CN106987826B - A kind of bicavate oif plasma depositing coating method - Google Patents
A kind of bicavate oif plasma depositing coating method Download PDFInfo
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- CN106987826B CN106987826B CN201710361467.2A CN201710361467A CN106987826B CN 106987826 B CN106987826 B CN 106987826B CN 201710361467 A CN201710361467 A CN 201710361467A CN 106987826 B CN106987826 B CN 106987826B
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Formation Of Insulating Films (AREA)
Abstract
The invention discloses a kind of bicavate oif plasma depositing coating method, include the following steps: that (1) vacuumizes；(2) it places substrate and is adjusted to required process station；(3) it is passed through process gas into the first reaction chamber and the second reaction chamber, meanwhile, nitrogen is passed through into purge gas inlet channel；(4) two indoor pressure of reaction chamber are adjusted；(5) substrate is preheated, and radio frequency processing is carried out to process gas, process gas is made to form plasma under the action of radio frequency, plasma forms a film in substrate surface, completes plated film.This method passes through while being passed through process gas to the first reaction chamber and the second reaction chamber, nitrogen is passed through into purge gas inlet channel, the vacuum state of purge gas inlet channel is abolished, balance the pressure at both ends, the difference between two chambers in distribution of air flow unevenness bring deposition rate can be effectively eliminated, to improve the homogeneity of technique between wafer.
Description
Technical field
The present invention relates to semiconductor coated film technical fields, specifically provide a kind of bicavate oif plasma depositing coating side
Method.
Background technique
Existing bicavate plasma processing apparatus need to clean reaction chamber before carrying out deposition plating, specifically: will be clear
Gas washing body is sent into two reaction chambers by remote plasma generator by the road, and after the completion of reaction chamber cleaning, needing will be anti-
All pipelines in chamber and device are answered to vacuumize, later, process gas is input into two reaction chambers with certain pressure
Room, however, because pipeline between plasma generator and chamber is vacuum state, understand some process gas backflow to
In above-mentioned pipeline, for the gas flow to backflow with randomness, the gas distribution that will cause between two reaction chambers is uneven, causes two chambers
Difference in indoor deposition rate.
Currently, with the continuous development of semiconductor technology, the requirement to film performance is continuously improved, therefore, improve etc. from
Replicability and homogeneity between plasma process processing procedure wafer, become people's urgent problem to be solved.
Summary of the invention
In consideration of it, the purpose of the present invention is to provide a kind of bicavate oif plasma depositing coating methods, at least to solve
Existing bicavate oif plasma depositing coating method be easy to cause two chamber plated films to have differences, and homogeneity difference between wafer etc. is asked
Topic.
The present invention provides a kind of bicavate oif plasma depositing coating methods, include the following steps:
(1) the first reaction chamber, the second reaction chamber, purge gas inlet channel and process gas inlet channel are taken out true
It is empty；
(2) substrate is respectively fed in the first reaction chamber and the second reaction chamber, and is adjusted to required process station；
(3) process gas is passed through into the first reaction chamber and the second reaction chamber by process gas inlet channel, together
When, nitrogen is passed through into purge gas inlet channel；
(4) two indoor pressure of reaction chamber are adjusted to 1~10torr；
(5) substrate is preheated to 60~500 degrees Celsius, and to the first reaction chamber and the indoor process gas of the second reaction chamber
Radio frequency processing is carried out, process gas is made to form plasma under the action of radio frequency, plasma forms a film in substrate surface, completes
Plated film.
It is preferred that in step 3, dosage≤2000sccm of nitrogen.
Further preferably, in step 4, two indoor pressure of reaction chamber are adjusted to 1.5~6torr.
Further preferably, in steps of 5, preheating substrate is to 400 degrees Celsius.
Further preferably, the outlet of the air inlet of the purge gas inlet channel in step 1 and remote plasma generator
Mouthful connection, the gas outlet of the purge gas inlet channel be two and respectively with the first reaction chamber and the second reaction chamber
Air inlet connection, the air inlet of the purge gas inlet channel is away from the air inlet of the first reaction chamber and the second reaction chamber
The distance of air inlet is identical, and the air inlet of the process gas inlet channel is connected to process gas air inlet pipeline, the technique
The gas outlet in gas inlet channel is two and is connected to respectively with the air inlet of the first reaction chamber and the second reaction chamber, described
The distance phase of the air inlet of air inlet and second reaction chamber of the gas outlet of process gas inlet channel away from the first reaction chamber
Together.
