CN116695097A

CN116695097A - Gas homogenizing device and semiconductor process equipment

Info

Publication number: CN116695097A
Application number: CN202310684379.1A
Authority: CN
Inventors: 郑冬; 周慧娟
Original assignee: Chuyun Technology Shaoxing Co ltd
Current assignee: Chuyun Technology Shaoxing Co ltd
Priority date: 2023-06-09
Filing date: 2023-06-09
Publication date: 2023-09-05

Abstract

The invention discloses a gas homogenizing device and semiconductor process equipment, wherein the gas homogenizing device is used for inputting reaction gas into a reaction chamber and comprises the following components: an air inlet; a gas diffusion chamber in communication with the gas inlet; the gas homogenizing pipes are arranged in the gas diffusion chamber and are communicated with the reaction chamber; the flow resistance adjusting mechanism is movably sleeved on at least part of the air homogenizing pipes to adjust the blocking force of the air flowing through the corresponding air homogenizing pipes through axial movement of the corresponding air homogenizing pipes, so that the blocking force of the air is gradually decreased along the direction close to the air inlet and away from the air inlet, the flow of the reaction gas when the air homogenizing pipes are led out of the air homogenizing device is uniform, and the air homogenizing effect is achieved. The semiconductor process equipment using the gas homogenizing device can uniformly guide the reaction gas subjected to flow resistance adjustment by the gas homogenizing device into the reaction chamber, and can form a film layer with uniform thickness on the surface of the substrate.

Description

Gas homogenizing device and semiconductor process equipment

Technical Field

The invention relates to the technical field of semiconductor equipment, in particular to a gas homogenizing device and semiconductor process equipment.

Background

Please refer to fig. 12. A semiconductor processing apparatus (for example, MOCVD apparatus) for forming a film on a substrate (wafer) has a substrate support section 2 in a reaction chamber 1, a substrate 3 is placed on the substrate support section 2, and a gas shower head 4 is provided so as to face the substrate support section 2. The gas shower head 4 is provided with a gas inlet 5, and a reaction gas 6 is introduced into the gas shower head 4 through the gas inlet 5. The bottom of the gas spray header 4 is provided with a spray opening 7, reaction gas enters the gas spray header 4 through the gas inlet 5 and then is introduced into the reaction chamber 1 through the spray opening 7, so that film is formed on the substrate 3, and tail gas is discharged out of the reaction chamber 1 through the gas outlet 8.

With the development of semiconductor technology, the size of the reaction chamber is increasing, and thus the size of the showerhead is also required to be correspondingly increased. When the shower head of the existing semiconductor process equipment is used for dealing with a small-size reaction chamber, the gas homogenizing effect of the shower head on the process gas is relatively uniform. However, when dealing with a large-sized reaction chamber, although the uniformity of the process gas ejected from the gas holes can be improved by adding more gas inlets to the showerhead as the size of the showerhead increases, there is still a problem in that the amount of process gas is small at a position far from the gas inlets because the gas pressure at a position far from the gas inlets is lower than the gas pressure at a position near the gas inlets, resulting in uneven thickness of the thin film formed on the substrate. Particularly, aiming at the supply of metal organic source gas in the MOCVD process, the existing spray header is more difficult to realize homogenization of the metal organic source gas, so that certain influence is brought to the quality of the film forming process.

Disclosure of Invention

The invention aims to overcome the defects in the prior art and provide a novel gas homogenizing device and semiconductor process equipment.

In order to achieve the above purpose, the technical scheme of the invention is as follows:

the invention provides a gas homogenizing device, which is used for inputting reaction gas into a reaction chamber and comprises the following components:

an air inlet;

a gas diffusion chamber in communication with the gas inlet;

the gas homogenizing pipes are arranged in the gas diffusion chamber and are communicated with the reaction chamber;

the flow resistance adjusting mechanism is movably sleeved on at least part of the air homogenizing pipe to adjust the blocking force of the air flowing through the air homogenizing pipe along the axial movement corresponding to the air homogenizing pipe, so that the blocking force of the air is gradually decreased along the direction approaching to the air inlet and away from the air inlet.

Further, the flow resistance adjusting mechanism comprises an inner sleeve which is hermetically and movably arranged in the air homogenizing pipe from the upper end, an air inlet is arranged at the top end of the inner sleeve, and the reaction gas enters the air homogenizing pipe through the air inlet; the flow resistance adjusting mechanism is defined to be in a structure formed by the flow resistance adjusting mechanism and the corresponding air homogenizing pipe, and the air homogenizing pipe without the flow resistance adjusting mechanism is in a flow passage structure.

Further, the height of the inner sleeve arranged on the air homogenizing pipe close to the air inlet, which is exposed out of the upper end of the air homogenizing pipe, is larger than the height of the inner sleeve arranged on the air homogenizing pipe far away from the air inlet, which is exposed out of the upper end of the air homogenizing pipe.

Further, the plurality of gas inlets are arranged on the top surface of the gas diffusion chamber, the gas inlets correspond to a plurality of gas homogenizing areas, each gas homogenizing area is a circular area which is projected on the bottom surface of the gas diffusion chamber by taking the corresponding central point of the gas inlet as the center and the radius R, the circular areas are not overlapped with each other, R is more than or equal to 0.25R and less than 0.5R, and R is the equivalent radius of the gas homogenizing device.

Further, at any radius in each circular region, the flow resistance of the flow channel structure decreases with a first slope k1 along the radial direction of the center-directed edge of the circular region, and the flow resistance of the flow channel structure not in the circular region is the same as the flow resistance of the flow channel structure at the extreme edge of the circular region.

Further, the first slope k1 satisfies that-H/r is less than or equal to k1 and less than 0, wherein 0 is less than H and less than H, and H is the height of the gas diffusion chamber.

Further, the plurality of air inlets are arranged on the side surface of the gas diffusion chamber and are positioned on the outer side of the gas homogenizing pipe relatively, the air inlets correspond to a plurality of gas homogenizing pipe areas, each gas homogenizing pipe area is a region where a first circle projected on the bottom surface of the gas diffusion chamber with the radius R is intersected with the bottom surface of the gas diffusion chamber by taking the center point of the corresponding air inlet as the center, and each intersected region is not overlapped with each other, wherein R is more than or equal to 0.25R and less than 0.5R, and R is the equivalent radius of the gas homogenizing device.

Further, a second circle projected on the bottom surface of the gas diffusion chamber by taking the center point of the corresponding gas inlet as the center and the radius L is intersected with the intersected area on an arc line, the flow resistance adjusting mechanism is adjusted to enable the flow resistance of each flow channel structure on the arc line to be the same, the flow resistance of each flow channel structure on the arc line is decreased with a second slope k2 along with the increase of L, the flow resistance of each flow channel structure not in the intersected area is the same as the flow resistance of the flow channel structure at the most edge of the intersected area, wherein the projection of the center point of the corresponding gas inlet on the bottom surface of the gas diffusion chamber is defined as an O point, the arc line does not pass through the O point, L is the radial distance between any point on the connecting line between the O point and the center point of the bottom surface of the gas diffusion chamber and the O point, and L is more than or equal to 0 and less than or equal to r.

Further, the second slope k2 satisfies that-H/r is less than or equal to k2 and less than 0, wherein 0 is less than H and less than H, and H is the height of the gas diffusion chamber.

Further, a plurality of spraying ports communicated with the reaction chamber are formed in the bottom of the gas diffusion chamber, and the spraying ports are communicated with the gas homogenizing pipes in a one-to-one correspondence mode.

Further, the length of each gas homogenizing pipe is the same.

Further, the length of the air homogenizing pipe decreases along the direction approaching the air inlet to the direction separating from the air inlet.

