CN115692301B - Process chamber and wafer processing method - Google Patents

Process chamber and wafer processing method Download PDF

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Publication number
CN115692301B
CN115692301B CN202110863982.7A CN202110863982A CN115692301B CN 115692301 B CN115692301 B CN 115692301B CN 202110863982 A CN202110863982 A CN 202110863982A CN 115692301 B CN115692301 B CN 115692301B
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China
Prior art keywords
wafer
thimble
bearing piece
process chamber
ring
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Active
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CN202110863982.7A
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Chinese (zh)
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CN115692301A (en
Inventor
高晓丽
宋海洋
傅新宇
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Beijing Naura Microelectronics Equipment Co Ltd
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Beijing Naura Microelectronics Equipment Co Ltd
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Application filed by Beijing Naura Microelectronics Equipment Co Ltd filed Critical Beijing Naura Microelectronics Equipment Co Ltd
Priority to CN202110863982.7A priority Critical patent/CN115692301B/en
Priority to TW111128665A priority patent/TWI827177B/en
Priority to PCT/CN2022/108900 priority patent/WO2023006060A1/en
Publication of CN115692301A publication Critical patent/CN115692301A/en
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Publication of CN115692301B publication Critical patent/CN115692301B/en
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders

Abstract

The application discloses a process chamber and a wafer processing method, wherein the process chamber comprises a chamber body, a bearing piece, an inner lining body, a first thimble, a second thimble, a first compression ring, a second compression ring and a rotary supporting piece, the process chamber is provided with a first working mode and a second working mode, the first thimble supports a first wafer at a first stop position in the first working mode, and when the bearing piece is lifted to a process position, the first compression ring and the first wafer are sequentially overlapped on the bearing piece; in a second working mode, the second thimble supports the second wafer, the first thimble is located at a second stop position, the rotary supporting piece places the second pressing ring on the first thimble, and when the bearing piece rises to a process position, the first pressing ring, the second pressing ring and the second wafer are sequentially overlapped on the bearing piece. When the process chamber is used for processing wafers with different sizes, the process chamber does not need to be opened, the workload during the mutual switching between working modes is relatively small, and the influence on the processing progress of the wafers is relatively small.

Description

Process chamber and wafer processing method
Technical Field
The application belongs to the technical field of semiconductor processing, and particularly relates to a process chamber and a wafer processing method.
Background
With the continuous progress of technology, the size requirement of wafers is continuously changed, and the requirement of large-size wafers is increasingly larger, but the requirement amount is relatively larger due to the mature technology of small-size wafers, so that wafers with different sizes are usually required to be processed in the current wafer processing. However, the size of the processed wafer varies, and the processing device corresponding to the wafer also needs to correspondingly vary, such as a pressing ring, so as to ensure that the wafer with the corresponding size and meeting the requirement can be normally formed. At present, when processing wafers with different sizes, the cover needs to be closed, corresponding processing devices are replaced, the switching workload is large, and the processing progress of the wafers can be greatly adversely affected.
Disclosure of Invention
The application discloses a process chamber and a wafer processing method, which are used for solving the problems that when wafers with different sizes are processed at present, a cover is required to be stopped, corresponding processing devices are replaced, the switching workload is large, and the processing progress of the wafers can be greatly and negatively affected.
In order to solve the above problems, the embodiments of the present application are implemented as follows:
in a first aspect, an embodiment of the present application provides a process chamber, including a chamber body, a carrier, a driver, an inner liner, a first support assembly thimble, a second support assembly thimble, a first pressure ring, a second pressure ring, and a rotating support, wherein,
the bearing piece is axially movably arranged in the cavity body along the cavity opening of the cavity body through the driving piece and is used for supporting a first wafer and a second wafer which are different in size and are to be processed, and the diameter of the first wafer is larger than that of the second wafer;
the inner liner body is arranged on the cavity body, the first pressure ring is movably supported on the inner liner body, and the inner diameter size of the first pressure ring is larger than the inner diameter size of the second pressure ring and smaller than the outer diameter size of the second pressure ring;
the bearing piece is provided with a plurality of first perforations and a plurality of second perforations, the first ejector pins and the first perforations are arranged in a one-to-one correspondence manner, the first ejector pins penetrate through the first perforations and are provided with first stop positions or second stop positions penetrating through the bearing piece, and the second stop positions are higher than the first stop positions in height relative to the bearing piece;
the second through holes and the second ejector pins are arranged in a one-to-one correspondence manner, and the second ejector pins penetrate through the second through holes;
the process chamber is provided with a first working mode and a second working mode, in the first working mode, the first thimble supports the first wafer at the first stop position, and when the bearing seat piece is lifted to the process position, the first compression ring and the first wafer are sequentially overlapped on the bearing seat piece;
in the second working mode, the second thimble supports the second wafer, the first thimble is located at a second stop position, the rotary supporting piece places the second pressing ring on the first thimble, the second thimble supports the second wafer, and when the bearing seat piece is lifted to a process position, the first pressing ring, the second pressing ring and the second wafer are sequentially stacked on the bearing seat piece.
