CN113881931A - CVD device and dispersed air intake method thereof - Google Patents
CVD device and dispersed air intake method thereof Download PDFInfo
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- CN113881931A CN113881931A CN202111180421.3A CN202111180421A CN113881931A CN 113881931 A CN113881931 A CN 113881931A CN 202111180421 A CN202111180421 A CN 202111180421A CN 113881931 A CN113881931 A CN 113881931A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45587—Mechanical means for changing the gas flow
- C23C16/45591—Fixed means, e.g. wings, baffles
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45561—Gas plumbing upstream of the reaction chamber
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
- C23C16/4582—Rigid and flat substrates, e.g. plates or discs
- C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
Abstract
A CVD device comprises an outer cavity and an outer cavity cover, wherein an inner reaction cavity A, an inner reaction cavity B and an inner reaction cavity C are arranged in the outer cavity; the outer cavity cover is provided with a worm speed reducer, two lifting devices are arranged on the outer cavity cover, the lifting frames are arranged at the tops of the two lifting devices, the spline shaft is rotatably arranged in the worm speed reducer, one end of the spline shaft is fixedly connected with the lifting frames, the other end of the spline shaft penetrates through the outer cavity cover and extends towards the inner cavity, the spline shaft faces towards the one end of the outer cavity and is fixedly connected with a mounting plate, a first inner cavity cover, a second inner cavity cover and a third inner cavity cover are arranged on the mounting plate and correspond to the inner reaction cavity A, the inner reaction cavity B and the inner reaction cavity C, and a bracket is fixedly arranged on one side of the first inner cavity cover, the second inner cavity cover and the third inner cavity cover facing towards the bottom of the outer cavity.
Description
Technical Field
The invention relates to the technical field of CVD (chemical vapor deposition) processes, in particular to a CVD device and a dispersed air inlet method thereof.
Background
The CVD process is a chemical technology for generating a compact film on the surface of a substrate by carrying out deposition reactions such as thermal decomposition, chemical synthesis and the like on the surface of the substrate through one or more chemical gases under the closed condition of specific temperature and vacuum degree, and can achieve the purpose of changing the property and the gradient of the film by changing the chemical components of the introduced gases.
The reaction process of the existing CVD process is mostly finished in a fixed chamber, the deposition process is finished by a method of alternately introducing different precursors, and different chemical gases react in a pipeline in the process of actually switching the precursors and are accumulated to easily cause blockage.
Secondly, the reaction chamber of the existing CVD apparatus is generally a chamber, so that when the pipe of the chamber is blocked, the whole CVD apparatus is blocked.
Disclosure of Invention
The present invention provides a CVD apparatus and a method for dispersing gas inflow thereof, so as to solve the problem of the prior art that different chemical gases are accumulated in a pipeline during the actual precursor switching process of the CVD apparatus, which is proposed in the prior art, and easily cause blockage.
In order to solve the technical problem, the invention adopts the following technical scheme on one hand:
a CVD device comprises an outer cavity body and an outer cavity cover arranged on the outer cavity body, wherein an inner reaction cavity A, an inner reaction cavity B and an inner reaction cavity C are arranged in the outer cavity body; the outer cavity cover is provided with a worm speed reducer, two servo speed reducing motors, two lifting devices, a lifting frame and a spline shaft, the worm speed reducer is arranged at the center of the outer cavity cover, the output shaft of each servo speed reducing motor is fixedly connected with the worm speed reducer, the two lifting devices are symmetrically arranged on the outer cavity cover and positioned at two ends of the worm speed reducer, the lifting frame is fixedly arranged at the tops of the two lifting devices, the spline shaft is rotatably arranged in the worm speed reducer, one end of the spline shaft is fixedly connected with the lifting frame, the other end of the spline shaft penetrates through the outer cavity cover and extends into the outer cavity body, one end of the spline shaft facing the outer cavity body is fixedly connected with a mounting plate, and one side of the mounting plate facing the bottom of the outer cavity body is fixedly provided with a connecting rod which is connected with the inner reaction cavity A, The first inner cavity cover, the second inner cavity cover and the third inner cavity cover correspond to the inner reaction cavity B and the inner reaction cavity C, the inner cavity cover, the second inner cavity cover and the third inner cavity cover face to one side of the bottom of the outer cavity body, a bracket is fixedly arranged on one side of the bottom of the outer cavity body, and a substrate frame is arranged in the bracket.
