CN214991834U - Plasma enhanced atomic layer deposition equipment - Google Patents
Plasma enhanced atomic layer deposition equipment Download PDFInfo
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- CN214991834U CN214991834U CN202121336165.8U CN202121336165U CN214991834U CN 214991834 U CN214991834 U CN 214991834U CN 202121336165 U CN202121336165 U CN 202121336165U CN 214991834 U CN214991834 U CN 214991834U
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Abstract
The utility model relates to an atomic layer deposition technical field just discloses an atomic layer deposition equipment of plasma reinforcing, transport module, heating module, molecular vacuum pump, vacuum pump and exhaust-gas treatment system including vacuum reaction chamber, reaction gas, inert gas bottle, predecessor, the fixed intercommunication in upper end in vacuum reaction chamber has plasma to take place the chamber, the fixed plasma that is provided with in upper end in plasma emergence chamber takes place the chamber air inlet, plasma emergence chamber is provided with the valve with the junction in vacuum reaction chamber, the upper end symmetry intercommunication in vacuum reaction chamber has two vacuum reaction chamber intake pipes, the fixed intercommunication of one end that vacuum reaction chamber intake pipe is located the vacuum reaction intracavity has matrix air inlet nozzle. The utility model discloses can improve atomic layer deposition equipment's work efficiency, the deposition uniformity, efficiency and the accurate control that predecessor transported are convenient for wash, can improve the efficiency of maintaining.
Description
Technical Field
The utility model relates to an atomic layer deposition technical field especially relates to an atomic layer deposition equipment of plasma reinforcing.
Background
Due to its excellent self-localization, uniformity, and rate controllability, Atomic Layer Deposition (ALD) technology has a wide application prospect in the semiconductor industry, such as transistor gate dielectric layer (high-k material), optoelectronic device coating, diffusion barrier layer and interconnection barrier layer in transistors, interconnection layer in integrated circuits, metal-insulator-metal (MIM) capacitor coating in integrated circuits, etc.
The technique of ALD (peald) by plasma enhancement is an important development on the basis of thermal ALD. In PEALD, plasma is the more dominant energy source than is needed to provide the chemical reactions by heating, and thus high quality thin film growth at lower temperatures can be achieved. PEALD equipment generally includes a vacuum reaction chamber system, a plasma generation system, an inert carrier gas system, a precursor delivery system, a heating system, an exhaust gas treatment system, and an electronic control system.
The vacuum reaction cavity system of the existing small-sized PEALD equipment is generally cylindrical, adopts a cover-lifting type sample injection mode and adopts a single-port air inlet mode. When the reaction substrate is replaced, the cover-lifting type sample injection mode can make the whole system lose vacuum and introduce unnecessary impurities. Meanwhile, the flat top design is not favorable for the uniform diffusion of the precursor and the plasma. The single port mode gas inlet system is also not conducive to uniformity of precursor adsorption on large area substrates. The precursor delivery system often uses a complete heating module and shares gas delivery pipelines, which may cause contamination between precursors and side reactions before entering the reaction chamber.
SUMMERY OF THE UTILITY MODEL
The utility model aims at solving the problem that the vacuum reaction cavity system of the small PEALD device in the prior art is generally cylindrical, adopts a cover-lifting type sample injection mode, and adopts a single-port air inlet mode. When the reaction substrate is replaced, the cover-lifting type sample injection mode can make the whole system lose vacuum and introduce unnecessary impurities. Meanwhile, the flat top design is not favorable for the uniform diffusion of the precursor and the plasma. The single port mode gas inlet system is also not conducive to uniformity of precursor adsorption on large area substrates. The precursor conveying system usually adopts a complete heating module and shares a gas conveying pipeline, which can cause the problems of pollution among precursors and side reaction before entering a reaction cavity, and provides the plasma enhanced atomic layer deposition equipment.
