WO2023006060A1

WO2023006060A1 - Process chamber and wafer machining method

Info

Publication number: WO2023006060A1
Application number: PCT/CN2022/108900
Authority: WO
Inventors: 高晓丽; 宋海洋; 傅新宇
Original assignee: 北京北方华创微电子装备有限公司
Priority date: 2021-07-29
Filing date: 2022-07-29
Publication date: 2023-02-02
Also published as: CN115692301B; TWI827177B; TW202306001A; CN115692301A

Abstract

The present application discloses a process chamber and a wafer machining method. The process chamber comprises a chamber body, a carrier, an inner liner, a first pressure ring, a second pressure ring, an ejector pin device, and a pressure ring transfer device. The process chamber has a first operating mode and a second operating mode. In the first operating mode, the second pressure ring is located in a position to avoid the carrier; first, a first wafer is stacked on the carrier, and then the first pressing ring is stacked on an edge region of an upper surface of the first wafer. In the second operating mode, the pressure ring transfer device can enable the second pressure ring to be located above the carrier; first, a second wafer is stacked on the carrier, then the second pressure ring is stacked on an edge region of an upper surface of the second wafer, and then the first pressure ring is stacked on the second pressure ring. When the described process chamber is used to machine wafers of different sizes, it is not necessary to open a cover, and the workload when switching between working modes is relatively small, and the impact on the machining progress of the wafers is relatively small.

Description

Process Chambers and Wafer Processing Methods

technical field

The application belongs to the technical field of semiconductor processing, and in particular relates to a process chamber and a wafer processing method.

Background technique

With the continuous advancement of technology, the size requirements of wafers are also changing, and the demand for large-size wafers is increasing. However, due to the mature technology of small-size wafers, the demand is relatively large. Therefore, the current wafer In circular processing, it is usually necessary to process wafers of different sizes. However, if the size of the wafer to be processed changes, the processing accessories corresponding to the wafer also need to be changed accordingly, such as pressure rings, etc., to ensure that wafers of corresponding size and meeting requirements can be normally formed. At present, when processing wafers of different sizes, it is necessary to stop the machine and open the cover first, and then replace the corresponding processing accessories. The replacement workload is heavy, and it will have a great adverse effect on the processing progress of the wafer.

Contents of the invention

This application discloses a process chamber and a wafer processing method to solve the problem that when processing wafers of different sizes, it is necessary to stop the machine and open the cover, and then replace the corresponding processing device. Problems that have a significant adverse impact on schedule.

In order to solve the above problems, the embodiment of this application is implemented as follows:

In the first aspect, an embodiment of the present application provides a process chamber, including a chamber body, a carrier, an inner liner, a first pressure ring, a second pressure ring, a thimble device, and a pressure ring transfer device, wherein,

The carrying member is liftably arranged in the chamber body, the carrying member includes a carrying surface for carrying a first wafer and a second wafer, and the diameter of the first wafer is larger than that of the second wafer. the diameter of the wafer;

The inner liner is installed in the chamber body, the first pressure ring is movably supported on the inner liner, the inner diameter of the first pressure ring is larger than the inner diameter of the second pressure ring, and smaller than the outer diameter of the second pressure ring;

The process chamber has a first working mode and a second working mode. In the first working mode, the second pressure ring is located at a position avoiding the carrier; the thimble device can support the first Wafer; in the process of the carrier rising from the transfer position to the process position, the first wafer is first stacked on the carrier, and then the first pressure ring is stacked on the second an edge region of the top surface of a wafer;

In the second working mode, the pressure ring transfer device can make the second pressure ring above the carrier; the thimble device can simultaneously support the second wafer and the second wafer at different heights. The second pressure ring; in the process of the carrier rising from the transfer position to the process position, the second wafer is stacked on the carrier first, and then the second wafer is stacked on the carrier. The pressure ring is stacked on the edge area of the upper surface of the second wafer, and then the first pressure ring is stacked on the second pressure ring.

In the second aspect, the embodiment of the present application discloses a wafer processing method, which is applied to the above-mentioned process chamber. The wafer processing method is used to process the first wafer and the second wafer, and the diameter of the first wafer is greater than the diameter of the second wafer, the wafer processing method comprising:

When the working mode is the first working mode:

The second pressure ring is located at a position avoiding the carrier;

controlling the thimble device to support the first wafer;

Controlling the carrier to rise from the transfer position to the process position, in the process, the first wafer is stacked on the carrier first, and then the first pressure ring is stacked on the edge region of the upper surface of the first wafer;

In the case that the working mode is the second working mode:

controlling the ejector pin device to support the second wafer;

controlling the pressure ring transmission device so that the second pressure ring is located above the carrier;

controlling the thimble device to keep supporting the second wafer while supporting the second pressure ring;

Controlling the carrier to rise from the transfer position to the process position, in the process, the second wafer is stacked on the carrier first, and then the second pressure ring is stacked On the edge area of the upper surface of the second wafer, then make the first pressure ring stack on the second pressure ring.

The embodiment of the present application discloses a process chamber, which can process wafers of two different sizes respectively, namely the first wafer and the second wafer, wherein the diameter of the first wafer is larger than that of the second wafer. The diameter of the wafer. The above-mentioned process chamber has a first working mode and a second working mode. In the first working mode, the second pressure ring is located at a position avoiding the carrier. When the carrier is raised from the self-transfer position to the process position, the second pressure ring is first A wafer is stacked on the carrier, and then the first pressure ring is stacked on the edge area of the upper surface of the first wafer, which can ensure that the first wafer and the first pressure ring are stacked on the carrier in sequence, so that When processing the first wafer, the first wafer can be fixed by pressing the first pressing ring. In the second working mode, the pressure ring transfer device can make the second pressure ring above the carrier; when the carrier rises from the transfer position to the process position, the second wafer is first stacked on the carrier, and then The second pressure ring is superimposed on the edge region of the upper surface of the second wafer, and then the first pressure ring is superimposed on the second pressure ring, which can ensure that the second wafer, the second pressure ring and the first pressure ring are sequentially stacked on the carrier so that the second wafer can be fixed by the first pressing ring and the second pressing ring stacked on each other when processing the second wafer.

