KR101503255B1 - Apparatus and method of processing substrate - Google Patents

Apparatus and method of processing substrate Download PDF

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Publication number
KR101503255B1
KR101503255B1 KR20140136655A KR20140136655A KR101503255B1 KR 101503255 B1 KR101503255 B1 KR 101503255B1 KR 20140136655 A KR20140136655 A KR 20140136655A KR 20140136655 A KR20140136655 A KR 20140136655A KR 101503255 B1 KR101503255 B1 KR 101503255B1
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South Korea
Prior art keywords
exhaust
reaction
baffle
residual gas
plurality
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KR20140136655A
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Korean (ko)
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이상묘
정민영
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(주) 일하하이텍
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/205Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy using reduction or decomposition of a gaseous compound yielding a solid condensate, i.e. chemical deposition
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping

Abstract

The present invention relates to an apparatus for processing a substrate which comprises a chamber; a substrate support member; a baffle; and an exhaust unit. A processing space where a semiconductor process is conducted by receiving reaction gas is formed inside the chamber. The substrate support member is installed inside the chamber, and the substrate is mounted therein. The exhaust unit encloses the substrate support member as formed in a ring shape, and a plurality of horizontal exhaust holes exhausting remaining gas and reaction by-products generated during the semiconductor process from the processing space to a side part adjacent to the substrate support member are formed. The baffle is installed in an upper part of the exhaust unit inside the processing space, encloses the substrate support member as formed in a ring shape, and opens and closed the processing space as connected to the exhaust unit to be detachable by a vertical motion. Accordingly, the apparatus for processing a substrate can quickly discharge the remaining gas and the reaction by-products inside the chamber by using the venturi effect as the apparatus discharges the remaining gas and the reaction by-products of the processing space through the horizontal exhaust holes formed more narrowly in comparison with the processing space.

Description

[0001] APPARATUS AND METHOD OF PROCESSING SUBSTRATE [0002]

The present invention relates to a semiconductor device for processing a thin film, and to provide a substrate processing apparatus and method for processing a substrate by supplying gas.

In general, a semiconductor process for manufacturing a semiconductor device includes a deposition process for depositing a thin film and an etching process for patterning the deposited thin film. The semiconductor device is completed through a process of repeating the deposition process and the etching process several times. The deposition process, which is one of the semiconductor device manufacturing processes, includes sputtering, chemical vapor deposition (CVD), and atomic layer deposition (ALD).

The sputtering method is a physical vapor deposition method and has a disadvantage in that step coverage, which smoothly covers the surface when a thin film is formed in a state in which a step is formed on the surface of the substrate, is used.

In the chemical vapor deposition method, a thin film having an appropriate thickness is deposited on a substrate using a reaction gas and a decomposition gas. The chemical vapor deposition method deposits a thin film having a desired thickness on a substrate by supplying various gases to the reaction chamber and chemically reacting gases induced by high energy such as heat or plasma. Chemical vapor deposition increases the deposition rate by controlling the reaction conditions through the proportion and amount of applied plasma or gases as the reaction energy is large. The chemical vapor deposition method has advantages of excellent step coverage and productivity, compared with the sputtering method, but it can not deposit a thin film having a high process temperature and a thickness of 200 ANGSTROM or less. In addition, the chemical vapor deposition method is a method in which two or more reaction gases are simultaneously supplied to the inside of the reaction chamber to cause a reaction in the gaseous state, so that particles that become contamination sources are likely to be generated in this process, and thermodynamic ThermaDynamic stability is very difficult to control.

Atomic layer deposition is a process in which raw materials necessary for thin film formation are sequentially supplied in a time-divided manner and a film is formed through reaction of raw materials adsorbed on the substrate surface. The atomic layer deposition method has a merit that a thin film can be deposited to a thickness of 200 ANGSTROM or less. Recently, it has been widely used because of the tendency to develop a thin film and a semiconductor device having a fine patterning structure. Atomic layer deposition can deposit thin films with uniform thickness while suppressing impurities as much as possible, and the process proceeds at a temperature lower than 500 ℃, which is lower than that of chemical vapor deposition.

In atomic layer deposition, a uniform and fine thin film can be deposited using a surface reaction mechanism and particle generation due to gas reaction can be minimized. Since atomic layer deposition is performed only by the substance adsorbed on the surface of the substrate and the amount of adsorption is self-limiting on the substrate, the thin film is uniformly deposited over the entire substrate without depending on the amount of the reactive gas can do. Thus, the step coverage is excellent.

In the atomic layer deposition method, two kinds of reaction gases, which are precursors for depositing a thin film, are sequentially provided to a reaction chamber in which a substrate is disposed to form a thin film. At this time, after the first reaction gas is supplied, it is necessary to purge the inside of the reaction chamber to prevent the first reaction gas and the second reaction gas in the gaseous state from meeting to form particles. Similarly, a purge process is required after the second reaction gas is supplied. The purge process supplies the purge gas into the reaction chamber and drives the exhaust pump to remove gas or suspended matter remaining in the reaction chamber.

In particular, the fuzzy process in the atomic layer deposition method is very important because it causes product failure if the residual gas or suspended matter is not properly discharged. In this purge process, the discharge speed of the remaining gas and suspended matter remaining in the reaction chamber is controlled by the pressure of the exhaust pump. However, since the exhaust pump affects the vacuum pressure inside the reaction chamber, there is a limitation in adjusting the discharge speed of the residual gas and suspension by controlling the pressure of the exhaust pump. As a result, it is difficult to shorten the time required for the purge process, and since a large amount of time is required for the purge process, the film deposition process time is increased.

Korean Patent No. 10-0518676 (Sep. 26, 2005) "Atomic Layer Deposition Apparatus for Fabricating Semiconductor Devices and Manufacturing Method & Korean Patent No. 10-0558922 (Mar. 02, 2006) "Thin Film Deposition Apparatus and Method"

An object of the present invention is to provide a substrate processing apparatus capable of quickly removing residual gas and reaction by-products inside a chamber by using a venturi effect.

