereby setting the index block in a low-oxygen atmosphere; and a control part, for The supply of the inert gas from the first gas supply part and the supply of the inert gas from the second gas supply part are individually controlled.

較佳為,前述搬運路徑的氧濃度係比前述索引區塊的氧濃度以及前述載置單元的氧濃度還高。Preferably, the oxygen concentration of the conveyance path is higher than the oxygen concentration of the index block and the oxygen concentration of the placement unit.

較佳為,前述搬運路徑係大氣氛圍。Preferably, the aforementioned conveyance path is in the atmosphere.

較佳為,前述基板處理裝置係進一步具備有:第一氣體供給部,係對前述載置單元供給惰性氣體,藉此將前述載置單元設定成低氧氛圍;第二遮蔽部,係可阻隔前述索引區塊與前述載置單元之間的氣體的移動;以及控制部,係控制前述第一搬運機器人、前述第二搬運機器人、前述第一遮蔽部、前述第一氣體供給部以及前述第二遮蔽部。前述第一遮蔽部係具備有:第一門體,係用以將用以連接前述搬運路徑的內部空間與前述載置單元的內部空間之第一開口予以開閉。前述第二遮蔽部係具備有:第二門體,係用以將用以連接前述索引區塊的內部空間與前述載置單元的內部空間之第二開口予以開閉。藉由前述控制部的控制,在藉由前述第一門體以及前述第二門體閉鎖前述第一開口以及前述第二開口的狀態下將前述載置單元設定成低氧氛圍後,開放前述第二開口,藉由前述第二搬運機器人將未處理的基板經由前述第二開口搬入至前述載置單元,藉由前述第二門體閉鎖前述第二開口後,開放前述第一開口,藉由前述第一搬運機器人將前述未處理的基板經由前述第一開口從前述載置單元搬出。Preferably, the substrate processing apparatus further includes: a first gas supply unit for supplying an inert gas to the placement unit, thereby setting the placement unit in a low-oxygen atmosphere; and a second shielding unit for blocking movement of gas between the index block and the placing unit; and a control unit for controlling the first transfer robot, the second transfer robot, the first shielding unit, the first gas supply unit, and the second shade. The first shielding portion includes a first door body for opening and closing a first opening for connecting the inner space of the conveyance path and the inner space of the placement unit. The second shielding portion includes a second door for opening and closing a second opening for connecting the inner space of the index block and the inner space of the placing unit. Under the control of the control unit, the placing unit is set to a low-oxygen atmosphere in a state where the first opening and the second opening are closed by the first door and the second door, and then the first door is opened. Two openings, the unprocessed substrates are loaded into the placing unit through the second opening by the second transfer robot, the second opening is closed by the second door, the first opening is opened, and the first opening is opened by the second opening. The first transfer robot carries out the unprocessed substrate from the placement unit through the first opening.

較佳為,前述基板處理裝置係進一步具備有:第一氣體供給部,係對前述載置單元供給惰性氣體,藉此將前述載置單元設定成低氧氛圍;第二遮蔽部,係可阻隔前述索引區塊與前述載置單元之間的氣體的移動;以及控制部,係控制前述第一搬運機器人、前述第二搬運機器人、前述第一遮蔽部、前述第一氣體供給部以及前述第二遮蔽部。前述第一遮蔽部係具備有:第一門體,係用以將用以連接前述搬運路徑的內部空間與前述載置單元的內部空間之第一開口予以開閉。前述第二遮蔽部係具備有:第二門體,係用以將用以連接前述索引區塊的內部空間與前述載置單元的內部空間之第二開口予以開閉。藉由前述控制部的控制,在藉由前述第二門體閉鎖前述第二開口且開放前述第一開口的狀態下,藉由前述第一搬運機器人將處理完畢的基板經由前述第一開口搬入至前述載置單元後,藉由前述第一門體閉鎖前述第一開口,在藉由前述第一門體以及前述第二門體閉鎖前述第一開口以及前述第二開口的狀態下將前述載置單元設定成低氧氛圍後,開放前述第二開口,藉由前述第二搬運機器人將前述處理完畢的基板經由前述第二開口從前述載置單元搬出。Preferably, the substrate processing apparatus further includes: a first gas supply unit for supplying an inert gas to the placement unit, thereby setting the placement unit in a low-oxygen atmosphere; and a second shielding unit for blocking movement of gas between the index block and the placing unit; and a control unit for controlling the first transfer robot, the second transfer robot, the first shielding unit, the first gas supply unit, and the second shade. The first shielding portion includes a first door body for opening and closing a first opening for connecting the inner space of the conveyance path and the inner space of the placement unit. The second shielding portion includes a second door for opening and closing a second opening for connecting the inner space of the index block and the inner space of the placing unit. Under the control of the control unit, in a state in which the second opening is closed by the second door and the first opening is opened, the processed substrate is carried in through the first opening by the first transfer robot. After the placing unit, the first opening is closed by the first door, and the first opening and the second opening are placed in a state in which the first opening and the second opening are closed by the first door and the second door. After the unit is set in a low-oxygen atmosphere, the second opening is opened, and the processed substrate is carried out from the placement unit through the second opening by the second transfer robot.

本發明亦著眼於一種用以藉由基板處理裝置處理基板之基板處理方法。前述基板處理裝置係具備有:處理區塊,係配置有用以處理基板之處理單元以及用以進行基板相對於前述處理單元之搬入以及搬出之第一搬運機器人;索引區塊,係配置有用以進行基板相對於可收容複數個基板的承載器之搬入以及搬出之第二搬運機器人;以及載置單元,係設置於前述處理區塊與前述索引區塊之間的連接部,用以保持從前述第二搬運機器人朝前述第一搬運機器人傳遞之未處理的基板以及從前述第一搬運機器人朝前述第二搬運機器人傳遞之處理完畢的基板。本發明較佳形態之一的基板處理方法係具備有:工序(a),係藉由前述第二搬運機器人將基板從前述索引區塊搬入至前述載置單元;工序(b),係藉由前述第一搬運機器人從前述載置單元搬出前述基板並搬入至前述處理單元;工序(c),係在前述處理單元中對前述基板進行處理;工序(d),係藉由前述第一搬運機器人從前述處理單元搬出前述基板並搬入至前述載置單元;以及工序(e),係藉由前述第二搬運機器人將前述基板從前述載置單元搬出至前述索引區塊。可阻隔氧濃度比大氣還低之低氧氛圍的前述索引區塊以及前述載置單元與搬運路徑之間的氣體的移動,前述搬運路徑係在前述處理區塊中連接前述處理單元與前述載置單元。藉此,依據該基板處理方法,能抑制基板的氧化。The present invention also focuses on a substrate processing method for processing a substrate by a substrate processing apparatus. The substrate processing apparatus includes: a processing block configured with a processing unit for processing substrates and a first transfer robot for carrying in and out of substrates relative to the processing unit; an index block configured with processing a second transfer robot for carrying and unloading substrates into and out of a carrier capable of accommodating a plurality of substrates; and a loading unit, which is arranged at the connection portion between the processing block and the index block, and is used to maintain the load from the first Two unprocessed substrates transferred from the first transfer robot to the first transfer robot and processed substrates transferred from the first transfer robot to the second transfer robot. A substrate processing method according to a preferred aspect of the present invention includes: step (a), wherein the second transfer robot transfers the substrate from the index block to the placing unit; step (b), is performed by The first transfer robot unloads the substrate from the placement unit and carries it into the processing unit; step (c) is to process the substrate in the processing unit; step (d) is performed by the first transfer robot The substrate is unloaded from the processing unit and loaded into the placement unit; and in step (e), the second transfer robot is used to unload the substrate from the placement unit to the index block. The movement of the gas between the index block and the placing unit and the conveying path in the low-oxygen atmosphere with the oxygen concentration lower than that of the atmospheric air can be blocked, and the conveying path is connected with the treating unit and the placing in the treating block. unit. Thereby, according to this substrate processing method, the oxidation of the substrate can be suppressed.

本發明的上面所說明的目的以及其他目的、特徵、態樣以及優點係參照隨附的圖式並藉由以下所進行的本發明的詳細的說明而明瞭。The above-described objects and other objects, features, aspects, and advantages of the present invention will become apparent from the following detailed description of the present invention with reference to the accompanying drawings.

圖1係本發明的實施形態之一的基板處理裝置1的俯視圖。圖2係從圖1的Ⅱ-Ⅱ線觀看基板處理裝置1之圖。此外,於以下所參照的各圖中適當地附上XYZ正交座標系統,XYZ正交座標系統係將Z軸方向作為鉛直方向(亦即上下方向)且將XY平面作為水平面。此外,在圖2中,省略基板處理裝置1的+X側的一部分的圖示。FIG. 1 is a plan view of a substrate processing apparatus 1 according to one embodiment of the present invention. FIG. 2 is a view of the substrate processing apparatus 1 viewed from the line II-II in FIG. 1 . In addition, the XYZ orthogonal coordinate system which makes the Z-axis direction the vertical direction (that is, the up-down direction) and the XY plane as the horizontal plane is appropriately attached to each figure referred to below. In addition, in FIG. 2, illustration of a part of the +X side of the substrate processing apparatus 1 is abbreviate|omitted.

基板處理裝置1係用以連續地對複數個略圓板狀的半導體基板9(以下簡稱「基板9」)進行處理之裝置。在基板處理裝置1中,例如進行用以對基板9供給處理液之液體處理。基板處理裝置1係具備有複數個承載器台(carrier stage)11、索引區塊10、處理區塊20、載置單元40以及控制部60。索引區塊10以及處理區塊20亦分別被稱為索引區以及處理區。此外,索引區塊10亦被稱為設備前段模組(EFEM;Equipment Front End Module)單元等。在圖1所示的例子中,從-X側朝向+X側依序鄰接配置有複數個(例如三個)承載器台11、索引區塊10以及處理區塊20。The substrate processing apparatus 1 is an apparatus for continuously processing a plurality of substantially disc-shaped semiconductor substrates 9 (hereinafter simply referred to as "substrates 9"). In the substrate processing apparatus 1 , for example, liquid processing for supplying a processing liquid to the substrate 9 is performed. The substrate processing apparatus 1 includes a plurality of carrier stages 11 , an index block 10 , a processing block 20 , a mounting unit 40 , and a control unit 60 . The index block 10 and the processing block 20 are also referred to as an index area and a processing area, respectively. In addition, the index block 10 is also referred to as an Equipment Front End Module (EFEM; Equipment Front End Module) unit or the like. In the example shown in FIG. 1 , a plurality of (for example, three) carrier stages 11 , index blocks 10 , and processing blocks 20 are arranged adjacent to each other in this order from the −X side toward the +X side.

複數個承載器台11係沿著索引區塊10的-X側的側壁排列於Y方向。複數個承載器台11係分別為供承載器95載置之載置台。承載器95係可收容複數個圓板狀的基板9。於承載器95的內部空間填滿有惰性氣體(例如氮(N2 )或者氬(Ar))並變成低氧氛圍。於索引區塊10的-X側的側壁中之與各個承載器台11上的承載器95對應之位置設置有開口部。於該開口部設置有承載器用擋門,在進行基板9相對於承載器95之搬出以及搬入時,將該承載器用擋門予以開閉。The plurality of carrier stages 11 are arranged in the Y direction along the side wall on the -X side of the index block 10 . The plurality of carrier tables 11 are respectively a mounting table on which the carrier 95 is mounted. The carrier 95 can accommodate a plurality of disk-shaped substrates 9 . The inner space of the carrier 95 is filled with an inert gas such as nitrogen (N 2 ) or argon (Ar) and becomes a low-oxygen atmosphere. An opening is provided at a position corresponding to the carrier 95 on each carrier table 11 in the side wall on the -X side of the index block 10 . A carrier shutter is provided at the opening, and the carrier shutter is opened and closed when the substrate 9 is carried out and loaded into the carrier 95 .

藉由OHT(Overhead Hoist Transfer;天花板運輸工具)等從基板處理裝置1的外部將已收容有複數個未處理的基板9之承載器95搬入並載置於各個承載器台11。此外,處理區塊20中已結束處理之處理完畢的基板9係被收容於載置於承載器台11的承載器95。收容有處理完畢的基板9之承載器95係被OHT等搬出至基板處理裝置1的外部。亦即,承載器台11係作為用以層疊未處理的基板9以及處理完畢的基板9之基板層疊部而發揮作用。The carriers 95 that have accommodated the plurality of unprocessed substrates 9 are carried in from the outside of the substrate processing apparatus 1 by an OHT (Overhead Hoist Transfer) or the like, and are placed on the respective carrier stages 11 . In addition, the processed substrates 9 that have been processed in the processing block 20 are accommodated in the carrier 95 placed on the carrier stage 11 . The carrier 95 in which the processed substrate 9 is accommodated is carried out to the outside of the substrate processing apparatus 1 by OHT or the like. That is, the stage 11 functions as a substrate stacking portion for stacking the unprocessed substrates 9 and the processed substrates 9 .

承載器95係例如為用以將基板9收容於密閉空間之FOUP(Front Opening Unified Pod;前開式晶圓傳送盒)。承載器95並未限定於FOUP,例如亦可為SMIF(Standard Mechanical Inter Face;標準製造介面)盒等。此外,承載器台11的數量係可為一個亦可為兩個以上。The carrier 95 is, for example, a FOUP (Front Opening Unified Pod) used to accommodate the substrate 9 in a closed space. The carrier 95 is not limited to FOUP, for example, it can also be a SMIF (Standard Mechanical Inter Face; Standard Manufacturing Interface) box or the like. In addition, the number of the carrier stage 11 may be one or more than two.

索引區塊10係從承載器95接取未處理的基板9並傳遞至處理區塊20。此外,索引區塊10係接取從處理區塊20搬出的處理完畢的基板9並搬入至承載器95。於索引區塊10的內部空間100配置有用以進行將基板9相對於承載器95搬入以及搬出之索引機器人12。The index block 10 receives the unprocessed substrate 9 from the carrier 95 and transfers it to the processing block 20 . In addition, the index block 10 receives the processed substrate 9 carried out from the processing block 20 and carries it into the carrier 95 . In the inner space 100 of the index block 10, an index robot 12 for carrying the substrate 9 in and out of the carrier 95 is disposed.

索引機器人12係具備有兩隻搬運臂121a、121b、臂台122以及基台123。兩隻搬運臂121a、121b係搭載於臂台122。基台123係固定於索引區塊10的框架。The index robot 12 includes two transfer arms 121 a and 121 b , an arm base 122 and a base 123 . The two conveyance arms 121 a and 121 b are mounted on the arm base 122 . The base 123 is fixed to the frame of the index block 10 .

臂台122係搭載於基台123上。於基台123內置有用以使臂台122繞著於上下方向(亦即Z方向)延伸的旋轉軸旋轉之馬達(未圖示)以及用以使臂台122沿著上下方向移動之馬達(未圖示)。搬運臂121a、121b係上下分離地配置於臂台122上。The arm base 122 is mounted on the base 123 . A motor (not shown) for rotating the arm table 122 around a rotation axis extending in the up-down direction (ie, the Z direction) and a motor (not shown) for moving the arm table 122 in the up-down direction are built in the base 123 . icon). The conveyance arms 121a and 121b are arranged on the arm base 122 so as to be separated from each other up and down.

於搬運臂121a、121b的前端分別設置有俯視觀看時為略U字狀的手部(hand)。該手部係例如具備有:基部,係於寬度方向展開;以及兩隻爪部,係從該基部的寬度方向兩端部朝與寬度方向垂直的長度方向略平行地延伸。搬運臂121a、121b係分別藉由手部支撐一片基板9的下表面。此外,搬運臂121a、121b係藉由內置於臂台122的驅動機構(未圖示)使多關節機構屈伸,藉此沿著水平方向(亦即將臂台122的旋轉軸作為中心之徑方向)彼此獨立地移動。換言之,手部係進退自如、伸降自如且旋轉自如地設置於索引機器人12。A substantially U-shaped hand is provided at the front ends of the conveyance arms 121a and 121b, respectively. The hand is provided with, for example, a base extending in the width direction, and two pawls extending from both widthwise ends of the base in a longitudinal direction perpendicular to the widthwise direction. The conveying arms 121a and 121b respectively support the lower surface of one substrate 9 with their hands. In addition, the conveying arms 121a and 121b are flexed and extended by a multi-joint mechanism by a drive mechanism (not shown) built in the arm base 122 so as to follow the horizontal direction (that is, the radial direction with the rotation axis of the arm base 122 as the center). move independently of each other. In other words, the hand is provided on the index robot 12 so as to be able to move forward and backward, to extend and fall, and to rotate freely.

