CN114215984A - Semiconductor equipment and gas conveying structure thereof - Google Patents
Semiconductor equipment and gas conveying structure thereof Download PDFInfo
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- CN114215984A CN114215984A CN202111523560.1A CN202111523560A CN114215984A CN 114215984 A CN114215984 A CN 114215984A CN 202111523560 A CN202111523560 A CN 202111523560A CN 114215984 A CN114215984 A CN 114215984A
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 38
- 238000004140 cleaning Methods 0.000 claims abstract description 11
- 230000002093 peripheral effect Effects 0.000 claims description 44
- 238000010926 purge Methods 0.000 claims description 9
- 230000003247 decreasing effect Effects 0.000 claims 1
- 238000005192 partition Methods 0.000 claims 1
- 239000007789 gas Substances 0.000 abstract description 68
- 239000012495 reaction gas Substances 0.000 abstract description 27
- 230000005465 channeling Effects 0.000 abstract description 4
- 238000012545 processing Methods 0.000 abstract description 4
- 230000009286 beneficial effect Effects 0.000 abstract description 3
- 238000013461 design Methods 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 9
- 239000011261 inert gas Substances 0.000 description 7
- 238000007789 sealing Methods 0.000 description 7
- 230000007704 transition Effects 0.000 description 7
- 230000000694 effects Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 3
- 239000000376 reactant Substances 0.000 description 3
- 238000004891 communication Methods 0.000 description 2
- 238000005137 deposition process Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000000638 solvent extraction Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
Images
Classifications
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16L—PIPES; JOINTS OR FITTINGS FOR PIPES; SUPPORTS FOR PIPES, CABLES OR PROTECTIVE TUBING; MEANS FOR THERMAL INSULATION IN GENERAL
- F16L41/00—Branching pipes; Joining pipes to walls
- F16L41/02—Branch units, e.g. made in one piece, welded, riveted
- F16L41/021—T- or cross-pieces
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F16—ENGINEERING ELEMENTS AND UNITS; GENERAL MEASURES FOR PRODUCING AND MAINTAINING EFFECTIVE FUNCTIONING OF MACHINES OR INSTALLATIONS; THERMAL INSULATION IN GENERAL
- F16L—PIPES; JOINTS OR FITTINGS FOR PIPES; SUPPORTS FOR PIPES, CABLES OR PROTECTIVE TUBING; MEANS FOR THERMAL INSULATION IN GENERAL
- F16L41/00—Branching pipes; Joining pipes to walls
- F16L41/08—Joining pipes to walls or pipes, the joined pipe axis being perpendicular to the plane of the wall or to the axis of another pipe
- F16L41/088—Joining pipes to walls or pipes, the joined pipe axis being perpendicular to the plane of the wall or to the axis of another pipe fixed using an elastic grommet between the extremity of the tube and the wall
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
Abstract
The invention discloses a semiconductor device and a gas conveying structure thereof, wherein the gas conveying structure comprises a main line pipeline and at least two branch line pipelines communicated with the main line pipeline, the main line pipeline is used for being connected with a cleaning gas source, the branch line pipelines are used for being connected with a reaction station, the branch line pipelines comprise a first component communicated with the main line pipeline and a second component connected with the first component, the first component is provided with a first channel, the second component is provided with a second channel communicated with the first channel, an annular cavity separated from the first channel is formed between the first component and the second component, the second component is also provided with a flow guide hole, and the flow guide hole is communicated with the annular cavity and one end of the second channel close to the reaction station; the second component is provided with an air inlet communicated with the annular cavity, and the air inlet is used for being connected with a reaction air source. The structural design can improve the channeling problem of the reaction gas, and is beneficial to improving the processing quality of the wafer.
Description
Technical Field
The invention relates to the technical field of semiconductor equipment, in particular to semiconductor equipment and a gas conveying structure thereof.
Background
In semiconductor reaction equipment, a series/parallel pipeline structure is generally adopted to convey reaction gas and cleaning gas in front of a reaction chamber.
