CN109321897B - Atomic layer deposition system and method - Google Patents
Atomic layer deposition system and method Download PDFInfo
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- CN109321897B CN109321897B CN201710638808.6A CN201710638808A CN109321897B CN 109321897 B CN109321897 B CN 109321897B CN 201710638808 A CN201710638808 A CN 201710638808A CN 109321897 B CN109321897 B CN 109321897B
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45523—Pulsed gas flow or change of composition over time
- C23C16/45525—Atomic layer deposition [ALD]
- C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
Abstract
The invention provides an atomic layer deposition system, which is provided with a reaction chamber and a precursor transmission pipeline connected with the reaction chamber, wherein a first inert gas transmission pipeline is connected with the reaction chamber and used for transmitting inert gas to the reaction chamber so as to maintain the stable pressure of the reaction chamber; the second inert gas transmission pipeline is connected with the reaction chamber and used for transmitting inert gas to the reaction chamber and purging the reaction chamber, and the vacuum pipeline and the vacuum pump which are connected with the reaction chamber are used for pumping redundant gas in the reaction chamber, so that a complex gas cleaning process is avoided, and waste of a precursor reaction source is reduced; meanwhile, the stability of the pressure intensity and the gas flow field of the reaction chamber is ensured, and impurities caused by gas circuit disturbance are avoided, so that the film with good compactness and low impurity content is obtained.
Description
Technical Field
The invention relates to the technical field of semiconductor manufacturing, in particular to an atomic layer deposition system and an atomic layer deposition method.
Background
As the integrated circuit industry has developed, the feature size (device critical dimension) of the device has gradually decreased, and the aspect ratio (aspect ratio) has gradually increased, which has presented a serious challenge to the deposition process, especially for depositing a conformal film on a substrate with high aspect ratio. Atomic Layer Deposition (ALD) is a new method for depositing thin films to meet this challenge. Atomic layer deposition is achieved by independently introducing reaction precursors into a reactor, the reaction being catalyzed by the substrate surface. The first precursor substance is adsorbed on the surface of the substrate after entering the reactor in a pulse mode, and then the redundant precursor substance is swept out of the reactor to complete the first half reaction (half reactions); a second precursor species is then pulsed into the reactor and reacts with the first precursor species adsorbed on the substrate surface to form a molecular layer on the substrate, and excess species is purged from the reactor by purging, thus completing the second half-reaction. The ALD reaction is adversely affected by frequent fluctuations in the pressure in the reaction chamber, which is caused by the repetition of the two half-reactions until the desired thickness value is obtained.
The variables of an ALD process include various precursors and chemical reaction pathways (chemical pathways) that may be employed. Among them, the oxide route employs a metal alkyl precursor and an oxidant, and this chemical reaction method is widely used for depositing an oxide layer. Other process variables include pumping the reaction chamber to a high vacuum between reactant pulses, or continuously purging the reaction chamber with an inert gas as the reactants pass through the reaction space.
ALD reactions are relatively difficult to control. The ideal ALD reaction is one in which the precursors react at the substrate surface rather than in the chamber above the substrate. Thus, the first precursor must be completely removed from the chamber before the second precursor pulse is injected into the chamber. Traces of precursor trapped in the transfer lines and chamber, particularly the chamber volume, react to form compounds on the chamber, contaminating the substrate surface and introducing impurities. Some precursors have good adsorption to chamber materials, and it is difficult and time consuming to evacuate them from the chamber. In addition, during purging, the precursor is not introduced into the reaction chamber, but is directly pumped away by a vacuum pump, which wastes the precursor, especially the organometallic precursor, and the price is usually high. Furthermore, moisture and oxygen impurities in the precursor or purge gas materials are particularly undesirable in ALD processes, both of which can severely impact process results and present more challenges to process control.
Therefore, optimization of the ALD process and chamber purge system is needed to address these challenges.
Disclosure of Invention
In order to overcome the above problems, the present invention is directed to provide an atomic layer deposition system and method, thereby simplifying the process and improving the compactness and purity of the atomic layer deposited thin film.