In a second aspect, an embodiment of the present application discloses a wafer processing method applied to the above-mentioned process chamber, where the wafer processing method is used for processing a first wafer and a second wafer, the diameter of the first wafer is greater than that of the second wafer, and the wafer processing method includes:
in the case where the operation mode is the first operation mode:
lifting the first thimble to a first stop position;
controlling a first wafer to be supported on the first thimble;
lifting the bearing piece to a process position, and enabling a first compression ring and the first wafer to be sequentially overlapped on the bearing piece;
in the case where the operation mode is the second operation mode:
the control wafer is supported on the second thimble;
lifting the first thimble to a second stop position;
controlling the rotary supporting piece to rotate until the second compression ring is supported on the first thimble;
lifting the bearing piece, and enabling the first pressing ring, the second pressing ring and the second wafer to be sequentially overlapped on the bearing piece.
The embodiment of the application discloses a process chamber, by adopting the process chamber, two wafers with different sizes can be processed respectively, namely a first wafer and a second wafer, wherein the diameter of the first wafer is larger than that of the second wafer. The process chamber is provided with the first working mode and the second working mode, under the first working mode, the first wafer can be supported on the first thimble at the first stop position, then the first pressing ring and the first wafer can be ensured to be sequentially overlapped on the bearing piece along with the bearing piece to be continuously lifted to the process position, and the purpose of processing the first wafer is achieved. Under the second working mode, the second wafer can be supported on the second thimble, the second pressing ring can be placed on the first thimble at the second stop position by the rotary supporting piece, and then the first pressing ring, the second pressing ring and the second wafer can be ensured to be sequentially overlapped on the bearing piece along with the continuous lifting of the bearing piece to the process position, so that the purpose of processing the second wafer is realized.
In summary, when the process chamber is adopted to process wafers with different sizes, uncovering is not needed, the workload during the mutual switching between working modes is relatively small, and the influence on the processing progress of the wafers is relatively small.
Drawings
The accompanying drawings, which are included to provide a further understanding of the application and are incorporated in and constitute a part of this specification, illustrate embodiments of the application and together with the description serve to explain the application and do not constitute a limitation on the application. In the drawings:
FIG. 1 is a schematic diagram of a process chamber disclosed in an embodiment of the present application;
FIG. 2 is a schematic view of a change in position of a second pressure ring in a process chamber according to an embodiment of the present application;
FIG. 3 is a schematic view of a carrier in a process chamber according to an embodiment of the present application;
FIG. 4 is a schematic cross-sectional view of a carrier in a process chamber according to an embodiment of the present application;
FIG. 5 is a schematic view of a rotating support in a process chamber according to an embodiment of the present application;
FIG. 6 is a schematic view of the structure of a support in a process chamber according to an embodiment of the present application;
FIG. 7 is a schematic diagram illustrating the cooperation of a portion of the structure of a process chamber according to an embodiment of the present application in a second mode of operation;
fig. 8 is a flow chart of a wafer processing method according to an embodiment of the present application.
Reference numerals illustrate:
110-reaction chamber, 120-accommodation space,
200-a bearing piece, 210-a first perforation, 220-a second perforation, 230-a limit groove,
310-lifting driving mechanism, 320-inner lining body,
410-a first thimble, 420-a second thimble,
510-a first compression ring, 520-a second compression ring, 530-a limiting block,
600-rotating support, 610-support, 611-annular body, 612-support, 620-rotating portion,
720-second wafer.
Detailed Description
In order to make the objects, technical solutions and advantages of the present application more apparent, the technical solutions of the present application will be clearly and completely described below with reference to specific embodiments of the present application and corresponding drawings. It will be apparent that the described embodiments are only some, but not all, embodiments of the application. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to be within the scope of the application.
The technical scheme disclosed by each embodiment of the application is described in detail below with reference to the accompanying drawings.
As shown in fig. 1-7, embodiments of the present application disclose a process chamber that may be used in semiconductor processing equipment and that is utilized to process wafers. The process chamber includes a chamber body, a carrier 200, an inner liner 320, a first thimble 410, a second thimble 420, a first compression ring 510, a second compression ring 520, and a rotary support 600.
The chamber body is a basic member of the process chamber, other components in the process chamber can be mounted on the chamber body, the shape of the chamber body can be a cylindrical structure, the reaction chamber 110 is arranged, the specific size of the chamber body can be flexibly selected according to practical situations, and the method is not limited herein. In addition, the top of the chamber body is provided with an opening in communication with the reaction chamber 110, which is mated with a cover plate in the semiconductor processing apparatus.