In the double reaction station mode, for controlling cost, one more cleaning gas source is adopted, and when the gas of the cleaning gas source is conveyed to the front end of the reaction station through a main pipeline, two branch pipelines are separated and respectively enter the two reaction stations, namely a one-to-two conveying pipeline structure is adopted. The reaction gas shares the conveying pipeline structure, that is, the reaction gas is connected to the proper position of the branch pipeline at the front end of each reaction station, and the reaction gas enters the corresponding reaction station from the branch pipeline. However, since the branch line is connected to the main line and the pressure in the branch line is relatively close to and relatively low when the process gas is introduced into the reaction station, it is found that the reaction gas easily flows in the direction of the purge gas source during use, which may cause the thickness of the film deposited on the wafer in the reaction station to fluctuate. After the deposition process is finished in the dual-reaction-station mode, the total thickness of each pair of wafer films produced by the two reaction stations is equal, which cancels the phenomenon of the same length.
In order to improve the above problem, during the deposition process, inert gas may be introduced into the idle main line to suppress the cross flow of the reaction gas, but this approach may cause the concentration distribution of the reactant on the wafer to be difficult to control, resulting in poor uniformity within the wafer.
Disclosure of Invention
The invention aims to provide a semiconductor device and a gas conveying structure thereof, wherein the gas conveying structure is designed to improve the channeling problem of reaction gas and be beneficial to improving the processing quality of wafers.
In order to solve the above technical problems, the present invention provides a gas conveying structure of a semiconductor device, including a main line pipe and at least two branch line pipes communicated with the main line pipe, wherein the main line pipe is used for connecting with a cleaning gas source, the branch line pipes are used for connecting with a reaction station, the branch line pipes include a first component communicated with the main line pipe and a second component connected with the first component, the first component has a first channel, the second component has a second channel communicated with the first channel, an annular cavity separated from the first channel is formed between the first component and the second component, the second component also has a diversion hole, and the diversion hole communicates the annular cavity and one end of the second channel close to the reaction station; the second component is provided with an air inlet communicated with the annular cavity, and the air inlet is used for being connected with a reaction air source.
In the gas delivery structure of a semiconductor device provided by the present invention, a branch line is provided with a first member and a second member, between which an annular chamber is formed, the annular cavity is separated from a first channel of the first component communicated with the main pipeline, a second channel communicated with the annular cavity and the second component through the diversion hole is close to one end of the reaction station, an air inlet of a reaction air source is communicated with the annular cavity, thus, when in work, the reaction gas enters the annular cavity through the gas inlet and then flows to one end of the second channel close to the reaction station through the diversion hole, namely, the reaction gas is guided to the direction of the reaction station as much as possible by the design of the annular cavity and the diversion holes, because the annular cavity is separated from the first channel, the probability that the reaction gas directly flows to the direction of the cleaning gas source through the first channel can be reduced, and the phenomenon of reaction gas channeling is effectively improved, so that the processing quality of the wafer is improved.
The gas delivery structure of a semiconductor device as described above, the first member has a connecting portion that mates with the second member, the connecting portion has a connecting hole that communicates with the first channel, the connecting hole has a smaller radial dimension than the first channel, the second member has a cavity facing the first member, the second channel includes a first through hole, the first through hole is in sealed connection with the connecting hole, the cavity is disposed around the first through hole, the second member is sleeved on the connecting portion, and the annular cavity is formed between an inner cavity wall of the cavity and an outer wall surface of the connecting portion.
The gas delivery structure of a semiconductor apparatus as described above, the connecting portion including a peripheral wall portion and an end wall portion, the end wall portion having the connecting hole, the second member including an outer peripheral wall body, an inner peripheral wall body, and an annular wall body, the annular wall body connecting the outer peripheral wall body and the inner peripheral wall body, the inner peripheral wall body partitioning the first through hole and the cavity, the outer peripheral wall body being externally fitted over the peripheral wall portion, the inner peripheral wall body being sealingly fitted into the connecting hole; the inner peripheral wall body surrounds and forms the first through hole, and the inner peripheral wall body, the annular wall body and the outer peripheral wall body enclose the slot cavity.
