CN116716595A - Gas spray head and chemical vapor deposition equipment - Google Patents
Gas spray head and chemical vapor deposition equipment Download PDFInfo
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- CN116716595A CN116716595A CN202310685373.6A CN202310685373A CN116716595A CN 116716595 A CN116716595 A CN 116716595A CN 202310685373 A CN202310685373 A CN 202310685373A CN 116716595 A CN116716595 A CN 116716595A
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- flow resistance
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- 238000005229 chemical vapour deposition Methods 0.000 title claims abstract description 16
- 239000007921 spray Substances 0.000 title abstract description 43
- 239000007789 gas Substances 0.000 claims abstract description 711
- 238000009792 diffusion process Methods 0.000 claims abstract description 210
- 239000012495 reaction gas Substances 0.000 claims abstract description 42
- 239000000758 substrate Substances 0.000 claims abstract description 31
- 238000004891 communication Methods 0.000 claims abstract description 5
- 230000001105 regulatory effect Effects 0.000 claims description 18
- 230000000149 penetrating effect Effects 0.000 claims description 6
- 238000007789 sealing Methods 0.000 claims description 5
- 230000000694 effects Effects 0.000 abstract description 4
- 238000000034 method Methods 0.000 description 15
- 239000010408 film Substances 0.000 description 11
- 238000010586 diagram Methods 0.000 description 8
- 210000003437 trachea Anatomy 0.000 description 7
- 239000004065 semiconductor Substances 0.000 description 6
- 238000005507 spraying Methods 0.000 description 6
- 239000002184 metal Substances 0.000 description 5
- 230000000903 blocking effect Effects 0.000 description 4
- 238000005192 partition Methods 0.000 description 4
- 239000000376 reactant Substances 0.000 description 4
- 230000007423 decrease Effects 0.000 description 2
- 150000004678 hydrides Chemical class 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000003491 array Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- ZZUFCTLCJUWOSV-UHFFFAOYSA-N furosemide Chemical compound C1=C(Cl)C(S(=O)(=O)N)=CC(C(O)=O)=C1NCC1=CC=CO1 ZZUFCTLCJUWOSV-UHFFFAOYSA-N 0.000 description 1
- 238000000265 homogenisation Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
Abstract
The invention discloses a gas spray head and chemical vapor deposition equipment, wherein the gas spray head is used for inputting reaction gas into a reaction chamber, and comprises the following components: an air inlet; a gas diffusion chamber in communication with the gas inlet; a plurality of air homogenizing pipes which are arranged in the gas diffusion chamber and communicated with the reaction chamber, and a plurality of air inlets are axially arranged on the side wall of the air homogenizing pipes; the flow resistance adjusting plug is hermetically penetrated into the even air pipe from the upper end; the flow resistance adjusting plugs are made to move up and down in the gas homogenizing pipes, and the number of the gas inlets which are not plugged by the flow resistance adjusting plugs on the gas homogenizing pipes is adjusted so as to adjust the flow resistance of the gas homogenizing pipes, so that the flow of the reaction gas when the gas shower head is communicated by each gas homogenizing pipe is homogenized, and the effect of homogenizing gas is achieved. The chemical vapor deposition equipment using the gas spray head can uniformly guide the reaction gas subjected to flow resistance adjustment by the gas spray head into the reaction chamber, and can form a film layer with uniform thickness on the surface of the substrate.
Description
Technical Field
The invention relates to the technical field of semiconductor equipment, in particular to a gas spray header and chemical vapor deposition equipment.
Background
Please refer to fig. 13. A semiconductor processing apparatus (for example, MOCVD apparatus) for forming a film on a substrate (wafer) has a substrate support section 2 in a reaction chamber 1, a substrate 3 is placed on the substrate support section 2, and a gas shower head 4 is provided so as to face the substrate support section 2. The gas shower head 4 is provided with a gas inlet 5, and a reaction gas 6 is introduced into the gas shower head 4 through the gas inlet 5. The bottom of the gas spray header 4 is provided with a spray opening 7, reaction gas enters the gas spray header 4 through the gas inlet 5 and then is introduced into the reaction chamber 1 through the spray opening 7, so that film is formed on the substrate 3, and tail gas is discharged out of the reaction chamber 1 through the gas outlet 8.
With the development of semiconductor technology, the size of the reaction chamber is increasing, and thus the size of the showerhead is also required to be correspondingly increased. When the shower head of the existing semiconductor process equipment is used for dealing with a small-size reaction chamber, the gas homogenizing effect of the shower head on the process gas is relatively uniform. However, when dealing with a large-sized reaction chamber, although the uniformity of the process gas ejected from the gas holes can be improved by adding more gas inlets to the showerhead as the size of the showerhead increases, there is still a problem in that the amount of process gas is small at a position far from the gas inlets because the gas pressure at a position far from the gas inlets is lower than the gas pressure at a position near the gas inlets, resulting in uneven thickness of the thin film formed on the substrate. Particularly, aiming at the supply of metal organic source gas in the MOCVD process, the existing spray header is more difficult to realize homogenization of the metal organic source gas, so that certain influence is brought to the quality of the film forming process.
Disclosure of Invention
The invention aims to overcome the defects in the prior art and provide a gas spray head and chemical vapor deposition equipment.
In order to achieve the above purpose, the technical scheme of the invention is as follows:
the invention provides a gas shower head for inputting reaction gas into a reaction chamber, comprising:
an air inlet;
a gas diffusion chamber in communication with the gas inlet;
the gas homogenizing pipes are arranged in the gas diffusion chamber and communicated with the reaction chamber, and a plurality of gas inlets are axially arranged on the side wall of each gas homogenizing pipe;
the flow resistance adjusting plug is arranged in the even air pipe in a sealing penetrating way from the upper end;
the flow resistance adjusting plug moves up and down in the air homogenizing pipe, and the number of air inlets on the air homogenizing pipe, which are not plugged by the flow resistance adjusting plug, is adjusted to adjust the flow resistance of the air homogenizing pipe.
Further, the number of the air inlets which are not blocked by the flow resistance adjusting plugs on the air homogenizing pipe which is close to the air inlet is smaller than the number of the air inlets which are not blocked by the flow resistance adjusting plugs on the air homogenizing pipe which is far away from the air inlet.
Further, the number of the air inlets which are not plugged by the flow resistance adjusting plugs on the air homogenizing pipe increases gradually along the direction from the air inlet to the air inlet.
Further, the flow resistance adjusting plug comprises a screw rod and a nut matched with the screw rod, the screw rod penetrates through the nut and the air homogenizing pipe and is used for blocking the air inlet hole, and the nut is arranged at the upper end of the air homogenizing pipe and is used for blocking the upper end of the air homogenizing pipe.
Further, the plurality of air inlets are arranged on the top surface of the gas diffusion chamber, the air inlets correspond to a plurality of air homogenizing areas, each air homogenizing area is a circular area which is projected on the bottom surface of the gas diffusion chamber by taking the corresponding central point of the air inlet as the center of a circle and the radius R, the circular areas are not overlapped with each other, R/4 is less than or equal to R/2, and R is the equivalent radius of the gas spray head.
Further, on any radius in each circular area, along the radial direction of the center of the circular area pointing to the edge, the number of air inlets which are not plugged by the flow resistance adjusting plugs on the air homogenizing pipe is increased by a first slope k1, and the number of air inlets which are not plugged by the flow resistance adjusting plugs on the air homogenizing pipe at the position which is not covered by the circular area and the position which is at the most edge of the circular area is the same.
Further, the first slope k1 satisfies 0 < k1 < H/r, wherein 0 < H, H being the height of the gas diffusion chamber.
Further, the plurality of air inlets are arranged on the side face of the gas diffusion chamber and are positioned on the outer side of the air homogenizing pipe relatively, the air inlets correspond to a plurality of air homogenizing pipe areas, each air homogenizing pipe area is a region where a first circle projected on the bottom face of the gas diffusion chamber with the center point of the corresponding air inlet as the center and the radius R intersects with the bottom face of the gas diffusion chamber, and each intersecting region is not overlapped with each other, wherein R/R is more than or equal to R/2, and R is the equivalent radius of the gas spray head.
