CN112695299B - Deposition apparatus and method - Google Patents

Deposition apparatus and method Download PDF

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Publication number
CN112695299B
CN112695299B CN202011479958.5A CN202011479958A CN112695299B CN 112695299 B CN112695299 B CN 112695299B CN 202011479958 A CN202011479958 A CN 202011479958A CN 112695299 B CN112695299 B CN 112695299B
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gas
pipeline
reaction chamber
deposition process
deposition
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CN112695299A (en
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朱燕华
罗兴安
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Yangtze River Advanced Storage Industry Innovation Center Co Ltd
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Yangtze River Advanced Storage Industry Innovation Center Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45544—Atomic layer deposition [ALD] characterized by the apparatus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24—Deposition of silicon only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

The embodiment of the invention provides a deposition device and a deposition method, wherein the device comprises: the device comprises a first gas generating sub-device, a second gas generating sub-device, a first pipeline, a second pipeline, a third pipeline and a reaction chamber; wherein the first gas generating sub-device is used for generating a first gas; the second gas generating sub-device is at least used for generating a second gas; during the deposition process, the first gas is conveyed into the reaction chamber through the first pipeline and the third pipeline so as to perform the deposition process on the semiconductor device in the reaction chamber; during the deposition process, the substances in the reaction chamber cannot enter the second pipeline and/or the second gas generation sub-device through the third pipeline; after the deposition process is completed, the second gas is delivered into the reaction chamber through the second pipe and the third pipe to clean the reaction chamber.

Description

Deposition apparatus and method
Technical Field
The invention relates to the technical field of semiconductors, in particular to a deposition device and a deposition method.
Background
During the deposition process of the semiconductor device, the deposited thin film is not only deposited on the wafer surface, but also deposited anywhere in the reaction chamber, including the wafer chuck, the gas nozzle and the inner wall of the reaction chamber, and if the reaction chamber is not cleaned in time, the thin film in the reaction chamber is peeled off from the surfaces, causing particle contamination of the deposited film, so that it is very important to clean the reaction chamber.
Related art deposition apparatus often incorporate remote plasma sub-apparatus for cleaning the reaction chamber. However, the related art deposition apparatus has problems of poor cleaning effect of the reaction chamber and poor quality of the deposited film.
Disclosure of Invention
In order to solve the related art problems, embodiments of the present invention provide a deposition apparatus and method, which can achieve good effects of cleaning a reaction chamber and forming a high-quality deposition film.
An embodiment of the present invention provides a deposition apparatus, including:
the device comprises a first gas generating sub-device, a second gas generating sub-device, a first pipeline, a second pipeline, a third pipeline and a reaction chamber; wherein, the first and the second end of the pipe are connected with each other,
the first gas generating sub-device is used for generating a first gas;
the second gas generating sub-device is at least used for generating a second gas;
during the deposition process, the first gas is conveyed into the reaction chamber through the first pipeline and the third pipeline so as to perform the deposition process on the semiconductor device in the reaction chamber; during the deposition process, the substance in the reaction chamber cannot enter the second pipeline and/or the second gas generation sub-device through the third pipeline;
after the deposition process is completed, the second gas is delivered into the reaction chamber through the second pipe and the third pipe to clean the reaction chamber.
In the above solution, the deposition apparatus further comprises: the first valve is arranged on the second pipeline before the second pipeline and the third pipeline are intersected;
during the deposition process, by closing the first valve, the substances in the reaction chamber can not enter the second pipeline and/or the second gas generation sub-device through the third pipeline;
after the deposition process is completed, the second gas is delivered to the reaction chamber through the second pipeline and the third pipeline by opening the first valve.
In the above scheme, the second gas generation sub-device is further configured to generate a third gas, where the third gas includes an inert gas;
during the deposition process, the second gas generation sub-device generates the third gas, and the third gas is conveyed into the reaction chamber through the second pipeline and a third pipeline, so that the substances in the reaction chamber cannot enter the second pipeline and/or the second gas generation sub-device through the third pipeline;
after the deposition process is completed, the second gas generating sub-device generates the second gas, and the generated second gas is conveyed to the reaction chamber through the second pipeline and the third pipeline.
In the foregoing aspect, after the deposition process is completed, the second gas generating sub-device generates the second gas and the third gas, and the generated second gas and third gas are delivered to the reaction chamber through the second pipeline and the third pipeline.
