CN117116816A - Air inlet device and air inlet method - Google Patents
Air inlet device and air inlet method Download PDFInfo
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- CN117116816A CN117116816A CN202311376839.0A CN202311376839A CN117116816A CN 117116816 A CN117116816 A CN 117116816A CN 202311376839 A CN202311376839 A CN 202311376839A CN 117116816 A CN117116816 A CN 117116816A
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- 238000006243 chemical reaction Methods 0.000 claims abstract description 34
- 238000009826 distribution Methods 0.000 abstract description 20
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- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 238000000427 thin-film deposition Methods 0.000 description 2
- 239000003513 alkali Substances 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 150000003346 selenoethers Chemical class 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 150000004772 tellurides Chemical class 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 150000003568 thioethers Chemical class 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- Microelectronics & Electronic Packaging (AREA)
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Abstract
The invention relates to an air inlet device and an air inlet method, wherein the air inlet device comprises: the air inlet device comprises an air inlet device body, wherein a plurality of air inlets are formed in the side edge of the air inlet device body so as to introduce air into the air inlet device body; a baffle plate is arranged at the position opposite to the air inlet, the baffle plate can move up and down to switch between two states that the baffle plate shields the air inlet and the baffle plate does not shield the air inlet, at least a gas channel for allowing gas to pass through is reserved above or below the baffle plate, and when the baffle plate moves to the position of shielding the air inlet, the gas needs to bypass the baffle plate and then is diffused to the central area of the air inlet device body from the baffle plate; when the baffle moves to a position where the air inlet is not blocked, the air can directly flow into the central area of the air inlet device body, and by adopting the air inlet device, different air inlet rates of the wafer central area and the wafer edge area can be realized, and different air distribution amounts of the wafer central area and the wafer edge area can be realized, so that different reaction rates of the wafer central area and the wafer edge area can be realized.
Description
Technical Field
The invention relates to the field of semiconductor manufacturing, in particular to an air inlet device and an air inlet method.
Background
In the chip manufacturing process, a lot of processes need to charge gas into the chamber, but the existing top gas inlet mode is adopted, the gas inlet rate of the center and the edge of the wafer is approximately consistent by adopting the gas inlet mode, the gas of the center and the edge of the wafer is approximately uniformly distributed, in the practical engineering application, the gas distribution amounts of the center and the edge of the wafer are required to be different, so that the reaction rates of the center area and the edge area of the wafer are different, and the gas distribution amounts of the center and the edge of the wafer are not different by the related technology at present.
Disclosure of Invention
In view of the above, the present invention provides an air intake device and an air intake method.
The present invention provides an air intake device, comprising: the air inlet device comprises an air inlet device body, wherein a plurality of air inlets are formed in the side edge of the air inlet device body so as to introduce air into the air inlet device body; a baffle is arranged at the position opposite to the air inlet, the baffle can move up and down so as to switch between two states that the baffle shields the air inlet and the baffle does not shield the air inlet, at least a gas channel for allowing the gas to pass through is reserved above or below the baffle, when the baffle moves to the position of shielding the air inlet, the baffle is positioned on a path for horizontally flowing the gas, and the gas needs to bypass the baffle and then is diffused to the central area of the air inlet device body from the baffle; when the baffle moves to a position where the air inlet is not blocked, the air can directly impact the central area of the air inlet device body, and the vertical height of the baffle is larger than the horizontal width.
When the baffle moves to the position where the air inlet is not blocked, the air can directly impact the central area of the air inlet device body, so that the air inlet rate and the air distribution amount of the central area of the wafer are larger than those of the edge area of the wafer, and the reaction rate of the central area of the wafer is larger than those of the edge area of the wafer; when the baffle moves to shield the air inlet, the air needs to bypass the baffle and then diffuse from the baffle to the central area of the air inlet device body, so that the air inlet rate and the air distribution amount of the wafer edge area are larger than those of the wafer central area, the reaction rate of the wafer edge area is larger than those of the wafer central area, and by adopting the air inlet device, the difference of the air inlet rates of the wafer central area and the wafer edge area and the difference of the air distribution amount of the wafer central area and the wafer edge area can be realized, and the difference of the reaction rates of the wafer central area and the wafer edge area can be realized.