Further, a second circle projected on the bottom surface of the gas diffusion chamber with the center point of the corresponding gas inlet and the radius of L is intersected with the intersected region on an arc line, the number of the gas inlets which are not plugged by the flow resistance adjusting plugs on the gas homogenizing pipe on the arc line is the same, with the increase of L, the number of the gas inlets which are not plugged by the flow resistance adjusting plugs on the gas homogenizing pipe on the arc line is increased by a second slope k2, the number of the gas inlets which are not plugged by the flow resistance adjusting plugs on the gas homogenizing pipe on the most edge of the intersected region at the coverage position of the intersected region is the same, wherein the projection of the center point of the corresponding gas inlet on the bottom surface of the gas diffusion chamber is defined as an O point, the arc line does not pass through the O point, L is the radial distance between any point on the gas homogenizing pipe between the O point and the center point of the bottom surface of the gas diffusion chamber and the O point, and L is more than or equal to 0.
Further, the second slope k2 satisfies 0 < k2 < H/r, wherein 0 < H, H being the height of the gas diffusion chamber.
Further, at least one gas homogenizing ring is arranged in the gas diffusion chamber and surrounds between the outer sides of all the gas homogenizing pipes and the side wall of the gas diffusion chamber.
Further, when the number of gas equalizing rings is plural, the height of the gas equalizing ring positioned at the inner ring is not lower than the height of the gas equalizing ring positioned at the outer ring.
Further, the height of the gas homogenizing ring is more than or equal to H/2, and H is the height of the gas diffusion chamber.
Further, the height of the gas homogenizing ring is not higher than the height of the gas homogenizing pipe.
Further, a plurality of spraying ports communicated with the reaction chamber are formed in the bottom of the gas diffusion chamber, and the spraying ports are communicated with the bottom ends of the gas homogenizing pipes in a one-to-one correspondence mode.
Further, the gas diffusion chamber includes a first gas diffusion chamber and a second gas diffusion chamber that stack the setting, the air inlet is including locating on the top surface of first gas diffusion chamber to a plurality of first air inlets of first reaction gas of input in the first gas diffusion chamber and locating on the side of second gas diffusion chamber to a plurality of second air inlets of second reaction gas of input in the second gas diffusion chamber, second gas diffusion chamber bottom be equipped with a plurality of first shower mouths and a plurality of second shower mouths of reaction chamber intercommunication, in order to respectively with first reaction gas with the second reaction gas is inputed in the reaction chamber, the even trachea includes locating a plurality of first even trachea in the first gas diffusion chamber and locating a plurality of second even trachea in the second gas diffusion chamber, first even trachea is from first gas diffusion chamber link up downwards to second gas diffusion chamber with first shower mouths intercommunication, first trachea with second even trachea keep apart each other the even trachea with the second shower mouths intercommunication.
The invention also provides chemical vapor deposition equipment, which comprises a substrate supporting part arranged in the reaction chamber and used for arranging a substrate, and the gas spray head, wherein the gas spray head is arranged opposite to the substrate supporting part and used for uniformly introducing reaction gas subjected to flow resistance adjustment by the gas spray head into the reaction chamber so as to form a film layer with uniform thickness on the surface of the substrate.
According to the invention, the gas homogenizing pipe is arranged in the gas diffusion chamber of the gas spray head, and the number of the air inlets which are not plugged by the flow resistance adjusting plugs on the gas homogenizing pipe is adjusted by moving the flow resistance adjusting plugs which are hermetically penetrated into the gas homogenizing pipe from the upper end up and down, so that the flow resistance of the gas homogenizing pipe is adjusted, and the flow of gas when the gas spray head is led by each gas homogenizing pipe can be homogenized, so that the effect of homogenizing gas is achieved.
By arranging the gas spray head on the chemical vapor deposition equipment, the reaction gas subjected to flow resistance adjustment by the gas spray head can be uniformly introduced into the reaction chamber, so that a film layer with uniform thickness can be formed on the surface of the substrate. And because the flow resistance of each even gas pipe can be independently set, the air flow control device can be suitable for different process requirements without changing the gas spray head, and saves the cost.
Drawings
FIG. 1 is a schematic view of a gas shower head according to a first embodiment of the present invention;
FIG. 2 is a schematic diagram showing a flow resistance adjusting plug according to a preferred embodiment of the present invention;
FIG. 3 is a schematic view of a top inlet according to a preferred embodiment of the present invention;
FIG. 4 is a schematic diagram showing a distribution pattern of the top air inlet corresponding to the uniform air pipe region according to a preferred embodiment of the present invention;
FIG. 5 is a schematic view showing a side air inlet structure according to a preferred embodiment of the present invention;
FIG. 6 is a schematic diagram showing a distribution pattern of side air inlets corresponding to the uniform air pipe region according to a preferred embodiment of the present invention;
FIG. 7 is a schematic diagram of flow resistance adjustment for the gas equalization pipe in the gas equalization pipe region of FIG. 6;
FIG. 8 is a schematic view showing an arrangement of a gas distributing ring in a side-inlet gas diffusion chamber according to a preferred embodiment of the present invention;
FIG. 9 is a schematic diagram of a gas shower head according to a second embodiment of the present invention;
FIG. 10 is an enlarged schematic view of a portion of the gas shower head of FIG. 9;
FIG. 11 is a schematic view of the gas inlet arrangement of a gas shower of FIG. 9;
FIG. 12 is a schematic view showing the arrangement of a gas shower head on a chemical vapor deposition apparatus according to a preferred embodiment of the present invention;
Fig. 13 is a schematic view showing a structure of a conventional semiconductor processing apparatus for forming a film on a substrate.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions in the embodiments of the present invention will be clearly and completely described below, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention. Unless otherwise defined, technical or scientific terms used herein should be given the ordinary meaning as understood by one of ordinary skill in the art to which this invention belongs. As used herein, the word "comprising" and the like means that elements or items preceding the word are included in the element or item listed after the word and equivalents thereof without precluding other elements or items.
The invention relates to a gas spray head, which is used for inputting reaction gas into a reaction chamber, and comprises the following components:
an air inlet;
a gas diffusion chamber in communication with the gas inlet;
The gas homogenizing pipes are arranged in the gas diffusion chamber and communicated with the reaction chamber, and a plurality of gas inlets are axially arranged on the side wall of each gas homogenizing pipe;
the flow resistance adjusting plug is arranged in the even air pipe in a sealing penetrating way from the upper end;
the flow resistance adjusting plug moves up and down in the air homogenizing pipe, and the number of air inlets on the air homogenizing pipe, which are not plugged by the flow resistance adjusting plug, is adjusted to adjust the flow resistance of the air homogenizing pipe.
According to the invention, the gas homogenizing pipe is arranged in the gas diffusion chamber of the gas spray head, and the number of the air inlets which are not plugged by the flow resistance adjusting plugs on the gas homogenizing pipe is adjusted by moving the flow resistance adjusting plugs which are hermetically penetrated into the gas homogenizing pipe from the upper end up and down, so that the flow resistance of the gas homogenizing pipe is adjusted, and the flow of gas when the gas spray head is led by each gas homogenizing pipe can be homogenized, so that the effect of homogenizing gas is achieved.
By arranging the gas spray head on the chemical vapor deposition equipment, the reaction gas subjected to flow resistance adjustment by the gas spray head can be uniformly introduced into the reaction chamber, so that a film layer with uniform thickness can be formed on the surface of the substrate. And because the flow resistance of each even gas pipe can be independently adjusted, the air flow control device can be suitable for different process requirements without changing a gas spray head, and saves cost.
The following describes the embodiments of the present invention in further detail with reference to the accompanying drawings.
Referring to fig. 1, fig. 1 is a schematic structural diagram of a gas shower head according to a first preferred embodiment of the invention. As shown in fig. 1, a gas showerhead of the present invention may be used to homogenize a reaction gas introduced into a reaction chamber of a chemical vapor deposition apparatus so that the treated reaction gas may be introduced into the reaction chamber at a uniform flow rate, thereby enabling formation of a film layer having a uniform thickness on a surface of a substrate (e.g., a semiconductor wafer).