In summary, when processing wafers of different sizes using the above-mentioned process chamber, there is no need to open the cover, and the wafers of different sizes can be fixed by simply switching between the above two working modes, and the workload is relatively small , and the impact on the processing progress of the wafer is relatively small, so that the process efficiency can be improved.

Description of drawings

The drawings described here are used to provide a further understanding of the application and constitute a part of the application. The schematic embodiments and descriptions of the application are used to explain the application and do not constitute an improper limitation to the application. In the attached picture:

FIG. 1 is a schematic structural diagram of a process chamber disclosed in an embodiment of the present application;

Fig. 2 is a schematic diagram of the position change of the second pressure ring in the process chamber disclosed in the embodiment of the present application;

Fig. 3 is a schematic structural view of the carrier in the process chamber disclosed in the embodiment of the present application;

4 is a schematic cross-sectional view of a carrier in a process chamber disclosed in an embodiment of the present application;

Fig. 5 is a schematic structural view of the rotating support in the process chamber disclosed in the embodiment of the present application;

FIG. 6 is a schematic structural view of a support in a process chamber disclosed in an embodiment of the present application;

Fig. 7 is a cooperative schematic diagram of part of the structure of the process chamber disclosed in the embodiment of the present application when it is in the second working mode;

FIG. 8 is a flowchart of a wafer processing method disclosed in an embodiment of the present application.

Explanation of reference signs:

110-reaction chamber, 120-accommodating space,

200-carrier, 210-first perforation, 220-second perforation, 230-limiting groove,

310-lifting drive mechanism, 320-lining body,

410-first thimble, 420-second thimble,

510-first pressure ring, 520-second pressure ring, 530-limiting block,

600-rotation support, 610-support part, 611-ring body, 612-support, 620-rotation part,

720 - Second wafer.

Detailed ways

In order to make the purpose, technical solution and advantages of the present application clearer, the technical solution of the present application will be clearly and completely described below in conjunction with specific embodiments of the present application and corresponding drawings. Apparently, the described embodiments are only some of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in this application, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the scope of protection of this application.

The technical solutions disclosed in various embodiments of the present application will be described in detail below with reference to the accompanying drawings.

As shown in Figures 1-7, the embodiment of the present application discloses a process chamber, which can be applied in semiconductor process equipment for processing wafers. The process chamber includes a chamber body, a carrier 200 , a liner 320 , a first pressure ring 510 , a second pressure ring 520 , a thimble device and a pressure ring transfer device.

Wherein, the chamber body is the basic component of the process chamber, and other components in the process chamber can be installed on the chamber body. The shape of the chamber body can be a cylindrical structure, which is provided with a reaction chamber 110. The specific size of the body can be flexibly selected according to the actual situation, and is not limited here. In addition, the top of the chamber body is provided with an opening communicating with the reaction chamber 110 , and the opening cooperates with a cover plate in the semiconductor process equipment to seal the reaction chamber 110 . Optionally, taking the semiconductor process equipment as physical vapor deposition equipment (Physical Vapor Deposition, hereinafter referred to as PVD) as an example, the top of the reaction chamber 110 is provided with a target, and the target (equivalent to a cover plate) is connected to the top of the chamber body The openings fit together to close the reaction chamber 110 .

The carrier 200 is a component used to carry the wafer in the process chamber. The carrier 200 can be specifically an electrostatic chuck. With the help of the lifting drive mechanism 310, the carrier 200 can be arranged in the chamber body in a liftable manner; and, The carrier 200 includes a carrier surface, which is used to carry the first wafer and the second wafer, and the diameter of the first wafer is larger than the diameter of the second wafer. Of course, in the process, the carrier 200 can only The first wafer is carried alone, or the second wafer is carried alone. Specifically, the respective sizes of the first wafer and the second wafer can be 8 inches and 6 inches respectively. Of course, the sizes of the first wafer and the second wafer supported on the carrier 200 can also be other sizes. , is not limited here.

The inner liner 320 is installed in the chamber body (ie, the reaction chamber 110 ), and the inner liner 320 can form a process space in the chamber body to limit plasma distribution, so as to ensure the smooth progress of the etching work. The specific shape and size of the inner liner 320 can be correspondingly determined according to the specific shape and size of the chamber body, which is not limited here.

The first pressure ring 510 is movably supported on the inner liner 320. Both the first pressure ring 510 and the second pressure ring 520 are used to hold the wafer, so as to fix the wafer on the carrier 200 and avoid its produce displacement. Wherein, the first pressure ring 510 is used to hold a first wafer with a larger size, and the second pressure ring 520 is used to hold a second wafer with a smaller size. The inner diameter of the first pressure ring 510 is larger than the inner diameter of the second pressure ring 520, and the inner diameter of the first pressure ring 510 is smaller than the outer diameter of the second pressure ring 520, so that the second pressure ring 520 is lifted with the carrier 200 When reaching the bottom of the first pressure ring 510 , when the carrier 200 continues to lift, the second pressure ring 520 can support the first pressure ring 510 to make them lift together. Specifically, each actual size of the first pressure ring 510 and the second pressure ring 520 can be selected according to the specific size of the first wafer and the second wafer to be processed, which is not limited here.