索引機器人12係搬運機器人,用以分別使藉由手部保持基板9之搬運臂121a、121b個別地存取(access)至載置於承載器台11的承載器95以及載置單元40,藉此在承載器95以及載置單元40之間搬運基板9。索引機器人12中的上面所說明的移動機構並未限定於上面所說明的例子,亦可為其他的機構。例如,作為用以將搬運臂121a、121b於上下方向移動的機構,亦可採用使用了滑輪(pulley)與時序帶(timing belt)之帶輸送機構等。The indexing robot 12 is a transfer robot for individually accessing the carrier 95 and the placing unit 40 on the carrier table 11 by the transfer arms 121a and 121b holding the substrate 9 by their hands, respectively. Here, the substrate 9 is conveyed between the carrier 95 and the placement unit 40 . The moving mechanism described above in the index robot 12 is not limited to the example described above, and may be other mechanisms. For example, as a mechanism for moving the conveyance arms 121a and 121b in the up-down direction, a belt conveying mechanism using a pulley and a timing belt or the like may be employed.

於處理區塊20設置有:搬運路徑23,係利用於基板9的搬運;以及複數個處理單元21,係配置於搬運路徑23的周圍。在圖1所示的例子中,搬運路徑23係在處理區塊20的Y方向的中央朝X方向延伸。於搬運路徑23的內部空間230配置有中心機器人22,中心機器人22係用以進行基板9相對於各個處理單元21之搬入以及搬出。The processing block 20 is provided with a conveyance path 23 used for conveyance of the substrate 9 , and a plurality of processing units 21 arranged around the conveyance path 23 . In the example shown in FIG. 1, the conveyance path 23 extends in the X direction at the center of the processing block 20 in the Y direction. The center robot 22 is arranged in the inner space 230 of the conveyance path 23 , and the center robot 22 is used for carrying in and out of the substrates 9 with respect to the respective processing units 21 .

中心機器人22係具備有兩隻搬運臂221a、221b、臂台222以及支柱223。兩隻搬運臂221a、221b係搭載於臂台222。支柱223係固定於處理區塊20的框架。The center robot 22 includes two transfer arms 221 a and 221 b , an arm base 222 , and a support column 223 . The two conveyance arms 221 a and 221 b are mounted on the arm base 222 . The pillars 223 are fixed to the frame of the processing block 20 .

臂台222係可於上下方向移動地設置於支柱223。於支柱223內置有用以使臂台222沿著上下方向移動之升降機構224。升降機構224係例如為組合了馬達以及滾珠螺桿之機構。升降機構224的構造亦可進行各種變更。搬運臂221a、221b係上下分離地配置於臂台222上。The arm platform 222 is provided on the support column 223 so as to be movable in the vertical direction. A lift mechanism 224 for moving the arm table 222 in the up-down direction is built in the support column 223 . The elevating mechanism 224 is, for example, a mechanism combining a motor and a ball screw. The structure of the elevating mechanism 224 may be variously changed. The conveyance arms 221a and 221b are arranged on the arm base 222 so as to be separated from each other up and down.

於搬運臂221a、221b的前端分別設置有俯視觀看時為略U字狀的手部。該手部係例如具備有:基部,係於寬度方向展開;以及兩隻爪部,係從該基部的寬度方向兩端部朝與寬度方向垂直的長度方向略平行地延伸。搬運臂221a、221b係分別藉由手部支撐一片基板9的下表面。搬運臂221a、221b係藉由內置於臂台222的驅動機構(未圖示)使多關節機構屈伸,藉此沿著水平方向彼此獨立地移動。此外,搬運臂221a、221b係藉由內置於臂台222的該驅動機構彼此獨立地於水平方面旋轉。換言之,手部係進退自如、伸降自如且旋轉自如地設置於中心機器人22。A substantially U-shaped hand is provided at the front ends of the conveyance arms 221a and 221b, respectively. The hand is provided with, for example, a base extending in the width direction, and two pawls extending from both widthwise ends of the base in a longitudinal direction perpendicular to the widthwise direction. The conveying arms 221a and 221b support the lower surface of one substrate 9 with their hands, respectively. The conveying arms 221a and 221b move independently of each other in the horizontal direction by flexing and extending the multi-joint mechanism by a drive mechanism (not shown) built in the arm base 222 . In addition, the conveyance arms 221a and 221b are rotated horizontally independently of each other by the drive mechanism built in the arm base 222 . In other words, the hand is provided on the center robot 22 so as to be able to move forward and backward, to extend and fall, and to rotate freely.

中心機器人22係搬運機器人,用以分別使藉由手部保持基板9之搬運臂221a、221b個別地存取至載置單元40以及複數個處理單元21,藉此在載置單元40與處理單元21之間搬運基板9。在以下的說明中,亦將中心機器人22以及索引機器人12分別稱為「第一搬運機器人」以及「第二搬運機器人」。中心機器人22中的上面所說明的移動機構並未限定於上面所說明的例子,亦可為其他的機構。例如,作為用以將搬運臂221a、221b於上下方向移動的機構,亦可採用使用了滑輪與時序帶之帶輸送機構等。The central robot 22 is a transfer robot, and is used to individually access the transfer arms 221 a and 221 b holding the substrate 9 by their hands to the placing unit 40 and the plurality of processing units 21 , so that the placing unit 40 and the processing units 21 The board 9 is conveyed between 21. In the following description, the center robot 22 and the index robot 12 are also referred to as "first transfer robot" and "second transfer robot", respectively. The moving mechanism described above in the center robot 22 is not limited to the example described above, and may be other mechanisms. For example, as a mechanism for moving the conveyance arms 221a and 221b in the up-down direction, a belt conveying mechanism using a pulley and a timing belt, etc. may be employed.

在各個處理單元21中,對基板9進行處理。在圖1以及圖2所示的例子中,於處理區塊20設置有十二個處理單元21。具體而言,層疊於Z方向的三個處理單元21的群組係於俯視觀看時的處理單元21的周圍配置有四組。In each processing unit 21, the substrate 9 is processed. In the example shown in FIG. 1 and FIG. 2 , twelve processing units 21 are provided in the processing block 20 . Specifically, four groups of three processing units 21 stacked in the Z direction are arranged around the processing unit 21 in a plan view.

圖3係顯示處理單元21的一例之圖。處理單元21係具備有殼體(housing)211以及處理部24。處理部24係收容於殼體211的內部空間。處理部24係具備有基板保持部241、基板旋轉機構242、罩(cup)部243、噴嘴244以及頂板(top plate)245。處理部24係例如對基板9的上表面91進行蝕刻處理等液體處理。FIG. 3 is a diagram showing an example of the processing unit 21 . The processing unit 21 includes a housing 211 and a processing unit 24 . The processing unit 24 is accommodated in the inner space of the casing 211 . The processing unit 24 includes a substrate holding unit 241 , a substrate rotating mechanism 242 , a cup unit 243 , a nozzle 244 , and a top plate 245 . The processing unit 24 performs, for example, liquid processing such as etching processing on the upper surface 91 of the substrate 9 .

基板保持部241係例如以水平狀態保持基板9。基板保持部241係例如具備有複數個機械夾具(mechanical chuck),複數個機械夾具係接觸並保持基板9的周緣部。基板旋轉機構242係將朝向上下方向的旋轉軸J1作為中心旋轉基板保持部241,藉此旋轉被基板保持部241保持的基板9。基板旋轉機構242係例如為電動馬達,連接至基板保持部241的下表面。The substrate holding portion 241 holds the substrate 9 in a horizontal state, for example. The substrate holding portion 241 includes, for example, a plurality of mechanical chucks, and the plurality of mechanical chucks contact and hold the peripheral portion of the substrate 9 . The substrate rotation mechanism 242 rotates the substrate holding portion 241 about the rotation axis J1 facing the vertical direction as a center, thereby rotating the substrate 9 held by the substrate holding portion 241 . The substrate rotation mechanism 242 is, for example, an electric motor, and is connected to the lower surface of the substrate holding portion 241 .

罩部243係略圓筒狀的構件,遍及全周地圍繞基板保持部241的周圍。罩部243係接住從旋轉中的基板9朝周圍飛散的液體。頂板245係阻隔板,覆蓋基板9的上方並阻隔周圍的氛圍。頂板245係例如被基板保持部241從下方支撐,並藉由基板旋轉機構242而與基板保持部241一起旋轉。噴嘴244係插入至設置於頂板245的中央部的開口,並朝基板9的上表面的中央部供給處理液。The cover portion 243 is a substantially cylindrical member, and surrounds the periphery of the substrate holding portion 241 over the entire circumference. The cover portion 243 catches the liquid scattered from the rotating substrate 9 to the surroundings. The top plate 245 is a blocking plate, covering the top of the substrate 9 and blocking the surrounding atmosphere. The top plate 245 is supported from below by, for example, the substrate holding portion 241 , and is rotated together with the substrate holding portion 241 by the substrate rotating mechanism 242 . The nozzle 244 is inserted into the opening provided in the center part of the top plate 245 , and supplies the processing liquid to the center part of the upper surface of the substrate 9 .

如圖1以及圖2所示,於索引區塊10與處理區塊20之間設置有大致朝Y方向延伸之氛圍阻隔用的隔壁30。隔壁30係遍及索引區塊10的Y方向的全長以及Z方向的全長而設置。在索引區塊10的Y方向的中央部中,隔壁30的一部分係突出至處理區塊20之側(亦即+X側)。在以下的說明中,將該突出的部位稱為「連繫部31」。連繫部31的略隧道狀的內部空間310係索引區塊10的內部空間100的一部分,並連繫索引區塊10與處理區塊20的搬運路徑23。As shown in FIG. 1 and FIG. 2 , between the index block 10 and the processing block 20 , a partition wall 30 for an atmosphere barrier extending substantially in the Y direction is provided. The partition wall 30 is provided over the entire length of the index block 10 in the Y direction and the entire length in the Z direction. In the central portion of the index block 10 in the Y direction, a part of the partition wall 30 protrudes to the side of the processing block 20 (that is, the +X side). In the following description, this protruding portion is referred to as a "connecting portion 31". The slightly tunnel-shaped inner space 310 of the connection unit 31 is a part of the inner space 100 of the index block 10 , and connects the index block 10 and the transport path 23 of the processing block 20 .

載置單元40係載置於連繫部31的內部空間310中的+X側的端部。換言之,載置單元40係設置於索引區塊10與處理區塊20之間的連接部。如上面所說明般,索引機器人12以及中心機器人22係可對載置單元40存取。載置單元40係經由配置有中心機器人22的搬運路徑23連接至複數個處理單元21。The placing unit 40 is placed on the end portion on the +X side in the inner space 310 of the connecting portion 31 . In other words, the mounting unit 40 is disposed at the connection portion between the index block 10 and the processing block 20 . As described above, the index robot 12 and the center robot 22 can access the placement unit 40 . The placement unit 40 is connected to the plurality of processing units 21 via the conveyance path 23 in which the center robot 22 is arranged.

索引機器人12係將從承載器95搬出的未處理的基板9載置於載置單元40。中心機器人22係從載置單元40將未處理的基板9搬出並搬入至處理單元21。此外,中心機器人22係將從處理單元21搬出的處理完畢的基板9載置於載置單元40。索引機器人12係從載置單元40將處理完畢的基板9搬出並搬入至承載器95。換言之,載置單元40係保持從索引機器人12傳遞至中心機器人22之未處理的基板9以及從中心機器人22朝索引機器人12傳遞之處理完畢的基板9。The index robot 12 places the unprocessed substrate 9 carried out from the carrier 95 on the placement unit 40 . The center robot 22 carries out the unprocessed substrate 9 from the placement unit 40 and carries it into the processing unit 21 . In addition, the center robot 22 mounts the processed substrate 9 carried out from the processing unit 21 on the mounting unit 40 . The index robot 12 carries out the processed substrate 9 from the placement unit 40 and carries it into the carrier 95 . In other words, the placement unit 40 holds the unprocessed substrates 9 transferred from the indexing robot 12 to the center robot 22 and the processed substrates 9 transferred from the center robot 22 to the indexing robot 12 .

圖4係從+X側觀看載置單元40之側視圖。圖5係從-X側觀看載置單元40之側視圖。圖6係從+X側觀看載置單元40的內部之圖。在圖6中,剖面顯示載置單元40的框體434並圖示載置單元40的內部。此外,在圖6中,一併顯示載置單元40以外的構成。FIG. 4 is a side view of the placement unit 40 viewed from the +X side. FIG. 5 is a side view of the placement unit 40 viewed from the -X side. FIG. 6 is a view of the inside of the placement unit 40 viewed from the +X side. In FIG. 6 , the frame body 434 of the placement unit 40 is shown in cross section, and the inside of the placement unit 40 is illustrated. In addition, in FIG. 6, the structure other than the mounting unit 40 is shown together.

載置單元40係具備有框體434、基板支撐部431、第一擋門432以及第二擋門433。框體434係略立方體狀的箱形構件。可於載置單元40的內部空間400收容有四片基板9。該四片基板9係以彼此分離的狀態排列並載置於上下方向(亦即Z方向)。基板支撐部431係收容於框體434的內部。基板支撐部431係以水平狀態支撐各個基板9。基板支撐部431係例如為從框體434的內側面突出之複數個凸部,並於該複數個凸部上載置有基板9的周緣部。基板支撐部431的形狀以及構造亦可適當地變更。The placement unit 40 includes a frame body 434 , a substrate support portion 431 , a first shutter 432 , and a second shutter 433 . The frame body 434 is a substantially cubic box-shaped member. Four substrates 9 can be accommodated in the inner space 400 of the placement unit 40 . The four substrates 9 are arranged in a state of being separated from each other, and are placed in the vertical direction (that is, the Z direction). The substrate support portion 431 is accommodated inside the frame body 434 . The substrate support portion 431 supports each of the substrates 9 in a horizontal state. The substrate support portion 431 is, for example, a plurality of convex portions protruding from the inner surface of the frame body 434 , and the peripheral portion of the substrate 9 is placed on the plurality of convex portions. The shape and structure of the substrate support portion 431 may be appropriately changed.

於框體434的+X側的側壁設置有第一開口435,第一開口435係連接處理區塊20的搬運路徑23的內部空間230與載置單元40的內部空間400。第一開口435係略矩形狀的貫通孔。第一開口435係可使被中心機器人22保持的兩片基板9通過。於框體434的-X側的側壁設置有第二開口436,第二開口436係連接索引區塊10的內部空間100與載置單元40的內部空間400。第二開口436係略矩形狀的貫通孔。第二開口436係可使被索引機器人12保持的兩片基板9通過。A first opening 435 is provided on the side wall on the +X side of the frame body 434 , and the first opening 435 connects the inner space 230 of the conveyance path 23 of the processing block 20 and the inner space 400 of the placing unit 40 . The first opening 435 is a substantially rectangular through hole. The first opening 435 allows the two substrates 9 held by the central robot 22 to pass therethrough. A second opening 436 is provided on the side wall on the -X side of the frame body 434 , and the second opening 436 connects the inner space 100 of the index block 10 and the inner space 400 of the placing unit 40 . The second opening 436 is a substantially rectangular through hole. The second opening 436 allows the two substrates 9 held by the indexing robot 12 to pass therethrough.

第一擋門432係用以開閉框體434的第一開口435之門體(亦即第一門體)。第一擋門432係略長方形的板狀構件。第一擋門432係藉由第一擋門移動機構437於上下方向(亦即Z方向)移動且亦於X方向移動。第一擋門移動機構437係例如具備有用以使第一擋門432於上下方向移動之電動缸(electric cylinder)等致動器(actuator) (未圖示)以及用以將第一擋門432朝框體434按壓之電動缸等致動器(未圖示)。此外,在圖2中省略第一擋門移動機構437的圖示。The first blocking door 432 is a door body (ie, the first door body) used to open and close the first opening 435 of the frame body 434 . The first shutter 432 is a substantially rectangular plate-shaped member. The first door 432 is moved in the up-down direction (ie, the Z direction) and also in the X direction by the first door moving mechanism 437 . The first door moving mechanism 437 includes, for example, an actuator (not shown) such as an electric cylinder for moving the first door 432 in the vertical direction, and an actuator (not shown) for moving the first door 432 An actuator (not shown) such as an electric cylinder is pressed against the frame body 434 . In addition, illustration of the 1st shutter moving mechanism 437 is abbreviate|omitted in FIG.