The carrier 200 is a component in the process chamber for carrying a wafer, and the carrier 200 may be an electrostatic chuck, so that the carrier 200 may be disposed in the chamber body in a liftable manner by means of other components such as a lifting driving mechanism 310; moreover, by setting the diameter and the like of the carrier 200, it is ensured that the carrier 200 can support the first wafers and the second wafers with different sizes, and the diameter of the first wafer is larger than that of the second wafer, and of course, the carrier 200 can only independently support the first wafer or the second wafer in the process. Specifically, the dimensions of the first wafer and the second wafer may be 8 inches and 6 inches, respectively, although the dimensions of the first wafer and the second wafer supported on the carrier 200 may be other dimensions, which are not limited herein.
The inner liner 320 is installed in the chamber body, and the inner liner 320 can form a process space for limiting plasma distribution in the chamber body, so that smooth etching operation is ensured. The specific shape and size of the inner liner 320 may be correspondingly determined according to the specific shape and size of the chamber body, which is not limited herein.
The first pressure ring 510 is movably supported on the inner liner 320, and the first pressure ring 510 and the second pressure ring 520 are both members for holding wafers, wherein the first pressure ring 510 is used for holding a first wafer with a larger size, and the second pressure ring 520 is used for holding a second wafer with a smaller size. The inner diameter of the first pressure ring 510 is larger than the inner diameter of the second pressure ring 520, and the inner diameter of the first pressure ring 510 is smaller than the outer diameter of the second pressure ring 520, so that when the second pressure ring 520 is lifted up to the lower side of the first pressure ring 510 along with the carrier 200, the second pressure ring 520 can drive the first pressure ring 510 to perform lifting movement together when the carrier 200 is lifted up. Specifically, the actual dimensions of each of the first pressure ring 510 and the second pressure ring 520 may be selected according to the specific dimensions of the first wafer and the second wafer to be processed, which is not limited herein.
The first ejector pins 410 and the second ejector pins 420 are all parts for lifting up the wafer, in order to ensure that the first ejector pins 410 and the second ejector pins 420 can lift up the wafer normally, the carrier 200 is provided with a plurality of first through holes 210 and a plurality of second through holes 220, the first ejector pins 410 and the first through holes 210 are arranged in a one-to-one correspondence manner, that is, the number of the first ejector pins 410 is more than three, specifically, the number of the first ejector pins 410 is at least three, and in the case that the number of the first ejector pins 410 is three, the three first through holes 210 are distributed at the positions of the vertexes of a triangle; correspondingly, the second through holes 220 are arranged in a one-to-one correspondence with the second ejector pins 420, the number of the second ejector pins 420 is also plural, specifically may be at least three, and in the case that the number of the second ejector pins 420 is three, the positions of the vertexes of the triangle where the three second through holes 220 are located are distributed. The second ejector pin 420 is inserted into the second through hole 220, so as to ensure that the second ejector pin 420 can also provide a supporting function for the wafer.
In addition, the first pins 410 are used for supporting the first wafer, the second pins 420 are used for supporting the second wafer, and in the process of arranging the plurality of first pins 410 (or the first through holes 210) and the plurality of second pins 420 (or the second through holes 220), it is required to ensure that the first wafer with the corresponding size can be supported on the plurality of first pins 410 and cannot fall off, and similarly, it is ensured that the second wafer with the corresponding size can be supported on the plurality of second pins 420 and cannot fall off. In addition, as described above, the diameter of the first wafer is larger than that of the second wafer, and further, in order to ensure that the first wafer and the second wafer can perform processing normally, the plurality of first pins 410 are circumferentially disposed on the outer circumferences of the plurality of second pins 420 along the direction perpendicular to the supporting direction.
The first ejector pin 410 is inserted into the first through hole 210, so as to ensure that the first ejector pin 410 can extend into the upper portion of the carrier 200 through the carrier 200, thereby achieving the purpose of lifting up the wafer. And, the first thimble 410 has a first stop position and a second stop position, and the second stop position is higher than the first stop position with respect to the carrier 200, that is, when the first thimble 410 is in the second stop position, the distance between the end of the first thimble 410 and the upper surface of the carrier 200 is greater than the distance between the end of the first thimble 410 and the upper surface of the carrier 200 when the first thimble 410 is in the first stop position. Specifically, the specific heights of the first stop and the second stop may be determined according to parameters such as the height of the initial position where the first press ring 510 is supported on the inner liner 320, which is not limited herein.