Semiconductor process equipment is usually equipped with a transfer mechanism such as a manipulator, which can be used to transfer the first wafer or the second wafer into the process chamber. Wafer or wafer placement operation, specifically, before the process starts, the wafer transfer mechanism can pass the first wafer or the second wafer into the process chamber, and place it on the thimble device of the corresponding height, that is, complete the wafer placement operation , at this time, the first wafer or the second wafer is supported by the thimble device, and then the first wafer or the second wafer is transferred to the carrier 200 by raising the carrier 200 . After the process is completed, the carrier 200 is lowered to transfer the first wafer or the second wafer to the thimble device of the corresponding height, and then the first wafer or the second wafer is taken out from the thimble device by the transfer mechanism, that is Complete the slice operation.

The pressure ring transmission device can move the second pressure ring 520 from the position avoiding the carrier 200 to above the carrier 200. On this basis, the above-mentioned thimble device is also used to cooperate with the pressure ring transmission device by lifting and lowering to realize the second pressure ring. The second pressure ring 520 is transferred between the thimble device and the pressure ring transfer device, and can simultaneously support the second wafer and the second pressure ring 520 at different heights.

The process chamber has a first working mode and a second working mode. In the first working mode, the second pressure ring 520 is located at a position avoiding the carrier 200, that is, the second pressure ring 520 is vertically aligned with the carrier 200. There is no interference; the thimble device can support the first wafer (it is passed in by the transfer mechanism and placed on the thimble device); during the process of the carrier 200 rising from the transfer position to the process position, the first wafer is stacked first On the carrier 200, the first pressure ring 510 is finally superimposed on the edge region of the upper surface of the first wafer, so that it can be ensured that the first wafer and the first pressure ring are stacked on the carrier in sequence, so as to be processed When the first wafer is used, the first wafer may be fixed by pressing the first pressing ring.

In the second working mode, the pressure ring transfer device can make the second pressure ring 520 above the carrier 200; the thimble device can simultaneously support the second wafer and the second pressure ring 520 at different heights; In the process of raising the chip position to the process position, the second wafer is first stacked on the carrier 200, and then the second pressure ring 520 is stacked on the edge area of the upper surface of the second wafer, and then the first pressure ring is stacked on the upper surface of the second wafer. 510 is stacked on the second pressure ring 520 . In this way, it can be ensured that the second wafer, the second pressure ring and the first pressure ring are sequentially stacked on the carrier, so that when the second wafer is processed, the first pressure ring and the second pressure ring stacked on each other can pass The second wafer is fixed.

In the process chamber disclosed in the embodiment of the present application, when using the above process chamber to process wafers of different sizes, there is no need to open the cover, and only need to switch between the above two working modes can realize the processing of wafers of different sizes. Fixed, the workload is relatively small, and the impact on the processing progress of the wafer is relatively small, so that the process efficiency can be improved.

In some optional embodiments, the ejector pin device includes a plurality of first ejector pins 410 and a plurality of second ejector pins 420, both of which are components for lifting the wafer, in order to ensure that the first ejector pins 410 and the second ejector pins 420 can To lift the wafer normally, the carrier 200 is provided with a plurality of first through holes 210 and a plurality of second through holes 220, and the first ejector pins 410 and the first through holes 210 are provided in one-to-one correspondence. Specifically, the number of first ejector pins 410 is at least three and are distributed at intervals in the circumferential direction of the carrier 200 for jointly supporting the first wafer or the second pressure ring 520 . For example, when the number of the first thimbles 410 is three, the three first perforations 210 are distributed at the positions of the apexes of a triangle; The number of 420 is also multiple, specifically at least three, and distributed at intervals in the circumferential direction of the carrier 200 for jointly supporting the second wafer. For example, when the number of the second thimbles 420 is three, the three second through holes 220 are distributed at the positions of the vertices of a triangle. The second thimble 420 is disposed in the second through hole 220 to ensure that the second thimble 420 can also provide support for the wafer.

In addition, the first ejector pins 410 are used to support the first wafer, and the second ejector pins 420 are used to support the second wafer. In the process of the second perforation 220), it is necessary to ensure that the first wafer of the corresponding size can be supported on a plurality of first thimbles 410 without falling. on the second thimble 420 without falling off. And, as mentioned above, the diameter of the first wafer is greater than the diameter of the second wafer. Furthermore, in order to ensure that both the first wafer and the second wafer can normally perform processing work, along the direction perpendicular to the supporting direction, more The circumference where the first thimble pins 410 are located is arranged around the outer circumference of the circumference where the plurality of second thimble pins 420 are located.

The first thimble 410 is passed through the first through hole 210 , so as to ensure that the first thimble 410 can pass through the carrier 200 and protrude above the carrier 200 , so as to realize the purpose of lifting the first wafer or the second pressure ring 520 . Moreover, the top of the first thimble 410 can be located at the first stop position or the second stop position, both of which are higher than the carrying surface of the carrier 200 when it is located at the film transfer position, and the second stop position is higher than the first stop position, That is, when the tip of the first ejector pin 410 is at the first stop position or the second stop position, there is a distance from the bearing surface of the bearing member 200 . The second thimble 420 is passed through the second through hole 220, and the top of the second thimble 420 can be located at the third stop position, the third stop position is higher than the bearing surface of the carrier 200 when it is in the film delivery position, and lower than the second stop position. above the second stop. Optionally, the third stop position may be located at the same height as the above-mentioned first stop position, that is, the distance between the third stop position and the bearing surface of the carrier 200 is equal to that between the first stop position and the bearing surface of the carrier 200 Pitch. In the above-mentioned first working mode, the first thimble 410 supports the first wafer at the above-mentioned first stop position; in the above-mentioned second working mode, the second thimble 420 supports the second wafer at the above-mentioned third stop position, and the first The thimble 410 supports the second pressure ring 520 moved above the first thimble 410 by the pressure ring transmission device at the above-mentioned second stop position. Specifically, the specific heights of the first stop position, the second stop position and the third stop position can be determined according to parameters such as the height of the initial position of the first pressure ring 510 supported on the inner liner body 320 , and are not limited here.