The gas delivery structure of a semiconductor device as described above, the second channel further includes a second through hole communicated with the first through hole, a radial dimension of the second through hole is larger than a radial dimension of the first through hole, the second through hole is far away from the first channel relative to the first through hole, the annular wall body is formed with the diversion hole, and the diversion hole communicates the annular cavity and the second through hole.
In the gas delivery structure of a semiconductor apparatus according to the above, the connecting portion includes an annular projection extending radially outward from an outer wall surface of the peripheral wall portion, and the second member is fitted around the connecting portion and then sealingly abuts against the annular projection.
The gas delivery structure of a semiconductor device as described above, the plurality of flow guide holes are provided, and the plurality of flow guide holes are distributed around the central axis of the annular cavity.
The gas delivery structure of a semiconductor device as described above, the branch pipeline further includes a flow guiding block hermetically connected to the second member, the flow guiding block is located between the second member and the reaction station, the flow guiding block has a flow channel communicating the second channel with the reaction station, the flow channel includes a first flow channel hole near the second channel and a second flow channel hole near the reaction station, and the cross-sectional area of the first flow channel hole gradually decreases and the cross-sectional area of the second flow channel hole gradually increases from the second channel to the reaction station.
In the gas supply structure of a semiconductor device as described above, an axis of the first channel hole coincides with an axis of the first channel, and the axis of the first channel hole is perpendicular to an axis of the second channel hole.
In the gas transportation structure of a semiconductor device, there are two branch pipelines, the axis of the first channel is perpendicular to the axis of the main pipeline, and the two branch pipelines are symmetrical with respect to the main pipeline structure.
In the gas delivery structure of a semiconductor apparatus as described above, each of the first flow channel hole and the second flow channel hole has a tapered structure.
In the gas delivery structure of a semiconductor device, an opening diameter of the second channel at the end connected to the flow guide block is smaller than an opening diameter of the first channel at the end connected to the second channel; and/or the opening diameter of one end of the second flow passage hole, which is connected with the reaction station, is smaller than that of one end of the reaction station, which is communicated with the second flow passage hole.
The invention also provides semiconductor equipment which comprises a cleaning gas source and at least two reaction stations, and further comprises the gas conveying structure, wherein the cleaning gas source is connected with the reaction stations through the gas conveying structure.
Since the above gas delivery structure has the above technical effects, a semiconductor apparatus including the gas delivery structure also has the same technical effects, and a discussion thereof will not be repeated.
Drawings
FIG. 1 is a front view of one embodiment of a gas delivery structure for a semiconductor device provided in the present invention;
FIG. 2 is a schematic sectional view taken along line A-A of FIG. 1;
FIG. 3 is a partial schematic view of portion B of FIG. 2;
fig. 4 is a schematic cross-sectional view of another angle at which the first member, the second member and the deflector block of fig. 1 are located;
fig. 5 is a partial perspective view of the first and second components of fig. 1 in position.
Description of reference numerals:
the flow of the main line pipe 10, the branch line 20,
the first member 21, the first passage 21a, the peripheral wall portion 211, the end wall portion 212, the connection hole 212a, the annular projection 213,
the second member 22, the second passage 22a, the first through hole 221a, the second through hole 222a, the groove cavity 22b, the diversion hole 22c, the air inlet 22d, the inner peripheral wall 221, the outer peripheral wall 222, and the annular wall 223;
an annular cavity S;
the flow guide block 23, the first flow passage hole 231, the second flow passage hole 232;
a sealing member 40 and a reaction gas pipeline 50.
Detailed Description
In order that those skilled in the art will better understand the disclosure, the invention will be described in further detail with reference to the accompanying drawings and specific embodiments.
Referring to fig. 1 and 2, fig. 1 is a front view of an embodiment of a gas delivery structure of a semiconductor device according to the present invention; fig. 2 is a schematic sectional view taken along the line a-a in fig. 1.
In this embodiment, the gas conveying structure of the semiconductor device includes a main pipeline 10 and two branch pipelines 20 communicated with the main pipeline 10, wherein the main pipeline 10 is used for being connected with a purge gas source (not shown in the figure), and each branch pipeline 20 is connected with one reaction station 30, in practical application, when the reaction station 30 needs to be purged, the purge gas of the purge gas source can enter the reaction station 30 through the main pipeline 10 and the branch pipelines 20 for performing a purge operation.