To achieve the above object, the present invention provides an atomic layer deposition system including
A reaction chamber;
the precursor conveying pipeline is connected with the reaction chamber and is used for conveying the precursor to the reaction chamber;
the first inert gas transmission pipeline is connected with the reaction chamber and used for transmitting inert gas to the reaction chamber so as to maintain the pressure of the reaction chamber to be stable;
the second inert gas transmission pipeline is connected with the reaction chamber and used for conveying inert gas to the reaction chamber and purging the reaction chamber;
and the vacuum pipeline and the vacuum pump are connected with the reaction chamber and used for pumping out redundant gas in the reaction chamber.
Wherein the second inert gas transmission pipeline is also connected with a vacuum pipeline. The second inert gas transfer line has a main path and two branches branching from the main path, the first branch being connected to the reaction chamber and the second branch being connected to the vacuum line. And the first inert gas transmission pipeline, the first branch and the second branch of the second inert gas transmission pipeline and the precursor transmission pipeline are respectively provided with a pneumatic valve and a mass flow controller which are used for controlling the opening and closing of the pipelines.
A substrate is arranged on an objective table of the reaction chamber;
the precursor conveying pipeline comprises a first precursor conveying pipeline and a second precursor conveying pipeline, a first pneumatic valve is arranged on the first inert gas conveying pipeline, a fourth pneumatic valve is arranged on a first branch of the second inert gas conveying pipeline, a sixth pneumatic valve is arranged on a second branch of the second inert gas conveying pipeline, a third pneumatic valve and a fifth pneumatic valve are respectively arranged at two ends of the first precursor conveying pipeline, and pneumatic valves are respectively arranged at two ends of the second precursor conveying pipeline; the first precursor transmission pipeline, the second precursor transmission pipeline and the first branch are respectively connected with the first inert gas transmission pipeline, and the connection position of the first precursor transmission pipeline, the second precursor transmission pipeline and the first branch is located on one side of the gas outlet end of the first pneumatic valve.
When the reaction is carried out, the vacuum pump is started, the first branch of the second inert gas transmission pipeline is closed, the second branch is opened, the precursor transmission pipeline is opened, the first inert gas transmission pipeline is opened, the precursor and the first inert gas enter the reaction chamber, and the precursor is adsorbed on the substrate;
when purging is carried out, the vacuum pump is started, the first inert gas transmission pipeline is kept opened, the first branch of the second inert gas transmission pipeline is opened, the second branch of the second inert gas transmission pipeline is closed, the precursor transmission pipeline is closed, the second inert gas enters the reaction chamber through the first branch for purging, and the first inert gas enters the reaction chamber through the first inert gas transmission pipeline.
In order to achieve the above object, the present invention further provides an atomic layer deposition method using the above atomic layer deposition system, wherein the precursor delivery line includes a first precursor delivery line and a second precursor delivery line, and when performing an atomic layer deposition process, the vacuum pump is always in an on state,
step 01: closing the second inert gas transmission pipeline, opening the first precursor transmission pipeline, opening the first inert gas transmission pipeline, enabling the first precursor to enter the reaction chamber through the first precursor transmission pipeline and be adsorbed on the substrate, and enabling the first inert gas to enter the reaction chamber through the first inert gas transmission pipeline;
step 02: keeping the opening of the first inert gas transmission pipeline, keeping the first inert gas entering the reaction chamber through the first inert gas transmission pipeline, closing the first precursor transmission pipeline, opening the second inert gas transmission pipeline, and enabling the second inert gas to enter the reaction chamber through the second inert gas transmission pipeline for purging;
step 03: keeping the opening of the first inert gas transmission pipeline, keeping the first inert gas to enter the reaction chamber through the first inert gas transmission pipeline, closing the second inert gas transmission pipeline, opening the second precursor transmission pipeline, and enabling the second precursor to enter the reaction chamber through the second precursor transmission pipeline and react with the first precursor on the substrate to generate a film;
step 04: keeping the opening of the first inert gas transmission pipeline, keeping the first inert gas entering the reaction chamber through the first inert gas transmission pipeline, closing the second precursor transmission pipeline, opening the second inert gas transmission pipeline, and enabling the second inert gas to enter the reaction chamber through the second inert gas transmission pipeline for purging;
step 05: and (5) repeating the steps (01-04) to finish the preparation of the required film.