There are many ways for the above pressure ring transmission device to move the second pressure ring 520 from the position avoiding the carrier 200 to above the carrier 200. In some optional embodiments, the pressure ring transmission device includes a rotating support 600 , the rotating support member 600 is used to move the second pressing ring 520 to the top of the carrier 200 or move away from the carrier 200 by rotation. Specifically, the rotating support 600 is a component capable of movement in the process chamber, and the rotating support 600 can be installed on the inner wall of the chamber body, and the rotating support 600 can realize the rotation action by means of a rotating motor and other components. The purpose is thereby to enable the rotating support 600 to reciprocate between at least two positions in the chamber body. The main function of the rotating support 600 is to transport the second pressure ring 520, so that the second pressure ring 520 can be located above the second wafer, so that the second pressure ring 520 can be normally pressed on the second wafer . The rotating support 600 can specifically be a frame-like structure, and at least one side thereof is provided with an opening, so that the rotating support 600 can rotate through the opening, and the first thimble 410 can extend into the rotating support 600 through the opening, It is ensured that the second pressure ring 520 can be stably placed on the first thimble 410 . Of course, as mentioned above, the second thimble 420 is located inside the ring structure surrounded by the plurality of first thimbles 410. It may protrude into the inner side of the rotation support 600 .

Based on the process chamber with the above structure, the first working mode and the second working mode correspond to the processing of the first wafer and the second wafer respectively. In the first working mode, the second pressure ring 520 is located at a position avoiding the carrier 200; the first thimble 410 supports the first wafer at the first stop position, and at this time, the top of the second thimble 420 remains on the carrier 200 At a position below the carrying surface or at a position lower than the first stop position, when the carrier 200 rises from the transfer position to the process position, the first wafer is stacked on the carrier 200 first, and then the first pressure ring 510 Overlapping on the edge region of the upper surface of the first wafer, like this, can ensure that the first wafer and the first pressure ring are stacked on the carrier in sequence, so that the first wafer can be pressed against by the first pressure ring when processing the first wafer The first wafer is fixed. Specifically, before the process starts, the first thimble 410 is placed at the first stop position, and then the first wafer can be transferred into the process chamber by using the transfer mechanism, and the first wafer can be transferred to the first thimble 410. Support the first wafer at the first stop position by the first ejector pin 410. Afterwards, the carrier 200 lifts up from the self-transmission chip position. During this process, the carrier 200 can lift the first wafer supported on the first thimble 410, separate it from the first thimble 410, and follow the carrier 200. together to make a lifting movement, that is, to realize stacking the first wafer on the carrier 200, and then, as the carrier 200 continues to lift, the first pressure ring 510 movably supported on the inner liner 320 can also be lifted The carrier 200 is lifted and lifted, so that the first pressure ring 510 is pressed on the first wafer, and both of them are stacked on the carrier 200 . After the process is completed, the carrier 200 descends. As the carrier 200 descends, the first pressure ring 510 can be carried on the inner liner 320, and then the first wafer can be carried on the first stop located above. On the first thimble 410 at the first position, the film transfer mechanism enters the process chamber to take away the first wafer carried on the first thimble 410 to complete the processing of the first wafer.

In the second working mode, the second wafer can be placed on the second thimble 420 at the above-mentioned third stop position under the action of a film transfer mechanism such as a manipulator, and then the first thimble 410 is lifted to make the first thimble 410 is located at the second stop position, and the rotating support 600 places the second pressure ring 520 on the first thimble 410 by generating a rotating action, and then the rotating supporting member 600 is reset to prevent the rotating supporting member 600 from lifting the carrier 200 make an impact. Afterwards, the carrier 200 performs a lifting movement. During this process, the carrier 200 can lift the second wafer supported on the second thimble 420 to separate it from the second thimble 420, and lift together with the carrier 200 movement, that is, the second wafer is stacked on the carrier 200, and then, as the carrier 200 continues to lift, the carrier 200 can hold up the second pressure ring 520 supported on the first thimble 410, so that it Separate from the first thimble 410, and lift together with the carrier 200, and press the second pressure ring 520 on the second wafer, after that, the carrier 200 continues to lift to be movably supported by the inner liner The first pressure ring 510 on the 320 can also be lifted up by the carrier 200, so that, as shown in FIG. The second pressure ring 520 and the first pressure ring 510 are sequentially stacked on the carrier 200 . After the process is completed, the carrier 200 descends. As the carrier 200 descends, the first pressure ring 510 can be carried on the inner liner 320, and then the second pressure ring 520 can be carried on the second stop. Then, the second wafer 720 can be carried on the second thimble 420 at the third stop position, and the rotating support 600 will move the second pressure ring carried on the first thimble 410 520, and make the first thimble 410 do a downward movement to prevent the first thimble 410 from adversely affecting the work of picking up the film. 720 is removed, and the processing of the second wafer 720 is completed.