In one embodiment, the inner reaction chamber a, the inner reaction chamber B and the inner reaction chamber C have the same structure, and symmetrical gas-homogenizing devices are arranged in the inner reaction chamber a, the inner reaction chamber B and the inner reaction chamber C.
In one embodiment, the bottoms of the inner reaction chamber a, the inner reaction chamber B and the inner reaction chamber C are provided with an air inlet and an air outlet.
In one embodiment, heating devices are disposed in the inner reaction chamber a, the inner reaction chamber B and the inner reaction chamber C.
In one embodiment, a corrugated pipe is arranged on the outer surface of the spline shaft between the worm speed reducer and the lifting frame, and one end of the corrugated pipe and the other end of the worm speed reducer and the lifting frame are connected.
In one embodiment, the worm reducer is fixedly connected to the outer chamber cover via a sealing flange.
In one embodiment, the inner reaction chamber C is fixedly connected to the mounting plate by a slide assembly.
In one embodiment, a gate valve is mounted to one side of the outer chamber.
In order to solve the technical problem, the invention adopts the following technical scheme in another aspect:
a dispersing air inlet method of a CVD device comprises five air inlet modes consisting of a process air source, a diaphragm valve I, a diaphragm valve II, a mass flow meter I, a diaphragm valve III, a diaphragm valve IV, a mass flow meter II, a diaphragm valve V, a mass flow meter III, a diaphragm valve VI, a mass flow meter IV, a vacuum pump, an angle valve I, a heat trap, an angle valve II, a precursor I, a precursor valve I, a precursor II, a precursor valve II, a precursor III and a precursor valve III, wherein,
a first air intake mode; a process gas source is used as a carrier gas and is communicated with the outer cavity body sequentially through a diaphragm valve I, a diaphragm valve II and a mass flowmeter I;
a second air intake mode; a process gas source is used as a carrier gas and is communicated with the outer cavity through a diaphragm valve I and a diaphragm valve III in sequence;
a third air intake mode; a process gas source serving as a carrier gas sequentially passes through the diaphragm valve I, the diaphragm valve IV, the mass flow meter II, the precursor I and the precursor valve I in parallel to enter the inner reaction chamber C;
a fourth air intake mode; a process gas source is used as a carrier gas and is connected with a precursor II and a precursor valve II in parallel in sequence through a diaphragm valve I, a diaphragm valve V and a mass flow meter III and then is connected into an inner reaction cavity B;
a fifth air intake mode; and a process gas source serving as a carrier gas is connected with the precursor III and the precursor valve III in parallel in the inner reaction cavity A sequentially through the diaphragm valve I, the diaphragm valve VI, the mass flow meter IV and the precursor valve III.
Furthermore, the vacuum pump, the angle valve I and the heat trap form a vacuum pumping pipeline, wherein the vacuum pipeline is divided into three paths to be respectively connected into the inner reaction cavity A, the inner reaction cavity B and the inner reaction cavity C, and the outer cavity is communicated with the vacuum pipeline through the angle valve II.
Compared with the prior art, the invention has the following beneficial effects:
the invention can realize independent control of the internal conditions of different reaction chambers by a multi-reaction-chamber structure and a gas inlet method of independently driving the precursors, and a plurality of precursor gas inlet pipelines are not interfered with each other, thereby preventing the precursors with different components from reacting in the pipelines to cause blockage.
2. When the gate valve is in an open state, the substrate frame carrying the substrate to be deposited is transported to the outer cavity by the conveying mechanism, so that the substrate frame is positioned in the bracket, and the lifting device acts and the servo speed reducing motor drives the spline shaft to rotate to realize the lifting and position switching of the inner cavity cover.
