CN109321897A - A kind of atomic layer deposition system and method - Google Patents
A kind of atomic layer deposition system and method Download PDFInfo
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- CN109321897A CN109321897A CN201710638808.6A CN201710638808A CN109321897A CN 109321897 A CN109321897 A CN 109321897A CN 201710638808 A CN201710638808 A CN 201710638808A CN 109321897 A CN109321897 A CN 109321897A
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- inert gas
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- delivery tube
- tube road
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
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Abstract
The present invention provides a kind of atomic layer deposition systems, with reaction chamber, the presoma transfer conduit being connected with reaction chamber, the first inert gas delivery tube road is connect with reaction chamber, for transmitting inert gas to reaction chamber, to maintain reaction chamber pressure steady；Second inert gas delivery tube road is connect with reaction chamber, for conveying inert gas to reaction chamber, to being purged in reaction chamber, and the vacuum line and vacuum pump being connect with reaction chamber, for gas extra in extraction chamber, process is cleaned so as to avoid complicated gas, reduces the waste of presoma reaction source；Simultaneously, it is ensured that the pressure of reaction chamber and the stabilization of airflow field, impurity caused by avoiding gas circuit from disturbing, to obtain the film that compactness is good, impurity content is low.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, and in particular to a kind of atomic layer deposition system and method.
Background technique
With the development of IC industry, the characteristic size (device critical dimension) of component is gradually
It reduces, depth-to-width ratio (aspect ratio) gradually increases, lining of this technology development for depositing operation, especially high-aspect-ratio
Conformability is deposited on bottom, and good film layer proposes severe challenge.Atomic layer deposition (Atomic layer deposition,
It ALD) is exactly the new membrane deposition method of one kind that proposes in order to cope with this challenge.Atomic layer deposition be by that will react before
It drives body and is independently passed into reactor, reaction is realized by the catalysis of substrate surface.The first precursor species in a pulsed fashion into
It is adsorbed on substrate surface after entering reactor, then extra precursor species purge out from reactor, complete first half instead
Answer (half reactions)；Reactor is entered followed by second of precursor species pulse and and is adsorbed on substrate surface
The reaction of the first precursor species, and molecular layer is formed on the substrate, extra substance is purged out from reactor by purging,
Second half-reaction is completed in this way.It is repeated by two the continuous of half-reaction until obtaining desired thickness value, therefore, reaction
The pressure of chamber frequently changes, and carrys out adverse effect to ALD reaction zone.
The variable of ALD technique includes a variety of presomas and the chemical reaction path (chemical that may be used
pathways).Wherein, oxide path uses metal alkyl presoma and oxidant, and this chemical reaction method is extensive
For deposited oxide layer.Other state-variables are included in reaction chamber between reactant pulses and are evacuated to high vacuum, or work as
Using inert gas continuing purge reaction chamber when reactant passes through reaction compartment.
ALD reaction is relatively difficult to control.Ideal ALD reaction is chamber of the presoma in substrate surface rather than on substrate
Interior space reaction.Therefore, before second of presoma impulses injection to chamber, the first presoma must be gone from chamber completely
It removes.Be trapped in transfer conduit and chamber especially cavity space trace presoma react after chemical combination is formed on chamber
Object can bring about pollution to substrate surface and introduce impurity.Excellent adsorption between some presomas and cell materials, by they from
Chamber emptying is relatively difficult and time-consuming.Also, when purging, presoma does not enter reaction chamber, but is directly taken away by vacuum pump,
Presoma, especially organic metal forerunner source are wasted, usual price is more expensive.In addition, presoma or purge gas material
In moisture and oxygen impurities it is especially unwelcome in the ald process, can all seriously affect process results, and bring to technology controlling and process
More challenges.
Therefore, it is necessary to optimize ALD technique and chamber purge system to cope with these challenges.
Summary of the invention
In order to overcome the above problems, the present invention is intended to provide a kind of atomic layer deposition system and method, thus simplify technique,
Improve the compactness and purity of the film of atomic layer deposition.
