CN220099177U

CN220099177U - Gas spray head

Info

Publication number: CN220099177U
Application number: CN202321478891.2U
Authority: CN
Inventors: 郑冬; 周慧娟
Original assignee: Chuyun Technology Shaoxing Co ltd
Current assignee: Lanhe Technology Shaoxing Co ltd
Priority date: 2023-06-09
Filing date: 2023-06-09
Publication date: 2023-11-28
Anticipated expiration: 2033-06-09

Abstract

The utility model discloses a gas spray head, which is used for inputting reaction gas into a reaction chamber, and comprises the following components: the gas diffusion chambers comprise a top gas diffusion chamber positioned at the uppermost layer and at least one bottom gas diffusion chamber sequentially stacked with the top gas diffusion chamber, the top surface of the top gas diffusion chamber is provided with a gas inlet, and the side wall of each bottom gas diffusion chamber is provided with a gas inlet; the gas homogenizing pipes are respectively arranged in the top gas diffusion chamber and each bottom gas diffusion chamber, and the gas homogenizing pipes in different gas diffusion chambers are mutually isolated and are communicated with the reaction chambers in a one-to-one correspondence manner through the spraying ports; the flow resistance adjusting mechanism is arranged on at least one gas homogenizing pipe and used for adjusting the resistance when the reaction gas flows through the at least one gas homogenizing pipe so as to homogenize the flow of the reaction gas when the gas spray head is introduced, thereby achieving the effect of homogenizing the gas.

Description

Gas spray head

Technical Field

The utility model relates to the technical field of semiconductor equipment, in particular to a gas spray header.

Background

Please refer to fig. 16. A semiconductor processing apparatus (for example, MOCVD apparatus) for forming a film on a substrate (wafer) has a substrate support section 2 in a reaction chamber 1, a substrate 3 is placed on the substrate support section 2, and a gas shower head 4 is provided so as to face the substrate support section 2. The gas shower head 4 is provided with a gas inlet 5, and a reaction gas 6 is introduced into the gas shower head 4 through the gas inlet 5. The bottom of the gas spray header 4 is provided with a spray opening 7, reaction gas enters the gas spray header 4 through the gas inlet 5 and then is introduced into the reaction chamber 1 through the spray opening 7, so that film is formed on the substrate 3, and tail gas is discharged out of the reaction chamber 1 through the gas outlet 8.

With the development of semiconductor technology, the size of the reaction chamber is increasing, and thus the size of the showerhead is also required to be correspondingly increased. When the shower head of the existing semiconductor process equipment is used for dealing with a small-size reaction chamber, the gas homogenizing effect of the shower head on the process gas is relatively uniform. However, when dealing with a large-sized reaction chamber, although the uniformity of the process gas ejected from the gas holes can be improved by adding more gas inlets to the showerhead as the size of the showerhead increases, there is still a problem in that the amount of process gas is small at a position far from the gas inlets because the gas pressure at a position far from the gas inlets is lower than the gas pressure at a position near the gas inlets, resulting in uneven thickness of the thin film formed on the substrate. Particularly, aiming at the supply of metal organic source gas in the MOCVD process, the existing spray header is more difficult to realize homogenization of the metal organic source gas, so that certain influence is brought to the quality of the film forming process.

Disclosure of Invention

The utility model aims to overcome the defects in the prior art and provide a gas spray head.

In order to achieve the above purpose, the technical scheme of the utility model is as follows:

the utility model provides a gas shower head for inputting reaction gas into a reaction chamber, comprising:

The gas diffusion chambers comprise a top gas diffusion chamber positioned at the uppermost layer and at least one bottom gas diffusion chamber sequentially stacked with the top gas diffusion chamber, the top surface of the top gas diffusion chamber is provided with a gas inlet, the side wall of each bottom gas diffusion chamber is provided with a gas inlet, and the bottom of the bottom gas diffusion chamber positioned at the lowermost layer is provided with a plurality of spray ports;

the gas homogenizing pipes are respectively arranged in the top gas diffusion chamber and each bottom gas diffusion chamber, and the gas homogenizing pipes in different gas diffusion chambers are mutually isolated and are communicated with the reaction chambers in a one-to-one correspondence manner through the spraying ports;

and the flow resistance adjusting mechanism is arranged on at least one gas homogenizing pipe and used for adjusting the resistance of the reaction gas when flowing through the at least one gas homogenizing pipe.

Further, at least one of the gas homogenizing pipes comprises a gas guide structure arranged on the side wall, the flow resistance adjusting mechanism is movably arranged in at least one of the gas homogenizing pipes comprising the gas guide structure in a sealing manner from the upper end so that the reaction gas enters the corresponding gas homogenizing pipe through the gas guide structure, and the flow resistance of the corresponding gas homogenizing pipe is adjusted by adjusting the gas guide amount of the gas guide structure by enabling the flow resistance adjusting mechanism to move along the axial direction of the corresponding gas homogenizing pipe.

Further, the flow resistance adjusting mechanism comprises a blocking piece and a fastening piece, wherein the fastening piece is arranged at the top of the corresponding air homogenizing pipe to block the upper end of the corresponding air homogenizing pipe, and the outer diameter of the blocking piece is adaptive to the inner diameter of the corresponding air homogenizing pipe, penetrates through the fastening piece and is movably arranged in a sealing manner corresponding to the air homogenizing pipe.

Further, the plugging piece and the fastening piece are connected in a threaded mode.

Further, the flow resistance adjusting mechanism comprises an inner sleeve which is hermetically and movably arranged in at least one gas homogenizing pipe from the upper end, the top end of the inner sleeve is provided with an air guide structure, so that the reaction gas enters the corresponding gas homogenizing pipe through the air guide structure, and the height of the inner sleeve exposed out of the upper end of the corresponding gas homogenizing pipe is adjusted by enabling the inner sleeve to move up and down in the corresponding gas homogenizing pipe, so that the resistance when the reaction gas flows through the corresponding gas homogenizing pipe is adjusted.

Further, the air inlets are provided with corresponding air homogenizing areas in the corresponding air diffusion chambers, and the air guide amount of the air guide structure on the air homogenizing pipe close to the corresponding air inlet is smaller than the air guide amount of the air guide structure on the air homogenizing pipe far away from the corresponding air inlet in the same air homogenizing area.

Further, the gas inlets are provided with corresponding gas homogenizing pipe areas in the gas diffusion chambers, and the heights of the inner sleeves, which are close to the corresponding gas inlets, on the gas homogenizing pipes and are exposed out of the upper ends of the gas homogenizing pipes are larger than the heights of the inner sleeves, which are far away from the corresponding gas inlets, on the gas homogenizing pipes and are exposed out of the upper ends of the gas homogenizing pipes, in the same gas homogenizing pipe area.

Further, in the top gas diffusion chamber and/or the bottom gas diffusion chamber, the gas inlets comprise a plurality of gas inlets, the gas homogenizing pipe area corresponding to each gas inlet is an intersection area formed between a circular area projected on the bottom surface of the gas diffusion chamber and the bottom surface of the gas diffusion chamber, wherein the circular area is positioned by taking the central point of the corresponding gas inlet as the center, the radius is R, and the intersection areas are not overlapped, wherein R is more than or equal to 0.25 and less than 0.5R, and R is the equivalent radius of the gas spray head.

Further, at least one gas homogenizing ring is wound in the bottom gas diffusion chamber and is positioned between the area where the plurality of gas homogenizing pipes are positioned and the inner wall of the bottom gas diffusion chamber, the height of the gas homogenizing ring is more than or equal to 0.5H, H is the height of the bottom gas diffusion chamber where the gas homogenizing ring is positioned, and/or the height of the gas homogenizing ring is not higher than the height of the gas homogenizing pipe in the bottom gas diffusion chamber where the gas homogenizing ring is positioned.

Further, the gas spray head is applied to a metal organic chemical vapor deposition device, a substrate supporting part for arranging a substrate is arranged in the reaction chamber, the gas spray head is arranged opposite to the substrate supporting part, a first reaction gas is introduced into the top gas diffusion chamber, a second reaction gas is introduced into at least one of the bottom gas diffusion chambers, and the gas spray head is used for uniformly introducing the reaction gas subjected to flow resistance adjustment by the gas spray head into the reaction chamber so as to form a film layer with uniform thickness on the surface of the substrate.