如圖4中的實線所示,第一擋門432於X方向與第一開口435重疊,藉此第一開口435被閉鎖。第一擋門432係藉由第一擋門移動機構437朝框體434按壓,藉此在第一開口435的周圍與框體434氣密地接觸。藉此,阻隔處理區塊20的搬運路徑23的內部空間230與載置單元40的內部空間400之間的氣體經由第一開口435移動。此外,藉由第一擋門移動機構437使第一擋門432從框體434朝+X方向離開後朝圖4中以二點鏈線所示的位置下降,藉此第一開口435被開放。藉此,搬運路徑23的內部空間230與載置單元40的內部空間400之間的空氣可經由第一開口435移動。As shown by the solid line in FIG. 4 , the first shutter 432 overlaps with the first opening 435 in the X direction, whereby the first opening 435 is closed. The first shutter 432 is pressed toward the frame body 434 by the first shutter door moving mechanism 437 , thereby airtightly contacting the frame body 434 around the first opening 435 . Thereby, the gas between the inner space 230 of the conveyance path 23 of the processing block 20 and the inner space 400 of the placing unit 40 is blocked from moving through the first opening 435 . Furthermore, the first opening 435 is opened by moving the first door 432 away from the frame 434 in the +X direction by the first door moving mechanism 437 and then descending toward the position shown by the two-dot chain line in FIG. 4 . Thereby, the air between the inner space 230 of the conveyance path 23 and the inner space 400 of the placement unit 40 can move through the first opening 435 .

第二擋門433係用以開閉框體434的第二開口436之門體(亦即第二門體)。第二擋門433係略長方形的板狀構件。第二擋門433係藉由第二擋門移動機構438於上下方向(亦即Z方向)移動且亦於X方向移動。第二擋門移動機構438係例如具備有用以使第二擋門433於上下方向移動之電動缸等致動器 (未圖示)以及用以將第二擋門433朝框體434按壓之電動缸等致動器(未圖示)。此外,在圖2中省略第二擋門移動機構438的圖示。The second blocking door 433 is a door body (ie, the second door body) used to open and close the second opening 436 of the frame body 434 . The second shutter 433 is a substantially rectangular plate-like member. The second door 433 is moved in the up-down direction (ie, the Z direction) and also in the X direction by the second door moving mechanism 438 . The second shutter moving mechanism 438 includes, for example, an actuator (not shown) such as an electric cylinder for moving the second shutter 433 in the vertical direction, and an electric motor for pressing the second shutter 433 toward the frame 434 . Actuators such as cylinders (not shown). In addition, illustration of the 2nd door moving mechanism 438 is abbreviate|omitted in FIG.

如圖5中的實線所示,第二擋門433於X方向與第二開口436重疊,藉此第二開口436被閉鎖。第二擋門433係藉由第二擋門移動機構438而朝框體434按壓,藉此在第二開口436的周圍與框體434氣密地接觸。藉此,阻隔索引區塊10的內部空間100與載置單元40的內部空間400之間的氣體經由第二開口436移動。此外,藉由第二擋門移動機構438使第二擋門433從框體434朝-X方向離開後朝圖5中以二點鏈線所示的位置下降,藉此第二開口436被開放。藉此,索引區塊10的內部空間100與載置單元40的內部空間400之間的空氣可經由第二開口436移動。As shown by the solid line in FIG. 5 , the second shutter 433 overlaps with the second opening 436 in the X direction, whereby the second opening 436 is closed. The second shutter 433 is pressed toward the frame body 434 by the second shutter moving mechanism 438 , thereby airtightly contacting the frame body 434 around the second opening 436 . Thereby, the gas between the inner space 100 of the index block 10 and the inner space 400 of the placing unit 40 is blocked from moving through the second opening 436 . In addition, the second door 433 is separated from the frame body 434 in the -X direction by the second door moving mechanism 438 and then descends toward the position shown by the two-dot chain line in FIG. 5 , whereby the second opening 436 is opened. . Thereby, the air between the inner space 100 of the index block 10 and the inner space 400 of the placing unit 40 can move through the second opening 436 .

在載置單元40的第一開口435被第一擋門432閉鎖的狀態下,藉由包含有圖1以及圖2所示的連繫部31的隔壁30、載置單元40的框體434以及藉由第一擋門移動機構437而移動的第一擋門432阻隔索引區塊10以及載置單元40與處理區塊20的搬運路徑23之間的氣體的移動。亦即,隔壁30、框體434、第一擋門432以及第一擋門移動機構437係構成第一遮蔽部51,第一遮蔽部51係可阻隔索引區塊10以及載置單元40與處理區塊20的搬運路徑23之間的氣體的移動。第一遮蔽部51亦可包含有隔壁30、框體434、第一擋門432以及第一擋門移動機構437以外的構成。In a state where the first opening 435 of the placing unit 40 is closed by the first shutter 432, the partition wall 30 including the connecting portion 31 shown in FIG. 1 and FIG. 2, the frame body 434 of the placing unit 40, and the The first shutter 432 moved by the first shutter moving mechanism 437 blocks the movement of the gas between the index block 10 and the placement unit 40 and the conveyance path 23 of the processing block 20 . That is, the partition wall 30 , the frame body 434 , the first shutter 432 and the first shutter moving mechanism 437 constitute the first shielding portion 51 , and the first shielding portion 51 can block the index block 10 and the placing unit 40 from processing The movement of the gas between the conveyance paths 23 of the block 20 . The first shielding portion 51 may also include structures other than the partition wall 30 , the frame body 434 , the first shutter 432 , and the first shutter moving mechanism 437 .

此外,在載置單元40的第二開口436被藉由第二擋門移動機構438移動的第二擋門433閉鎖的狀態下,藉由載置單元40的框體434以及第二擋門433阻隔索引區塊10與載置單元40之間的氣體的移動。亦即,框體434、第二擋門433以及第二擋門移動機構438係構成第二遮蔽部52,第二遮蔽部52係可阻隔索引區塊10與載置單元40之間的氣體的移動。第二遮蔽部52亦可包含有框體434、第二擋門433以及第二擋門移動機構438以外的構成。In addition, in a state where the second opening 436 of the placement unit 40 is closed by the second shutter 433 moved by the second shutter moving mechanism 438, the frame 434 of the placement unit 40 and the second shutter 433 The movement of the gas between the index block 10 and the placing unit 40 is blocked. That is, the frame body 434 , the second shutter 433 , and the second shutter moving mechanism 438 constitute the second shielding portion 52 , and the second shielding portion 52 can block the gas between the index block 10 and the placing unit 40 . move. The second shielding portion 52 may also include structures other than the frame body 434 , the second shutter 433 and the second shutter moving mechanism 438 .

如圖6所示,基板處理裝置1係進一步具備有第一氣體供給部55,第一氣體供給部55係對載置單元40供給惰性氣體(例如氮或氬)。第一氣體供給部55係具備有中央噴出部551、周緣噴出部552、側方噴出部553以及排氣埠554。中央噴出部551以及周緣噴出部552係配置於載置單元40的框體434的頂蓋部附近,並經由閥581連接至惰性氣體供給源58。側方噴出部553係配置於載置在載置單元40內的基板9的周圍,並經由閥582連接至惰性氣體供給源58。排氣埠554係連接至吸引機構59。惰性氣體供給源58以及吸引機構59係例如設置於基板處理裝置1的外部。As shown in FIG. 6 , the substrate processing apparatus 1 further includes a first gas supply unit 55 that supplies an inert gas (eg, nitrogen or argon) to the mounting unit 40 . The first gas supply part 55 includes a central discharge part 551 , a peripheral discharge part 552 , a side discharge part 553 , and an exhaust port 554 . The central ejection portion 551 and the peripheral ejection portion 552 are arranged in the vicinity of the top cover portion of the frame body 434 of the mounting unit 40 , and are connected to the inert gas supply source 58 via the valve 581 . The side ejection portion 553 is arranged around the substrate 9 placed in the placement unit 40 , and is connected to the inert gas supply source 58 via the valve 582 . The exhaust port 554 is connected to the suction mechanism 59 . The inert gas supply source 58 and the suction mechanism 59 are provided, for example, outside the substrate processing apparatus 1 .

中央噴出部551係位於載置在載置單元40內之基板9的中央部(亦即排除了周緣部之部位)的上方。中央噴出部551的下表面係例如由略均等地分散配置有複數個噴出口之略圓板狀的衝孔板(punching plate)所形成。周緣噴出部552係位於載置在載置單元40內之基板9的周緣部的上方。於周緣噴出部552的下表面設置有例如略圓環狀且細縫(slit)狀的噴出口。The central ejection portion 551 is located above the central portion (ie, the portion excluding the peripheral portion) of the substrate 9 placed in the placement unit 40 . The lower surface of the central ejection portion 551 is formed of, for example, a substantially disc-shaped punching plate in which a plurality of ejection ports are distributed approximately evenly. The peripheral ejection portion 552 is located above the peripheral portion of the substrate 9 placed in the placement unit 40 . On the lower surface of the peripheral discharge portion 552, for example, a substantially annular and slit-shaped discharge port is provided.

側方噴出部553係具備有複數個噴出要素555,複數個噴出要素555係以略等角度間隔配置於基板9的周圍的周方向(亦即將通過基板9的中心朝法線方向延伸之中心軸作為中心之周方向)。各個噴出要素555係有底略圓筒狀的構件,從框體434的頂蓋部朝略鉛直下方延伸。各個噴出要素555的下端係位於比位於最下段(亦即最靠近-Z側)的基板9還下側。於各個噴出要素555的側面設置有朝向載置有基板9的方向(亦即朝向將上面所說明的中心軸作為中心之徑方向內側方向)之複數個噴出口。在圖6所示的例子中,於各個噴出要素555設置有三個噴出口,該三個噴出口係在上下方向中位於與排列於上下方向的四片基板9的三個間隙略相同的位置。排氣埠554係配置於比四片基板9還下方。在圖6所示的例子中,複數個排氣埠554係以略等角度間隔排列於周方向。The side ejection portion 553 includes a plurality of ejection elements 555, and the plurality of ejection elements 555 are arranged at approximately equal angular intervals in the circumferential direction around the substrate 9 (that is, the central axis extending in the normal direction through the center of the substrate 9). as the circumferential direction of the center). Each of the ejection elements 555 is a member having a substantially cylindrical bottom, and extends from the top cover portion of the frame body 434 to a substantially vertical downward direction. The lower end of each ejection element 555 is located on the lower side than the substrate 9 located at the lowermost stage (ie, closest to the -Z side). A plurality of ejection ports are provided on the side surfaces of each ejection element 555 toward the direction in which the substrate 9 is placed (that is, toward the inner direction in the radial direction with the center axis as the center described above). In the example shown in FIG. 6 , each of the ejection elements 555 is provided with three ejection ports, which are located in the vertical direction at approximately the same positions as the three gaps of the four substrates 9 arranged in the vertical direction. The exhaust port 554 is arranged below the four substrates 9 . In the example shown in FIG. 6 , the plurality of exhaust ports 554 are arranged in the circumferential direction at approximately equal angular intervals.

在載置單元40中,當藉由第一擋門432以及第二擋門433閉鎖第一開口435以及第二開口436時,如上面所說明般,載置單元40的內部空間400係與索引區塊10的內部空間100以及搬運路徑23的內部空間230阻隔。在此狀態下,將閥581以及閥582開閥,對載置單元40供給惰性氣體,吸引機構59經由排氣埠554進行吸引,藉此載置單元40的內部空間400的空氣被置換成惰性氣體,載置單元40的內部空間400變成惰性氣體氛圍。換言之,載置單元40的內部空間400係變成氧濃度比大氣還低的低氧氛圍。載置單元40的氧濃度係例如為100ppm以下。In the placement unit 40, when the first opening 435 and the second opening 436 are closed by the first shutter 432 and the second shutter 433, as described above, the inner space 400 of the placement unit 40 is connected to the index The inner space 100 of the block 10 and the inner space 230 of the conveyance path 23 are blocked. In this state, the valve 581 and the valve 582 are opened, the inert gas is supplied to the placement unit 40, and the suction mechanism 59 sucks through the exhaust port 554, whereby the air in the inner space 400 of the placement unit 40 is replaced with inert gas gas, the inner space 400 of the mounting unit 40 becomes an inert gas atmosphere. In other words, the inner space 400 of the placement unit 40 becomes a low-oxygen atmosphere with an oxygen concentration lower than that of the atmosphere. The oxygen concentration of the mounting unit 40 is, for example, 100 ppm or less.

具體而言,當閥581開閥時,從中央噴出部551朝略鉛直下方供給惰性氣體。來自中央噴出部551的惰性氣體係從中央噴出部551朝位於最上段(亦即最靠近+Z側)的基板9往略鉛直下方流動,並沿著該基板9的上表面朝徑方向外側方向流動。在圖6中以箭頭顯示惰性氣體的流動。從周緣噴出部552朝徑方向外側方向且朝向下方供給惰性氣體。來自周緣噴出部552的惰性氣體的上面所說明的供給方向係例如藉由將周緣噴出部552的噴出口朝向徑方向外側方向且朝向下方而實現。來自周緣噴出部552的惰性氣體係通過最上段的基板9的周緣附近朝下方流動。藉此,存在於基板9的上方以及側方之空氣係朝比基板9還下方流動,並經由排氣埠554朝載置單元40的外部排出。Specifically, when the valve 581 is opened, the inert gas is supplied from the central ejection portion 551 to a slightly vertically downward direction. The inert gas system from the central ejection portion 551 flows from the central ejection portion 551 toward the substrate 9 located at the uppermost stage (ie, the closest to the +Z side) slightly vertically downward, and flows radially outward along the upper surface of the substrate 9 . . The flow of inert gas is shown by arrows in FIG. 6 . The inert gas is supplied from the peripheral discharge portion 552 toward the outer side in the radial direction and toward the lower side. The above-described supply direction of the inert gas from the peripheral discharge portion 552 is achieved by, for example, orienting the discharge port of the peripheral discharge portion 552 toward the outer direction in the radial direction and downward. The inert gas system from the peripheral ejection portion 552 flows downward through the vicinity of the peripheral edge of the uppermost substrate 9 . Thereby, the air which exists above and the side of the board|substrate 9 flows below the board|substrate 9, and is exhausted to the outside of the mounting unit 40 via the exhaust port 554.

從周緣噴出部552噴出的惰性氣體的流速係例如比從中央噴出部551噴出的惰性氣體的流速還大。藉此,能快速地將比基板9還上方的空氣朝排氣埠554推流。此外,將從中央噴出部551噴出的惰性氣體的流速設定成較小,藉此能抑制因為來自中央噴出部551的惰性氣體導致最上段的基板9振動。The flow velocity of the inert gas jetted from the peripheral jetting portion 552 is, for example, larger than the flow velocity of the inert gas jetted from the central jetting portion 551 . Thereby, the air above the substrate 9 can be quickly pushed toward the exhaust port 554 . In addition, by setting the flow velocity of the inert gas ejected from the central ejection portion 551 to be small, the vibration of the uppermost substrate 9 due to the inert gas from the central ejection portion 551 can be suppressed.

此外,在載置單元40中,當閥582開閥時,從側方噴出部553的複數個噴出要素555朝徑方向內側方向供給惰性氣體。來自側方噴出部553的惰性氣體係通過排列於上下方向的四片基板9的間隙從基板9的周圍朝下方流動。藉此,存在於複數個基板9之間的空氣係朝比基板9還下方流動,並經由排氣埠554朝載置單元40的外部排出。In addition, in the mounting unit 40, when the valve 582 is opened, the inert gas is supplied from the plurality of ejection elements 555 of the side ejection portion 553 toward the inner direction in the radial direction. The inert gas system from the side ejection portion 553 flows downward from the periphery of the substrate 9 through the gap between the four substrates 9 arranged in the vertical direction. As a result, the air existing between the plurality of substrates 9 flows below the substrates 9 and is exhausted to the outside of the placement unit 40 through the exhaust port 554 .