In the above scheme, the Deposition process includes an Atomic Layer Deposition process (ALD) or a Chemical vapor Deposition process (CVD).
In the above solution, the deposition apparatus further includes a pipeline connector, and the pipeline connector is provided with a first port, a second port, and a third port; the output port of the first pipeline is connected with the first port, the output port of the second pipeline is connected with the second port, and the input port of the third pipeline is connected with the third port.
The embodiment of the invention also provides a deposition method, which comprises the following steps:
generating a first gas in a first gas generating sub-assembly of the deposition apparatus during the deposition process;
conveying the first gas into a reaction chamber of the deposition device through a first pipeline of the deposition device and a third pipeline of the deposition device so as to perform deposition process treatment on the semiconductor device in the reaction chamber; during the deposition process, the substances in the reaction chamber can not enter the second pipeline of the deposition device and/or the second gas generation sub-device of the deposition device through the third pipeline;
generating at least a second gas in the second gas generation sub-assembly after the deposition process is completed;
and delivering the second gas into the reaction chamber through the second pipeline and the third pipeline so as to clean the reaction chamber.
In the above scheme, a first valve is arranged on the second pipeline before the second pipeline and the third pipeline are crossed; the method further comprises the following steps:
during the deposition process, by closing the first valve, the substances in the reaction chamber cannot enter the second pipeline and/or the second gas generation sub-device through the third pipeline;
after the deposition process is completed, the second gas is delivered to the reaction chamber through the second pipeline and the third pipeline by opening the first valve.
In the foregoing solution, the method further includes:
during the deposition process, generating a third gas in the second gas generation sub-device, and conveying the third gas into the reaction chamber through the second pipeline and a third pipeline, so that substances in the reaction chamber cannot enter the second pipeline and/or the second gas generation sub-device through the third pipeline; the third gas comprises an inert gas;
after the deposition process is completed, generating a second gas in the second gas generating sub-device, and conveying the second gas into the reaction chamber through the second pipeline and a third pipeline.
In the above scheme, the method further comprises:
after the deposition process is completed, the second gas and the third gas are generated in the second gas generation sub-device and are conveyed to the reaction chamber through the second pipeline and the third pipeline.
The embodiment of the invention provides a deposition device and a method, wherein the deposition device comprises: the device comprises a first gas generating sub-device, a second gas generating sub-device, a first pipeline, a second pipeline, a third pipeline and a reaction chamber; wherein the first gas generating sub-device is used for generating a first gas; the second gas generating sub-device is at least used for generating a second gas; during the deposition process, the first gas is conveyed into the reaction chamber through the first pipeline and the third pipeline so as to perform the deposition process on the semiconductor device in the reaction chamber; during the deposition process, the substance in the reaction chamber cannot enter the second pipeline and/or the second gas generation sub-device through the third pipeline; after the deposition process is completed, the second gas is delivered into the reaction chamber through the second pipe and the third pipe to clean the reaction chamber. In the embodiment of the invention, in the process of carrying out the deposition process treatment on the semiconductor device, the substances in the reaction chamber cannot enter the second pipeline and/or the second gas generation sub-device through the third pipeline, so that the substances in the reaction chamber in the second pipeline and/or the second gas generation sub-device are prevented from being brought back to the reaction chamber along with the first gas or the second gas after the deposition process treatment of the semiconductor device is finished and being attached to the inner surface of the reaction chamber in the process of carrying out the deposition process treatment on the semiconductor device; the problem that the aggregation substance brought back to the reaction chamber pollutes the reaction chamber or the deposition film again is avoided, the effect of cleaning the reaction chamber is good, the particle pollution problem of the deposition film is improved, and the deposition film with high quality can be formed.
Drawings
FIG. 1 is a schematic view of a deposition process performed by a deposition apparatus according to the related art;
FIG. 2 is a schematic view of the structure of a deposition apparatus according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of the connection relationship between the tube connector and the first, second and third tubes in the deposition apparatus according to the embodiment of the present invention;
FIG. 4 is a schematic view of a deposition apparatus according to an embodiment of the present invention;
FIG. 5 is a schematic view of a deposition apparatus according to another embodiment of the present invention;
FIG. 6 is a schematic flow chart illustrating a deposition method according to an embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the following describes specific technical solutions of the present invention in further detail with reference to the accompanying drawings in the embodiments of the present invention.