It is also an object of the present invention to provide a substrate processing method for processing a thin film using the above substrate processing apparatus.

According to an aspect of the present invention, there is provided a substrate processing apparatus including: a chamber having a processing space, which is supplied with a reaction gas and in which a semiconductor process is performed, A substrate support member installed inside the chamber and on which the substrate is mounted; An exhaust unit which is formed in a ring shape and surrounds the substrate supporting member and has a plurality of horizontal exhaust holes for exhausting the residual gas and reaction by-products generated in the semiconductor processing process from the process space to the side adjacent to the substrate supporting member; And a baffle which is installed in an upper portion of the exhaust unit in the process space and is formed in a ring shape and surrounds the substrate supporting member and is detachably coupled to the exhaust unit by vertical movement to open and close the process space can do.

In addition, the exhaust unit may include a main exhaust ring formed between the baffle and a primary exhaust space into which the residual gas and reaction by-products flow from the process space. Wherein the main exhaust ring is formed in a ring shape and surrounds the substrate support member and is disposed to face the baffle and is spaced apart from the baffle and includes a plurality of exhaust gases A ring plate having a first exhaust hole formed therein; And a sidewall ring formed in a tubular shape extending perpendicularly from an inner circumferential surface of the ring plate and defining the primary exhaust space together with the ring plate and having the plurality of horizontal exhaust holes formed at an upper end thereof.

Furthermore, the baffle can be coupled to the upper end of the side wall ring by the downward vertical movement to seal the plurality of horizontal exhaust holes and the process space.

The plurality of horizontal exhaust holes may be spaced apart from each other in the longitudinal direction and the circumferential direction of the side wall ring, and may be formed in an elliptical shape extending along the circumference of the side wall ring.

The baffle may be spaced apart from an upper end of the side wall ring when vertically moving upward to form an exhaust passage through which residual gas and reaction byproducts in the process space move to the primary exhaust space. Here, the plurality of horizontal exhaust holes may communicate with the exhaust passage.

On the other hand, the side wall ring is inclined downward toward the ring plate so as to guide the residual gas and reaction by-products in the process space toward the primary exhaust gas space. In addition, the exhaust passage may be formed such that an inner peripheral surface of the baffle and an inner peripheral surface of an upper end of the side wall ring are spaced apart from each other by an upward vertical movement of the baffle.

In addition, the side wall ring is provided with an upper end inner side surface on which the plurality of horizontal exhaust holes are formed, perpendicular to the upper surface of the ring plate, and the inner circumferential surface of the baffle corresponds to the inner surface of the upper end of the side wall ring, And the inner circumferential surface of the baffle may be arranged so as to surround the inner surface of the upper end of the side wall ring by vertical movement of the baffle to open and close the plurality of horizontal evacuation holes.

Further, the substrate support member may include: a substrate support on which the substrate is mounted, the substrate support having a step formed on a side thereof; And a support shaft coupled to the substrate support to support the substrate support. The side wall ring may have an upper end protruded outwardly and coupled to the step, and may be spaced apart from the side of the step.

The exhaust unit may include at least one exhaust gas passage disposed in the primary exhaust space and spaced apart from the ring plate and having a plurality of second exhaust holes for exhausting the residual gas and reaction by- The sub-exhaust ring of the exhaust gas recirculation system. Here, the first exhaust hole and the second exhaust hole may have different sizes.

The main exhaust ring may further include at least one sub-plate coupled to the ring plate and provided outside the primary exhaust space and having a plurality of sub-exhaust holes. Here, the first exhaust hole and the sub exhaust hole may have different sizes.

The substrate processing apparatus may further include an elevating member coupled to the baffle and vertically moving the baffle.

The substrate processing apparatus further includes an exhaust line connected to the chamber and discharging the residual gas and reaction by-products discharged from the processing space to the outside of the chamber; And an exhaust pump connected to the exhaust line.

According to another aspect of the present invention, there is provided a substrate processing method including: placing a substrate on a substrate supporting member provided in a chamber in which a process space is formed; A plurality of horizontal exhaust holes formed in a side portion of the exhaust unit surrounding the substrate support member so as to vertically move the baffle surrounding the substrate support member in the chamber to seal the process space, Feeding into the space; And purifying the residual gas and reaction by-products remaining in the process space using a venturi effect. In particular, the step of purging the residual gas and the reaction byproduct comprises: supplying a purge gas into the process space; And vertically moving the baffle vertically to discharge residual gas and reaction by-products in the process space to the outside through the plurality of horizontal exhaust holes.

Further, in the step of primarily discharging the residual gas and the reaction byproducts, the plurality of horizontal exhaust holes may be formed in such a manner that the residual gas discharged from the process space and reaction by- As shown in Fig.

In addition, the plurality of horizontal exhaust holes may be formed at a side upper end portion of the exhaust unit. In the step of supplying the reaction gas, the baffle may be coupled to a side upper end portion of the exhaust unit through downward vertical movement to seal the plurality of horizontal exhaust holes. Further, in the step of primarily discharging the residual gas and reaction byproducts, an exhaust passage is formed between the inner peripheral surface of the baffle and the side upper end portion of the exhaust unit by upward vertical movement of the baffle, Residual gases and reaction by-products of the process space may be introduced into the exhaust unit. Residual gas and reaction by-products that have passed through the plurality of horizontal exhaust holes may be introduced into the exhaust unit through the exhaust passage.

Here, the rate at which the residual gas and reaction by-products are discharged from the chamber can be adjusted according to the upward vertical movement distance of the baffle.

In addition, the plurality of horizontal exhaust holes may be formed at a side upper end portion of the exhaust unit. In addition, in the step of supplying the reaction gas, the inner circumferential surface of the baffle is coupled through the downward vertical movement so as to surround the side upper end portion of the exhaust unit to seal the plurality of horizontal exhaust holes. In addition, in the step of primarily discharging the residual gas and reaction by-products, the baffle is opened by the upward vertical movement of the plurality of horizontal exhaust holes. Here, the rate at which the residual gas and reaction by-products are discharged from the chamber can be controlled by adjusting the number of openings of the plurality of horizontal exhaust holes according to the upward vertical movement distance of the baffle.