In order to achieve the above object, the present invention provides a kind of atomic layer deposition system, the depositing system includes
One reaction chamber；
Presoma transfer conduit, connect with reaction chamber, for transmitting presoma to reaction chamber；
First inert gas delivery tube road, is connected with reaction chamber, for transmitting inert gas to reaction chamber, with dimension
It is steady to hold reaction chamber pressure；
Second inert gas delivery tube road, connect with reaction chamber, for conveying inert gas to reaction chamber, to reaction
It is purged in chamber；
And vacuum line and vacuum pump, it is connect with reaction chamber, for gas extra in extraction chamber.
In one embodiment, second inert gas delivery tube road is also connect with vacuum line.
In one embodiment, second inert gas delivery tube road have a main road and from
Two separated branches of main road, the first branch are connected to reaction chamber, second branch connection
Onto vacuum line.
In one embodiment, first inert gas delivery tube road, the second inert gas delivery
It is also respectively set in the first branch and second branch and presoma transfer conduit of pipeline
There are pneumatic operated valve and mass flow controller, for controlling the opening and closing of respective pipeline.
In one embodiment, substrate is installed on the objective table of reaction chamber；
When being reacted, vacuum pump is opened, and the second inert gas piping is closed, and presoma transfer conduit is opened, and first is lazy
Property gas transport pipeline open, presoma and the first inert gas enter reaction chamber, and presoma adsorbs on substrate；
When being purged, vacuum pump is opened, and the first inert gas delivery tube road is kept to open, and the second inert gas piping is opened
It opens, presoma transfer conduit is closed, and the second inert gas enters reaction chamber through the first branch and purged, the first inert gas
Enter reaction chamber through the first inert gas delivery tube road.
In order to achieve the above object, the present invention also provides a kind of atoms carried out using above-mentioned atomic layer deposition system
Deposition method, the presoma transfer conduit include the first presoma transfer conduit and the second presoma transfer conduit, are carried out
When atom layer deposition process, vacuum pump is in the open state always,
Step 01: closing the second inert gas delivery tube road, open the first presoma transfer conduit, open the first indifferent gas
Body transfer conduit, the first presoma enters reaction chamber through the first presoma transfer conduit, and adsorbs on substrate, and first is lazy
Property gas enters reaction chamber through the first inert gas delivery tube road；
Step 02: keeping the unlatching on the first inert gas delivery tube road, keep the first inert gas through the first inert gas
Transfer conduit enters reaction chamber, closes the first presoma transfer conduit, opens the second inert gas delivery tube road, the second inertia
Gas enters reaction chamber through the second inert gas delivery tube road and carries out purging process；
Step 03: keeping the unlatching on the first inert gas delivery tube road, keep the first inert gas through the first inert gas
Transfer conduit enters reaction chamber, closes the second inert gas delivery tube road, opens the second presoma transfer conduit, the second forerunner
Body enters reaction chamber through the second presoma transfer conduit, and reacts with the first precursor on substrate and generate film；
Step 04: keeping the unlatching on the first inert gas delivery tube road, keep the first inert gas through the first inert gas
Transfer conduit enters reaction chamber, closes the second presoma transfer conduit, opens the second inert gas delivery tube road, the second inertia
Gas enters reaction chamber through the second inert gas delivery tube road and carries out purging process；
Step 05: repetitive cycling step 01~04, the preparation of film needed for completing.
In one embodiment, second inert gas delivery tube road has a main road and from separated two of main road
Branch, the first branch are connected to reaction chamber, and second branch is connected on reaction chamber vacuum line；
Step 01 specifically includes: closing the first branch, opens second branch, open vacuum pump, opens the first presoma and pass
Defeated pipeline opens the first inert gas delivery tube road；First presoma enters reaction chamber through the first presoma transfer conduit, and
And absorption is on substrate；First inert gas enters reaction chamber through the first inert gas delivery tube road；Second inert gas warp
The main road enters second branch, is extracted out using vacuum tube by vacuum pump；
Step 02 specifically includes: keeping the unlatching on the first inert gas delivery tube road, keeps the first inert gas through first
Inert gas delivery tube road enters reaction chamber；It closes the first presoma transfer conduit, close second branch, open first
Road, the second inert gas enter the first branch through main road, enter back into reaction chamber and carry out purging process；
Step 03 specifically includes: keeping the unlatching on the first inert gas delivery tube road, keeps the first inert gas through first
Inert gas delivery tube road enters reaction chamber；The first branch is closed, second branch is opened, opens the second presoma transfer tube
Road, the second presoma enters reaction chamber through the second presoma transfer conduit, and reacts life with the first precursor on substrate
At film；
Step 04 specifically includes: keeping the unlatching on the first inert gas delivery tube road, keeps the first inert gas through first
Inert gas delivery tube road enters reaction chamber；The second presoma transfer conduit is closed, second branch is closed, opens first
Road, the second inert gas enter reaction chamber through the second inert gas delivery tube road and carry out purging process.