Further preferably, two gas outlets of the process gas inlet channel are respectively communicated in purge gas inlet channel
Two gas outlets at.
Bicavate oif plasma depositing coating method provided by the invention, by being reacted to the first reaction chamber and second
While chamber is passed through process gas, it is passed through nitrogen into purge gas inlet channel, it is logical that purge gas air inlet can have been abolished
The vacuum state in road balances the pressure at both ends, so that process gas is evenly distributed to the first reaction chamber and the second reaction chamber, has
Difference between the first reaction chamber of elimination of effect and the second reaction chamber in distribution of air flow unevenness bring deposition rate, to mention
The homogeneity of technique between high wafer, in addition, purge gas inlet channel is used as nitrogen inlet channel simultaneously, so that this method can be with
It is completed on existing bicavate plasma processing apparatus, and does not have to the knot for changing existing bicavate plasma processing apparatus
Structure.
Detailed description of the invention
With reference to the accompanying drawing and embodiment the present invention is described in further detail:
Fig. 1 is the knot for the bicavate plasma processing apparatus that bicavate oif plasma depositing coating method of the present invention uses
Structure schematic diagram.
Specific embodiment
The present invention provides a kind of bicavate oif plasma depositing coating methods, include the following steps:
(1) the first reaction chamber, the second reaction chamber, purge gas inlet channel and process gas inlet channel are taken out true
It is empty；
(2) substrate is respectively fed in the first reaction chamber and the second reaction chamber, and is adjusted to required process station；
(3) process gas is passed through into the first reaction chamber and the second reaction chamber by process gas inlet channel, together
When, nitrogen is passed through into purge gas inlet channel；
(4) two indoor pressure of reaction chamber are adjusted to 1~10torr；
(5) substrate is preheated to 60~500 degrees Celsius, and to the first reaction chamber and the indoor process gas of the second reaction chamber
Radio frequency processing is carried out, process gas is made to form plasma under the action of radio frequency, plasma forms a film in substrate surface, completes
Plated film.
The bicavate oif plasma depositing coating method, by being passed through work to the first reaction chamber and the second reaction chamber
While skill gas, it is passed through nitrogen into purge gas inlet channel, the vacuum shape of purge gas inlet channel can have been abolished
State balances the pressure at both ends, and process gas is made to be evenly distributed to the first reaction chamber and the second reaction chamber, effectively eliminates
Difference between one reaction chamber and the second reaction chamber in distribution of air flow unevenness bring deposition rate, to improve work between wafer
The homogeneity of skill allows this method existing double in addition, purge gas inlet channel is used as nitrogen inlet channel simultaneously
It is completed on cavate plasma processing apparatus, and does not have to the structure for changing existing bicavate plasma processing apparatus.
As the improvement of technical solution, in step 3, dosage≤2000sccm of nitrogen is purge gas inlet channel
Certain pressure is brought, prevents process gas from flowing back in purge gas inlet channel and crossfire.
As the improvement of technical solution, in step 4, two indoor pressure of reaction chamber are adjusted to 1.5~6torr.
As the improvement of technical solution, in steps of 5, substrate is preheated to 400 degrees Celsius.
In order to guarantee that nitrogen or process gas equivalent are distributed to the first reaction chamber and the second reaction chamber, as technical side
The improvement of case, as shown in Figure 1, the air inlet of the purge gas inlet channel 1 in step 1 and remote plasma generator 2 go out
Port connection, the gas outlet of the purge gas inlet channel 1 be two and respectively with the first reaction chamber 3 and the second reaction chamber
The air inlet of room 4 is connected to, and the air inlet of the purge gas inlet channel 1 is anti-away from the air inlet of the first reaction chamber 3 and second
Answer the distance of the air inlet of chamber 4 identical, the air inlet and process gas air inlet pipeline of the process gas inlet channel 5 connect
It is logical, the gas outlet of the process gas inlet channel 5 be two and respectively with the first reaction chamber 3 and the second reaction chamber 4
Air inlet connection, the gas outlet of the process gas inlet channel 5 is away from the air inlet of the first reaction chamber 3 and the second reaction chamber
The distance of 4 air inlet is identical.
As the improvement of technical solution, two gas outlets of the process gas inlet channel 5 are respectively communicated in purgative gas
At two gas outlets of body inlet channel 1.