The present invention also provides a gas homogenizing device for inputting a reaction gas into a reaction chamber, comprising:

the first gas diffusion chambers are provided with a plurality of first gas inlets which are arranged on the top surface of the first gas diffusion chambers and are used for inputting first reaction gases into the first gas diffusion chambers;

the second gas diffusion chambers are stacked with the first gas diffusion chambers, a plurality of second gas inlets are arranged on the side surfaces of the second gas diffusion chambers and used for inputting second reaction gases into the second gas diffusion chambers, and a plurality of first spraying ports and a plurality of second spraying ports which are communicated with the reaction chambers are arranged at the bottoms of the second gas diffusion chambers;

the first gas homogenizing pipes are arranged in the first gas diffusion chamber and are communicated with the first spraying ports from the first gas diffusion chamber to the second gas diffusion chamber so as to input the first reaction gas into the reaction chamber;

The second gas homogenizing pipes are arranged in the second gas diffusion chamber, are mutually isolated from the first gas homogenizing pipes and are communicated with the second spraying ports so as to input the second reaction gas into the reaction chamber;

the flow resistance adjusting mechanism is movably sleeved on at least part of the first air homogenizing pipe and/or at least part of the second air homogenizing pipe so as to adjust the blocking force of the air flowing through the first air homogenizing pipe and/or the second air homogenizing pipe along the axial movement corresponding to the first air homogenizing pipe and/or the second air homogenizing pipe, so that the blocking force of the air is decreased along the direction approaching the first air inlet to the direction away from the first air inlet, and/or the blocking force of the air is decreased along the direction approaching the second air inlet to the direction away from the second air inlet.

Further, each first air inlet corresponds to a plurality of first air homogenizing pipe areas, each first air homogenizing pipe area is a circular area which is projected on the bottom surface of the first air diffusion chamber with the center point of the corresponding first air inlet as the center and the radius r1, and the circular areas are not overlapped with each other; each second gas inlet corresponds to a plurality of second gas homogenizing pipe areas, each second gas homogenizing pipe area is a region where a first circle projected on the bottom surface of the second gas diffusion chamber with a radius r2 and the bottom surface of the second gas diffusion chamber intersect with each other by taking the center point of the corresponding second gas inlet as the center, and each intersecting region is not overlapped with each other; wherein R1 is more than or equal to 0.25 and less than 0.5R, R2 is more than or equal to 0.25 and less than 0.5R, and R is the equivalent radius of the gas homogenizing device.

Further, the flow resistance adjusting mechanism comprises an inner sleeve which is arranged in the first uniform air pipe in a penetrating way from the upper end in a sealing way, an air inlet hole is formed in the top end of the inner sleeve, and the reaction gas enters the first uniform air pipe through the air inlet hole; the height of the inner sleeve arranged on the first uniform air pipe in the radial direction of the circle center pointing to the edge of each circular area, which is exposed out of the upper end of the first uniform air pipe, is gradually decreased, and the height of the inner sleeve arranged on the first uniform air pipe, which is not arranged in the circular area and is not exposed out of the upper end of the first uniform air pipe in the most edge of the circular area, is the same.

Further, the flow resistance adjusting mechanism comprises an inner sleeve sleeved in the second uniform air pipe from the upper end, an air inlet is arranged at the top end of the inner sleeve, and the reaction gas enters the second uniform air pipe through the air inlet; the second circle projected on the bottom surface of the second gas diffusion chamber with the center point of the corresponding second gas inlet and the radius L is intersected with an arc line, the heights of the inner sleeves arranged on the second gas diffusion chamber on the arc line are the same, along with the increase of L, the heights of the inner sleeves arranged on the corresponding second gas diffusion chamber on the arc line are gradually decreased, the heights of the inner sleeves arranged on the second gas diffusion chamber on the non-intersecting area are the same as the heights of the inner sleeves arranged on the most edge of the intersecting area on the second gas diffusion chamber, wherein the projection of the center point of the corresponding second gas inlet on the bottom surface of the second gas diffusion chamber is defined as an O point, the distance between the L and the radial point of the second gas diffusion chamber is equal to or less than or equal to 0.

The invention also provides semiconductor process equipment, which comprises a substrate supporting part arranged in the reaction chamber and used for arranging a substrate, and the gas homogenizing device, wherein the gas homogenizing device is arranged opposite to the substrate supporting part and used for uniformly introducing the reaction gas subjected to flow resistance adjustment by the gas homogenizing device into the reaction chamber so as to form a film layer with uniform thickness on the surface of the substrate.

According to the invention, the plurality of gas homogenizing pipes communicated with the reaction chamber are arranged in the gas diffusion chamber of the gas homogenizing device, and the resistance of the gas flowing through at least part of the gas homogenizing pipes is regulated by arranging the flow resistance regulating mechanism on at least part of the gas homogenizing pipes, so that the flow of the gas when the gas is led out of the gas homogenizing device by each gas homogenizing pipe is uniform, and the gas homogenizing effect is achieved.

By arranging the gas homogenizing device on the semiconductor process equipment, the reaction gas subjected to flow resistance adjustment by the gas homogenizing device can be uniformly introduced into the reaction chamber, so that a film layer with uniform thickness can be formed on the surface of the substrate. And the resistance of the reactant gas flowing through each gas homogenizing pipe can be independently set, so that the method can be suitable for different process requirements without changing the gas homogenizing device, and the cost is saved.

Drawings

FIG. 1 is a schematic view of a gas homogenizing device according to a first preferred embodiment of the present invention;

FIG. 2 is a schematic diagram showing a flow resistance adjusting mechanism according to a preferred embodiment of the present invention;

FIG. 3 is a schematic view of a top inlet according to a preferred embodiment of the present invention;

FIG. 4 is a schematic diagram showing a distribution pattern of the top air inlet corresponding to the uniform air pipe region according to a preferred embodiment of the present invention;

FIG. 5 is a schematic view showing a side air inlet structure according to a preferred embodiment of the present invention;

FIG. 6 is a schematic diagram showing a distribution pattern of side air inlets corresponding to the uniform air pipe region according to a preferred embodiment of the present invention;

FIG. 7 is a schematic diagram of flow resistance adjustment for the gas equalization pipe in the gas equalization pipe region of FIG. 6;

FIG. 8 is a schematic diagram of a gas homogenizing device according to a second preferred embodiment of the present invention;

FIG. 9 is an enlarged schematic view of a part of the air homogenizing device in FIG. 8;

FIG. 10 is a schematic view of an air inlet arrangement of the air homogenizing apparatus of FIG. 8;

FIG. 11 is a schematic view showing an arrangement structure of a gas homogenizing device on a semiconductor processing apparatus according to a preferred embodiment of the present invention;

fig. 12 is a schematic view showing a structure of a conventional semiconductor processing apparatus for forming a film on a substrate.

Detailed Description

For the purpose of making the objects, technical solutions and advantages of the embodiments of the present invention more apparent, the technical solutions in the embodiments of the present invention will be clearly and completely described below, and it is apparent that the described embodiments are some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention. Unless otherwise defined, technical or scientific terms used herein should be given the ordinary meaning as understood by one of ordinary skill in the art to which this invention belongs. As used herein, the word "comprising" and the like means that elements or items preceding the word are included in the element or item listed after the word and equivalents thereof without precluding other elements or items.

The embodiment of the invention provides a gas homogenizing device, which is used for inputting reaction gas into a reaction chamber and comprises the following components:

an air inlet;

a gas diffusion chamber in communication with the gas inlet;

The flow resistance adjusting mechanism is movably sleeved on at least part of the air homogenizing pipe to adjust the flow resistance of the at least part of the air homogenizing pipe through axial movement along the air homogenizing pipe, so that the flow resistance of the air homogenizing pipe is gradually decreased along the direction approaching to the air inlet and away from the air inlet.

According to the embodiment of the invention, the plurality of gas homogenizing pipes communicated with the reaction chamber are arranged in the gas diffusion chamber of the gas homogenizing device, and the flow resistance of the gas homogenizing pipe into which the reaction gas enters is regulated by arranging the flow resistance regulating mechanism on at least part of the gas homogenizing pipes, so that the flow of the reaction gas when the gas homogenizing pipes are led out of the gas homogenizing device is uniform, and the gas homogenizing effect is achieved.

By arranging the gas homogenizing device on the semiconductor process equipment, the reaction gas subjected to flow resistance adjustment by the gas homogenizing device can be uniformly introduced into the reaction chamber, so that a film layer with uniform thickness can be formed on the surface of the substrate. And because the flow resistance of each gas homogenizing pipe can be independently adjusted, the gas homogenizing pipe can meet different process requirements, and a gas homogenizing device does not need to be replaced, so that the cost is saved.