In one embodiment, before step 01, further includes: using inert gas to the first presoma pipeline and second before
It drives body pipeline and is inflated circulation.
In one embodiment, after the step 04 and before the step 05 further include: judge whether film reaches
Required thickness；If so, terminating atomic layer level thin film depositing operation；If it is not, thening follow the steps 05.
Atomic layer deposition system and method for the invention avoids complicated gas cleaning process, it is anti-to reduce presoma
The waste of Ying Yuan；Simultaneously, it is ensured that the pressure of reaction chamber and the stabilization of airflow field, impurity caused by avoiding gas circuit from disturbing, from
And obtain the film that compactness is good, impurity content is low.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of the atomic layer deposition system of a preferred embodiment of the invention
Fig. 2 is the flow diagram of the Atomic layer deposition method of a preferred embodiment of the invention
Specific embodiment
To keep the contents of the present invention more clear and easy to understand, below in conjunction with Figure of description, the contents of the present invention are made into one
Walk explanation.Certainly the invention is not limited to the specific embodiment, general replacement known to those skilled in the art
It is included within the scope of protection of the present invention.
Atomic layer deposition system of the invention, the first presoma transfer conduit being connected with reaction chamber, the second forerunner
Body transfer conduit and the first inert gas delivery tube road, the vacuum line and vacuum pump being connected with reaction chamber, and
Second inert gas delivery tube road, connect with reaction chamber, for conveying inert gas to reaction chamber, in reaction chamber
It is purged.
Below in conjunction with attached drawing 1~2 and specific embodiment, invention is further described in detail.It should be noted that attached drawing
It is all made of very simplified form, using non-accurate ratio, and only to facilitate, clearly reach aid illustration the present embodiment
Purpose.
Referring to Fig. 1, there is reaction chamber 1 in atomic layer deposition reaction system, have in reaction chamber in the present embodiment
Objective table 5 carries substrate 4 on objective table 5, and the first inert gas piping D1 is connected with the first mass flow controller MFC1；
First presoma transfer conduit L1 is connected with the second mass flow controller MFC2；Second presoma transfer conduit L2 is connected with
Three mass flow controller MFC3；Second inert gas piping D2 is connected with the 4th mass flow controller MFC4；Here, first
Presoma one end transfer conduit L1 connects on the first inert gas delivery tube road D1, and the other end is connected in precursor source 31, separately
One piping connection precursor source 31 and the second mass flow controller MFC2.Second presoma one end transfer conduit L2 connection the
On one inert gas delivery tube road D1, the other end is connected in precursor source 32, another piping connection precursor source 32 and
Three mass flow controller MFC3.
In addition, the second inert gas delivery tube road D2 has a main road D20 and two branches separated from main road D20
D21 and D22, first branch L21 are connected to the first inert gas piping D1 close to the side of reaction chamber 1, second branch L22 connection
Onto the vacuum line of 1 lower section of reaction chamber.Pneumatic operated valve PV1, the second inertia are provided on first inert gas delivery tube road D1
It is provided on the first branch L21 of gas transport pipeline D2 on pneumatic operated valve PV4 and second branch L22 and is provided with pneumatic operated valve PV6,
It is provided with PV5 and PV3 on one presoma transfer conduit L1, connects the pipe of precursor source 3 and the second mass flow controller MFC2
Road is provided with trigger valve PV2, and the second presoma transfer conduit is also equipped with pneumatic operated valve, for controlling the opening and closing of respective pipeline.