The gas spray head 10 comprises a gas diffusion chamber 13 formed by wrapping a shell 11 and a plurality of gas homogenizing pipes 12 arranged in the gas diffusion chamber 13, wherein the gas homogenizing pipes 12 are communicated with the reaction chamber. The housing 11 may be disposed directly above a substrate to be processed, and has a bottom surface parallel to the substrate surface and corresponding in shape. For example, when the substrate is circular, the housing 11 will also correspond to a bottom surface having a circular shape that is sized appropriately. The bottom surface of the housing 11 also serves as the bottom surface of the gas diffusion chamber 13. The gas inlet 14 is provided in the housing 11 in communication with the gas diffusion chamber 13.
Each of the gas homogenizing pipes 12 may be vertically disposed on the bottom surface of the gas diffusion chamber 13, and an array of the gas homogenizing pipes 12 may be formed according to a certain rule. For example, each of the gas homogenizing pipes 12 in the array of gas homogenizing pipes 12 may be uniformly distributed on the bottom surface of the gas diffusion chamber 13 in a centrosymmetric manner; alternatively, the gas homogenizing pipes 12 in the array of gas homogenizing pipes 12 may be arranged in rows and columns and uniformly distributed on the bottom surface of the gas diffusion chamber 13. Other suitable forms of arrays of chimneys 12 may be formed.
Please refer to fig. 1. The gas inlet 14 may be provided on the top surface of the gas diffusion chamber 13 and may protrude from the top surface of the housing 11; also, the air inlet 14 may be positioned relatively above the array of air distribution tubes 12. The gas inlet 14 may be provided in one or more of the gas diffusion chambers 13.
The bottom of the gas diffusion chamber 13 is provided with a plurality of spray ports 17 which are communicated with the reaction chamber. The spraying ports 17 are communicated with the air homogenizing pipes 12 one by one, so that the lower ends of the air homogenizing pipes 12 can be communicated with the reaction chamber through the corresponding spraying ports 17. In some embodiments, the gas homogenizing pipe 12 is welded to the bottom of the gas diffusion chamber 13 in a one-to-one correspondence with the spray ports 17, so as to be communicated with the spray ports 17.
Since the gas pressure in the gas diffusion chamber 13 is lower at the position far from the gas inlet 14 than at the position near the gas inlet 14, it is necessary to adjust the flow resistance of the gas homogenizing pipe 12 so that the flow resistance of the gas homogenizing pipe 12 near the gas inlet 14 is larger than the flow resistance of the gas homogenizing pipe 12 far from the gas inlet 14, and more preferably, the flow resistance of the gas homogenizing pipe 12 is made to decrease in the direction near the gas inlet 14 to the direction far from the gas inlet 14, so that the resistance of the reaction gas flowing through the gas homogenizing pipe 12 provided near the gas inlet 14 is larger than the resistance of the reaction gas flowing through the gas homogenizing pipe 12 provided far from the gas inlet 14, and the uniformity of the reaction gas flowing into the reaction chamber is improved.
Referring to fig. 1-2, a plurality of air inlets 16 may be axially disposed on a sidewall of the air homogenizing pipe 12, each air inlet 16 is communicated with the inside of the air homogenizing pipe 12, and a flow resistance adjusting plug 15 is hermetically inserted into the air homogenizing pipe 12 from an upper end of the air homogenizing pipe 12. Since the upper end of the gas homogenizing pipe 12 is sealed by the flow resistance regulating plug 15, the reaction gas introduced into the gas diffusion chamber 13 from the gas inlet 14 is diffused into the whole chamber of the gas diffusion chamber 13 under the pressure, and enters the gas homogenizing pipe 12 through the gas inlet 16 provided on the gas homogenizing pipe 12, so that the reaction gas can be discharged from the housing 11 (gas shower head 10) through the shower port 17 and enter the reaction chamber.
In this embodiment, the flow resistance adjusting plug 15 may be inserted into the gas homogenizing pipe 12 in a manner of forming a dynamic seal with the pipe wall of the gas homogenizing pipe 12. The flow resistance of the air homogenizing pipe 12 can be adjusted by moving the flow resistance adjusting plug 15 up and down in the air homogenizing pipe 12 to adjust the number of air inlets 16 on the side wall of the air homogenizing pipe 12 which are not blocked by the flow resistance adjusting plug 15. Wherein, by making the flow resistance adjusting plug 15 move downwards, more air inlets 16 on the side wall of the air homogenizing pipe 12 are blocked so as to increase the flow resistance of the air homogenizing pipe 12; conversely, more air inlets 16 can be exposed on the side wall of the air homogenizing pipe 12 by moving the flow resistance adjusting plug 15 upwards, so as to reduce the flow resistance of the air homogenizing pipe 12, i.e. the flow resistance of the air homogenizing pipe 12 is inversely proportional to the number of air inlets 16 on the air homogenizing pipe 12 which are not plugged by the flow resistance adjusting plug 15.
In some embodiments, the flow resistance adjustment plugs 15 are adjusted such that the number of air inlets 16 on the gas homogenizing pipe 12 near the gas inlet 14 that are not blocked by the flow resistance adjustment plugs 15 is smaller than the number of air inlets 16 on the gas homogenizing pipe 12 far from the gas inlet 14 that are not blocked by the flow resistance adjustment plugs 15, so that the resistance of the reaction gas flowing through the gas homogenizing pipe 12 near the gas inlet 14 is greater than the resistance of the reaction gas flowing through the gas homogenizing pipe 12 far from the gas inlet 14, and the uniformity of the reaction gas flowing into the reaction chamber is improved. Specifically, by adjusting the up-down positions of the flow resistance adjusting plugs 15 in the air homogenizing pipe 12, the air homogenizing pipe 12 closest to the air inlet 14 has the least number of air inlets 16 not blocked by the flow resistance adjusting plugs 15, and the air homogenizing pipe 12 farthest from the air inlet 14 has the most number of air inlets 16 not blocked by the flow resistance adjusting plugs 15, and each air homogenizing pipe 12 between the two has the sequentially increasing number of air inlets 16 not blocked by the flow resistance adjusting plugs 15. In this way, the flow resistance of the gas in each of the gas distribution pipes 12 can be decreased in a direction approaching the gas inlet 14 to a direction separating from the gas inlet 14, so that the flow rate of the reaction gas finally discharged from each of the shower ports 17 can be made uniform. Thus, by adjusting the flow resistance of the pipe through which the gas introduced into the gas diffusion chamber 13 flows by the flow resistance adjustment plug 15 and the gas inlet hole 16, the flow rate of the gas introduced into the bottom surface of the gas diffusion chamber 13 by each gas diffusion chamber 12 can be made uniform.
In some embodiments, the flow resistance adjustment plug 15 may include a screw 151 penetrating the gas homogenizing pipe 12 for blocking the gas inlet hole 16, and a nut 152 engaged with the screw 151. The nut 152 is disposed at the upper end of the air homogenizing pipe 12 and is used for blocking the upper end of the air homogenizing pipe 12, the screw 151 is disposed in the nut 152 and the air homogenizing pipe 12 in a penetrating manner, so that a dynamic seal fit can be formed with the air homogenizing pipe 12, and the up-down moving position of the air homogenizing pipe 12 can be adjusted by rotating the screw 151, so that the number of air inlets 16 on the air homogenizing pipe 12 which are not blocked by the flow resistance adjusting plug 15 can be adjusted according to process requirements.
In this embodiment, the number of the air inlets 14 is one to a plurality. When the number of the air inlets 14 is one, each air homogenizing pipe 12 can form an air homogenizing pipe area, and the air flow resistance in each air homogenizing pipe 12 can be reduced along the direction approaching to the air inlets 14 and away from the air inlets 14 by adjusting the flow resistance adjusting plugs 15.
In some embodiments, when the number of the gas inlets 14 is plural, the plural gas inlets 14 are disposed on the top surface of the gas diffusion chamber 13 and are located above the gas homogenizing pipe 12, each gas inlet 14 corresponds to plural gas homogenizing pipe areas, each gas homogenizing pipe area is a circular area projected on the bottom surface of the gas diffusion chamber 13 with a radius R about a center point of the corresponding gas inlet 14 as a center, and each circular area is not overlapped with each other, where R/4 is equal to or less than R/2, and R is an equivalent radius of the gas shower head. In some embodiments, the equivalent radius of the gas showerhead is the radius of the bottom surface of the gas diffusion chamber 13. When a plurality of gas inlets 14 are arranged on the top surface of the gas diffusion chamber 13, the plurality of gas inlets 14 may be uniformly distributed on the top surface of the gas diffusion chamber 13, for example, the plurality of gas inlets 14 are uniformly distributed on the top surface of the gas diffusion chamber 13 around the central axis of the gas diffusion chamber 13; in other embodiments, at least 2 of the plurality of gas inlets 14 are evenly distributed over the gas diffusion chamber 13 about a central axis of the gas diffusion chamber 13; in still other embodiments, the plurality of gas inlets 14 are irregularly distributed on the top surface of the gas diffusion chamber 13, depending on the actual process.