In one embodiment, the baffle shields the air inlet, comprising: the baffle plate moves to the top of the air inlet device body, the bottom of the baffle plate is lower than the air inlet, and the gas passes through the bottom of the baffle plate; or the baffle plate moves to the bottom of the air inlet device body, the top of the baffle plate is higher than the air inlet, and the gas passes through the top of the baffle plate. The baffle plate moves to the top of the air inlet device body, the bottom of the baffle plate is lower than the air inlet, the gas passes through the bottom of the baffle plate and diffuses from the edge area of the air inlet device body to the central area of the air inlet device body, so that the air inlet rate and the gas distribution amount of the edge area of the wafer are larger than those of the central area of the wafer, and the reaction rate of the edge area of the wafer is larger than those of the central area of the wafer; or the baffle plate moves to the bottom of the air inlet device body, the top of the baffle plate is higher than the air inlet, the gas passes through the top of the baffle plate, and the gas needs to overflow over the baffle plate and then diffuse from the baffle plate to the central area of the air inlet device body, so that the air inlet rate and the gas distribution amount of the wafer edge area are larger than those of the wafer central area, and the reaction rate of the wafer edge area is larger than those of the wafer central area.
In one embodiment, the baffle does not block the air inlet, comprising: the baffle moves to a position where the bottom of the baffle is higher than the air inlet or the top of the baffle is lower than the air inlet.
In one embodiment, the baffle does not block the air inlet, and further includes: the baffle moves to a position where the bottom of the baffle is located at the top of the air inlet device body or the top of the baffle is located at the bottom of the air inlet device body.
In one embodiment, the device further comprises a control module, wherein the control module controls the up-and-down movement of the baffle. By adopting the control module, the up-and-down movement of the baffle plate can be controlled in real time according to the requirement, so that the real-time switching between the two states that the reaction rate of the central area of the wafer is greater than that of the edge area of the wafer and the reaction rate of the central area of the wafer is less than that of the edge area of the wafer can be realized.
In one embodiment, the air inlet device body is located above the wafer in the chamber, the shape of the top view of the air inlet device body includes a circle, the air inlet device body at least covers the wafer, and the distance between the baffle and the center of the air inlet device body is greater than or equal to the radius of the wafer.
In one embodiment, the height of the baffle is between 1mm and 100mm, and the baffle comprises an annular baffle.
In one embodiment, the air inlets are arranged in a central symmetry manner, and the number of the air inlets is greater than or equal to 3.
In one embodiment, the air inlet direction is directed to the center of the air inlet device body or the angle between the direction directed to the center of the air inlet device body from the air inlet position and the air inlet direction is larger than 0 degrees and smaller than 90 degrees.
In one embodiment, the top of the air inlet device body comprises an upper baffle, the bottom of the air inlet device body comprises a lower filter plate, the lower filter plate at least covers the wafer, the lower filter plate comprises a plurality of first through holes, and the aperture of each first through hole is between 0.1mm and 50mm.
In one embodiment, the top of the air inlet device body comprises a top air inlet, the top of the air inlet device body comprises an upper filter plate, and the upper filter plate comprises a plurality of second through holes.
The invention also provides an air inlet method, which comprises the following steps: the air inlet device is adopted to carry out air inlet operation on the cavity.
According to the air inlet method, when the baffle moves to the position where the air inlet is not blocked, the air can directly impact the central area of the air inlet device body, so that the air inlet rate and the air distribution amount of the central area of the wafer are larger than those of the edge area of the wafer, and the reaction rate of the central area of the wafer is larger than those of the edge area of the wafer; when the baffle moves to shield the air inlet, the air needs to bypass the baffle and then diffuse from the baffle to the central area of the air inlet device body, so that the air inlet rate and the air distribution amount of the wafer edge area are larger than those of the wafer central area, the reaction rate of the wafer edge area is larger than those of the wafer central area, and by adopting the air inlet device, the difference of the air inlet rates of the wafer central area and the wafer edge area and the difference of the air distribution amount of the wafer central area and the wafer edge area can be realized, and the difference of the reaction rates of the wafer central area and the wafer edge area can be realized.