In order to achieve the above purpose, the utility model adopts the following technical scheme:
the utility model provides an atomic layer deposition equipment of plasma reinforcing, includes vacuum reaction chamber, reaction gas, inert gas bottle, predecessor transport module, heating module, molecular vacuum pump, vacuum pump and exhaust-gas treatment system, the fixed intercommunication in upper end in vacuum reaction chamber has plasma to take place the chamber, the fixed plasma that is provided with in upper end in plasma generation chamber takes place the chamber air inlet, plasma generation chamber is provided with the valve with the junction in vacuum reaction chamber, the upper end symmetry intercommunication in vacuum reaction chamber has two vacuum reaction chamber intake pipes, the fixed intercommunication of one end that vacuum reaction chamber intake pipe is located vacuum reaction chamber has matrix air inlet nozzle, the bottom inboard in vacuum reaction chamber is fixed through elevating system and is installed control by temperature change heating sample platform, the lateral wall in vacuum reaction chamber still is fixed to be inserted and is equipped with the vacuum gauge, the fixed vacuum reaction chamber gas outlet that is provided with in lower extreme one side in vacuum reaction chamber, the side wall of the vacuum reaction cavity is fixedly communicated with a sample injection cavity, a sample injection guide rail for dividing the sample injection cavity into an upper part and a lower part is arranged at the middle position in the sample injection cavity, and a sample injection cavity air inlet and a sample injection cavity air outlet are adjacently arranged at the lower side of one end of the sample injection cavity;
reaction gas and inert gas bottle transport the pipeline through reaction gas respectively and take place the chamber air inlet with the plasma in vacuum reaction chamber and be connected, inert carrier gas transports the pipeline still with advance kind chamber air inlet intercommunication, be provided with independent gas on the predecessor bottle and transport the pipeline, inert carrier gas transports the pipeline and transports the pipeline with independent gas and be connected, independent gas transports pipeline and vacuum reaction chamber intake-tube connection, the molecular vacuum pump passes through the choke valve and is connected with vacuum reaction chamber gas outlet, vacuum pump, molecular vacuum pump and vacuum reaction chamber gas outlet all are connected with advance kind chamber gas outlet, vacuum pump and exhaust-gas treatment system are connected.
Preferably, an automatic opening cabin door is arranged at the joint of the sample feeding cavity and the vacuum reaction cavity.
Preferably, the reaction gas transportation passage and the inert carrier gas transportation pipeline are both provided with a gas flow meter and a gas control valve.
Preferably, the middle part of the vacuum reaction chamber is provided with a heating layer, and the outer side of the vacuum reaction chamber is provided with a heat preservation layer.
Preferably, an openable upper cover is arranged on the upper side of one end, far away from the vacuum reaction cavity, of the sample injection cavity.
Preferably, the lifting mechanism comprises a threaded cylinder which is rotatably sleeved at the bottom of the vacuum reaction chamber through a sealing bearing, a lifting screw is sleeved on the inner wall of the upper end of the threaded cylinder in a threaded manner, the lifting screw is fixed at the lower end of the temperature-control heating sample table, a driven bevel gear is fixedly connected to the lower end of the threaded cylinder, a driving motor is fixedly arranged at the lower end of the vacuum reaction chamber, an output shaft of the driving motor is fixedly connected with a driving bevel gear meshed with the driven bevel gear, and a plurality of limiting telescopic rods are symmetrically and fixedly connected between the lower end of the temperature-control heating sample table and the inner wall of the bottom of the vacuum reaction chamber.
Preferably, the upper end of the vacuum reaction chamber is arranged in a clam shell structure.