Referring to fig. 3 to 5 together, fig. 3 is a partial schematic view of a portion B in fig. 2; fig. 4 is a schematic cross-sectional view of another angle at which the first member, the second member and the deflector block of fig. 1 are located; fig. 5 is a partial perspective view of the first and second components of fig. 1 in position.
The branch line 20 includes a first member 21 and a second member 22, the first member 21 being connected to the main line 10, the second member 22 being connected to the first member 22, the first member 21 having a first channel 21a, the second member 22 having a second channel 22a, the first channel 21a being in communication with the passage of the main line 10, the second channel 22a communicating the first channel 21a and the reaction station 30.
The delivery of the reaction gas of the semiconductor device is also performed using the gas delivery structure, and specifically, an annular chamber S is formed between the first member 21 and the second member 22, the annular chamber S is separated from the first passage 21a of the first member 21, and the second member 22 further has a flow guide hole 22c, and the flow guide hole 22c communicates the annular chamber S and one end of the second passage 22a near the reaction station 30.
As shown in fig. 4 and 5, the second member 22 also has an inlet port 22d communicating with the annular chamber S, the inlet port 22d being connectable to a source of reactant gas via a reactant gas line 50.
Thus, when the reactor needs to work, the reaction gas can enter the annular cavity S through the reaction gas pipeline 50, and flows to the reaction station 30 after entering the second channel 22a through the diversion hole 22 c; when cleaning is required, cleaning gas enters the first channel 21a through the main line 10 and then enters the reaction station 30 through the second channel 22 a. In addition, inert gas may be introduced into the reaction station 30 by the main line 10, if necessary, during operation.
According to the arrangement of the gas conveying pipeline, the annular cavity S into which the reaction gas enters is separated from the first channel 21a, and the reaction gas is guided to the direction of the reaction station 30 under the action of the diversion holes 22c, so that the probability that the reaction gas enters one end of the second channel 22a close to the reaction station 30 and then returns to the direction of the first channel 21a to flow is reduced, the phenomenon of cross flow of the reaction gas is effectively improved, and the processing quality of wafers is improved.
The first part 21 has a connection portion to be fitted with the second part 22, the connection portion having a connection hole 212a, the connection hole 212a having a radial dimension smaller than that of the first passage 21 a; the second member 22 has a groove cavity 22b facing the first member 21, the second passage 22a of the second member 22 includes a first through hole 221a, the first through hole 221a is hermetically connected with the connection hole 212a, the groove cavity 22b is disposed around the first through hole 221a, the second member 22 is externally sleeved on the connection portion of the first member 21, and the annular cavity S is formed between the inner cavity wall of the groove cavity 22b and the outer wall surface of the connection portion.
In this way, the flow area of the gas passage at the junction of the first member 21 and the second member 22 is reduced, facilitating the provision of the annular chamber S separated from the first passage 21 a.
It should be noted that, the above and hereinafter referred to as "radial direction" refers to a direction perpendicular to the axial direction of the connection hole 212a or the first passage 21a, and does not indicate the cross-sectional shape of the connection hole 212a, and the cross-sectional shape of the first passage 21a or the connection hole 212a may be any geometric shape, such as a circle, a square, a rectangle, etc., according to the requirement of practical application.
Specifically, referring to fig. 3 and 4, the connecting portion of the first member 21 includes a peripheral wall portion 211 and an end wall portion 212, wherein a connecting hole 212a is formed in the end wall portion 212; the second member 22 includes an outer peripheral wall 222, an inner peripheral wall 221, and an annular wall 223, the annular wall 223 connects the inner peripheral wall 221 and the outer peripheral wall 222, the first through hole 221a of the second passage 22a is surrounded by the inner peripheral wall 221, and the cavity 22b is surrounded by the inner peripheral wall 221, the outer peripheral wall 222, and the annular wall 223, when assembled, the outer peripheral wall 222 of the second member 22 is externally fitted to the peripheral wall 211 of the connection portion, and the inner peripheral wall 221 of the second member 22 is sealingly inserted into the connection hole 212a of the connection portion.