According to the utility model, the top gas diffusion chamber positioned at the uppermost layer and at least one bottom gas diffusion chamber which is sequentially stacked with the top gas diffusion chambers are arranged on the gas spray head, and the top gas diffusion chamber and each bottom gas diffusion chamber are respectively provided with a plurality of gas homogenizing pipes, so that the gas homogenizing pipes in different gas diffusion chambers are mutually isolated and are communicated with the reaction chamber in a one-to-one correspondence manner through a plurality of spray ports arranged at the bottom of the bottom gas diffusion chamber positioned at the lowermost layer, and thus, the resistance when the reaction gas flows through at least one gas homogenizing pipe can be regulated by arranging a flow resistance regulating mechanism on at least one gas homogenizing pipe, and the flow of the reaction gas when the gas spray head is communicated by each gas homogenizing pipe can be uniformized, so that the effect of homogenizing gas is achieved.

When the gas spray head is applied to a metal organic chemical vapor deposition device, the reaction gas subjected to flow resistance adjustment by the gas spray head can be uniformly introduced into the reaction chamber, so that a film layer with uniform thickness can be formed on the surface of the substrate. And because the resistance of the reactant gas flowing through each gas homogenizing pipe can be independently set, the gas homogenizing pipe can meet different process requirements without changing a gas spray head, and the cost is saved.

Drawings

FIG. 1 is a schematic view of a gas shower head according to a preferred embodiment of the present utility model;

FIG. 2 is an enlarged schematic view of a portion of the gas shower head of FIG. 1;

FIG. 3 is a schematic view of an inlet arrangement of the gas shower of FIG. 1;

FIG. 4 is a schematic view showing the structure of a first flow resistance adjusting mechanism according to a preferred embodiment of the present utility model;

FIG. 5 is a schematic view of a top gas diffusion chamber incorporating a first flow resistance adjustment mechanism according to a preferred embodiment of the present utility model;

FIG. 6 is a schematic view of a top inlet arrangement according to a preferred embodiment of the present utility model;

FIG. 7 is a schematic diagram showing a distribution pattern of the top inlet corresponding to the uniform air pipe region according to a preferred embodiment of the present utility model;

FIG. 8 is a schematic view of a bottom gas diffusion chamber incorporating a first flow resistance adjustment mechanism according to a preferred embodiment of the present utility model;

FIG. 9 is a schematic view showing a side air inlet structure according to a preferred embodiment of the present utility model;

FIG. 10 is a schematic diagram showing a distribution pattern of side air inlets corresponding to the uniform air pipe region according to a preferred embodiment of the present utility model;

FIG. 11 is a schematic diagram of flow resistance adjustment for the gas equalization pipe in the gas equalization pipe region of FIG. 10;

FIG. 12 is a schematic view showing the structure of a second flow resistance adjusting mechanism according to a preferred embodiment of the present utility model;

FIG. 13 is a schematic view of a top gas diffusion chamber incorporating a second flow resistance adjustment mechanism according to a preferred embodiment of the present utility model;

FIG. 14 is a schematic view of a bottom gas diffusion chamber incorporating a second flow resistance adjustment mechanism according to a preferred embodiment of the present utility model;

FIG. 15 is a schematic view showing the arrangement of a gas shower head on a metal organic chemical vapor deposition apparatus according to a preferred embodiment of the present utility model;

fig. 16 is a schematic view showing a structure of a conventional semiconductor processing apparatus for forming a film on a substrate.

Detailed Description

For the purpose of making the objects, technical solutions and advantages of the embodiments of the present utility model more apparent, the technical solutions in the embodiments of the present utility model will be clearly and completely described below, and it is apparent that the described embodiments are some embodiments of the present utility model, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the utility model without making any inventive effort, are intended to be within the scope of the utility model. Unless otherwise defined, technical or scientific terms used herein should be given the ordinary meaning as understood by one of ordinary skill in the art to which this utility model belongs. As used herein, the word "comprising" and the like means that elements or items preceding the word are included in the element or item listed after the word and equivalents thereof without precluding other elements or items.

The utility model relates to a gas spray head, which is used for inputting reaction gas into a reaction chamber, and comprises the following components:

According to the utility model, the top gas diffusion chamber positioned at the uppermost layer and at least one bottom gas diffusion chamber which is sequentially stacked with the top gas diffusion chambers are arranged on the gas spray header, and a plurality of gas homogenizing pipes are respectively arranged on the top gas diffusion chamber and each bottom gas diffusion chamber, so that the gas homogenizing pipes are mutually isolated and are communicated with the reaction chamber in a one-to-one correspondence manner through a plurality of spray ports arranged at the bottom of the bottom gas diffusion chamber, and thus, the resistance when the reaction gas flows through at least one gas homogenizing pipe can be regulated by arranging a flow resistance regulating mechanism on at least one gas homogenizing pipe, and the flow of the reaction gas when the gas spray header is communicated by each gas homogenizing pipe can be uniform, so that the effect of homogenizing gas is achieved.

When the gas spray head is applied to a metal organic chemical vapor deposition device, the reaction gas subjected to flow resistance adjustment by the gas spray head can be uniformly introduced into the reaction chamber, so that a film layer with uniform thickness can be formed on the surface of the substrate. And because the resistance of the reaction gas flowing through each gas homogenizing pipe can be independently adjusted, the gas shower head can be suitable for different process requirements without changing the gas shower head, and the cost is saved.

The following describes the embodiments of the present utility model in further detail with reference to the accompanying drawings.

Referring to fig. 1-3, fig. 1 is a schematic structural diagram of a gas shower head according to a preferred embodiment of the present utility model; FIG. 2 is an enlarged schematic view of a portion of the gas shower head of FIG. 1; fig. 3 is a schematic view of an air inlet arrangement structure of the air shower head in fig. 1.

As shown in fig. 1 to 3, a gas showerhead according to the present utility model may be used to homogenize a reaction gas introduced into a reaction chamber of a Metal Organic Chemical Vapor Deposition (MOCVD) apparatus so that the processed reaction gas may be introduced into the reaction chamber at a uniform flow rate, thereby forming a film layer having a uniform thickness on a surface of a substrate, such as a semiconductor wafer.

The gas shower head 10 of the present utility model includes a plurality of gas diffusion chambers 13 enclosed within a housing 11. The gas diffusion chamber 13 comprises a top gas diffusion chamber 131 positioned at the uppermost layer and at least one bottom gas diffusion chamber 132 sequentially stacked with the top gas diffusion chamber 131, and a plurality of spray openings 17 are arranged at the bottom of the bottom gas diffusion chamber 132 positioned at the lowermost layer; the gas diffusion chambers 13 are isolated from each other, and in some embodiments, two adjacent gas diffusion chambers may be separated by a separator 19 to form two isolated gas diffusion chambers 13. The housing 11 may be disposed directly above a substrate to be processed, and has a bottom surface parallel to the substrate surface and corresponding in shape. For example, when the substrate is circular, the housing 11 will also correspond to a bottom surface having a circular shape that is sized appropriately. The bottom surface of the housing 11 also serves as the bottom surface of the bottom gas diffusion chamber 13 located at the lowermost layer.

Each gas diffusion chamber 13 may be provided with one to a plurality of gas inlets 14. The top surface of the top gas diffusion chamber 131 is provided with gas inlets (141, 142,143, 144), and the side wall of each bottom gas diffusion chamber 132 is provided with gas inlets (141 ',142',143', 144'), so that different reaction gases can be introduced into the corresponding gas diffusion chambers 13 through different gas inlets 14.