In addition, the residual gas and reaction by-products discharged from the process space may be introduced into the primary exhaust space formed between the exhaust unit and the baffle in the step of first discharging the residual gas and reaction by-products. In addition, the step of purging the residual gas and the reaction by-products may include the step of purging the residual gas and the reaction by-products, wherein the residual gas introduced into the primary exhaust space and reaction byproducts are discharged from the primary exhaust space through the plurality of first exhaust holes formed in the exhaust unit And a second step of performing a second step.

In addition, the step of discharging the residual gas and the reaction by-products may include, before the step of secondly discharging the residual gas and the reaction by-products, the residual gas and the reaction by-products introduced into the primary exhaust space, And discharging the exhaust gas to the plurality of first exhaust holes through the plurality of second exhaust holes formed. Here, the second exhaust holes may be provided with different diameters in the first exhaust holes.

According to the substrate processing apparatus and method according to the embodiment of the present invention,

First, since the residual gas and reaction by-products in the process space are exhausted through the plurality of horizontal exhaust holes formed narrower than the process space, residual gas and reaction by-products in the chamber can be rapidly discharged using the venturi effect.

Second, an exhaust passage communicating with a plurality of horizontal exhaust holes can be formed, so that residual gas and reaction by-products can be rapidly discharged through a plurality of horizontal exhaust holes and an exhaust passage narrower than the process space.

Third, the width of the exhaust passage can be controlled by adjusting the vertical movement height of the baffle, thereby controlling the flow rate of the residual gas discharged from the process space and reaction byproducts. Therefore, The exhaust velocity of the reaction byproduct can be controlled.

Fourth, since residual gas and reaction by-products in the process space are discharged to the outside through the primary exhaust space, residual gas and reaction by-products can be sequentially discharged through the space division in the chamber, and residual gas and reaction by- And can be discharged smoothly.

Fifth, since the residual gas and the reaction by-products are secondarily discharged using the first to third exhaust holes and the plurality of sub-exhaust holes formed in the exhaust unit, the arrangement relationship of the holes and the size of the holes are adjusted, The exhaust velocity of the by-product can be controlled.

1 is a cross-sectional view of a substrate processing apparatus according to an embodiment of the present invention.
Fig. 2 is an enlarged cross-sectional view showing the arrangement relationship between the substrate support member, the baffle and the exhaust unit shown in Fig. 1. Fig.
3 is a plan view showing the arrangement relationship between the substrate supporting unit, the exhaust unit and the baffle shown in FIG.
4 is a plan view showing the back surface of the main exhaust ring shown in Fig.
5 is an enlarged cross-sectional view showing an enlarged portion 'A' shown in FIG.
FIG. 6 is a perspective view showing a plurality of horizontal exhaust holes of the side wall ring shown in FIG. 2 in detail.
FIG. 7 is a perspective view showing the first sub-exhaust ring shown in FIG. 1; FIG.
FIG. 8 is a perspective view showing the second sub-exhaust ring shown in FIG. 1. FIG.
9 is a flowchart illustrating a substrate processing method according to an embodiment of the present invention.
10 is a process diagram showing a process of supplying the first reaction gas in the substrate processing apparatus shown in FIG.
Fig. 11 is a flow chart specifically showing the operation relationship between the substrate support, the baffle and the exhaust unit shown in Fig. 10 when the first reaction gas is supplied.
12 is a flowchart showing the process of purging the residual gas and reaction by-products shown in FIG.
13 is a process diagram showing a process of purging residual gas and reaction by-products in the substrate processing apparatus shown in FIG.
FIG. 14 is a process chart specifically illustrating a process of discharging residual gas and reaction by-products through the exhaust unit shown in FIG.
15 is a process chart showing a process of discharging residual gas and reaction by-products through the horizontal exhaust holes of the side wall ring shown in FIG.
16 is a view showing another example of the baffle and the exhaust unit shown in Fig.
17 is a process diagram showing a process of discharging residual gas and reaction by-products using the exhaust unit shown in FIG.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. Note that, in the drawings, the same components are denoted by the same reference symbols as possible. Further, the detailed description of known functions and configurations that may obscure the gist of the present invention will be omitted. For the same reason, some of the components in the drawings are exaggerated, omitted, or schematically illustrated.

FIG. 1 is a cross-sectional view showing a substrate processing apparatus according to an embodiment of the present invention, FIG. 2 is an enlarged cross-sectional view showing the arrangement relationship between the substrate support member and the baffle and the exhaust unit shown in FIG. 1, Fig. 5 is a plan view showing the arrangement relationship between the substrate support, the exhaust unit and the baffle shown in Fig.

1 to 3, a substrate processing apparatus 100 according to the present invention is an apparatus for processing a substrate 10 using a semiconductor process, including a chamber 110, a substrate supporting member 120, A gas supply unit 140, a shower head 150, a baffle 160, an exhaust unit 170, an exhaust line 181, and an exhaust pump 185.

Specifically, the chamber 110 includes a bottom surface 111 and a bottom surface 111 that extend vertically from the bottom surface 111 and include a side wall 112, and are cylindrically provided to process a thin film on the substrate 10, Provide a space where the process takes place.

A substrate supporting member 120 is installed in the chamber 110. The substrate support member 120 includes a substrate support 121 and a support shaft 122 for supporting the substrate support 121. [ A substrate 10 is mounted on the upper surface of the substrate support 121, and the substrate 10 is fixed. The upper surface of the substrate supporting portion 121 has a generally circular shape and has an area larger than that of the substrate 10. [ The upper surface of the substrate supporting portion 121 has an area larger than that of the substrate 10. The support shaft 122 coupled to the lower portion of the substrate support 121 may be vertically movable.

A lid 130 is provided at an upper portion of the chamber 110 to seal the chamber 110 with the chamber 110. The lid 130 is disposed to face the substrate support 121 and a gas inlet hole 131 connected to the gas supply unit 140 is formed on the upper surface.