The embodiment of the present application discloses a process chamber, which can process wafers of two different sizes respectively, namely the first wafer and the second wafer, wherein the diameter of the first wafer is larger than that of the second wafer. The diameter of the wafer. The above-mentioned process chamber has a first working mode and a second working mode. In the first working mode, the second pressure ring 520 is located at a position avoiding the carrier 200, and when the carrier 200 rises from the self-transfer film position to the process position, The first wafer is stacked on the carrier 200 first, and then the first pressure ring 510 is stacked on the edge area of the upper surface of the first wafer, which can ensure that the first wafer and the first pressure ring 510 are stacked in sequence. On the carrier 200, the first wafer can be pressed and fixed by the first pressure ring 510 when processing the first wafer. In the second working mode, the pressure ring transfer device can make the second pressure ring 520 above the carrier 200; in the process of the carrier 200 rising from the transfer position to the process position, the second wafer is first stacked on the carrier 200, then make the second pressure ring 520 superimposed on the edge area of the upper surface of the second wafer, and then make the first pressure ring 510 superimpose on the second pressure ring 520, which can ensure that the second wafer, the second pressure ring The ring and the first pressing ring are sequentially stacked on the carrier 200 so that the second wafer can be fixed by the stacked first pressing ring 510 and the second pressing ring 520 when processing the second wafer.

As mentioned above, the rotation supporter 600 may be installed on the inner wall of the chamber body to transfer the second pressure ring 520 by rotation. In another embodiment of the present application, optionally, the rotating support 600 includes a supporting part 610 and a rotating part 620, the supporting part 610 and the rotating part 620 are connected to each other, and the supporting part 610 is used to support the second pressure ring 520, of course When the rotating support part 610 rotates to the first thimble 410 at the second stop position, the second pressure ring 520 can be transferred to the first thimble 410, and at this time, the support part 610 is no longer supported by the first thimble. Second pressure ring 520. Wherein, the support portion 610 is provided with an avoidance port, and the avoidance port is used to avoid the first thimble 410, so as to ensure that the support portion 610 can extend into the surrounding of the first thimble 410 through the avoidance port. Insert into the inner side of the supporting part 610 to ensure that the second pressure ring 520 can be located directly above the first thimble 410 . Specifically, the rotating part 620 can be connected with a rotating motor, so that the rotating part 620 is rotatably installed on the chamber body, and under the action of the rotating part 620, the support part 610 can be driven to rotate, so that it can move by rotating relative to the chamber body The second pressure ring 520 enables the second pressure ring 520 to be moved above the first thimble 410 and then picked up by the first thimble 410 . Of course, under the action of the rotating part 620 , the supporting part 610 can also be driven to retrieve the second pressure ring 520 from the first thimble 410 .

In the process of rotating with the rotating support part 610, in order to prevent the second pressing ring 520 from moving relative to the rotating supporting part 610, ensure that the second pressing ring 520 can be stably supported on the rotating supporting part 610. Optionally, the second The pressure ring 520 is provided with a limit block 530, and the limit block 530 is fixed on the first side of the second pressure ring 520 facing the support portion 610. Correspondingly, both the carrier 200 and the support portion 610 are provided with a limit groove 230, and the limit block 530 and the limit groove 230 are fitted in the upper limit of the direction perpendicular to the supporting direction, and then no matter whether the second pressure ring 520 and the support part 610 are in a static state, or the second pressure ring 520 moves with the support part 610 relative to the chamber body, and the second The second pressure ring 520 and the bearing part are in a static state, and both can ensure a relatively high stability of the position of the second pressure ring 520 by cooperating with the limiting groove 230 at the corresponding position.

Specifically, the shape of the limiting block 530 and the limiting groove 230 can be made the same, and the size of the two can be equal, so as to ensure that the two can form a stable limiting fit relationship in a direction perpendicular to the supporting direction. In addition, the number of the limiting block 530 and the limiting groove 230 can be one. In this case, the outer peripheral surface of the limiting block 530 can be a non-circular structure, such as the outer peripheral surface of the limiting block 530 can be a section It is a quadrilateral structure such as an inverted trapezoid, triangle or rectangle. By adopting the above technical solution, it can ensure that the limit block 530 will not rotate relative to the limit groove 230, and further ensure that the position stability of the second pressure ring 520 is relatively high. In the case where there are multiple limit blocks 530 and limit grooves 230, the outer peripheral surface of the limit block 530 can be a circular structural member. In the case of corresponding matching, it can be ensured that the second pressure ring 520 will not rotate relative to the supporting part 610 (or bearing part) having the limiting groove 230 . In addition, when there are multiple limiting blocks 530, the plurality of limiting blocks 530 may be arranged in a straight line, or the plurality of limiting blocks 530 may be distributed around the supporting direction.

Further, the limiting block 530 is a regular structural member, that is, the outer peripheral surface of the limiting block 530 is a regular-shaped structure, such as a cylindrical structural member, or may also be a prismatic structure. In addition, the cross-sectional area of the limiting block 530 can gradually decrease in the supporting direction and in the direction away from the first side. That is to say, the farther the part of the limiting block 530 is from the first side, the smaller its cross-sectional area. For example, taking the cross section of the limiting block 530 as a circular example, the diameter of the section farther away from the first side is smaller. The side length of the section is smaller. By adopting the above-mentioned technical scheme, it is possible to reduce the difficulty of cooperating between the limiting block 530 and the limiting groove, facilitate the extending of the limiting block 530 into the limiting groove, and improve the distance between the limiting block 530 and the limiting groove to a certain extent. Coordination reliability between.