The gas homogenizing pipes 12 are respectively arranged in the top gas diffusion chamber 131 and each bottom gas diffusion chamber 132, and the gas homogenizing pipes 12 in different gas diffusion chambers 13 are mutually isolated and are communicated with the reaction chambers in a one-to-one correspondence through the spraying ports 17. Specifically, the gas homogenizing pipes 12 in the gas diffusion chambers 13 located in the upper layer of the bottom gas diffusion chamber 132 located in the lowest layer respectively penetrate downward to the bottom surface of the bottom gas diffusion chamber 132 located in the lowest layer in an isolated manner, are also isolated from the gas homogenizing pipes 12 in the bottom gas diffusion chamber 132 located in the lowest layer, and finally are communicated with the gas shower head 10 together through the shower openings 17 respectively corresponding to and located on the bottom surface of the housing 11.

Each of the gas homogenizing pipes 12 may be vertically disposed on the bottom surface of the gas diffusion chamber 13, and an array of the gas homogenizing pipes 12 may be formed according to a certain rule. For example, each of the gas homogenizing pipes 12 in the array of gas homogenizing pipes 12 may be uniformly distributed on the bottom surface of the gas diffusion chamber 13 in a centrosymmetric manner; alternatively, the gas homogenizing pipes 12 in the array of gas homogenizing pipes 12 may be arranged in rows and columns and uniformly distributed on the bottom surface of the gas diffusion chamber 13. Other suitable forms of arrays of chimneys 12 may be formed.

In some embodiments, the gas homogenizing pipe 12 provided in each gas diffusion chamber 13 is welded to the bottom of the lowermost bottom gas diffusion chamber 132 in one-to-one correspondence with the spray ports 17 provided on the bottom surface of the lowermost bottom gas diffusion chamber 132, so as to communicate with the reaction chamber.

Since the gas pressure in the gas diffusion chamber 13 is lower at the position far from the gas inlet 14 than at the position near the gas inlet 14, it is necessary to adjust the resistance of the reaction gas flowing through the gas homogenizing pipe 12 so that the flow resistance of the gas homogenizing pipe 12 near the gas inlet 14 is larger than the flow resistance of the gas homogenizing pipe 12 far from the gas inlet 14, and more preferably, the flow resistance of the gas homogenizing pipe 12 is decreased in the direction near the gas inlet 14 to the direction far from the gas inlet 14, so that the resistance of the reaction gas flowing through the gas homogenizing pipe 12 near the gas inlet 14 is larger than the resistance of the reaction gas flowing through the gas homogenizing pipe 12 far from the gas inlet 14, and the uniformity of the reaction gas flowing into the reaction chamber is improved.

Thus, a flow resistance adjustment mechanism 15 is provided to at least one of the gas homogenizing pipes 12 to adjust the resistance of the reaction gas flowing through the at least one gas homogenizing pipe 12.

In the following, two gas diffusion chambers 13 stacked one above the other are provided in the housing 11 of the gas shower head 10.

Please refer to fig. 1-3. The gas shower head 10 includes a top gas diffusion chamber 131 and a bottom gas diffusion chamber 132 stacked one above the other, the top gas diffusion chamber 131 and the bottom gas diffusion chamber 132 being separated by a partition 19 to form two gas diffusion chambers 13 isolated from each other, and a plurality of first shower openings 171 and a plurality of second shower openings 172 communicating with the reaction chamber are provided at the bottom of the bottom gas diffusion chamber 132 (at the bottom of the housing 11).

The first gas inlets are disposed on the top surface of the top gas diffusion chamber 131 for inputting the first reaction gas into the top gas diffusion chamber 131, and the second gas inlets are disposed on the side surface of the bottom gas diffusion chamber 132 for inputting the second reaction gas into the bottom gas diffusion chamber 132. Illustratively, for a gas showerhead 10 applied to a nitride MOCVD apparatus, the first reactant gas comprises a Hydride, such as NH ₃ The second reactant gas includes a metal organic source, such as TMGa. In some embodiments, the plurality of first gas inlets may be uniformly distributed over the top surface of the top gas diffusion chamber 131, e.g., the plurality of first gas inlets may be uniformly distributed over the top surface of the top gas diffusion chamber 131 about a central axis of the top gas diffusion chamber 131; in other embodiments, at least 2 of the plurality of first gas inlets are evenly distributed over the top gas diffusion chamber 131 about a central axis of the top gas diffusion chamber 131; in still other embodiments, the plurality of first gas inlets are flared at the top gas The top surface of the chamber 131 is irregularly distributed, depending on the actual process. Also, in some embodiments, the plurality of second gas inlets may be uniformly distributed on the side of the bottom gas diffusion chamber 132, e.g., the plurality of second gas inlets may be in the same horizontal plane on the side of the bottom gas diffusion chamber 132 and uniformly distributed about the central axis of the bottom gas diffusion chamber 132; in other embodiments, at least 2 of the plurality of second gas inlets are located at the same level on the side of the bottom gas diffusion chamber 132 and are evenly distributed about the central axis of the bottom gas diffusion chamber 132; in still other embodiments, the plurality of second gas inlets are irregularly distributed on the sides of the bottom gas diffusion chamber 132, depending on the actual process.

The gas distribution pipe 12 may include a plurality of first gas distribution pipes 121 disposed in a top gas diffusion chamber 131, and a plurality of second gas distribution pipes 122 disposed in a bottom gas diffusion chamber 132. The lower end of the first gas homogenizing pipe 121 may penetrate downward from the partition 19 located on the bottom surface of the top gas diffusion chamber 131 to the bottom gas diffusion chamber 132, and communicate with the first spraying port 171 provided on the bottom of the bottom gas diffusion chamber 132, respectively, to input the first reaction gas into the reaction chamber. The second gas homogenizing pipe 122 is isolated from the first gas homogenizing pipe 121 and communicates with the second shower port 172 to input the second reaction gas into the reaction chamber.

A flow resistance adjustment mechanism 15 (not shown) is provided in at least one of the first gas homogenizing pipe 121 of the top gas diffusion chamber 131 and the second gas homogenizing pipe 122 of the bottom gas diffusion chamber 132 to adjust the resistance of the reactant gas flowing through the first gas homogenizing pipe 121 and/or the second gas homogenizing pipe 122 so that the resistance of the reactant gas flowing through the first gas homogenizing pipe 121 near the corresponding gas inlet 14 is greater than the resistance of the reactant gas flowing through the first gas homogenizing pipe 121 far from the corresponding gas inlet 14, and/or so that the resistance of the reactant gas flowing through the second gas homogenizing pipe 122 near the corresponding gas inlet 14 is greater than the resistance of the reactant gas flowing through the second gas homogenizing pipe 122 far from the corresponding gas inlet 14, and more preferably so that the resistance of the reactant gas flowing through the first gas homogenizing pipe 121 is decreased in a direction near the first gas inlet to a direction away from the first gas inlet, and/or so that the resistance of the reactant gas flowing through the second gas homogenizing pipe 122 is decreased in a direction near the second gas inlet to a direction away from the second gas inlet.

When the flow resistance adjusting means 15 is provided in the first gas homogenizing pipe 121, the resistance of the first reaction gas flowing through the first gas homogenizing pipe 121 is adjusted by the flow resistance adjusting means 15, thereby adjusting the uniformity of the first reaction gas supplied into the reaction chamber. When the flow resistance adjusting means 15 is provided in the second uniform gas pipe 122, the resistance of the second reaction gas flowing through the second uniform gas pipe 122 is adjusted by the flow resistance adjusting means 15, thereby adjusting the uniformity of the second reaction gas supplied into the reaction chamber.

Fig. 4 is a schematic structural view of a first flow resistance adjusting mechanism according to a preferred embodiment of the present utility model.

Referring to fig. 4, at least one gas homogenizing pipe 12 includes a gas guiding structure disposed on a side wall, and the gas guiding structure may be a plurality of gas inlets 16 disposed on the side wall of the gas homogenizing pipe 12 along an axial direction, but the gas guiding structure is not limited to the gas inlets 16, and may be a groove, a slit, or the like, as long as the structure can enable the gas homogenizing pipe 12 to communicate with the gas diffusion chamber. The flow resistance adjusting mechanism 15 is used to adjust the resistance of the reaction gas flowing through the gas homogenizing pipe 12 by using the gas guiding structure as a plurality of gas inlets 16 axially provided on the sidewall of the gas homogenizing pipe 12.