Compared with the prior art, the utility model provides a plasma-enhanced atomic layer deposition equipment possesses following beneficial effect:
1. the plasma enhanced atomic layer deposition equipment has the advantages that the independent sample injection cavity is arranged on the vacuum reaction cavity, so that the vacuum system in the reaction cavity can be prevented from being damaged when a reaction substrate is replaced, the vacuum time is saved again, based on the formation and diffusion rule of plasma, the clamshell-shaped reaction cavity dome is designed, the inductive coupling plasma generation cavity is arranged at the top of the clamshell-shaped reaction cavity dome, the clamshell-shaped reaction cavity top design is also beneficial to the uniform diffusion of the plasma and the precursor, meanwhile, the design of the matrix type air inlet nozzle can furthest improve the adsorption uniformity of the precursor on a large-area substrate, the independent air pipeline and the heating module can accurately convey the precursor according to different precursor properties, the pollution hidden danger of the precursor is solved, and the working efficiency of the atomic layer deposition equipment can be improved, deposition uniformity, efficiency and precision control of precursor delivery.
2. The plasma-enhanced atomic layer deposition equipment can ensure perfect contact between the temperature-controlled heating sample stage and the reaction substrate through the liftable temperature-controlled heating sample stage, and ensure the temperature uniformity of the reaction substrate.
3. The plasma-enhanced atomic layer deposition equipment is detachably connected through a modular structure, is convenient to clean, can improve the maintenance efficiency, reduces the introduction and maintenance cost of impurities in the coating process, and can complete the heating atomic layer deposition work only by closing the valve at the joint of the plasma generation cavity and the vacuum reaction cavity.
And the part that does not relate to among the device all is the same with prior art or can adopt prior art to realize, the utility model discloses can improve atomic layer deposition equipment's work efficiency, deposition uniformity, efficiency and the accurate control that predecessor transported, the washing of being convenient for can improve the efficiency of maintaining.
Drawings
Fig. 1 is a schematic structural diagram of a plasma enhanced atomic layer deposition apparatus according to the present invention;
fig. 2 is a schematic structural diagram of a vacuum reaction chamber of a plasma enhanced atomic layer deposition apparatus according to the present invention.
In the figure: 1 vacuum reaction chamber, 2 reaction gases, 3 inert gas bottles, 4 precursor conveying modules, 5 heating modules, 6 molecular vacuum pumps, 7 vacuum pumps, 8 waste gas treatment systems, 9 plasma generation chambers, 10 plasma generation chamber air inlets, 11 vacuum reaction chamber air inlet pipes, 12 matrix type air inlet nozzles, 13 temperature control heating sample stages, 14 vacuum meters, 15 vacuum reaction chamber air outlets, 16 sample injection chambers, 17 sample injection guide rails, 18 sample injection chamber air inlets, 19 sample injection chamber air outlets, 20 reaction gas conveying passages, 21 inert carrier gas conveying pipelines, 22 independent gas conveying pipelines, 23 throttle valves, 24 automatic opening cabin doors, 25 heating layers, 26 heat preservation layers, 27 openable upper covers, 28 threaded cylinders, 29 lifting screw rods, 30 driven bevel gears, 31 driving motors, 32 driving bevel gears and 33 limiting telescopic rods.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments.
In the description of the present invention, it is to be understood that the terms "upper", "lower", "front", "rear", "left", "right", "top", "bottom", "inner", "outer", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore, should not be construed as limiting the present invention.