如圖2所示,基板處理裝置1係進一步具備有第二氣體供給部56,第二氣體供給部56係對索引區塊10供給惰性氣體(例如氮或氬)。第二氣體供給部56係具備有氣體噴出部561以及排氣埠562。氣體噴出部561係配置於索引區塊10的頂蓋部附近,並經由未圖示的閥連接至惰性氣體供給源58(參照圖6)。排氣埠562係連接至吸引機構59(參照圖6)。此外,氣體噴出部561亦可連接至與惰性氣體供給源58不同的其他的惰性氣體供給源。此外,排氣埠562亦可連接至與吸引機構59不同的其他的吸引機構。As shown in FIG. 2 , the substrate processing apparatus 1 further includes a second gas supply unit 56 , and the second gas supply unit 56 supplies an inert gas (eg, nitrogen or argon) to the index block 10 . The second gas supply part 56 includes a gas ejection part 561 and an exhaust port 562 . The gas ejection portion 561 is disposed near the top cover portion of the index block 10, and is connected to the inert gas supply source 58 (see FIG. 6 ) via a valve not shown. The exhaust port 562 is connected to the suction mechanism 59 (refer to FIG. 6 ). In addition, the gas ejection part 561 may be connected to another inert gas supply source different from the inert gas supply source 58 . In addition, the exhaust port 562 may also be connected to other suction mechanisms different from the suction mechanism 59 .

氣體噴出部561係位於比索引機器人12還上方,且遍及索引機器人10的上表面的略整體而設置。氣體噴出部561係例如為FFU。排氣埠562係配置於索引區塊10的側壁的底面附近的部位(或者底面)。The gas ejection portion 561 is located above the index robot 12 , and is provided over almost the entire upper surface of the index robot 10 . The gas ejection unit 561 is, for example, an FFU. The exhaust port 562 is arranged at a portion (or a bottom surface) near the bottom surface of the side wall of the index block 10 .

在載置單元40中,當藉由第二擋門433閉鎖第二開口436時,如上面所說明般,索引區塊10的內部空間100係與載置單元40的內部空間400以及搬運路徑23的內部空間230阻隔。在此狀態下,上面所說明的閥被開閥,從氣體噴出部561對索引區塊10供給惰性氣體,吸引機構59經由排氣埠562進行吸引,藉此索引區塊10的內部空間100的空氣被置換成惰性氣體,載置單元40的內部空間400變成惰性氣體氛圍。換言之,索引區塊10的內部空間100係設定成氧濃度比大氣還低的低氧氛圍。索引區塊10的氧濃度係例如為100ppm以下。In the placing unit 40, when the second opening 436 is closed by the second shutter 433, as described above, the inner space 100 of the index block 10 is connected to the inner space 400 of the placing unit 40 and the conveying path 23 The inner space 230 is blocked. In this state, the valve described above is opened, the inert gas is supplied to the index block 10 from the gas ejection part 561 , and the suction mechanism 59 sucks through the exhaust port 562 , whereby the inner space 100 of the index block 10 is sucked. The air is replaced with an inert gas, and the inner space 400 of the mounting unit 40 becomes an inert gas atmosphere. In other words, the inner space 100 of the index block 10 is set to a hypoxic atmosphere with an oxygen concentration lower than that of the atmosphere. The oxygen concentration of the index block 10 is, for example, 100 ppm or less.

從第二氣體供給部56供給惰性氣體係在基板處理裝置1對基板9進行處理(後述)之期間持續地進行,索引區塊10的內部空間100係維持於低氧氛圍。在載置單元40中開放第二開口436之情形中,從第一氣體供給部55以及第二氣體供給部56供給惰性氣體,藉此將載置單元40的內部空間400以及索引區塊10的內部空間100設定成低氧氛圍。The supply of the inert gas system from the second gas supply unit 56 is continuously performed while the substrate processing apparatus 1 processes the substrate 9 (described later), and the inner space 100 of the index block 10 is maintained in a low-oxygen atmosphere. In the case where the second opening 436 is opened in the placement unit 40 , the inert gas is supplied from the first gas supply part 55 and the second gas supply part 56 , whereby the inner space 400 of the placement unit 40 and the inner space of the index block 10 are supplied with inert gas. The inner space 100 is set to a hypoxic atmosphere.

基板處理裝置1係進一步具備有空氣供給部57,空氣供給部57係對處理區塊20的搬運路徑23供給清淨的空氣。空氣供給部57係具備有空氣噴出部571以及排氣埠572(參照圖1)。空氣噴出部571係配置於搬運路徑23的頂蓋部附近,將配置有基板處理裝置1之無塵室內的清淨的空氣供給至搬運路徑23的內部空間230。空氣噴出部571係位於比中心機器人22還上方,並遍及搬運路徑23的上表面的略整體地設置。空氣噴出部571係例如為FFU。排氣埠572係在搬運路徑23的+X側的端部中配置於搬運路徑23的側壁的底面附近的部位(或者底面)。排氣埠572係連接至未圖示的吸引機構。The substrate processing apparatus 1 further includes an air supply unit 57 , and the air supply unit 57 supplies clean air to the conveyance path 23 of the processing block 20 . The air supply part 57 is provided with the air ejection part 571 and the exhaust port 572 (refer FIG. 1). The air ejection unit 571 is disposed near the top cover of the conveyance path 23 , and supplies clean air in the clean room in which the substrate processing apparatus 1 is disposed to the inner space 230 of the conveyance path 23 . The air ejection part 571 is located above the center robot 22 , and is provided almost entirely over the upper surface of the conveyance path 23 . The air ejection unit 571 is, for example, an FFU. The exhaust port 572 is arranged at a portion (or a bottom surface) near the bottom surface of the side wall of the conveyance path 23 among the ends on the +X side of the conveyance path 23 . The exhaust port 572 is connected to an unillustrated suction mechanism.

在處理區塊20中,從空氣噴出部571對搬運路徑23供給清淨的空氣,並經由排氣埠572進行吸引,藉此於搬運路徑23的內部空間230形成有從-X側朝向+X側之空氣的下降氣流。從空氣供給部57供給空氣係在基板處理裝置1對基板9進行處理(後述)之期間持續地進行,處理區塊20的搬運路徑23的內部空間230係維持於大氣氛圍(詳細而言為潔淨氣體氛圍)。In the processing block 20, clean air is supplied to the conveyance path 23 from the air ejection part 571, and is sucked through the exhaust port 572, whereby the inner space 230 of the conveyance path 23 is formed with air from the −X side to the +X side. Downdraft of air. The air supply from the air supply unit 57 is continuously performed while the substrate processing apparatus 1 is processing the substrate 9 (described later), and the internal space 230 of the conveyance path 23 of the processing block 20 is maintained in the atmosphere (specifically, a clean environment). gas atmosphere).

在基板處理裝置1中,由於搬運路徑23的內部空間230為大氣氛圍,因此如上面所說明般,搬運路徑23的氧濃度係比被維持在低氧氛圍的索引區塊10的氧濃度還高。此外,如上面所說明般,搬運路徑23的氧濃度係比被設定成低氧氛圍的載置單元40的氧濃度還高。此外,搬運路徑23的氣壓係被維持成比各個處理單元21的氣壓還高。藉此,在基板9相對於各個處理單元21搬入以及搬出時,抑制處理單元21內的氛圍(例如藥液氛圍)等進入至搬運路徑23。此外,索引區塊10以及載置單元40的氣壓係被維持成比搬運路徑23的氣壓還高。藉此,抑制搬運路徑23內的大氣氛圍進入至載置單元40以及索引區塊10。處理單元21係例如為負壓,搬運路徑23、載置單元40以及索引區塊10係例如為正壓。In the substrate processing apparatus 1, since the inner space 230 of the conveyance path 23 is in the atmosphere, as described above, the oxygen concentration of the conveyance path 23 is higher than the oxygen concentration of the index block 10 maintained in the low oxygen atmosphere . In addition, as described above, the oxygen concentration of the conveyance path 23 is higher than the oxygen concentration of the placement unit 40 set in the low-oxygen atmosphere. In addition, the air pressure system of the conveyance path 23 is maintained to be higher than the air pressure of each processing unit 21 . Thereby, when the substrates 9 are carried in and out of the respective processing units 21 , the atmosphere (eg, chemical liquid atmosphere) in the processing units 21 is suppressed from entering the conveyance path 23 . In addition, the air pressure system of the index block 10 and the placement unit 40 is maintained to be higher than the air pressure of the conveyance path 23 . Thereby, the atmospheric atmosphere in the conveyance path 23 is suppressed from entering the placement unit 40 and the index block 10 . The processing unit 21 is, for example, a negative pressure, and the conveying path 23, the placing unit 40, and the index block 10 are, for example, a positive pressure.

圖7係顯示控制部60所具備的電腦8的構成之圖。電腦8係具備有處理器81、記憶體82、輸入輸出部83以及匯流排84之通常的電腦。匯流排84係訊號電路,用以連接處理器81、記憶體82以及輸入輸出部83。記憶體82係記憶各種程式以及各種資訊。處理器81係依循記憶於記憶體82的程式等,一邊利用記憶體82等一邊執行各種處理(例如數值計算)。輸入輸出部83係具備有:鍵盤85以及滑鼠86,係接收操作者的輸入;顯示器87,係顯示來自處理器81的輸出等;以及發送部88,係發送來自處理器81的輸出等。此外,控制部60亦可為可程式邏輯控制器(PLC;Programmable Logic Controller)或者電路基板等。FIG. 7 is a diagram showing the configuration of the computer 8 included in the control unit 60 . The computer 8 is a normal computer including a processor 81 , a memory 82 , an input/output unit 83 , and a bus 84 . The bus bar 84 is a signal circuit for connecting the processor 81 , the memory 82 and the input/output part 83 . The memory 82 stores various programs and various information. The processor 81 executes various kinds of processing (for example, numerical calculation) while using the memory 82 and the like in accordance with a program or the like stored in the memory 82 . The input/output unit 83 includes a keyboard 85 and a mouse 86 for receiving operator input; a display 87 for displaying output from the processor 81 and the like; In addition, the control unit 60 may also be a programmable logic controller (PLC; Programmable Logic Controller), a circuit board, or the like.

在基板處理裝置1中,藉由控制部60控制索引機器人12、中心機器人22、處理單元21、第一氣體供給部55、第二氣體供給部56以及空氣供給部57等各個構成。在本實施形態中,控制部60係個別地控制從第一氣體供給部55朝載置單元40供給惰性氣體以及從第二供給部56朝索引區塊10供給惰性氣體。此外,控制部60亦控制第一遮蔽部51的第一擋門移動機構437以及第二遮蔽部52的第二擋門移動機構438。In the substrate processing apparatus 1 , each of the index robot 12 , the center robot 22 , the processing unit 21 , the first gas supply unit 55 , the second gas supply unit 56 , and the air supply unit 57 is controlled by the control unit 60 . In the present embodiment, the control unit 60 individually controls the supply of the inert gas from the first gas supply unit 55 to the mounting unit 40 and the supply of the inert gas from the second supply unit 56 to the index block 10 . In addition, the control unit 60 also controls the first shutter moving mechanism 437 of the first shielding portion 51 and the second shutter moving mechanism 438 of the second shielding portion 52 .

接著,參照圖8A以及圖8B說明基板處理裝置1對於基板9的處理的流程的一例。如上面所說明般,在基板9的處理中的基板處理裝置1中,索引區塊10的內部空間100係藉由第二氣體供給部56維持在低氧氛圍,搬運路徑23的內部空間230係藉由空氣供給部57維持在大氣氛圍。此外,在載置單元40中,僅在進行基板9之搬入以及搬出時開放第一開口435或者第二開口436,在其他情形中第一開口435以及第二開口436係被第一擋門432以及第二擋門433閉鎖。Next, an example of the flow of processing of the substrate 9 by the substrate processing apparatus 1 will be described with reference to FIGS. 8A and 8B . As described above, in the substrate processing apparatus 1 during processing of the substrate 9, the inner space 100 of the index block 10 is maintained in a low-oxygen atmosphere by the second gas supply unit 56, and the inner space 230 of the conveyance path 23 is The atmosphere is maintained by the air supply unit 57 . In addition, in the mounting unit 40, the first opening 435 or the second opening 436 is opened only when the substrate 9 is carried in and out, and in other cases, the first opening 435 and the second opening 436 are closed by the first shutter 432. And the second door 433 is locked.

在基板處理裝置1中,首先,在載置單元40中藉由第一擋門432以及第二擋門433閉鎖第一開口435以及第二開口436的狀態下(亦即載置單元40的內部空間400密閉的狀態下),從第一氣體供給部55對載置單元40的內部空間400供給對性氣體,將載置單元40設定成低氧氛圍(步驟S11)。In the substrate processing apparatus 1 , first, in the mounting unit 40 in a state where the first opening 435 and the second opening 436 are closed by the first shutter 432 and the second shutter 433 (that is, the inside of the mounting unit 40 ) When the space 400 is sealed), the opposite gas is supplied from the first gas supply unit 55 to the inner space 400 of the placement unit 40, and the placement unit 40 is set to a low-oxygen atmosphere (step S11).

步驟S11中來自第一氣體供給部55的惰性氣體的供給流量係例如為1000公升/分鐘以下。直至載置單元40被設定成期望的低氧氛圍為止所需的時間係例如為30秒以內。在載置單元40中,在基板處理裝置1中對基板9進行處理的期間,持續地進行從第一氣體供給部55供給惰性氣體。然而,第一氣體供給部55所為之惰性氣體的供給流量係如後面所說明般適當地變更。The supply flow rate of the inert gas from the first gas supply unit 55 in step S11 is, for example, 1000 liters/minute or less. The time required until the placement unit 40 is set to a desired low-oxygen atmosphere is, for example, within 30 seconds. In the mounting unit 40 , the supply of the inert gas from the first gas supply unit 55 is continuously performed while the substrate 9 is being processed in the substrate processing apparatus 1 . However, the supply flow rate of the inert gas by the first gas supply unit 55 is appropriately changed as described later.

當載置單元40變成低氧氛圍時,藉由索引機器人12從承載器95搬出未處理的基板9(步驟S12)。如上面所說明般,由於承載器95以及索引區塊10為低氧氛圍,因此在基板9從承載器95搬出時承載器95以及索引區塊10的氧濃度不會上升。實際上,雖然在基板處理裝置1中從承載器95搬出兩片基板9且對兩片基板9並行地施予後述的處理,但是在以下中著眼一片基板9並說明針對一片基板9的處理。When the placement unit 40 becomes the low-oxygen atmosphere, the unprocessed substrate 9 is carried out from the carrier 95 by the index robot 12 (step S12). As described above, since the carrier 95 and the index block 10 are in a low-oxygen atmosphere, the oxygen concentration of the carrier 95 and the index block 10 does not increase when the substrate 9 is unloaded from the carrier 95 . Actually, in the substrate processing apparatus 1 , two substrates 9 are unloaded from the carrier 95 and the two substrates 9 are processed in parallel.

接著,藉由控制部60驅動第二擋門移動機構438,第二擋門433朝下方移動並開放第二開口436(步驟S13)。如上面所說明般,與索引區塊10同樣地,由於載置單元40的內部空間400係設定成低氧氛圍,因此不會因為第二開口436的開放而使索引區塊10的氧濃度上升。Next, the second shutter moving mechanism 438 is driven by the control unit 60, and the second shutter 433 is moved downward to open the second opening 436 (step S13). As described above, similarly to the index block 10 , since the inner space 400 of the placement unit 40 is set to a low-oxygen atmosphere, the oxygen concentration of the index block 10 does not increase due to the opening of the second opening 436 . .