3-4, the number of the gas inlets 14 is 4, including the gas inlets 141-144, which are uniformly arranged on the top surface of the gas diffusion chamber 13 (i.e., the top surface of the housing 11), and the 4 gas inlets 141-144 correspond to the 4 first uniform gas pipe areas A1-A4. The gas inlet 141 corresponds to a first gas homogenizing pipe area A1, the first gas homogenizing pipe area A1 is a circular area projected on the bottom surface of the gas diffusion chamber 13 by taking a center point of the gas inlet 141 as a center and a radius r, the gas inlet 142 corresponds to a first gas homogenizing pipe area A2, the first gas homogenizing pipe area A2 is a circular area projected on the bottom surface of the gas diffusion chamber 13 by taking a center point of the gas inlet 142 as a center and a radius r, the gas inlet 143 corresponds to a first gas homogenizing pipe area A3, the first gas homogenizing pipe area A3 is a circular area projected on the bottom surface of the gas diffusion chamber 13 by taking a center point of the gas inlet 143 as a center and a radius r, the gas inlet 144 corresponds to a first gas homogenizing pipe area A4, and the first gas homogenizing pipe area A4 is a circular area projected on the bottom surface of the gas diffusion chamber 13 by taking a center point of the gas inlet 144 as a center and a radius r. The first gas homogenizing pipe areas A1-A4 are not overlapped with each other, wherein R/4 is less than or equal to R and less than R/2, and R is the equivalent radius of the gas spray header. Each first homogenizing zone comprises a plurality of homogenizing tubes 12, and regions not in the circular region (as illustrated by the regions B1-B5) also comprise a plurality of homogenizing tubes 12. In some embodiments, the equivalent radius of the gas showerhead is the radius of the bottom surface of the gas diffusion chamber 13.
The flow resistance adjusting plugs 15 are adjusted to adjust the number of the air inlets 16 which are not blocked by the flow resistance adjusting plugs 15 on the air homogenizing pipe 12, so that the number of the air inlets 16 which are not blocked by the flow resistance adjusting plugs 15 on the air homogenizing pipe 12 is increased by a first slope k1 along the radial direction of the center of the circular area to the edge on any radius in each circular area, and the number of the air inlets 16 which are not blocked by the flow resistance adjusting plugs 15 on the air homogenizing pipe 12 at the position covered by the circular area and the position at the most edge of the circular area are adjusted to be the same, so that the flow resistance of the air homogenizing pipe 12 which is not in the circular area is adjusted to be the same as the flow resistance of the air homogenizing pipe 12 at the most edge of the circular area. In some embodiments, the first slope k1 satisfies 0 < k1 < H/r, where 0 < H, H is the height of the gas diffusion chamber.
It will be appreciated that the gas flow resistance of the gas distribution pipe 12 at the extreme edge of any one of the first gas distribution pipe regions is relatively minimum, and the gas flow resistance of the gas distribution pipe 12 between any two adjacent first gas distribution pipe regions is the same as the gas flow resistance of the gas distribution pipe 12 at the extreme edge of the first gas distribution pipe region and is also relatively minimum (for example, the number of gas inlet holes 16 on the gas distribution pipe 12 not blocked by the flow resistance adjustment plug 15 is the greatest here, as shown in fig. 1).
Referring to fig. 4, taking the case that the gas inlet 141 corresponds to the first uniform gas pipe area A1 as an example, in a radial direction from a projection O1 of a center point of the gas inlet 141 on the bottom surface of the gas diffusion chamber 13 to an edge of the first uniform gas pipe area A1, the number of the gas inlets 16 on the uniform gas pipe 12 in the first uniform gas pipe area A1, which are not blocked by the flow resistance adjusting plug 15, is gradually increased, so that the flow resistance of the uniform gas pipe 12 is gradually reduced. In an extreme case, it may be assumed that the air inlet holes 16 on the air homogenizing pipe 12 at the point O1 are all blocked by the flow resistance adjusting plug 15, so that the flow resistance of the air homogenizing pipe 12 is at a maximum, which is equivalent to that the length of the portion of the air homogenizing pipe 12 occupied by the air inlet holes 16 on the air homogenizing pipe 12 which is not blocked by the flow resistance adjusting plug 15 is at a minimum 0, and that the air inlet holes 16 on the air homogenizing pipe 12 are all exposed at the very edge, so that the flow resistance of the air homogenizing pipe 12 is at a minimum, and that the length of the portion of the air homogenizing pipe 12 occupied by the air inlet holes 16 on the air homogenizing pipe 12 which is not blocked by the flow resistance adjusting plug 15 is at a minimum H (which is equivalent to that of the air homogenizing pipe 12 at the very edge), so that the maximum first slope H/r can be calculated, wherein 0 < H (the longest length of the air homogenizing pipe 12 is smaller than the height H of the air diffusion chamber 13). However, the air intake holes 16 on the air homogenizing pipe 12 at the point O1 that are not blocked by the flow resistance adjustment plug 15 cannot be 0, and therefore, in the radial direction from the point O1 toward the edge of the first air homogenizing pipe region A1, the number of air intake holes 16 on the air homogenizing pipe 12 in the first air homogenizing pipe region A1 that are not blocked by the flow resistance adjustment plug 15 may be increased by any slope between 0 < k1 < h/r.
The other first uniform gas pipe areas A2-A4 are similar to the first uniform gas pipe area A1, and will not be described again here. In order to avoid abrupt changes in the flow resistance of the air distribution pipe 12 at the boundary, the air flow is not uniform, and therefore, the number of air intake holes 16 not blocked by the flow resistance adjustment plugs 15 on the plurality of air distribution pipes 12 in the region of the circular region (as illustrated in the region of the reference marks B1 to B5) is adjusted to be the same as that at the extreme edge of the circular region.
In other embodiments, when the number of the gas inlets 14 is plural, the plural gas inlets 14 are disposed on the side surface of the gas diffusion chamber 13 and are located opposite to the outer side of the gas homogenizing pipe 12, each gas inlet 14 corresponds to plural gas homogenizing pipe areas, each gas homogenizing pipe area is an area where a first circle projected on the bottom surface of the gas diffusion chamber 13 with a radius R intersects with the bottom surface of the gas diffusion chamber 13 with a center point of the corresponding gas inlet 14 as a center, and each intersecting area is not overlapped with each other, where R/4 is equal to or less than R/2, and R is an equivalent radius of the gas shower head. In some embodiments, the equivalent radius of the gas showerhead is the radius of the bottom surface of the gas diffusion chamber 13. When a plurality of gas inlets 14 are arranged on the side surface of the gas diffusion chamber 13, the plurality of gas inlets 14 may be uniformly distributed on the side surface of the gas diffusion chamber 13, for example, the plurality of gas inlets 14 are positioned on the same horizontal plane on the side surface of the gas diffusion chamber 13 and uniformly distributed around the central axis of the gas diffusion chamber 13; in other embodiments, at least 2 of the plurality of gas inlets 14 are located at the same level on the side of the gas diffusion chamber 13 and are uniformly distributed around the central axis of the gas diffusion chamber 13; in still other embodiments, the plurality of gas inlets 14 are irregularly distributed on the side of the gas diffusion chamber 13, depending on the actual process.