Fig. 1 is a schematic view illustrating a structural composition of a deposition apparatus in the related art, and as shown in fig. 1, the deposition apparatus 100 includes: a first gas generation sub-device 101 (not shown), a second gas generation sub-device 102, a first pipeline 103, a second pipeline 104, a third pipeline 105 and a reaction chamber 106; the first gas generating sub-device 101 is configured to generate a first gas for performing a deposition process on a semiconductor device in the reaction chamber 106; the second gas generating sub-device 102 at least for generating a second gas for cleaning the reaction chamber 106; during the deposition process of the semiconductor device, the first gas is delivered into the reaction chamber 106 through the first pipeline 103 and the third pipeline 105 to perform the deposition process on the semiconductor device in the reaction chamber 106; after the semiconductor device deposition process is completed, the second gas is delivered into the reaction chamber 106 through the second pipe 104 and the third pipe 105 to clean the reaction chamber 106.
However, during the deposition process of the semiconductor device, the first gas for performing the deposition process enters the reaction chamber 106 through the first pipe 103 and the third pipe 105, and at this time, no gas flows out from the second pipe 104, because the first pipe 103, the second pipe 104 and the third pipe 105 are communicated with each other, so that during the process of the semiconductor device, the gas pressure in the second pipe 104 is lower than the gas pressure in the first pipe 103 and the reaction chamber 106, and the substance in the reaction chamber 106 flows back to the second pipe 104 under the action of the pressure difference, and even enters the second gas generation sub-device 102 along the second pipe 104, thereby causing the substances in the second pipe 104 and/or the second gas generation sub-device 102 to adhere to the substances in the reaction chamber, which are brought back to the reaction chamber by the first gas during the deposition process of the semiconductor device, adhere to the inner surface of the reaction chamber or the surface of the semiconductor device, or are brought back to the reaction chamber by the second gas during the cleaning process after the deposition process of the semiconductor device; because the substances existing in the second pipeline and the reaction chamber in the second gas generation sub-device are in an aggregation shape and are difficult to clean by the second gas, the substances are brought back to the reaction chamber along with the second gas, and the substances attached to the inner surface of the reaction chamber are difficult to clean, so that the secondary pollution of the reaction chamber or a deposited film is easy to cause, namely the cleaning effect of the reaction chamber is poor, the particles of the deposited film are polluted, and the quality of the deposited film is reduced.
Based on this, in various embodiments of the present invention, during the deposition process of the semiconductor device, the first gas is conveyed into the reaction chamber through the first pipeline and the third pipeline, and the substance in the reaction chamber cannot enter the second pipeline and/or the second gas generation sub-device through the third pipeline, so that the substance in the reaction chamber does not fall on the surface of the reaction chamber component along with the gas flow during the process of the semiconductor device or during the cleaning process after the deposition process of the semiconductor device is completed, and the reaction chamber can be kept clean, thereby achieving the purpose of improving the particle contamination problem of the deposition film and improving the quality of the deposition film.
Fig. 2 is a view showing a structural composition of a deposition apparatus according to an embodiment of the present invention, and a deposition apparatus 200 according to an embodiment of the present invention includes: a first gas generation sub-device 201, a second gas generation sub-device 202, a first pipeline 203, a second pipeline 204, a third pipeline 205 and a reaction chamber 206; wherein the content of the first and second substances,
the first gas generating sub-device 201 is used for generating a first gas;
the second gas generation sub-assembly 202 for at least a second gas;
during the deposition process, the first gas is delivered into the reaction chamber 206 through the first pipe 203 and the third pipe 205 to perform the deposition process on the semiconductor device in the reaction chamber; during the deposition process, the substance in the reaction chamber 206 cannot enter the second pipeline 204 and/or the second gas generation sub-assembly 202 through the third pipeline 205;
after the deposition process is completed, the second gas is delivered into the reaction chamber 206 through the second pipe 204 and the third pipe 205 to clean the reaction chamber 206.
In practice, the deposition process includes ALD or CVD.
In practical applications, the first gas generating sub-assembly 201 is used for generating a first gas for performing a deposition process on a semiconductor device in the reaction chamber 206. The first gas generating sub-assembly 201 may include a gas box for generating a first gas for performing a deposition process on a semiconductor device in the reaction chamber 206, wherein the first gas may be stored in the gas box or may be generated by reacting one or more chemical substances in the gas box.