Referring to fig. 1-2, a plasma enhanced atomic layer deposition device comprises a vacuum reaction chamber 1, a reaction gas 2, an inert gas bottle 3, a precursor transport module 4, a heating module 5, a molecular vacuum pump 6, a vacuum pump 7 and a waste gas treatment system 8, wherein the upper end of the vacuum reaction chamber 1 is fixedly communicated with a plasma generation chamber 9, the upper end of the plasma generation chamber 9 is fixedly provided with a plasma generation chamber air inlet 10, a valve is arranged at the joint of the plasma generation chamber 9 and the vacuum reaction chamber 1, the upper end of the vacuum reaction chamber 1 is symmetrically communicated with two vacuum reaction chamber air inlet pipes 11, one end of each vacuum reaction chamber air inlet pipe 11 positioned in the vacuum reaction chamber 1 is fixedly communicated with a matrix type air inlet nozzle 12, the inner side of the bottom of the vacuum reaction chamber 1 is fixedly provided with a temperature control heating sample table 13 through a lifting mechanism, and the side wall of the vacuum reaction chamber 1 is also fixedly inserted with a vacuum gauge 14, a vacuum reaction cavity air outlet 15 is fixedly arranged on one side of the lower end of the vacuum reaction cavity 1, a sample injection cavity 16 is fixedly communicated with the side wall of the vacuum reaction cavity 1, a sample injection guide rail 17 which divides the sample injection cavity 16 into an upper part and a lower part is arranged at the middle position in the sample injection cavity 16, and a sample injection cavity air inlet 18 and a sample injection cavity air outlet 19 are adjacently arranged on the lower side of one end of the sample injection cavity 16;
the reaction gas 2 and the inert gas bottle 3 are respectively connected with a plasma generation cavity air inlet 10 of the vacuum reaction cavity 1 through a reaction gas transport passage 20 and an inert carrier gas transport pipeline 21, the inert carrier gas transport pipeline 21 is also communicated with a sample injection cavity air inlet 18, an independent gas transport pipeline 22 is arranged on the precursor transport module 4, the inert carrier gas transport pipeline 21 is connected with the independent gas transport pipeline 22, the independent gas transport pipeline 22 is connected with a vacuum reaction cavity air inlet pipe 11, the molecular vacuum pump 6 is connected with a vacuum reaction cavity air outlet 15 through a throttle valve 23, the vacuum pump 7, the molecular vacuum pump 6 and the vacuum reaction cavity air outlet 15 are all connected with a sample injection cavity air outlet 19, and the vacuum pump 6 is connected with a waste gas treatment system 8.
An automatic opening door 24 is arranged at the joint of the sample introduction cavity 16 and the vacuum reaction cavity 1.
The reaction gas transport passage 20 and the inert carrier gas transport pipe 21 are provided with a gas flow meter and a gas control valve.
The middle part of the vacuum reaction chamber 1 is provided with a heating layer 25, and the outer side of the vacuum reaction chamber 1 is provided with a heat preservation layer 26.
An openable upper cover 27 is arranged on the upper side of one end of the sample injection cavity 16 far away from the vacuum reaction cavity 1.
The lifting mechanism comprises a threaded cylinder 28 which is rotatably sleeved at the bottom of the vacuum reaction chamber 1 through a sealing bearing, a lifting screw 29 is sleeved on the inner wall of the upper end of the threaded cylinder 28 in a threaded manner, the lifting screw 29 is fixed at the lower end of the temperature control heating sample table 13, a driven bevel gear 30 is fixedly connected to the lower end of the threaded cylinder 28, a driving motor 31 is fixedly arranged at the lower end of the vacuum reaction chamber 1, a driving bevel gear 32 meshed with the driven bevel gear 30 is fixedly connected to an output shaft of the driving motor 31, and a plurality of limit telescopic rods 33 are symmetrically and fixedly connected between the lower end of the temperature control heating sample table 13 and the inner wall of the bottom of the vacuum reaction chamber 1.
The upper end of the vacuum reaction chamber 1 is arranged to be a clam shell structure.