當第二開口436開放時,藉由索引機器人12將未處理的基板9經由第二開口436搬入至載置單元40(步驟S14)。基板9係被載置單元40內的下側的基板支撐部431支撐,索引機器人12係從載置單元40退出。接著,藉由控制部60驅動第二擋門移動機構438,第二擋門433係朝上方移動並閉鎖第二開口436(步驟S15)。藉此,載置單元40的內部空間400係被密閉。如上面所說明般,載置單元40的低氧氛圍被維持。當結束步驟S15時,藉由控制部60控制第一氣體供給部55,藉此從第一氣體供給部55供給至載置單元40之惰性氣體的供給流量係減少,例如為100公升/分鐘。When the second opening 436 is opened, the unprocessed substrate 9 is carried into the placement unit 40 through the second opening 436 by the index robot 12 (step S14). The substrate 9 is supported by the lower substrate support portion 431 in the placement unit 40 , and the index robot 12 is withdrawn from the placement unit 40 . Next, the second shutter moving mechanism 438 is driven by the control unit 60, and the second shutter 433 is moved upward to close the second opening 436 (step S15). Thereby, the internal space 400 of the mounting unit 40 is hermetically sealed. As described above, the low-oxygen atmosphere of the placement unit 40 is maintained. When step S15 is completed, the control unit 60 controls the first gas supply unit 55, whereby the supply flow rate of the inert gas supplied from the first gas supply unit 55 to the mounting unit 40 is reduced, for example, to 100 liters/min.

當閉鎖第二開口436時,藉由控制部60驅動第一擋門移動機構437,第一擋門432係朝下方移動並開放第一開口435(步驟S16)。如上面所說明般,雖然在開放第一開口435後亦持續地進行從第一氣體供給部55朝載置單元40供給惰性氣體,但搬運路徑23內的大氣氛圍係因為擴散等進入至載置單元40內。When the second opening 436 is closed, the first shutter moving mechanism 437 is driven by the control unit 60, and the first shutter 432 is moved downward to open the first opening 435 (step S16). As described above, the inert gas is continuously supplied from the first gas supply unit 55 to the mounting unit 40 even after the first opening 435 is opened, but the atmosphere in the conveyance path 23 enters the mounting unit due to diffusion or the like. within unit 40.

當開放第一開口435時,藉由中心機器人22將載置單元40內的未處理的基板9經由第一開口435從載置單元40搬出(步驟S17)。接著,藉由控制部60驅動第一擋門移動機構437,第一擋門432係朝上方移動並閉鎖第一開口435(步驟S18)。之後,藉由第一氣體供給部55將載置單元40設定成低氧氛圍,並因應需要藉由索引機器人12搬入新的未處理的基板9。When the first opening 435 is opened, the unprocessed substrate 9 in the placement unit 40 is carried out from the placement unit 40 through the first opening 435 by the center robot 22 (step S17 ). Next, the first shutter moving mechanism 437 is driven by the control unit 60, and the first shutter 432 is moved upward to close the first opening 435 (step S18). After that, the placing unit 40 is set to a low-oxygen atmosphere by the first gas supply unit 55, and a new unprocessed substrate 9 is loaded by the indexing robot 12 as required.

從載置單元40搬出的基板9係被搬入至處理單元21(步驟S19)。在處理單元21中,處理部24對基板9進行處理(步驟S20)。具體而言,從噴嘴244對旋轉中的基板9的上表面91供給藥液(例如蝕刻液等),進行基板9的藥液處理。接著,從噴嘴244或者從未圖示的其他噴嘴對基板9的上表面91供給清洗液(例如純水等),進行基板9的清洗處理。之後,增大基板9的旋轉速度,進行基板9的乾燥處理。The substrate 9 carried out from the mounting unit 40 is carried into the processing unit 21 (step S19). In the processing unit 21, the processing unit 24 processes the substrate 9 (step S20). Specifically, a chemical solution (for example, an etching solution or the like) is supplied from the nozzle 244 to the upper surface 91 of the rotating substrate 9 , and the chemical solution treatment of the substrate 9 is performed. Next, a cleaning liquid (for example, pure water or the like) is supplied to the upper surface 91 of the substrate 9 from the nozzle 244 or another nozzle not shown, and the cleaning process of the substrate 9 is performed. After that, the rotational speed of the substrate 9 is increased, and the drying process of the substrate 9 is performed.

當結束處理單元21中的基板9的處理時,藉由中心機器人22從處理單元21搬出處理完畢的基板9(步驟S21)。接著,藉由控制部60驅動第一擋門移動機構437,第一擋門432係朝下方移動並開放第一開口435(步驟S22)。此時,第二開口436係被第二擋門433閉鎖。接著,藉由中心機器人22將處理完畢的基板9經由第一開口435搬入至載置單元40(步驟S23)。處理完畢的基板9係被支撐於載置單元40內的上側的基板支撐部431,中心機器人22係從載置單元40退出。之後,藉由控制部60驅動第一擋門移動機構437,第一擋門432係朝上方移動並閉鎖第一開口435(步驟S24)。藉此,載置單元40的內部空間400係被密閉。When the processing of the substrate 9 in the processing unit 21 is completed, the processed substrate 9 is carried out from the processing unit 21 by the center robot 22 (step S21). Next, the first shutter moving mechanism 437 is driven by the control unit 60, and the first shutter 432 is moved downward to open the first opening 435 (step S22). At this time, the second opening 436 is blocked by the second blocking door 433 . Next, the processed substrate 9 is carried into the placement unit 40 through the first opening 435 by the center robot 22 (step S23). The processed substrate 9 is supported by the upper substrate support portion 431 in the placement unit 40 , and the center robot 22 is withdrawn from the placement unit 40 . After that, the first shutter moving mechanism 437 is driven by the control unit 60, and the first shutter 432 is moved upward to close the first opening 435 (step S24). Thereby, the internal space 400 of the mounting unit 40 is hermetically sealed.

當閉鎖第一開口435時,藉由控制部60控制第一氣體供給部55,從第一氣體供給部55供給至載置單元40的內部空間400之惰性氣體的流量係增大。例如,惰性氣體的供給流量係1000公升/分鐘以下。接著,該供給流量的惰性氣體的供給係進行預定時間,藉此載置單元40的內部空間400的氧濃度急速地降低而將載置單元40設定成低氧氛圍(步驟S25)。例如,直至載置單元40被設定成期望的低氧氛圍為止所需的時間係30秒以內。When the first opening 435 is closed, the control unit 60 controls the first gas supply unit 55 to increase the flow rate of the inert gas supplied from the first gas supply unit 55 to the inner space 400 of the mounting unit 40 . For example, the supply flow rate of the inert gas is 1000 liters/minute or less. Next, by supplying the inert gas at the supply flow rate for a predetermined period of time, the oxygen concentration in the inner space 400 of the placement unit 40 is rapidly reduced, and the placement unit 40 is set to a low-oxygen atmosphere (step S25 ). For example, the time required until the placement unit 40 is set to a desired low-oxygen atmosphere is within 30 seconds.

當載置單元40變成低氧氛圍時,藉由控制部60驅動第二擋門移動機構438,第二擋門433係朝下方移動並開放第二開口436(步驟S26)。如上面所說明般,與索引區塊10同樣地,由於載置單元40的內部空間400被設定成低氧氛圍,因此不會因為第二開口436的開放而使索引區塊10的氧濃度上升。在步驟S26中,從第一氣體供給部55供給至載置單元40的惰性氣體的供給流量係與步驟S25同樣。如此,在載置單元40變成低氧氛圍後亦維持惰性氣體的供給流量,藉此與停止供給惰性氣體的情形等相比能抑制載置單元40的內壓降低。結果,能防止或者抑制外氣等進入至載置單元40而導致氧濃度上升。When the placing unit 40 becomes the low-oxygen atmosphere, the control unit 60 drives the second shutter moving mechanism 438, and the second shutter 433 moves downward to open the second opening 436 (step S26). As described above, similarly to the index block 10 , since the inner space 400 of the placement unit 40 is set to a low-oxygen atmosphere, the oxygen concentration of the index block 10 does not increase due to the opening of the second opening 436 . . In step S26, the supply flow rate of the inert gas supplied from the first gas supply unit 55 to the mounting unit 40 is the same as that in step S25. In this way, the supply flow rate of the inert gas is maintained even after the placement unit 40 is in a low-oxygen atmosphere, whereby the decrease in the internal pressure of the placement unit 40 can be suppressed compared to the case where the supply of the inert gas is stopped. As a result, it is possible to prevent or suppress an increase in the oxygen concentration due to the entry of outside air or the like into the mounting unit 40 .

當開放第二開口436時,藉由索引機器人12將處理完畢的基板9經由第二開口436從載置單元40搬出(步驟S27)。接著,藉由控制部60驅動第二擋門移動機構438,第二擋門433係朝上方移動並閉鎖第二開口436(步驟S28)。藉此,載置單元40的內部空間400係被密閉。當結束步驟S28時,藉由控制部60控制第一氣體供給部55,藉此從第一氣體供給部55供給至載置單元40之惰性氣體的供給流量係減少,例如為100公升/分鐘。When the second opening 436 is opened, the processed substrate 9 is carried out from the placement unit 40 through the second opening 436 by the index robot 12 (step S27 ). Next, the second shutter moving mechanism 438 is driven by the control unit 60, and the second shutter 433 is moved upward to close the second opening 436 (step S28). Thereby, the internal space 400 of the mounting unit 40 is hermetically sealed. When step S28 is completed, the control unit 60 controls the first gas supply unit 55, whereby the supply flow rate of the inert gas supplied from the first gas supply unit 55 to the mounting unit 40 is reduced, for example, to 100 liters/min.

從載置單元40搬出的處理完畢的基板9係被索引機器人12搬入至承載器95,藉此結束基板9的一連串的處理(步驟S29)。如上面所說明般,由於承載器95以及索引區塊10為低氧氛圍,因此在將基板9搬入至承載器95時承載器95以及索引區塊10的氧濃度不會上升。The processed substrates 9 carried out from the placement unit 40 are carried into the carrier 95 by the index robot 12 , thereby ending a series of processing of the substrates 9 (step S29 ). As described above, since the carrier 95 and the index block 10 are in a low-oxygen atmosphere, the oxygen concentration of the carrier 95 and the index block 10 does not increase when the substrate 9 is loaded into the carrier 95 .

如上面所說明般,基板處理裝置1係具備有處理區塊20、索引區塊10、載置單元40以及第一遮蔽部51。於處理區塊20配置有:處理單元21,係處理基板9;以及第一搬運機器人(亦即中心機器人22),係進行基板9相對於處理單元21之搬入以及搬出。於索引區塊10配置有第二搬運機器人(亦即索引機器人12),第二搬運機器人係進行基板9相對於可收容複數個基板9的承載器95之搬入以及搬出。載置單元40係設置於處理區塊20與索引區塊10之間的連接部。載置單元40係保持從索引區塊10被傳遞至中心機器人22的未處理的基板9。此外,載置單元40係保持從中心機器人22被傳遞至索引區塊10的處理完畢的基板9。第一遮蔽部51係可阻隔氧濃度比大氣還低的低氧氛圍的索引區塊10以及載置單元40與搬運路徑23之間的氣體的移動,搬運路徑23係在處理區塊20中連接處理單元21與載置單元40。As described above, the substrate processing apparatus 1 includes the processing block 20 , the index block 10 , the mounting unit 40 , and the first shielding portion 51 . Disposed in the processing block 20 are: a processing unit 21 for processing the substrates 9 ; A second transfer robot (ie, the index robot 12 ) is disposed in the index block 10 , and the second transfer robot carries out the loading and unloading of the substrates 9 with respect to the carrier 95 that can accommodate a plurality of substrates 9 . The mounting unit 40 is disposed at the connection portion between the processing block 20 and the index block 10 . The placement unit 40 holds the unprocessed substrate 9 transferred from the index block 10 to the center robot 22 . In addition, the placement unit 40 holds the processed substrate 9 transferred from the center robot 22 to the index block 10 . The first shielding portion 51 can block the movement of the gas between the index block 10 and the placement unit 40 in a low oxygen atmosphere with an oxygen concentration lower than that of the atmosphere, and the conveyance path 23 connected to the processing block 20 . The processing unit 21 and the placing unit 40 .

如此,在基板處理裝置1中,能將較長時間載置基板9的空間之索引區塊10以及載置單元40設定成低氧氛圍,藉此能抑制基板處理裝置1中的基板9的氧化。此外,由於能將與索引區塊10的內部空間100連接之承載器95的內部亦維持在低氧氛圍,因此亦能抑制承載器95內的基板9的氧化。In this way, in the substrate processing apparatus 1, the index block 10 and the mounting unit 40 in the space where the substrate 9 is placed for a long time can be set to a low oxygen atmosphere, whereby the oxidation of the substrate 9 in the substrate processing apparatus 1 can be suppressed. . In addition, since the inside of the susceptor 95 connected to the inner space 100 of the index block 10 can also be maintained in a low-oxygen atmosphere, oxidation of the substrate 9 in the susceptor 95 can also be suppressed.

如上面所說明般,在基板理裝置1中,由於能將索引區塊10以及載置單元40設定成低氧氛圍,因此基板處理裝置1的構造尤其適用於搬運路徑23的氧濃度比索引區塊10的氧濃度以及載置單元40的氧濃度還高的基板處理裝置。例如,基板處理裝置1的構造尤其適用於搬運路徑23為大氣氛圍的基板處理裝置。As described above, in the substrate processing apparatus 1, since the index block 10 and the placement unit 40 can be set to a low-oxygen atmosphere, the structure of the substrate processing apparatus 1 is particularly suitable for the oxygen concentration ratio index area of the conveyance path 23 A substrate processing apparatus in which the oxygen concentration of the block 10 and the oxygen concentration of the mounting unit 40 are still high. For example, the structure of the substrate processing apparatus 1 is particularly suitable for a substrate processing apparatus in which the conveyance path 23 is in the atmosphere.

如上面所說明般,第一開口435係用以連接搬運路徑23的內部空間230與載置單元40的內部空間400之開口。較佳為第一遮蔽部51係具備有用以將第一開口435予以開閉之門體(亦即第一擋門432)。藉此,能以簡單的構造適當地阻隔載置單元40與搬運路徑23之間的氣體的移動。As described above, the first opening 435 is an opening for connecting the inner space 230 of the conveyance path 23 and the inner space 400 of the placement unit 40 . Preferably, the first shielding portion 51 is provided with a door body (ie, the first blocking door 432 ) for opening and closing the first opening 435 . Thereby, the movement of the gas between the mounting unit 40 and the conveyance path 23 can be suitably blocked with a simple structure.

如上面所說明般,較佳為基板處理裝置1係進一步具備有第一氣體供給部55,第一氣體供給部55係藉由對載置單元40供給惰性氣體而將載置單元40設定成低氧氛圍。藉此,能容易地將載置單元40設定成低氧氛圍。As described above, it is preferable that the substrate processing apparatus 1 further includes the first gas supply unit 55 , and the first gas supply unit 55 sets the placement unit 40 to a low level by supplying the inert gas to the placement unit 40 . oxygen atmosphere. Thereby, the placement unit 40 can be easily set to a low-oxygen atmosphere.

如上面所說明般,較佳為基板處理裝置1係進一步具備有第二遮蔽部52,第二遮蔽部52係可阻隔索引區塊10與載置單元40之間的氣體的移動。藉此,能容易地維持索引區塊10中的低氧氛圍。As described above, the substrate processing apparatus 1 is preferably further provided with the second shielding portion 52 , and the second shielding portion 52 can block the movement of the gas between the index block 10 and the placement unit 40 . Thereby, the low-oxygen atmosphere in the index block 10 can be easily maintained.

如上面所說明般,第二開口436係用以連接索引區塊10的內部空間100與載置單元40的內部空間400之開口。較佳為第二遮蔽部52係具備有用以將第一開口435予以開閉之門體(亦即第二擋門433)。藉此,能以簡單的構造適當地阻隔載置單元40與索引區塊10之間的氣體的移動。As described above, the second opening 436 is an opening for connecting the inner space 100 of the index block 10 and the inner space 400 of the placement unit 40 . Preferably, the second shielding portion 52 is provided with a door body (ie, the second blocking door 433 ) for opening and closing the first opening 435 . Thereby, the movement of the gas between the mounting unit 40 and the index block 10 can be suitably blocked with a simple structure.