Here, the both ends of the first presoma transfer conduit L1 are respectively arranged with pneumatic operated valve PV3 and PV5, the second presoma transfer conduit
Also there is pneumatic operated valve at both ends respectively.Here the first inert gas and the second inert gas can be identical, can be N2.The present embodiment
In, prepared film can be Al2O3, at this point, the first presoma uses the precursor species of aluminium oxide, the second presoma can
To use oxide precursor, for example, water, peroxide, oxygen, ozone etc..
In order to not interfere with each other mutually, in the present embodiment, the second inert gas piping D2 is connected to the first inert gas piping D1
Close to the side of reaction chamber 1, the first presoma transfer conduit L1, the second presoma transfer conduit L2 are connected respectively to the first inertia
Gas transport pipeline D1 is close to the side of reaction chamber 1, and the second inert gas piping D2 is connect with the first inert gas piping D1
Position be located at the lower section of the first presoma transfer conduit L1 and the position connecting the first inert gas piping D1, and before second
Drive the lower section of body transfer conduit L2 and the first inert gas piping D2 link position.Second inert gas delivery tube road D1 is also and very
Empty piping connection.
In the present embodiment, atom layer deposition process includes the alternating of reaction process and purge, until thick needed for being formed
The film of degree.
When being reacted, vacuum pump 2 is opened, and keeps the 4th mass flow controller MFC4 in the open state, and first
Road D21 is closed, and the second presoma transfer conduit is closed, and second branch D22 is opened, and the first presoma transfer conduit L1 is opened or the
Two presoma transfer conduit L2 are opened, and the first inert gas delivery tube road D1 is opened, and the first presoma or the second presoma enter
Reaction chamber 1 and the first inert gas enter reaction chamber 1, and the first presoma is adsorbed on substrate 4, the second inert gas
Enter vacuum line through main road D20, second branch D22 to be then discharged by vacuum pump 2；
When being purged, vacuum pump 2 is opened, and keeps the 4th mass flow controller MFC4 in the open state, and second
Road D22 is closed, and the first presoma transfer conduit L1 is closed, and the second presoma transfer conduit L2 is closed, and first branch D21 is opened,
First inert gas delivery tube road D1 is opened, and the second inert gas enters reaction chamber 1 through first branch D21 and purged, the
One inert gas enters reaction chamber 1 through the first inert gas delivery tube road.
In addition, when carrying out atom layer deposition process, vacuum pump 2 is in the open state always in the present embodiment；Meanwhile
First mass flow controller MFC1, the second mass flow controller MFC2, third mass flow controller MFC3 and the 4th matter
It is also in the open state always to measure flow controller MFC4.This is because vacuum pump 2 and the first mass flow controller
MFC1, the second mass flow controller MFC2, third mass flow controller MFC3 and the 4th mass flow controller MFC4 without
Method realization is switched fast, so, state is maintained a normally open to ensure the quality of atom layer deposition process gone on smoothly with film.
The detailed process of atomic layer deposition about the present embodiment can use following steps:
It here include the first presoma firstly, being inflated circulation to all presoma pipeline L1, L2 using inert gas
Pipeline L1 and the second presoma pipeline L2 are inflated circulation, and that is to say makes inert gas pass through the first presoma pipeline L1 and the
Two presoma pipeline L2, to prevent the first presoma from passing through the second forerunner by the first presoma pipeline L1 and the second presoma
Reflux when body pipeline L2.
Step 01: closing the second inert gas delivery tube road D2, close the second presoma transfer conduit L2, before opening first
Body transfer conduit L1 is driven, the first inert gas delivery tube road L1 is opened；First presoma through the first presoma transfer conduit L1 into
Enter reaction chamber 1, and is adsorbed on substrate 4；First inert gas enters reaction chamber through the first inert gas delivery tube road D1
Room 1；
Here, first branch D21 is closed, second branch D22 is opened, opens vacuum pump 2, opens the first presoma transfer tube
Road L1 opens the first inert gas delivery tube road D1；First presoma enters reaction chamber through the first presoma transfer conduit L1
1, and be adsorbed on substrate 4；First inert gas enters reaction chamber 1 through the first inert gas delivery tube road D1；Second is lazy
Property gas enters second branch D22 through main road D20, is extracted out using vacuum tube by vacuum pump 2.In the present embodiment, first is opened
Presoma transfer conduit L1 includes: two pneumatic operated valves PV3, PV5 for opening the both ends of the first presoma transfer conduit L1.