3. After the substrate frame is loaded on the brackets below the inner cavity cover, the gate valve is closed, the vacuum pump and the heating devices in the inner reaction cavity start to work, so that the inner reaction cavity reaches the preset temperature and vacuum degree, nitrogen is used as carrier gas to respectively drive each path of precursor to enter each reaction cavity, after the single deposition reaction is finished, the nitrogen is used as cleaning gas to clean each reaction cavity, and the lifting device and the servo speed reduction motor operate successively to drive the inner reaction cavity cover to lift and change positions, so that the substrate frame enters the next inner reaction cavity to perform deposition reaction.
Drawings
FIG. 1 is a schematic overall perspective view of the present invention;
FIG. 2 is a schematic view of the internal structure of the outer chamber of FIG. 1 according to the present invention;
FIG. 3 is a schematic top view of the outer chamber of the present invention;
FIG. 4 is a schematic perspective view of an inner reaction chamber according to the present invention;
FIG. 5 is a schematic cross-sectional view of an inner reaction chamber according to the present invention;
FIG. 6 is a schematic diagram of the air induction method of the present invention.
In the figure: 110. an outer cavity; 111. an outer chamber cover; 112. a lifting device; 113. a lifting frame; 114. a sealing cover; 115. a bellows; 116. a worm speed reducer; 117. a servo deceleration motor; 118. sealing the flange; 119. a spline shaft; 121. an inner cavity cover; 122. a bracket; 123. a substrate holder; 124. a guide block; 125. a guide groove; 126. a fixing plate; 127. mounting a plate; 131. a gate valve; 140. an inner reaction chamber A; 150. an inner reaction chamber B; 160. an inner reaction chamber C; 180. a gas-homogenizing device; 201. a process gas source; 202. a diaphragm valve I; 203. a diaphragm valve II; 204. a mass flow meter I; 205. a diaphragm valve III; 206. a diaphragm valve IV; 207. a mass flow meter II; 208. a diaphragm valve V; 209. a mass flow meter III; 210. a diaphragm valve VI; 211. a mass flow meter IV; 301. a vacuum pump; 302. an angle valve I; 303. a hot trap; 304. an angle valve II; 401. a precursor I; 402. a precursor valve I; 403. a precursor II; 404. a precursor valve II; 405. a precursor III; 406. and a precursor valve III.
Detailed Description
In order to make the technical problems, technical solutions and advantages of the present invention more apparent, the following detailed description is given with reference to the accompanying drawings and specific embodiments. In the following description, characteristic details such as specific configurations and components are provided only to help the embodiments of the present invention be fully understood. Thus, it will be apparent to those skilled in the art that various changes and modifications may be made to the embodiments described herein without departing from the scope and spirit of the invention. In addition, descriptions of well-known functions and constructions are omitted for clarity and conciseness.
It should be appreciated that reference throughout this specification to "one embodiment" or "an embodiment" means that a particular feature, structure or characteristic described in connection with the embodiment is included in at least one embodiment of the present invention. Thus, the appearances of the phrases "in one embodiment" or "in an embodiment" in various places throughout this specification are not necessarily all referring to the same embodiment. Furthermore, the particular features, structures, or characteristics may be combined in any suitable manner in one or more embodiments.
In various embodiments of the present invention, it should be understood that the sequence numbers of the following processes do not mean the execution sequence, and the execution sequence of each process should be determined by its function and inherent logic, and should not constitute any limitation to the implementation process of the embodiments of the present invention.
It should be understood that the term "and/or" herein is merely one type of association relationship that describes an associated object, meaning that three relationships may exist, e.g., a and/or B may mean: a exists alone, A and B exist simultaneously, and B exists alone. In addition, the character "/" herein generally indicates that the former and latter related objects are in an "or" relationship.
In the embodiments provided herein, it should be understood that "B corresponding to a" means that B is associated with a from which B can be determined. It should also be understood that determining B from a does not mean determining B from a alone, but may be determined from a and/or other information.