The gas supply unit 140 includes a first gas supply unit 141 for supplying a precursor gas and a second gas supply unit 142 for supplying a purge gas to purge the chamber 110 . Here, the first gas supply unit 141 may provide different first reaction gases and second reaction gases. The flow rates of the gases supplied from the first and second gas supply units 141 and 142 can be controlled by the valves 21 and 22, .

A showerhead 150 is installed inside the lid 130. The showerhead 150 is arranged to face the substrate support 121, has a plate shape, and has an area larger than that of the substrate 10. The shower head 150 is formed with a plurality of injection holes 151. The reaction gas or purge gas introduced from the gas supply unit 140 through the gas inlet holes 131 is supplied to the process space (PS), and is uniformly sprayed onto the upper surface of the substrate 10 which is seated on the substrate supporting portion 121.

In this embodiment, the process space PS is a space in which a substantially thin film processing process is performed inside the chamber 110, and the side wall 112 of the chamber 110, the substrate support 121, the lead 130, A head 150, and a baffle 160, and the substrate 10 is located in the process space PS during the thin film processing process.

A baffle 160 is installed on one side of the substrate support 121. The baffle 160 is provided between the side wall 112 of the chamber 110 and the substrate support 121 and the baffle 160 is formed into a ring shape surrounding the substrate support 121 as shown in FIG. The baffle 160 detachably couples to the exhaust unit 170 by vertical movement and opens and closes the process space PS through separation and engagement with the exhaust unit 170. [

The substrate processing apparatus 100 of the present invention may further include an elevating member 190 for vertically moving the baffle 160. The lifting member 190 is coupled to the upper surface of the baffle 160 to move the baffle 160 vertically.

An exhaust unit 170 is provided under the baffle 160 and the exhaust unit 170 quickly discharges residual gas and reaction by-products remaining in the process space PS from the process space PS.

Hereinafter, the configuration of the exhaust unit 170 will be described in detail with reference to the drawings.

FIG. 4 is a plan view showing the arrangement relationship between the substrate support shown in FIG. 1, the main exhaust ring, and the baffle.

1 to 4, the exhaust unit 170 includes a main exhaust ring 171 that forms a primary exhaust space ES1 between the exhaust unit 170 and the baffle 160. [ 2, the main exhaust ring 171 is provided below the upper surface of the substrate support 121, and has a ring plate 171a and a side wall ring 171b.

The ring plate 171a is disposed below the baffle 160 and faces the baffle 160 and surrounds the substrate support 121. [ As shown in Fig. 4, the ring plate 171a is ring-shaped, and a plurality of first exhaust holes 171c are formed. In one example of the present invention, each first exhaust hole 171c is formed in an elliptical shape extending along the outer peripheral surface of the ring plate 171a.

The side wall ring 171b extends vertically from the inner circumferential surface of the ring plate 171a to form a primary exhaust space ES1 and has a tubular shape and surrounds the substrate supporting portion 121 and is adjacent to the substrate supporting portion 121 Respectively. 2, the upper end of the side wall ring 171b protrudes outwardly, and a step 121a is formed on the side of the substrate supporting portion 121, in which the protruded upper end portion of the side wall ring 171b is seated. The upper end of the side wall ring 171b is positioned below the upper surface of the substrate support 121 on which the substrate 10 is seated.

FIG. 5 is an enlarged cross-sectional view showing an enlarged portion 'A' shown in FIG. 2, and FIG. 6 is a perspective view showing a plurality of horizontal exhaust holes of the side wall ring shown in FIG.

2, 5, and 6, a plurality of horizontal exhaust holes 72 are formed at an upper end of the side wall ring 171b. The plurality of horizontal exhaust holes 72 are disposed apart from each other in the longitudinal direction and the circumferential direction of the side wall ring 171b. In this embodiment, the plurality of horizontal exhaust holes 72 are formed in an elliptical shape extending in the circumferential direction of the side wall ring 171b as shown in FIG. 6, but may be formed in a circular shape. The plurality of horizontal exhaust holes 72 exhaust residual gas and reaction by-products in the process space PS to the primary exhaust space ES1. The upper end of the side wall ring 171b is spaced apart from the side defining the step 121a so that residual gas and reaction byproducts in the process space PS flow smoothly into the plurality of horizontal exhaust holes 72. [

In this embodiment, the upper end inner side surface 71 of the side wall ring 171b is inclined downwardly inclined toward the ring plate 171a. The baffle 160 is seated on the inner surface 71 of the upper end portion of the side wall ring 171b when the inner peripheral surface 161 of the baffle 160 is vertically moved downward. Here, the inner circumferential surface of the baffle 160 is formed of an inclined surface corresponding to the inner surface 71 of the upper end portion of the side wall ring 171b.

When the baffle 160 vertically moves downward by the elevating member 1900 and the inner circumferential surface 161 of the baffle 160 is coupled to the inner surface 71 of the upper end portion of the side wall ring 171b, A plurality of horizontal exhaust holes 72 formed in the baffles 71 and the process space PS are sealed by the baffle 160.

Conversely, when the baffle 160 is vertically moved upward by the elevating member 190 to separate the inner circumferential surface 161 of the baffle 160 from the upper end of the side wall ring 171b, the inner circumferential surface 161 of the baffle 160 And an exhaust passage EP is formed between the upper end inner side surface 71 of the side wall ring 171b. At the same time, a plurality of horizontal exhaust holes 72 that have been sealed are also opened and communicated with the exhaust passage EP. Residual gas and reaction byproducts of the process space PS are introduced into the primary exhaust space ES1 through the plurality of horizontal exhaust holes 72 and the exhaust passage EP. At this time, the residual gas and the reaction by-products are guided to the primary exhaust space ES1 by the upper end inner surface 71 of the inclined side wall ring 171b.

When a fluid such as a gas enters a narrow passage from a wide passage, a fluid velocity increases in a narrow passage compared to a wide passage, which is called a venturi effect. The exhaust unit 170 uses the venturi effect to discharge residual gas and reaction by-products in the process space PS to the outside. That is, the exhaust passage EP formed between the inner peripheral surface 161 of the baffle 160 and the side wall ring 171b is relatively narrow as compared with the process space PS. Therefore, when the residual gas flowing through the process space PS and the reaction byproducts enter the exhaust passage EP during the gas exhaust, the flow rate in the exhaust passage EP becomes faster than the flow rate in the process space PS, Rapid release of reaction by-products can be achieved.