The rotary support 600 is a component having a motion capability in the process chamber, the rotary support 600 is mounted on an inner wall of the chamber body, and the rotary support 600 can achieve the purpose of generating a rotation motion by means of a rotating motor or the like, so that the rotary support 600 can reciprocally rotate between at least two positions in the chamber body. The main function of the rotary support 600 is to transmit the second pressing ring 520, so that the second pressing ring 520 can be located above the second wafer during the process of processing the second wafer, and the second pressing ring 520 can be pressed on the second wafer normally. The rotary support 600 may be specifically a frame-shaped structure, and at least one side of the rotary support 600 is provided with an opening, so that the rotary support 600 can rotate through the opening, and the first thimble 410 extends into the rotary support 600 through the opening, so as to ensure that the second compression ring 520 can be stably placed on the first thimble 410. Of course, as described above, the second thimble 420 is located inside the annular structure surrounded by the plurality of first thimbles 410, and in the case that the first thimbles 410 extend into the inner side of the rotary support 600 through the openings, the second thimbles 420 may also extend into the inner side of the rotary support 600.
Based on the process chamber with the structure, the process chamber is provided with a first working mode and a second working mode, and the first working mode and the second working mode respectively correspond to the processing procedures of the first wafer and the second wafer. In the first operation mode, the first thimble 410 supports the first wafer at the first stop position, at this time, the second thimble 420 is kept in the carrier 200 or the top end position of the second thimble 420 is lower than the first stop position, and when the carrier 200 is lifted to the process position, the first press ring 510 and the first wafer are sequentially stacked on the carrier 200. Specifically, the semiconductor processing apparatus is typically configured with a wafer transfer mechanism, such as a robot, that is used to transfer a first wafer into the processing chamber before the process begins, and to support the first wafer on the first pins 410, where the first pins 410 are in a first stop position before the wafer is transferred. Then, as the process proceeds, the carrier 200 performs a lifting motion, when the carrier 200 is lifted to the end of the first thimble 410, the carrier 200 may drive the first wafer supported on the first thimble 410 to perform a lifting motion together, and then, as the carrier 200 continues to lift, the first press ring 510 movably supported on the inner liner 320 may also be lifted together by the carrier 200, so that the first press ring 510 is pressed against the first wafer, and both of them are supported on the carrier 200. After the process is completed, the carrier 200 is lowered, and as the carrier 200 is lowered, the first press ring 510 may be carried on the inner liner 320, and then the first wafer may be carried on the first ejector pin 410, and the wafer transfer mechanism enters the process chamber to remove the first wafer carried on the first ejector pin 410, thereby completing the processing of the first wafer.
In the second working mode, under the action of a sheet conveying mechanism such as a mechanical arm, a second wafer can be placed on the second ejector pin 420, then the first ejector pin 410 is lifted, the first ejector pin 410 is located at the second stop position, the rotary support 600 is used for placing the second compression ring 520 on the first ejector pin 410 by generating rotary action, and then the rotary support 600 is reset, so that the rotary support 600 is prevented from influencing the lifting operation of the bearing 200. Then, the carrier 200 performs a lifting motion, when the carrier 200 is lifted to the end of the second ejector pin 420, the carrier 200 may drive the second wafer supported on the second ejector pin 420 to perform a lifting motion together, then, as the carrier 200 continues to lift, when the carrier 200 is lifted to the end of the first ejector pin 410, the carrier 200 may continue to drive the second press ring 520 supported on the first ejector pin 410 to perform a lifting motion together, and the second press ring 520 is pressed on the second wafer, then, the carrier 200 continues to lift, and then, the first press ring 510 movably supported on the liner 320 may also be lifted together by the carrier 200, so as to press the first press ring 510 on the second press ring 520, and sequentially stack the first press ring 510, the second press ring 520 and the second wafer 720 on the carrier 200, as shown in fig. 7. After the process is completed, the carrier 200 is lowered, and as the lowering process of the carrier 200 proceeds, the first press ring 510 may be carried on the inner liner 320, then the second press ring 520 may be carried on the first ejector pin 410, then the second wafer 720 may be carried on the second ejector pin 420, the rotary support 600 acts to remove the second press ring 520 carried on the first ejector pin 410, and the first ejector pin 410 is moved downward, so as to prevent the first ejector pin 410 from adversely affecting the wafer-taking operation, and then the wafer-conveying mechanism enters the process chamber to remove the second wafer 720 carried on the second ejector pin 420, thereby completing the processing process of the second wafer 720.