Example one
As shown in fig. 1 to 5, a CVD apparatus includes an outer chamber 110 and an outer chamber cover 111 disposed on the outer chamber 110, wherein an inner reaction chamber a140, an inner reaction chamber B150 and an inner reaction chamber C160 are disposed inside the outer chamber 110, and further, the inner reaction chamber a140, the inner reaction chamber B150 and the inner reaction chamber C160 are all the same in structure and are uniformly distributed in the outer chamber 110.
Further, symmetrical gas-equalizing devices 180 are arranged in the inner reaction chamber a140, the inner reaction chamber B150 and the inner reaction chamber C160, as shown in fig. 4, dense gas holes are arranged on the gas-equalizing devices, more specifically, the gas-equalizing devices are arc pieces, and the gas-equalizing devices 180 of the two arc pieces are symmetrically arranged in the inner reaction chamber a140, the inner reaction chamber B150 and the inner reaction chamber C160.
Further, the bottoms of the inner reaction chamber a140, the inner reaction chamber B150, and the inner reaction chamber C160 are all provided with an air inlet and an air outlet, specifically as shown in fig. 3, the air inlet and the air outlet are respectively arranged below the air equalizing device 180 of the two arc pieces.
As further shown in fig. 3, the bottom of the outer cavity 110 is further opened with an outer cavity inlet.
Further, heating devices are arranged in the inner reaction chamber a140, the inner reaction chamber B150 and the inner reaction chamber C160.
Further, a worm speed reducer 116, a servo speed reduction motor 117, a lifting device 112, a lifting frame 113 and a spline shaft 119 are arranged on the outer cavity cover 111, wherein the worm speed reducer 116 is arranged at the center of the outer cavity cover 111, and specifically, the worm speed reducer 116 is fixedly connected with the outer cavity cover 111 through a sealing flange 118;
an output shaft of the servo speed reducing motor 117 is fixedly connected with the worm speed reducer 116, specifically, the servo speed reducing motor 117 is arranged on the outer cavity cover 111 and is positioned on one side of the worm speed reducer 116, and the output shaft of the servo speed reducing motor 117 is fixedly connected with the worm speed reducer 116, so that the worm speed reducer 116 is driven to operate through the operation of the servo motor 117;
the number of the lifting devices 112 is two, and the two lifting devices 112 are symmetrically arranged on the outer cavity cover 111 and located at two ends of the worm reducer 116;
the lifting frame 113 is fixedly arranged at the top of the two lifting devices 112, and specifically, the two lifting devices 112 are positioned at two ends of the lifting frame 113; specifically, the lifting frame 113 is also provided with a sealing cover 114.
The spline shaft 119 is rotatably arranged in the worm speed reducer 116, one end of the spline shaft 119 is fixedly connected with the lifting frame 113, and the other end of the spline shaft 119 passes through the outer cavity cover 111 and extends into the outer cavity 110, specifically, a spline structure is arranged on the spline shaft 119, and the spline shaft 119 is rotatably connected with the worm speed reducer 116, so that the spline shaft 119 can be driven to rotate synchronously by the rotation of the worm speed reducer 116; more specifically, the two lifting devices 112 can lift and lower the spline shaft 119 in the worm reducer 116, so that the spline shaft 119 and the worm reducer 116 form a rotational connection and a sliding connection.
Further, a corrugated tube 115 is further disposed between the worm speed reducer 116 and the lifting frame 113, specifically, the corrugated tube 115 is sleeved on the outer surface of the spline shaft 119 between the worm speed reducer 116 and the lifting frame 113, and more specifically, one end of the corrugated tube 115, the other end of the worm speed reducer 116 and the lifting frame 113, so that the spline shaft 119 is sealed in the corrugated tube 115.
Further, the spline shaft 119 is fixedly connected with a mounting plate 127 towards one end of the outer cavity 110, specifically, the mounting plate 127 is a triangular mounting plate, and the center of the triangular mounting plate is fixedly connected with the end of the spline shaft 199, so that the mounting plate 127 can be synchronously driven to synchronously rotate or slide up and down by the rotation or up-and-down sliding of the spline shaft 119.