In the utility model, when in use, the reaction gas transportation channel 20 and the inert carrier gas transportation pipeline 21 are connected with the plasma generation cavity air inlet 10 of the vacuum reaction cavity 1 after passing through the gas flowmeter and the gas control valve body; the inert carrier gas conveying pipeline 21 is connected with the gas inlet 18 of the sample feeding cavity through a gas flowmeter and a gas control valve body to provide gas of the sample feeding cavity; the inert carrier gas conveying pipeline 21 is connected with an independent gas conveying pipeline 22 through a gas flowmeter and a gas control valve body to provide a carrier gas system of a precursor; the heating module 5 respectively heats different precursor bottles and conveying pipelines to provide necessary vapor pressure; the transported independent gas transport pipeline 22 is connected with the vacuum reaction cavity air inlet pipe 11, and then precursors are uniformly distributed in the vacuum reaction cavity 1 through the matrix type air inlet nozzle 12; the molecular vacuum pump 6 is connected with the air outlet 15 of the vacuum reaction cavity through a throttle valve 23 to ensure the proper pressure environment of the vacuum cavity; the vacuum pump 7 is connected with the molecular vacuum pump 6, the vacuum reaction cavity air outlet 15 and the sample injection cavity air outlet 19 to provide a vacuum system; the vacuum pump 7 is connected with the exhaust gas treatment system 8 to complete the treatment of the unreacted precursor and the coating by-products.
The above, only be the concrete implementation of the preferred embodiment of the present invention, but the protection scope of the present invention is not limited thereto, and any person skilled in the art is in the technical scope of the present invention, according to the technical solution of the present invention and the utility model, the concept of which is equivalent to replace or change, should be covered within the protection scope of the present invention.
Claims (7)
1. The utility model provides a plasma-enhanced atomic layer deposition equipment, includes vacuum reaction chamber (1), reaction gas (2), inert gas bottle (3), precursor transport module (4), heating module (5), molecular vacuum pump (6), vacuum pump (7) and exhaust-gas treatment system (8), its characterized in that, the fixed intercommunication in upper end of vacuum reaction chamber (1) has plasma to take place chamber (9), the fixed plasma that is provided with in upper end of plasma emergence chamber (9) takes place chamber air inlet (10), the plasma takes place the junction of chamber (9) and vacuum reaction chamber (1) and is provided with the valve, the upper end symmetry intercommunication of vacuum reaction chamber (1) has a plurality of vacuum reaction chamber intake pipe (11), the fixed intercommunication of one end that vacuum reaction chamber intake pipe (11) is located vacuum reaction chamber (1) has matrix type air inlet nozzle (12), a temperature control heating sample table (13) is fixedly arranged on the inner side of the bottom of the vacuum reaction cavity (1) through a lifting mechanism, a vacuum gauge (14) is fixedly inserted into the side wall of the vacuum reaction cavity (1), a vacuum reaction cavity gas outlet (15) is fixedly arranged on one side of the lower end of the vacuum reaction cavity (1), the side wall of the vacuum reaction cavity (1) is fixedly communicated with a sample injection cavity (16), a sample injection guide rail (17) which divides the sample injection cavity (16) into an upper part and a lower part is arranged in the middle of the inner part of the sample injection cavity (16), and a sample injection cavity gas inlet (18) and a sample injection cavity gas outlet (19) are adjacently arranged on the lower side of one end of the sample injection cavity (16);
the reaction gas (2) and the inert gas bottle (3) are respectively connected with a plasma generation cavity gas inlet (10) of the vacuum reaction cavity (1) through a reaction gas conveying passage (20) and an inert carrier gas conveying pipeline (21), the inert carrier gas conveying pipeline (21) is also communicated with a sample injection cavity gas inlet (18), an independent gas conveying pipeline (22) is arranged on the precursor conveying module (4), the inert carrier gas conveying pipeline (21) is connected with the independent gas conveying pipeline (22), and precursor conveying pipelines are formed by connecting different precursor bottles; independent heating modules are arranged on the precursor bottle and the gas conveying pipeline; the heating module is also arranged on the pipeline before entering the vacuum reaction cavity, the independent gas transport pipeline (22) is connected with the vacuum reaction cavity air inlet pipe (11), the molecular vacuum pump (6) is connected with the vacuum reaction cavity air outlet (15) through the throttle valve (23), the vacuum pump (7), the molecular vacuum pump (6) and the vacuum reaction cavity air outlet (15) are all connected with the sample injection cavity air outlet (19), and the vacuum pump (7) is connected with the waste gas treatment system (8).