The following describes the embodiments of the present invention in further detail with reference to the accompanying drawings.

Referring to fig. 1, fig. 1 is a schematic structural diagram of a gas homogenizing device according to a first preferred embodiment of the present invention. As shown in fig. 1, a gas distribution apparatus 10 of the present invention is useful for performing a homogenization treatment on a reaction gas introduced into a reaction chamber of a semiconductor process device (e.g., a chemical vapor deposition device, a physical vapor deposition device, a plasma enhanced vapor deposition device, a Metal Organic Chemical Vapor Deposition (MOCVD) device, etc.), so that the treated reaction gas can be introduced into the reaction chamber at a uniform flow rate, thereby enabling formation of a film layer having a uniform thickness on a surface of a substrate (e.g., a semiconductor wafer).

As shown in fig. 1, a gas homogenizing device 10 of the present invention includes a gas diffusion chamber 13 formed by surrounding a housing 11, and a plurality of gas homogenizing pipes 12 provided in the gas diffusion chamber 13, the gas homogenizing pipes 12 communicating with the reaction chamber. The housing 11 may be disposed directly above a substrate to be processed, and has a bottom surface parallel to the substrate surface and corresponding in shape. For example, when the substrate is circular, the housing 11 will also correspond to a bottom surface having a circular shape that is sized appropriately. The bottom surface of the housing 11 also serves as the bottom surface of the gas diffusion chamber 13. The gas inlet 14 is provided in the housing 11 in communication with the gas diffusion chamber 13.

Each of the gas homogenizing pipes 12 may be vertically disposed on the bottom surface of the gas diffusion chamber 13, and may form a gas homogenizing pipe array according to a certain rule. For example, the gas homogenizing pipes 12 in the gas homogenizing pipe array may be uniformly distributed on the bottom surface of the gas diffusion chamber 13 in a central symmetry manner; alternatively, the gas homogenizing pipes 12 in the gas homogenizing pipe array may be arranged in rows and columns and uniformly distributed on the bottom surface of the gas diffusion chamber 13. Other gas homogenizing tube arrays may be formed in an arrangement as desired according to process requirements.

Referring to fig. 1, the gas inlet 14 may be provided on the top surface of the gas diffusion chamber 13 and may protrude from the top surface of the housing 11.

The air inlet 14 may be positioned relatively above the array of air homogenizing tubes. The gas inlet 14 may be provided in one or more of the gas diffusion chambers 13.

As shown in fig. 1, the bottom of the gas diffusion chamber 13 is provided with a plurality of gas outlet holes 17 as spray ports, which are communicated with the reaction chamber (not shown). The air outlet holes 17 are communicated with the air homogenizing pipe 12 one by one, so that the lower end of the air homogenizing pipe 12 can be communicated with the reaction chamber through the corresponding air outlet holes 17. In some embodiments, the gas homogenizing pipe 12 is welded to the bottom of the gas diffusion chamber 13 in a one-to-one correspondence with the gas outlet holes 17, so as to be communicated with the gas outlet holes 17.

At least part of the gas homogenizing pipe 12 is provided with a flow resistance adjusting mechanism 15, namely, the flow resistance adjusting mechanism 15 can be arranged on the gas homogenizing pipe 12 at the position where the flow resistance adjustment is required according to the process requirement (such as combining the process temperature, the gas flow rate, the reaction chamber pressure and the like), and all the gas homogenizing pipes 12 can be provided with the flow resistance adjusting mechanism 15, so that even if the process condition changes, the flow resistance of the gas homogenizing pipe 12 can be adjusted through the flow resistance adjusting mechanism 15, and the gas uniformity is improved. A structure composed of the gas homogenizing pipe 12 and the flow resistance adjusting mechanism 15 correspondingly arranged is defined, and the gas homogenizing pipe 12 without the flow resistance adjusting mechanism 15 is of a flow passage structure so as to allow the gas in the gas diffusion chamber 13 to circulate therein.

Since the gas pressure in the gas diffusion chamber 13 is lower in the direction away from the gas inlet 14 than in the direction away from the gas inlet 14, in some embodiments, the flow resistance of the corresponding gas homogenizing pipe 12 is adjusted by the flow resistance adjusting mechanism 15 so that the flow resistance of the flow path structure near the gas inlet 14 is larger than the flow resistance of the flow path structure far from the gas inlet 14, and in other embodiments, the flow resistance of the flow path structure is decreased in the direction toward the gas inlet 14 (direction a shown in fig. 1), so that the resistance of the reaction gas flowing through the flow path structure near the gas inlet 14 is larger than the resistance of the reaction gas flowing through the flow path structure far from the gas inlet 14, and the uniformity of the reaction gas flowing into the reaction chamber is improved.

Referring to fig. 1-2, in this embodiment, the flow resistance adjusting mechanism 15 may include an inner sleeve 152 that is hermetically inserted into the gas homogenizing pipe 12 from the upper end of the gas homogenizing pipe 12, and an air inlet 16 is provided at the top end of the inner sleeve 152, and the reaction gas enters the gas homogenizing pipe 12 through the air inlet 16. The height of the inner sleeve 152 exposed out of the upper end of the air homogenizing pipe 12 (i.e. the length of the flow channel structure formed by the air homogenizing pipe 12 and the corresponding flow resistance adjusting mechanism 15) is adjusted by moving the inner sleeve 152 up and down in the air homogenizing pipe 12 so that the inner sleeve 152 moves along the axial direction of the air homogenizing pipe 12 to adjust the flow resistance of the air homogenizing pipe 12. Wherein, the height of the inner sleeve 152 exposed at the upper end of the gas homogenizing pipe 12 can be reduced by moving the inner sleeve 152 downwards, i.e. the length of the flow channel structure is reduced, so as to correspondingly reduce the flow resistance of the flow channel structure through which the reaction gas flows; conversely, by moving the inner sleeve 152 upward, the height of the inner sleeve 152 exposed to the upper end of the gas homogenizing pipe 12 is increased, i.e. the length of the flow channel structure is increased, so as to correspondingly increase the flow resistance of the flow channel structure through which the reaction gas flows (i.e. the resistance of the gas introduced through the gas inlet hole 16 and flowing through the flow resistance adjusting mechanism 15 and the gas homogenizing pipe 12 sequentially is proportional to the height of the inner sleeve 152 exposed to the upper end of the gas homogenizing pipe 12).

In some embodiments, the flow resistance adjusting mechanism 15 is adjusted such that the height of the inner sleeve 152 exposed to the upper end of the gas homogenizing pipe 12 on the gas homogenizing pipe 12 near the gas inlet 14 is greater than the height of the inner sleeve 152 exposed to the upper end of the gas homogenizing pipe 12 on the gas homogenizing pipe 12 far from the gas inlet 14, so that the resistance of the reaction gas flowing through the flow channel structure formed by the flow resistance adjusting mechanism 15 and the corresponding gas homogenizing pipe 12 near the gas inlet 14 is greater than the resistance of the reaction gas flowing through the corresponding flow channel structure far from the gas inlet 14, and the uniformity of the reaction gas flowing into the reaction chamber is improved. Specifically, by adjusting the up-down position of the inner sleeve 152 in the air homogenizing pipe 12, the inner sleeve 152 on the air homogenizing pipe 12 closest to the air inlet 14 has the largest exposed height, and the inner sleeve 152 on the air homogenizing pipe 12 farthest from the air inlet 14 has the smallest exposed height, and the exposed heights of the inner sleeves 152 on the air homogenizing pipes 12 between the two are gradually decreased. In this way, the flow resistance of the gas in each flow path structure can be decreased in the direction approaching the gas inlet 14 to the direction separating from the gas inlet 14, so that the flow rate of the reaction gas finally discharged from each gas outlet hole 17 can be made to be uniform. In this way, the flow resistance of the flow path structure formed by the gas homogenizing pipes 12 and the flow resistance adjusting mechanism 15 is adjusted by adjusting the length of the flow path structure formed by the inner sleeve 152, so that the flow resistance of the flow path structure through which the gas introduced into the flow resistance adjusting mechanism 15 from the gas diffusion chamber 13 flows is adjusted, and the flow rate of the gas introduced into the bottom surface of the gas diffusion chamber 13 from each gas homogenizing pipe 12 can be uniformized.