Further, one side of the mounting plate 127 facing the bottom of the outer cavity 110 is respectively and fixedly provided with a first inner cavity cover 121, a second inner cavity cover and a third inner cavity cover corresponding to the inner reaction cavity a140, the inner reaction cavity B150 and the inner reaction cavity C160, specifically, three corners of the triangular mounting plate are provided with three first inner cavity covers 121, second inner cavity covers and third inner cavity covers corresponding to the inner reaction cavity a140, the inner reaction cavity B150 and the inner reaction cavity C160, respectively, so that the inner reaction cavity a140, the inner reaction cavity B150 and the inner reaction cavity C160 can be covered by the inner cavity covers 121, the second inner cavity covers and the third inner cavity covers, and sealing is achieved.
Further, a bracket 122 is fixedly arranged on one surface of each of the first inner cavity cover 121, the second inner cavity cover and the third inner cavity cover facing the bottom of the outer cavity 110, a substrate frame 123 is arranged in the bracket 122, and specifically, the first inner cavity cover 121, the second inner cavity cover and the third inner cavity cover are fixedly connected with the mounting plate 127 through slider assemblies.
The structure and principle of the slider assembly will be described in detail below by taking the first cavity cover 121 and the mounting plate 127 as an example:
the slider assembly includes a guide block 124, a guide groove 125, and a fixing plate 126, the guide block 124 being disposed in the guide groove 125, the fixing plate 126 being disposed at one side of the guide groove 125 and fixing the guide block 124; so that one side is fixedly connected with the mounting plate 127 through the guide groove 125; one surface of the guide block 124 is fixedly connected with the first inner cavity cover 121, so that the first inner cavity cover 121 is fixedly connected with the mounting plate 127 through the slider assembly; specifically, the guide block 124 is connected with the guide groove 125 in a nested manner, and the guide block 124 and the guide groove 125 form a sliding connection, so that the relative position of the inner cavity cover 121 connected with the guide groove 125 and the guide block 124 can be conveniently adjusted, and thus the unbiased fit between the inner cavity cover 121 and each inner reaction cavity is realized.
Further, the bracket 122 is of an inward concave groove structure, and the bottom edge of the inner side of the bracket 122 is provided with a bump which is matched with the substrate holder 123, so that the substrate holder 123 can be stably lifted by the bracket 122 without position deviation.
In addition, a gate valve 131 is installed at one side of the outer chamber 110.
Example two
As shown in FIG. 5, a decentralized air inlet method for a CVD device comprises five air inlet modes consisting of a process air source 201, a diaphragm valve I202, a diaphragm valve II 203, a mass flow meter I204, a diaphragm valve III 205, a diaphragm valve IV 206, a mass flow meter II 207, a diaphragm valve V208, a mass flow meter III 209, a diaphragm valve VI 210, a mass flow meter IV 211, a vacuum pump 301, an angle valve I302, a heat trap 303, an angle valve II 304, a precursor I401, a precursor valve I402, a precursor II 403, a precursor valve II 404, a precursor III 405 and a precursor valve III 406, wherein,
a first air intake mode; a process gas source 201 is used as a carrier gas and is communicated with the outer cavity 110 sequentially through a diaphragm valve I202, a diaphragm valve II 203 and a mass flow meter I204;
a second air intake mode; a process gas source 201 is used as carrier gas and is communicated with the outer cavity 110 through a diaphragm valve I202 and a diaphragm valve III 205 in sequence;
a third air intake mode; a process gas source 201 serving as a carrier gas sequentially passes through a diaphragm valve I202, a diaphragm valve IV 206, a mass flow meter II 207, a precursor I401 and a precursor valve I402 in parallel and enters an inner reaction cavity C160;
a fourth air intake mode; a process gas source 201 is used as a carrier gas and is connected with a precursor II 403 and a precursor valve II 404 in parallel in an inner reaction chamber B150 through a diaphragm valve I202, a diaphragm valve V208 and a mass flow meter III 209 in sequence;
a fifth air intake mode; and a process gas source 201 serving as a carrier gas is connected with the precursor III 405 and the precursor valve III 406 in parallel in the inner reaction chamber A140 sequentially through a diaphragm valve I202, a diaphragm valve VI 210, a mass flow meter IV 211.