In practical applications, the first gas is associated with the material of the deposited film that actually needs to be deposited. For example, when the material of the deposited film in the reaction chamber 206 is silicon oxide, the first gas may include: silane (SiH) 4 ) Oxygen (O) 2 ) Tetraethoxysilane (SiO) 4 C 8 H 20 ) Ozone (O) 3 ) Etc.; when the material of the deposited film in the reaction chamber 206 is silicon, the first gas may include: silane (SiH) 4 ) Dichlorosilane (SiCl) 2 H 2 ) Trichlorosilane (SiCl) 3 H) Tetrachlorosilane (SiCl) 4 ) And so on.
The material in the reaction chamber 206 is included in the deposition processIntermediate products or final deposits that are generated within the reaction chamber 206. In practice, the second gas generating sub-assembly 202 is at least used for generating the second gas for cleaning the reaction chamber 206. The second gas may be nitrogen trifluoride (NF) 3 ) The gas after dissociation. The second gas generation sub-assembly 202 may include a gas cabinet and a Remote Plasma System (RPS); wherein the gas holder is used for providing a gas for generating the second gas, such as nitrogen trifluoride, and the gas holder can comprise a gas cylinder for storing the corresponding gas and can also generate the corresponding gas through the reaction of one or more chemical substances; the RPS is internally attached with a coil, when radio frequency current passes through the coil, an alternating current magnetic field is generated, the alternating current magnetic field generates an electric field which changes along with time through inductive coupling, and the electric field can accelerate electrons and form ionization collision, so that gas introduced into the gas holder is dissociated to form plasma.
In practical application, the first gas generating sub-device 201 is connected to the inlet of the first pipeline 203, the second gas generating sub-device 202 is connected to the inlet of the second pipeline 204, the outlet of the first pipeline 203 and the outlet of the second pipeline 204 are simultaneously connected to the inlet of the third pipeline 205, and the outlet of the third pipeline 205 is connected to the reaction chamber 206, wherein the outlet of the first pipeline 203, the outlet of the second pipeline 204 and the inlet of the third pipeline 205 form a three-way structure.
In practical application, the three-way structure can be formed integrally, or three separate pipelines can be connected by using a pipeline connector.
In practical applications, the first pipe 203, the second pipe 204, and the third pipe 205 may be connected by a pipe connector for convenience of manufacturing.
Based on this, in one embodiment, the deposition apparatus further comprises a pipe connector on which the first port, the second port and the third port are disposed; an output port of the first pipeline 203 is connected to the first port, an output port of the second pipeline 204 is connected to the second port, and an input port of the third pipeline 205 is connected to the third port.
Here, the connection relationship between the pipe connector and the first, second, and third pipes 203, 204, and 205 is as shown in fig. 3. In practical applications, the branch of the pipeline where the three ports are located in the pipeline connector may have a shape similar to the letter T (the shape of T is shown in fig. 3), a shape of Y, or the like. Thus, the first gas in the first gas generating sub-device 201 can be smoothly delivered to the reaction chamber 206 through the first pipe 203 and the third pipe 205, and the second gas in the second gas generating sub-device 202 can be smoothly delivered to the reaction chamber 206 through the second pipe 204 and the third pipe 205.
The first pipe 203, the second pipe 204 and the third pipe 205 are generally made of a material capable of transporting a high temperature, high pressure and corrosion resistant medium, such as, but not limited to, stainless steel.
During the deposition process of the semiconductor device, the first gas is delivered to the reaction chamber 206 through the first pipe 203 and the third pipe 205 to perform the deposition process on the semiconductor device in the reaction chamber 206. After the semiconductor device deposition process is completed, the second gas is delivered into the reaction chamber 206 through the second pipe 204 and the third pipe 205 to clean the reaction chamber 206.
It should be noted that, in the embodiments of the present invention, during the deposition process of the semiconductor device, the substance in the reaction chamber 206 cannot enter the second pipe 204 and/or the second gas generation sub-assembly 202 through the third pipe 205.
In practice, the substance in the reaction chamber 206 can not enter the second pipeline 204 and/or the second gas generating sub-device 202 through the third pipeline 205 in various ways.
The following description focuses on ensuring that the substances in the reaction chamber 206 do not enter the second pipeline 204 and/or the second gas generation sub-assembly 202 during the deposition process of the semiconductor device.