Embodiment 1
A kind of bicavate oif plasma depositing coating method, using existing bicavate plasma processing apparatus, specifically
Include the following steps:
(1) the first reaction chamber, the second reaction chamber, purge gas inlet channel and process gas inlet channel are taken out true
It is empty；
(2) silicon wafer is respectively fed on the first reaction chamber and the indoor heating dish of the second reaction chamber；
(3) silane and an oxidation are passed through into the first reaction chamber and the second reaction chamber by process gas inlet channel
The mixed gas of phenodiazine；
(4) two indoor pressure of reaction chamber are adjusted to 10torr；
(5) preheating silicon wafer is carried out to 60 degrees Celsius, and to the first reaction chamber and the indoor process gas of the second reaction chamber
Radio frequency processing, makes process gas form plasma under the action of radio frequency, and plasma is thin in silicon chip surface formation silica
Film completes plated film.
Embodiment 2
A kind of bicavate oif plasma depositing coating method, difference from example 1 is that:
1, it in step (3), is passed through by process gas inlet channel into the first reaction chamber and the second reaction chamber
The mixed gas of silane and nitrous oxide, meanwhile, it is passed through by remote plasma generator into purge gas inlet channel
Nitrogen, the dosage of nitrogen are 2000sccm.
Embodiment 3
A kind of bicavate oif plasma depositing coating method, specifically comprises the following steps:
(1) the first reaction chamber, the second reaction chamber, purge gas inlet channel and process gas inlet channel are taken out true
It is empty；
(2) silicon wafer is respectively fed on the first reaction chamber and the indoor heating dish of the second reaction chamber；
(3) silane and ammonia are passed through into the first reaction chamber and the second reaction chamber by process gas inlet channel
Mixed gas, meanwhile, nitrogen is passed through into purge gas inlet channel by remote plasma generator, the dosage of nitrogen is
1000sccm；
(4) two indoor pressure of reaction chamber are adjusted to 1torr；
(5) preheating silicon wafer is carried out to 500 degrees Celsius, and to the first reaction chamber and the indoor process gas of the second reaction chamber
Radio frequency processing, makes process gas form plasma under the action of radio frequency, and plasma is thin in silicon chip surface formation silicon nitride
Film completes plated film.
Wherein, the purge gas inlet channel 1 for the bicavate plasma processing apparatus (as shown in Figure 1) that this method uses
Air inlet be connected to the gas outlet of remote plasma generator 2, the gas outlet of the purge gas inlet channel 1 be two and
It is connected to respectively with the air inlet of the first reaction chamber 3 and the second reaction chamber 4, the air inlet of the purge gas inlet channel 1
The distance of the air inlet of air inlet and the second reaction chamber 4 away from the first reaction chamber 3 is identical, the process gas inlet channel
5 air inlet is connected to process gas air inlet pipeline, and the gas outlet of the process gas inlet channel 5 is two and respectively with the
One reaction chamber 3 is connected to the air inlet of the second reaction chamber 4, and the gas outlet of the process gas inlet channel 5 is anti-away from first
Answer the distance of the air inlet of chamber 3 and the air inlet of the second reaction chamber 4 identical.
Embodiment 4
With embodiment 3 the difference is that:
1, it in step (3), is passed through by process gas inlet channel into the first reaction chamber and the second reaction chamber
The mixed gas of silane and ammonia, meanwhile, nitrogen, nitrogen are passed through into purge gas inlet channel by remote plasma generator
The dosage of gas is 500sccm.
2, in step (4), two indoor pressure of reaction chamber are adjusted to 1.5torr；
3, in step (5), silicon wafer is preheated to 400 degrees Celsius；
4, the process gas inlet channel 5 of the bicavate plasma processing apparatus (as shown in Figure 1) that this method uses
Two gas outlets are respectively communicated at two gas outlets of purge gas inlet channel 1.
Embodiment 5
With embodiment 4 the difference is that:
1, in step (4), two indoor pressure of reaction chamber are adjusted to 6torr.
Embodiment 6
Using deposition plating method 1000 times each to substrate plated film respectively of embodiment 1 to embodiment 5, statistics uses every kind
When film plating process, the average value of the difference percentage of the first reaction chamber and the second reaction chamber film deposition rate is as follows:
As can be seen from the above table, during deposition plating, work is being passed through into the first reaction chamber and the second reaction chamber
When skill gas, while it being passed through nitrogen into purge gas inlet channel, the film deposition rate processed can be made suitable, two
The difference of chamber is less than 1%.