In addition, a plurality of horizontal exhaust holes 72 formed in the upper end of the side wall ring 171b are also used for introducing residual gases and reaction byproducts in the process space PS into the primary exhaust space ES1 as in the exhaust passage EP. It is a kind of passageway, which is also narrower than the process space (PS). Therefore, the venturi effect by the exhaust unit 170 can be further maximized during the gas exhaust, so that the residual gas and reaction by-products in the process space PS can be quickly discharged.

In this embodiment, the flow velocity of the fluid flowing through the exhaust passage EP is varied depending on the width of the exhaust passage EP, and the width of the exhaust passage EP is determined by the inner peripheral surface 161 of the baffle 160, The distance between the inner circumferential surface 161 of the baffle 160 and the inner surface 71 of the upper end of the side wall ring 171b varies depending on the distance of upward vertical movement of the baffle 160, ≪ / RTI > Accordingly, the substrate processing apparatus 100 of the present invention can adjust the vertical movement distance of the baffle 160 to adjust the flow rate of the residual gas and reaction by-products in the exhaust passage EP.

The residual gas and reaction by-products discharged into the primary exhaust space ES1 are discharged into the secondary exhaust space ES2 through the plurality of first exhaust holes 171c formed in the ring plate 171a.

Meanwhile, the exhaust unit 170 of the present invention may further include first and second sub-exhaust rings 172 and 173. The first and second sub-exhaust rings 172 and 173 are installed in the primary exhaust space ES1 and are arranged to face the ring plate 171a of the main exhaust ring 171. [

FIG. 7 is a perspective view showing the first sub-exhaust ring shown in FIG. 1, and FIG. 8 is a perspective view showing the second sub-exhaust ring shown in FIG.

Referring to Figs. 2 and 7, the first sub-exhaust ring 172 is disposed on the ring plate 171a and has a ring shape as shown in Fig. The first sub-exhaust ring 172 surrounds the substrate support 121, and a plurality of second exhaust holes 172a are formed. The first sub-exhaust ring 172 is located away from the ring plate 171a, with a plurality of second exhaust holes 172a formed.

2 and 8, the second sub-exhaust ring 173 is disposed between the first sub-exhaust ring 172 and the ring plate 171a, and is ring-shaped as shown in Fig. 8, The third exhaust hole 173a is formed. The second sub-exhaust ring 173 surrounds the substrate support 121 and a surface on which a plurality of third exhaust holes 173a are formed is positioned apart from the first sub-exhaust ring 172 and the ring plate 171a .

In this embodiment, each of the second and third exhaust holes 172a and 173a is formed in a substantially circular shape and includes a first exhaust hole 171c, a second exhaust hole 172a, and a third exhaust hole 173a Are formed in different sizes.

In this embodiment, the exhaust unit 170 has two sub-exhaust rings 172 and 173, but the number of the sub-exhaust rings 172 and 173 is smaller than the number of the process spaces PS and the primary exhaust space ES1 and the pressure of the exhaust pump 185, as shown in FIG.

Referring again to FIGS. 1 to 3, the main exhaust ring 171 may further include a plurality of sub-plates 171d. In this embodiment, the main exhaust ring 171 has eight sub-plates 171d, but the number of the sub-plates 171d may increase or decrease depending on the size of the sub-plate 171d.

3, the plurality of sub plates 171d are coupled to the rear surface of the ring plate 171a, and the residual gas introduced into the primary exhaust space ES1 and reaction by-products are introduced into the secondary exhaust space ES2, A plurality of sub-exhaust holes 171e are formed. In one example of the present invention, each of the sub-exhaust holes 171e is formed in an elliptical shape and is formed to have a different size from the first exhaust hole 171c.

An exhaust line 181 is connected to the bottom surface 111 of the chamber 110 and an exhaust pump 185 is connected to the exhaust line 181. The exhaust line 181 is connected to the chamber exhaust hole 111a formed in the bottom surface 111a of the chamber 110 and discharges residual gas and reaction by-products in the secondary exhaust space ES2 to the outside of the chamber 110 . The exhaust pump 185 connected to the exhaust line 181 regulates the exhaust pressure in the exhaust line 181 and the total exhaust pressure in the chamber 110.

Hereinafter, a process of performing the thin film processing process using the substrate processing apparatus 100 of the present invention will be described in detail with reference to the drawings.

FIG. 9 is a flowchart illustrating a method of processing a substrate according to an embodiment of the present invention, FIG. 10 is a process diagram illustrating a process of supplying a first reaction gas in the substrate processing apparatus shown in FIG. 1, Fig. 10 is a process chart specifically showing the operation relationship between the substrate support, the baffle and the exhaust unit shown in Fig.

9 to 11, the substrate 10 is placed on the upper surface of the substrate supporting part 121 of the substrate supporting member 120 and the substrate supporting part 121 is fixed on the upper surface of the substrate supporting part 121 (Step S110).

Next, the elevating member 190 vertically moves the baffle 160 downward to seal the process space PS, and then the first reaction gas PC is supplied into the closed process space PS to be adsorbed on the substrate 10 (Step S120).

11, the inner circumferential surface 161 of the baffle 160 surrounding the substrate supporter 121 is connected to the side wall ring 171b of the main exhaust ring 171, And abuts against the upper end inner surface 71. As a result, the process space PS where the substrate 10 is located and the plurality of horizontal exhaust holes 72 communicating with the process space PS are sealed. Next, the first reaction gas (PC) is supplied into the closed process space (PS) and adsorbed to the substrate (10). The first reaction gas PC is supplied from the first gas supply unit 141 and is first introduced into the lid 130 from the first gas supply unit 141 through the gas inlet hole 131 of the lid 130 . The first reaction gas PC introduced into the lead 130 flows into the process space PS through a plurality of injection holes 151 formed in the shower head 150 and is adsorbed on the upper surface of the substrate 10. [

Part of the first reaction gas PC introduced into the process space PS can not be adsorbed to the substrate 10 and can remain in the process space PS as residual gas such as unreacted precursor, The reaction suspension can be generated in the process space (PC). Such residual gas and reaction suspension may affect the subsequent process, which may lead to poor film deposition.