In practical applications, considering that the substance in the reaction chamber 206 enters the second pipeline 204 and/or the second gas generation sub-device 202, mainly because the first pipeline 203, the second pipeline 204, and the third pipeline 205 are communicated with each other, when the first gas is introduced into the third pipeline 205 from the first pipeline 203 during the deposition process of the semiconductor device, but no gas flows out from the second pipeline 204, there is a significant pressure difference between the first pipeline 203 and the second pipeline 204, so that the substance in the reaction chamber 206 flows back into the second pipeline 204 and/or the second gas generation sub-device 202, and at this time, if the backflow of the substance in the reaction chamber 206 into the second pipeline 204 and/or the second gas generation sub-device 202 can be blocked, it can be ensured that the substance in the reaction chamber 206 does not enter the second pipeline 204 and/or the second gas generation sub-device 202. In this regard, a valve may be provided in the second line 203 to block the passage of material in the reaction chamber 206 back into the second line 204 and/or the second gas generation sub-assembly 202.
Based on this, in some embodiments, the deposition apparatus further comprises: a first valve 207, said first valve 207 being arranged on the second line 204 before the second line 204 meets the third line 205;
during the deposition process of the semiconductor device, the first valve 207 is closed, so that the substance in the reaction chamber cannot enter the second pipeline 204 and/or the second gas generation sub-device 202 through the third pipeline 205;
after the semiconductor device deposition process is completed, the second gas is delivered to the reaction chamber 206 through the second pipe 204 and the third pipe 205 by opening the first valve 207.
In practical applications, as shown in fig. 4, in the deposition apparatus 200, by providing the first valve 207 on the second pipe 204 before the second pipe 204 meets the third pipe 205, when the cleaning gas does not need to be supplied to the reaction chamber 206 during the deposition process of the semiconductor device, the first valve 207 is closed, so that the substance in the reaction chamber 206 cannot enter the second pipe 204 and/or the second gas generation sub-apparatus 202 through the third pipe 205; when the cleaning gas needs to be introduced into the reaction chamber 206 during the cleaning of the reaction chamber after the deposition process of the semiconductor device is completed, the first valve 207 is opened, so that the cleaning gas enters the reaction chamber 206 through the second pipe 204 and the third pipe 205. Such a deposition apparatus ensures that the interior of the second conduit 204 and the reaction chamber 206 is clean and does not interfere with the semiconductor deposition process.
In practical applications, the first valve 207 needs to be resistant to high temperature, high pressure and corrosion, and based on this, the material of the first valve 207 may include: carbon steel, stainless steel, duplex steel, nickel alloy, and the like, but not limited thereto.
It can be understood that, the first valve is arranged on the second pipeline before the second pipeline and the third pipeline are intersected, and when cleaning gas does not need to be introduced into the reaction chamber in the process of carrying out the deposition process on the semiconductor device, the first valve is closed, so that the substances in the reaction chamber cannot enter the second pipeline and/or the second gas generation sub-device through the third pipeline; when cleaning gas needs to be introduced into the reaction chamber in the process of cleaning the reaction chamber after the deposition process of the semiconductor device is finished, the first valve is opened, so that the cleaning gas enters the reaction chamber through the second pipeline and the third pipeline. The deposition apparatus ensures the cleanliness of the second pipe and the interior of the reaction chamber, and does not affect the semiconductor deposition process, so that a high-quality deposition film can be formed.
As described above, in practical applications, considering the reason that the material in the reaction chamber 206 can enter the second pipeline 204 and/or the second gas generating sub-device 202, if the gas pressures in the first pipeline 203 and the second pipeline 204 can be balanced, it can be ensured that the material in the reaction chamber 206 can not enter the second pipeline 204 and/or the second gas generating sub-device 202. Therefore, in the process of carrying out the deposition process on the semiconductor device, the gas is introduced into the second pipeline 204 while the first pipeline 203 is introduced with the first gas, so that the gas pressure difference between the first pipeline 203 and the second pipeline 204 is balanced.
Based on this, in other embodiments, the second gas generation sub-assembly 202 is further configured to generate a third gas, the third gas comprising an inert gas;
during the deposition process of the semiconductor device, the second gas generation sub-assembly 202 generates the third gas, and the third gas is delivered to the reaction chamber 206 through the second pipe 204 and the third pipe 205, so that the substance in the reaction chamber 206 cannot enter the second pipe 204 and/or the second gas generation sub-assembly 202 through the third pipe 205 (as shown in fig. 5);
it should be noted that, during the deposition process of the semiconductor device, the third gas is supplied to the reaction chamber 206 through the second pipe 204 and the third pipe 205 to maintain a positive pressure in the second pipe 204 and the second gas generating sub-assembly 202, so that the substance in the reaction chamber 206 cannot enter the second pipe 204 and/or the second gas generating sub-assembly 202 through the third pipe 205.