Through the five gas inlet modes, each channel of precursor is driven by the carrier gas to enter the inner reaction cavity without interfering with the bypass precursor, and the condition that the pipeline is blocked due to the reaction of the intersection of various precursors is avoided.
Further, the vacuum pump 301, the angle valve i 302 and the heat trap 303 constitute a vacuum pumping pipeline, wherein the vacuum pipeline is divided into three parts to be respectively connected to the inner reaction cavity a140, the inner reaction cavity B150 and the inner reaction cavity C160, and the outer cavity 110 is communicated with the vacuum pipeline through the angle valve ii 304; therefore, the inner reaction cavity and the outer reaction cavity can reach the set vacuum reaction condition, and the impurity gas which is not fully reacted in each inner reaction cavity is removed.
The working principle is as follows: as shown in fig. 1 and 2, the gate valve 131 is opened, the lifting device 112 extends to a specified position to drive the inner cavity cover to be in a lifted state, the substrate holder 123 is transported to the inside of the outer cavity 110 by using the transport mechanism and just enables the substrate holder to be in the bracket 122 fixed below the inner cavity cover 121, the servo speed-reducing motor 117 drives the spline shaft 119 to rotate and drives the inner cavity cover 121 to switch positions so that the inner cavity cover 121 not bearing the substrate holder 122 moves to a position close to the gate valve 131, the above transport action is repeated so that the substrate holder 123 is borne on the bracket 122, the gate valve 131 is closed, and the lifting device 112 retracts to an initial position so that each inner cavity cover 121 is tightly matched with each inner reaction cavity;
as shown in fig. 6, the vacuum pump 301 starts to operate, the angle valve i 302 and the angle valve ii 304 are opened, the air in the outer chamber 110, the inner reaction chamber a140, the inner reaction chamber B150 and the inner reaction chamber C160 is exhausted through the vacuum pipeline, and the heating devices in the inner reaction chamber a140, the inner reaction chamber B150 and the inner reaction chamber C160 operate synchronously;
as shown in fig. 1, 2 and 6, when the inside of the outer cavity 110 reaches a set vacuum degree, the diaphragm valve i 202 and the diaphragm valve iii 205 are opened, the process gas source 201 enters the outer cavity 110 to break the vacuum degree, then nitrogen is filled into the outer cavity 110 through the diaphragm valve ii 203 and the mass flow meter i 204, when the inside of the inner reaction chamber a140, the inner reaction chamber B150 and the inner reaction chamber C160 reaches a set temperature and vacuum degree, the process gas source 201 serves as a carrier gas to respectively drive the precursor i 401, the precursor ii 402 and the precursor iii 403 to enter the inner reaction chamber a140, the inner reaction chamber B150 and the inner reaction chamber C160, the precursor is uniformly sprayed on the substrate holder 123 through the gas uniformizing device 180 to complete a deposition reaction with a substrate to be deposited, after a single deposition reaction is completed, the lifting device 112 acts to lift the inner cavity cover 121, the servo deceleration motor 117 drives the spline shaft 119 to rotate to make each inner cavity cover 121 switch positions, the lift device 112 is then retracted to switch the position of the substrate holder 123 between the inner reaction chamber a140, the inner reaction chamber B150, and the inner reaction chamber C160, and the cycle of the precursor entering the inner reaction chamber and the mechanical action is repeated several times to complete the entire deposition reaction.
Finally, it should be noted that: the above examples are only intended to illustrate the technical solution of the present invention, but not to limit it; although the technical solutions of the present invention have been described in detail with reference to the foregoing embodiments, it should be understood by those skilled in the art that the technical solutions described in the foregoing embodiments can be modified or some technical features can be replaced equally; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the spirit and scope of the technical solutions of the embodiments of the present invention.