In one embodiment, the second inert gas transfer line has a main path and two branches branching from the main path, the first branch being connected to the reaction chamber and the second branch being connected to the reaction chamber vacuum line;
the step 01 specifically comprises: closing the first branch, opening the second branch, opening the vacuum pump, opening the first precursor transmission pipeline, and opening the first inert gas transmission pipeline; the first precursor enters the reaction chamber through a first precursor conveying pipeline and is adsorbed on the substrate; the first inert gas enters the reaction chamber through a first inert gas transmission pipeline; the second inert gas enters a second branch circuit through the main circuit and is pumped out by a vacuum pump through a vacuum tube;
step 02 specifically comprises: keeping the first inert gas transmission pipeline open, and keeping the first inert gas to enter the reaction chamber through the first inert gas transmission pipeline; closing the first precursor transmission pipeline, closing the second branch, opening the first branch, and allowing the second inert gas to enter the first branch through the main channel and then enter the reaction chamber for purging;
the step 04 specifically includes: keeping the first inert gas transmission pipeline open, and keeping the first inert gas to enter the reaction chamber through the first inert gas transmission pipeline; and closing the second precursor transmission pipeline, closing the second branch, opening the first branch, and allowing the second inert gas to enter the reaction chamber through the second inert gas transmission pipeline for purging.
In an embodiment, before step 01, the method further includes: and aerating and circulating the first precursor pipeline and the second precursor pipeline by adopting inert gas.
In an embodiment, after the step 04 and before the step 05, the method further includes: judging whether the film reaches the required thickness; if so, ending the atomic layer film deposition process; if not, go to step 05.
The atomic layer deposition system and the atomic layer deposition method avoid a complex gas cleaning process and reduce the waste of a precursor reaction source; meanwhile, the stability of the pressure intensity and the gas flow field of the reaction chamber is ensured, and impurities caused by gas circuit disturbance are avoided, so that the film with good compactness and low impurity content is obtained.
Drawings
FIG. 1 is a schematic diagram of an atomic layer deposition system according to an embodiment of the invention
FIG. 2 is a flow chart of an atomic layer deposition method according to a preferred embodiment of the invention
Detailed Description
In order to make the contents of the present invention more comprehensible, the present invention is further described below with reference to the accompanying drawings. The invention is of course not limited to this particular embodiment, and general alternatives known to those skilled in the art are also covered by the scope of the invention.
The atomic layer deposition system comprises a first precursor transmission pipeline, a second precursor transmission pipeline, a first inert gas transmission pipeline, a vacuum pump and a second inert gas transmission pipeline, wherein the first precursor transmission pipeline, the second precursor transmission pipeline and the first inert gas transmission pipeline are communicated with a reaction chamber, the vacuum pipeline and the vacuum pump are communicated with the reaction chamber, and the second inert gas transmission pipeline is connected with the reaction chamber and used for conveying inert gas to the reaction chamber and purging the reaction chamber.
The present invention will be described in further detail with reference to the accompanying drawings 1-2 and specific embodiments. It should be noted that the drawings are in a simplified form and are not to precise scale, and are only used for conveniently and clearly achieving the purpose of assisting in describing the embodiment.
Referring to fig. 1, in the embodiment, the ald reaction system has a reaction chamber 1 having a stage 5, the stage 5 carries a substrate 4 thereon, and a first inert gas delivery line D1 is connected to a first mass flow controller MFC 1; the first precursor delivery line L1 is connected to a second mass flow controller MFC 2; the second precursor delivery line L2 is connected to a third mass flow controller MFC 3; the second inert gas delivery line D2 is connected to a fourth mass flow controller MFC 4; here, a first precursor delivery line L1 has one end connected to a first inert gas delivery line D1, and the other end connected to the precursor source 31, and another line connecting the precursor source 31 to a second mass flow controller MFC 2. A second precursor delivery line L2 has one end connected to the first inert gas delivery line D1, another end connected to the precursor source 32, and another line connecting the precursor source 32 to a third mass flow controller MFC 3.