The embodiment of the application discloses a process chamber, by adopting the process chamber, two wafers with different sizes can be processed respectively, namely a first wafer and a second wafer, wherein the diameter of the first wafer is larger than that of the second wafer. The process chamber has a first working mode and a second working mode, in the first working mode, the first wafer can be supported on the first thimble 410 at the first stop position, and then the first press ring 510 and the first wafer can be ensured to be sequentially stacked on the carrier 200 along with the carrier 200 continuously lifting to the process position, so as to achieve the purpose of processing the first wafer. In the second working mode, the second wafer may be supported on the second ejector pin 420, the rotary support 600 may place the second pressing ring 520 on the first ejector pin 410 at the second stop position, and then, along with the continuous lifting of the carrier 200 to the process position, the first pressing ring 510, the second pressing ring 520 and the second wafer may be ensured to be stacked on the carrier 200 in sequence, so as to achieve the purpose of processing the second wafer.
In summary, when the process chamber is adopted to process wafers with different sizes, uncovering is not needed, the workload during the mutual switching between working modes is relatively small, and the influence on the processing progress of the wafers is relatively small.
As described above, the rotary support 600 may be mounted on the inner wall of the chamber body to transfer the second pressure ring 520 in a rotary manner. In another embodiment of the present application, optionally, the rotary supporting member 600 includes a supporting portion 610 and a rotating portion 620, where the supporting portion 610 and the rotating portion 620 are connected to each other, and the second pressing ring 520 may be supported on the supporting portion 610, and of course, when the rotating supporting portion 610 rotates to the first thimble 410 at the first stop position, the second pressing ring 520 may be transferred to the first thimble 410, and at this time, the supporting portion 610 no longer supports the second pressing ring 520. Wherein, supporting part 610 is equipped with dodges the mouth, dodges the mouth and is used for dodging first thimble 410 to guarantee that supporting part 610 can stretch into around first thimble 410 through dodging the mouth, at this moment, first thimble 410 stretches into the inboard of supporting part 610 through dodging the mouth, guarantees that second clamping ring 520 can be located directly over first thimble 410. The rotating portion 620 may be specifically connected to a rotating motor, so that the rotating portion 620 is rotatably installed on the chamber body, and under the action of the rotating portion 620, the supporting portion 610 can be driven to move the second pressing ring 520 in a manner of rotating relative to the chamber body, so that the second pressing ring 520 can be moved above the first thimble 410, and then be picked up by the first thimble 410. Of course, the supporting portion 610 may be driven to withdraw the second pressing ring 520 from the first thimble 410 by the rotating portion 620.
In order to prevent the second press ring 520 from moving relative to the rotary support portion 610 during rotation along with the rotary support portion 610, the second press ring 520 is guaranteed to be stably supported on the rotary support portion 610, optionally, the second press ring 520 is provided with a limiting block 530, the limiting block 530 is fixed on a first side surface of the second press ring 520, facing the support portion 610, of the bearing member 200 and the support portion 610, limiting grooves 230 are correspondingly formed in the bearing member 200 and the support portion 610, the limiting block 530 and the limiting grooves 230 are in limiting fit in a direction perpendicular to a supporting direction, and therefore whether the second press ring 520 and the support portion 610 are in a static state or the second press ring 520 moves relative to the chamber body along with the support portion 610 or the second press ring 520 and the bearing portion are in a static state, the position of the second press ring 520 can be guaranteed to have higher stability in a mode of being matched with the limiting grooves 230 at corresponding positions.
Specifically, the stopper 530 and the stopper groove 230 may be identical in shape and the same in size, thereby ensuring that they can form a stable stopper-fitting relationship in a direction perpendicular to the supporting direction. In addition, the number of the limiting blocks 530 and the number of the limiting grooves 230 can be one, in this case, the outer peripheral surface of the limiting block 530 can be in a non-circular structure, for example, the outer peripheral surface of the limiting block 530 can be in a quadrilateral structure with an inverted trapezoid, triangle or rectangle cross section, etc., by adopting the above technical scheme, the limiting block 530 can be ensured not to rotate relative to the limiting groove 230, and the position stability of the second compression ring 520 is further ensured to be relatively high. In the case that the number of the stopper 530 and the stopper groove 230 is plural, the outer circumferential surface of the stopper 530 may be a circular structural member, and in the case that the stopper 530 and the stopper groove 230 are in one-to-one correspondence, it is ensured that the second pressing ring 520 does not rotate relative to the supporting portion 610 (or the bearing portion) having the stopper groove 230. In addition, when the number of the stoppers 530 is plural, the plural stoppers 530 may be arranged in a straight line, or the plural stoppers 530 may be distributed around the supporting direction.
Further, the stopper 530 is a regular structure, that is, the outer circumferential surface of the stopper 530 is a regular structure, such as a cylindrical structure, or may be a prismatic structure. Also, the sectional area of the stopper 530 may be gradually reduced in the supporting direction and in a direction away from the first side surface. That is, the further away from the first side, the smaller the cross-sectional area of the stopper 530. For example, taking the example in which the cross section of the stopper 530 is circular, the smaller the diameter of the cross section away from the first side surface, and when the cross section of the stopper 530 is of a positive direction structure, the smaller the side length of the cross section away from the first side surface. Through adopting above-mentioned technical scheme, can reduce the degree of difficulty that stopper 530 and spacing groove mutually supported, in the stopper 530 of being convenient for stretches into the spacing inslot, and can promote the cooperation reliability between stopper 530 and the spacing groove to a certain extent.