In order to prevent this, after the step S120, the exhaust unit 170 is not adsorbed on the substrate 10, and the residual gas such as unreacted precursor and the reaction suspension generated by the first reaction gas are supplied to the plurality of horizontal exhaust holes 72, (Step S130).

Hereinafter, the step S130 of purging the residual gas and the reaction suspension in the process space PS will be described in detail with reference to the drawings.

FIG. 12 is a flowchart illustrating a process of purging the residual gas and reaction by-products shown in FIG. 9, FIG. 13 is a process diagram illustrating a process of purging residual gas and reaction by-products in the substrate processing apparatus shown in FIG. FIG. 15 is a view illustrating a process of discharging residual gas and reaction by-products through the exhaust unit shown in FIG. 13. FIG. 15 is a view illustrating a process of discharging the residual gas and reaction by-products through the horizontal exhaust holes of the side- Fig.

12 to 15, a purge gas PG for purging residual gas and reaction by-products is first introduced into the process space PS from the second gas supply unit 142 (step S131). The purge gas PG first flows into the lead 130 through the gas inlet hole 131 of the lead 130 from the second gas supply unit 142 and flows into the lead 130 through the purge gas PG, Is introduced into the process space PS through the plurality of injection holes 151 of the shower head 150.

The elevating member 190 vertically moves the baffle 160 vertically to separate the baffle 160 from the side wall ring 171b of the main exhaust ring 171 to open the process space PS. The exhaust passage EP is formed between the inner circumferential surface 161 of the baffle 160 and the inner surface 71 of the upper end of the side wall ring 171b and a plurality of horizontal exhaust holes The hole 72 is opened (step S132). At this time, the exhaust pump 185 for purging the residual gas and reaction by-products in the chamber 110 is also driven.

The residual gases and reaction byproducts in the process space PS are then discharged to the exhaust unit 170 and are first discharged through the plurality of horizontal exhaust holes 72 and the exhaust passage EP into the primary exhaust space ES1 (Step S143).

More specifically, when the inner circumferential surface 161 of the baffle 160 is separated from the upper end of the side wall ring 171b by the upward vertical movement of the baffle 160, the inner circumferential surface 161 of the baffle 160 and the inner circumferential surface 161b of the side wall ring 171b And an exhaust passage EP is formed between the upper end portion and the inner surface 71 of the upper end portion. At the same time, a plurality of horizontal exhaust holes 72 communicating with the process space PS are also opened, and a plurality of horizontal exhaust holes 72 are communicated with the exhaust passage EP. Residual gas and reaction byproducts in the process space PS immediately enter the exhaust passage EP or enter the exhaust passage EP through the plurality of horizontal exhaust holes 72. Since the plurality of horizontal exhaust holes 72 are arranged to face the side of the substrate support 121, the residual gas and the reaction by-products are horizontally arranged in a plurality of horizontal exhaust holes 72 in the horizontal direction with respect to the upper surface of the substrate support 121, Respectively.

 Residual gas and reaction byproducts introduced into the exhaust passage EP are guided into the primary exhaust space ES1 by the inclined inner surface 71 of the side wall ring 171b and flow into the primary exhaust space ES1. Here, reference numeral NP shown in Figs. 13 to 15 represents the flow of the residual gas and the reaction byproduct.

When the residual gas and reaction byproducts enter a plurality of horizontal exhaust holes 72 and exhaust passages EP that are relatively narrower than the process space PS, the venturi effect causes residual gas and reaction by- . Accordingly, the exhaust unit 170 can quickly discharge the residual gas and reaction by-products in the process space PS to the outside using the venturi effect.

Since the flow rate of the residual gas and reaction byproducts flowing into the primary exhaust space ES1 from the process space PS is adjusted according to the width of the exhaust passage EP, The vertical movement distance can be adjusted to control the rate at which the residual gas and reaction by-products are discharged. Accordingly, the substrate processing apparatus 100 can regulate the exhaust velocity of the residual gas and the reaction by-product without regulating the exhaust pressure of the exhaust pump 185.

The residual gas and reaction by-products discharged into the primary exhaust space ES1 are exhausted through the first to third exhaust holes 171c, 172a and 173a and the plurality of sub-exhaust holes 171e to the secondary exhaust space ES2 (Step S134).

Specifically, the residual gas introduced into the primary exhaust space ES1 and the reaction by-products are supplied to the plurality of second exhaust holes 172a formed in the first sub-exhaust ring 172 and the plurality of second exhaust holes 172b formed in the second sub- A plurality of first exhaust holes 171c formed in the ring plate 171a and a plurality of sub exhaust holes 171e formed in the plurality of sub plates 171d are formed in the annular plate 171a after sequentially passing through the third exhaust holes 173a of the sub- And then discharged into the secondary exhaust space ES2.

Residual gas and reaction byproducts introduced into the secondary exhaust space ES2 flow into the exhaust line 181 through the chamber exhaust hole 111a formed in the bottom surface 111 of the chamber 110 and are discharged to the outside of the chamber 110 (Step S135). As a result, the purging of residual gas and reaction by-products that have been generated by the first reaction gas and remain in the chamber 110 are completed.

The substrate processing apparatus 100 of the present invention opens the process space PS so that the residual gas and reaction by-products in the process space PS are not directly led to the chamber exhaust hole 111a communicating with the exhaust line 181 The exhaust gas and the reaction by-products in the chamber 110 are sequentially discharged through the space division using the exhaust unit 170, so that the residual gas and the reaction by-products can be quickly and smoothly discharged.

9 and 10, when the residual gas generated by the first reaction gas PC and the reaction byproduct are completely purged, the baffle 160 is vertically moved downward again to close the process space PS, Then, a second reaction gas is supplied to the process space PS to form an atomic layer on the substrate 10 (step S140).