It should be noted that since the 4th mass flow controller MFC4 is in the open state, in order to avoid the second inertia
Gas is suppressed in main road D20, so, the vacuum tube being arranged below second branch D22 and reaction chamber 1 is connect, to make the
Two inert gases are taken away by vacuum pump 2.
Step 02: keeping the unlatching of the first inert gas delivery tube road D1, keep the first inert gas through the first indifferent gas
Body transfer conduit D1 enters reaction chamber 1；It closes the first presoma transfer conduit L1, open the second inert gas delivery tube road
D2, the second inert gas enter reaction chamber 1 through the second inert gas delivery tube road D2 and carry out purging process；
Here, the unlatching of the first inert gas delivery tube road D1 is kept, keeps the first inert gas through the first inert gas
Transfer conduit D1 enters reaction chamber 1；It closes the first presoma transfer conduit L1, close second branch D22, open the first branch
D21, the second inert gas enter first branch D21 through main road D20, enter back into reaction chamber 1 and carry out purging process.The present embodiment
In, close the first presoma transfer conduit L1 include: close the both ends of the first presoma transfer conduit L1 any one is pneumatic
Valve PV3, PV5 are both closed.
It should be noted that first branch D21 is opened when carrying out purging process, second branch D22 is closed, so that second
Inert gas enters reaction chamber 1 by first branch D21, on the one hand can carry out purging cleaning, another party to reaction chamber 1
Face can also maintain the pressure equilibrium and steady air current of reaction chamber 1.
Step 03: keeping the unlatching of the first inert gas delivery tube road D1, keep the first inert gas through the first indifferent gas
Body transfer conduit D1 enters reaction chamber 1；The second inert gas delivery tube road D2 is closed, the second presoma transfer conduit is opened
L2, the second presoma enters reaction chamber 1 through the second presoma transfer conduit, and reacts with the first precursor on substrate 4
Generate film；
Here, the unlatching of the first inert gas delivery tube road D1 is kept, keeps the first inert gas through the first inert gas
Transfer conduit D1 enters reaction chamber 1；First branch D21 is closed, second branch D22 is opened, opens the second presoma transfer tube
Road L2, the second presoma enter reaction chamber 1 through the second presoma transfer conduit L2, and with the first precursor on substrate 4
Reaction generates film.In the present embodiment, opens the second presoma transfer conduit packet L2 and include: opening the second presoma transfer conduit L2
Both ends two pneumatic operated valves.
Same foregoing description, since the 4th mass flow controller MFC4 is in the open state, in order to avoid the second indifferent gas
Body is suppressed in main road D20, so, second branch D22 will be set and connect with the vacuum tube of 1 lower section of reaction chamber, to make second
Inert gas is taken away by vacuum pump 2.
Step 04: keeping the unlatching of the first inert gas delivery tube road D1, keep the first inert gas through the first indifferent gas
Body transfer conduit D1 enters reaction chamber 1；The second presoma transfer conduit L2 is closed, the second inert gas delivery tube road is opened
D2, the second inert gas enter reaction chamber 1 through the second inert gas delivery tube road D2 and carry out purging process；
Here, the unlatching of the first inert gas delivery tube road D1 is kept, keeps the first inert gas through the first inert gas
Transfer conduit D1 enters reaction chamber 1；The second presoma transfer conduit L2 is closed, second branch D22 is closed, opens the first branch
D21, the second inert gas enter reaction chamber 1 through the second inert gas delivery tube road D2 and carry out purging process.In the present embodiment,
Closing the second presoma transfer conduit L2 includes: any one pneumatic operated valve or two for closing the both ends of the second presoma transfer conduit
It is a all to close.