2. A plasma enhanced atomic layer deposition apparatus according to claim 1, wherein the connection between the sample introduction chamber (16) and the vacuum reaction chamber (1) is provided with an automatic opening door (24).
3. A plasma enhanced atomic layer deposition apparatus according to claim 1, wherein a gas flow meter and a gas control valve are provided on each of the reaction gas transport passage (20) and the inert carrier gas transport line (21).
4. A plasma enhanced atomic layer deposition apparatus according to claim 1, characterized in that the middle part of the vacuum reaction chamber (1) is provided with a heating layer (25), and the outside of the vacuum reaction chamber (1) is provided with an insulating layer (26).
5. A plasma enhanced atomic layer deposition device according to claim 1, characterized in that the upper side of the sample introduction chamber (16) remote from the vacuum reaction chamber (1) is provided with an openable upper cover (27).
6. A plasma enhanced atomic layer deposition apparatus according to claim 1, the lifting mechanism comprises a threaded cylinder (28) which is rotatably sleeved at the bottom of the vacuum reaction cavity (1) through a sealing bearing, the inner wall of the upper end of the threaded cylinder (28) is in threaded sleeve connection with a lifting screw (29), the lifting screw (29) is fixed at the lower end of the temperature control heating sample table (13), the lower end of the threaded cylinder (28) is fixedly connected with a driven bevel gear (30), the lower end of the vacuum reaction cavity (1) is fixedly provided with a driving motor (31), an output shaft of the driving motor (31) is fixedly connected with a driving bevel gear (32) meshed with the driven bevel gear (30), a plurality of limiting telescopic rods (33) are symmetrically and fixedly connected between the lower end of the temperature control heating sample table (13) and the inner wall of the bottom of the vacuum reaction cavity (1).
7. A plasma enhanced atomic layer deposition apparatus according to claim 1, wherein the upper end of the vacuum reaction chamber (1) is provided as a clam shell structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202121336165.8U CN214991834U (en) | 2021-06-16 | 2021-06-16 | Plasma enhanced atomic layer deposition equipment |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202121336165.8U CN214991834U (en) | 2021-06-16 | 2021-06-16 | Plasma enhanced atomic layer deposition equipment |
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| CN214991834U true CN214991834U (en) | 2021-12-03 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114226360A (en) * | 2021-12-15 | 2022-03-25 | 中国科学院大连化学物理研究所 | Pretreatment device for electron microscope sample and sample rod |
| CN114446757A (en) * | 2021-12-16 | 2022-05-06 | 武汉新芯集成电路制造有限公司 | Plasma processing apparatus and wafer surface activation method |
-
2021
- 2021-06-16 CN CN202121336165.8U patent/CN214991834U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114226360A (en) * | 2021-12-15 | 2022-03-25 | 中国科学院大连化学物理研究所 | Pretreatment device for electron microscope sample and sample rod |
| CN114446757A (en) * | 2021-12-16 | 2022-05-06 | 武汉新芯集成电路制造有限公司 | Plasma processing apparatus and wafer surface activation method |
| CN114446757B (en) * | 2021-12-16 | 2024-01-05 | 武汉新芯集成电路制造有限公司 | Plasma processing apparatus and wafer surface activation method |
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Effective date of registration: 20220126 Address after: 210000 floor 7, administration building, Xuzhuang Software industry base, No. 699-1, Xuanwu Avenue, Xuanwu District, Nanjing, Jiangsu Province Patentee after: Nanjing gangneng Environmental Technology Co.,Ltd. Address before: 210000 floor 2, building 13, Zhongke innovation Plaza, No. 150, pubin Road, Jiangbei new area, Nanjing, Jiangsu Patentee before: Nanjing gangrui Electronic Technology Co.,Ltd. |