It will be appreciated that in order to form the annular chamber S between the connecting portion and the second part 22, the end wall portion 212 of the connecting portion is spaced from the annular wall portion 223 of the second part 22 by a distance which may be determined according to the requirements of the actual application, and in order to facilitate the communication between the air inlet 22d provided in the second part 22 and the annular chamber S, the peripheral wall portion 211 of the connecting portion is spaced from the peripheral wall portion 222 of the second part 22 by a distance which can be appreciated in conjunction with fig. 3 and 4, thus facilitating the manufacture and assembly of the parts.
To seal the annular cavity S and to define the relative positions of the first member 21 and the second member 22 in the axial direction (i.e., the left-right direction in fig. 3 and 4) during assembly, the connecting portion of the first member 21 further includes an annular protrusion 213 extending radially outward from the outer wall surface of the peripheral wall portion 211, and the second member 22 is sleeved on the connecting portion and then abutted against the annular protrusion 213, specifically, one end of the outer peripheral wall 222 of the second member 22 close to the first member 21 is abutted against the annular protrusion 213.
Specifically, to enhance the sealing effect, a sealing member 40 is provided between the second member 22 and the annular protrusion 213, and the sealing member 40 may be in the form of a sealing rubber ring or the like.
In this embodiment, the second passage 22a of the second member 22 further includes a second through hole 222a communicating with the first through hole 221a, the radial dimension of the second through hole 222a is larger than the radial dimension of the first through hole 221, the second through hole 222a is far from the first passage 22a relative to the first through hole 221, as can be understood by referring to fig. 3 and 4, the first through hole 221a and the second through hole 222a form the second passage 22a, the second passage 22a is substantially in a stepped hole shape, a diversion hole 22c communicating the annular cavity S and one end of the second passage 22a close to the reaction station 30 may be formed on the annular wall 223 of the second member 22, and the diversion hole 22c communicates the annular cavity S and the second through hole 222 a. Thus, the reaction gas entering the annular cavity S flows into the second through hole 222a through the diversion hole 22c, and under the diversion effect of the diversion hole 22c and in combination with the pressure state in the gas conveying structure, the reaction gas basically flows towards the reaction station 30, so that the channeling probability can be reduced.
The plurality of flow guide holes 22c are arranged around the central axis of the annular cavity S, and the plurality of flow guide holes 22c can be uniformly arranged, so that the circulation of the reaction gas is facilitated.
Certainly, in practical applications, when the reaction gas is introduced to work, the main line pipeline 10 in the gas conveying structure and the first channel 21a of the first member 21 are in an idle state, and the inert gas can be still introduced according to application requirements, and at this time, under the pressing of the inert gas, the cross flow of the reaction gas can be further avoided.
In practical applications, one case is that the reaction gas is generally a mixed gas, which needs to be better mixed when flowing through the reaction station 30, and the other case is that the inert gas is used for pressing, so that the inert gas and the reaction gas also need to be uniformly mixed before the reaction station 30, in order to enable the process gases to be well mixed before entering the reaction station 30 and avoid non-uniformity in the wafer, each branch pipeline 20 further includes a flow guide block 23, the flow guide block 23 is located between the second component 22 and the reaction station 30, the flow guide block 23 is hermetically connected with the second component 22 and the reaction station 30, and specifically, sealing rubber rings may be respectively disposed at the connection positions of the flow guide block 23 and the second component 22 and the connection positions of the flow guide block 23 and the reaction station 30 to achieve sealing.