如上面所說明般,較佳為基板處理裝置1係進一步具備有第二氣體供給部56,第二氣體供給部56係藉由對索引區塊10供給惰性氣體而將索引區塊10設定成低氧氛圍。藉此,能容易地將索引區塊10維持在低氧氛圍。As described above, the substrate processing apparatus 1 is preferably further provided with the second gas supply unit 56 , and the second gas supply unit 56 sets the index block 10 to be low by supplying the inert gas to the index block 10 . oxygen atmosphere. Thereby, the index block 10 can be easily maintained in a low-oxygen atmosphere.

如上面所說明般,基板處理裝置1係進一步具備有處理區塊20、索引區塊10、載置單元40、第一遮蔽部51、第二遮蔽部52、第一氣體供給部55、第二氣體供給部56以及控制部60。較佳為控制部60係個別地控制從第一氣體供給部55供給惰性氣體以及從第二氣體供給部56供給惰性氣體。藉此,能分別將索引區塊10與載置單元40設定成期望的低氧氛圍。此外,能將索引區塊10的氣壓設定成比載置單元40的氣壓還高,並能將載置單元40的氣壓設定成比搬運路徑23的氣壓還高。As described above, the substrate processing apparatus 1 further includes the processing block 20 , the index block 10 , the mounting unit 40 , the first shielding portion 51 , the second shielding portion 52 , the first gas supply portion 55 , and the second shielding portion 51 . Gas supply unit 56 and control unit 60 . Preferably, the control unit 60 individually controls the supply of the inert gas from the first gas supply unit 55 and the supply of the inert gas from the second gas supply unit 56 . Thereby, the index block 10 and the mounting unit 40 can be respectively set to a desired low-oxygen atmosphere. In addition, the air pressure of the index block 10 can be set higher than the air pressure of the placement unit 40 , and the air pressure of the placement unit 40 can be set higher than the air pressure of the conveyance path 23 .

如上面所說明般,基板處理裝置1係具備有處理區塊20、索引區塊10、載置單元40、具有第一擋門432的第一遮蔽部51、具有第二擋門433的第二遮蔽部52、第一氣體供給部55以及控制部60。控制部60係控制中心機器人22、索引機器人12、第一遮蔽部51、第二遮蔽部52以及第一氣體供給部55。較佳為,藉由控制部60的控制,在藉由第一擋門432以及第二擋門433閉鎖第一開口435以及第二開口436的狀態下將載置單元40設定成低氧氛圍後,開放第二開口436。接著,藉由索引機器人12將未處理的基板9經由第二開口436搬入至載置單元40。接著,藉由第二擋門433閉鎖第二開口436後,開放第一開口435。接著,藉由中心機器人22將未處理的基板9經由第一開口435從載置單元40搬出。藉此,能在將未處理的基板9從索引機器人12授受至中心機器人22時將索引區塊10適當地維持在低氧氛圍。As described above, the substrate processing apparatus 1 includes the processing block 20 , the index block 10 , the mounting unit 40 , the first shielding portion 51 including the first shutter 432 , and the second shutter having the second shutter 433 . The shielding part 52 , the first gas supply part 55 , and the control part 60 . The control unit 60 controls the center robot 22 , the index robot 12 , the first shielding unit 51 , the second shielding unit 52 , and the first gas supply unit 55 . Preferably, under the control of the control unit 60, the placing unit 40 is set to a low-oxygen atmosphere in a state where the first opening 435 and the second opening 436 are closed by the first shutter 432 and the second shutter 433. , the second opening 436 is opened. Next, the unprocessed substrate 9 is carried into the placement unit 40 through the second opening 436 by the index robot 12 . Next, after the second opening 436 is closed by the second blocking door 433 , the first opening 435 is opened. Next, the unprocessed substrate 9 is carried out from the placement unit 40 through the first opening 435 by the center robot 22 . Thereby, when the unprocessed substrate 9 is transferred from the index robot 12 to the center robot 22 , the index block 10 can be appropriately maintained in the low-oxygen atmosphere.

如上面所說明般,基板處理裝置1係具備有處理區塊20、索引區塊10、載置單元40、具有第一擋門432的第一遮蔽部51、具有第二擋門433的第二遮蔽部52、第一氣體供給部55以及控制部60。控制部60係控制中心機器人22、索引機器人12、第一遮蔽部51、第二遮蔽部52以及第一氣體供給部55。較佳為,藉由控制部60的控制,藉由第二擋門433閉鎖第二開口436,在開放第一開口435的狀態下藉由中心機器人22將處理完畢的基板9經由第一開口435搬入至載置單元40後,藉由第一擋門432閉鎖第一開口435。接著,在藉由第一擋門432以及第二擋門433閉鎖第一開口435以及第二開口436的狀態下將載置單元40設定成低氧氛圍後,開放第二開口436。接著,藉由索引機器人12將處理完畢的基板9經由第二開口436從載置單元40搬出。藉此,能在將處理完畢的基板9從中心機器人22授受至索引機器人12時將索引區塊10適當地維持在低氧氛圍。As described above, the substrate processing apparatus 1 includes the processing block 20 , the index block 10 , the mounting unit 40 , the first shielding portion 51 including the first shutter 432 , and the second shutter having the second shutter 433 . The shielding part 52 , the first gas supply part 55 , and the control part 60 . The control unit 60 controls the center robot 22 , the index robot 12 , the first shielding unit 51 , the second shielding unit 52 , and the first gas supply unit 55 . Preferably, under the control of the control unit 60 , the second opening 436 is closed by the second shutter 433 , and the processed substrate 9 is passed through the first opening 435 by the central robot 22 when the first opening 435 is opened. After being loaded into the placing unit 40 , the first opening 435 is closed by the first shutter 432 . Next, after setting the mounting unit 40 to a low-oxygen atmosphere in a state where the first opening 435 and the second opening 436 are closed by the first shutter 432 and the second shutter 433 , the second opening 436 is opened. Next, the processed substrate 9 is carried out from the placement unit 40 through the second opening 436 by the index robot 12 . This makes it possible to appropriately maintain the index block 10 in the low-oxygen atmosphere when the processed substrate 9 is transferred from the center robot 22 to the index robot 12 .

上面所說明的基板處理裝置1的基板處理方法係具備有下述工序:藉由索引機器人12將基板9從索引區塊10搬入至載置單元40(步驟S14);藉由中心機器人22將基板9從載置單元40搬出(步驟S17)並搬入至處理單元21(步驟S19);在處理單元21中對基板9進行處理(步驟S20);藉由中心機器人22將基板9從處理單元21搬出(步驟S21)並搬入至載置單元40(步驟S23);以及藉由索引機器人12將基板9從載置單元40搬出至索引區塊10(步驟S27)。並且,可阻隔氧濃度比大氣還低之低氧氛圍的索引區塊10以及載置單元40與搬運路徑23之間的氣體的移動,搬運路徑23係在處理區塊20中連接處理單元21與載置單元40。如上面所說明般,藉此,能將較長時間載置基板9的空間之索引區塊10以及載置單元40設定成低氧氛圍,結果能抑制基板處理裝置1中的基板9的氧化。The substrate processing method of the substrate processing apparatus 1 described above includes the following steps: the index robot 12 carries the substrate 9 from the index block 10 to the placement unit 40 (step S14 ); 9 is carried out from the placement unit 40 (step S17 ) and carried into the processing unit 21 (step S19 ); the substrate 9 is processed in the processing unit 21 (step S20 ); the substrate 9 is carried out from the processing unit 21 by the center robot 22 (Step S21 ) and carry it into the placement unit 40 (step S23 ); and the substrate 9 is carried out from the placement unit 40 to the index block 10 by the index robot 12 (step S27 ). In addition, the movement of the gas between the index block 10 and the placement unit 40 in the low oxygen atmosphere whose oxygen concentration is lower than that of the atmospheric air can be blocked, and the conveyance path 23 is connected in the process block 20 to the processing unit 21 and the conveyance path 23 . Mounting unit 40 . As described above, the index block 10 and the placement unit 40 in the space where the substrate 9 is placed for a long time can be set to a low oxygen atmosphere, and as a result, the oxidation of the substrate 9 in the substrate processing apparatus 1 can be suppressed.

在上面所說明的基板處理裝置1以及基板處理方法中,可進行各種變更。Various modifications can be made to the substrate processing apparatus 1 and the substrate processing method described above.

例如,載置於載置單元40之基板9的片數亦可適當變更。此外,載置單元40的構造亦可變更成各種構造。例如,亦可在框體434的內部空間400中設置有用以使四個基板支撐部431於上下方向移動之支撐部移動機構(例如電動缸等致動器),載置有被搬入的基板9之預定的基板支撐部431或者載置有被搬出的預定的基板9之基板支撐部431係移動至與框體434的開口相同的高度。藉此,能將該開口的上下方向的高度小型化。結果,能抑制中心機器人22將基板9搬入以及搬出時大氣氛圍進入至載置單元40。For example, the number of substrates 9 placed on the placement unit 40 may be appropriately changed. In addition, the structure of the mounting unit 40 may be changed into various structures. For example, a support portion moving mechanism (eg, an actuator such as an electric cylinder) for moving the four substrate support portions 431 in the vertical direction may be provided in the inner space 400 of the frame body 434, and the loaded substrate 9 may be placed thereon. The predetermined substrate support portion 431 or the substrate support portion 431 on which the predetermined substrate 9 to be carried out is placed is moved to the same height as the opening of the frame body 434 . Thereby, the height in the vertical direction of the opening can be reduced in size. As a result, it is possible to prevent the atmospheric atmosphere from entering the placement unit 40 when the center robot 22 carries the substrate 9 in and out.

亦可在載置單元40中獨立地設置有用以載置未處理的基板9之空間以及用以載置處理完畢的基板9載置之空間。在圖9至圖11所示的載置單元40a中設置有用以載置未處理的基板9之下載置部41以及用以載置處理完畢的基板9之上載置部42。上載置部42係配置於下載置部41的上側。下載置部41的內部空間與上載置部42的內部空間係彼此獨立。下載置部41以及上載置部42亦分別作為用以載置基板9之載置單元。A space for placing the unprocessed substrate 9 and a space for placing the processed substrate 9 may be independently provided in the placement unit 40 . The placement unit 40 a shown in FIGS. 9 to 11 is provided with a lower placement portion 41 for placing the unprocessed substrate 9 and an upper placement portion 42 for placing the processed substrate 9 . The upper mounting portion 42 is arranged on the upper side of the lower mounting portion 41 . The inner space of the lower mounting portion 41 and the inner space of the upper mounting portion 42 are independent of each other. The lower placement portion 41 and the upper placement portion 42 also serve as placement units for placing the substrate 9, respectively.

下載置部41以及上載置部42係除了分別可於內部載置兩片基板9之外,具有與上面所說明的載置單元40略同樣的構造。具體而言,下載置部41係具備有框體414、基板支撐部411、第一擋門412以及第二擋門413。於框體414設置有:第一開口415,係被第一擋門412開閉;以及第二開口416,係被第二擋門413開閉。第一擋門412以及第二擋門413係分別藉由第一擋門移動機構417以及第二擋門移動機構418移動。於框體414的內部設置有具有與第一氣體供給部55相同的構造之下氣體供給部419。The lower placement portion 41 and the upper placement portion 42 have substantially the same structure as the placement unit 40 described above, except that the two substrates 9 can be placed therein. Specifically, the lower mounting portion 41 includes a frame body 414 , a substrate support portion 411 , a first shutter 412 , and a second shutter 413 . The frame body 414 is provided with: a first opening 415 , which is opened and closed by the first blocking door 412 ; and a second opening 416 , which is opened and closed by the second blocking door 413 . The first door 412 and the second door 413 are respectively moved by the first door moving mechanism 417 and the second door moving mechanism 418 . Inside the frame body 414, a gas supply part 419 having the same structure as the first gas supply part 55 is provided.

上載置部42係具備有框體424、基板支撐部421、第一擋門422以及第二擋門423。於框體424設置有:第一開口425,係被第一擋門422開閉,以及第二開口426,係被第二擋門423開閉。第一擋門422以及第二擋門423係分別藉由第一擋門移動機構427以及第二擋門移動機構428移動。於框體424的內部設置有具有與第一氣體供給部55相同的構造之上氣體供給部429。The upper placement portion 42 includes a frame body 424 , a substrate support portion 421 , a first shutter 422 and a second shutter 423 . The frame body 424 is provided with a first opening 425 , which is opened and closed by the first blocking door 422 , and a second opening 426 , which is opened and closed by the second blocking door 423 . The first door 422 and the second door 423 are moved by the first door moving mechanism 427 and the second door moving mechanism 428, respectively. Inside the casing 424, an upper gas supply part 429 having the same structure as the first gas supply part 55 is provided.

下載置部41的第一擋門412與第二擋門413以及上載置部42的第一擋門422與第二擋門423係可分別獨立地移動。此外,控制部60係可分別獨立地控制下氣體供給部419對下載置部41供給惰性氣體以及上氣體供給部429對上載置部42供給惰性氣體。The first shutter 412 and the second shutter 413 of the lower mounting portion 41 and the first shutter 422 and the second shutter 423 of the upper mounting portion 42 are movable independently. In addition, the control unit 60 can independently control the lower gas supply unit 419 to supply the inert gas to the lower mounting unit 41 and the upper gas supply unit 429 to supply the inert gas to the upper mounting unit 42 .

設置有載置單元40a以取代載置單元40之基板處理裝置1中的基板9的處理的流程係與圖8A以及圖8B所示的流程略同樣。具體而言,如圖12A以及圖12B所示,首先,藉由下氣體供給部419將下載置部41設定成低氧氛圍(步驟S31)。此時,上載置部42亦可與下載置部41不同且是大氣氛圍。接著,藉由索引機器人12從承載器95搬出未處理的基板9(步驟S32)。接著,開放下載置部41的第二開口416,將未處理的基板9搬入至下載置部41後,閉鎖第二開口416(步驟S33至步驟S35)。The processing flow of the substrate 9 in the substrate processing apparatus 1 in which the placing unit 40a is provided in place of the placing unit 40 is substantially the same as that shown in FIGS. 8A and 8B . Specifically, as shown in FIGS. 12A and 12B , first, the lower loading unit 41 is set to a low-oxygen atmosphere by the lower gas supply unit 419 (step S31 ). At this time, the upper mounting portion 42 may be different from the lower mounting portion 41 and may have an atmosphere. Next, the unprocessed board|substrate 9 is carried out from the carrier 95 by the index robot 12 (step S32). Next, the second opening 416 of the lower loading portion 41 is opened, and the unprocessed substrate 9 is loaded into the lower loading portion 41, and then the second opening 416 is closed (steps S33 to S35).

接著,開放下載置部41的第一開口415,藉由中心機器人22將未處理的基板9從下載置部41搬出後,閉鎖第一開口415(步驟S36至步驟S38)。接著,藉由中心機器人22將基板9搬入至處理單元21,在處理單元21中對基板9進行處理後,從處理單元21搬出基板9(步驟S39至步驟S41)。Next, the first opening 415 of the lower loading portion 41 is opened, and the unprocessed substrate 9 is carried out from the lower loading portion 41 by the center robot 22, and then the first opening 415 is closed (steps S36 to S38). Next, the substrate 9 is carried into the processing unit 21 by the center robot 22, and after the substrate 9 is processed in the processing unit 21, the substrate 9 is carried out from the processing unit 21 (steps S39 to S41).

接著,開放上載置部42的第一開口425,藉由中心機器人22搬入處理完畢的基板9後,閉鎖第一開口425(步驟S42至步驟S44)。接著,藉由上氣體供給部429將上載置部42設定成低氧氛圍(步驟S45)。之後,開放上載置部42的第二開口426,藉由索引機器人12將處理完畢的基板9從上載置部42搬出,閉鎖第二開口426(步驟S46至步驟S48)。再者,藉由索引機器人12將處理完畢的基板9搬入至承載器95並結束對於基板9的一連串的處理(步驟S49)。Next, the first opening 425 of the upper placement portion 42 is opened, and the processed substrate 9 is loaded in by the center robot 22, and then the first opening 425 is closed (steps S42 to S44). Next, the upper mounting part 42 is set to a low-oxygen atmosphere by the upper gas supply part 429 (step S45). After that, the second opening 426 of the upper mounting portion 42 is opened, the processed substrate 9 is carried out from the upper mounting portion 42 by the index robot 12, and the second opening 426 is closed (steps S46 to S48). Then, the processed substrate 9 is carried into the carrier 95 by the index robot 12, and the series of processing on the substrate 9 is completed (step S49).