For example, referring to fig. 5 to 6, the number of the gas inlets 14 is 4, including the gas inlets 141'-144', which are uniformly arranged on the side of the gas diffusion chamber 13 (i.e., the side of the housing 11), and the 4 gas inlets 141'-144' correspond to the 4 second gas distribution areas A1'-A4'. The gas inlet 141 'corresponds to a second gas homogenizing pipe area A1', and the second gas homogenizing pipe area A1 'is a region where a first circle c1 projected on the bottom surface of the gas diffusion chamber 13 with a radius r with respect to a center point of the corresponding gas inlet 141' intersects with the bottom surface of the gas diffusion chamber 13, as shown by a hatched area in fig. 6; the gas inlet 142 'corresponds to a second gas homogenizing pipe area A2', and the second gas homogenizing pipe area A2 'is an area where a first circle c2 projected on the bottom surface of the gas diffusion chamber 13 with a radius r with the center point of the corresponding gas inlet 142' as a center intersects with the bottom surface of the gas diffusion chamber 13; the gas inlet 143 'corresponds to a second gas homogenizing pipe area A3', and the second gas homogenizing pipe area A3 'is a region where a first circle c3 projected on the bottom surface of the gas diffusion chamber 13 with a radius r with respect to a center point of the corresponding gas inlet 143' intersects with the bottom surface of the gas diffusion chamber 13; the gas inlet 144 'corresponds to a second gas homogenizing pipe area A4', and the second gas homogenizing pipe area A4 'is an area where a first circle c4 projected on the bottom surface of the gas diffusion chamber 13 with a radius r with respect to a center point of the corresponding gas inlet 144' intersects with the bottom surface of the gas diffusion chamber 13. The second even gas pipe areas A1'-A4' are not overlapped with each other, wherein R/4 is more than or equal to R and less than R/2, and R is the equivalent radius of the gas spray header. In some embodiments, the equivalent radius of the gas showerhead is the radius of the bottom surface of the gas diffusion chamber 13. Each second homogenizing zone includes a plurality of homogenizing tubes 12 therein, and regions not within the intersecting region (as illustrated by the regions B1 '-B5') also include a plurality of homogenizing tubes 12.
The second circle projected on the bottom surface of the gas diffusion chamber 13 with the center point of the corresponding gas inlet 14 as the center and the radius L intersects with the intersecting area, the number of the gas inlets 16 on the gas homogenizing pipe 12 which are not blocked by the flow resistance adjusting plugs 15 is adjusted to be the same, the number of the gas inlets 16 on the gas homogenizing pipe 12 which are not blocked by the flow resistance adjusting plugs 15 on the arc is the same, with the increase of L, the number of the gas inlets 16 on the arc which are not blocked by the flow resistance adjusting plugs 15 is increased by a second slope k2, the number of the gas inlets 16 on the gas homogenizing pipe 12 which are not blocked by the flow resistance adjusting plugs 15 on the outermost edge of the intersecting area is adjusted to be the same, wherein the projection of the center point of the corresponding gas inlet 14 on the bottom surface of the gas diffusion chamber 13 is defined as an O point, the arc is not passing through the O point, and L is the radial distance r between the O point and the bottom surface 13 and any point on the bottom surface of the gas diffusion chamber is equal to or less than or equal to 0.
It will be appreciated that the gas flow resistance of the gas homogenizing pipe 12 at the most edge of any one of the second gas homogenizing pipe regions, i.e. the arc line which does not pass through the O-point at the intersection of the corresponding first circle and the corresponding intersection region, is relatively minimum, and the gas flow resistance of the gas homogenizing pipe 12 between any two adjacent second gas homogenizing pipe regions is also relatively minimum as is the gas flow resistance of the gas homogenizing pipe 12 at the most edge (e.g. the number of gas inlet holes 16 on the gas homogenizing pipe 12 which are not blocked by the flow resistance regulating plugs 15 is the greatest).
Referring to fig. 6 to fig. 7, taking an example that the air inlet 141 'corresponds to the second uniform air pipe area A1', the projection of the center point of the air inlet 141 'on the bottom surface of the air diffusion chamber 13 is an O1' point, the distance between any point M on the line O1'N between the O1' point and the center point N of the bottom surface of the air diffusion chamber 13 and the O1 'point is L, where 0 is less than or equal to L is less than or equal to r, a second circle is formed on the bottom surface of the air diffusion chamber 13 by taking the O1' point as the center and the radius is L, and the second circle intersects with the second uniform air pipe area A1 'and forms an arc line P1P2 that does not pass through the O1' point, the flow resistance adjusting plug 15 is adjusted, so that the number of air inlet holes 16 on the uniform air pipes 12 at the point is the same and the flow resistance adjusting plug 15 is the same on the arc line P1P 2. As the point M is far from the point O1', the number of air inlets 16 on the corresponding air homogenizing pipe 12 on the arc line, which are not blocked by the flow resistance adjusting plug 15, increases gradually with the second slope k2, so that the flow resistance of the corresponding air homogenizing pipe 12 on the arc line gradually decreases. In the extreme case, it may be assumed that the air inlet holes 16 on the air homogenizing pipe 12 at the O1 'point are all blocked by the flow resistance adjusting plug 15, so that the flow resistance of the air homogenizing pipe 12 is at a maximum, which is equivalent to the length of the portion of the air homogenizing pipe 12 occupied by the air inlet holes 16 on the air homogenizing pipe 12 not blocked by the flow resistance adjusting plug 15 being at a minimum of 0, and at the edge M' (i.e., the portion of the second air homogenizing pipe area A1 'farthest from the O1' point on the connecting line O1'N, the distance r from the O1' point is at a distance r) the air inlet holes 16 on the air homogenizing pipe 12 are all exposed, so that the flow resistance of the air homogenizing pipe 12 is at a minimum, and the length of the portion of the air homogenizing pipe 12 not occupied by the flow resistance adjusting plug 15 is at a minimum (which is equivalent to the length of the air homogenizing pipe 12 at a minimum), so that the maximum second slope H/r can be calculated, where 0 < H (the length of the longest air homogenizing pipe 12 is smaller than the height H of the air diffusion chamber 13). However, the air intake holes 16 on the air homogenizing pipe 12 at the point O1' which are not blocked by the flow resistance regulating plugs 15 cannot be 0, and therefore, as L increases, the number of air intake holes 16 on the air homogenizing pipe 12 on the corresponding arc which are not blocked by the flow resistance regulating plugs 15 may be increased by any slope between 0 < k2 < h/r.
The other second uniform gas pipe areas A2' -A4' are similar to the second uniform gas pipe area A1', and will not be described again here. In order to avoid abrupt changes in the flow resistance of the air distribution pipes 12 at the boundary, the flow is not uniform, and therefore, the number of air intake holes 16 not blocked by the flow resistance adjustment plugs 15 on the plurality of air distribution pipes 12 in the intersecting region (as illustrated in the region of the reference marks B1 '-B5') is adjusted to be the same as that at the extreme edge of the intersecting region (as illustrated in the region of the reference marks A1 '-A4').
It should be noted that, in the above embodiment, the number of the air inlets 14 is 4, but the air inlets in the embodiment of the present invention are not limited to 4, so long as the number of the air inlets of each gas diffusion chamber is greater than or equal to 2, the present invention is applicable to partition arrangement and flow resistance adjustment of the gas homogenizing pipe in the gas diffusion chamber.
In some embodiments, a gas homogenizing ring 18 is further disposed in the gas diffusion chamber 13, see fig. 8. The gas homogenizing ring 18 is disposed in the gas diffusion chamber 13 and surrounds between the outer side of all the gas homogenizing pipes 12 in the gas diffusion chamber 13 and the side wall of the gas diffusion chamber 13, so that the gas can be diffused circumferentially along the gas homogenizing ring 18 after entering the gas diffusion chamber 13 from the gas inlet 14. The number of the gas equalizing rings 18 is one to a plurality. The central axis of each gas distributing ring 18 coincides with the central axis of the gas diffusion chamber 13. When the number of the gas distribution rings 18 is plural, the height of the gas distribution ring 18 positioned at the inner ring is not lower than the height of the gas distribution ring 18 positioned at the outer ring.
In some embodiments, the height of the gas homogenizing ring 18 is equal to or greater than H/2H, which is the height of the gas diffusion chamber 13. The height of the gas homogenizing pipe 12 is generally not lower than the height of the gas homogenizing ring 18, so that the reaction gas can be further blocked to be more favorable for gas diffusion.