Each air inlet hole 16 is communicated with the interior of the air homogenizing pipe 12, and a flow resistance adjusting mechanism 15 is hermetically and movably arranged in the air homogenizing pipe 12 from the upper end of the air homogenizing pipe 12. Since the upper end of the gas homogenizing pipe 12 is sealed by the flow resistance adjusting mechanism 15, the reaction gas introduced into the gas diffusion chamber 13 from the gas inlet 14 is diffused into the whole chamber of the gas diffusion chamber 13 under the pressure, and enters the gas homogenizing pipe 12 through the gas inlet 16 provided on the gas homogenizing pipe 12, so that the reaction gas can be discharged from the housing 11 (gas shower head 10) through the shower port 17 and enter the reaction chamber.

In this embodiment, the flow resistance adjusting mechanism 15 may be disposed in the air homogenizing pipe 12 in a manner of forming a dynamic seal with the pipe wall of the air homogenizing pipe 12. The air guide amount of the air inlet hole 16 can be adjusted by axially moving the flow resistance adjusting mechanism 15 in the air homogenizing pipe 12 to adjust the number of the air inlet holes 16 which are not blocked by the flow resistance adjusting mechanism 15 on the side wall of the air homogenizing pipe 12, so as to adjust the flow resistance of the air homogenizing pipe 12. Wherein, by making the flow resistance adjusting mechanism 15 move downwards, more air inlets 16 on the side wall of the air homogenizing pipe 12 are blocked so as to increase the flow resistance of the air homogenizing pipe 12; conversely, by moving the flow resistance adjusting mechanism 15 upwards, more air inlets 16 are exposed on the side wall of the air homogenizing pipe 12, so as to reduce the flow resistance of the air homogenizing pipe 12, that is, the flow resistance of the air homogenizing pipe 12 is inversely proportional to the number of air inlets 16 on the air homogenizing pipe 12 which are not blocked by the flow resistance adjusting mechanism 15.

In some embodiments, the flow resistance adjustment mechanism 15 is adjusted such that the number of air inlets 16 on the air distribution pipe 12 near the air inlet 14 that are not blocked by the flow resistance adjustment mechanism 15 is smaller than the number of air inlets 16 on the air distribution pipe 12 far from the air inlet 14 that are not blocked by the flow resistance adjustment mechanism 15, so that the resistance of the reactant gas flowing through the air distribution pipe 12 near the air inlet 14 is greater than the resistance of the reactant gas flowing through the air distribution pipe 12 far from the air inlet 14, and the uniformity of the reactant gas flowing into the reaction chamber is improved. Specifically, by adjusting the up-down position of the flow resistance adjusting mechanism 15 in the air homogenizing pipe 12, the air homogenizing pipe 12 closest to the air inlet 14 has the least number of air inlets 16 not blocked by the flow resistance adjusting mechanism 15, and the air homogenizing pipe 12 farthest from the air inlet 14 has the most number of air inlets 16 not blocked by the flow resistance adjusting mechanism 15, and each air homogenizing pipe 12 between the two has the sequentially increasing number of air inlets 16 not blocked by the flow resistance adjusting mechanism 15. In this way, the flow resistance of the gas in each of the gas distribution pipes 12 can be decreased in a direction approaching the gas inlet 14 to a direction separating from the gas inlet 14, so that the flow rate of the reaction gas finally discharged from each of the shower ports 17 can be made uniform. In this way, by adjusting the flow resistance of the duct through which the gas introduced into the gas distribution pipe 12 from the gas diffusion chamber 13 flows by the cooperation between the flow resistance adjusting mechanism 15 and the gas inlet hole 16, the flow rate of the gas introduced into the bottom surface of the gas shower head 10 from each gas distribution pipe 12 can be made uniform.

In some embodiments, the flow resistance adjusting mechanism 15 includes a blocking member and a fastening member, the fastening member is disposed at the top of the air homogenizing pipe 12 to block the upper end of the air homogenizing pipe 12, and the outer diameter of the blocking member is adapted to the inner diameter of the air homogenizing pipe 12, penetrates the fastening member, and is movably disposed in a sealing manner with the air homogenizing pipe 12. Illustratively, the plugging member includes a screw 151, the fastening member includes a nut 152, the nut 152 is in threaded engagement with the screw 151, the screw 151 is disposed through the air homogenizing pipe 12 to plug the air inlet hole 16, the nut 152 is disposed at an upper end of the air homogenizing pipe 12 to plug an upper end of the air homogenizing pipe 12, an outer diameter of the screw 151 is adapted to an inner diameter of the air homogenizing pipe 12, and is disposed through the nut 152 and the air homogenizing pipe 12, so that a dynamic sealing engagement is formed with the corresponding air homogenizing pipe 12, and an up-down movement position of the screw 151 in the air homogenizing pipe 12 can be adjusted by rotating the screw 151, so that the number of air inlet holes 16 on the air homogenizing pipe 12 which are not plugged by the flow resistance adjusting mechanism 15 is adjusted according to a process requirement.

In this embodiment, the gas inlets 14 have respective gas homogenizing regions in the corresponding gas diffusion chambers 13, and the gas guiding amount of the gas guiding structure on the gas homogenizing tube 12 close to the corresponding gas inlet 14 is smaller than the gas guiding amount of the gas guiding structure on the gas homogenizing tube 12 far from the corresponding gas inlet 14 in the same gas homogenizing region.

Fig. 5 shows a schematic structural view of a top gas diffusion chamber comprising the first flow resistance adjustment mechanism. In this embodiment, the number of the gas inlets 14 on the top gas diffusion chamber 131 is one to more. When the number of the air inlets 14 is one, each air homogenizing pipe 12 in the top air diffusing chamber 131 may form an air homogenizing pipe area, and the air guiding amount of the air inlet hole 16 on the air homogenizing pipe 12 close to the air inlet 14 is smaller than the air guiding amount of the air inlet hole 16 on the air homogenizing pipe 12 far from the corresponding air inlet 14 by adjusting the flow resistance adjusting mechanism 15 in the air homogenizing pipe area, and more preferably, the air guiding amount of the air inlet hole 16 on each air homogenizing pipe 12 is increased along the direction close to the air inlet 14 far from the air inlet 14.

In some embodiments, when the number of the gas inlets 14 on the top gas diffusion chamber 131 is plural, the plural gas inlets 14 are disposed on the top surface of the top gas diffusion chamber 131 and are located above the gas homogenizing pipe 121, and each gas inlet 14 corresponds to plural gas homogenizing pipe areas, and each gas homogenizing pipe area is an intersection area formed between a circular area projected on the bottom surface of the top gas diffusion chamber 131 and the bottom surface of the top gas diffusion chamber 131 where the circular area is located, with the center point of the corresponding gas inlet 14 as a center, and the radius is r. The circular areas are not overlapped with each other, wherein R is more than or equal to 0.25R and less than 0.5R, and R is the equivalent radius of the gas spray header. In some embodiments, the equivalent radius of the gas showerhead is the radius of the bottom surface of the top gas diffusion chamber 131. In the same air homogenizing pipe region, the air guide amount of the air inlet holes 16 on the air homogenizing pipe 12 close to the corresponding air inlet 14 is smaller than the air guide amount of the air inlet holes 16 on the air homogenizing pipe 12 far away from the corresponding air inlet 14.