In addition, the second inert gas transfer line D2 has a main line D20 and two branches D21 and D22 divided from the main line D20, a first branch L21 is connected to a side of the first inert gas transfer line D1 near the reaction chamber 1, and a second branch L22 is connected to a vacuum line below the reaction chamber 1. The first inert gas transmission pipeline D1 is provided with a pneumatic valve PV1, the first branch L21 of the second inert gas transmission pipeline D2 is provided with a pneumatic valve PV4, and the second branch L22 is provided with a pneumatic valve PV6 and a first precursor transmission pipeThe line L1 is provided with PV5 and PV3, the line connecting the precursor source 3 and the second mass flow controller MFC2 is provided with a starting valve PV2, and the second precursor delivery line is also provided with a pneumatic valve for controlling the opening and closing of the respective lines. Here, the first precursor transfer line L1 is provided at both ends with pneumatic valves PV3 and PV5, respectively, and the second precursor transfer line is also provided at both ends with pneumatic valves, respectively. The first inert gas and the second inert gas may be the same, and may be N2. In this embodiment, the prepared film may be Al2O3In this case, a precursor substance of alumina is used as the first precursor, and an oxide precursor, for example, water, peroxide, oxygen, ozone, or the like can be used as the second precursor.
In order not to interfere with each other, in this embodiment, the second inert gas delivery line D2 is connected to the side of the first inert gas delivery line D1 close to the reaction chamber 1, the first precursor delivery line L1 and the second precursor delivery line L2 are respectively connected to the side of the first inert gas delivery line D1 close to the reaction chamber 1, and the position where the second inert gas delivery line D2 is connected to the first inert gas delivery line D1 is located below the position where the first precursor delivery line L1 is connected to the first inert gas delivery line D1, and below the position where the second precursor delivery line L2 is connected to the first inert gas delivery line D2. The second inert gas delivery line D1 is also connected to a vacuum line.
In this embodiment, the atomic layer deposition process includes alternating reaction processes and purging processes until a thin film of a desired thickness is formed.
During reaction, the vacuum pump 2 is started, the fourth mass flow controller MFC4 is kept in an open state, the first branch line D21 is closed, the second precursor transmission line is closed, the second branch line D22 is opened, the first precursor transmission line L1 is opened or the second precursor transmission line L2 is opened, the first inert gas transmission line D1 is opened, the first precursor or the second precursor enters the reaction chamber 1, the first inert gas enters the reaction chamber 1, the first precursor is adsorbed on the substrate 4, and the second inert gas enters the vacuum line through the main line D20 and the second branch line D22 and then is exhausted by the vacuum pump 2;
when purging is performed, the vacuum pump 2 is turned on, the fourth mass flow controller MFC4 is kept in an on state, the second branch D22 is closed, the first precursor delivery line L1 is closed, the second precursor delivery line L2 is closed, the first branch D21 is opened, the first inert gas delivery line D1 is opened, the second inert gas enters the reaction chamber 1 through the first branch D21 for purging, and the first inert gas enters the reaction chamber 1 through the first inert gas delivery line.
In addition, in this embodiment, when the atomic layer deposition process is performed, the vacuum pump 2 is always in an on state; meanwhile, the first mass flow controller MFC1, second mass flow controller MFC2, third mass flow controller MFC3, and fourth mass flow controller MFC4 are also always in the on state. This is because the vacuum pump 2, and the first, second, third and fourth mass flow controllers MFC1, MFC2, MFC3 and MFC4 cannot achieve fast switching, and thus are kept in a normally open state to ensure smooth progress of the atomic layer deposition process and quality of the thin film.
The specific process of atomic layer deposition in this embodiment may employ the following steps:
first, all the precursor lines L1, L2, including the first precursor line L1 and the second precursor line L2, are aerated with an inert gas, i.e., the inert gas is made to pass through the first precursor line L1 and the second precursor line L2, thereby preventing the first precursor from flowing back through the first precursor line L1 and the second precursor through the second precursor line L2.