Referring to fig. 9-10, fig. 9 is a schematic structural diagram of a gas shower head according to a second preferred embodiment of the invention, and fig. 10 is an enlarged schematic partial structural diagram of the gas shower head in fig. 9. As shown in fig. 9 to 10, a plurality of gas diffusion chambers 13 may be provided in the housing 11 of the gas shower head 10; the gas diffusion chambers 13 may be stacked one above the other to form a stacked structure, and the gas diffusion chambers 13 are isolated from each other. In some embodiments, two adjacent gas diffusion chambers may be separated by a separator 19 to form two gas diffusion chambers 13 that are isolated from each other.
Each gas diffusion chamber 13 may be provided with one to a plurality of gas inlets 14. Wherein the gas inlet 14 on one gas diffusion chamber 13 at the uppermost layer may be provided on the top surface of the housing 11 (gas diffusion chamber 13); the gas inlets 14 located on the respective gas diffusion chambers 13 of the lower layer may be provided on the side of the housing 11 (gas diffusion chamber 13). In this way, different reactive gases can be introduced into the respective gas diffusion chambers 13 through different gas inlets 14. The gas homogenizing pipes 12 in the gas diffusion chambers 13 on the upper layer of the gas diffusion chamber 13 on the lowest layer respectively penetrate downwards to the bottom surface of the gas diffusion chamber 13 on the lowest layer in an isolated manner, are also isolated from the gas homogenizing pipes 12 in the gas diffusion chamber 13 on the lowest layer, and finally are communicated with the gas spray header 10 together through the spray ports 17 respectively corresponding to and arranged on the bottom surface of the shell 11.
In the following, two gas diffusion chambers 13 stacked one above the other are provided in the housing 11 of the gas shower head 10.
Please refer to fig. 9-11. The gas shower head 10 includes a first gas diffusion chamber 131 and a second gas diffusion chamber 132 disposed one above the other. A plurality of first gas inlets (141, 142,143, 144) are disposed on the top surface of the first gas diffusion chamber 131 for inputting the first reaction gas into the first gas diffusion chamber 131, and a plurality of second gas inlets (141 ',142',143', 144') are disposed on the side surface of the second gas diffusion chamber 132 for inputting the second reaction gas into the second gas diffusion chamber 132. Illustratively, for a gas showerhead 10 applied to a nitride MOCVD apparatus, the first reactant gas comprises a Hydride, such as NH 3 The second reactionThe gas includes a metal organic source such as TMGa. In some embodiments, the plurality of first gas inlets may be uniformly distributed over the top surface of the first gas diffusion chamber 131, for example, the plurality of first gas inlets may be uniformly distributed over the top surface of the first gas diffusion chamber 131 about the central axis of the first gas diffusion chamber 131; in other embodiments, at least 2 of the plurality of first gas inlets are evenly distributed over the first gas diffusion chamber 131 about a central axis of the first gas diffusion chamber 131; in still other embodiments, the plurality of first gas inlets are irregularly distributed on the top surface of the first gas diffusion chamber 131, particularly according to actual processes. Also, in some embodiments, the plurality of second gas inlets may be uniformly distributed on the side of the second gas diffusion chamber 132, e.g., the plurality of second gas inlets may be in the same horizontal plane on the side of the second gas diffusion chamber 132 and uniformly distributed about the central axis of the second gas diffusion chamber 132; in other embodiments, at least 2 of the plurality of second gas inlets are located at the same level on the side of the second gas diffusion chamber 132 and are uniformly distributed about the central axis of the second gas diffusion chamber 132; in still other embodiments, the plurality of second gas inlets are irregularly distributed on the side of the second gas diffusion chamber 132, depending on the actual process.
Wherein, a plurality of first spray ports 171 and a plurality of second spray ports 172 communicating with the reaction chamber are provided at the bottom of the second gas diffusion chamber 132 (the bottom of the housing 11). The first gas diffusion chamber 131 and the second gas diffusion chamber 132 may be separated by a separator 19 to form two gas diffusion chambers 13 isolated from each other. The gas homogenizing pipe 12 may include a plurality of first gas homogenizing pipes 121 provided in a first gas diffusion chamber 131, and a plurality of second gas homogenizing pipes 122 provided in a second gas diffusion chamber 132. The lower end of the first gas homogenizing pipe 121 may penetrate downward from the partition 19 located on the bottom surface of the first gas diffusion chamber 131 to the second gas diffusion chamber 132, and communicate with the first spraying port 171 located on the bottom of the second gas diffusion chamber 132, respectively, to input the first reaction gas into the reaction chamber. The second gas homogenizing pipe 122 is isolated from the first gas homogenizing pipe 121 and communicates with the second shower port 172 to input the second reaction gas into the reaction chamber.
The gas homogenizing ring 18 may be provided in at least one of the first gas diffusion chamber 131 and the second gas diffusion chamber 132 (fig. 9 to 10 show only the feature when the gas homogenizing ring 18 is provided in the second gas diffusion chamber 132).
The side wall of the first air homogenizing pipe 121 and/or the second air homogenizing pipe 122 is provided with an air inlet hole 16. A flow resistance adjusting plug 15 (not shown) for adjusting the flow resistance of the air homogenizing pipe 12 is provided in the air homogenizing pipe 12 having an air inlet hole 16 provided in a side wall thereof. To avoid too dense details, fig. 9-10 only show the partial features of the first gas homogenizing pipe 121 located in the second gas diffusion chamber 132 from below the partition 19, and the partial features of the second gas homogenizing pipe 122 located on the bottom surface of the second gas diffusion chamber 132 (i.e., the bottom inner wall of the housing 11), the lower end orifice of the first gas homogenizing pipe 121 is integrally connected with the first shower port 171, and the lower end orifice of the second gas homogenizing pipe 122 is integrally connected with the second shower port 172.
When the uniformity of the first reaction gas conveyed into the reaction chamber needs to be regulated, a plurality of air inlets 16 are arranged on the side wall of the first uniform gas pipe 121, the flow resistance regulating plugs 15 are hermetically penetrated into the first uniform gas pipe 121 from the upper end, and the number of the air inlets 16 which are not blocked by the flow resistance regulating plugs 15 on the first uniform gas pipe 121 is regulated by enabling the flow resistance regulating plugs 15 to move up and down in the first uniform gas pipe 121, so that the flow resistance of the first uniform gas pipe 12 is regulated. When the uniformity of the second reaction gas conveyed into the reaction chamber needs to be regulated, a plurality of air inlets 16 are arranged on the side wall of the second uniform gas pipe 122, the flow resistance regulating plugs 15 are hermetically penetrated into the second uniform gas pipe 122 from the upper end, and the number of the air inlets 16 which are not blocked by the flow resistance regulating plugs 15 on the second uniform gas pipe 122 is regulated by enabling the flow resistance regulating plugs 15 to move up and down in the second uniform gas pipe 122, so that the flow resistance of the second uniform gas pipe 122 is regulated. The structure of the flow resistance adjusting plug 15 and the flow resistance adjusting method thereof can be specifically referred to the gas shower head described in the first embodiment.
In some embodiments, each of the first gas inlets corresponds to a plurality of first gas distribution areas, each of the second gas inlets corresponds to a plurality of second gas distribution areas, and for example, the following description will be given by taking the example of disposing 4 first gas inlets 141-144 on the top surface of the first gas diffusion chamber 131 and disposing 4 second gas inlets 141'-144' on the side surface of the second gas diffusion chamber 132, but the first gas inlets and the second gas inlets in the embodiments of the present invention are not limited to 4, as long as the number of gas inlets of each gas diffusion chamber is greater than or equal to 2, and each gas inlet is suitable for partition arrangement and flow resistance adjustment of the gas distribution pipes in the gas diffusion chamber accordingly.