6-7, the number of the gas inlets 14 is 4, including the gas inlets 141-144, which are uniformly arranged on the top surface of the top gas diffusion chamber 131 (i.e., the top surface of the housing 11), and the 4 gas inlets 141-144 correspond to the 4 first uniform gas distribution areas A1-A4. The gas inlet 141 corresponds to a first gas homogenizing pipe area A1, the first gas homogenizing pipe area A1 is a circular area projected on the bottom surface of the top gas diffusion chamber 131 by taking a center point of the gas inlet 141 as a center and a radius r, the gas inlet 142 corresponds to a first gas homogenizing pipe area A2, the first gas homogenizing pipe area A2 is a circular area projected on the bottom surface of the top gas diffusion chamber 131 by taking a center point of the gas inlet 142 as a center and a radius r, the gas inlet 143 corresponds to a first gas homogenizing pipe area A3, the first gas homogenizing pipe area A3 is a circular area projected on the bottom surface of the top gas diffusion chamber 131 by taking a center point of the gas inlet 143 as a center and a radius r, the gas inlet 144 corresponds to a first gas homogenizing pipe area A4, and the first gas homogenizing pipe area A4 is a circular area projected on the bottom surface of the top gas diffusion chamber 131 by taking a center point of the gas inlet 144 as a center and a radius r. The first gas homogenizing pipe areas A1-A4 are not overlapped with each other, wherein R is more than or equal to 0.25 and less than or equal to 0.5R, and R is the equivalent radius of the gas spray header. Each first homogenizing zone comprises a plurality of homogenizing tubes 12, and regions not in the circular region (as illustrated by the regions B1-B5) also comprise a plurality of homogenizing tubes 12. In some embodiments, the equivalent radius of the gas showerhead is the radius of the bottom surface of the top gas diffusion chamber 13.

The flow resistance adjusting means 15 is adjusted to adjust the number of the air intake holes 16 on the air homogenizing pipe 12 which are not blocked by the flow resistance adjusting means 15, so that the number of the air intake holes 16 on the air homogenizing pipe 12 which are not blocked by the flow resistance adjusting means 15 increases with a first slope k1 in the radial direction of the edge along the center of the circular area on any radius in each circular area, and the number of the air intake holes 16 on the air homogenizing pipe 12 which are not blocked by the flow resistance adjusting means 15 at the position where the circular area is covered and the position where the circular area is most edge are adjusted to be the same, so that the flow resistance of the air homogenizing pipe 12 which are not in the circular area is adjusted to be the same as the flow resistance of the air homogenizing pipe 12 at the position where the circular area is most edge. In some embodiments, the first slope k1 satisfies 0 < k1 < H/r, where 0 < H1, H1 is the height of the top gas diffusion chamber 131.

It will be appreciated that the gas flow resistance of the gas distribution tube 12 at the extreme edge of any one of the first gas distribution tube regions is relatively minimal, and that the gas flow resistance of the gas distribution tube 12 between any two adjacent first gas distribution tube regions is also relatively minimal as is the gas flow resistance of the gas distribution tube 12 at the extreme edge of the first gas distribution tube region (e.g., where the number of gas inlet holes 16 on the gas distribution tube 12 that are not blocked by the flow resistance adjustment mechanism 15 is the greatest, as shown in fig. 5).

Referring to fig. 7, taking the case that the air inlet 141 corresponds to the first uniform air pipe A1 as an example, in a radial direction from a projection O1 of a center point of the air inlet 141 on the bottom surface of the top gas diffusion chamber 131 to an edge of the first uniform air pipe A1, the number of air inlets 16 on the uniform air pipe 12 in the first uniform air pipe A1, which are not blocked by the flow resistance adjusting mechanism 15, is gradually increased, so that the flow resistance of the uniform air pipe 12 is gradually reduced. In an extreme case, it may be assumed that the air intake holes 16 on the air homogenizing pipe 12 at the point O1 are all blocked by the flow resistance adjusting mechanism 15, so that the flow resistance of the air homogenizing pipe 12 is at a maximum here, which is equivalent to that the length of the portion of the air homogenizing pipe 12 occupied by the air intake holes 16 on the air homogenizing pipe 12 not blocked by the flow resistance adjusting mechanism 15 is at a minimum of 0, and that the air intake holes 16 on the air homogenizing pipe 12 are all exposed at the extreme edge, so that the flow resistance of the air homogenizing pipe 12 is at a minimum here, and that the length of the portion of the air homogenizing pipe 12 occupied by the air intake holes 16 on the air homogenizing pipe 12 not blocked by the flow resistance adjusting mechanism 15 is at a minimum H (which is equivalent to that of the air homogenizing pipe 12 here), so that the maximum first slope H/r can be calculated, where 0 < H1 (where the longest length of the air homogenizing pipe 12 is smaller than the height H1 of the top gas diffusion chamber 13). However, the air intake holes 16 on the air homogenizing pipe 12 at the point O1 that are not blocked by the flow resistance adjusting mechanism 15 cannot be 0, and therefore, in the radial direction from the point O1 toward the edge of the first air homogenizing pipe region A1, the number of air intake holes 16 on the air homogenizing pipe 12 in the first air homogenizing pipe region A1 that are not blocked by the flow resistance adjusting mechanism 15 may be increased by any slope between 0 < k1 < h/r.

The other first uniform gas pipe areas A2-A4 are similar to the first uniform gas pipe area A1, and will not be described again here. In order to avoid abrupt changes in the flow resistance of the air distribution pipe 12 at the boundary, resulting in uneven air flow, the number of air intake holes 16 not blocked by the flow resistance adjusting mechanism 15 on the plurality of air distribution pipes 12 in the region of the circular region (as illustrated in the region of the reference marks B1 to B5) is adjusted to be the same as that at the extreme edge of the circular region.

Referring to fig. 8, a schematic diagram of a bottom gas diffusion chamber 132 including the first flow resistance adjusting mechanism 15 at the lowest layer is shown, in which the penetrating structure of the gas homogenizing pipe 12 in the top gas diffusion chamber 131 in the bottom gas diffusion chamber 132 is omitted, and the arrangement structure of the shower opening 17 corresponding to the gas homogenizing pipe 12 in the top gas diffusion chamber 131 at the bottom surface of the bottom gas diffusion chamber 132 at the lowest layer is omitted. The gas inlet 14 is provided on the side of the bottom gas diffusion chamber 132, and since the gas pressure in the bottom gas diffusion chamber 132 is also lower away from the gas inlet 14 than near the gas inlet 14, it is necessary to adjust the flow resistance of the gas homogenizing pipe 12 positioned therein.

In this embodiment, the number of the gas inlets 14 provided on the side of the bottom gas diffusion chamber 132 is one to more. When the number of the air inlets 14 is one, each air homogenizing pipe 12 can form an air homogenizing pipe area, and the number of the air inlets 16 which are not blocked by the flow resistance adjusting mechanism 15 on the air homogenizing pipe 12 close to the air inlet 14 is smaller than the number of the air inlets 16 which are not blocked by the flow resistance adjusting mechanism 15 on the air homogenizing pipe 12 far from the air inlet 14 through the adjustment of the flow resistance adjusting mechanism 15, so that the air flow resistance in each air homogenizing pipe 12 is gradually decreased along the direction of approaching the air inlet 14 to the direction of separating from the air inlet 14.

In other embodiments, when the number of the gas inlets 14 is plural, the plural gas inlets 14 are disposed on the side surface of the bottom gas diffusion chamber 132 and are located opposite to the outer side of the gas homogenizing pipe 12, each gas inlet 14 corresponds to plural gas homogenizing pipe areas, each gas homogenizing pipe area is an area where a first circle projected on the bottom surface of the bottom gas diffusion chamber 132 with a radius R with respect to a center point of the corresponding gas inlet 14 intersects with the bottom surface of the bottom gas diffusion chamber 132, and each intersecting area is not overlapped with each other, where R is 0.25R < 0.5R, and R is an equivalent radius of the gas showerhead. In some embodiments, the equivalent radius of the gas showerhead is the radius of the bottom surface of the bottom gas diffusion chamber 13.