在載置單元40a中分割用以載置未處理的基板9之空間以及用以載置處理完畢的基板9之空間,藉此將中心機器人22將基板9搬入以及搬出後被設定成低氧氛圍之空間小型化。因此,能減少惰性氣體的使用量。此外,由於能縮短將該空間設定成低氧氛圍所需的時間,因此亦能縮短基板9的處理所需的時間。再者,由於能將用以將基板9搬入以及搬出之開口小型化,因此能抑制中心機器人22將基板9搬入以及搬出時大氣氛圍進入至載置單元40a。In the placement unit 40a, the space for placing the unprocessed substrate 9 and the space for placing the processed substrate 9 are divided, whereby the center robot 22 carries the substrate 9 in and out, and a low-oxygen atmosphere is set. space miniaturization. Therefore, the usage-amount of inert gas can be reduced. In addition, since the time required for setting the space in a low-oxygen atmosphere can be shortened, the time required for processing the substrate 9 can also be shortened. Furthermore, since the opening for carrying in and carrying out the substrate 9 can be reduced in size, it is possible to prevent the atmospheric atmosphere from entering the placement unit 40a when the center robot 22 carries in and out the substrate 9 .

在圖4至圖6所示的載置單元40中,亦可取代第一擋門432而設置有可阻隔氣體經由第一開口435移動之其他的構造(例如氣簾(air curtain))。此外,亦可取代第二擋門433而設置有可阻隔氣體經由第二開口436移動之其他的構造(例如氣簾)。針對載置單元40a亦同樣。In the placing unit 40 shown in FIGS. 4 to 6 , other structures (eg, an air curtain) that can block the movement of gas through the first opening 435 can also be provided instead of the first blocking door 432 . In addition, instead of the second blocking door 433 , other structures (eg, a gas curtain) that can block the movement of the gas through the second opening 436 can also be provided. The same applies to the mounting unit 40a.

在基板處理裝置1中,只要載置單元40、40a設置於索引區塊10與處理區塊20之間的連接部,則不一定需要設置有連繫部31。In the substrate processing apparatus 1, as long as the mounting units 40 and 40a are provided at the connection portion between the index block 10 and the processing block 20, the connection portion 31 does not necessarily need to be provided.

在基板處理裝置1中,搬運路徑23不一定需要為大氣氛圍,例如亦可僅對中心機器人22的周圍供給惰性氣體而將搬運路徑23的一部分(亦即中心機器人22的周圍)設定成低氧氛圍。此外,搬運路徑23的氧濃度不一定需要比索引區塊10的氧濃度以及載置單元40、40a的氧濃度還高。在任何情形中,在基板處理裝置1中皆能抑制搬運路徑23的氛圍經由載置單元40、40a進入至索引區塊10。In the substrate processing apparatus 1, the conveyance path 23 does not necessarily need to be in the atmosphere. For example, only an inert gas may be supplied to the periphery of the center robot 22, and a part of the conveyance path 23 (that is, the periphery of the center robot 22) may be set to a low oxygen level. Ambience. In addition, the oxygen concentration of the conveyance path 23 does not necessarily need to be higher than the oxygen concentration of the index block 10 and the oxygen concentration of the placement units 40 and 40a. In any case, in the substrate processing apparatus 1, the atmosphere of the conveyance path 23 can be suppressed from entering the index block 10 via the placement units 40 and 40a.

在基板處理裝置1中亦可省略第二遮蔽部52。此外,不一定需要個別地控制從第一氣體供部55供給惰性氣體以及從第二氣體供給部56供給惰性氣體。The second shielding portion 52 may also be omitted in the substrate processing apparatus 1 . In addition, it is not necessarily necessary to individually control the supply of the inert gas from the first gas supply part 55 and the supply of the inert gas from the second gas supply part 56 .

載置單元40的低氧氛圍亦可藉由從第一氣體供給部55供給惰性氣體以外的手段來實現。針對載置單元40a亦同樣。此外,索引區塊10的低氧氛圍亦同樣地,亦可藉由從第二氣體供給部56供給惰性氣體以外的手段來實現。The low-oxygen atmosphere of the mounting unit 40 may be realized by means other than supplying the inert gas from the first gas supply unit 55 . The same applies to the mounting unit 40a. In addition, the low-oxygen atmosphere of the index block 10 can also be realized by means other than supplying the inert gas from the second gas supply part 56 similarly.

在基板處理裝置1中,中心機器人22的構造亦可進行各種變更。例如,可藉由中心機器人22一次搬運的基板9的片數亦可為一片或者亦可為三片以上。此外,中心機器人22的手部的形狀以及構造亦可進行各種變更。針對索引機器人12亦同樣。In the substrate processing apparatus 1, the structure of the center robot 22 may be variously changed. For example, the number of substrates 9 that can be transported at one time by the center robot 22 may be one or three or more. In addition, the shape and structure of the hand of the center robot 22 may be variously changed. The same applies to the index robot 12 .

亦可於基板處理裝置1的處理區塊20設置有上面所說明的處理單元21以外的各種構造的處理單元,並對基板9進行各種處理(例如對基板9的下表面的洗淨處理)。Processing units of various structures other than the processing unit 21 described above may be provided in the processing block 20 of the substrate processing apparatus 1 to perform various treatments on the substrate 9 (eg, cleaning of the lower surface of the substrate 9 ).

上面所說明的基板處理裝置1除了半導體基板以外亦可利用於使用於液晶顯示裝置或者有機EL(Electro Luminescence;電致發光)顯示裝置等平面顯示裝置(Flat Panel Display)之玻璃基板或者使用於其他的顯示裝置之玻璃基板的處理。此外,上面所說明的基板處理裝置1亦可利用於光碟用基板、磁碟用基板、光磁碟用基板、光罩用基板、陶瓷基板以及太陽電池用基板等處理。The substrate processing apparatus 1 described above can also be used for a glass substrate used in a flat panel display such as a liquid crystal display device or an organic EL (Electro Luminescence) display device, in addition to a semiconductor substrate, or for other applications. Processing of glass substrates for display devices. In addition, the substrate processing apparatus 1 described above can also be used for processing optical disk substrates, magnetic disk substrates, optical magnetic disk substrates, mask substrates, ceramic substrates, solar cell substrates, and the like.

上面所說明的實施形態以及各個變化例中的構成只要相互未矛盾則亦可適當地組合。The configurations in the above-described embodiment and each modification example may be appropriately combined as long as they do not contradict each other.

雖然已詳細地說明本發明,但這些說明為例示性而非限定性。因此,只要未逸離本發明的範圍,自然有多種變化以及態樣。While the invention has been described in detail, these descriptions are illustrative and not restrictive. Therefore, various changes and aspects are naturally possible without departing from the scope of the present invention.

1:基板處理裝置 8:電腦 9:基板 10:索引區塊 11:承載器台 12:索引機器人 20:處理區塊 21:處理單元 22:中心機器人 23:搬運路徑 24:處理部 30:隔壁 31:連繫部 40、40a:載置單元 41:下載置部 42:上載置部 51:第一遮蔽部 52:第二遮蔽部 55:第一氣體供給部 56:第二氣體供給部 57:空氣供給部 58:惰性氣體供給源 59:吸引機構 60:控制部 81:處理器 82:記憶體 83:輸入輸出部 84:匯流排 85:鍵盤 86:滑鼠 87:顯示器 88:發送部 91:上表面 95:承載器 100:(索引區塊的)內部空間 121a、121b、221a、221b:搬運臂 122、222:臂台 123:基台 211:殼體 223:支柱 224:升降機構 230:(搬運路徑的)內部空間 241:基板保持部 242:基板旋轉機構 243:罩部 244:噴嘴 245:頂板 310:(連繫部的)內部空間 400:(載置單元的)內部空間 412、422、432:第一擋門 413、423、433:第二擋門 415、425、435:第一開口 416、426、436:第二開口 419:下氣體供給部 429:上氣體供給部 431:基板支撐部 434:框體 437:第一擋門移動機構 438:第二擋門移動機構 551:中央噴出部 552:周緣噴出部 553:側方噴出部 554、562、572:排氣埠 555:噴出要素 561:氣體噴出部 571:空氣噴出部 581:閥 J1:旋轉軸 1: Substrate processing device 8: Computer 9: Substrate 10: Index block 11: Carrier table 12: Index Robot 20: Process Blocks 21: Processing unit 22: Center Robot 23: Handling path 24: Processing Department 30: Next door 31: Liaison Department 40, 40a: Mounting unit 41: Download and set the department 42: Uploading part 51: First shade 52: Second shade 55: First gas supply part 56: Second gas supply part 57: Air supply part 58: Inert gas supply source 59: Attract agencies 60: Control Department 81: Processor 82: memory 83: Input and output section 84: Busbar 85: Keyboard 86: Mouse 87: Display 88: Sending Department 91: Upper surface 95: Carrier 100: Internal space (of the index block) 121a, 121b, 221a, 221b: carrying arms 122, 222: Arm stand 123: Abutment 211: Shell 223: Pillar 224: Lifting mechanism 230: Interior space (of the carrying path) 241: Substrate holding part 242: Substrate Rotation Mechanism 243: Hood 244: Nozzle 245: Top Plate 310: Interior space (of the liaison department) 400: Internal space (of the placement unit) 412, 422, 432: First stop 413, 423, 433: Second stop 415, 425, 435: first opening 416, 426, 436: Second opening 419: Lower gas supply part 429: Upper gas supply part 431: Substrate support part 434: Frame 437: First stop door moving mechanism 438: Second door moving mechanism 551: Central ejection part 552: Peripheral ejection part 553: Side ejection part 554, 562, 572: exhaust port 555: Ejection Elements 561: Gas ejection part 571: Air ejection part 581: Valve J1: Rotary axis

圖1係實施形態之一的基板處理裝置的俯視圖。 圖2係顯示基板處理裝置的內部之前視圖。 圖3係顯示處理單元的一例之圖。 圖4係載置單元的側視圖。 圖5係載置單元的側視圖。 圖6係顯示載置單元的內部之圖。 圖7係顯示控制部的構成之圖。 圖8A係顯示基板的處理的流程之圖。 圖8B係顯示基板的處理的流程之圖。 圖9係其他的載置單元的側視圖。 圖10係其他的載置單元的側視圖。 圖11係顯示其他的載置單元的內部之圖。 圖12A係顯示基板的處理的流程之圖。 圖12B係顯示基板的處理的流程之圖。FIG. 1 is a plan view of a substrate processing apparatus according to one embodiment. FIG. 2 is a front view showing the interior of the substrate processing apparatus. FIG. 3 is a diagram showing an example of a processing unit. Fig. 4 is a side view of the placement unit. Fig. 5 is a side view of the placement unit. FIG. 6 is a diagram showing the inside of the placement unit. FIG. 7 is a diagram showing the configuration of the control unit. FIG. 8A is a diagram showing the flow of processing of the substrate. FIG. 8B is a diagram showing the flow of processing of the substrate. FIG. 9 is a side view of another mounting unit. Fig. 10 is a side view of another placement unit. FIG. 11 is a diagram showing the inside of another mounting unit. FIG. 12A is a diagram showing the flow of processing of the substrate. FIG. 12B is a diagram showing the flow of processing of the substrate.

1:基板處理裝置 1: Substrate processing device

9:基板 9: Substrate

10:索引區塊 10: Index block

11:承載器台 11: Carrier table

12:索引機器人 12: Index Robot

20:處理區塊 20: Process Blocks

21:處理單元 21: Processing unit

22:中心機器人 22: Center Robot

23:搬運路徑 23: Handling path

30:隔壁 30: Next door

31:連繫部 31: Liaison Department

40:載置單元 40: Placement unit

51:第一遮蔽部 51: First shade

52:第二遮蔽部 52: Second shade

56:第二氣體供給部 56: Second gas supply part

57:空氣供給部 57: Air supply part

95:承載器 95: Carrier

100:(索引區塊的)內部空間 100: Internal space (of the index block)

121a、121b、221a、221b:搬運臂 121a, 121b, 221a, 221b: carrying arms

122、222:臂台 122, 222: Arm stand

123:基台 123: Abutment

223:支柱 223: Pillar

224:升降機構 224: Lifting mechanism

230:(搬運路徑的)內部空間 230: Interior space (of the carrying path)

310:(連繫部的)內部空間 310: Interior space (of the liaison department)

432:第一擋門 432: First stop

433:第二擋門 433: Second stop

434:框體 434: Frame

562:排氣埠 562: exhaust port

561:氣體噴出部 561: Gas ejection part

571:空氣噴出部 571: Air ejection part

Claims (12)