Referring to fig. 3-4, 4 first air inlets 141-144 correspond to 4 first air homogenizing pipe areas A1-A4, that is, the first air inlet 141 corresponds to a first air homogenizing pipe area A1, the first air homogenizing pipe area A1 is a circular area projected on the bottom surface of the first air diffusing chamber 131 with the center point of the first air inlet 141 as the center and the radius r1, the first air inlet 142 corresponds to a first air homogenizing pipe area A2, the first air homogenizing pipe area A2 is a circular area projected on the bottom surface of the first air diffusing chamber 131 with the center point of the first air inlet 142 as the center and the radius r1, the first air inlet 143 corresponds to a first air homogenizing pipe area A3, the first air homogenizing pipe area A3 is a circular area projected on the bottom surface of the first air diffusing chamber 131 with the center point of the first air inlet 143 as the center and the radius r1, the first air inlet 144 corresponds to A4, and the first air inlet 142 is a circular area projected on the bottom surface of the first air diffusing chamber 131 with the center point of the first air inlet 144 as the center and the radius r 1. The first gas homogenizing pipe areas A1-A4 are not overlapped with each other, wherein R/4 is more than or equal to R1 and less than R/2, and R is the equivalent radius of the gas spray header. In some embodiments, the equivalent radius of the gas showerhead is the radius of the bottom surface of the first gas diffusion chamber 131. Each of the first gas distribution pipe sections includes a plurality of first gas distribution pipes 121 therein, and the region not in the circular region also includes a plurality of first gas distribution pipes 121.
Further, by moving the flow resistance adjustment plug 15 up and down in the first air homogenizing pipe 121, the number of the air intake holes 16 in the first air homogenizing pipe 121 which are not blocked by the flow resistance adjustment plug 15 in the radial direction of the center-directed edge of the circular area is gradually increased at a first slope k1 on any radius in each of the circular areas, and the number of the air intake holes 16 in the first air homogenizing pipe 121 which are not blocked by the flow resistance adjustment plug 15 in the first air homogenizing pipe 121 in the circular area and the first air homogenizing pipe 121 at the most edge of the circular area are adjusted to be the same. In some embodiments, the first slope k1 satisfies 0 < k1 < H/r1, where 0 < H1, H1 is the height of the first gas diffusion chamber 131. (please refer to the previous embodiments corresponding to fig. 3-4 for understanding).
Referring to fig. 5-6, the 4 second gas inlets 141'-144' correspond to the 4 second gas distribution areas A1'-A4', that is, the second gas inlet 141 'corresponds to the second gas distribution area A1', the second gas inlet 143 'corresponds to the second gas distribution area A3' with the center point of the corresponding second gas inlet 141 'as the center, the area where the first circle c1 projected on the bottom surface of the second gas diffusion chamber 132 with the radius r2 intersects with the bottom surface of the second gas diffusion chamber 132, the second gas inlet 142' corresponds to the second gas distribution area A2', the second gas distribution area A2' corresponds to the area where the first circle c2 projected on the bottom surface of the second gas diffusion chamber 132 with the radius r2 intersects with the bottom surface of the second gas diffusion chamber 132 with the center point of the second gas distribution area A3 'as the center, the second gas distribution area A3' with the radius r2 as the center, the area where the first circle c2 projected on the bottom surface of the second gas diffusion chamber 132 with the radius r2 intersects with the bottom surface of the second gas distribution area A4 'as the center, and the area where the second circle c2 projected on the bottom surface of the second gas diffusion chamber 132 with the bottom surface of the second gas distribution area A4' as the center. The second even gas pipe areas A1'-A4' are not overlapped with each other, wherein R/4 is more than or equal to R2 and less than R/2, and R is the equivalent radius of the gas spray header. In some embodiments, the equivalent radius of the gas showerhead is the radius of the bottom surface of the second gas diffusion chamber 132. Each of the second uniform gas pipe regions includes a plurality of second uniform gas pipes 122 therein, and the region not within the intersecting region also includes a plurality of second uniform gas pipes 122.
Further, a second circle projected on the bottom surface of the second gas diffusion chamber 132 with a radius L centered on the respective center points of the corresponding 4 second gas inlets 141'-144' intersects with the corresponding intersecting region on an arc line, the number of the gas inlets 16 not blocked by the flow resistance adjustment plug 15 in the second gas homogenizing pipe 122 on the arc line is made the same by moving the flow resistance adjustment plug 15 in the second gas homogenizing pipe 122, and as L increases, the number of the gas inlets 16 not blocked by the flow resistance adjustment plug 15 in the corresponding second gas homogenizing pipe 122 on the arc line is gradually increased with a second slope k2, and the number of the gas inlets 16 not blocked by the flow resistance adjustment plug 15 in the second gas homogenizing pipe 122 in the intersecting region is adjusted to be the same as the number of the gas inlets 16 not blocked by the flow resistance adjustment plug 15 in the second gas homogenizing pipe 122 at the most edge of the intersecting region. Wherein, the projection of the center point of the second gas inlet on the bottom surface of the second gas diffusion chamber 132 is defined as an O point, the arc does not pass through the O point, and L is the radial distance between any point on the connecting line between the O point and the center point of the bottom surface of the second gas diffusion chamber 132 and the O point, and L is greater than or equal to 0 and less than or equal to r2. In some embodiments, the second slope k2 satisfies 0 < k2 < H/r2, where 0 < H2, H2 is the height of the second gas diffusion chamber (please understand with reference to the previous embodiments corresponding to fig. 5-7).
Referring to fig. 12 in combination with fig. 1-11, fig. 12 is a schematic view illustrating an arrangement structure of a gas shower head on a chemical vapor deposition apparatus according to a preferred embodiment of the invention. As shown in fig. 12, a chemical vapor deposition apparatus 20 of the present invention includes a substrate support 22 disposed in a reaction chamber 21 for disposing a substrate 30, and the above-described gas shower head 10. The gas shower head 10 is disposed opposite to the substrate support 22 (for example, the gas shower head 10 is disposed above the substrate support 22) and is configured to uniformly introduce the reaction gas, which is subjected to the flow resistance adjustment by the gas shower head 10, into the reaction chamber 21 to form a film layer having a uniform thickness on the surface of the substrate 30.
In some embodiments, the gas showerhead 10 may have a showerhead bottom surface parallel to and shaped to correspond to the surface of the substrate 30 and the reactant gas may be introduced into the reaction chamber 21 through showerhead ports 17 uniformly distributed on the showerhead bottom surface. For example, the shower bottom surface may be a bottom surface of the housing 11 of the gas shower head 10, and shower openings 17 are provided in the bottom surface of the housing 11.
In some embodiments, the gas shower head 10 may be a gas shower head 10 corresponding to fig. 1 provided with one gas diffusion chamber 13, and may be used to introduce the homogenized reaction gas into the reaction chamber 21 through the homogenizing gas pipe 12. Fig. 12 shows a gas shower head 10 provided with a gas diffusion chamber 13.
In some embodiments, the gas showerhead 10 may be a gas showerhead 10 provided with a plurality of gas diffusion chambers 13, for example, the gas showerhead 10 may be a gas showerhead 10 provided with two gas diffusion chambers 13 corresponding to fig. 9, and may be used to introduce two reaction gases, which are homogenized through the gas homogenizing pipe 12, into the reaction chamber 21 in a spaced apart manner.
In some embodiments, the chemical vapor deposition apparatus 20 may be a Metal Organic Chemical Vapor Deposition (MOCVD) apparatus or the like, and may employ a gas showerhead 10 provided with two gas diffusion chambers 13. A uniform thickness of a film layer may be formed on the surface of the substrate 30 by introducing a uniform gas, such as a Hydride (hydro) source reactant gas, into the reaction chamber 21 through the first gas diffusion chamber 131 located at the upper layer, and introducing a uniform gas, such as a metal organic source reactant gas, into the reaction chamber 21 through the second gas diffusion chamber 132 located at the lower layer.
The invention is applicable to a reaction chamber 21 with larger size, by arranging the gas homogenizing pipe 12 in the gas diffusion chamber 13 of the gas spray header 10, arranging a plurality of gas inlets 16 along the axial direction on the side wall of the gas homogenizing pipe 12, adjusting the number of the gas inlets 16 which are not blocked by the flow resistance adjusting plugs 15 on the gas homogenizing pipe 12 by moving the flow resistance adjusting plugs 15 up and down in the gas homogenizing pipe 12, adjusting the flow resistance of the gas entering the gas homogenizing pipe 12, homogenizing the flow of the gas when the gas is introduced into the reaction chamber 21 by each gas homogenizing pipe 12, and effectively improving the uniformity of the reaction gas during spraying, thereby forming a uniform film layer on the substrate 30. In addition, as the flow resistance in each gas homogenizing pipe 12 through which the reaction gas flows can be independently adjusted, different process requirements can be met without replacing the gas spray header 10, thereby saving the cost.