Next, residual gas and reaction by-products generated in the chamber 110 by the second reaction gas are purged using the venturi effect (step S150).

In this embodiment, step S140 of supplying the second reaction gas and adsorbing the second reaction gas onto the substrate 10 is the same as step S120, and step S150 of removing residual gas and reaction by-products generated by the second reaction gas is performed in step S130 The detailed description thereof will be omitted.

Also, in this embodiment, the thin film to be deposited on the substrate 10 is generated in one cycle from step S120 to step S150, and the substrate processing apparatus 100 repeats step S120 to step S150 in order to form a thin film .

Hereinafter, the configuration of another example of the baffle and the exhaust unit shown in FIG. 1 and the exhaust process using the same will be described.

16 is a view showing another example of the baffle and the exhaust unit shown in Fig.

Referring to Fig. 16, the inner circumferential surface of the baffle 106a is formed perpendicular to the upper surface of the ring plate 171a. Here, the baffle 160a shown in Fig. 16 is the same as the baffle 160 shown in Fig. 1, except for the shape of the inner peripheral surface 162. Fig.

The exhaust unit 170a shown in Fig. 16 has the same configuration as that of the exhaust unit 170 shown in Fig. 1 except for the first exhaust ring 174, and the first exhaust ring 174 and the side wall rings 174a 1, except that the first exhaust ring 171 shown in Fig. The side wall ring 174a of the first exhaust ring 174 extends vertically from the inner peripheral surface of the ring plate 171a and surrounds the substrate supporting portion 121. [ A plurality of horizontal exhaust holes 74 are formed at the upper end of the side wall ring 174a, and the upper end inner side extends perpendicularly to the upper surface of the ring plate 171a.

The baffle 160a encloses the plurality of horizontal exhaust holes 174 formed at the upper end of the side wall ring 174a by enclosing the side wall ring 174a through the downward vertical movement. As a result, the process space PS is also sealed.

17 is a process diagram showing a process of discharging residual gas and reaction by-products using the exhaust unit shown in FIG.

Referring to FIG. 17, when evacuating residual gas and reaction by-products in the process space PS, the baffle 160a vertically moves vertically to open a plurality of horizontal exhaust holes 174. Residual gas and reaction by-products in the process space (PS) are firstly exhausted into the primary exhaust space (ES1) through a plurality of open horizontal exhaust holes (174). At this time, the rate at which the residual gas and reaction byproducts are discharged from the process space PS is controlled according to the number of the horizontal exhaust holes to be opened, and the number of the horizontal exhaust holes to be opened is adjusted according to the upward vertical movement distance of the baffle 160a .

Although the substrate processing apparatus 100 according to the present invention has been described above as an example of performing the deposition process for forming the thin film on the substrate 10 among the methods for processing the substrate 10, ) May be used, but the present invention is not limited thereto and can be used in an etching process for etching a thin film on the substrate 10.

It will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the invention as defined in the appended claims. It will be possible.

100: substrate processing apparatus 110: chamber
120: substrate support member 130: lead
140: gas supply unit 150: shower head
160, 160a: baffle 170, 170a: exhaust unit
171, 174: main exhaust ring 172: first sub exhaust ring
173: second sub-exhaust ring 181: exhaust line
185: exhaust pump 190:
72: Horizontal exhaust hole

Claims (19)