For example, referring to fig. 9 to 10, the number of the gas inlets 14 is 4, including the gas inlets 141'-144', which are uniformly arranged on the side surface of the bottom gas diffusion chamber 132 (i.e., the side surface of the housing 11), and the 4 gas inlets 141'-144' correspond to the 4 second gas distribution areas A1'-A4'. The gas inlet 141 'corresponds to a second gas homogenizing pipe area A1', and the second gas homogenizing pipe area A1 'is a region where a first circle c1 projected on the bottom surface of the bottom gas diffusion chamber 132 with a radius r with respect to a center point of the corresponding gas inlet 141' intersects with the bottom surface of the bottom gas diffusion chamber 132, as shown by a hatched area in fig. 10; the gas inlet 142 'corresponds to a second gas homogenizing pipe area A2', and the second gas homogenizing pipe area A2 'is an area where a first circle c2 projected on the bottom surface of the bottom gas diffusion chamber 132 with a radius r with respect to a center point of the corresponding gas inlet 142' intersects with the bottom surface of the bottom gas diffusion chamber 132; the gas inlet 143 'corresponds to a second gas homogenizing pipe area A3', and the second gas homogenizing pipe area A3 'is an area where a first circle c3 projected on the bottom surface of the bottom gas diffusion chamber 132 with a radius r with respect to a center point of the corresponding gas inlet 143' intersects with the bottom surface of the bottom gas diffusion chamber 132; the gas inlet 144 'corresponds to a second gas homogenizing pipe area A4', and the second gas homogenizing pipe area A4 'is an area where a first circle c4 projected on the bottom surface of the bottom gas diffusion chamber 132 with a radius r with respect to a center point of the corresponding gas inlet 144' intersects with the bottom surface of the bottom gas diffusion chamber 132. The second even gas pipe areas A1'-A4' are not overlapped with each other, wherein R is more than or equal to 0.25 and less than 0.5R, and R is the equivalent radius of the gas spray header. In some embodiments, the equivalent radius of the gas showerhead is the radius of the bottom surface of the bottom gas diffusion chamber 132. Each second homogenizing zone includes a plurality of homogenizing tubes 12 therein, and regions not within the intersecting region (as illustrated by the regions B1 '-B5') also include a plurality of homogenizing tubes 12.

The second circle projected on the bottom surface of the bottom gas diffusion chamber 132 with the center point of the corresponding gas inlet 14 as the center and the radius L intersects with the intersecting area on an arc line, and the number of the gas inlet holes 16 on the gas homogenizing pipe 12 which are not blocked by the flow resistance adjusting mechanism 15 is adjusted so that the number of the gas inlet holes 16 on the gas homogenizing pipe 12 which are not blocked by the flow resistance adjusting mechanism 15 on the arc line is the same, and as L increases, the number of the gas inlet holes 16 on the gas homogenizing pipe 12 which are not blocked by the flow resistance adjusting mechanism 15 on the arc line increases with the second slope k2, the number of the gas inlet holes 16 on the gas homogenizing pipe 12 which are not blocked by the flow resistance adjusting mechanism 15 at the edge of the intersecting area is adjusted to be the same, wherein, the projection of the center point of the corresponding gas inlet 14 on the bottom surface of the bottom gas diffusion chamber 132 on the arc line is defined as an O point, the distance L between the non-arc line and the bottom surface 132 is equal to or less than or equal to the radial distance r between the O point and the bottom surface 132.

It will be appreciated that the gas flow resistance of the gas homogenizing pipe 12 at the most edge of any one of the second gas homogenizing pipe regions, i.e. the arc line which does not pass through the O-point at the intersection of the corresponding first circle and the corresponding intersection region, is relatively minimum, and the gas flow resistance of the gas homogenizing pipe 12 between any two adjacent second gas homogenizing pipe regions is also relatively minimum as is the gas flow resistance of the gas homogenizing pipe 12 at the most edge (e.g. the number of gas inlet holes 16 on the gas homogenizing pipe 12 which are not blocked by the flow resistance adjusting mechanism 15 is the greatest).

Referring to fig. 10-11, taking the projection of the center point of the gas inlet 141' on the bottom surface of the bottom gas diffusion chamber 132 corresponding to the second gas homogenizing zone A1' as an O1' point, the distance between any point M on the line O1' N between the O1' point and the center point N of the bottom surface of the bottom gas diffusion chamber 132 and the O1' point is L, where 0L r is equal to or less than r, and the radius L of the line is L, a second circle is formed on the bottom surface of the bottom gas diffusion chamber 132 by taking the O1' point as a center, and intersects with the second gas homogenizing zone A1' in an arc P1P2 that does not pass through the O1' point, and the flow resistance adjusting mechanism 15 is adjusted, so that the number of the gas inlets 16 on the gas homogenizing tube 12 at the point that are not blocked by the flow resistance adjusting mechanism 15 is the same, and the flow resistance of the gas homogenizing tube 12 is the same on the arc P1P 2. As the point M is far from the point O1', the number of air inlets 16 on the corresponding air homogenizing pipe 12 not blocked by the flow resistance adjusting mechanism 15 increases gradually with the second slope k2, so that the flow resistance of the corresponding air homogenizing pipe 12 on the arc gradually decreases. In extreme cases, it may be assumed that the air inlet holes 16 on the air homogenizing pipe 12 at the O1 'point are all blocked by the flow resistance adjusting mechanism 15, so that the flow resistance of the air homogenizing pipe 12 is at a maximum, and the equivalent is that the length of the portion of the air homogenizing pipe 12 occupied by the air inlet holes 16 on the air homogenizing pipe 12 not blocked by the flow resistance adjusting mechanism 15 is at a minimum of 0, and at the edge M' (i.e., the position farthest from the O1 'point on the connecting line O1' N in the second air homogenizing pipe area A1', the distance from the O1' point is r) the air inlet holes 16 on the air homogenizing pipe 12 are all exposed, so that the flow resistance of the air homogenizing pipe 12 is at a minimum, and the length of the portion of the air homogenizing pipe 12 not occupied by the flow resistance adjusting mechanism 15 is at a minimum (equivalent to the length of the air homogenizing pipe 12 at this point), so that the maximum second slope H/r can be calculated, where 0 < H2 (the longest length of the air homogenizing pipe 12 is less than the height H2 of the bottom gas diffusion chamber 132). However, the air intake holes 16 on the air homogenizing pipe 12 at the point O1' which are not blocked by the flow resistance adjusting mechanism 15 cannot be 0, and therefore, as L increases, the number of air intake holes 16 on the corresponding arc on the air homogenizing pipe 12 which are not blocked by the flow resistance adjusting mechanism 15 may be increased by any slope between 0 < k2 < h/r.

The other second uniform gas pipe areas A2' -A4' are similar to the second uniform gas pipe area A1', and will not be described again here. In order to avoid abrupt changes in the flow resistance of the air distribution pipes 12 at the boundary, the flow is not uniform, and therefore, the number of air intake holes 16 not blocked by the flow resistance adjusting mechanism 15 on the plurality of air distribution pipes 12 in the intersecting region (as illustrated in the region of the reference sign B1 '-B5') is adjusted to be the same as that at the extreme edge of the intersecting region (as illustrated in the region of the reference sign A1 '-A4').

It should be noted that, in the above embodiment, the number of the air inlets 14 is 4, but the air inlets in the embodiment of the present utility model are not limited to 4, so long as the number of the air inlets of each bottom gas diffusion chamber is 2 or more, the method is suitable for partition setting and flow resistance adjustment of the gas homogenizing pipe in the bottom gas diffusion chamber.

The structure and flow resistance adjustment method of the first flow resistance adjustment mechanism 15 provided in the other bottom gas diffusion chamber 132 located above the one bottom gas diffusion chamber 132 located at the lowermost layer can be understood with reference to the above-described embodiments corresponding to fig. 8 to 11.

Fig. 12 is a schematic structural view of a second flow resistance adjusting mechanism according to a preferred embodiment of the present utility model.