In one embodiment, when the reaction rate of the central area of the wafer is required to be greater than that of the edge area, the baffle plate does not shield the air inlet, and the method comprises the following steps: the baffle moves to the position that the bottom of the baffle is higher than the air inlet, the top of the baffle is lower than the air inlet, the bottom of the baffle is positioned at the top of the air inlet device body or the top of the baffle is positioned at the bottom of the air inlet device body.
In one embodiment, when the reaction rate of the central area of the wafer is required to be smaller than that of the edge area, the baffle plate shields the air inlet, and the method comprises the following steps: the baffle plate moves to the top of the air inlet device body, the bottom of the baffle plate is lower than the air inlet, and the gas passes through the bottom of the baffle plate; or the baffle plate moves to the bottom of the air inlet device body, the top of the baffle plate is higher than the air inlet, and the gas passes through the top of the baffle plate.
Drawings
Fig. 1 is a cross-sectional view of an air intake device of the present invention.
Fig. 2 to 3 are schematic views of the flow direction of the gas when the baffle moves to block the gas inlet.
Fig. 4 to 7 are schematic views of the flow direction of the gas when the baffle moves to a state where the baffle does not block the gas inlet.
Fig. 8 is a cross-sectional view of the air intake device of the present invention along the AA' direction.
In the figure: 10. an air intake device body; 101. an air inlet; 103. a baffle; 106. a lower filter plate; 1061. a first through hole; 107. a filter plate is arranged; 1071. and a second through hole.
Detailed Description
In order that the invention may be readily understood, a more complete description of the invention will be rendered by reference to the appended drawings. Preferred embodiments of the present invention are shown in the drawings. This invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein. These embodiments are provided so that this disclosure will be thorough and complete.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used herein in the description of the invention is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. The term "and/or" as used herein includes any and all combinations of one or more of the associated listed items.
In the description of the present invention, it should be understood that the directions or positional relationships indicated by the terms "upper", "lower", "vertical", "horizontal", "inner", "outer", etc., are based on the methods or positional relationships shown in the drawings, are merely for convenience of describing the present invention and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as limiting the present invention.
In one embodiment, as shown in fig. 1 to 8, an air intake device is provided, including: an air inlet device body 10, wherein a plurality of air inlets 101 are arranged at the side edge of the air inlet device body 10 so as to introduce air into the air inlet device body 10; a baffle plate 103 is arranged at the position opposite to the air inlet 101, the baffle plate 103 can move up and down to switch between two states that the baffle plate 103 shields the air inlet 101 and the baffle plate 103 does not shield the air inlet 101, at least a gas channel for allowing gas to pass through is reserved above or below the baffle plate 103, when the baffle plate 103 moves to the position of shielding the air inlet 101, as shown in fig. 2-3, the baffle plate 103 is positioned on a path for horizontally flowing the gas, and the gas needs to bypass the baffle plate 103 and then is diffused to the central area of the air inlet device body 10 from the baffle plate 103; when the shutter 103 moves to a position where the air inlet 101 is not blocked, as shown in fig. 4 to 7, the air can directly flow into the central region of the air inlet device body 10, and the vertical height of the shutter 103 is greater than the horizontal width.
In this embodiment, when the baffle 103 moves to a position where the gas inlet 101 is not blocked, the gas can directly flow into the central region of the gas inlet device body 10 and then diffuse toward the edge of the gas inlet device body 10, so that the gas inlet rate and the gas distribution amount in the central region of the wafer are greater than those in the edge region of the wafer, and the reaction rate in the central region of the wafer is greater than those in the edge region of the wafer; when the baffle plate 103 moves to the shielding air inlet 101, the air needs to bypass the baffle plate 103 and then diffuse from the baffle plate 103 to the central area of the air inlet device body 10, so that the air inlet rate and the air distribution amount of the wafer edge area are larger than those of the wafer central area, and the reaction rate of the wafer edge area is larger than those of the wafer central area.