After the semiconductor device deposition process is completed, the second gas generating sub-assembly 202 generates the second gas, and the generated second gas is delivered to the reaction chamber 206 through the second pipe 204 and the third pipe 205.
Here, the second gas generation sub-assembly 202 may generate a second gas including a gas for cleaning the reaction chamber and/or a third gas; the third gas comprises an inert gas. It is understood that the inert gas does not participate in the deposition reaction, and the inert gas may be used to balance the gas pressure difference between the first pipe 203 and the second pipe 204 during the deposition process of the semiconductor device. In practice, the third gas may comprise: helium (He), neon (Ne), argon (Ar), krypton (Kr), xenon (Xe), and the like, but is not limited thereto.
In practical applications, one way to realize that the second gas generating sub-device 202 can generate the second gas and the third gas is: the second gas-generating sub-assembly 202 may contain two gas cylinders simultaneously, with one gas cylinder containingContaining inert gas (third gas), the other cylinder containing NF 3 The two gas cylinders are both connected with a remote plasma system, and in the process of carrying out technological treatment on the semiconductor device, if only a third gas is needed, only the gas cylinder of the inert gas is opened; in the cleaning process of the semiconductor device after the process treatment, if the second gas and the third gas are both needed, the two gas cylinders are both opened, so that the requirements of the two gases in different processes are met.
In the semiconductor device deposition process, the second gas generating sub-assembly 202 stops generating the second gas and only generates the third gas, and the generated third gas is delivered to the reaction chamber 206 through the second pipe 204 and the third pipe 205 to balance the pressure difference between the first pipe 203 and the second pipe 204.
In practice, it is considered that the inert gas has a supply NF 3 Energy, promotion of NF 3 The second gas is generated by the second gas generating sub-assembly 202 after the semiconductor device deposition process is completed, and the inert gas can also be used as a carrier gas for the second gas to be delivered to the reaction chamber from the second pipeline and the third pipeline.
In this regard, in some embodiments, the second gas generation sub-assembly 202 generates the second gas and the third gas after the semiconductor device deposition process is completed, and the generated second gas and third gas are delivered into the reaction chamber 206 through the second pipe 204 and the third pipe 205.
In practice, a valve and a controller may be provided before the third gas enters the second gas generation sub-assembly 202 or between the second gas generation sub-assembly 202 and the second pipeline 204 to control the flow of the third gas, allowing for better pressure balance (the second pipeline has a pressure greater than or equal to the first pipeline).
Based on this, in some embodiments, the deposition apparatus further comprises a second valve and a controller (not shown in the figure); wherein:
the second valve may be disposed between a gas cylinder containing an inert gas and the remote plasma system;
the controller is used for controlling the opening of the second valve so as to adjust the speed of the third gas flowing through the second valve.
In the embodiment, in the process of carrying out the deposition process on the semiconductor device, the gas pressure in the second pipeline is kept consistent with the gas pressure in the first pipeline by the method of passing the inert gas in the second pipeline, and the substances in the reaction chamber are prevented from flowing back to the second pipeline and the second gas generation sub-device, so that the substances in the reaction chamber can not fall on the surface of the reaction chamber along with the gas flow in the process of carrying out the deposition process on the semiconductor device or after the deposition process on the semiconductor device is finished, thereby achieving the good effect of cleaning the reaction chamber, improving the particle pollution problem of the deposited film and forming the high-quality deposited film. The method is easy to realize in process and does not need to change a machine device.