Referring to fig. 12, in this embodiment, the flow resistance adjusting mechanism 15 includes an inner sleeve 153 that is movably disposed in at least one gas homogenizing pipe 12 in the gas diffusion chamber 13 from the upper end in a sealing manner, and an air guiding structure is disposed at the top end of the inner sleeve 153 and includes an air inlet hole 16, but the air guiding structure is not limited to the air inlet hole 16, and may be a groove, a slit, or the like, as long as the structure can enable the gas homogenizing pipe 12 to communicate with the gas diffusion chamber 13. The reaction gas enters the corresponding gas homogenizing pipe 12 through the gas inlet 16, wherein a structure comprising the inner sleeve 153 and the corresponding gas homogenizing pipe 12 is defined, and the gas homogenizing pipe 12 without the inner sleeve 153 is of a flow channel structure, and the height of the inner sleeve 153 exposed to the upper end of the corresponding gas homogenizing pipe 12 is adjusted by moving the inner sleeve 153 up and down in the corresponding gas homogenizing pipe 12, so as to adjust the resistance when the reaction gas flows through the corresponding gas homogenizing pipe 12, preferably, the resistance when the reaction gas flows through the gas homogenizing pipe 12 decreases along the direction approaching the gas inlet 14 and separating from the gas inlet 14. In this way, the resistance of the reaction gas flowing through the gas homogenizing pipe 12 provided near the gas inlet 14 is greater than the resistance of the reaction gas flowing through the gas homogenizing pipe 12 provided far from the gas inlet 14, so that the uniformity of the reaction gas flowing into the reaction chamber is improved. Wherein, the height of the inner tube 153 exposed to the upper end of the gas homogenizing tube 12 can be reduced by moving the inner tube 153 downward, i.e. the length of the whole flow channel structure is reduced, so as to correspondingly reduce the flow resistance of the flow channel structure through which the reaction gas flows; conversely, by moving the inner tube 153 upward, the height of the inner tube 153 exposed to the upper end of the gas homogenizing tube 12 is increased, i.e. the length of the whole flow channel structure is increased, so as to correspondingly increase the flow resistance of the flow channel structure through which the reaction gas flows (i.e. the flow resistance of the flow channel structure through which the gas introduced into the gas homogenizing tube 12 through the gas inlet hole 16 flows) is proportional to the height of the inner tube 153 exposed to the upper end of the gas homogenizing tube 12 (the length of the whole flow channel structure).

In some embodiments, the flow resistance adjusting mechanism 15 is adjusted such that the height of the inner sleeve 153 exposed to the upper end of the gas homogenizing pipe 12 on the gas homogenizing pipe 12 near the gas inlet 14 is greater than the height of the inner sleeve 153 exposed to the upper end of the gas homogenizing pipe 12 on the gas homogenizing pipe 12 far from the gas inlet 14, so that the resistance of the reaction gas flowing through the gas homogenizing pipe 12 near the gas inlet 14 is greater than the resistance of the reaction gas flowing through the gas homogenizing pipe 12 far from the gas inlet 14, and the uniformity of the reaction gas flowing into the reaction chamber is improved. Specifically, the positions of the inner sleeves 153 up and down in the air homogenizing pipe 12 can be adjusted, so that the inner sleeve 153 on the air homogenizing pipe 12 closest to the air inlet 14 has the largest exposed height, the inner sleeve 153 on the air homogenizing pipe 12 farthest from the air inlet 14 has the smallest exposed height, and the exposed heights of the inner sleeves 153 on the air homogenizing pipes 12 between the two correspondingly have the successively decreasing exposed heights. In this way, the flow resistance of the gas in each flow path structure can be decreased in the direction approaching the gas inlet 14 to the direction separating from the gas inlet 14, so that the flow rate of the reaction gas finally discharged from each gas outlet hole 17 can be made to be uniform. In this way, by changing the overall length of the flow path structure by the flow resistance adjusting means 15 in the form of the inner tube 153, the flow resistance of the pipe through which the gas introduced into the gas diffusion chamber 13 flows is adjusted, and the flow rate of the gas introduced into the bottom surface of the bottom gas diffusion chamber 13 from each gas diffusion chamber 12 can be made uniform.

In some embodiments, the outer wall of the inner sleeve 153 may be provided with first threads 155 and the inner wall of the riser 12 may be provided with second threads 154 that mate with the first threads 155. Thus, the inner sleeve 153 may be screwed into the trachea 12 in a dynamic sealing engagement with the trachea 12 and the position of its up and down movement in the trachea 12 may be adjusted by rotating the inner sleeve 153.

Further, an inner hexagon 156 may be disposed on the inner wall of the inner tube 153, and the inner hexagon 156 may be a rotation control structure, and by matching a rotation tool (such as a wrench, a sleeve, etc.) with the inner hexagon 156, the inner tube 153 rotates relative to the air homogenizing tube 12 to adjust the vertical relative positions of the inner tube 153 and the air homogenizing tube 12.

In some embodiments, each of the gas homogenizing pipes 12 is the same length, and the resistance to the flow of the reaction gas through the gas homogenizing pipe 12 is adjusted by the up-and-down movement of the flow resistance adjusting mechanism 15 in the gas homogenizing pipe 12; in other embodiments, the length of the gas homogenizing pipe 12 decreases along the direction approaching the gas inlet 14 and moving away from the gas inlet 14, that is, when the gas shower head 10 is initially designed, the length of the gas homogenizing pipe 12 near the gas inlet 14 is relatively longer, the length of the gas homogenizing pipe 12 far from the gas inlet 14 is relatively shorter, the flow resistance of the gas homogenizing pipe 12 is roughly adjusted, and then the flow resistance of the reaction gas flowing through the gas homogenizing pipe 12 is finely adjusted by moving up and down in the gas homogenizing pipe 12 through the flow resistance adjusting mechanism 15 according to specific process requirements.

Similarly, the gas inlets 14 have respective gas homogenizing regions in the gas diffusion chambers 13, and in the same gas homogenizing region, the height of the inner sleeve 153 exposed to the upper end of the gas homogenizing tube 12 near the gas inlet 14 is greater than the height of the inner sleeve 153 exposed to the upper end of the gas homogenizing tube 12 far from the gas inlet 14 on the gas homogenizing tube 12.

Fig. 13 shows a schematic diagram of a top gas diffusion chamber comprising a second flow resistance adjustment means 15 (in the form of an inner sleeve 153 as shown in fig. 12), and fig. 14 shows a schematic diagram of a bottom gas diffusion chamber comprising a second flow resistance adjustment means 15 (in the form of an inner sleeve 153 as shown in fig. 12). The gas diffusion chambers of fig. 13 and 14 are the same as the gas diffusion chambers of fig. 5 and 8, respectively, except that the flow resistance adjustment mechanism 15 and the form of the gas guide structure are different; regarding the distribution and arrangement of the gas homogenizing regions of the gas diffusion chambers in fig. 13 and 14, reference is made to the foregoing embodiments corresponding to fig. 6-7 and the foregoing embodiments corresponding to fig. 9-11, respectively, which are not repeated herein.

In summary, the flow resistance adjustment mechanism 15 in an embodiment of the present invention is in the form of an inner sleeve 153 and/or a cooperating screw 151 and nut 152. Wherein, when the flow resistance adjusting mechanism 15 is provided in any one of the top gas diffusion chamber 131 and the bottom gas diffusion chamber 132, the flow resistance adjusting mechanism 15 may take the form of any one of the inner sleeve 153 and the cooperating screw 151 and nut 152. When the flow resistance adjustment means 15 are provided in both the top gas diffusion chamber 131 and the bottom gas diffusion chamber 132, the flow resistance adjustment means 15 in the form of an inner sleeve 153 may be provided in the top gas diffusion chamber 131 and the flow resistance adjustment means 15 in the form of a co-operating screw 151 and nut 152 may be provided in the bottom gas diffusion chamber 132; alternatively, the flow resistance adjustment means 15 in the form of a co-operating screw 151 and nut 152 may be provided in the top gas diffusion chamber 131 and the flow resistance adjustment means 15 in the form of an inner sleeve 153 in the bottom gas diffusion chamber 132; still alternatively, the flow resistance adjustment means 15 in the form of an inner sleeve 153 may be provided in both the top and bottom gas diffusion chambers 131, 132, or the flow resistance adjustment means 15 in the form of a mating screw 151 and nut 152 may be provided in both the top and bottom gas diffusion chambers 131, 132.