In one embodiment, the vertical height of the baffle 103 is greater than the caliber of the air inlet 101.
In one embodiment, the baffle 103 shields the air inlet 101, comprising: as shown in fig. 3, the baffle plate 103 moves to the top of the air inlet device body 10, the bottom of the baffle plate 103 is lower than the air inlet 101, and the gas passes through the bottom of the baffle plate 103; or as shown in fig. 2, the baffle plate 103 is moved to the bottom of the intake device body 10, the top of the baffle plate 103 is higher than the intake port 101, and the gas passes through the top of the baffle plate 103. The baffle plate 103 moves to the top of the air inlet device body 10, the bottom of the baffle plate 103 is lower than the air inlet 101, and through the gas passing through the bottom of the baffle plate 103, the gas diffuses from the edge area of the air inlet device body 10 to the central area of the air inlet device body 10, so that the air inlet rate and the gas distribution amount of the edge area of the wafer are larger than those of the central area of the wafer, and the reaction rate of the edge area of the wafer is larger than those of the central area of the wafer; or the baffle plate 103 is moved to the bottom of the air inlet device body 10, the top of the baffle plate 103 is higher than the air inlet 101, and the gas needs to overflow across the baffle plate 103 and then diffuse from the baffle plate 103 to the central area of the air inlet device body 10 through the gas passing through the top of the baffle plate 103, so that the air inlet rate and the gas distribution amount of the wafer edge area are larger than those of the wafer central area, and the reaction rate of the wafer edge area is larger than that of the wafer central area.
In one embodiment, the baffle 103 does not block the air inlet 101, comprising: the baffle 103 moves to the bottom of the baffle 103 above the air inlet 101 as shown in fig. 4, or the top of the baffle 103 below the air inlet 101 as shown in fig. 5.
In one embodiment, the baffle 103 does not block the air inlet 101, further comprising: the shutter 103 is moved to a position where the bottom of the shutter 103 is located at the top of the intake device body 10 as shown in fig. 7, or a position where the top of the shutter 103 is located at the bottom of the intake device body 10 as shown in fig. 6.
In one embodiment, a control module is also included that controls the up and down movement of the shutter 103. By adopting the control module, the up-and-down movement of the baffle 103 can be controlled in real time according to the requirement, so that the real-time switching between the two states that the reaction rate of the central area of the wafer is greater than that of the edge area of the wafer and the reaction rate of the central area of the wafer is less than that of the edge area of the wafer can be realized.
In one embodiment, the air inlet 101 is located at a medial side.
In one embodiment, the gas inlet apparatus body 10 is located above a wafer within a chamber. The chamber comprises a reaction chamber.
In one embodiment, the shape of the top view of the air intake body 10 includes a circle, and the air intake body 10 covers at least the wafer.
In one embodiment, the baffle 103 is spaced from the center of the intake body 10 by a distance equal to or greater than the radius of the wafer.
In one embodiment, the height of the baffle 103 is between 1mm and 100mm, for example, the height of the baffle 103 may be 1mm, 10mm, 30mm, 50mm, 80mm, 100mm. When the baffle 103 moves downward, the distance between the top of the baffle 103 and the top of the air intake device body 10 is 1mm to 100mm, for example, the distance between the top of the baffle 103 and the top of the air intake device body 10 may be 1mm, 10mm, 30mm, 50mm, 80mm, 100mm.
In one embodiment, the diameter of the air inlet 101 is between 0.1mm and 10mm, for example, the diameter of the air inlet 101 may be 0.1mm, 1mm, 2mm, 4mm, 5mm, 8mm, 10mm.
In one embodiment, the air inlets 101 are arranged in a central symmetry manner, the number of the air inlets 101 is greater than or equal to 3, and the number of the air inlets 101 is between 4 and 16, for example, the number of the air inlets 101 may be 4, 6, 8, 10, 12, or 16.