In some embodiments, as shown in FIG. 2, the outer wall of inner sleeve 152 may be provided with first threads 182 and the inner wall of the riser 12 may be provided with second threads 181 that mate with the first threads 182. Thus, inner sleeve 152 may be threaded into the trachea 12 in a dynamic sealing engagement with the trachea 12 and may be adjusted in its up-and-down position within the trachea 12 by rotating inner sleeve 152.

Further, the inner wall of the inner sleeve 152 may be provided with a socket structure 183, and the socket structure 183 may be a rotation control structure, and by matching a rotation tool (such as a wrench, a sleeve, etc.) with the socket structure 183, the inner sleeve 152 rotates relative to the air homogenizing pipe 12, so as to adjust the vertical relative positions of the inner sleeve 152 and the air homogenizing pipe 12.

In some embodiments, each of the chimneys 12 is the same in length, and the flow resistance of the chimneys 12 is adjusted by up and down movement of the flow resistance adjustment mechanism 15 in the chimneys 12; in other embodiments, the length of the air homogenizing pipe 12 decreases along the direction approaching the air inlet 14 and moving away from the air inlet 14, that is, the length of the air homogenizing pipe 12 near the air inlet 14 is long when the air homogenizing device is initially designed, the length of the air homogenizing pipe 12 far from the air inlet 14 is low to roughly adjust the flow resistance of the air homogenizing pipe 12, and then the flow resistance of the air homogenizing pipe 12 is finely adjusted by moving up and down in the air homogenizing pipe 12 through the flow resistance adjusting mechanism 15 according to specific process requirements.

In this embodiment, the number of the air inlets 14 is one to a plurality. When the number of the air inlets 14 is one, the regions where the air homogenizing pipes 12 are located may form an air homogenizing pipe region, and the air flow resistance in each flow channel structure may be reduced in a direction approaching the air inlets 14 and moving away from the air inlets 14 by adjusting the flow resistance adjusting mechanism 15 (for example, a flow resistance adjusting mechanism similar to the form of the inner sleeve 152).

In some embodiments, when the number of the gas inlets 14 is plural, the plural gas inlets 14 are disposed on the top surface of the gas diffusion chamber 13 and are located above the gas homogenizing pipe 12, each gas inlet 14 corresponds to plural gas homogenizing pipe areas, each gas homogenizing pipe area is a circular area projected on the bottom surface of the gas diffusion chamber 13 with a radius R about a center point of the corresponding gas inlet 14 as a center, and each circular area is not overlapped with each other, where R is greater than or equal to 0.25R and less than 0.5R, and R is an equivalent radius of the gas homogenizing device. In some embodiments, the equivalent radius of the gas homogenizing device is the radius of the bottom surface of the gas diffusion chamber 13. When a plurality of gas inlets 14 are arranged on the top surface of the gas diffusion chamber 13, the plurality of gas inlets 14 may be uniformly distributed on the top surface of the gas diffusion chamber 13, for example, the plurality of gas inlets 14 are uniformly distributed on the top surface of the gas diffusion chamber 13 around the central axis of the gas diffusion chamber 13; in other embodiments, at least 2 of the plurality of gas inlets 14 are evenly distributed over the gas diffusion chamber 13 about a central axis of the gas diffusion chamber 13; in still other embodiments, the plurality of gas inlets 14 are irregularly distributed on the top surface of the gas diffusion chamber 13, depending on the actual process.

3-4, the number of the gas inlets 14 is 4, including the gas inlets 141-144, which are uniformly arranged on the top surface of the gas diffusion chamber 13 (i.e., the top surface of the housing 11), and the 4 gas inlets 141-144 correspond to the 4 first uniform gas pipe areas A1-A4. The gas inlet 141 corresponds to a first gas homogenizing pipe area A1, the first gas homogenizing pipe area A1 is a circular area projected on the bottom surface of the gas diffusion chamber 13 by taking a center point of the gas inlet 141 as a center and a radius r, the gas inlet 142 corresponds to a first gas homogenizing pipe area A2, the first gas homogenizing pipe area A2 is a circular area projected on the bottom surface of the gas diffusion chamber 13 by taking a center point of the gas inlet 142 as a center and a radius r, the gas inlet 143 corresponds to a first gas homogenizing pipe area A3, the first gas homogenizing pipe area A3 is a circular area projected on the bottom surface of the gas diffusion chamber 13 by taking a center point of the gas inlet 143 as a center and a radius r, the gas inlet 144 corresponds to a first gas homogenizing pipe area A4, and the first gas homogenizing pipe area A4 is a circular area projected on the bottom surface of the gas diffusion chamber 13 by taking a center point of the gas inlet 144 as a center and a radius r. The first gas homogenizing pipe areas A1-A4 are not overlapped with each other, wherein R is more than or equal to 0.25 and less than or equal to 0.5R, and R is the equivalent radius of the gas homogenizing device. In some embodiments, the equivalent radius of the gas homogenizing device is the radius of the bottom surface of the gas diffusion chamber 13. Each first homogenizing zone comprises a plurality of homogenizing tubes 12, and regions not in the circular region (as illustrated by the regions B1-B5) also comprise a plurality of homogenizing tubes 12.

The flow resistance adjusting means 15 is adjusted such that, at an arbitrary radius in each of the circular regions, the flow resistance of the flow path structure decreases at a first slope k1 in a radial direction of a center-directed edge of the circular region, and the flow resistance of the flow path structure not in the circular region is the same as the flow resistance of the flow path structure at the outermost edge of the circular region. In some embodiments, the first slope k1 satisfies-H/r.ltoreq.k1 < 0, where 0 < H < H, H being the height of the gas diffusion chamber.

It will be appreciated that the gas flow resistance of the flow channel structure at the extreme edge of any one of the first riser regions is relatively minimal, as is the gas flow resistance of the flow channel structure between any two adjacent first riser regions, as is the gas flow resistance of the flow channel structure at the extreme edge of the first riser region (e.g., where the height of each riser 12 is uniform, the inner sleeve 152 on the riser 12 has a minimal exposed height, as shown in fig. 1).

Referring to fig. 4, taking the case that the gas inlet 141 corresponds to the first uniform gas pipe area A1 as an example, in a radial direction from a projection O1 of a center point of the gas inlet 141 on the bottom surface of the gas diffusion chamber 13 to an edge of the first uniform gas pipe area A1, a flow resistance of a flow channel structure formed by the uniform gas pipe 12 and the corresponding flow resistance adjusting mechanism 15 in the first uniform gas pipe area A1 is gradually reduced (for example, heights of the uniform gas pipes 12 in the first uniform gas pipe area A1 are the same, so that an exposed height of the inner sleeve 152 on the uniform gas pipe 12 is gradually reduced). The minimum slope can be calculated as-H/r, where 0 < H (the longest length of the gas homogenizing pipe 12 is smaller than the height of the gas diffusion chamber 13), assuming that the exposed height of the inner sleeve 152 at the point O1 is highest, such that the length of the gas homogenizing pipe 12 at the point is H, and in the extreme case the length of the gas homogenizing pipe 12 at the extreme edge (the place farthest from the gas inlet 141 in the radial direction in the first gas homogenizing pipe region A1) is 0. Thus, in the radial direction from the point O1 to the edge of the first uniform gas tube region A1, the flow resistance of the flow path structure in the first uniform gas tube region A1 may be decreased with any slope between-h/r.ltoreq.k1 < 0. The other first uniform gas pipe areas A2-A4 are similar to the first uniform gas pipe area A1, and will not be described again here. In order to avoid abrupt changes in the length of the gas homogenizing pipe 12 at the boundary, which leads to uneven gas flow, the flow resistance of the multiple flow channel structures in regions other than the circular regions (as illustrated by the regions B1-B5) is the same as at the extreme edges of the circular regions.