An embodiment of the present invention provides a deposition apparatus, including: the device comprises a first gas generating sub-device, a second gas generating sub-device, a first pipeline, a second pipeline, a third pipeline and a reaction chamber; wherein the first gas generating sub-device is used for generating a first gas; the second gas generating sub-device is at least used for generating a second gas; during the deposition process, the first gas is conveyed into the reaction chamber through the first pipeline and the third pipeline so as to perform the deposition process on the semiconductor device in the reaction chamber; during the deposition process, the substance in the reaction chamber cannot enter the second pipeline and/or the second gas generation sub-device through the third pipeline; after the deposition process is completed, the second gas is delivered into the reaction chamber through the second pipe and the third pipe to clean the reaction chamber. In the embodiment of the invention, in the process of carrying out the deposition process treatment on the semiconductor device, the substances in the reaction chamber cannot enter the second pipeline and/or the second gas generation sub-device through the third pipeline, so that the substances in the reaction chamber in the second pipeline and/or the second gas generation sub-device are prevented from being brought back to the reaction chamber along with the first gas and being attached to the inside of the reaction chamber and the surface of the semiconductor device in the process of carrying out the deposition process treatment on the semiconductor device, and the substances in the reaction chamber which are gathered together and difficult to be cleaned by the second gas and are present in the second pipeline and/or the second gas generation sub-device are also prevented from being brought back to the reaction chamber by the second gas and being attached to the inner surface of the reaction chamber after the deposition process treatment on the semiconductor device is finished, so that the effect of cleaning the reaction chamber is achieved, the particle pollution problem of the deposited film is improved, and the high-quality deposited film can be formed.
Based on the above apparatus, an embodiment of the present invention further provides a deposition method, as shown in fig. 6, the deposition method includes:
step 601, generating a first gas in a first gas generating sub-device of a deposition device in the process of carrying out deposition process treatment;
step 602, delivering the first gas into a reaction chamber of the deposition apparatus through a first pipeline of the deposition apparatus and a third pipeline of the deposition apparatus to perform a deposition process on a semiconductor device in the reaction chamber; during the deposition process, the substances in the reaction chamber can not enter the second pipeline of the deposition device and/or the second gas generation sub-device of the deposition device through the third pipeline;
step 603, after the deposition process is completed, at least a second gas is generated in the second gas generation sub-device;
step 604, delivering the second gas into the reaction chamber through the second line and the third line to clean the reaction chamber.
In some embodiments, a first valve is arranged on the second pipeline before the second pipeline and the third pipeline meet; the method further comprises the following steps:
during the deposition process, the first valve is closed, so that the substances in the reaction chamber cannot enter the second pipeline and/or the second gas generation sub-device through the third pipeline;
after the deposition process is completed, the second gas is delivered to the reaction chamber through the second pipeline and the third pipeline by opening the first valve.
In some embodiments, during the deposition process, a third gas is generated in the second gas generation sub-device and is delivered into the reaction chamber through the second pipeline and the third pipeline, so that the substances in the reaction chamber cannot enter the second pipeline and/or the second gas generation sub-device through the third pipeline; the third gas comprises an inert gas;
after the deposition process is completed, generating a second gas in the second gas generating sub-device, and conveying the second gas into the reaction chamber through the second pipeline and a third pipeline.
In some embodiments, after the semiconductor device deposition process is completed, the second gas and the third gas are generated in the second gas generation sub-device and are delivered into the reaction chamber through the second pipeline and the third pipeline.
In some embodiments, the deposition process comprises: an atomic layer deposition process or a chemical vapor deposition process.
It should be noted that, for convenience and simplicity of description, the above-described method may refer to the corresponding process in the foregoing deposition apparatus embodiment, and details are not repeated herein.
It should be noted that: "first," "second," and the like are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order.
In addition, the technical solutions described in the embodiments of the present invention may be arbitrarily combined without conflict.
The above description is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention.

Claims (2)

1. A method of deposition, the method comprising:
generating a first gas in a first gas generating sub-device of the deposition device during the deposition process; generating a third gas in a second gas generating sub-assembly of the deposition apparatus;
conveying the first gas into a reaction chamber of the deposition device through a first pipeline of the deposition device and a third pipeline of the deposition device so as to perform deposition process treatment on the semiconductor device in the reaction chamber; during the deposition process, the third gas is conveyed into the reaction chamber through a second pipeline and a third pipeline, so that the substances in the reaction chamber cannot enter the second pipeline of the deposition device and/or a second gas generation sub-device of the deposition device through the third pipeline;
generating at least a second gas in the second gas generating sub-assembly after the deposition process is completed;
and delivering the second gas into the reaction chamber through the second pipeline and the third pipeline so as to clean the reaction chamber.
2. The method of claim 1, further comprising:
after the deposition process is completed, the second gas and the third gas are generated in the second gas generation sub-device and are conveyed to the reaction chamber through the second pipeline and the third pipeline.
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