Claims (10)
1. A CVD apparatus, characterized in that: the reaction device comprises an outer cavity (110) and an outer cavity cover (111) arranged on the outer cavity (110), wherein an inner reaction cavity A (140), an inner reaction cavity B (150) and an inner reaction cavity C (160) are arranged in the outer cavity (110); be provided with worm speed reducer (116), servo gear motor (117), elevating gear (112), crane (113) and integral key shaft (119) on outer chamber lid (111), worm speed reducer (116) set up the center department of outer chamber lid (111), the output shaft of servo gear motor (117) with worm speed reducer (116) fixed connection, elevating gear (112) are two, two elevating gear (112) symmetry sets up on outer chamber lid (111) and lie in the both ends of worm speed reducer (116), crane (113) are fixed to be set up at the top of two elevating gear (112), integral key shaft (119) rotate to be set up in worm speed reducer (116), just integral key shaft (119) one end with crane (113) fixed connection, the other end pass outer chamber lid (111) and toward extend in outer cavity (110), wherein, integral key shaft (119) are towards one end fixedly connected with mounting panel (127) of outer cavity (110), mounting panel (127) orientation the one side of outer cavity (110) bottom respectively fixed be provided with corresponding first inner chamber lid (121), second inner chamber lid, third inner chamber lid of interior reaction chamber A (140), interior reaction chamber B (150) and interior reaction chamber C (160), inner chamber lid (121), second inner chamber lid, third inner chamber lid orientation the one side of outer cavity (110) bottom all is fixed and is provided with bracket (122), just be provided with substrate frame (123) in bracket (122).
2. A CVD apparatus according to claim 1, wherein: the structure of the inner reaction cavity A (140), the structure of the inner reaction cavity B (150) and the structure of the inner reaction cavity C (160) are the same, and symmetrical gas-homogenizing devices (180) are arranged in the inner reaction cavity A (140), the inner reaction cavity B (150) and the inner reaction cavity C (160).
3. A CVD apparatus according to claim 2, wherein: the bottoms of the inner reaction cavity A (140), the inner reaction cavity B (150) and the inner reaction cavity C (160) are provided with air inlets and air outlets.
4. A CVD apparatus according to claim 3, characterized in that: heating devices are arranged in the inner reaction cavity A (140), the inner reaction cavity B (150) and the inner reaction cavity C (160).
5. A CVD apparatus according to claim 1, wherein: the outer surface of a spline shaft (119) between the worm speed reducer (116) and the lifting frame (113) is provided with a corrugated pipe (115), and one end of the corrugated pipe (115) and the other end of the worm speed reducer (116) and the lifting frame (113) are connected.
6. A CVD apparatus according to claim 5, wherein: the worm speed reducer (116) is fixedly connected with the outer cavity cover (111) through a sealing flange (118).
7. A CVD apparatus according to claim 1, wherein: the first inner cavity cover (121), the second inner cavity cover and the third inner cavity cover are fixedly connected with the mounting plate (127) through sliding block assemblies.
8. A CVD apparatus according to claim 1, wherein: and a gate valve (131) is arranged on one side of the outer cavity (110).
9. A CVD apparatus dispersion gas inlet method according to any one of claims 1 to 8, characterized in that: comprises five air inlet modes consisting of a process air source (201), a diaphragm valve I (202), a diaphragm valve II (203), a mass flow meter I (204), a diaphragm valve III (205), a diaphragm valve IV (206), a mass flow meter II (207), a diaphragm valve V (208), a mass flow meter III (209), a diaphragm valve VI (210), a mass flow meter IV (211), a vacuum pump (301), an angle valve I (302), a heat trap (303), an angle valve II (304), a precursor I (401), a precursor valve I (402), a precursor II (403), a precursor valve II (404), a precursor III (405) and a precursor valve III (406), wherein,
a first air intake mode; a process gas source (201) is used as carrier gas and is communicated with the outer cavity (110) through a diaphragm valve I (202), a diaphragm valve II (203) and a mass flow meter I (204) in sequence;
a second air intake mode; a process gas source (201) is used as carrier gas and is communicated with the outer cavity (110) through a diaphragm valve I (202) and a diaphragm valve III (205) in sequence;
a third air intake mode; a process gas source (201) is used as a carrier gas and sequentially passes through a diaphragm valve I (202), a diaphragm valve IV (206), a mass flow meter II (207), a precursor I (401) and a precursor valve I (402) to enter an inner reaction chamber C (160) in parallel;
a fourth air intake mode; a process gas source (201) is used as a carrier gas and is connected with an inner reaction chamber B (150) in parallel through a diaphragm valve I (202), a diaphragm valve V (208), a mass flow meter III (209), a precursor II (403) and a precursor valve II (404) in sequence;
a fifth air intake mode; and a process gas source (201) is used as a carrier gas and is connected with the inner reaction chamber A (140) in parallel through a diaphragm valve I (202), a diaphragm valve VI (210), a mass flow meter IV (211), a precursor III (405) and a precursor valve III (406) in sequence.