In other embodiments, when the number of the gas inlets 14 is plural, the plural gas inlets 14 are disposed on the side surface of the gas diffusion chamber 13 and are located opposite to the outer side of the gas homogenizing pipe 12, each gas inlet 14 corresponds to plural gas homogenizing pipe areas, each gas homogenizing pipe area is an area where a first circle projected on the bottom surface of the gas diffusion chamber 13 with a radius R intersects with the bottom surface of the gas diffusion chamber 13 with a center point of the corresponding gas inlet 14 as a center, each intersecting area is not overlapped with each other, where R is equal to or greater than 0.25R and less than 0.5R, and R is an equivalent radius of the gas homogenizing device. In some embodiments, the equivalent radius of the gas homogenizing device is the radius of the bottom surface of the gas diffusion chamber 13. When a plurality of gas inlets 14 are arranged on the side surface of the gas diffusion chamber 13, the plurality of gas inlets 14 may be uniformly distributed on the side surface of the gas diffusion chamber 13, for example, the plurality of gas inlets 14 are positioned on the same horizontal plane on the side surface of the gas diffusion chamber 13 and uniformly distributed around the central axis of the gas diffusion chamber 13; in other embodiments, at least 2 of the plurality of gas inlets 14 are located at the same level on the side of the gas diffusion chamber 13 and are uniformly distributed around the central axis of the gas diffusion chamber 13; in still other embodiments, the plurality of gas inlets 14 are irregularly distributed on the side of the gas diffusion chamber 13, depending on the actual process.

For example, referring to fig. 5 to 6, the number of the gas inlets 14 is 4, including the gas inlets 141'-144', which are uniformly arranged on the side of the gas diffusion chamber 13 (i.e., the side of the housing 11), and the 4 gas inlets 141'-144' correspond to the 4 second gas distribution areas A1'-A4'. The gas inlet 141 'corresponds to a second gas homogenizing pipe area A1', and the second gas homogenizing pipe area A1 'is a region where a first circle c1 projected on the bottom surface of the gas diffusion chamber 13 with a radius r with respect to a center point of the corresponding gas inlet 141' intersects with the bottom surface of the gas diffusion chamber 13, as shown by a hatched area in fig. 6; the gas inlet 142 'corresponds to a second gas homogenizing pipe area A2', and the second gas homogenizing pipe area A2 'is an area where a first circle c2 projected on the bottom surface of the gas diffusion chamber 13 with a radius r with the center point of the corresponding gas inlet 142' as a center intersects with the bottom surface of the gas diffusion chamber 13; the gas inlet 143 'corresponds to a second gas homogenizing pipe area A3', and the second gas homogenizing pipe area A3 'is a region where a first circle c3 projected on the bottom surface of the gas diffusion chamber 13 with a radius r with respect to a center point of the corresponding gas inlet 143' intersects with the bottom surface of the gas diffusion chamber 13; the gas inlet 144 'corresponds to a second gas homogenizing pipe area A4', and the second gas homogenizing pipe area A4 'is an area where a first circle c4 projected on the bottom surface of the gas diffusion chamber 13 with a radius r with respect to a center point of the corresponding gas inlet 144' intersects with the bottom surface of the gas diffusion chamber 13. The second gas homogenizing pipe areas A1'-A4' are not overlapped with each other, wherein R is more than or equal to 0.25 and less than 0.5R, and R is the equivalent radius of the gas homogenizing device. In some embodiments, the equivalent radius of the gas homogenizing device is the radius of the bottom surface of the gas diffusion chamber 13. Each second homogenizing zone includes a plurality of homogenizing tubes 12 therein, and regions not within the intersecting region (as illustrated by the regions B1 '-B5') also include a plurality of homogenizing tubes 12.

The second circle projected on the bottom surface of the gas diffusion chamber 13 with the center point of the gas inlet 14 as the center and the radius L is intersected with the intersected area on an arc line, the flow resistance adjusting mechanism 15 is adjusted to make the flow resistance of each flow channel structure on the arc line identical, and as L increases, the flow resistance of the corresponding flow channel structure on the arc line decreases with a second slope k2, the flow resistance of the flow channel structure not in the intersected area is adjusted to be identical with the flow resistance of the flow channel structure at the most edge of the intersected area, wherein the projection of the center point of the gas inlet 14 on the bottom surface of the gas diffusion chamber is defined as an O point, the arc line does not pass through the O point, L is the radial distance between any point on the connecting line between the O point and the center point of the bottom surface of the gas diffusion chamber 13 and the O point, and L is not less than or equal to 0.

It will be appreciated that the gas flow resistance of the flow channel structure at the very edge of any one of the second gas distribution pipe regions, i.e. the arc that does not pass through the O-point at the intersection of the corresponding first circle and the corresponding intersection region, is relatively minimum, and the gas flow resistance of the flow channel structure between any two adjacent second gas distribution pipe regions is also relatively minimum as is the gas flow resistance of the flow channel structure at the very edge (e.g. the inner sleeve 152 on the gas distribution pipe 12 has the smallest exposed height where the height of each gas distribution pipe 12 is uniform).

Referring to fig. 6-7, taking the projection of the center point of the gas inlet 141' on the bottom surface of the gas diffusion chamber 13 as the O1' point corresponding to the second gas homogenizing pipe area A1', the distance between any point M on the line O1' N between the O1' point and the center point N of the bottom surface of the gas diffusion chamber 13 and the O1' point is L, where 0.ltoreq.l.ltoreq.r, and the radius L forms a second circle on the bottom surface of the gas diffusion chamber 13 with the O1' point as the center, the second circle intersects with the second gas homogenizing pipe area A1' at an arc P1P2 that does not pass through the O1' point, and the flow resistance adjusting mechanism 15 is adjusted so that the flow resistance of each flow channel structure on the arc P1P2 is the same (for example, when the heights of each gas homogenizing pipe 12 on the arc P1P2 are the same, the exposed heights of the inner sleeve 152 on each gas homogenizing pipe 12 are the same). As point M moves away from point O1', L increases, the flow resistance of the flow path structure over the corresponding arc decreases with a second slope k2 (e.g., the exposed height of the inner sleeve 152 over the respective chimneys 12 gradually decreases with a uniform height of each chimneys 12 over the corresponding arc). It can be assumed that the exposed height of the inner sleeve 152 at point O1 'is highest such that the length of the homogenizing tube 12 is H there, and in the extreme case the length of the homogenizing tube 12 at point M' (i.e. furthest from point O1 'on line O1' N in the second homogenizing tube region A1 'from point O1' is distance r) is 0, such that the smallest decreasing slope can be calculated as-H/r, where 0 < H (the longest length of the homogenizing tube 12 is less than the height H of the gas diffusion chamber 13). Therefore, as L increases, the flow resistance of each flow channel structure on the corresponding arc line can be decreased with any slope between-h/r and k2 < 0.

The other second uniform gas pipe areas A2' -A4' are similar to the second uniform gas pipe area A1', and will not be described again here. In order to avoid abrupt changes in the length of the gas distribution pipe 12 at the boundary, resulting in uneven gas flow, the flow resistance of the plurality of flow channel structures not in the intersecting region (e.g., the region indicated by the reference character B1 '-B5') is adjusted to be the same as the flow resistance of the flow channel structure at the extreme edge of the intersecting region (e.g., the region indicated by the reference character A1 '-A4').

It should be noted that, in the above embodiment, the number of the air inlets 14 is 4, but the air inlets in the embodiment of the present invention are not limited to 4, so long as the number of the air inlets of each gas diffusion chamber is greater than or equal to 2, the present invention is applicable to partition arrangement and flow resistance adjustment of the gas homogenizing pipe in the gas diffusion chamber.

Referring to fig. 8-9, fig. 8 is a schematic structural diagram of a gas homogenizing device according to a second preferred embodiment of the present invention, and fig. 9 is an enlarged schematic partial structural diagram of the gas homogenizing device in fig. 8. As shown in fig. 8-9, a plurality of gas diffusion chambers 13 may be provided in the housing 11 of the gas uniformizing device 10; the gas diffusion chambers 13 may be stacked one above the other to form a stacked structure, and the gas diffusion chambers 13 are isolated from each other. In some embodiments, two adjacent gas diffusion chambers may be separated by a separator 19 to form two gas diffusion chambers 13 that are isolated from each other.