Step 01: closing the second inert gas delivery line D2, closing the second precursor delivery line L2, opening the first precursor delivery line L1, and opening the first inert gas delivery line L1; the first precursor enters the reaction chamber 1 through a first precursor delivery line L1 and is adsorbed on the substrate 4; the first inert gas enters the reaction chamber 1 through a first inert gas transmission pipeline D1;
here, the first branch D21 is closed, the second branch D22 is opened, the vacuum pump 2 is opened, the first precursor delivery line L1 is opened, and the first inert gas delivery line D1 is opened; the first precursor enters the reaction chamber 1 through a first precursor delivery line L1 and is adsorbed on the substrate 4; the first inert gas enters the reaction chamber 1 through a first inert gas transmission pipeline D1; the second inert gas enters the second branch D22 through the main path D20, passes through the vacuum tube and is pumped out by the vacuum pump 2. In this embodiment, opening the first precursor delivery line L1 includes: the two pneumatic valves PV3, PV5 at both ends of the first precursor transfer line L1 were opened.
It should be noted that, since the fourth mass flow controller MFC4 is in the on state, in order to prevent the second inert gas from being trapped in the main path D20, the second branch path D22 is connected to the vacuum tube below the reaction chamber 1, so that the second inert gas is pumped away by the vacuum pump 2.
Step 02: keeping the first inert gas transmission line D1 open, and keeping the first inert gas entering the reaction chamber 1 through the first inert gas transmission line D1; closing the first precursor delivery line L1, opening the second inert gas delivery line D2, and introducing the second inert gas into the reaction chamber 1 through the second inert gas delivery line D2 for purging;
here, the first inert gas delivery line D1 is kept open, and the first inert gas is kept entering the reaction chamber 1 through the first inert gas delivery line D1; and closing the first precursor delivery pipeline L1, closing the second branch D22, opening the first branch D21, and enabling the second inert gas to enter the first branch D21 through the main pipeline D20 and then enter the reaction chamber 1 for a purging process. In this embodiment, closing the first precursor delivery line L1 includes: either or both of the pneumatic valves PV3, PV5 closing both ends of the first precursor delivery line L1 are closed.
It should be noted that, when the purging process is performed, the first branch D21 is opened, and the second branch D22 is closed, so that the second inert gas enters the reaction chamber 1 through the first branch D21, and on one hand, the purging process can be performed on the reaction chamber 1, and on the other hand, the pressure balance and the gas flow stability of the reaction chamber 1 can be maintained.
Step 03: keeping the first inert gas transmission line D1 open, and keeping the first inert gas entering the reaction chamber 1 through the first inert gas transmission line D1; closing the second inert gas delivery line D2, opening a second precursor delivery line L2, allowing a second precursor to enter the reaction chamber 1 through the second precursor delivery line, and reacting with the first precursor on the substrate 4 to generate a thin film;
here, the first inert gas delivery line D1 is kept open, and the first inert gas is kept entering the reaction chamber 1 through the first inert gas delivery line D1; the first branch D21 is closed, the second branch D22 is opened, the second precursor delivery line L2 is opened, and the second precursor enters the reaction chamber 1 through the second precursor delivery line L2 and reacts with the first precursor on the substrate 4 to form a thin film. In this embodiment, opening the second precursor delivery line package L2 includes: two pneumatic valves at both ends of the second precursor transfer line L2 were opened.
As described above, since the fourth mass flow controller MFC4 is in the on state, in order to prevent the second inert gas from being trapped in the main path D20, the second branch path D22 is provided to be connected to the vacuum tube under the reaction chamber 1, so that the second inert gas is pumped away by the vacuum pump 2.