Correspondingly, the inner wall of the limit groove matched with the limit block 530 can also be a regular structural member, and the cross section area of the limit groove is gradually increased in the supporting direction and along the direction away from the bottom of the limit groove, so that the matching reliability between the limit groove and the limit block 530 can be further enhanced, and the limit matching effect between the limit block 530 and the limit groove is further improved. Specifically, the number of the limiting blocks 530 and the number of the limiting grooves may be multiple, the limiting blocks 530 and the limiting grooves are correspondingly matched one by one, the shape and the size of each limiting block 530 are correspondingly the same, and the outer peripheral surface of each limiting block 530 and the inner wall surface of each limiting groove are both in a side surface-shaped structure with the round table.
In the process of arranging the first through holes 210 and the second through holes 220, the positions of the first through holes 210 and the second through holes 220 can be correspondingly determined according to the respective sizes of the first wafer and the second wafer, so as to ensure that the first wafer can be stably supported on the first ejector pins 410 and ensure that the second wafer can be stably supported on the second ejector pins 420. In an embodiment of the present application, the first through hole 210 and the second through hole 220 are disposed between two adjacent limiting grooves 230 on the carrier 200, in this case, when the first thimble 410 penetrating from the first through hole 210 is matched with the first wafer, the matching area between the first wafer and the first thimble 410 is relatively large, so that the limiting block 530 and the limiting groove 230 can be prevented from preventing the first thimble 410 from being matched with the first wafer, and further, the first thimble 410 can be ensured to stably and reliably support the first wafer. Similarly, by adopting the above technical solution, the second ejector pin 420 can be ensured to stably provide a supporting effect for the second wafer without being blocked by the limiting block 530 and the limiting groove 230.
In addition, the carrier 200 may be a circular structure, when the first through holes 210 and the second through holes 220 are arranged, the first through holes 210 and the second through holes 220 may be arranged along the radial direction of the carrier 200 at intervals, so as to ensure that the second through holes 220 are all located in the annular structure surrounded by the first through holes 210, and further ensure that the centers of the first through holes 210 and the centers of the second through holes 220 are located at the same point, so that when the process is performed, it is ensured that the first wafer and the second wafer can both be supported in the central area of the carrier 200, and it is ensured that the first press ring 510 can be pressed on the periphery of the first wafer relatively accurately, and the first press ring 510 and the second press ring 520 can both be pressed on the periphery of the second wafer relatively accurately.
As described above, the support 610 is provided with a relief opening to ensure that the second compression ring 520 can be precisely placed on the first thimble 410 by the rotary support 600. Optionally, the supporting portion 610 includes an annular body 611 and at least three supports 612, the annular body 611 is provided with the above-mentioned avoiding openings, each support 612 is connected to the inner side of the annular body 611, and each support 612 is provided with the above-mentioned limiting groove. Specifically, the support 612 and the annular body 611 may be integrally connected by welding or the like, or the annular body 611 and the at least three supports 612 may be integrally formed to improve the structural reliability of the support 610. Under the condition of adopting the technical scheme, the second pressing ring 520 can be accommodated inside the annular body 611, so that the probability of mutual contact between other structures in the chamber body and the second pressing ring 520 can be further reduced in the process that the supporting part 610 rotates along with the rotating part 620, and the position stability of the second pressing ring 520 in the transferring process is relatively high. In addition, to ensure that the second press ring 520 is relatively stably supported on the plurality of standoffs 612, at least three standoffs 612 may span an angle greater than 180 °.
Alternatively, the number of the holders 612 is three, and the three holders 612 enclose an acute triangle, that is, the centers of the three holders 612 are respectively located at three vertices of an acute triangle, so that the holders 612 can provide a stable supporting effect for the second compression ring 520 in the case that the number of the holders 612 is relatively small. In addition, the triangle formed by the three supports 612 may be an isosceles triangle, which may further improve the reliability of the positioning effect provided by the support base for the second compression ring 520. In addition, as described above, the carrier 200 is also provided with a plurality of limiting grooves 230, and when the number of the supporting seats 612 is three, three limiting grooves 230 may be provided on the carrier 200, and the sizes and the distribution of the three limiting grooves 230 on the carrier 200 are the same as those of the three supporting seats 612 in the supporting portion 610.