Correspondingly, the inner wall of the limiting groove matched with the limiting block 530 can also be a regular structural member, and the cross-sectional area of the limiting groove gradually decreases in the direction of support and away from the bottom of the limiting groove, This can further enhance the cooperation reliability between the limiting groove and the limiting block 530 , and further improve the effect of the limiting cooperation between the limiting block 530 and the limiting groove. Specifically, the number of the limiting blocks 530 and the limiting grooves can be multiple, and the plurality of limiting blocks 530 and the plurality of limiting grooves are matched one by one, and the shape and size of each limiting block 530 are correspondingly the same, and each The outer peripheral surface of the limiting block 530 and the inner wall surfaces of each limiting groove are both frustum-shaped structures.

In the process of arranging the first through-holes 210 and the second through-holes 220, the positions of the plurality of first through-holes 210 and the plurality of second through-holes 220 can be correspondingly determined according to the respective sizes of the first wafer and the second wafer, so as to It is ensured that the first wafer can be stably supported on the first ejector pins 410 , and that multiple second wafers can be stably supported on the second ejector pins 420 . In a specific embodiment of the present application, the above-mentioned limiting grooves on the carrier 200 are multiple, and are arranged at intervals along the circumferential direction of the carrier 200; Between two adjacent limiting grooves 230, in this case, when the first thimble 410 protruding from the first through hole 210 cooperates with the first wafer, there is a gap between the first wafer and the first thimble 410. The matching area between them is relatively large, which can prevent the limiting block 530 and the limiting groove 230 from interfering with the cooperation between the first thimble 410 and the first wafer, thereby ensuring that the first thimble 410 can stably and reliably support the first wafer. Similarly, by adopting the above technical solution, it can be ensured that the second thimble 420 is not hindered by the limiting block 530 and the limiting groove 230 , and can stably provide support for the second wafer.

In addition, the bearing member 200 can be specifically a circular structural member. When arranging the first through-hole 210 and the second through-hole 220, the first through-hole 210 and the second through-hole 220 can also be distributed on the circumference of different radii, that is, along the bearing The radial intervals of the parts 200 are arranged so as to ensure that the second through holes 220 are all located within the ring structure surrounded by the first through holes 210, thereby ensuring that the centers of the plurality of first through holes 210 are substantially aligned with the centers of the plurality of second through holes 220. located at the same point, so that during the process, it is ensured that both the first wafer and the second wafer can be supported on the central area of the carrier 200, and it can be ensured that the first pressure ring 510 can be more accurately pressed on the first wafer The outer circumference of the wafer, both the first pressure ring 510 and the second pressure ring 520 can be more accurately pressed on the outer circumference of the second wafer.

As mentioned above, the support portion 610 is provided with a relief opening, so as to ensure that the second pressure ring 520 can be accurately placed on the first thimble 410 by the rotating support member 600 . Optionally, the support part 610 includes an annular body 611 and at least three supports 612, the annular body 611 is provided with the above-mentioned escape opening, each support 612 is connected to the inner side of the annular body 611, and each support 612 All are provided with the above-mentioned limiting grooves. Specifically, the support 612 and the annular body 611 can be connected as one by means of welding, or the annular body 611 and at least three supports 612 can be integrally formed to improve the structural reliability of the support part 610 . In the case of adopting the above technical solution, the second pressure ring 520 can be accommodated inside the annular body 611, so that when the supporting part 610 rotates with the rotating part 620, other structures in the chamber body can be further reduced. The probability that the second pressure rings 520 are in contact with each other ensures relatively high positional stability of the second pressure ring 520 during the process of being transported. In addition, in order to ensure that the second pressure ring 520 can be relatively stably supported on the plurality of supports 612, the angle spanned by at least three supports 612 may be greater than 180°.

Optionally, the number of supports 612 is three, and the connecting line of the centers of the three supports 612 forms an acute triangle, that is, the centers of the three supports 612 are respectively located on three vertices of an acute triangle, so that In the case that the number of the supports 612 is relatively small, it is ensured that the supports 612 can provide stable support for the second pressure ring 520 . In addition, the triangle formed by the three supports 612 can also be an isosceles triangle, which can further improve the reliability of the positioning effect provided by the support seats for the second pressure ring 520 . In addition, as mentioned above, the bearing member 200 is also provided with a plurality of limiting grooves 230. In the case where the number of supports 612 is three, three limiting grooves 230 can also be provided on the bearing member 200, and the The size and distribution of the three limiting slots 230 on the bearing member 200 are correspondingly the same as the size and distribution of the three seats 612 in the supporting part 610 .

As mentioned above, in the second working mode, the rotating support 600 can place the second pressure ring 520 on the first thimble 410 , and then the rotating support 600 is reset. Optionally, by making the size of the cylindrical chamber body relatively large, so that one side of the chamber body is used as the installation space for the rotating support 600, the rotating support can be used when the rotating support 600 is not required to work. The piece 600 stays in the aforesaid installation space. Optionally, in another embodiment of the present application, the chamber body is provided with an accommodating space 120 communicating with the reaction chamber 110, and the accommodating space 120 is located on the outside of the carrier 200 for rotating in the first working mode. The supporting member 600 can move the second pressure ring 520 into the accommodation space 120 to park the second pressure ring 520 . That is to say, the chamber body is provided with a reaction chamber 110 and an accommodating space 120, the accommodating space 120 is located on the outside of the carrier 200, that is, the accommodating space 120 is located on one side of the reaction chamber 110, and the rotating support 600 completes the work or not. When an intervention process is required, the rotating support 600 can be parked in the accommodation space 120 . Specifically, the size of the accommodating space 120 can be determined according to parameters such as the size of the rotating support 600 , and correspondingly, the size of the accommodating space 120 in the supporting direction can also be determined according to the size and installation position of the rotating support 600 .