In one embodiment, the baffle 103 comprises an annular baffle 103, as shown in fig. 8.
In one embodiment, the air inlet 101 is directed toward the center of the air intake device body 10.
In one embodiment, the angle between the direction from the position of the air inlet 101 toward the center of the air intake device body 10 and the direction of the air inlet 101 is greater than 0 degrees and less than 90 degrees, for example, the angle between the direction from the position of the air inlet 101 toward the center of the air intake device body 10 and the direction of the air inlet 101 may be 10 degrees, 15 degrees, 30 degrees, 45 degrees, 60 degrees, 80 degrees.
In one embodiment, the top of the intake device body 10 includes an upper baffle.
In one embodiment, the upper baffle comprises a closure baffle.
In one embodiment, the bottom of the intake body 10 includes a lower filter plate 106. The shape of the lower filter plate 106 may be circular. The lower filter plate 106 may be made of aluminum, ceramic or quartz. In one embodiment, the baffle 103 is located outside the lower filter plate 106.
In one embodiment, the thickness of the upper and lower filter plates 106 is greater than the height of the baffle 103, such that the baffle 103 does not pass out of the upper or lower filter plates 106 when the baffle 103 is moved so as not to obscure the air inlet 101.
In one embodiment, the lower filter plate 106 covers at least the wafer.
In one embodiment, the lower filter plate 106 includes a number of first through holes 1061. The plurality of first through holes 1061 may or may not be uniformly distributed. The first through holes 1061 are centrally symmetrical. The shape of the first through hole 1061 includes a circle, a rectangle, a triangle, a bar, etc., and may be any other geometric shape.
In one embodiment, the aperture of the first through hole 1061 is between 0.1mm and 50mm, for example, the aperture of the first through hole 1061 may be 0.1mm, 0.2mm, 0.3mm, 0.4mm, 0.5mm, 1mm, 5mm, 10mm, 20mm, 30mm, 40mm, 50mm.
In one embodiment, the upper side of the intake device body 10 includes a top intake port. The reaction rate of the wafer center region and the wafer edge region can be further adjusted by matching with the top air inlet. The gas distribution in the center region and the edge region of the wafer can be adjusted by adjusting the ratio of the top gas inlet to the gas inlet 101.
In one embodiment, the top of the intake device body 10 includes an upper filter plate 107. The shape of the upper filter plate 107 may be circular.
In one embodiment, the thickness of the upper filter plate 107 is greater than the height of the baffle 103 such that the baffle 103 does not pass out of the upper filter plate 107 when the baffle 103 is moved to not block the air inlet 101.
In one embodiment, the shape of the first through hole 1061 includes a taper or a truncated cone shape, and the shape of the second through hole 1071 includes a taper or a truncated cone shape.
In one embodiment, the lower end hole diameter of the first through hole 1061 is larger than the upper end hole diameter, and the lower end hole diameter of the second through hole 1071 is larger than the upper end hole diameter, which is advantageous for more uniform gas dispersion.
In one embodiment, the upper filter plate 107 includes a number of second through holes 1071. The plurality of second through holes 1071 may be uniformly distributed or unevenly distributed. The second through holes 1071 are centrally symmetrical. The shape of the second through hole 1071 includes a circle, a rectangle, a triangle, a bar, etc., and may be any geometric figure. In one embodiment, the aperture of the second through hole 1071 is between 0.1mm and 50mm, for example, the aperture of the second through hole 1071 may be 0.1mm, 0.2mm, 0.3mm, 0.4mm, 0.5mm, 1mm, 5mm, 10mm, 20mm, 30mm, 40mm, 50mm.
In one embodiment, an air intake method is provided, comprising: the air inlet device is adopted to carry out air inlet operation on the cavity.