一種基板處理裝置,係用以處理基板,並具備有:處理區塊,係配置有用以處理基板之處理單元以及用以進行基板相對於前述處理單元之搬入以及搬出之第一搬運機器人;索引區塊,係配置有用以進行基板相對於可收容複數個基板的承載器之搬入以及搬出之第二搬運機器人;載置單元,係設置於前述處理區塊與前述索引區塊之間的連接部,用以保持從前述第二搬運機器人朝前述第一搬運機器人傳遞之未處理的基板以及從前述第一搬運機器人朝前述第二搬運機器人傳遞之處理完畢的基板;第一遮蔽部,係可阻隔氧濃度比大氣還低之低氧氛圍的前述索引區塊以及前述載置單元與搬運路徑之間的氣體的移動,前述搬運路徑係在前述處理區塊中連接前述處理單元與前述載置單元;第一氣體供給部,係對前述載置單元供給惰性氣體,藉此將前述載置單元設定成低氧氛圍;第二遮蔽部,係可阻隔前述索引區塊與前述載置單元之間的氣體的移動;以及控制部,係控制前述第一搬運機器人、前述第二搬運機器人、前述第一遮蔽部、前述第一氣體供給部以及前述第二遮蔽部;前述第一遮蔽部係具備有:第一門體,係用以將用以連接前述搬運路徑的內部空間與前述載置單元的內部空間之第一開口予以開閉;前述第二遮蔽部係具備有:第二門體,係用以將用以連接前述索引區塊的內部空間與前述載置單元的內部空間之第二開口予以開閉; 藉由前述控制部的控制,在藉由前述第一門體以及前述第二門體閉鎖前述第一開口以及前述第二開口的狀態下將前述載置單元設定成低氧氛圍後,開放前述第二開口,藉由前述第二搬運機器人將未處理的基板經由前述第二開口搬入至前述載置單元,藉由前述第二門體閉鎖前述第二開口後,開放前述第一開口,藉由前述第一搬運機器人將前述未處理的基板經由前述第一開口從前述載置單元搬出。 A substrate processing apparatus is used for processing substrates, and includes: a processing block, which is equipped with a processing unit for processing the substrate and a first conveying robot for carrying in and out of the substrate relative to the processing unit; an index area The block is equipped with a second transfer robot for carrying the substrates in and out of the carrier capable of accommodating a plurality of substrates; the placing unit is provided at the connecting portion between the processing block and the index block, It is used to hold the unprocessed substrates transferred from the second transfer robot to the first transfer robot and the processed substrates transferred from the first transfer robot to the second transfer robot; the first shielding part can block oxygen the movement of the gas between the index block of the hypoxic atmosphere with the concentration lower than that of the atmospheric air and the loading unit and the conveying path, the conveying path is connected to the processing unit and the loading unit in the processing block; A gas supply part supplies inert gas to the loading unit, thereby setting the loading unit to a low-oxygen atmosphere; a second shielding part can block the gas between the index block and the loading unit movement; and a control unit for controlling the first transfer robot, the second transfer robot, the first shielding unit, the first gas supply unit, and the second shielding unit; the first shielding unit includes: a first shielding unit The door body is used to open and close the first opening for connecting the inner space of the conveying path and the inner space of the loading unit; the second shielding part is provided with: a second door body, which is used to opening and closing with a second opening connecting the inner space of the index block and the inner space of the placing unit; Under the control of the control unit, the placing unit is set to a low-oxygen atmosphere in a state where the first opening and the second opening are closed by the first door and the second door, and then the first door is opened. Two openings, the unprocessed substrates are loaded into the placing unit through the second opening by the second transfer robot, the second opening is closed by the second door, the first opening is opened, and the first opening is opened by the second opening. The first transfer robot carries out the unprocessed substrate from the placement unit through the first opening. 一種基板處理裝置,係用以處理基板,並具備有:處理區塊,係配置有用以處理基板之處理單元以及用以進行基板相對於前述處理單元之搬入以及搬出之第一搬運機器人;索引區塊,係配置有用以進行基板相對於可收容複數個基板的承載器之搬入以及搬出之第二搬運機器人;載置單元,係設置於前述處理區塊與前述索引區塊之間的連接部,用以保持從前述第二搬運機器人朝前述第一搬運機器人傳遞之未處理的基板以及從前述第一搬運機器人朝前述第二搬運機器人傳遞之處理完畢的基板;第一遮蔽部,係可阻隔氧濃度比大氣還低之低氧氛圍的前述索引區塊以及前述載置單元與搬運路徑之間的氣體的移動,前述搬運路徑係在前述處理區塊中連接前述處理單元與前述載置單元;第一氣體供給部,係對前述載置單元供給惰性氣體,藉此將前述載置單元設定成低氧氛圍;第二遮蔽部,係可阻隔前述索引區塊與前述載置單元之間的氣體的移動;以及控制部,係控制前述第一搬運機器人、前述第二搬運機器人、前述第一遮蔽部、前述第一氣體供給部以及前述第二遮蔽部; 前述第一遮蔽部係具備有:第一門體,係用以將用以連接前述搬運路徑的內部空間與前述載置單元的內部空間之第一開口予以開閉;前述第二遮蔽部係具備有:第二門體,係用以將用以連接前述索引區塊的內部空間與前述載置單元的內部空間之第二開口予以開閉;藉由前述控制部的控制,在藉由前述第二門體閉鎖前述第二開口且開放前述第一開口的狀態下,藉由前述第一搬運機器人將處理完畢的基板經由前述第一開口搬入至前述載置單元後,藉由前述第一門體閉鎖前述第一開口,在藉由前述第一門體以及前述第二門體閉鎖前述第一開口以及前述第二開口的狀態下將前述載置單元設定成低氧氛圍後,開放前述第二開口,藉由前述第二搬運機器人將前述處理完畢的基板經由前述第二開口從前述載置單元搬出。 A substrate processing apparatus is used for processing substrates, and includes: a processing block, which is equipped with a processing unit for processing the substrate and a first conveying robot for carrying in and out of the substrate relative to the processing unit; an index area The block is equipped with a second transfer robot for carrying the substrates in and out of the carrier capable of accommodating a plurality of substrates; the placing unit is provided at the connecting portion between the processing block and the index block, It is used to hold the unprocessed substrates transferred from the second transfer robot to the first transfer robot and the processed substrates transferred from the first transfer robot to the second transfer robot; the first shielding part can block oxygen the movement of the gas between the index block of the hypoxic atmosphere with the concentration lower than that of the atmospheric air and the loading unit and the conveying path, the conveying path is connected to the processing unit and the loading unit in the processing block; A gas supply part supplies inert gas to the loading unit, thereby setting the loading unit to a low-oxygen atmosphere; a second shielding part can block the gas between the index block and the loading unit movement; and a control unit for controlling the first transfer robot, the second transfer robot, the first shielding unit, the first gas supply unit, and the second shielding unit; The first shielding portion includes: a first door for opening and closing a first opening for connecting the inner space of the conveyance path and the inner space of the placing unit; the second shielding portion includes a : The second door body is used to open and close the second opening for connecting the inner space of the index block and the inner space of the placing unit; under the control of the control unit, the second door is opened and closed by the second door. In a state where the second opening is closed and the first opening is opened, the processed substrate is loaded into the placement unit through the first opening by the first transfer robot, and then the first door is used to close the first door. In the first opening, after the placing unit is set to a low-oxygen atmosphere in a state where the first opening and the second opening are closed by the first door and the second door, the second opening is opened, and the second opening is opened. The processed substrate is carried out from the placement unit through the second opening by the second transfer robot. 如請求項1或2所記載之基板處理裝置,其中前述第一遮蔽部係具備有:門體,係用以將用以連接前述搬運路徑的內部空間與前述載置單元的內部空間之開口予以開閉。 The substrate processing apparatus according to claim 1 or 2, wherein the first shielding portion includes a door for opening an opening for connecting the inner space of the conveyance path and the inner space of the placement unit Opening and closing. 如請求項1或2所記載之基板處理裝置,其中進一步具備有:第一氣體供給部,係對前述載置單元供給惰性氣體,藉此將前述載置單元設定成低氧氛圍。 The substrate processing apparatus according to claim 1 or 2, further comprising: a first gas supply unit for supplying an inert gas to the placing unit, thereby setting the placing unit in a low-oxygen atmosphere. 如請求項1或2所記載之基板處理裝置,其中進一步具備有:第二遮蔽部,係可阻隔前述索引區塊與前述載置單元之間的氣體的移動。 The substrate processing apparatus according to claim 1 or 2, further comprising: a second shielding portion capable of blocking movement of gas between the index block and the placement unit. 如請求項5所記載之基板處理裝置,其中前述第二遮蔽部係具備有:門體,係用以將用以連接前述索引區塊的內部空間與前述載置單元的內部空間之開口予以開閉。 The substrate processing apparatus according to claim 5, wherein the second shielding portion includes a door for opening and closing an opening for connecting the inner space of the index block and the inner space of the placement unit . 如請求項1或2所記載之基板處理裝置,其中進一步具備有: 第二氣體供給部,係對前述索引區塊供給惰性氣體,藉此將前述索引區塊設定成低氧氛圍。 The substrate processing apparatus according to claim 1 or 2, further comprising: The second gas supply unit supplies inert gas to the index block, thereby setting the index block to a low-oxygen atmosphere. 如請求項1或2所記載之基板處理裝置,其中進一步具備有:第二遮蔽部,係可阻隔前述索引區塊與前述載置單元之間的氣體的移動;第一氣體供給部,係對前述載置單元供給惰性氣體,藉此將前述載置單元設定成低氧氛圍;第二氣體供給部,係對前述索引區塊供給惰性氣體,藉此將前述索引區塊設定成低氧氛圍;以及控制部,係個別地控制從前述第一氣體供給部供給惰性氣體以及從前述第二氣體供給部供給惰性氣體。 The substrate processing apparatus according to claim 1 or 2, further comprising: a second shielding portion capable of blocking the movement of gas between the index block and the placement unit; and a first gas supplying portion for The loading unit supplies an inert gas, thereby setting the loading unit to a low-oxygen atmosphere; the second gas supply unit supplies an inert gas to the index block, thereby setting the index block to a low-oxygen atmosphere; and a control unit for individually controlling the supply of the inert gas from the first gas supply unit and the supply of the inert gas from the second gas supply unit. 如請求項1或2所記載之基板處理裝置,其中前述搬運路徑的氧濃度係比前述索引區塊的氧濃度以及前述載置單元的氧濃度還高。 The substrate processing apparatus according to claim 1 or 2, wherein the oxygen concentration of the conveyance path is higher than the oxygen concentration of the index block and the oxygen concentration of the placement unit. 如請求項9所記載之基板處理裝置,其中前述搬運路徑係大氣氛圍。 The substrate processing apparatus according to claim 9, wherein the conveyance path is an atmosphere. 一種基板處理方法,係藉由基板處理裝置處理基板;前述基板處理裝置係具備有:處理區塊,係配置有用以處理基板之處理單元以及用以進行基板相對於前述處理單元之搬入以及搬出之第一搬運機器人;索引區塊,係配置有用以進行基板相對於可收容複數個基板的承載器之搬入以及搬出之第二搬運機器人;以及載置單元,係設置於前述處理區塊與前述索引區塊之間的連接部,用以保持從前述第二搬運機器人朝前述第一搬運機器人傳遞之未處理的基板以及從前述第一搬運機器人朝前述第二搬運機器人傳遞之處理完畢的基板; 前述基板處理方法係具備有:工序(a),係藉由前述第二搬運機器人將基板從前述索引區塊搬入至前述載置單元;工序(b),係藉由前述第一搬運機器人從前述載置單元搬出前述基板並搬入至前述處理單元;工序(c),係在前述處理單元中對前述基板進行處理;工序(d),係藉由前述第一搬運機器人從前述處理單元搬出前述基板並搬入至前述載置單元;以及工序(e),係藉由前述第二搬運機器人將前述基板從前述載置單元搬出至前述索引區塊;可對前述載置單元供給惰性氣體,藉此將前述載置單元設定成氧濃度比大氣還低之低氧氛圍;可對前述索引區塊供給惰性氣體,藉此將前述索引區塊設定成氧濃度比大氣還低之低氧氛圍;可藉由第一門體阻隔低氧氛圍的前述索引區塊以及前述載置單元與搬運路徑之間的氣體的移動,前述搬運路徑係在前述處理區塊中連接前述處理單元與前述載置單元,前述第一門體係用以將用以連接前述搬運路徑的內部空間與前述載置單元的內部空間之第一開口予以開閉;可藉由第二門體阻隔前述索引區塊與前述載置單元之間的氣體的移動,前述第二門體係用以將用以連接前述索引區塊的內部空間與前述載置單元的內部空間之第二開口予以開閉;在藉由前述第一門體以及前述第二門體閉鎖前述第一開口以及前述第二開口的狀態下將前述載置單元設定成低氧氛圍後,開放前述第二開口,藉由前述第二搬運機器人將未處理的基板經由前述第二開口搬入至前述載置單元;藉由前述第二門體閉鎖前述第二開口後,開放前述第一開 口,藉由前述第一搬運機器人將前述未處理的基板經由前述第一開口從前述載置單元搬出。 A substrate processing method for processing a substrate by a substrate processing apparatus; the substrate processing apparatus includes: a processing block configured with a processing unit for processing the substrate and a substrate for carrying in and out of the processing unit relative to the processing unit a first transfer robot; an index block configured with a second transfer robot for carrying substrates into and out of a carrier capable of accommodating a plurality of substrates; and a placing unit disposed on the processing block and the index The connecting portion between the blocks is used to hold the unprocessed substrates transferred from the second transfer robot to the first transfer robot and the processed substrates transferred from the first transfer robot to the second transfer robot; The substrate processing method includes: a step (a) of carrying a substrate from the index block to the placement unit by the second transfer robot; and step (b) of transferring the substrate from the first transfer robot to the placement unit by the first transfer robot The loading unit unloads the substrate and carries it into the processing unit; step (c) is to process the substrate in the processing unit; step (d) is to use the first transfer robot to unload the substrate from the processing unit and carry it into the placing unit; and in step (e), the second transfer robot is used to unload the substrate from the placing unit to the index block; an inert gas can be supplied to the placing unit, whereby the The placing unit is set to a hypoxic atmosphere with an oxygen concentration lower than that of the atmosphere; an inert gas can be supplied to the index block, thereby setting the index block to a hypoxic atmosphere with an oxygen concentration lower than the atmosphere; The first door blocks the movement of the gas between the index block of the low-oxygen atmosphere and the loading unit and a conveying path, the conveying path is connected to the processing unit and the loading unit in the processing block, and the first A door system is used to open and close a first opening for connecting the inner space of the conveying path and the inner space of the placing unit; the second door can block the gap between the index block and the placing unit. During the movement of the gas, the second door system is used to open and close the second opening for connecting the inner space of the index block and the inner space of the placing unit; through the first door body and the second door After the loading unit is set to a low-oxygen atmosphere with the first opening and the second opening closed by the body, the second opening is opened, and the unprocessed substrate is carried in through the second opening by the second transfer robot. to the loading unit; after the second opening is closed by the second door, the first opening is opened. The unprocessed substrate is carried out from the placement unit through the first opening by the first transfer robot. 一種基板處理方法,係藉由基板處理裝置處理基板;前述基板處理裝置係具備有:處理區塊,係配置有用以處理基板之處理單元以及用以進行基板相對於前述處理單元之搬入以及搬出之第一搬運機器人;索引區塊,係配置有用以進行基板相對於可收容複數個基板的承載器之搬入以及搬出之第二搬運機器人;以及載置單元,係設置於前述處理區塊與前述索引區塊之間的連接部,用以保持從前述第二搬運機器人朝前述第一搬運機器人傳遞之未處理的基板以及從前述第一搬運機器人朝前述第二搬運機器人傳遞之處理完畢的基板;前述基板處理方法係具備有:工序(a),係藉由前述第二搬運機器人將基板從前述索引區塊搬入至前述載置單元;工序(b),係藉由前述第一搬運機器人從前述載置單元搬出前述基板並搬入至前述處理單元;工序(c),係在前述處理單元中對前述基板進行處理;工序(d),係藉由前述第一搬運機器人從前述處理單元搬出前述基板並搬入至前述載置單元;以及工序(e),係藉由前述第二搬運機器人將前述基板從前述載置單元搬出至前述索引區塊;可對前述載置單元供給惰性氣體,藉此將前述載置單元設定成氧濃度比大氣還低之低氧氛圍;可對前述索引區塊供給惰性氣體,藉此將前述索引區塊設定成氧濃度比大氣還低之低氧氛圍; 可藉由第一門體阻隔低氧氛圍的前述索引區塊以及前述載置單元與搬運路徑之間的氣體的移動,前述搬運路徑係在前述處理區塊中連接前述處理單元與前述載置單元,前述第一門體係用以將用以連接前述搬運路徑的內部空間與前述載置單元的內部空間之第一開口予以開閉;可藉由第二門體阻隔前述索引區塊與前述載置單元之間的氣體的移動,前述第二門體係用以將用以連接前述索引區塊的內部空間與前述載置單元的內部空間之第二開口予以開閉;在藉由前述第二門體閉鎖前述第二開口且開放前述第一開口的狀態下,藉由前述第一搬運機器人將處理完畢的基板經由前述第一開口搬入至前述載置單元後,藉由前述第一門體閉鎖前述第一開口;在藉由前述第一門體以及前述第二門體閉鎖前述第一開口以及前述第二開口的狀態下將前述載置單元設定成低氧氛圍後,開放前述第二開口,藉由前述第二搬運機器人將前述處理完畢的基板經由前述第二開口從前述載置單元搬出。A substrate processing method for processing a substrate by a substrate processing apparatus; the substrate processing apparatus includes: a processing block configured with a processing unit for processing the substrate and a substrate for carrying in and out of the processing unit relative to the processing unit a first transfer robot; an index block configured with a second transfer robot for carrying substrates into and out of a carrier capable of accommodating a plurality of substrates; and a placing unit disposed on the processing block and the index The connection parts between the blocks are used to hold the unprocessed substrates transferred from the second transfer robot to the first transfer robot and the processed substrates transferred from the first transfer robot to the second transfer robot; the aforementioned The substrate processing method includes: a step (a) of transferring a substrate from the index block to the placement unit by the second transfer robot; step (b) of transferring the substrate from the carrier to the first transfer robot by the first transfer robot Step (c), process the substrate in the processing unit; Step (d), use the first transfer robot to unload the substrate from the processing unit and carry it into the processing unit. Loading into the placing unit; and in step (e), the second transfer robot is used to unload the substrate from the placing unit to the index block; an inert gas may be supplied to the placing unit, thereby transferring the The placing unit is set to a hypoxic atmosphere with an oxygen concentration lower than that of the atmosphere; inert gas can be supplied to the index block, thereby setting the index block to a hypoxic atmosphere with an oxygen concentration lower than the atmosphere; The first door body can block the movement of the gas between the index block of the low-oxygen atmosphere and the carrying unit and the conveying path, and the conveying path is connected to the processing unit and the carrying unit in the processing block. the first door system is used to open and close the first opening for connecting the inner space of the conveying path and the inner space of the placing unit; the index block and the placing unit can be blocked by the second door body The movement of the gas between, the second door system is used to open and close the second opening for connecting the inner space of the index block and the inner space of the placing unit; In a state where the second opening is open and the first opening is opened, after the processed substrate is loaded into the placement unit through the first opening by the first transfer robot, the first opening is closed by the first door. ; After the placing unit is set to a low-oxygen atmosphere in a state where the first opening and the second opening are closed by the first door and the second door, the second opening is opened, and the second opening is opened by the first opening and the second opening. The two transfer robots carry out the processed substrates from the placement unit through the second opening.
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