Based on the process chamber disclosed in any of the above-mentioned embodiments, the embodiment of the present application also discloses a wafer processing method. The wafer processing method can be applied in any of the above-mentioned process chambers, and the wafer processing method can be used to process The first wafer and the second wafer, the diameter of the first wafer is larger than the diameter of the second wafer. As shown in Figure 8, wafer processing methods include:

S10, determine whether the working mode to be carried out is the first working mode; if so, enter the first working mode (execute step S11 to step S13); if not, enter the second operating mode (execute step S21 to step S24);

When the working mode is the first working mode:

S11, the second pressure ring 520 is located at a position avoiding the carrier 200;

S12, controlling the thimble device to support the first wafer;

S13. Control the carrier 200 to rise from the transfer position to the process position. During this process, the first wafer is first stacked on the carrier 200, and then the first pressure ring 510 is stacked on the upper surface of the first wafer. edge area;

In the case that the working mode is the second working mode:

S21, controlling the thimble device to support the second wafer;

S22. Control the pressure ring transmission device so that the second pressure ring 520 is located above the carrier 200;

S23. Control the thimble device to keep supporting the second wafer and support the second pressure ring 520 at the same time;

S24. Control the carrier 200 to rise from the transfer position to the process position. During this process, the second wafer is first stacked on the carrier 200, and then the second pressure ring 520 is stacked on the upper surface of the second wafer. The edge region, and then the first pressure ring 510 is superimposed on the second pressure ring 520 .

It should be noted that, in practical applications, the above step S10 may be omitted. In this case, the first working mode or the second working mode may be selectively entered in a preset manner or according to an input instruction.

In some optional embodiments, the thimble device includes a plurality of first thimbles 410 and a plurality of second thimbles 420, on this basis, the above step S12 includes:

Lifting the first ejector pin 410 to the first stop position to support the first wafer;

Above-mentioned step S21 comprises:

Lifting the second ejector pin 420 to the third stop position to support the second wafer;

Above-mentioned step S23 comprises:

Lift the first thimble 410 to the second stop position to support the second pressure ring 520 .

Specifically, before the process starts, the first thimble 410 is placed at the first stop position, and then the first wafer can be transferred into the process chamber by using the transfer mechanism, and the first wafer can be transferred to the first thimble 410. Support the first wafer at the first stop position by the first ejector pin 410. Afterwards, the carrier 200 lifts up from the self-transmission chip position. During this process, the carrier 200 can lift the first wafer supported on the first thimble 410, separate it from the first thimble 410, and follow the carrier 200. together to make a lifting movement, that is, to realize stacking the first wafer on the carrier 200, and then, as the carrier 200 continues to lift, the first pressure ring 510 movably supported on the inner liner 320 can also be lifted The carrier 200 is lifted and lifted, so that the first pressure ring 510 is pressed on the first wafer, and both of them are stacked on the carrier 200 . After the process is completed, the carrier 200 descends. As the carrier 200 descends, the first pressure ring 510 can be carried on the inner liner 320, and then the first wafer can be carried on the first stop located above. On the first thimble 410 at the first position, the film transfer mechanism enters the process chamber to take away the first wafer carried on the first thimble 410 to complete the processing of the first wafer.

In the second working mode, the second wafer can be placed on the second thimble 420 at the above-mentioned third stop position under the action of a film transfer mechanism such as a manipulator, and then the first thimble 410 is lifted to make the first thimble 410 is located at the second stop position, and the rotating support 600 places the second pressure ring 520 on the first thimble 410 by generating a rotating action, and then the rotating supporting member 600 is reset to prevent the rotating supporting member 600 from lifting the carrier 200 make an impact. Afterwards, the carrier 200 performs a lifting movement. During this process, the carrier 200 can lift the second wafer supported on the second thimble 420 to separate it from the second thimble 420, and lift together with the carrier 200 movement, that is, the second wafer is stacked on the carrier 200, and then, as the carrier 200 continues to lift, the carrier 200 can hold up the second pressure ring 520 supported on the first thimble 410, so that it Separate from the first thimble 410, and lift together with the carrier 200, and press the second pressure ring 520 on the second wafer, after that, the carrier 200 continues to lift, and can be movably supported by the inner liner The first pressure ring 510 on the 320 can also be lifted up by the carrier 200, so that, as shown in FIG. The second pressure ring 520 and the first pressure ring 510 are sequentially stacked on the carrier 200 . After the process is completed, the carrier 200 descends. As the carrier 200 descends, the first pressure ring 510 can be carried on the inner liner 320, and then the second pressure ring 520 can be carried on the second stop. Then, the second wafer 720 can be carried on the second thimble 420 at the third stop position, and the rotating support 600 will move the second pressure ring carried on the first thimble 410 520, and make the first thimble 410 do a downward movement to prevent the first thimble 410 from adversely affecting the work of picking up the film. 720 is removed, and the processing of the second wafer 720 is completed.

The above-mentioned embodiments of this application focus on the differences between the various embodiments. As long as the different optimization features of the various embodiments are not contradictory, they can be combined to form a better embodiment. Considering the simplicity of the text, here No longer.

The above descriptions are only examples of the present application, and are not intended to limit the present application. For those skilled in the art, various modifications and changes may occur in this application. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included within the scope of the claims of the present application.