Each gas diffusion chamber 13 may be provided with one to a plurality of gas inlets 14. Wherein the gas inlet 14 on one gas diffusion chamber 13 at the uppermost layer may be provided on the top surface of the housing 11 (gas diffusion chamber 13); the gas inlets 14 located on the respective gas diffusion chambers 13 of the lower layer may be provided on the side of the housing 11 (gas diffusion chamber 13). In this way, different reactive gases can be introduced into the respective gas diffusion chambers 13 through different gas inlets 14. The gas homogenizing pipes 12 in the gas diffusion chambers 13 located at the upper layer of the gas diffusion chamber 13 located at the lowest layer respectively penetrate downward to the bottom surface of the gas diffusion chamber 13 located at the lowest layer in an isolated manner, are also isolated from the gas homogenizing pipes 12 in the gas diffusion chamber 13 located at the lowest layer, and finally are commonly led out of the gas homogenizing device 10 through the gas outlet holes 17 (spray ports) respectively corresponding to and arranged on the bottom surface of the casing 11.

In the following, two gas diffusion chambers 13 stacked one above the other are provided in the housing 11 of the gas distribution device 10.

Please refer to fig. 8-10. The gas uniformizing device 10 includes a first gas diffusion chamber 131 and a second gas diffusion chamber 132 disposed one above the other. The first gas inlets are disposed on the top surface of the first gas diffusion chamber 131 for inputting the first reaction gas into the first gas diffusion chamber 131, and the second gas inlets are disposed on the side surface of the second gas diffusion chamber 132 for inputting the second reaction gas into the second gas diffusion chamber 132. Illustratively, for the gas distribution apparatus 10 applied to a nitride MOCVD tool, the first reactant gas includes a Hydride, such as NH ₃ The second reactant gas includes a metal organic source, such as TMGa. In some embodiments, the plurality of first gas inlets may be uniformly distributed over the top surface of the first gas diffusion chamber 131, e.g., the plurality of first gas inlets may be at the first gasUniformly distributed on the top surface of the diffusion chamber 131 around the central axis of the first gas diffusion chamber 131; in other embodiments, at least 2 of the plurality of first gas inlets are evenly distributed over the first gas diffusion chamber 131 about a central axis of the first gas diffusion chamber 131; in still other embodiments, the plurality of first gas inlets are irregularly distributed on the top surface of the first gas diffusion chamber 131, particularly according to actual processes. Also, in some embodiments, the plurality of second gas inlets may be uniformly distributed on the side of the second gas diffusion chamber 132, e.g., the plurality of second gas inlets may be in the same horizontal plane on the side of the second gas diffusion chamber 132 and uniformly distributed about the central axis of the second gas diffusion chamber 132; in other embodiments, at least 2 of the plurality of second gas inlets are located at the same level on the side of the second gas diffusion chamber 132 and are uniformly distributed about the central axis of the second gas diffusion chamber 132; in still other embodiments, the plurality of second gas inlets are irregularly distributed on the side of the second gas diffusion chamber 132, depending on the actual process.

Wherein, a plurality of first gas outlet holes 171 (first spray openings) and a plurality of second gas outlet holes 172 (second spray openings) which are communicated with the reaction chamber are provided at the bottom of the second gas diffusion chamber 132 (bottom of the housing 11). The first gas diffusion chamber 131 and the second gas diffusion chamber 132 may be separated by a separator 19 to form two gas diffusion chambers 13 isolated from each other. The gas homogenizing pipe 12 may include a plurality of first gas homogenizing pipes 121 provided in a first gas diffusion chamber 131, and a plurality of second gas homogenizing pipes 122 provided in a second gas diffusion chamber 132. The lower end of the first gas homogenizing pipe 121 may penetrate downward from the partition 19 located on the bottom surface of the first gas diffusion chamber 131 to the second gas diffusion chamber 132, and communicate with the first gas outlet hole 171 located on the bottom of the second gas diffusion chamber 132, respectively, to input the first reaction gas into the reaction chamber. The second gas homogenizing pipe 122 is isolated from the first gas homogenizing pipe 121 and communicates with the second gas outlet hole 172, respectively, to input the second reaction gas into the reaction chamber.

The flow resistance adjusting mechanism 15 (not shown) is movably sleeved on at least part of the first air homogenizing pipe 121 and/or at least part of the second air homogenizing pipe 122, so as to adjust the blocking force of the air flowing through the corresponding first air homogenizing pipe 121 and/or the corresponding second air homogenizing pipe 122 along the axial movement of the corresponding first air homogenizing pipe 121 and/or the corresponding second air homogenizing pipe 122, so that the blocking force of the air decreases along the direction approaching the first air inlet to the direction separating from the first air inlet, and/or the blocking force of the air decreases along the direction approaching the second air inlet to the direction separating from the second air inlet.

The flow resistance adjusting means 15 comprises an inner tube 152 (refer to fig. 2) which is inserted into the air homogenizing tube 12 from the upper end in a sealing manner, and an air inlet hole 16 is formed in the top end of the inner tube 15. Reactant gas enters the manifold 12 through inlet holes 16. In addition, the inner sleeve 152 can move up and down in the gas homogenizing pipe 12, so that the resistance of the reaction gas flowing through the gas homogenizing pipe 12 can be adjusted by adjusting the height of the inner sleeve 152 exposed out of the upper end of the gas homogenizing pipe 12 (namely, adjusting the length of the whole gas homogenizing pipe 12).

The first air equalizing pipe 121, which is defined without the flow resistance adjusting mechanism 15, and the first air equalizing pipe 121, which is provided with the flow resistance adjusting mechanism 15, are both of a first flow path structure. The second air homogenizing pipe 122 provided with no flow resistance adjusting mechanism 15 and the second air homogenizing pipe 122 provided with the flow resistance adjusting mechanism 15 are both of a second flow path structure.

When the flow resistance adjusting mechanism 15 is provided in the first gas homogenizing pipe 121, the inner sleeve 152 is moved up and down in the first gas homogenizing pipe 121 to adjust the flow resistance of the first flow channel structure, thereby adjusting the uniformity of the first reaction gas supplied into the reaction chamber. When the flow resistance adjusting mechanism 15 is disposed in the second uniform gas pipe 122, the inner sleeve 152 moves up and down in the second uniform gas pipe 122 to adjust the flow resistance of the second flow channel structure, thereby adjusting the uniformity of the second reaction gas delivered into the reaction chamber.

In some embodiments, each of the first gas inlets corresponds to a plurality of first gas distribution areas, each of the second gas inlets corresponds to a plurality of second gas distribution areas, and for example, the following description will be given by taking the example of disposing 4 first gas inlets 141-144 on the top surface of the first gas diffusion chamber 131 and disposing 4 second gas inlets 141'-144' on the side surface of the second gas diffusion chamber 132, but the first gas inlets and the second gas inlets in the embodiments of the present invention are not limited to 4, as long as the number of gas inlets of each gas diffusion chamber is greater than or equal to 2, and each gas inlet is suitable for partition arrangement and flow resistance adjustment of the gas distribution pipes in the gas diffusion chamber accordingly.

Referring to fig. 3-4, 4 first air inlets 141-144 correspond to 4 first air homogenizing pipe areas A1-A4, that is, the first air inlet 141 corresponds to a first air homogenizing pipe area A1, the first air homogenizing pipe area A1 is a circular area projected on the bottom surface of the first air diffusing chamber 131 with the center point of the first air inlet 141 as the center and the radius r1, the first air inlet 142 corresponds to a first air homogenizing pipe area A2, the first air homogenizing pipe area A2 is a circular area projected on the bottom surface of the first air diffusing chamber 131 with the center point of the first air inlet 142 as the center and the radius r1, the first air inlet 143 corresponds to a first air homogenizing pipe area A3, the first air homogenizing pipe area A3 is a circular area projected on the bottom surface of the first air diffusing chamber 131 with the center point of the first air inlet 143 as the center and the radius r1, the first air inlet 144 corresponds to A4, and the first air inlet 142 is a circular area projected on the bottom surface of the first air diffusing chamber 131 with the center point of the first air inlet 144 as the center and the radius r 1. The first gas homogenizing pipe areas A1-A4 are not overlapped with each other, wherein R1 is more than or equal to 0.25R and less than 0.5R, and R is the equivalent radius of the gas homogenizing device. In some embodiments, the equivalent radius of the gas homogenizing device is the radius of the bottom surface of the first gas diffusion chamber 131. Each of the first gas distribution pipe sections includes a plurality of first gas distribution pipes 121 therein, and the region not in the circular region also includes a plurality of first gas distribution pipes 121.