As described above, in performing the second mode of operation, the rotary support 600 can place the second compression ring 520 on the first thimble 410, and then the rotary support 600 is reset. Alternatively, by making the size of the cylindrical chamber body relatively large so that one side of the chamber body serves as a seating space for the rotary support 600, the rotary support 600 may be stopped in the seating space when the rotary support 600 is not required to operate. Alternatively, in another embodiment of the present application, a receiving space 120 communicating with the reaction chamber 110 is provided in the chamber body, and the receiving space 120 is located at the outer side of the carrier 200, for parking the second pressure ring 520 by the rotary support 600 in the first operation mode. That is, the chamber body is provided with the reaction chamber 110 and the receiving space 120, the receiving space 120 is located at the outer side of the carrier 200, that is, the receiving space 120 is located at one side of the reaction chamber 110, and the rotary support 600 may be parked in the receiving space 120 when the rotary support 600 is completed or an intervening process is not required. Specifically, the size of the accommodating space 120 may be determined according to parameters such as the size of the rotary support 600, and correspondingly, the size of the accommodating space 120 in the supporting direction may also be determined according to parameters such as the size and the mounting position of the rotary support 600.
Based on the process chamber disclosed in any one of the embodiments, the embodiment of the application also discloses a wafer processing method, which can be applied to any one of the process chambers, and can be used for processing a first wafer and a second wafer, wherein the diameter of the first wafer is larger than that of the second wafer. As shown in fig. 8, the wafer processing method includes:
s11, in the case that the working mode is the first working mode:
lifting the first thimble to a first stop position;
controlling the first wafer to be supported on the first thimble;
and lifting the bearing piece to a process position, and enabling the first compression ring and the first wafer to be sequentially overlapped on the bearing piece.
Specifically, the first wafer may be transferred into the process chamber using a transfer mechanism with the first wafer supported on a first ejector pin that is in a first stop position prior to transfer, and a second ejector pin that is held within the carrier or with the top end of the second wafer positioned below the first stop position. Then, along with the progress of technology, the carrier makes lifting motion, and when the carrier is lifted to the terminal of first thimble, the carrier can drive the first wafer of supporting on first thimble in the lump and make lifting motion, afterwards, along with the carrier continues the lifting, the first clamping ring of movably supporting on the inside lining body also can be lifted by the carrier in the lump to make first clamping ring pressure be held on first wafer, and both are supported on the carrier.
Correspondingly, after the process is completed, the bearing piece descends, and along with the descending process of the bearing piece, the first compression ring can be borne on the inner lining body, then, the first wafer can be borne on the first thimble, the wafer conveying mechanism enters the process chamber to take away the first wafer borne on the first thimble, and the processing process of the first wafer is completed.
S12, in the case that the working mode is the second working mode:
the control wafer is supported on the second thimble;
lifting the first thimble to a second stop position;
controlling the rotary supporting piece to rotate until the second compression ring is supported on the first thimble;
lifting the bearing piece, and enabling the first pressing ring, the second pressing ring and the second wafer to be sequentially overlapped on the bearing piece.
Specifically, under the second working mode, under the effect of a sheet conveying mechanism such as a mechanical arm, a second wafer can be placed on the second thimble, then the first thimble is lifted, the first thimble is positioned at a second stop position, the rotary supporting piece is used for placing the second pressing ring on the first thimble through generating rotary action, and then the rotary supporting piece is reset to prevent the rotary supporting piece from influencing the lifting operation of the bearing piece. Then, the bearing piece makes lifting movement, when the bearing piece is lifted to the tail end of the second thimble, the bearing piece can drive the second wafer supported on the second thimble to make lifting movement together, then, along with the continuous lifting of the bearing piece, when the bearing piece is lifted to the tail end of the first thimble, the bearing piece can continuously drive the second pressing ring supported on the first thimble to make lifting movement together, and the second pressing ring is pressed on the second wafer, then, the bearing piece continuously lifts, the first pressing ring movably supported on the inner lining body can also be lifted together by the bearing piece, so that the first pressing ring is pressed on the second pressing ring, and the first pressing ring, the second pressing ring and the second wafer are sequentially overlapped on the bearing piece.
Correspondingly, after the process is finished, the bearing piece descends, along with the descending process of the bearing piece, the first compression ring can be borne on the inner lining body, the second compression ring can be borne on the first thimble, the second wafer can be borne on the second thimble, the rotary supporting piece acts to take away the second compression ring borne on the first thimble, the first thimble is enabled to do descending motion, the first thimble is prevented from adversely affecting the wafer taking operation, the wafer conveying mechanism enters the process chamber, and the second wafer borne on the second thimble is taken away to finish the processing process of the second wafer.
Of course, the wafer processing method generally further includes the following steps:
s10, judging whether the working mode to be performed is a first working mode. Correspondingly, if the operation mode to be performed is the first operation mode, the process proceeds to step S11, otherwise, the process proceeds to step S12.