Step 04: keeping the first inert gas transmission line D1 open, and keeping the first inert gas entering the reaction chamber 1 through the first inert gas transmission line D1; closing the second precursor delivery line L2, opening the second inert gas delivery line D2, and introducing the second inert gas into the reaction chamber 1 through the second inert gas delivery line D2 for purging;
here, the first inert gas delivery line D1 is kept open, and the first inert gas is kept entering the reaction chamber 1 through the first inert gas delivery line D1; the second precursor delivery line L2 is closed, the second branch D22 is closed, the first branch D21 is opened, and the second inert gas is introduced into the reaction chamber 1 through the second inert gas delivery line D2 for the purging process. In this embodiment, closing the second precursor delivery line L2 includes: either or both pneumatic valves at both ends of the second precursor delivery line are closed.
As described above, when the purging process is performed, the first branch D21 is opened, and the second branch D22 is closed, so that the second inert gas enters the reaction chamber 1 through the first branch D21, on one hand, the purging process can be performed on the reaction chamber 1, and on the other hand, the pressure balance and the gas flow stability of the reaction chamber 1 can be maintained.
In this embodiment, the number of cycles of the process may be adjusted according to actual needs, and after step 04 and before step 05, the method further includes: judging whether the film reaches the required thickness; if so, ending the atomic layer film deposition process; if not, go to step 05.
Step 05: and (5) repeating the steps (01-04) to finish the preparation of the required film.
Although the present invention has been described with reference to preferred embodiments, it is to be understood that the present invention is not limited to the disclosed embodiments, but rather, may be embodied in many different forms and modifications without departing from the spirit and scope of the present invention as defined by the appended claims.
Claims (5)
1. An atomic layer deposition system, the deposition system comprising
A reaction chamber;
the precursor conveying pipeline is connected with the reaction chamber and is used for conveying the precursor to the reaction chamber;
the first inert gas transmission pipeline is connected with the reaction chamber and used for transmitting inert gas to the reaction chamber so as to maintain the pressure of the reaction chamber to be stable;
the second inert gas transmission pipeline is connected with the reaction chamber and used for conveying inert gas to the reaction chamber and purging the reaction chamber;
the vacuum pipeline and the vacuum pump are connected with the reaction chamber and used for pumping redundant gas in the reaction chamber; the second inert gas transmission pipeline is also connected with a vacuum pipeline; the second inert gas transmission pipeline is provided with a main path and a first branch and a second branch which are separated from the main path, the first branch is connected to the reaction chamber, and the second branch is connected to the vacuum pipeline; a substrate is arranged on an objective table of the reaction chamber; the precursor conveying pipeline comprises a first precursor conveying pipeline and a second precursor conveying pipeline, a first pneumatic valve is arranged on the first inert gas conveying pipeline, a fourth pneumatic valve is arranged on a first branch of the second inert gas conveying pipeline, a sixth pneumatic valve is arranged on a second branch of the second inert gas conveying pipeline, a third pneumatic valve and a fifth pneumatic valve are respectively arranged at two ends of the first precursor conveying pipeline, and pneumatic valves are respectively arranged at two ends of the second precursor conveying pipeline; the first precursor transmission pipeline, the second precursor transmission pipeline and the first branch are respectively connected with the first inert gas transmission pipeline, and the connection position of the first precursor transmission pipeline, the second precursor transmission pipeline and the first branch is positioned on one side of the gas outlet end of the first pneumatic valve;
when the reaction is carried out, the vacuum pump is started, the first branch of the second inert gas transmission pipeline is closed, the second branch is opened, the precursor transmission pipeline is opened, the first inert gas transmission pipeline is opened, the precursor and the first inert gas enter the reaction chamber, and the precursor is adsorbed on the substrate;
when purging is carried out, the vacuum pump is started, the first inert gas transmission pipeline is kept opened, the first branch of the second inert gas transmission pipeline is opened, the second branch of the second inert gas transmission pipeline is closed, the precursor transmission pipeline is closed, the second inert gas enters the reaction chamber through the first branch for purging, and the first inert gas enters the reaction chamber through the first inert gas transmission pipeline.