Same foregoing description, when carrying out purging process, first branch D21 is opened, and second branch D22 is closed, so that second is lazy
Property gas reaction chamber 1 entered by first branch D21, purging cleaning on the one hand can be carried out to reaction chamber 1, on the other hand
It can also maintain the pressure equilibrium and steady air current of reaction chamber 1.
In the present embodiment, the cycle-index of adjusting process can be carried out according to actual needs, after step 04 and step 05
Before further include: judge whether film reaches required thickness；If so, terminating atomic layer level thin film depositing operation；If it is not, then executing
Step 05.
Step 05: repetitive cycling step 01~04, the preparation of film needed for completing.
Although the present invention is disclosed as above with preferred embodiment, right embodiment is illustrated only for the purposes of explanation, and
It is non-to limit the present invention, those skilled in the art can make without departing from the spirit and scope of the present invention it is several more
Dynamic and retouching, the protection scope that the present invention is advocated should be subject to claims.
Claims (9)
1. a kind of atomic layer deposition system, which is characterized in that the depositing system includes
One reaction chamber；
Presoma transfer conduit, connect with reaction chamber, for transmitting presoma to reaction chamber；
First inert gas delivery tube road, is connected with reaction chamber, for transmitting inert gas to reaction chamber, to remain anti-
Answer chamber pressure steady；
Second inert gas delivery tube road, connect with reaction chamber, for conveying inert gas to reaction chamber, to reaction chamber
Inside purged；
And vacuum line and vacuum pump, it is connect with reaction chamber, for gas extra in extraction chamber.
2. atomic layer deposition system according to claim 1, which is characterized in that second inert gas delivery tube road is also
It is connect with vacuum line.
3. atomic layer deposition system according to claim 2, which is characterized in that second inert gas delivery tube road tool
There are a main road and two branches separated from main road, the first branch to be connected to reaction chamber, second branch is connected to vacuum
On pipeline.
4. atomic layer deposition system according to claim 3, which is characterized in that first inert gas delivery tube road,
It is also respectively provided in the first branch and second branch and presoma transfer conduit on the second inert gas delivery tube road pneumatic
Valve and mass flow controller, for controlling the opening and closing of respective pipeline.
5. atomic layer deposition system according to claim 4, which is characterized in that be equipped with lining on the objective table of reaction chamber
Bottom；
When being reacted, vacuum pump is opened, and the second inert gas piping is closed, and presoma transfer conduit is opened, the first indifferent gas
Body transfer conduit is opened, and presoma and the first inert gas enter reaction chamber, and presoma adsorbs on substrate；
When being purged, vacuum pump is opened, and the first inert gas delivery tube road is kept to open, and the second inert gas piping is opened,
Presoma transfer conduit is closed, and the second inert gas enters reaction chamber through the first branch and purged, the first inert gas warp
First inert gas delivery tube road enters reaction chamber.
6. a kind of Atomic layer deposition method carried out using atomic layer deposition system described in claim 1, which is characterized in that institute
Stating presoma transfer conduit includes the first presoma transfer conduit and the second presoma transfer conduit, carries out atom layer deposition process
When, vacuum pump is in the open state always,
Step 01: closing the second inert gas delivery tube road, open the first presoma transfer conduit, open the first inert gas and pass
Defeated pipeline, the first presoma enter reaction chamber through the first presoma transfer conduit, and adsorb on substrate, the first indifferent gas
Body enters reaction chamber through the first inert gas delivery tube road；
Step 02: keeping the unlatching on the first inert gas delivery tube road, keep the first inert gas through the first inert gas delivery
Pipeline enters reaction chamber, closes the first presoma transfer conduit, opens the second inert gas delivery tube road, the second inert gas
Enter reaction chamber through the second inert gas delivery tube road and carries out purging process；
Step 03: keeping the unlatching on the first inert gas delivery tube road, keep the first inert gas through the first inert gas delivery
Pipeline enters reaction chamber, closes the second inert gas delivery tube road, opens the second presoma transfer conduit, the second presoma warp
Second presoma transfer conduit enters reaction chamber, and reacts with the first precursor on substrate and generate film；
Step 04: keeping the unlatching on the first inert gas delivery tube road, keep the first inert gas through the first inert gas delivery
Pipeline enters reaction chamber, closes the second presoma transfer conduit, opens the second inert gas delivery tube road, the second inert gas
Enter reaction chamber through the second inert gas delivery tube road and carries out purging process；
Step 05: repetitive cycling step 01~04, the preparation of film needed for completing.