While embodiments of the present invention have been described in detail hereinabove, it will be apparent to those skilled in the art that various modifications and variations can be made to these embodiments. It is to be understood that such modifications and variations are within the scope and spirit of the present invention as set forth in the following claims. Moreover, the invention described herein is capable of other embodiments and of being practiced or of being carried out in various ways.
Claims (17)
1. A gas shower head for supplying a reaction gas into a reaction chamber, comprising:
an air inlet;
a gas diffusion chamber in communication with the gas inlet;
the gas homogenizing pipes are arranged in the gas diffusion chamber and communicated with the reaction chamber, and a plurality of gas inlets are axially arranged on the side wall of each gas homogenizing pipe;
the flow resistance adjusting plug is arranged in the even air pipe in a sealing penetrating way from the upper end;
the flow resistance adjusting plug moves up and down in the air homogenizing pipe, and the number of air inlets on the air homogenizing pipe, which are not plugged by the flow resistance adjusting plug, is adjusted to adjust the flow resistance of the air homogenizing pipe.
2. The gas shower head of claim 1, wherein the number of the gas inlets not plugged by the flow resistance adjustment plug on the gas distribution pipe near the gas inlet is smaller than the number of the gas inlets not plugged by the flow resistance adjustment plug on the gas distribution pipe far from the gas inlet.
3. The gas shower head according to claim 1, wherein the number of the gas inlets on the gas homogenizing pipe which are not blocked by the flow resistance regulating plug increases in a direction approaching the gas inlet to a direction separating from the gas inlet.
4. The gas shower head according to claim 1, wherein the flow resistance adjusting plug comprises a screw rod and a nut matched with the screw rod, the screw rod is arranged in the nut and the gas homogenizing pipe in a penetrating mode and used for sealing the gas inlet hole, and the nut is arranged at the upper end of the gas homogenizing pipe and used for sealing the upper end of the gas homogenizing pipe.
5. The gas shower head according to claim 1, wherein the plurality of gas inlets are arranged on the top surface of the gas diffusion chamber, each gas inlet corresponds to a plurality of gas homogenizing pipe areas, each gas homogenizing pipe area is a circular area which is projected on the bottom surface of the gas diffusion chamber by taking the center point of the corresponding gas inlet as a circle center and taking the radius as R, and each circular area is not overlapped with each other, wherein R/4 is less than or equal to R/2, and R is the equivalent radius of the gas shower head.
6. The gas shower head according to claim 5, wherein the number of the gas inlets not blocked by the flow resistance adjustment plugs on the gas distribution pipe increases with a first slope k1 in a radial direction of a rim along a center of the circular area on any radius in each circular area, and the number of the gas inlets not blocked by the flow resistance adjustment plugs on the gas distribution pipe at a position where the circular area is covered and a position where the circular area is at an extreme edge is the same.
7. The gas showerhead of claim 6, wherein the first slope k1 satisfies 0 < k1 < H/r, where 0 < H, H being the height of the gas diffusion chamber.
8. The gas shower head according to claim 1, wherein the plurality of gas inlets are arranged on the side surface of the gas diffusion chamber and are positioned on the outer side of the gas homogenizing pipe relatively, each gas inlet corresponds to the plurality of gas homogenizing pipe areas, each gas homogenizing pipe area is a region where a first circle projected on the bottom surface of the gas diffusion chamber with a radius R intersects the bottom surface of the gas diffusion chamber with a center point of the corresponding gas inlet as a circle center, each intersecting region is not overlapped with each other, wherein R/4 is less than or equal to R/2, and R is an equivalent radius of the gas shower head.
9. The gas shower head according to claim 8, wherein a second circle projected on the bottom surface of the gas diffusion chamber with respect to the center point of the gas inlet and having a radius L intersects with the intersecting region on an arc line on which the number of the gas inlets on the gas distribution pipe that are not blocked by the flow resistance adjustment plug is the same, and as L increases, the number of the gas inlets on the gas distribution pipe that are not blocked by the flow resistance adjustment plug on the arc line increases with a second slope k2, and the number of the gas inlets on the gas distribution pipe that are not blocked by the flow resistance adjustment plug at the outermost edge of the intersecting region where the intersecting region is covered by the intersecting region is the same, wherein a projection of the center point of the gas inlet on the bottom surface of the gas diffusion chamber corresponding to the arc line is defined as an O point, the arc line does not pass through the O point, and L is a radial distance between any point on a line between the O point and the center point of the bottom surface of the gas diffusion chamber and the O point, and L is equal to or less than 0.
10. The gas showerhead of claim 9, wherein the second slope k2 satisfies 0 < k2 < H/r, where 0 < H, H being the height of the gas diffusion chamber.
11. The gas showerhead of claim 8, wherein at least one gas distribution ring is disposed in the gas diffusion chamber and surrounds all of the gas distribution tube between an outer side of the gas distribution tube and a sidewall of the gas diffusion chamber.
12. The gas shower head of claim 11, wherein when the number of gas distribution rings is plural, the height of the gas distribution ring positioned at the inner ring is not lower than the height of the gas distribution ring positioned at the outer ring.
13. The gas showerhead of claim 11, wherein the height of the gas homogenizing ring is greater than or equal to H/2, H being the height of the gas diffusion chamber.
14. The gas showerhead of claim 11, wherein the height of the gas distribution ring is no higher than the height of the gas distribution tube.
15. The gas shower head according to claim 1, wherein a plurality of shower openings communicated with the reaction chamber are formed in the bottom of the gas diffusion chamber, and the shower openings are communicated with the bottom ends of the gas homogenizing pipes in a one-to-one correspondence manner.
16. The gas shower head according to claim 1, wherein the gas diffusion chamber includes a first gas diffusion chamber and a second gas diffusion chamber which are stacked, the gas inlet includes a plurality of first gas inlets which are arranged on a top surface of the first gas diffusion chamber and input a first reaction gas into the first gas diffusion chamber, and a plurality of second gas inlets which are arranged on a side surface of the second gas diffusion chamber and input a second reaction gas into the second gas diffusion chamber, a plurality of first shower openings and a plurality of second shower openings which are communicated with the reaction chamber are provided at a bottom of the second gas diffusion chamber, so as to input the first reaction gas and the second reaction gas into the reaction chamber, respectively, the gas homogenizing pipe includes a plurality of first gas homogenizing pipes which are arranged in the first gas diffusion chamber, and a plurality of second gas homogenizing pipes which are arranged in the second gas diffusion chamber, the first gas homogenizing pipes penetrate downwards from the first gas diffusion chamber to the second gas diffusion chamber and are communicated with the first shower openings, the first gas homogenizing pipes are communicated with the second shower openings, and the second shower openings are mutually communicated with the first gas homogenizing pipes.
17. A chemical vapor deposition apparatus comprising a substrate support portion disposed in a reaction chamber for disposing a substrate, and the gas shower head of any one of claims 1 to 16 disposed opposite to the substrate support portion for uniformly introducing a reaction gas, flow resistance of which is regulated by the gas shower head, into the reaction chamber to form a film layer having a uniform thickness on a surface of the substrate.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202310685373.6A CN116716595A (en) | 2023-06-09 | 2023-06-09 | Gas spray head and chemical vapor deposition equipment |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202310685373.6A CN116716595A (en) | 2023-06-09 | 2023-06-09 | Gas spray head and chemical vapor deposition equipment |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117116816A (en) * | 2023-10-24 | 2023-11-24 | 上海谙邦半导体设备有限公司 | Air inlet device and air inlet method |
| CN117612977A (en) * | 2024-01-23 | 2024-02-27 | 上海邦芯半导体科技有限公司 | Air inlet device and air inlet method |
-
2023
- 2023-06-09 CN CN202310685373.6A patent/CN116716595A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117116816A (en) * | 2023-10-24 | 2023-11-24 | 上海谙邦半导体设备有限公司 | Air inlet device and air inlet method |
| CN117116816B (en) * | 2023-10-24 | 2024-01-23 | 上海谙邦半导体设备有限公司 | Air inlet device and air inlet method |
| CN117612977A (en) * | 2024-01-23 | 2024-02-27 | 上海邦芯半导体科技有限公司 | Air inlet device and air inlet method |
| CN117612977B (en) * | 2024-01-23 | 2024-04-05 | 上海邦芯半导体科技有限公司 | Air inlet device and air inlet method |
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