Claims

A process chamber, characterized by comprising a chamber body, a carrier, an inner liner, a first pressure ring, a second pressure ring, a thimble device, and a pressure ring transmission device, wherein,

The carrying member is liftably arranged in the chamber body, the carrying member includes a carrying surface for carrying a first wafer and a second wafer, and the diameter of the first wafer is larger than that of the second wafer. the diameter of the wafer;

The inner liner is installed in the chamber body, the first pressure ring is movably supported on the inner liner, the inner diameter of the first pressure ring is larger than the inner diameter of the second pressure ring, and smaller than the outer diameter of the second pressure ring;

The process chamber has a first working mode and a second working mode. In the first working mode, the second pressure ring is located at a position avoiding the carrier; the thimble device can support the first Wafer; in the process of the carrier rising from the transfer position to the process position, the first wafer is first stacked on the carrier, and then the first pressure ring is stacked on the second an edge region of the top surface of a wafer;

In the second working mode, the pressure ring transfer device can make the second pressure ring above the carrier; the thimble device can simultaneously support the second wafer and the second wafer at different heights. The second pressure ring; in the process of the carrier rising from the transfer position to the process position, the second wafer is stacked on the carrier first, and then the second wafer is stacked on the carrier. The pressure ring is stacked on the edge area of the upper surface of the second wafer, and then the first pressure ring is stacked on the second pressure ring.
The process chamber according to claim 1, wherein a plurality of first through holes and a plurality of second through holes are provided on the carrier; the thimble device includes a plurality of first thimbles and a plurality of second thimbles ,in,

The first thimble and the first through hole are provided in one-to-one correspondence, the first thimble is passed through the first through hole, and the top end of the first thimble can be located at the first stop position or the second stop position , both of which are higher than the carrying surface of the carrier when it is at the film transfer position, and the second stop position is higher than the first stop position;

The second perforation and the second thimble are arranged in one-to-one correspondence, the second thimble is passed through the second perforation, and the top end of the second thimble can be located at the third stop position, and the third thimble The stop position is higher than the bearing surface of the carrier when it is at the film transfer position, and lower than the second stop position;

In the first working mode, the first ejector pin supports the first wafer at the first stop position;

In the second working mode, the second thimble supports the second wafer at the third stop position, and the first thimble is supported at the second stop position by the pressure ring transfer device. to the second pressure ring above the first thimble.
The process chamber according to claim 1 or 2, wherein the pressure ring transfer device comprises a rotating support for moving the second pressure ring to the carrier by rotation above, or removed from above the carrier.
The process chamber according to claim 3, wherein the rotating support member comprises a supporting part and a rotating part connected to each other, and the supporting part is used to support the second pressure ring; the supporting part is provided with The avoidance port is used to avoid the thimble device, and the rotating part is rotatably installed on the chamber body to drive the supporting part to rotate.
The process chamber according to claim 4, wherein the second pressure ring is provided with a limit block, and the limit block is fixed on the first side of the second pressure ring facing the support part, so Both the bearing member and the supporting part are provided with limiting grooves, and the limiting blocks cooperate with the limiting grooves in a direction perpendicular to the supporting direction.
The process chamber according to claim 5, wherein the cross-sectional area of the limiting block gradually decreases in the direction of the support and away from the first side, and the limiting groove The cross-sectional area gradually decreases in the supporting direction and in a direction away from the first side.
The process chamber according to claim 5, characterized in that there are a plurality of limiting grooves on the carrier and are arranged at intervals along the circumferential direction of the carrier; the first through hole and the The second through-holes are all arranged between two adjacent limiting grooves on the carrier, and the first through-holes and the second through-holes are distributed on circumferences with different radii.
The process chamber according to claim 5, wherein the support part comprises an annular body and at least three supports, the annular body is provided with the escape port, and each of the supports is connected to The inner side of the annular body and each of the supports are provided with the limiting grooves.
The process chamber according to claim 8, wherein the number of the supports is three, and a line connecting the centers of the three supports forms an acute triangle.
The process chamber according to claim 1, wherein an accommodating space communicating with the reaction chamber is provided in the chamber body, the accommodating space is located outside the carrier, and is used for In the working mode, the pressure ring transmission device can move the second pressure ring into the accommodation space and park the second pressure ring.
A wafer processing method, applied to the process chamber described in any one of claims 1-10, the wafer processing method is used to process a first wafer and a second wafer, the first wafer The diameter is larger than the diameter of the second wafer, and the wafer processing method includes:

When the working mode is the first working mode:

The second pressure ring is located at a position avoiding the carrier;

controlling the thimble device to support the first wafer;

Controlling the carrier to rise from the transfer position to the process position, in the process, the first wafer is stacked on the carrier first, and then the first pressure ring is stacked on the edge region of the upper surface of the first wafer;

In the case that the working mode is the second working mode:

controlling the ejector pin device to support the second wafer;

controlling the pressure ring transmission device so that the second pressure ring is located above the carrier;

controlling the thimble device to keep supporting the second wafer while supporting the second pressure ring;

Controlling the carrier to rise from the transfer position to the process position, in the process, the second wafer is stacked on the carrier first, and then the second pressure ring is stacked On the edge area of the upper surface of the second wafer, then make the first pressure ring stack on the second pressure ring.
The wafer processing method according to claim 11, wherein it is applied to the process chamber according to claim 2;

The controlling the thimble device to support the first wafer includes:

Lifting the first ejector pin to a first stop position to support the first wafer;

The controlling the thimble device to support the second wafer includes:

Lifting the second ejector pin to a third stop position to support the second wafer;

The controlling the thimble device to keep supporting the second wafer while supporting the second pressure ring includes:

Lifting the first thimble to the second stop position to support the second pressure ring.