Further, by moving the inner tube 152 of the flow resistance adjusting means 15 up and down in the first uniform gas tube 121, the height of the inner tube 152 exposed to the upper end of the first uniform gas tube 121 in the radial direction of the center-directed edge of the circular region is decreased in any radius in each circular region, and the height of the inner tube 152 exposed to the upper end of the first uniform gas tube 121 in the first uniform gas tube 121 not in the circular region and the first uniform gas tube 121 at the most edge of the circular region is adjusted to be the same. In some embodiments, at any radius in each circular area, the height of the inner sleeve 152 exposed to the upper end of the first gas homogenizing pipe 121 in the first gas homogenizing pipe 121 along the radial direction of the center of the circular area pointing to the edge decreases with a first slope k1, wherein the first slope k1 satisfies that-H/r 1 is less than or equal to k1 < 0, wherein 0 < H1, and H1 is the height of the first gas diffusion chamber 131. (please refer to the previous embodiments corresponding to fig. 3-4 for understanding).

Referring to fig. 5-6, the 4 second gas inlets 141'-144' correspond to the 4 second gas distribution areas A1'-A4', that is, the second gas inlet 141 'corresponds to the second gas distribution area A1', the second gas inlet 143 'corresponds to the second gas distribution area A3' with the center point of the corresponding second gas inlet 141 'as the center, the area where the first circle c1 projected on the bottom surface of the second gas diffusion chamber 132 with the radius r2 intersects with the bottom surface of the second gas diffusion chamber 132, the second gas inlet 142' corresponds to the second gas distribution area A2', the second gas distribution area A2' corresponds to the area where the first circle c2 projected on the bottom surface of the second gas diffusion chamber 132 with the radius r2 intersects with the bottom surface of the second gas diffusion chamber 132 with the center point of the second gas distribution area A3 'as the center, the second gas distribution area A3' with the radius r2 as the center, the area where the first circle c2 projected on the bottom surface of the second gas diffusion chamber 132 with the radius r2 intersects with the bottom surface of the second gas distribution area A4 'as the center, and the area where the second circle c2 projected on the bottom surface of the second gas diffusion chamber 132 with the bottom surface of the second gas distribution area A4' as the center. The second gas homogenizing pipe areas A1'-A4' are not overlapped with each other, wherein R2 is more than or equal to 0.25R and less than 0.5R, and R is the equivalent radius of the gas homogenizing device. In some embodiments, the equivalent radius of the gas distribution device is the radius of the bottom surface of the second gas diffusion chamber 132. Each of the second uniform gas pipe regions includes a plurality of second uniform gas pipes 122 therein, and the region not within the intersecting region also includes a plurality of second uniform gas pipes 122.

Further, a second circle projected on the bottom surface of the second gas diffusion chamber 132 with a radius L around the center point of each of the corresponding 4 second gas inlets 141'-144' intersects with the corresponding intersecting region on an arc line, the height of the inner tube 152 exposed to the upper end of the second gas homogenizing tube 122 in the second gas homogenizing tube 122 on the arc line is made the same by moving the inner tube 152 in the second gas homogenizing tube 122, and as L increases, the height of the inner tube 152 exposed to the upper end of the second gas homogenizing tube 122 in the second gas homogenizing tube 122 corresponding to the arc line decreases, and the height of the inner tube 152 exposed to the upper end of the second gas homogenizing tube 122 in the intersecting region is adjusted to be the same as the height of the inner tube 152 exposed to the upper end of the second gas homogenizing tube 122 in the second gas homogenizing tube 122 at the most edge of the intersecting region. Wherein, the projection of the center point of the second gas inlet on the bottom surface of the second gas diffusion chamber 132 is defined as an O point, the arc does not pass through the O point, and L is the radial distance between any point on the connecting line between the O point and the center point of the bottom surface of the second gas diffusion chamber 132 and the O point, and L is greater than or equal to 0 and less than or equal to r2. In some embodiments, as L increases, the height of the inner sleeve 152 exposed to the upper end of the second gas homogenizing pipe 122 in the second gas homogenizing pipe 122 corresponding to the arc decreases with a second slope k2, where the second slope k2 satisfies-H/r 2 being less than or equal to k2 < 0, where 0 < H2, and H2 is the height of the second gas diffusion chamber 132. (please refer to the previous embodiments corresponding to fig. 5-7 for understanding).

Referring to fig. 11 in combination with fig. 1 to 10, fig. 11 is a schematic view illustrating an arrangement structure of a gas distribution device on a semiconductor processing apparatus according to a preferred embodiment of the invention. As shown in fig. 11, a semiconductor processing apparatus 20 of the present invention includes a substrate support 22 disposed in a reaction chamber 21 for disposing a substrate 30, and the above-described gas distribution device 10. The gas distribution device 10 is disposed opposite to the substrate support 22 (for example, the gas distribution device 10 is disposed above the substrate support 22) and is configured to uniformly introduce the reaction gas, the flow resistance of which is regulated by the gas distribution device 10, into the reaction chamber 21 so as to form a film layer having a uniform thickness on the surface of the substrate 30.

In some embodiments, the gas distribution apparatus 10 may have a shower bottom surface parallel to the surface of the substrate 30 and corresponding in shape, and the reaction gas may be introduced into the reaction chamber 21 through the gas outlet holes 17 (shower ports) uniformly distributed on the shower bottom surface. For example, the spray bottom surface may be the bottom surface of the housing 11 of the gas evening device 10, and the bottom surface of the housing 11 is provided with the gas outlet holes 17.

In some embodiments, the gas distribution apparatus 10 may be a showerhead for introducing a reactant gas into the reaction chamber 21.

In some embodiments, the gas homogenizing apparatus 10 (showerhead) may be the gas homogenizing apparatus 10 provided with one gas diffusion chamber 13 corresponding to fig. 1, and may be used to introduce the homogenized reaction gas into the reaction chamber 21 through the gas homogenizing pipe 12. Fig. 11 shows a gas distribution device 10 provided with a gas diffusion chamber 13.

In some embodiments, the gas homogenizing device 10 (showerhead) may be the gas homogenizing device 10 provided with a plurality of gas diffusion chambers 13, for example, the gas homogenizing device 10 (showerhead) may be the gas homogenizing device 10 provided with two gas diffusion chambers 13 corresponding to fig. 8, and may be used to introduce two reaction gases homogenized through the gas homogenizing pipe 12 into the reaction chamber 21 in a spaced-apart manner.

In some embodiments, the semiconductor process apparatus 20 may be a chemical vapor deposition apparatus, a physical vapor deposition apparatus, a plasma enhanced vapor deposition apparatus, a Metal Organic Chemical Vapor Deposition (MOCVD) apparatus, or the like. For example, the semiconductor process apparatus 20 may be an MOCVD apparatus, and a showerhead provided with two gas diffusion chambers 13 may be employed, and a homogenized, e.g., hydride, reaction gas may be introduced into the reaction chamber 21 through a first gas diffusion chamber 131 located at an upper layer, and a homogenized, e.g., metal organic, reaction gas may be introduced into the reaction chamber 21 through a second gas diffusion chamber 132 located at a lower layer.

The invention is applicable to the reaction chamber 21 with larger size, and the gas flow resistance when the gas flows through the gas homogenizing pipe 12 is regulated by arranging the gas homogenizing pipe 12 in the gas diffusion chamber of the gas homogenizing device and arranging the flow resistance regulating mechanism 15 on the gas homogenizing pipe, so that the flow of the gas when the gas is introduced into the reaction chamber 21 from each gas homogenizing pipe is uniform, the uniformity of the reaction gas during spraying can be effectively improved, and a uniform film layer can be formed on the substrate 30. In addition, the resistance of the reaction gas flowing through the gas homogenizing pipe 12 can be independently adjusted, so that different process requirements can be met, and the shower head does not need to be replaced, thereby saving the cost.