The foregoing embodiments of the present application mainly describe differences between the embodiments, and as long as there is no contradiction between different optimization features of the embodiments, the embodiments may be combined to form a better embodiment, and in view of brevity of line text, no further description is provided herein.
The foregoing is merely exemplary of the present application and is not intended to limit the present application. Various modifications and variations of the present application will be apparent to those skilled in the art. Any modification, equivalent replacement, improvement, etc. which come within the spirit and principles of the application are to be included in the scope of the claims of the present application.

Claims (10)

1. A process chamber is characterized by comprising a chamber body, a bearing piece, an inner lining body, a first thimble, a second thimble, a first compression ring, a second compression ring and a rotary supporting piece, wherein,
the bearing piece is arranged in the chamber body in a lifting manner and is used for supporting a first wafer and a second wafer with different sizes, and the diameter of the first wafer is larger than that of the second wafer;
the inner liner body is arranged on the cavity body, the first pressure ring is movably supported on the inner liner body, and the inner diameter size of the first pressure ring is larger than the inner diameter size of the second pressure ring and smaller than the outer diameter size of the second pressure ring;
the bearing piece is provided with a plurality of first perforations and a plurality of second perforations, the first ejector pins and the first perforations are arranged in a one-to-one correspondence manner, the first ejector pins penetrate through the first perforations and are provided with a first stop position and a second stop position which penetrate through the bearing piece, and the second stop position is higher than the bearing piece in height than the first stop position in height;
the second through holes and the second ejector pins are arranged in a one-to-one correspondence manner, and the second ejector pins penetrate through the second through holes;
the process chamber is provided with a first working mode and a second working mode, in the first working mode, the first thimble supports the first wafer at the first stop position, and when the bearing piece is lifted to the process position, the first compression ring and the first wafer are sequentially overlapped on the bearing piece;
in the second working mode, the second thimble supports the second wafer, the first thimble is located at a second stop position, the rotary supporting piece places the second pressing ring on the first thimble, and when the bearing piece is lifted to a process position, the first pressing ring, the second pressing ring and the second wafer are sequentially stacked on the bearing piece.
2. The process chamber of claim 1, wherein the rotary support comprises a support portion and a rotary portion that are coupled to each other, the second pressure ring is supportable on the support portion, the support portion is provided with an escape opening for escaping the first thimble, and the rotary portion is rotatably mounted to the chamber body to drive the support portion to move the second pressure ring.
3. The process chamber of claim 2, wherein the second pressure ring is provided with a stopper, the stopper is fixed on a first side surface of the second pressure ring facing the supporting portion, the bearing member and the supporting portion are both provided with a stopper groove, and the stopper groove are in a stopper fit in a direction perpendicular to the supporting direction.
4. A process chamber according to claim 3, wherein the stopper is a regular structure, and the sectional area of the stopper gradually decreases in the supporting direction and in a direction away from the first side.
5. The process chamber of claim 4, wherein the limiting groove has a cross-sectional area that gradually increases in the support direction and in a direction away from a bottom of the limiting groove.
6. A process chamber according to claim 3, wherein the first and second perforations are each disposed between two adjacent ones of the spacing grooves on the carrier, the first and second perforations being disposed in radially spaced relation.
7. A process chamber according to claim 3, wherein the support comprises an annular body and at least three supports, the annular body is provided with the relief opening, each support is connected to the inner side of the annular body, and each support is provided with the limit groove.
8. The process chamber of claim 7, wherein the number of pedestals is three and three pedestals enclose an acute triangle.
9. The process chamber of claim 1, wherein a receiving space is provided in the chamber body in communication with the reaction chamber, the receiving space being located outside of the carrier for the rotary support to park the second pressure ring in the first mode of operation.
10. A wafer processing method applied to the process chamber of any one of claims 1-9, the wafer processing method being used for processing a first wafer and a second wafer, the first wafer having a diameter greater than a diameter of the second wafer, the wafer processing method comprising:
in the case where the operation mode is the first operation mode:
lifting the first thimble to a first stop position;
controlling a first wafer to be supported on the first thimble;
lifting the bearing piece to a process position, and enabling a first compression ring and the first wafer to be sequentially overlapped on the bearing piece;
in the case where the operation mode is the second operation mode:
the control wafer is supported on the second thimble;
lifting the first thimble to a second stop position;
controlling the rotary supporting piece to rotate until the second compression ring is supported on the first thimble;
lifting the bearing piece, and enabling the first pressing ring, the second pressing ring and the second wafer to be sequentially overlapped on the bearing piece.
CN202110863982.7A 2021-07-29 2021-07-29 Process chamber and wafer processing method Active CN115692301B (en)

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