10. A CVD apparatus dispersion gas inlet method according to claim 9, wherein: the vacuum pump (301), the angle valve I (302) and the hot trap (303) form a vacuum pumping pipeline, wherein the vacuum pipeline is divided into three parts to be respectively connected into the inner reaction cavity A (140), the inner reaction cavity B (150) and the inner reaction cavity C (160), and the outer cavity (110) is communicated with the vacuum pipeline through the angle valve II (304).
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Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060156979A1 (en) * | 2004-11-22 | 2006-07-20 | Applied Materials, Inc. | Substrate processing apparatus using a batch processing chamber |
| CN102212877A (en) * | 2010-07-09 | 2011-10-12 | 江苏中晟半导体设备有限公司 | MOCVD (Metal-organic Chemical Vapor Deposition) system with multiple extensional reaction cavities and operation method thereof |
| CN103031540A (en) * | 2011-09-30 | 2013-04-10 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Reaction cavity device and substrate processing equipment with same |
| CN104233226A (en) * | 2013-06-09 | 2014-12-24 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Atomic layer deposition equipment |
| WO2015096820A1 (en) * | 2013-12-29 | 2015-07-02 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Process chamber and semiconductor processing apparatus |
| CN110438473A (en) * | 2019-09-06 | 2019-11-12 | 左然 | A kind of chemical vapor deposition unit and method |
| CN110724937A (en) * | 2018-07-16 | 2020-01-24 | 江苏迈纳德微纳技术有限公司 | Atomic layer deposition system for high purity thin film deposition |
| CN210506514U (en) * | 2019-05-24 | 2020-05-12 | 合肥本源量子计算科技有限责任公司 | Cold wall chemical vapor deposition device |
| CN112481604A (en) * | 2020-12-03 | 2021-03-12 | 无锡市邑晶半导体科技有限公司 | ALD processing equipment and processing method |
-
2021
- 2021-10-11 CN CN202111180421.3A patent/CN113881931A/en active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060156979A1 (en) * | 2004-11-22 | 2006-07-20 | Applied Materials, Inc. | Substrate processing apparatus using a batch processing chamber |
| CN102212877A (en) * | 2010-07-09 | 2011-10-12 | 江苏中晟半导体设备有限公司 | MOCVD (Metal-organic Chemical Vapor Deposition) system with multiple extensional reaction cavities and operation method thereof |
| CN103031540A (en) * | 2011-09-30 | 2013-04-10 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Reaction cavity device and substrate processing equipment with same |
| CN104233226A (en) * | 2013-06-09 | 2014-12-24 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Atomic layer deposition equipment |
| WO2015096820A1 (en) * | 2013-12-29 | 2015-07-02 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Process chamber and semiconductor processing apparatus |
| CN110724937A (en) * | 2018-07-16 | 2020-01-24 | 江苏迈纳德微纳技术有限公司 | Atomic layer deposition system for high purity thin film deposition |
| CN210506514U (en) * | 2019-05-24 | 2020-05-12 | 合肥本源量子计算科技有限责任公司 | Cold wall chemical vapor deposition device |
| CN110438473A (en) * | 2019-09-06 | 2019-11-12 | 左然 | A kind of chemical vapor deposition unit and method |
| CN112481604A (en) * | 2020-12-03 | 2021-03-12 | 无锡市邑晶半导体科技有限公司 | ALD processing equipment and processing method |
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