2. An atomic layer deposition method using the atomic layer deposition system according to claim 1, wherein the precursor delivery line comprises a first precursor delivery line and a second precursor delivery line, and wherein a vacuum pump is always on during the atomic layer deposition process,
step 01: closing the second inert gas transmission pipeline, opening the first precursor transmission pipeline, opening the first inert gas transmission pipeline, enabling the first precursor to enter the reaction chamber through the first precursor transmission pipeline and be adsorbed on the substrate, and enabling the first inert gas to enter the reaction chamber through the first inert gas transmission pipeline;
step 02: keeping the opening of the first inert gas transmission pipeline, keeping the first inert gas entering the reaction chamber through the first inert gas transmission pipeline, closing the first precursor transmission pipeline, opening the second inert gas transmission pipeline, and enabling the second inert gas to enter the reaction chamber through the second inert gas transmission pipeline for purging;
step 03: keeping the opening of the first inert gas transmission pipeline, keeping the first inert gas to enter the reaction chamber through the first inert gas transmission pipeline, closing the second inert gas transmission pipeline, opening the second precursor transmission pipeline, and enabling the second precursor to enter the reaction chamber through the second precursor transmission pipeline and react with the first precursor on the substrate to generate a film;
step 04: keeping the opening of the first inert gas transmission pipeline, keeping the first inert gas entering the reaction chamber through the first inert gas transmission pipeline, closing the second precursor transmission pipeline, opening the second inert gas transmission pipeline, and enabling the second inert gas to enter the reaction chamber through the second inert gas transmission pipeline for purging;
step 05: and (5) repeating the steps (01-04) to finish the preparation of the required film.
3. The atomic layer deposition method according to claim 2, wherein the second inert gas delivery line has a main path and first and second branches branching from the main path, the first branch being connected to the reaction chamber and the second branch being connected to the reaction chamber vacuum line;
the step 01 specifically comprises: closing the first branch, opening the second branch, opening the vacuum pump, opening the first precursor transmission pipeline, and opening the first inert gas transmission pipeline; the first precursor enters the reaction chamber through a first precursor conveying pipeline and is adsorbed on the substrate; the first inert gas enters the reaction chamber through a first inert gas transmission pipeline; the second inert gas enters a second branch circuit through the main circuit and is pumped out by a vacuum pump through a vacuum tube;
step 02 specifically comprises: keeping the first inert gas transmission pipeline open, and keeping the first inert gas to enter the reaction chamber through the first inert gas transmission pipeline; closing the first precursor transmission pipeline, closing the second branch, opening the first branch, and allowing the second inert gas to enter the first branch through the main channel and then enter the reaction chamber for purging;
step 03 specifically includes: keeping the first inert gas transmission pipeline open, and keeping the first inert gas to enter the reaction chamber through the first inert gas transmission pipeline; closing the first branch, opening the second branch, opening a second precursor transmission pipeline, allowing a second precursor to enter the reaction chamber through the second precursor transmission pipeline, and reacting with the first precursor on the substrate to generate a film;
the step 04 specifically includes: keeping the first inert gas transmission pipeline open, and keeping the first inert gas to enter the reaction chamber through the first inert gas transmission pipeline; and closing the second precursor transmission pipeline, closing the second branch, opening the first branch, and allowing the second inert gas to enter the reaction chamber through the second inert gas transmission pipeline for purging.
4. The atomic layer deposition method according to claim 2 or 3, further comprising, before step 01: and aerating and circulating the first precursor pipeline and the second precursor pipeline by adopting inert gas.
5. The atomic layer deposition method according to claim 2 or 3, further comprising, after the step 04 and before the step 05: judging whether the film reaches the required thickness; if so, ending the atomic layer film deposition process; if not, go to step 05.
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| CN101370963A (en) * | 2006-01-19 | 2009-02-18 | Asm美国公司 | High temperature ald inlet manifold |
| US20120073500A1 (en) * | 2009-09-11 | 2012-03-29 | Taketoshi Sato | Semiconductor device manufacturing method and substrate processing apparatus |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101370963A (en) * | 2006-01-19 | 2009-02-18 | Asm美国公司 | High temperature ald inlet manifold |
| US20120073500A1 (en) * | 2009-09-11 | 2012-03-29 | Taketoshi Sato | Semiconductor device manufacturing method and substrate processing apparatus |
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