In some embodiments, the bottom gas diffusion chamber 132 further includes a gas homogenizing ring 18, see fig. 1, 8 and 14. The gas homogenizing ring 18 is disposed in the bottom gas diffusion chamber 132 and surrounds the bottom gas diffusion chamber 132 between the outer side of all the gas homogenizing pipes 12 and the sidewall of the bottom gas diffusion chamber 132, so as to facilitate the gas to be diffused circumferentially along the gas homogenizing ring 18 after entering the bottom gas diffusion chamber 132 from the gas inlet 14. The number of the gas equalizing rings 18 is one to a plurality. The central axis of each gas distribution ring 18 coincides with the central axis of the bottom gas diffusion chamber 132. When the number of the gas distribution rings 18 is plural, the height of the gas distribution ring 18 positioned at the inner ring is not lower than the height of the gas distribution ring 18 positioned at the outer ring.

In some embodiments, the height of the gas balancing ring 18 is greater than or equal to 0.5H2, H2 being the height of the bottom gas diffusion chamber 132 in which the gas balancing ring 18 is located. The height of the gas homogenizing pipe 12 is generally not lower than the height of the gas homogenizing ring 18, so that the reaction gas can be further blocked to be more favorable for gas diffusion.

Referring to fig. 15 in combination with fig. 1-14, fig. 15 is a schematic view illustrating an arrangement structure of a gas shower head on a metal organic chemical vapor deposition apparatus according to a preferred embodiment of the utility model. As shown in fig. 15, the metal organic chemical vapor deposition apparatus 20 includes a reaction chamber 21, and a substrate support 22 for disposing a substrate 30 and the gas shower head 10 according to the present utility model are provided in the reaction chamber 21. The gas shower head 10 is disposed opposite to the substrate support 22 (for example, the gas shower head 10 is disposed above the substrate support 22) and is configured to uniformly introduce the reaction gas, which is subjected to the flow resistance adjustment by the gas shower head 10, into the reaction chamber 21 to form a film layer having a uniform thickness on the surface of the substrate 30.

In some embodiments, the gas showerhead 10 may have a showerhead bottom surface parallel to and shaped to correspond to the surface of the substrate 30 and the reactant gas may be introduced into the reaction chamber 21 through showerhead ports 17 uniformly distributed on the showerhead bottom surface. For example, the shower bottom surface may be a bottom surface of the housing 11 of the gas shower head 10, and shower openings 17 are provided in the bottom surface of the housing 11.

The gas shower head 10 may be a gas shower head 10 provided with a plurality of gas diffusion chambers 13, and for example, the gas shower head 10 may be a gas shower head 10 provided with two gas diffusion chambers 13 corresponding to fig. 12, and may be used to introduce two kinds of reaction gases, which are homogenized through the gas homogenizing pipe 12, into the reaction chamber 21 in a spaced-apart manner.

In some embodiments, the metal organic chemical vapor deposition apparatus 20 may employ a gas showerhead 10 provided with two gas diffusion chambers 13. A uniform thickness of a film layer may be formed on the surface of the substrate 30 by introducing a uniform, e.g., hydride, reactant gas into the reaction chamber 21 through the top gas diffusion chamber 131 located at the upper layer and introducing a uniform, e.g., metal organic, source reactant gas into the reaction chamber 21 through the bottom gas diffusion chamber 132 located at the lower layer.

The utility model is applicable to the reaction chamber 21 with larger size, and by arranging the gas homogenizing pipes 12 in each gas diffusion chamber 13 of the gas spray header 10 and adjusting the resistance of the gas entering the gas homogenizing pipes 12 through the flow resistance adjusting mechanism 15, the flow rate of the gas when the gas is introduced into the reaction chamber 21 from each gas homogenizing pipe 12 is uniform, the uniformity of the reaction gas during spraying can be effectively improved, and a uniform film layer can be formed on the substrate 30. In addition, the resistance of the reactant gas flowing through each gas homogenizing pipe 12 can be independently adjusted, so that different process requirements can be met, and the gas spray header 10 does not need to be replaced, thereby saving the cost.

While embodiments of the present utility model have been described in detail hereinabove, it will be apparent to those skilled in the art that various modifications and variations can be made to these embodiments. It is to be understood that such modifications and variations are within the scope and spirit of the present utility model as set forth in the following claims. Moreover, the utility model described herein is capable of other embodiments and of being practiced or of being carried out in various ways.

Claims

1. A gas shower head for supplying a reaction gas into a reaction chamber, comprising:

2. A gas showerhead according to claim 1 wherein at least one of the gas distribution pipes comprises a gas guide structure provided at a side wall, the flow resistance adjustment mechanism is sealingly movably provided from an upper end in at least one of the gas distribution pipes comprising the gas guide structure to allow the reaction gas to enter the corresponding gas distribution pipe through the gas guide structure, and the flow resistance of the corresponding gas distribution pipe is adjusted by adjusting the gas guide amount of the gas guide structure by moving the flow resistance adjustment mechanism in an axial direction of the corresponding gas distribution pipe.

3. The gas shower head of claim 2, wherein the flow resistance adjustment mechanism comprises a blocking member and a fastening member, the fastening member is disposed at a top of the corresponding gas homogenizing pipe to block an upper end of the corresponding gas homogenizing pipe, and an outer diameter of the blocking member is adapted to an inner diameter of the corresponding gas homogenizing pipe, penetrates the fastening member, and is movably disposed in sealing relation with the corresponding gas homogenizing pipe.

4. A gas showerhead according to claim 3 wherein the plug and the fastener are threadably connected.

5. A gas shower head according to claim 1, wherein the flow resistance adjusting mechanism comprises an inner sleeve which is arranged in at least one of the gas homogenizing pipes in a sealing and movable way from the upper end, and an air guide structure is arranged at the top end of the inner sleeve, so that the reaction gas enters the corresponding gas homogenizing pipe through the air guide structure, and the height of the inner sleeve exposed to the upper end of the corresponding gas homogenizing pipe is adjusted by moving the inner sleeve up and down in the corresponding gas homogenizing pipe, so that the resistance of the reaction gas flowing through the corresponding gas homogenizing pipe is adjusted.

6. The gas shower head of claim 2, wherein the gas inlets have respective gas distribution areas in the respective gas diffusion chambers, and the gas conductance of the gas conductance structure on the gas distribution pipe adjacent to the respective gas inlet is smaller than the gas conductance of the gas conductance structure on the gas distribution pipe distant from the respective gas inlet in the same gas distribution area.

7. The gas shower head according to claim 5, wherein the gas inlets have respective gas distribution areas in the gas diffusion chambers, and the height of the inner sleeves exposed to the upper ends of the gas distribution pipes near the gas inlets is greater than the height of the inner sleeves exposed to the upper ends of the gas distribution pipes away from the gas inlets on the gas distribution pipes near the gas inlets.

8. A gas showerhead according to claim 6 or 7 wherein in the top gas diffusion chamber and/or the bottom gas diffusion chamber, the gas inlets comprise a plurality of gas inlets, the gas homogenizing zone corresponding to each gas inlet is an intersection region formed between a circular region projected from the bottom surface of the gas diffusion chamber and the bottom surface of the gas diffusion chamber with a radius R around the center point of the corresponding gas inlet, each intersection region is non-overlapping, wherein R is 0.25R < 0.5R, and R is the equivalent radius of the gas showerhead.

9. The gas shower head according to claim 1, wherein at least one gas homogenizing ring is wound in the bottom gas diffusion chamber and is located between the area where the gas homogenizing pipes are located and the inner wall of the bottom gas diffusion chamber, the height of the gas homogenizing ring is equal to or greater than 0.5h, h is the height of the bottom gas diffusion chamber where the gas homogenizing ring is located, and/or the height of the gas homogenizing ring is not higher than the height of the gas homogenizing pipe in the bottom gas diffusion chamber where the gas homogenizing ring is located.

10. The gas shower head according to claim 1, wherein the gas shower head is applied to a metal organic chemical vapor deposition apparatus, a substrate supporting portion for disposing a substrate is provided in the reaction chamber, the gas shower head is disposed opposite to the substrate supporting portion, a first reaction gas is introduced into the top gas diffusion chamber, a second reaction gas is introduced into at least one of the bottom gas diffusion chambers, and the gas shower head is used for uniformly introducing the reaction gas subjected to flow resistance adjustment by the gas shower head into the reaction chamber to form a film layer having a uniform thickness on the surface of the substrate.