  1. A chamber in which a process space is formed in which a semiconductor process is performed by receiving a reaction gas;
    A substrate support member installed inside the chamber and on which the substrate is mounted;
    An exhaust unit which is formed in a ring shape and surrounds the substrate supporting member and has a plurality of horizontal exhaust holes for exhausting the residual gas and reaction by-products generated in the semiconductor processing process from the process space to the side adjacent to the substrate supporting member; And
    A plurality of horizontal exhaust holes formed in the process space and disposed in the upper portion of the exhaust unit to surround the substrate support member and separated from the exhaust unit by vertical movement, And a baffle for opening /
    Wherein the plurality of horizontal exhaust holes
    And discharging the residual gas and reaction by-products of the process space in a direction parallel to the surface on which the substrate is mounted of the substrate support member.
  2. The method according to claim 1,
    The exhaust unit includes:
    And a main exhaust ring formed between the baffle and the process space and having a primary exhaust space through which the residual gas and reaction by-
    Wherein the main exhaust ring includes:
    A plurality of first exhaust holes formed in a ring shape and surrounding the substrate support member and spaced apart from the baffle so as to face the baffle and exhausting residual gas introduced into the primary exhaust space and reaction by- A formed ring plate; And
    And a side wall ring formed in a tubular shape extending vertically from an inner circumferential surface of the ring plate and defining the primary exhaust space together with the ring plate and having a plurality of horizontal exhaust holes formed at an upper end thereof. Processing device.
  3. 3. The method of claim 2,
    Wherein the baffle is coupled to an upper end portion of the side wall ring by an inner peripheral surface by downward vertical movement to seal the plurality of horizontal exhaust holes and the processing space.
  4. The method of claim 3,
    Wherein the plurality of horizontal exhaust holes
    Wherein the side wall ring is spaced apart from each other in a longitudinal direction and a circumferential direction of the side wall ring, and each of the side wall rings is formed in an elliptical shape extending along the periphery of the side wall ring.
  5. The method of claim 3,
    Wherein the baffle is spaced apart from an upper end of the side wall ring when vertically moving upward to form an exhaust passage through which residual gas and reaction byproducts in the process space move to the primary exhaust space,
    And the plurality of horizontal exhaust holes communicate with the exhaust passage.
  6. 6. The method of claim 5,
    The side-
    Wherein an upper end inner side surface is inclined downward toward the ring plate so as to guide residual gas and reaction by-products in the process space to the primary exhaust gas space side,
    The exhaust passage
    Wherein an inner peripheral surface of the baffle and an inner peripheral surface of an upper end of the side wall ring are spaced apart from each other by an upward vertical movement of the baffle.
  7. The method of claim 3,
    Wherein the side wall ring has an upper end inner surface formed with the plurality of horizontal exhaust holes perpendicular to the upper surface of the ring plate,
    Wherein the baffle has an inner circumferential surface perpendicular to an upper surface of the ring plate corresponding to an inner surface of an upper end of the side wall ring,
    And the inner peripheral surface of the baffle is arranged to surround the inner surface of the upper end of the side wall ring by vertical movement of the baffle to open / close the plurality of horizontal exhaust holes.
  8. 8. The method according to claim 6 or 7,
    Wherein the substrate support member comprises:
    A substrate support having the substrate mounted thereon and having a step formed on a side thereof; And
    And a support shaft coupled to the substrate support to support the substrate support,
    The side-
    And an upper end protruding outwardly and coupled to the step, wherein the upper end is spaced apart from the side surface of the step.
  9. 9. The method of claim 8,
    The exhaust unit includes:
    Further comprising at least one sub-exhaust ring spaced from the ring plate in the primary exhaust space and having a plurality of second exhaust holes for exhausting the residual gas and reaction by-products introduced into the primary exhaust space and,
    Wherein the first exhaust hole and the second exhaust hole have different sizes.
  10. 8. The method of claim 7,
    Wherein the main exhaust ring includes:
    Further comprising: at least one sub-plate coupled to the ring plate and provided outside the primary exhaust space, the sub-plate having a plurality of sub-exhaust holes,
    Wherein the first exhaust hole and the sub exhaust hole have different sizes.
  11. The method according to claim 1,
    Further comprising an elevating member coupled to the baffle for vertically moving the baffle.
  12. The method according to claim 1,
    An exhaust line connected to the chamber and discharging the residual gas and reaction by-products discharged from the process space to the outside of the chamber; And
    Further comprising an exhaust pump connected to the exhaust line.
  13. Placing a substrate on a substrate support member disposed in a chamber in which a process space is formed;
    A plurality of horizontal exhaust holes formed in a side portion of the exhaust unit surrounding the substrate support member so as to vertically move the baffle surrounding the substrate support member in the chamber to seal the process space, Feeding into the space; And
    Purging residual gas and reaction by-products remaining in the process space using a venturi effect,
    The purge of residual gas and reaction by-
    Supplying a purge gas into the process space; And
    And vertically moving the baffle vertically to discharge residual gas and reaction by-products in the process space to the outside through the plurality of horizontal exhaust holes,
    In the step of primarily discharging the residual gas and the reaction byproducts,
    Wherein the substrate support member guides the residual gas discharged from the process space and reaction by-products to flow in a direction parallel to the surface on which the substrate is mounted.
  14. delete
  15. 14. The method of claim 13,
    Wherein the plurality of horizontal exhaust holes are formed in a side upper end portion of the exhaust unit,
    In the step of supplying the reaction gas, the baffle is coupled to a side upper end portion of the exhaust unit through downward vertical movement to seal the plurality of horizontal exhaust holes,
    An exhaust passage is formed between an inner circumferential surface of the baffle and a side upper end portion of the exhaust unit by vertically moving the baffle in a first stage of discharging the residual gas and reaction byproducts, Residual gas in the space and reaction by-products are introduced into the exhaust unit,
    Wherein residual gas and reaction by-products that have passed through the plurality of horizontal exhaust holes are introduced into the exhaust unit through the exhaust passage.
  16. 16. The method of claim 15,
    Wherein the rate at which the residual gas and reaction byproducts are discharged from the chamber is adjusted according to an upward vertical movement distance of the baffle.
  17. 14. The method of claim 13,
    Wherein the plurality of horizontal exhaust holes are formed in a side upper end portion of the exhaust unit,
    In the step of supplying the reaction gas, the baffle is coupled with the inner circumferential surface of the baffle through a downward vertical movement so as to surround the side upper end portion of the exhaust unit to seal the plurality of horizontal exhaust holes,
    Wherein the baffle has a plurality of horizontal exhaust holes opened by upward vertical movement of the baffle,
    Wherein the rate at which the residual gas and reaction byproducts are expelled from the chamber is regulated by controlling the number of openings of the plurality of horizontal exhaust holes according to an upward vertical movement distance of the baffle.
  18. 18. The method according to claim 15 or 17,
    The residual gas and the reaction by-products discharged from the process space are introduced into the primary exhaust space formed between the exhaust unit and the baffle,
    The purge of residual gas and reaction by-
    Further comprising the step of secondarily discharging residual gas and reaction by-products introduced into the primary exhaust space from the primary exhaust space through a plurality of first exhaust holes formed in the exhaust unit.
  19. 19. The method of claim 18,
    Wherein the step of discharging the residual gas and the reaction by-products comprises, before the step of discharging the residual gas and the reaction by-
    Wherein the residual gas and reaction by-products introduced into the primary exhaust space are discharged to the plurality of first exhaust holes through a plurality of second exhaust holes formed in the exhaust unit,
    Wherein the second exhaust hole and the first exhaust hole are provided at different diameters.
KR20140136655A 2014-10-10 2014-10-10 Apparatus and method of processing substrate KR101503255B1 (en)

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20070012131A (en) * 2005-07-22 2007-01-25 주식회사 래디언테크 Plasma processing apparatus and exhausting plate
KR20110062534A (en) * 2009-12-03 2011-06-10 세메스 주식회사 Plasma treatment apparatus
KR20130007149A (en) * 2011-06-29 2013-01-18 세메스 주식회사 Apparatus for treating substrate
US20130075037A1 (en) 2008-03-21 2013-03-28 Tokyo Electron Limited Plasma processing apparatus

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20070012131A (en) * 2005-07-22 2007-01-25 주식회사 래디언테크 Plasma processing apparatus and exhausting plate
US20130075037A1 (en) 2008-03-21 2013-03-28 Tokyo Electron Limited Plasma processing apparatus
KR20110062534A (en) * 2009-12-03 2011-06-10 세메스 주식회사 Plasma treatment apparatus
KR20130007149A (en) * 2011-06-29 2013-01-18 세메스 주식회사 Apparatus for treating substrate

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