In this embodiment, in the above air intake method, when the baffle 103 moves to a position where the air inlet 101 is not blocked, the air can directly flow into the central area of the air intake device body 10, so that the air intake rate and the air distribution amount in the central area of the wafer are greater than those in the edge area of the wafer, and the reaction rate in the central area of the wafer is greater than those in the edge area of the wafer; when the baffle plate 103 moves to the shielding air inlet 101, the air needs to bypass the baffle plate 103 and then diffuse from the baffle plate 103 to the central area of the air inlet device body 10, so that the air inlet rate and the air distribution amount of the wafer edge area are larger than those of the wafer central area, and the reaction rate of the wafer edge area is larger than those of the wafer central area.
In one embodiment, when it is desired that the wafer center zone reaction rate is greater than the edge zone reaction rate, the baffle 103 does not block the air inlet 101, including: the baffle 103 moves to a position where the bottom of the baffle 103 is higher than the intake port 101, the top of the baffle 103 is lower than the intake port 101, the bottom of the baffle 103 is located at the top of the intake device body 10, or the top of the baffle 103 is located at the bottom of the intake device body 10.
In one embodiment, when it is desired that the wafer center zone reaction rate be less than the edge zone reaction rate, the baffle 103 shields the air inlet 101, including: the baffle plate 103 moves to the top of the air inlet device body 10, the bottom of the baffle plate 103 is lower than the air inlet 101, and the gas passes through the bottom of the baffle plate 103; or the baffle plate 103 is moved to the bottom of the intake device body 10, the top of the baffle plate 103 is higher than the intake port 101, and the gas passes through the top of the baffle plate 103.
The air inlet device and the air inlet method can be applied to semiconductor equipment of processes such as plasma etching, semiconductor film deposition, plasma photoresist removal and the like.
Plasma etching: in a typical plasma etch process, different combinations of process gases (e.g., cxFy, O 2 Ar, etc.) are subjected to Radio frequency excitation in a Radio frequency (Radio frequency) environment to form a plasma. The formed plasma is subjected to physical bombardment and chemical reaction with the surface of the wafer under the action of the electric fields of the upper electrode and the lower electrode of the etching cavity, so that the processing procedures of designing patterns and key processes on the surface of the wafer are completed. Typical etch chambers include both capacitively Coupled Chambers (CCP) and inductively coupled chambers (ICP).
Depositing a semiconductor film: thin film deposition is an indispensable link in the integrated circuit manufacturing process, and the conventional thin film deposition process mainly includes vapor deposition processes such as PVD (physical vapor deposition) and CVD. CVD (chemical vapor deposition): mainly uses one or several gas phase compounds or simple substances containing film elements to make chemical reaction on the surface of substrate so as to produce film. The CVD method can produce thin film materials including metals other than alkali and alkaline earth metals (Ag, au), carbides, nitrides, borides, oxides, sulfides, selenides, tellurides, metal compounds, alloys, and the like.
Plasma photoresist removal: a plasma stripper is an apparatus for removing surface materials using a plasma technique. Photoresist stripping is a surface treatment technique used to remove residual photoresist on the wafer surface and provide a clean wafer surface for subsequent processing. The principle of the plasma photoresist remover is that plasma is generated by discharge and is introduced into a photoresist removing area, organic matters on the surface of the material react with activated plasma to be oxidized and decomposed into gas, so that the purpose of removing photoresist on the surface of a wafer is achievedFor example, in the reaction chamber of the plasma photoresist stripper, O may be introduced through the air inlet 101 by the air inlet device 2 、N 2 Or N 2 、H 2 When the gas distribution of the edge area of the central area of the wafer is regulated, the top gas inlet can also be introduced with He and N 2 、O 2 、H 2 And the gases are combined to adjust the gas distribution quantity of the edge area of the central area of the wafer, so that the photoresist removing rate of the central area and the edge area of the wafer is adjusted.
The technical features of the above embodiments may be arbitrarily combined, and all possible combinations of the technical features in the above embodiments are not described for brevity of description, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the description.
The foregoing examples illustrate only a few embodiments of the invention, which are described in detail and are not to be construed as limiting the scope of the invention. It should be noted that it will be apparent to those skilled in the art that several variations and modifications can be made without departing from the spirit of the invention, which are all within the scope of the invention. Accordingly, the scope of protection of the present invention is to be determined by the appended claims.