As shown in fig. 3, a transition pipeline 31 is disposed in the reaction station 30, the transition pipeline 31 may be connected to a spray component in the reaction station 30, a flow passage of the flow guide block 23 communicates with the second passage 22a of the second component 22 and the transition pipeline 31, the flow passage of the flow guide block 23 includes a first flow passage hole 231 close to the second passage 22a and a second flow passage hole 232 close to the reaction station 30, a cross-sectional area of the first flow passage hole 231 is gradually reduced and a cross-sectional area of the second flow passage hole 232 is gradually increased in a direction from the second passage 22a to the reaction station 30, that is, along a flow direction of the gas, so that after each gas enters the first flow passage hole 231, a flow state of the gas in the first flow passage hole 231 is approximately turbulent to a greater extent due to the gradual reduction in the cross-sectional area of the first flow passage hole 231, which is beneficial to mixing of each gas, and after the gas flows into the second flow passage hole 232 through the first flow passage hole 231, a pressure of the gas is reduced, when the structure is used for plasma enhanced deposition equipment, the low-probability discharge characteristic brought by low pressure can be met, more than 2 kinds of reaction gases or the reaction gases and the inert gases can be well mixed through the structure, and the uniformity in a wafer can be improved.
Specifically, the first flow channel hole 231 and the second flow channel hole 232 may both have a tapered shape, as shown in the figure, when actually disposed, the axis of the first flow channel hole 231 coincides with the axis of the first channel 21a of the first component 21, and the axis of the second flow channel hole 231 is perpendicular to the axis of the first flow channel hole 231, so that the arrangement is favorable for mixing the gas in the flow guide block 23, and is also favorable for connecting and matching the gas delivery pipeline and the reaction station 30.
In the specific arrangement, the axis of the first channel 21a of the branch pipeline 20 is perpendicular to the axis of the main pipeline 10, and the two branch pipelines 20 are symmetrical to the main pipeline 10, so that the pressure difference generated between the first flow channel holes 231 of the two flow guide blocks 23 and the front part of the reaction station 30 has the effect of forced equal distribution, and the gas amount distributed to the two reaction stations 30 is ensured to be balanced.
In the illustrated embodiment, the gas delivery structure has two branch lines 20, and it will be appreciated that in actual implementation, one main line 10 may be connected to three or more branch lines 20 at the same time, if desired or if the process conditions are met.
In addition, during actual installation, the opening diameter of the end of the second passage 22a of the second component 22 connected with the flow guide block 23, that is, the opening diameter of the end of the second through hole 222a connected with the flow guide block 23, is smaller than the opening diameter of the end of the first passage hole 231 of the flow guide block 23 connected with the second passage 22 a; the opening diameter of the end of the flow guide block 23, where the second flow passage hole 232 is connected to the reaction station 30, that is, the opening diameter of the end of the flow guide block, where the second flow passage hole 232 is connected to the transition pipeline 31, is smaller than the opening diameter of the end of the flow guide block 30, where the second flow passage hole 232 is connected to the reaction station 30, that is, the opening diameter of the end of the transition pipeline 31, where the second flow passage hole 232 is connected to the transition pipeline 232; after the arrangement, when the pipeline is installed, if the pipeline is misplaced due to structural machining errors and installation errors, the flow passage of the branch pipeline 20 has no step structure at each connecting position, and the disturbance influence on the gas is avoided.
In addition to the above gas delivery structure, the present invention also provides a semiconductor apparatus comprising a purge gas source and at least two reaction stations 30, wherein the purge gas source is connected to each reaction station 30 through the above gas delivery structure.
The semiconductor device and the gas delivery structure thereof provided by the present invention are described in detail above. The principles and embodiments of the present invention are explained herein using specific examples, which are presented only to assist in understanding the method and its core concepts. It should be noted that, for those skilled in the art, it is possible to make various improvements and modifications to the present invention without departing from the principle of the present invention, and those improvements and modifications also fall within the scope of the claims of the present invention.
Claims (12)
1. A gas conveying structure of semiconductor equipment, which comprises a main pipeline and at least two branch pipelines communicated with the main pipeline, wherein the main pipeline is used for being connected with a cleaning gas source, the branch pipelines are used for being connected with a reaction station, and the branch pipelines comprise a first component communicated with the main pipeline and a second component connected with the first component, the first component is provided with a first channel, the second component is provided with a second channel communicated with the first channel, an annular cavity separated from the first channel is formed between the first component and the second component, and the second component is also provided with a diversion hole which is communicated with the annular cavity and one end of the second channel close to the reaction station; the second component is provided with an air inlet communicated with the annular cavity, and the air inlet is used for being connected with a reaction air source.