Claims (5)
1. a kind of bicavate oif plasma depositing coating method, which comprises the steps of:
(1) the first reaction chamber, the second reaction chamber, purge gas inlet channel and process gas inlet channel are vacuumized,
Wherein, the air inlet of purge gas inlet channel is connected to the gas outlet of remote plasma generator, the purge gas air inlet
The gas outlet in channel is two and is connected to respectively with the air inlet of the first reaction chamber and the second reaction chamber, the purge gas
The distance of the air inlet of air inlet and second reaction chamber of the air inlet of inlet channel away from the first reaction chamber is identical, the work
The air inlet in skill gas inlet channel is connected to process gas air inlet pipeline, and the gas outlet of the process gas inlet channel is two
It is a and be connected to respectively with the air inlet of the first reaction chamber and the second reaction chamber, the gas outlet of the process gas inlet channel
The distance of the air inlet of air inlet and the second reaction chamber away from the first reaction chamber is identical；
(2) substrate is respectively fed in the first reaction chamber and the second reaction chamber, and is adjusted to required process station；
(3) process gas is passed through into the first reaction chamber and the second reaction chamber by process gas inlet channel, meanwhile, to
Nitrogen is passed through in purge gas inlet channel；
(4) two indoor pressure of reaction chamber are adjusted to 1~10torr；
(5) preheating substrate is carried out to 60~500 degrees Celsius, and to the first reaction chamber and the indoor process gas of the second reaction chamber
Radio frequency processing makes process gas form plasma under the action of radio frequency, and plasma forms a film in substrate surface, completes plating
Film.
2. bicavate oif plasma depositing coating method described in accordance with the claim 1, it is characterised in that: in step 3, nitrogen
Dosage≤2000sccm.
3. bicavate oif plasma depositing coating method described in accordance with the claim 1, it is characterised in that: in step 4, adjustment
Two indoor pressure of reaction chamber are to 1.5~6torr.
4. bicavate oif plasma depositing coating method described in accordance with the claim 1, it is characterised in that: in steps of 5, preheating
Substrate is to 400 degrees Celsius.
5. bicavate oif plasma depositing coating method described in accordance with the claim 1, it is characterised in that: the process gas into
Two gas outlets in gas channel are respectively communicated at two gas outlets of purge gas inlet channel.
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| CN201710361467.2A CN106987826B (en) | 2017-05-22 | 2017-05-22 | A kind of bicavate oif plasma depositing coating method |
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| CN106987826B true CN106987826B (en) | 2019-03-12 |
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Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN107910250A (en) * | 2017-11-16 | 2018-04-13 | 德淮半导体有限公司 | Wafer processing apparatus and method |
| CN108315720A (en) * | 2018-01-31 | 2018-07-24 | 上海集成电路研发中心有限公司 | A kind of device and method improving film thickness uniformity |
| CN113818006B (en) * | 2020-06-19 | 2023-11-17 | 拓荆科技股份有限公司 | Film preparation method |
| CN113818002B (en) * | 2020-06-19 | 2024-06-07 | 拓荆科技股份有限公司 | Film preparation method |
| CN114215984A (en) * | 2021-12-14 | 2022-03-22 | 拓荆科技股份有限公司 | Semiconductor equipment and gas conveying structure thereof |
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| CN201530864U (en) * | 2009-10-30 | 2010-07-21 | 中芯国际集成电路制造(上海)有限公司 | Chemical gas-phase deposition equipment |
| KR101111556B1 (en) * | 2004-07-29 | 2012-02-24 | 니혼 에이 에스 에무 가부시키가이샤 | Dual-chamber plasma processing apparatus |
| CN103459660A (en) * | 2011-04-07 | 2013-12-18 | 皮考逊公司 | Deposition reactor with plasma source |
| CN103632998A (en) * | 2013-11-22 | 2014-03-12 | 沈阳拓荆科技有限公司 | Plasma processing device |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030230385A1 (en) * | 2002-06-13 | 2003-12-18 | Applied Materials, Inc. | Electro-magnetic configuration for uniformity enhancement in a dual chamber plasma processing system |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101111556B1 (en) * | 2004-07-29 | 2012-02-24 | 니혼 에이 에스 에무 가부시키가이샤 | Dual-chamber plasma processing apparatus |
| CN201530864U (en) * | 2009-10-30 | 2010-07-21 | 中芯国际集成电路制造(上海)有限公司 | Chemical gas-phase deposition equipment |
| CN103459660A (en) * | 2011-04-07 | 2013-12-18 | 皮考逊公司 | Deposition reactor with plasma source |
| CN103632998A (en) * | 2013-11-22 | 2014-03-12 | 沈阳拓荆科技有限公司 | Plasma processing device |
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