7. Atomic layer deposition method according to claim 6, which is characterized in that second inert gas delivery tube road tool
There are a main road and two branches separated from main road, the first branch to be connected to reaction chamber, second branch is connected to reaction
On Chamber vacuum pipeline；
Step 01 specifically includes: closing the first branch, opens second branch, open vacuum pump, opens the first presoma transfer tube
The first inert gas delivery tube road is opened on road；First presoma enters reaction chamber through the first presoma transfer conduit, and inhales
It is attached on substrate；First inert gas enters reaction chamber through the first inert gas delivery tube road；Described in second inert gas warp
Main road enters second branch, is extracted out using vacuum tube by vacuum pump；
Step 02 specifically includes: keeping the unlatching on the first inert gas delivery tube road, keeps the first inert gas through the first inertia
Gas transport pipeline enters reaction chamber；It closes the first presoma transfer conduit, close second branch, open the first branch, the
Two inert gases enter the first branch through main road, enter back into reaction chamber and carry out purging process；
Step 03 specifically includes: keeping the unlatching on the first inert gas delivery tube road, keeps the first inert gas through the first inertia
Gas transport pipeline enters reaction chamber；The first branch is closed, second branch is opened, opens the second presoma transfer conduit, the
Two presomas enter reaction chamber through the second presoma transfer conduit, and react with the first precursor on substrate generate it is thin
Film；
Step 04 specifically includes: keeping the unlatching on the first inert gas delivery tube road, keeps the first inert gas through the first inertia
Gas transport pipeline enters reaction chamber；The second presoma transfer conduit is closed, second branch is closed, opens the first branch, the
Two inert gases enter reaction chamber through the second inert gas delivery tube road and carry out purging process.
8. Atomic layer deposition method according to claim 6 or 7, which is characterized in that before step 01, further includes: adopt
Circulation is inflated to the first presoma pipeline and the second presoma pipeline with inert gas.
9. Atomic layer deposition method according to claim 6 or 7, which is characterized in that after the step 04 and described
Before step 05 further include: judge whether film reaches required thickness；If so, terminating atomic layer level thin film depositing operation；If it is not,
Then follow the steps 05.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112695299A (en) * | 2020-12-15 | 2021-04-23 | 长江先进存储产业创新中心有限责任公司 | Deposition apparatus and method |
| WO2021129450A1 (en) * | 2019-12-23 | 2021-07-01 | 重庆大学 | Method for preparing uniform material layer based on chemical vapor deposition |
| CN115595559A (en) * | 2022-10-27 | 2023-01-13 | 拓荆科技股份有限公司（Cn） | Multi-chamber semiconductor device |
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| US20120073500A1 (en) * | 2009-09-11 | 2012-03-29 | Taketoshi Sato | Semiconductor device manufacturing method and substrate processing apparatus |
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| CN101370963A (en) * | 2006-01-19 | 2009-02-18 | Asm美国公司 | High temperature ald inlet manifold |
| US20120073500A1 (en) * | 2009-09-11 | 2012-03-29 | Taketoshi Sato | Semiconductor device manufacturing method and substrate processing apparatus |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2021129450A1 (en) * | 2019-12-23 | 2021-07-01 | 重庆大学 | Method for preparing uniform material layer based on chemical vapor deposition |
| CN112695299A (en) * | 2020-12-15 | 2021-04-23 | 长江先进存储产业创新中心有限责任公司 | Deposition apparatus and method |
| CN115595559A (en) * | 2022-10-27 | 2023-01-13 | 拓荆科技股份有限公司（Cn） | Multi-chamber semiconductor device |
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| CN109321897B (en) | 2022-01-07 |
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