2. The gas delivery structure of a semiconductor device according to claim 1, wherein the first member has a connecting portion which is engaged with the second member, the connecting portion has a connecting hole which communicates with the first passage, the connecting hole has a smaller radial dimension than the first passage, the second member has a cavity facing the first member, the second passage includes a first through hole which is sealingly connected with the connecting hole, the cavity is disposed around the first through hole, the second member is fitted around the connecting portion, and the annular cavity is formed between an inner cavity wall of the cavity and an outer wall surface of the connecting portion.
3. The gas delivery structure for semiconductor equipment according to claim 2, wherein the connection portion includes a peripheral wall portion and an end wall portion, the end wall portion having the connection hole, the second member includes an outer peripheral wall body, an inner peripheral wall body, and an annular wall body, the annular wall body connects the outer peripheral wall body and the inner peripheral wall body, the inner peripheral wall body partitions the first through hole and the cavity, the outer peripheral wall body is fitted over the peripheral wall portion, and the inner peripheral wall body is sealingly fitted into the connection hole; the inner peripheral wall body surrounds and forms the first through hole, and the inner peripheral wall body, the annular wall body and the outer peripheral wall body enclose the slot cavity.
4. The gas delivery structure for semiconductor equipment according to claim 3, wherein the second passage further comprises a second through hole communicating with the first through hole, the second through hole having a radial dimension larger than that of the first through hole, the second through hole being distant from the first passage with respect to the first through hole, the annular wall body being formed with the pilot hole, the pilot hole communicating the annular chamber and the second through hole.
5. The gas delivery structure according to claim 3, wherein the connecting portion includes an annular projection extending radially outward from an outer wall surface of the peripheral wall portion, and the second member is fitted over the connecting portion and then sealingly abuts against the annular projection.
6. The gas delivery structure for semiconductor devices according to any one of claims 1 to 5, wherein the baffle hole is provided in plurality, and a plurality of the baffle holes are distributed around the central axis of the annular chamber.
7. The gas delivery structure of a semiconductor device according to claim 6, wherein the branch feeder line further comprises a flow guide block sealingly connected to the second member, the flow guide block being located between the second member and the reaction station, the flow guide block having a flow passage communicating the second channel with the reaction station, the flow passage including a first flow passage hole adjacent to the second channel and a second flow passage hole adjacent to the reaction station, the first flow passage hole having a cross-sectional area gradually decreasing and the second flow passage hole having a cross-sectional area gradually increasing in a direction from the second channel to the reaction station.
8. The gas delivery structure of a semiconductor apparatus according to claim 7, wherein an axis of the first flow channel hole coincides with an axis of the first channel, and the axis of the first flow channel hole is arranged perpendicular to an axis of the second flow channel hole.
9. The gas transport structure for a semiconductor device according to claim 8, wherein there are two branch lines, an axis of the first channel is perpendicular to an axis of the main line, and the two branch lines are symmetrical with respect to the main line structure.
10. The gas delivery structure of a semiconductor device according to claim 7, wherein the first flow channel hole and the second flow channel hole each have a tapered structure.
11. The gas delivery structure of a semiconductor device according to claim 7, wherein an opening diameter of an end of the second channel connected to the flow guide block is smaller than an opening diameter of an end of the first channel hole connected to the second channel; and/or the opening diameter of one end of the second flow passage hole, which is connected with the reaction station, is smaller than that of one end of the reaction station, which is communicated with the second flow passage hole.
12. A semiconductor apparatus comprising a purge gas source and at least two reaction stations, further comprising a gas delivery structure according to any of claims 1-11, wherein the purge gas source is connected to the reaction stations through the gas delivery structure.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111523560.1A CN114215984A (en) | 2021-12-14 | 2021-12-14 | Semiconductor equipment and gas conveying structure thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111523560.1A CN114215984A (en) | 2021-12-14 | 2021-12-14 | Semiconductor equipment and gas conveying structure thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN114215984A true CN114215984A (en) | 2022-03-22 |
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