While embodiments of the present invention have been described in detail hereinabove, it will be apparent to those skilled in the art that various modifications and variations can be made to these embodiments. It is to be understood that such modifications and variations are within the scope and spirit of the present invention as set forth in the following claims. Moreover, the invention described herein is capable of other embodiments and of being practiced or of being carried out in various ways.

Claims

1. A gas homogenizing apparatus for inputting a reaction gas into a reaction chamber, comprising:

an air inlet;

a gas diffusion chamber in communication with the gas inlet;

2. The gas homogenizing apparatus of claim 1, wherein the flow resistance adjusting mechanism comprises an inner sleeve which is hermetically and movably penetrated in the gas homogenizing pipe from the upper end, an air inlet hole is arranged at the top end of the inner sleeve, and the reaction gas enters the gas homogenizing pipe through the air inlet hole; the flow resistance adjusting mechanism is defined to be in a structure formed by the flow resistance adjusting mechanism and the corresponding air homogenizing pipe, and the air homogenizing pipe without the flow resistance adjusting mechanism is in a flow passage structure.

3. The gas distribution apparatus according to claim 2, wherein a height of the inner tube disposed on the gas distribution pipe near the gas inlet to be exposed to an upper end of the gas distribution pipe is larger than a height of the inner tube disposed on the gas distribution pipe away from the gas inlet to be exposed to an upper end of the gas distribution pipe.

4. The gas homogenizing apparatus of claim 2 wherein the plurality of gas inlets are disposed on a top surface of the gas diffusion chamber, each gas inlet corresponds to a plurality of gas homogenizing zones, each gas homogenizing zone is a circular area projected on a bottom surface of the gas diffusion chamber with a radius R about a center point of the corresponding gas inlet, each circular area is non-overlapping, wherein R is 0.25R < 0.5R, and R is an equivalent radius of the gas homogenizing apparatus.

5. The gas distribution device according to claim 4, wherein the flow resistance of the flow channel structure decreases at a first slope k1 in a radial direction of a center-directed edge of each circular region at an arbitrary radius in the circular region, and the flow resistance of the flow channel structure not in the circular region is the same as the flow resistance of the flow channel structure at the outermost edge of the circular region.

6. The gas distribution apparatus according to claim 5, wherein the first slope k1 satisfies-H/r.ltoreq.k1 < 0, wherein 0 < H, H being the height of the gas diffusion chamber.

7. The gas homogenizing apparatus of claim 2 wherein the plurality of gas inlets are disposed on a side of the gas diffusion chamber and are located opposite to an outer side of the gas homogenizing pipe, each gas inlet corresponds to a plurality of gas homogenizing pipe regions, each gas homogenizing pipe region is a region where a first circle projected on a bottom surface of the gas diffusion chamber with a radius R intersects the bottom surface of the gas diffusion chamber with a center point of the corresponding gas inlet as a center, and each intersecting region is non-overlapping with each other, wherein R is 0.25 r.ltoreq.r < 0.5R, and R is an equivalent radius of the gas homogenizing apparatus.

8. The gas homogenizing apparatus of claim 7 wherein a second circle projected on the bottom surface of the gas diffusion chamber centered at the center point of the corresponding gas inlet and having a radius L intersects the intersection region on an arc where the flow resistance of each of the flow path structures is the same, and wherein as L increases, the flow resistance of each of the flow path structures on the arc decreases at a second slope k2, the flow resistance of the flow path structures not in the intersection region is the same as the flow resistance of the flow path structures at the outermost edge of the intersection region, wherein a projection of the center point of the corresponding gas inlet on the bottom surface of the gas diffusion chamber is defined as an O point, the arc does not pass through the O point, L is a radial distance between any point on a line between the O point and the center point of the bottom surface of the gas diffusion chamber and the O point, and 0L r.

9. The gas distribution apparatus according to claim 8, wherein the second slope k2 satisfies-H/r.ltoreq.k2 < 0, wherein 0 < H, H being the height of the gas diffusion chamber.

10. The gas homogenizing device of claim 1, wherein a plurality of spray ports are formed in the bottom of the gas diffusion chamber and are communicated with the reaction chamber, and the spray ports are communicated with the gas homogenizing pipe in a one-to-one correspondence manner.

11. The air distribution device according to claim 2, wherein the length of each of the air distribution pipes is the same.

12. The gas distribution apparatus according to claim 2, wherein the length of the gas distribution pipe decreases in a direction approaching the gas inlet port toward a direction separating from the gas inlet port.

13. A gas homogenizing apparatus for inputting a reaction gas into a reaction chamber, comprising:

14. The gas homogenizing apparatus of claim 13, wherein each of the first gas inlets corresponds to a plurality of first gas homogenizing zones, each of the first gas homogenizing zones is a circular area projected on a bottom surface of the first gas diffusion chamber with a radius r1 around a center point of the corresponding first gas inlet, and each of the circular areas is non-overlapping with each other; each second gas inlet corresponds to a plurality of second gas homogenizing pipe areas, each second gas homogenizing pipe area is a region where a first circle projected on the bottom surface of the second gas diffusion chamber with a radius r2 and the bottom surface of the second gas diffusion chamber intersect with each other by taking the center point of the corresponding second gas inlet as the center, and each intersecting region is not overlapped with each other; wherein R1 is more than or equal to 0.25 and less than 0.5R, R2 is more than or equal to 0.25 and less than 0.5R, and R is the equivalent radius of the gas homogenizing device.

15. The gas homogenizing apparatus of claim 14, wherein the flow resistance adjusting mechanism comprises an inner sleeve penetrating into the first gas homogenizing pipe from the upper end in a sealing manner, an air inlet hole is formed in the top end of the inner sleeve, and the reaction gas enters the first gas homogenizing pipe through the air inlet hole; the height of the inner sleeve arranged on the first uniform air pipe in the radial direction of the circle center pointing to the edge of each circular area, which is exposed out of the upper end of the first uniform air pipe, is gradually decreased, and the height of the inner sleeve arranged on the first uniform air pipe, which is not arranged in the circular area and is not exposed out of the upper end of the first uniform air pipe in the most edge of the circular area, is the same.

16. The gas homogenizing apparatus of claim 14, wherein the flow resistance adjusting mechanism comprises an inner sleeve which is sealed and sleeved in the second gas homogenizing pipe from the upper end, an air inlet hole is arranged at the top end of the inner sleeve, and the reaction gas enters the second gas homogenizing pipe through the air inlet hole; the second circle projected on the bottom surface of the second gas diffusion chamber with the center point of the corresponding second gas inlet and the radius L is intersected with an arc line, the heights of the inner sleeves arranged on the second gas diffusion chamber on the arc line are the same, along with the increase of L, the heights of the inner sleeves arranged on the corresponding second gas diffusion chamber on the arc line are gradually decreased, the heights of the inner sleeves arranged on the second gas diffusion chamber on the non-intersecting area are the same as the heights of the inner sleeves arranged on the most edge of the intersecting area on the second gas diffusion chamber, wherein the projection of the center point of the corresponding second gas inlet on the bottom surface of the second gas diffusion chamber is defined as an O point, the distance between the L and the radial point of the second gas diffusion chamber is equal to or less than or equal to 0.

17. A semiconductor processing apparatus comprising a substrate support portion provided in a reaction chamber for providing a substrate, and the gas uniformizing device according to any one of claims 1 to 12, provided opposite to the substrate support portion, for uniformly introducing a reaction gas subjected to flow resistance adjustment by the gas uniformizing device into the reaction chamber to form a film layer having a uniform thickness on a surface of the substrate.

18. A semiconductor processing apparatus comprising a substrate support portion provided in a reaction chamber for providing a substrate, and a gas uniformizing device according to any one of claims 13 to 16, the gas uniformizing device being provided opposite to the substrate support portion for uniformly introducing a reaction gas subjected to flow resistance adjustment by the gas uniformizing device into the reaction chamber to form a film layer having a uniform thickness on a surface of the substrate.