Claims (14)
1. An air intake device, characterized by comprising:
the air inlet device comprises an air inlet device body, wherein a plurality of air inlets are formed in the side edge of the air inlet device body so as to introduce air into the air inlet device body; a baffle is arranged at the position opposite to the air inlet, the baffle can move up and down so as to switch between two states that the baffle shields the air inlet and the baffle does not shield the air inlet, at least a gas channel for allowing the gas to pass through is reserved above or below the baffle, when the baffle moves to the position of shielding the air inlet, the baffle is positioned on a path for horizontally flowing the gas, and the gas needs to bypass the baffle and then is diffused to the central area of the air inlet device body from the baffle; when the baffle moves to a position where the air inlet is not blocked, the air can directly impact the central area of the air inlet device body, and the vertical height of the baffle is larger than the horizontal width.
2. The air intake apparatus of claim 1, wherein the baffle shields the air inlet, comprising: the baffle plate moves to the top of the air inlet device body, the bottom of the baffle plate is lower than the air inlet, and the gas passes through the bottom of the baffle plate; or the baffle plate moves to the bottom of the air inlet device body, the top of the baffle plate is higher than the air inlet, and the gas passes through the top of the baffle plate.
3. The air intake apparatus of claim 1, wherein the baffle does not block the air intake, comprising: the baffle moves to a position where the bottom of the baffle is higher than the air inlet or the top of the baffle is lower than the air inlet.
4. The air intake apparatus of claim 3, wherein the baffle does not block the air intake, further comprising: the baffle moves to a position where the bottom of the baffle is located at the top of the air inlet device body or the top of the baffle is located at the bottom of the air inlet device body.
5. The air intake apparatus of claim 1, further comprising a control module that controls up and down movement of the baffle.
6. The gas inlet device of claim 1, wherein the gas inlet device body is located above a wafer in the chamber, the top view of the gas inlet device body comprises a circular shape, the gas inlet device body covers at least the wafer, and the baffle is located at a distance from a center of the gas inlet device body that is equal to or greater than a radius of the wafer.
7. The air intake device of claim 1, wherein the baffle has a height of between 1mm and 100mm, and the baffle comprises an annular baffle.
8. The air inlet device according to claim 1, wherein the air inlets are arranged in a central symmetry manner, and the number of the air inlets is 3 or more.
9. The air intake device of claim 1, wherein an angle between a direction of the air intake port directed toward the center of the air intake device body or from the air intake port position toward the center of the air intake device body and the air intake port direction is greater than 0 degrees and less than 90 degrees.
10. The air inlet device according to claim 1, wherein the top of the air inlet device body comprises an upper baffle plate, the bottom of the air inlet device body comprises a lower filter plate, the lower filter plate at least covers a wafer, the lower filter plate comprises a plurality of first through holes, and the aperture of the first through holes is between 0.1mm and 50mm.
11. The air intake device of claim 1, wherein the air intake device body includes a top air intake above, the top of the air intake device body includes an upper filter plate, and the upper filter plate includes a plurality of second through holes.
12. An air intake method, characterized in that an air intake operation is performed on a chamber by using the air intake device according to any one of claims 1 to 11.
13. The method of claim 12, wherein the baffle does not block the gas inlet when a greater rate of reaction in the center region than in the edge region of the wafer is desired, comprising: the baffle moves to the position that the bottom of the baffle is higher than the air inlet, the top of the baffle is lower than the air inlet, the bottom of the baffle is positioned at the top of the air inlet device body or the top of the baffle is positioned at the bottom of the air inlet device body.
14. The method of claim 12, wherein the baffle blocks the gas inlet when a wafer center reaction rate is desired to be less than an edge reaction rate, comprising: the baffle plate moves to the top of the air inlet device body, the bottom of the baffle plate is lower than the air inlet, and the gas passes through the bottom of the baffle plate; or the baffle plate moves to the bottom of the air inlet device body, the top of the baffle plate is higher than the air inlet, and the gas passes through the top of the baffle plate.
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| CN117116816B (en) | 2024-01-23 |
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